CN1068470C - Single wafer oscillator capable of automatically selecting internal or external oscillation resistance - Google Patents
Single wafer oscillator capable of automatically selecting internal or external oscillation resistance Download PDFInfo
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- CN1068470C CN1068470C CN97101008A CN97101008A CN1068470C CN 1068470 C CN1068470 C CN 1068470C CN 97101008 A CN97101008 A CN 97101008A CN 97101008 A CN97101008 A CN 97101008A CN 1068470 C CN1068470 C CN 1068470C
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Abstract
The present invention relates to a single wafer oscillator which can automatically use an internal oscillating resistor and an external oscillating resistor. An interface circuit of an oscillating resistor is used for automatically detecting whether an oscillation connecting pin of a wafer has an additional oscillating resistor, if the additional oscillating resistor exists, the additional oscillating resistor is used, and if the additional oscillating resistor does not exist, an internal built oscillating resistor in the manufacture of the wafer is used for controlling the oscillating frequency of the oscillator without the external connection of a resistor element. In the application, the internal oscillating resistor and the external oscillating resistor can be switched without the consideration of the additional oscillating resistor. No other control connecting pin is required for selection, and the cost saving and the convenience of practical application are realized.
Description
The present invention relates to a kind of single-chip vibration generator that can select inside and outside oscillation resistance automatically for use, utilize the interface circuit of oscillation resistance to detect automatically to have or not on the pin of wafer vibration and add oscillation resistance, use and select to add oscillation resistance or built-in oscillation resistance is controlled frequency of oscillation, can reach and save cost and practical application purpose easily.
Press, vibration generator such as Fig. 1 and Fig. 2 A that general single-chip is adopted, shown in the 2B, roughly be divided into oscillating crystal type (CRYSTAL-TYPE), pottery magnetic resonance type (CERAMIC RESONATOR-TYPE) or resistance-capacitance type (RC-TYPE) etc., the former two system is applied in the device that needs accurate frequency of oscillation, frequency of oscillation with vibration generator circuit 30 in the resonance frequency decision single-chip 20 of oscillating crystal 10 or pottery magnetic resonance device 10, but its shortcoming is that the element cost is higher, when a large amount of production, to cause dealer's a burden greatly, and improve whole production cost.
The application that resistance-capacitance type system considers based on low cost, can change the resistance of resistance and change the frequency of oscillation of vibration generator circuit 30 in the single-chip 20, usually in order to reach the frequency of oscillation of elasticity control vibration generator circuit 30, the mode that is added on single-chip 20 beyond the oscillation resistance R1 system is implemented (as Fig. 2 A, shown in the 2B), but this has increased the finished product processing steps again, cause the growth in man-hour, personnel such as drop at the increase of production cost, and the space of printed circuit board (PCB) also changes because of adding oscillation resistance R1, problems such as (LAYOUT) must be reconfigured, so still be not the design an of the best to it.
Shown in Fig. 3 A, 3B, another commonly uses the built-in resistance-capacitance type oscillator of single-chip shown in it, and the built-in resistance-capacitance type oscillator of this kind is for avoiding the aforementioned type oscillator that adds in shortcomings such as element cost, finished product processing and printed circuit board space.General built-in resistance R 2 all with the well (WELL) of manufacture of semiconductor structure as resistance.But it is positive and negative 20% that the resistance error value of this well may reach, if because of the resistance parameter error of single-chip 20 manufacture processes, will make oscilator drift can't reach the requirement specification, causes the reduction of production qualification rate; Or because of actual demand must change frequency of oscillation, then this built-in oscillator is promptly selected in manufacture process because of oscillation resistance R2, can't change the frequency of oscillation of vibration generator circuit 30, lacks the elasticity of practical application.
Because the shortcoming of above-mentioned conventional approaches still is difficult to perfect at aspects such as element cost, finished product processing and application elasticity; For this reason, the present invention provides a kind of single-chip vibration generator that can select inside and outside oscillation resistance automatically for use for the problem that solves above-mentioned existence in the prior art, remedying the shortcoming of known single-chip oscillator, and have low cost concurrently, improve the production qualification rate and increase advantages such as range of application elasticity.
According to above-mentioned, the technology used in the present invention means lie in sets up one between the built-in oscillation resistance of single-chip vibration pin and the vibration generator and detects the interface testing circuit that has or not external resistor, can be implemented in the vibration generator start before having or not of detection external resistor automatically.If add oscillation resistance, then adopt and add oscillation resistance; Do not add oscillation resistance if having, then adopt built-in oscillation resistance, with the frequency of oscillation of control vibration generator.
Purpose of the present invention, feature and effect will be in conjunction with following specific embodiments, and with reference to the accompanying drawings, are described in detail as follows:
Brief Description Of Drawings:
Fig. 1 is the circuit diagram of known single-chip oscillating crystal type or pottery magnetic resonance type oscillator;
Fig. 2 A, 2B are the circuit diagrams of known single-chip external resistor capacitor type oscillator;
Fig. 3 A, 3B are the circuit diagrams of the built-in resistance-capacitance type oscillator of known single-chip;
Fig. 4 is an electrical block diagram of the present invention;
Fig. 5 is the interface testing circuit figure of the embodiment of the invention.
As shown in Figure 4, it is an electrical block diagram of the present invention; The present invention is that vibration generator circuit 30 and 40 of pins of wafer vibration set in single-chip 20 adds an interface testing circuit 50.
As shown in Figure 5, Fig. 5 is the interface testing circuit figure of the embodiment of the invention; This interface testing circuit 50 includes:
One external oscillation resistance R3, the one end is connected to circuit high potential or circuit electronegative potential, the other end then is connected to wafer vibration pin 40 and the oscillators that are directly inputted in the single-chip 20 produce circuit 30, can replace built-in oscillation resistance R4, with the frequency of oscillation of control vibration generator circuit 30.
One built-in oscillation resistance R4, the one end is connected internally to circuit high potential or circuit electronegative potential in wafer, the other end is connected in the end that a built-in oscillation resistance connects switch 55, promptly with respect to required frequency of oscillation, selects the oscillation resistance of a suitable resistance for use when lying in single-chip 20 productions.
One sense cycle signal 51, with its input to internal resistance ON-OFF control circuit 54, testing result latchs part 52, bias transistor (BIAS MOS) 53, before vibration generator circuit 30 starts, this signal will be activated a period of time earlier, detects to have or not in these 51 startup periods of sense cycle signal to add oscillation resistance R3.
One testing result latchs part (LATCH) 52, one input end is a sense cycle signal 51, another input is the output of bias transistor 53, and there is an output to be connected to internal resistance ON-OFF control circuit 54, store in will vibrate in the 51 action cycles state of pin 40 of sense cycle signal, and in the sense cycle signal after 51 action cycles, as having or not the flag that adds oscillation resistance R3.
One bias transistor (BIAS MOS) 53, its control utmost point G system is coupled to sense cycle signal 51, source S system is coupled to wafer vibration pin 40 and is coupled to the input that testing result latchs part 52, in sense cycle, do not add oscillation resistance R3 if having, the pin 40 that then wafer vibrated is biased into and adds the opposite potential that oscillation resistance R3 will connect current potential; That is add oscillation resistance R3 and be connected to the circuit high potential by wafer vibration pin 40, not adding oscillation resistance R3 if having, bias transistor 53 is biased into the circuit electronegative potential with the wafer pin 40 that vibrates; Bias transistor 53 is compared with the resistance that adds oscillation resistance R3, is high impedance (High Impedence).
One internal resistance ON-OFF control circuit 54, it accepts the output signal that sense cycle signal 51 and testing result latch part 52, and according to this binary signal built-in oscillation resistance is connected switch 55 and open (ON) and close (OFF) and control; In the sense cycle signal in 51 action cycles or sense cycle signal after 51 action cycles,, then built-in oscillation resistance is connected switch 55 and close (OFF) if testing result latchs part 52 when showing external oscillation resistance R3.
One built-in oscillation resistance connects switch 55, and the one end is connected in built-in oscillation resistance R4, and other end system is connected in wafer vibration pin 40, selects by the switching of switch by outer meeting resistance R3 or built-in oscillation resistance R4 vibration.
The present invention will do a detailed description by following examples:
In the time of single-chip 20 power initiations, or before the 30 vibration startups of vibration generator circuit, by the single-chip 20 inner sense cycle signals 51 that produce, this sense cycle signal 51 is at first through internal resistance ON-OFF control circuit 54, built-in oscillation resistance switch 55 cuts out (OFF), make built-in oscillation resistance R4 separate with wafer vibration pin 40, the circuit high potential of single-chip 20 inside can not conduct to wafer vibration pin 40 via built-in oscillation resistance R4; In this simultaneously, sense cycle signal 51 also starts bias transistor 53, makes wafer vibration pin 40 be connected to the circuit electronegative potential in the mode of high impedance (High Impedence).
At this moment, if the wafer of single-chip 20 vibration pin 40 is not connected to the circuit high potential through adding oscillation resistance R3 in single-chip 20 outsides, then this wafer vibration pin 40 will rest on high impedance circuit electronegative potential (High Impedence Low), this state will be delivered to testing result and latch part 52 storages, testing result latchs the state that part 52 will store " built-in oscillation resistance connects switch and connects (ON) ", but if in this sense cycle signal in 51 action cycles, single-chip 20 outsides have external oscillation resistance R3 that the wafer pin 40 that vibrates is connected to the circuit high potential, then the promotion ability because of bias transistor 53 and external oscillation resistance R3 is in a ratio of high impedance, so wafer vibration pin 40 will be biased to the circuit high potential, and this state will be delivered to testing result and latch part 52 and store, and testing result latchs the flag that part 52 will store " built-in oscillation resistance connects switch and separates (OFF) ".
In the sense cycle signal after 51 action cycles, sense cycle signal 51 connects the release that switch 55 separates via internal resistance ON-OFF control circuit 54 with built-in oscillation resistance, and the action of the bias voltage of bias transistor 53 also finishes, after this storage data that internal resistance ON-OFF control circuit 54 promptly latchs part 52 according to testing result is controlled built-in oscillation resistance and is connected switch 55, do not add oscillation resistance R3 if having, then testing result latchs the flag that part 52 is storing " built-in oscillation resistance connects switch and connects ", make built-in oscillation resistance R4 link to each other with wafer vibration pin 40, vibration generator circuit 30 promptly produces corresponding frequency of oscillation according to the resistance of built-in oscillation resistance R4; If add oscillation resistance R3, then testing result latchs the flag that part 52 is storing " built-in oscillation resistance connects switch and separates ", and vibration generator circuit 30 promptly produces corresponding frequency of oscillation according to the resistance that adds oscillation resistance R3.
In sum, the single-chip vibration generator that can select inside and outside oscillation resistance automatically for use provided by the present invention, can be at the disappearance and the unconsummated effect of traditional methods, effective settling mode is proposed, further increased the function that the mode of commonly using does not have, not only can reach outside the practical effect of expection, and be new design not seen before.
Below the present invention has been done a detailed description, the above is preferred embodiment of the present invention only, is not the qualification to scope of the invention process.Be that all equalizations of doing according to claim scope of the present invention change and modify etc., all should belong within protection scope of the present invention.
Claims (6)
1. the single-chip resistance-capacitance oscillator that can select inside and outside oscillation resistance automatically for use, above-mentioned resistance-capacitance oscillator comprises that vibration produces circuit and the pin that is connected external oscillation resistance, it is characterized in that: also comprise an interface testing circuit, this testing circuit is arranged between the pin of vibration generation circuit and external oscillation resistance, behind the wafer power initiation, before the vibration generator circuit start, sense cycle signal of the inner generation automatically of single-chip, this interface testing circuit promptly can judge whether to add oscillation resistance, and with this judgment data storage, the foundation of after the sense cycle signal, whether joining with wafer vibration pin as built-in oscillation resistance, promptly automatically adopt built-in oscillation resistance if testing result has the oscillation resistance of adding, and produce the frequency of oscillation of corresponding resistance with vibration generator circuit; If add oscillation resistance, vibration generator circuit promptly produces corresponding frequency of oscillation according to the resistance that adds oscillation resistance.
2. the single-chip resistance-capacitance oscillator that can select inside and outside oscillation resistance automatically for use as claimed in claim 1 is characterized in that this interface testing circuit comprises:
A sense cycle signal source, the sense cycle signal is inputed to internal resistance ON-OFF control circuit, testing result latch part, bias transistor, before vibration generator circuit start, this signal will be activated a period of time earlier, detects to have or not in this sense cycle startup period to add oscillation resistance;
A testing result latchs part, an one input is the sense cycle signal, another input is the output of bias transistor, and there is an output to be connected to the internal resistance ON-OFF control circuit, the state of pin of will vibrating in sense cycle stores, and after the sense cycle signal, as having or not the flag that adds oscillation resistance.
A bias transistor, its control utmost point is coupled to sense cycle signal source, source-coupled to vibrate pin and be coupled to testing result latch the part an input, in cycle of oscillation, do not add oscillation resistance if having, then the chip oscillate pin is biased into and adds the opposite potential that oscillation resistance will connect current potential; That is add oscillation resistance and be connected to the circuit high potential by the chip oscillate pin, not adding oscillation resistance if having, bias transistor is biased into the circuit electronegative potential with the wafer pin that vibrates; Bias transistor is compared with adding oscillation resistance, form the state of high impedance;
An internal resistance ON-OFF control circuit, it accepts the sense cycle signal and testing result latchs output signal partly, and according to this binary signal built-in oscillation resistance switch is opened ON and closed OFF control; In sense cycle or after the sense cycle,, then built-in oscillation resistance is connected switch and close OFF if when the testing result nonresident portion shows external oscillation resistance;
A built-in oscillation resistance connects switch, and the one end is connected in built-in oscillation resistance, and other end system is connected in the chip oscillator pin, selects by the switching of switch by outer meeting resistance or the vibration of built-in oscillation resistance.
3. the single-chip resistance-capacitance oscillator that can select inside and outside oscillation resistance automatically for use as claimed in claim 1 is characterized in that, this wafer vibration pin can an external oscillation resistance, in order to replace built-in oscillation resistance.
4. the single-chip resistance-capacitance oscillator that can select inside and outside oscillation resistance automatically for use as claimed in claim 1, it is characterized in that, this built-in oscillation resistance is constituted with the well in the manufacture of semiconductor structure, when single-chip designs, for can applicable frequency of oscillation specification, the resistance of built-in multiple corresponding resistance, in making the process of producing, a selected suitable resistance is as the vibration resistance again.
5. the single-chip resistance-capacitance oscillator that can select inside and outside oscillation resistance automatically for use as claimed in claim 1, it is characterized in that, the connected mode of this external oscillation resistance, difference because of vibration generator circuit structure, can be an end and be connected to circuit high potential or circuit electronegative potential, the other end then is connected to the vibration pin and is directly inputted into oscillating circuit in the single-chip.
6. the single-chip resistance-capacitance oscillator that can select inside and outside oscillation resistance automatically for use as claimed in claim 1, it is characterized in that, the connected mode of this built-in oscillation resistance, difference because of vibration generator circuit structure, can be an end and be connected to circuit high potential or circuit electronegative potential, the other end then is connected in the end that built-in oscillation resistance connects switch.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97101008A CN1068470C (en) | 1997-01-07 | 1997-01-07 | Single wafer oscillator capable of automatically selecting internal or external oscillation resistance |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN97101008A CN1068470C (en) | 1997-01-07 | 1997-01-07 | Single wafer oscillator capable of automatically selecting internal or external oscillation resistance |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1187716A CN1187716A (en) | 1998-07-15 |
| CN1068470C true CN1068470C (en) | 2001-07-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN97101008A Expired - Fee Related CN1068470C (en) | 1997-01-07 | 1997-01-07 | Single wafer oscillator capable of automatically selecting internal or external oscillation resistance |
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| Country | Link |
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| CN (1) | CN1068470C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103116974A (en) * | 2013-03-04 | 2013-05-22 | 中颖电子股份有限公司 | Remote control chip for reducing frequency drift of inbuilt oscillating circuit |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6344544B2 (en) * | 2013-11-11 | 2018-06-20 | セイコーエプソン株式会社 | Oscillator manufacturing method, semiconductor circuit device manufacturing method, and semiconductor circuit device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5010561A (en) * | 1988-05-23 | 1991-04-23 | Advanced Micro Devices, Inc. | Circuit for multiplying the frequency in one series of input pulses |
| EP0453035A1 (en) * | 1990-04-20 | 1991-10-23 | Koninklijke Philips Electronics N.V. | Controllable oscillator circuit |
-
1997
- 1997-01-07 CN CN97101008A patent/CN1068470C/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5010561A (en) * | 1988-05-23 | 1991-04-23 | Advanced Micro Devices, Inc. | Circuit for multiplying the frequency in one series of input pulses |
| EP0453035A1 (en) * | 1990-04-20 | 1991-10-23 | Koninklijke Philips Electronics N.V. | Controllable oscillator circuit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103116974A (en) * | 2013-03-04 | 2013-05-22 | 中颖电子股份有限公司 | Remote control chip for reducing frequency drift of inbuilt oscillating circuit |
| CN103116974B (en) * | 2013-03-04 | 2015-06-17 | 中颖电子股份有限公司 | Remote control chip for reducing frequency drift of inbuilt oscillating circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1187716A (en) | 1998-07-15 |
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