CN106847957A - A kind of ultra-thin photoelectric conversion film of high conversion efficiency - Google Patents
A kind of ultra-thin photoelectric conversion film of high conversion efficiency Download PDFInfo
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- CN106847957A CN106847957A CN201611250468.1A CN201611250468A CN106847957A CN 106847957 A CN106847957 A CN 106847957A CN 201611250468 A CN201611250468 A CN 201611250468A CN 106847957 A CN106847957 A CN 106847957A
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- 238000006243 chemical reaction Methods 0.000 title claims abstract description 59
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 28
- 239000005083 Zinc sulfide Substances 0.000 claims abstract description 14
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000002245 particle Substances 0.000 claims abstract description 12
- 239000004408 titanium dioxide Substances 0.000 claims abstract description 12
- 239000010408 film Substances 0.000 claims description 37
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 27
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 claims description 26
- 239000002243 precursor Substances 0.000 claims description 20
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 18
- 239000010409 thin film Substances 0.000 claims description 15
- 239000011259 mixed solution Substances 0.000 claims description 12
- 239000000243 solution Substances 0.000 claims description 12
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 9
- 235000019441 ethanol Nutrition 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 6
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 claims description 5
- 238000001035 drying Methods 0.000 claims description 5
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 claims description 5
- 238000002360 preparation method Methods 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 5
- 239000002994 raw material Substances 0.000 claims description 5
- 238000001291 vacuum drying Methods 0.000 claims description 5
- 239000003112 inhibitor Substances 0.000 claims description 4
- 239000002904 solvent Substances 0.000 claims description 4
- 238000003756 stirring Methods 0.000 claims description 4
- 150000003751 zinc Chemical class 0.000 claims description 4
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 claims description 4
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 claims description 3
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 claims description 3
- 239000004246 zinc acetate Substances 0.000 claims description 3
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 claims description 3
- 229910000368 zinc sulfate Inorganic materials 0.000 claims description 3
- 229960001763 zinc sulfate Drugs 0.000 claims description 3
- FPCJKVGGYOAWIZ-UHFFFAOYSA-N butan-1-ol;titanium Chemical compound [Ti].CCCCO.CCCCO.CCCCO.CCCCO FPCJKVGGYOAWIZ-UHFFFAOYSA-N 0.000 claims description 2
- DCKVFVYPWDKYDN-UHFFFAOYSA-L oxygen(2-);titanium(4+);sulfate Chemical compound [O-2].[Ti+4].[O-]S([O-])(=O)=O DCKVFVYPWDKYDN-UHFFFAOYSA-L 0.000 claims description 2
- 229910000348 titanium sulfate Inorganic materials 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 238000005660 chlorination reaction Methods 0.000 claims 1
- 150000003609 titanium compounds Chemical class 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 8
- 229910052984 zinc sulfide Inorganic materials 0.000 description 8
- 230000008569 process Effects 0.000 description 4
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 231100000252 nontoxic Toxicity 0.000 description 3
- 230000003000 nontoxic effect Effects 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000005622 photoelectricity Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011592 zinc chloride Substances 0.000 description 2
- 235000005074 zinc chloride Nutrition 0.000 description 2
- 238000013019 agitation Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WGPCGCOKHWGKJJ-UHFFFAOYSA-N sulfanylidenezinc Chemical compound [Zn]=S WGPCGCOKHWGKJJ-UHFFFAOYSA-N 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- HDUMBHAAKGUHAR-UHFFFAOYSA-J titanium(4+);disulfate Chemical class [Ti+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O HDUMBHAAKGUHAR-UHFFFAOYSA-J 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02425—Conductive materials, e.g. metallic silicides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02557—Sulfides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02565—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
Abstract
The present invention provides a kind of ultra-thin photoelectric conversion film of high conversion efficiency, it is related to field of photoelectric technology, the ultra-thin photoelectric conversion film of the high conversion efficiency, it is composited by titanium dioxide and zinc sulphide, the particle diameter of the titanium dioxide is 25~50nm, the particle diameter of zinc sulphide is 20~50nm, the photoelectric conversion of laminated film of the invention is substantially better than the photoelectric conversion of single film, and the present invention does not need high temperature high vacuum condition, it is low to instrument and equipment requirement, low production cost, production efficiency is high, it is easy to operate.
Description
Technical field
The present invention relates to field of photoelectric technology, and in particular to a kind of ultra-thin photoelectric conversion film of high conversion efficiency.
Background technology
As society and expanding economy, China's total energy consumption increase severely, energy crisis and traditional energy are made to environment
Into dirt be on the rise, therefore develop the clean environment firendly energy and turn into the key subjects of facing mankind.In order to more fully sharp
With this cleaning of solar energy, safe and environmentally friendly renewable resource, the research and development of solar cell material in recent years is increasingly
It is taken seriously.
In film photovoltaic material, TiO2Semiconductor is especially prominent, on the one hand, TiO2Abundance, yield is big, and TiO2
Nontoxic, stable chemical nature can be used for photocatalytic water and light degradation organic matter, and can be used as optoelectronic pole material as photochemical catalyst
In opto-electronic conversion.On the other hand, ZnS is II-VI group compound semiconductor, with zinc blende crystal structure, direct transition type energy
Band structure, ZnS has the advantages that forbidden band is (3.5~3.7eV) wide, and it does not absorb substantially to sunshine, can so make more
High-energy photons are sent on electrode, improve cell photoelectric conversion efficiency.Additionally, ZnS is not only nontoxic to human body, and
ZnS films play structure buffering between Window layer and absorbed layer, reduce lattice fit, moreover it is possible to combined with absorbed layer
Good, battery conversion efficiency is high, it is all too can be in battery buffer layer material, nontoxic ZnS is the preferable replacement of poisonous CdS
Person.
Therefore, TiO is prepared2/ ZnS films will play positive impetus to the development and application of solar-electricity device.
The content of the invention
In view of the shortcomings of the prior art, the invention provides the ultra-thin photoelectric conversion film of high conversion efficiency, the laminated film
Not only with low cost, process is simple, and photoelectric conversion is better than the photoelectric conversion of single film.
To realize object above, the present invention is achieved by the following technical programs：
A kind of ultra-thin photoelectric conversion film of high conversion efficiency, is composited by titanium dioxide and zinc sulphide, the titanium dioxide
The particle diameter of titanium is 25~50nm, and the particle diameter of zinc sulphide is 20~50nm.
Preferably, the preparation method of the ultra-thin photoelectric conversion film of the high conversion efficiency, comprises the following steps：
(1) first electro-conductive glass substrate is cleaned, is then cleaned by ultrasonic in acetone and absolute ethyl alcohol respectively, sprayed with alcohol
And dry, nonconductive surface closed protective is got up, it is standby；
(2) by 1~2mmol parts of zinc salt, 1~2mmol CH4N2S is put into 30 parts of solvent, makes the material in solution uniform
Mixing, obtains mixed solution A；
(3) it is raw material to use titanium-containing compound, is dissolved in mixed solution A, adds acetylacetone,2,4-pentanedione as inhibitor, Ran Hou
Under strong agitation, the mixed liquor of hydrochloric acid absolute ethyl alcohol is instilled in solution, 90 DEG C of heated at constant temperature 2~8 hours obtain mixed system
B；
(4) by mixed system B uniform applications on electro-conductive glass substrate, drying obtains precursor thin-film sample；
(5) precursor thin-film sample is placed on support, be placed with hydrazine hydrate can closed container, make precursor thin-film
Sample is not contacted with hydrazine, and the closed container that will be equipped with precursor film sample is put into baking oven, be heated to 120~180 DEG C it
Between, 8~24h of soaking time hours, room temperature taking-up being then cooled to, vacuum drying, the ultra-thin photoelectricity for obtaining high conversion efficiency turns
Change film.
Preferably, the zinc salt is the one kind in zinc chloride, zinc sulfate, zinc nitrate, zinc acetate.
Preferably, the solvent be, at least one in ethanol, ethylene glycol, hydrochloric acid.
Preferably, the titanium-containing compound is the one kind in butyl titanate, titanium tetrachloride, titanium sulfate.
Preferably, the acetylacetone,2,4-pentanedione is with the mol ratio of titanium-containing compound：0.1~1.5：1.
Beneficial effect of the present invention：The present invention is by preparing laminated film so that the photoelectric conversion of film improves
8.6%, photoelectric conversion is substantially better than the photoelectric conversion of single film；It is right and the present invention does not need high temperature high vacuum condition
Instrument and equipment requirement is low, and low production cost, production efficiency is high, it is easy to operate.Gained zinc sulfide optoelectronic film has preferably continuous
Property and uniformity, this new technology is easily controlled the composition and structure of target product, thin to prepare high performance zinc sulphide photoelectricity
A kind of method that film provides low cost, is capable of achieving large-scale industrial production.
Specific embodiment
To make the purpose, technical scheme and advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention,
Technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is the present invention one
Divide embodiment, rather than whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art are not making
The every other embodiment obtained under the premise of creative work, belongs to the scope of protection of the invention.
Embodiment 1：
A kind of ultra-thin photoelectric conversion film of high conversion efficiency, is composited by titanium dioxide and zinc sulphide, the titanium dioxide
The particle diameter of titanium is 25nm, and the particle diameter of zinc sulphide is 20nm.
Preferably, the preparation method of the ultra-thin photoelectric conversion film of the high conversion efficiency, comprises the following steps：
(1) first electro-conductive glass substrate is cleaned, is then cleaned by ultrasonic in acetone and absolute ethyl alcohol respectively, sprayed with alcohol
And dry, nonconductive surface closed protective is got up, it is standby；
(2) by 2mmol parts of zinc chloride, 2mmol CH4N2S is put into the mixed solution of 30 parts of ethanol and hydrochloric acid, makes solution
In material uniformly mix, obtain mixed solution A；
(3) it is raw material to use 1.5mmol butyl titanates, is dissolved in mixed solution A, adds 0.15mmol acetylacetone,2,4-pentanedione conducts
Inhibitor, then under vigorous stirring, instills the mixed liquor of hydrochloric acid absolute ethyl alcohol in solution, 90 DEG C of heated at constant temperature 4 hours, obtains
To mixed system B；
(4) by mixed system B uniform applications on electro-conductive glass substrate, drying obtains precursor thin-film sample；
(5) precursor thin-film sample is placed on support, be placed with hydrazine hydrate can closed container, make precursor thin-film
Sample is not contacted with hydrazine, and the closed container that will be equipped with precursor film sample is put into baking oven, is heated between 160 DEG C, is protected
Warm time 12h hours, room temperature taking-up is then cooled to, vacuum drying obtains the ultra-thin photoelectric conversion film of high conversion efficiency.
Embodiment 2：
A kind of ultra-thin photoelectric conversion film of high conversion efficiency, is composited by titanium dioxide and zinc sulphide, the titanium dioxide
The particle diameter of titanium is 50nm, and the particle diameter of zinc sulphide is 40nm.
Preferably, the preparation method of the ultra-thin photoelectric conversion film of the high conversion efficiency, comprises the following steps：
(1) first electro-conductive glass substrate is cleaned, is then cleaned by ultrasonic in acetone and absolute ethyl alcohol respectively, sprayed with alcohol
And dry, nonconductive surface closed protective is got up, it is standby；
(2) by 1mmol parts of zinc acetate, 1mmol CH4N2S is put into the mixed solution of 30 parts of ethylene glycol and hydrochloric acid, makes solution
In material uniformly mix, obtain mixed solution A；
(3) it is raw material to use 1.5mmol titanium tetrachlorides, is dissolved in mixed solution A, adds 0.1mmol acetylacetone,2,4-pentanedione conducts
Inhibitor, then under vigorous stirring, instills the mixed liquor of hydrochloric acid absolute ethyl alcohol in solution, 90 DEG C of heated at constant temperature 2 hours, obtains
To mixed system B；
(4) by mixed system B uniform applications on electro-conductive glass substrate, drying obtains precursor thin-film sample；
(5) precursor thin-film sample is placed on support, be placed with hydrazine hydrate can closed container, make precursor thin-film
Sample is not contacted with hydrazine, and the closed container that will be equipped with precursor film sample is put into baking oven, is heated between 120 DEG C, is protected
Warm time 24h hours, room temperature taking-up is then cooled to, vacuum drying obtains the ultra-thin photoelectric conversion film of high conversion efficiency.
Embodiment 3：
A kind of ultra-thin photoelectric conversion film of high conversion efficiency, is composited by titanium dioxide and zinc sulphide, the titanium dioxide
The particle diameter of titanium is 30nm, and the particle diameter of zinc sulphide is 30nm.
Preferably, the preparation method of the ultra-thin photoelectric conversion film of the high conversion efficiency, comprises the following steps：
(1) first electro-conductive glass substrate is cleaned, is then cleaned by ultrasonic in acetone and absolute ethyl alcohol respectively, sprayed with alcohol
And dry, nonconductive surface closed protective is got up, it is standby；
(2) by 1.5mmol parts of zinc sulfate, 1mmol CH4N2S is put into 30 parts of ethanol, the material in solution is uniformly mixed
Close, obtain mixed solution A；
(3) it is raw material to use 15mL titanium sulfates, is dissolved in mixed solution A, adds 0.12mmol acetylacetone,2,4-pentanediones as suppression
Agent, then under vigorous stirring, instills the mixed liquor of hydrochloric acid absolute ethyl alcohol in solution, 90 DEG C of heated at constant temperature 8 hours, is mixed
Zoarium system B；
(4) by mixed system B uniform applications on electro-conductive glass substrate, drying obtains precursor thin-film sample；
(5) precursor thin-film sample is placed on support, be placed with hydrazine hydrate can closed container, make precursor thin-film
Sample is not contacted with hydrazine, and the closed container that will be equipped with precursor film sample is put into baking oven, is heated between 180 DEG C, is protected
Warm time 8h hours, room temperature taking-up is then cooled to, vacuum drying obtains the ultra-thin photoelectric conversion film of high conversion efficiency.
It should be noted that herein, such as first and second or the like relational terms are used merely to a reality
Body or operation make a distinction with another entity or operation, and not necessarily require or imply these entities or deposited between operating
In any this actual relation or order.And, term " including ", "comprising" or its any other variant be intended to
Nonexcludability is included, so that process, method, article or equipment including a series of key elements not only will including those
Element, but also other key elements including being not expressly set out, or also include being this process, method, article or equipment
Intrinsic key element.In the absence of more restrictions, the key element limited by sentence "including a ...", it is not excluded that
Also there is other identical element in process, method, article or equipment including the key element.
The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although with reference to the foregoing embodiments
The present invention has been described in detail, it will be understood by those within the art that：It still can be to foregoing each implementation
Technical scheme described in example is modified, or carries out equivalent to which part technical characteristic；And these modification or
Replace, do not make the spirit and scope of the essence disengaging various embodiments of the present invention technical scheme of appropriate technical solution.
Claims (6)
1. the ultra-thin photoelectric conversion film of a kind of high conversion efficiency, it is characterised in that be composited by titanium dioxide and zinc sulphide, institute
The particle diameter of titanium dioxide is stated for 25~50nm, the particle diameter of zinc sulphide is 20~50nm.
2. the ultra-thin photoelectric conversion film of high conversion efficiency as claimed in claim 1, it is characterised in that its preparation method include with
Lower step：
(1) first electro-conductive glass substrate is cleaned, is then cleaned by ultrasonic in acetone and absolute ethyl alcohol respectively, sprayed with alcohol and dried
It is dry, nonconductive surface closed protective is got up, it is standby；
(2) by 1~2mmol parts of zinc salt, 1~2mmol CH4N2S is put into 30 parts of solvent, the material in solution is uniformly mixed
Close, obtain mixed solution A；
(3) it is raw material to use titanium-containing compound, is dissolved in mixed solution A, acetylacetone,2,4-pentanedione is added as inhibitor, then strong
Under stirring, the mixed liquor of hydrochloric acid absolute ethyl alcohol is instilled in solution, 90 DEG C of heated at constant temperature 2~8 hours obtain mixed system B；
(4) by mixed system B uniform applications on electro-conductive glass substrate, drying obtains precursor thin-film sample；
(5) precursor thin-film sample is placed on support, be placed with hydrazine hydrate can closed container, make precursor thin-film sample
Do not contacted with hydrazine, the closed container that will be equipped with precursor film sample is put into baking oven, be heated between 120~180 DEG C, protected
Warm 8~24h of time hours, room temperature taking-up is then cooled to, vacuum drying obtains the ultra-thin photoelectric conversion film of high conversion efficiency.
3. the ultra-thin photoelectric conversion film of high conversion efficiency as claimed in claim 2, it is characterised in that the zinc salt is chlorination
One kind in zinc, zinc sulfate, zinc nitrate, zinc acetate.
4. the ultra-thin photoelectric conversion film of high conversion efficiency as claimed in claim 3, it is characterised in that the solvent is, ethanol,
At least one in ethylene glycol, hydrochloric acid.
5. the ultra-thin photoelectric conversion film of high conversion efficiency as claimed in claim 4, it is characterised in that the titanium-containing compound is
One kind in butyl titanate, titanium tetrachloride, titanium sulfate.
6. the ultra-thin photoelectric conversion film of high conversion efficiency as claimed in claim 5, it is characterised in that the acetylacetone,2,4-pentanedione with contain
The mol ratio of titanium compound is：0.1~1.5：1.
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| CN201611250468.1A CN106847957A (en) | 2016-12-30 | 2016-12-30 | A kind of ultra-thin photoelectric conversion film of high conversion efficiency |
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| CN201611250468.1A CN106847957A (en) | 2016-12-30 | 2016-12-30 | A kind of ultra-thin photoelectric conversion film of high conversion efficiency |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115895295A (en) * | 2022-10-25 | 2023-04-04 | 中信钛业股份有限公司 | Preparation method of special titanium dioxide pigment for glass fiber reinforced nylon |
| CN116254012A (en) * | 2021-12-10 | 2023-06-13 | 中信钛业股份有限公司 | Preparation method of zinc sulfide modified titanium dioxide pigment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN115895295A (en) * | 2022-10-25 | 2023-04-04 | 中信钛业股份有限公司 | Preparation method of special titanium dioxide pigment for glass fiber reinforced nylon |
| CN115895295B (en) * | 2022-10-25 | 2024-03-29 | 中信钛业股份有限公司 | Preparation method of special titanium dioxide pigment for glass fiber reinforced nylon |
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