CN106847791B - Monitor the test structure of base width - Google Patents
Monitor the test structure of base width Download PDFInfo
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- CN106847791B CN106847791B CN201710003943.3A CN201710003943A CN106847791B CN 106847791 B CN106847791 B CN 106847791B CN 201710003943 A CN201710003943 A CN 201710003943A CN 106847791 B CN106847791 B CN 106847791B
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Abstract
The invention discloses a kind of test structures for monitoring base width, and the figure of the dumbbell shape of test structure intermediate region is located at comprising one；Include emitter-window at the both ends of dumbbell figure, be emitter-polysilicon window among emitter-window, the center of window is contact hole；Defining dumbbell figure is axially X-direction, is Y-direction perpendicular to X-direction；X-direction length between the emitter-window at the both ends of dumbbell figure is defined as L, and the Y-direction width of dumbbell figure handle region is defined as W；The periphery of dumbbell figure is that nested rectangle is constituted step by step by multilayer, and what it is positioned at outmost turns is base area polysilicon layer, other are inwardly followed successively by emitter polysilicon layer, emitter layer, emitter polysilicon layer, emitter polysilicon layer.The test structure of monitoring base width of the present invention, in chip-scale electrical testing stage effective monitoring SiGe base resistance, this test structure can the main processes intuitively to SiGe HBT be monitored, find and solve the problems, such as in time.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of monitoring base width in SiGe HBT device
Test structure.
Background technique
For SiGe HBT (HBT:Heterojunction Bipolar Transistor, heterojunction bipolar crystal
Pipe) device, outer base area is raised using p-type polysilicon, the autoregistration device architecture of inside wall is used between emitter and outer base area,
As shown in Figure 1, base resistance and base-collector capacitance can be reduced simultaneously, such germanium silicium HBT device is available to be greater than
The highest oscillation frequency fmax of 300GHz, performance can be suitable with III-V device, are widely used in optic communication and millimeter wave is answered
With.
SiGe HBT device uses the germanium silicon-carbon alloy mixed with boron impurities of smaller bandwidth for base stage, due to emitter
There is band difference with base stage, higher base doping can be used when guaranteeing same DC current amplification factor HFE, thus
To higher fmax.
Lesser external base resistance is the most important parameter for promoting fmax including connection (Link) resistance under side wall,
Link resistance is to determine that higher concentration and thickness can reduce by the concentration and thickness of the boron adulterated when SiGe epitaxial growth
Link resistance；However HBT is vertical devices, the thickness of interior base area, is exactly the area pinch of Fig. 1, it is highly doped emitter region
N-type doping (usually arsenic) is diffused into base area formation, for higher cutoff frequency fT, it is desirable that the area Link concentration and width compared with
It is low；In order to which the compromise of Link and pinch balances, emitter impurity needs part to be diffused into base area.
Since the Impurity Distribution of the Impurity Distribution especially base area of HBT vertical devices has very big shadow to DC and microwave characteristics
It rings, is generally characterized with Secondary Ion Mass Spectrometry (SIMS) in R&D process, as shown in Figure 2；But the SIMS method period is long, expense
Height monitors if there is an online test structure, can be expedited research and development progress, and continues during subsequent volume production
Measure technology stability.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of test structures for monitoring base width, with intuitively right
The main processes of SiGe HBT are monitored.
To solve the above problems, the test structure of monitoring base width of the present invention, for monitoring SiGe HBT's
The base resistance of technical process, the test structure are X, Y-direction along structure substantially symmetrical about its central axis, are located at comprising one and survey
Try the figure of the dumbbell shape of structure intermediate region；It include emitter-window at the both ends of dumbbell figure, among emitter-window
For emitter-polysilicon window, the center of window is contact hole；Defining dumbbell figure is axially X-direction, is Y perpendicular to X-direction
Direction；X-direction length between the emitter-window at the both ends of dumbbell figure is defined as L, and the Y-direction of dumbbell figure handle region is wide
Degree is defined as W；
It is that nested rectangle is constituted step by step by multilayer, wherein what it is positioned at outmost turns is that base area is more in the periphery of dumbbell figure
Crystal silicon layer, other are inwardly followed successively by emitter polysilicon layer, emitter layer, emitter polysilicon layer, emitter polysilicon layer.
Further, the emitter-window that dumbbell figure both ends include, width and dumbbell figure hand in Y-direction
The width in handle area is consistent, and is all W.
Further, the width of dumbbell figure both ends in the X direction and the width of dumbbell figure handle region keep one
It causes, is all W.
Further, the width for the emitter-window that dumbbell figure both ends include and the width of dumbbell figure handle region
It is consistent, can guarantee that electric current is uniform in the direction of the width.
Further, base resistor resistance value, the first resistance between the contact hole at measurement dumbbell figure both ends are monitored
Rtest, then calculated by following formula:
The test structure of monitoring base width of the present invention, provides one kind in germanium silicon autoregistration device architecture and adopts
With in the technique of selective epitaxial, in the base resistor test structure of chip-scale electrical testing (WAT) stage effective monitoring SiGe；By
The resistance that it is measured mainly is determined by germanium and silicon epitaxial technique, while being had with the hot expense of polysilicon emitter doping and activating appts
It closes, this test structure can intuitively be monitored the main processes of germanium silicium HBT, find at the first time and solve to ask
Topic.
Detailed description of the invention
Fig. 1 is the sectional view of SiGe HBT device.
Fig. 2 is the curve that SiGe HBT vertical devices are carried out with Secondary Ion Mass Spectrometry (SIMS) analysis.
Fig. 3 is the test structure of present invention monitoring base width.
Fig. 4 is the schematic diagram along Fig. 3 length L direction cutting.
Fig. 5 is the schematic diagram along Fig. 3 width W direction cutting.
Description of symbols
1 is base area polysilicon, and 2,4,5,8 be emitter-polysilicon, and 3,7 be emitter-window, and 6 be dumbbell graph area, and 9 are
Contact hole.
Specific embodiment
The test structure of monitoring base width of the present invention, the base area electricity of the technical process for monitoring SiGe HBT
Resistance is located at test structure comprising one as shown in figure 3, the test structure is X, Y-direction along structure substantially symmetrical about its central axis
The figure of the dumbbell shape of intermediate region；Include emitter-window 7 at the both ends of dumbbell figure, is hair among emitter-window 7
Emitter polysilicon window 8, the center of emitter-polysilicon window 8 are contact hole 9；Defining dumbbell figure is axially X-direction, vertically
In X-direction be Y-direction；X-direction length between the emitter-window 7 at the both ends of dumbbell figure is defined as L, dumbbell figure handle
The Y-direction width in area is defined as W.
It is that nested rectangle is constituted step by step by multilayer, wherein what it is positioned at outmost turns is that base area is more in the periphery of dumbbell figure
Crystal silicon layer 1, other are inwardly followed successively by emitter polysilicon layer 2, emitter layer 3, emitter polysilicon layer 4, emitter-polysilicon
Layer 5.
The emitter-window that dumbbell figure both ends include, the width of width and dumbbell figure handle region in Y-direction
Degree is consistent, and is all W, can guarantee that electric current is uniform in the direction of the width.The width of dumbbell figure both ends in the X direction with
The width of dumbbell figure handle region is consistent, and is all W.
Monitor base resistor resistance value, the first actual resistance R between the contact hole 9 at measurement dumbbell figure both endstest,
Then it is calculated by following formula:
Fig. 4 is the section of X-direction wherein one end of the test structure, is drawn between 8 and 9 with contact hole；Main technique
Process includes: that active area is grown in N-type extension, and active area is isolated by STI；(oxide layer+heavy doping is more for growth transmitting very thin films
Crystal silicon+oxide layer+nitration case), photoetching and etching form emitter-window；SiGe selective epitaxial growth；Emitter-polysilicon
Growth, photoetching and etching；Base area polysilicon photoetching and etching.
Fig. 5 tests the section of Y-direction one end of structure thus, wherein the polysilicon emitter between 4 and 5 is to disconnect,
This is because while germanium silicon layer is selective epitaxial growth, only in active area there is epitaxial growth, but in shallow trench region, Ke Nengye
There is part germanium silicon growth, opening a slot here together can carve the germanium silicon layer that emitter-polysilicon and germanium and silicon epitaxial dissipate possible growth
Eating away, to ensure that test structure is disconnected with other regions.
The above is only a preferred embodiment of the present invention, is not intended to limit the present invention.Come for those skilled in the art
It says, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any modification, equivalent
Replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (4)
1. a kind of test structure for monitoring base width, the base resistance of the technical process for monitoring SiGe HBT, feature
Be: the test structure is X, Y-direction along structure substantially symmetrical about its central axis, is located at test structure intermediate region comprising one
Dumbbell shape figure；Include emitter-window at the both ends of dumbbell figure, is emitter-polysilicon among emitter-window
Window, the center of window are contact hole；Defining dumbbell figure is axially X-direction, is Y-direction perpendicular to X-direction；Dumbbell figure
X-direction length between the emitter-window at both ends is defined as L, and the Y-direction width of dumbbell figure handle region is defined as W；
It is that nested rectangle is constituted step by step by multilayer, wherein what it is positioned at outmost turns is base area polysilicon in the periphery of dumbbell figure
Layer, other are inwardly followed successively by emitter polysilicon layer, emitter layer, emitter polysilicon layer, emitter polysilicon layer.
2. the test structure of monitoring base width as described in claim 1, it is characterised in that: dumbbell figure both ends include
Emitter-window, it is all W that the width of width and dumbbell figure handle region in Y-direction, which is consistent,.
3. the test structure of monitoring base width as described in claim 1, it is characterised in that: dumbbell figure both ends are in X
The width of width and dumbbell figure handle region on direction is consistent, and is all W.
4. the test structure of monitoring base width as described in claim 1, it is characterised in that: base resistor resistance value is monitored,
The resistance between the contact hole at dumbbell figure both ends is measured first, then calculated by following formula:
。
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| CN108899368B (en) * | 2018-06-29 | 2022-05-20 | 上海华虹宏力半导体制造有限公司 | Structure and process method for monitoring doping of intrinsic base region of self-aligned germanium-silicon HBT device |
| CN108807174B (en) * | 2018-06-29 | 2022-03-08 | 上海华虹宏力半导体制造有限公司 | Structure and process method for monitoring doping of germanium-silicon base region of self-aligned germanium-silicon HBT device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102479772A (en) * | 2010-11-30 | 2012-05-30 | 上海华虹Nec电子有限公司 | Test structure for monitoring source and drain polycrystalline silicon etching |
| CN103093018A (en) * | 2011-11-04 | 2013-05-08 | 上海华虹Nec电子有限公司 | Method for extracting base parasitic resistance from HBT component |
| CN104508975A (en) * | 2012-06-14 | 2015-04-08 | 天工方案公司 | Process-compensated HBT power amplifier bias circuits and methods |
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| JP2002299603A (en) * | 2001-03-29 | 2002-10-11 | Nec Corp | Semiconductor device |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102479772A (en) * | 2010-11-30 | 2012-05-30 | 上海华虹Nec电子有限公司 | Test structure for monitoring source and drain polycrystalline silicon etching |
| CN103093018A (en) * | 2011-11-04 | 2013-05-08 | 上海华虹Nec电子有限公司 | Method for extracting base parasitic resistance from HBT component |
| CN104508975A (en) * | 2012-06-14 | 2015-04-08 | 天工方案公司 | Process-compensated HBT power amplifier bias circuits and methods |
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