CN106848010A - InGaN基黄色发光二极管结构 - Google Patents
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- 238000002360 preparation method Methods 0.000 claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000010276 construction Methods 0.000 claims abstract description 8
- 229910002601 GaN Inorganic materials 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 10
- 230000000737 periodic effect Effects 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 238000009826 distribution Methods 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 1
- 238000002347 injection Methods 0.000 abstract description 2
- 239000007924 injection Substances 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 5
- 238000005286 illumination Methods 0.000 description 4
- 238000003475 lamination Methods 0.000 description 3
- 238000009877 rendering Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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Abstract
本发明公开了一种InGaN基黄色发光二极管结构，它包括衬底，在衬底上由下至上依次生长有缓冲层、n型层、准备层、黄光多量子阱层和p型层，特征是：准备层和黄光多量子阱层位置包含有倒六角锥结构，准备层是InxGa(1‑x)N/InyGa(1‑y)N叠层结构，x＞y，InxGa(1‑x)N层厚度是InyGa(1‑y)N层厚度的2‑5倍。平均In组分较高的InxGa(1‑x)N/InyGa(1‑y)N叠层结构准备层可显著弛豫了黄光多量子阱层所受的张应力，获得高质量的黄光多量子阱发光层，同时位于准备层及黄光多量子阱层区域的倒六角锥结构可大幅提升p型载流子(空穴)的注入效率，从而提升黄光发光二极管的发光效率。
Description
技术领域
本发明涉及半导体照明技术领域，尤其是涉及一种InGaN基黄色发光二极管结构。
背景技术
发光二极管(LED)以其节能环保、可靠性高等显著特点得到人们广泛的关注和研究。在能源危机和环境危机日益加重的今天，众多国家和地区将LED照明技术列为国家发展战略。经过二十多年的研究和努力，LED外延生长技术、LED芯片制造技术以及LED封装技术均得到长足进步，使得LED被广泛用于显示屏、指示灯、景观照明、汽车灯、通用照明等很多领域。
目前，照明用白光LED通常采用“蓝光LED+荧光粉”的方式制成，这种形式的白光LED存在以下缺点：1、显色指数、色温和发光效率之间难以协调；2、荧光粉有限的转换效率损失了部分LED的发光效率。为此，人们提出了采用多色LED合成白光的技术方案，如将“红+黄+绿+青+蓝”五基色LED芯片封装在一起制成白光LED。这种白光LED将可望获得低色温、高显色指数、高光效的白光光源。然而，目前蓝光、红光以及青光都具有较高的电光转换效率，而绿光和黄光的电光转换效率不高，尤其是黄光。因此，用现有的五基色LED合成白光可以获得高显色指数、低色温的白光，但光效不高。InGaN和AlGaInP材料体系均可以获得黄光LED，AlGaInP材料体系随着波长从红光转变为黄光，能带由直接带隙转变为间接带隙，从物理上存在提升黄光光效的瓶颈。而InGaN材料体系则没有物理瓶颈。
发明内容
本发明的目的在于提供一种可使黄光多量子阱层所受的张应力得到显著弛豫、从而提升黄光内量子效率、获得高光效的InGaN基黄色发光二极管结构。
本发明的目的是这样实现的：
一种InGaN基黄色发光二极管结构，包括衬底，在衬底上设有缓冲层，在缓冲层上依次设有n型层、准备层、黄光多量子阱层和p型层，特征是：在准备层401和黄光多量子阱层501中设有向上开口的倒六角锥空洞结构701；准备层为InxGa(1-x)N/InyGa(1-y)N叠层结构，其中0.03≤x≤0.15，0≤y≤0.05，且x＞y；准备层的叠层周期数为k，InxGa(1-x)N层的厚度为hx，InyGa(1-y)N层的厚度为hy，其中10≤k≤100，1.5nm≤hx≤20nm，0.5nm≤hy≤4nm，且InxGa(1-x)N层的厚度hx与InyGa(1-y)N层的厚度hy的比值范围为2-5，由于InxGa(1-x)N/InyGa(1-y)N叠层结构中的In组分较高，可显著弛豫黄光量子阱中的应力；黄光多量子阱层为InzGa(1-z)N/InwGa(1-w)N周期结构，其中0.2≤z≤0.4，0≤w≤0.15；黄光多量子阱层的周期数为m，InzGa(1-z)N层的厚度为hz，InwGa(1-w)N层的厚度为hw，其中3≤m ≤10，2nm≤hz≤3nm，7nm≤hw≤20nm。
位于准备层和黄光多量子阱层位置的倒六角锥结构701在生长平面上分布密度为ρ，生长至黄光多量子阱层顶时，六角锥结构与生长平面相交成正六边形的结构，正六边形边长为L，其中1×108cm-2≤ρ≤1×1010cm-2，50nm≤L≤200nm。生长平面为GaN材料体系的(0001)面，倒六角锥结构的六个锥面为GaN材料体系{10-11}面族的六个面。至黄光多量子阱层生长结束时，倒六角锥结构表现为倒六角锥形的空洞(如图2所示)，在生长P型层的过程中上述空洞被填平。
衬底为硅衬底(Si)、蓝宝石衬底(Al2O3)、碳化硅衬底(SiC)或氮化镓衬底(GaN)等单晶材料中的一种。
本发明的特点为：在生长黄光多量子阱层之前，先生长一层平均In组分较高的InxGa(1-x)N/InyGa(1-y)N叠层结构准备层，从而显著弛豫了黄光多量子阱层所受的张应力，获得高质量的黄光多量子阱发光层；同时在准备层以及黄光多量子阱层区域引入具有一定密度和大小的倒六角锥结构，可大幅提升p型载流子(空穴)的注入效率，进一步提升黄光发光二极管的内量子效率。
附图说明
图1为本发明InGaN基黄光发光二极管的剖面图；
图2为本发明InGaN基黄色发光二极管结构生长至黄光多量子阱层结束时的立体结构示意图；
图3为本发明InGaN基黄色发光二极管结构生长至黄光多量子阱层结束时的俯视图；
图4为本发明InGaN基黄色发光二极管结构生长至黄光多量子阱层结束时的剖面图；
其中：101-衬底，201-缓冲层，301-n型层，401-准备层，501-黄光多量子阱层，601-p型层，701-倒六角锥结构。
具体实施方式
下面结合实施例并对照附图1对本发明作进一步的详细说明。
实施例1：
如图1所示，衬底101采用硅(Si)衬底，缓冲层201为AlN，n型层为掺Si浓度2×1018-5×1018cm-3的GaN；准备层401为In0.1Ga0.9N/GaN叠层结构，叠层周期为20，In0.1Ga0.9N层厚5nm，GaN层厚1nm；黄光多量子阱层501为5个周期的In0.28Ga0.72N/GaN周期结构，其中In0.28Ga0.72N阱厚2.7nm，GaN垒厚13nm；p型层601为掺Mg浓度1×1020cm-3的GaN。
如图2，3，4所示，倒六角锥结构701的密度为5×108cm-2-1×109cm-2，至黄光多量子阱层501顶时倒六角锥结构701与生长平面相交成正六边形，正六边形边长为100-150nm。
实施例2：
如图1所示，衬底101采用蓝宝石(Al2O3)衬底，缓冲层201为低温GaN，n型层为掺Si浓度5×1018-1×1019cm-3的GaN；准备层401为In0.05Ga0.95N/In0.02Ga0.98N叠层结构，叠层周期为30，In0.05Ga0.95N层厚60nm，In0.02Ga0.98N层厚15nm；黄光多量子阱层501为10个周期的In0.3Ga0.7N/GaN周期结构，其中In0.3Ga0.7N阱厚2.5nm，GaN垒厚15nm；p型层601为掺Mg浓度5×1019cm-3的GaN。
如图2，3，4所示，倒六角锥结构701的密度为2×108cm-2-5×108cm-2，至黄光多量子阱层501顶时倒六角锥结构701与生长平面相交成正六边形，正六边形边长为150-200nm。
Claims (4)
1.InGaN基黄色发光二极管结构，包括衬底，在衬底上由下至上依次生长有缓冲层、n型层、准备层、黄光多量子阱层和p型层，其特征在于：所述准备层和黄光多量子阱层位置包含有倒六角锥结构；所述准备层是InxGa(1-x)N/InyGa(1-y)N叠层结构，其中0.03≤x≤0.15，0≤y≤0.05，且x＞y；所述准备层叠层周期数为k，InxGa(1-x)N层的厚度为hx，InyGa(1-y)N层的厚度为hy，其中10≤k≤100，1.5nm≤hx≤20nm，0.5nm≤hy≤4nm，且hx与hy的比值范围为2--5；所述黄光多量子阱层为InzGa(1-z)N/InwGa(1-w)N周期结构，其中0.2≤z≤0.4，0≤w≤0.15；所述黄光多量子阱层周期数为m，InzGa(1-z)N层的厚度为hz，InwGa(1-w)N层的厚度为hw，其中3≤m≤10，2nm≤hz≤3nm，7nm≤hw≤20nm。
2.根据权利要求1所述的InGaN基黄色发光二极管结构，其特征在于：所述位于准备层和黄光多量子阱层位置的倒六角锥结构在生长平面上分布密度为ρ，至黄光多量子阱层顶时倒六角锥结构与生长平面相交成正六边形，正六边形边长为L，其中1×108cm-2≤ρ≤1×1010cm-2，50nm≤L≤200nm。
3.根据权利要求1、2所述的InGaN基黄色发光二极管结构，其特征在于：生长平面为GaN材料体系的(0001)面，倒六角锥结构的六个锥面为GaN材料体系{10-11}面族的六个面；至黄光多量子阱层生长结束时，倒六角锥结构表现为倒六角锥形的空洞，在生长p型层的过程中上述空洞被填平。
4.根据权利要求1所述的InGaN基黄色发光二极管结构，其特征在于：所述衬底为硅衬底、蓝宝石衬底、碳化硅衬底或氮化镓衬底中的一种。
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| CN108305920A (zh) * | 2018-03-09 | 2018-07-20 | 南昌大学 | 一种氮化物发光二极管 |
| CN112242465A (zh) * | 2020-09-08 | 2021-01-19 | 南昌大学 | 一种具有增强出光p型层的氮化物半导体发光二极管 |
| CN112838151A (zh) * | 2021-01-22 | 2021-05-25 | 清华大学 | GaN基微型三色LED阵列及其制作方法、微型显示系统 |
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| CN112838151A (zh) * | 2021-01-22 | 2021-05-25 | 清华大学 | GaN基微型三色LED阵列及其制作方法、微型显示系统 |
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