CN106845005B - Method and device for optimizing configuration of conductive loop at ring main unit partition plate and server - Google Patents
Method and device for optimizing configuration of conductive loop at ring main unit partition plate and server Download PDFInfo
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- CN106845005B CN106845005B CN201710081189.5A CN201710081189A CN106845005B CN 106845005 B CN106845005 B CN 106845005B CN 201710081189 A CN201710081189 A CN 201710081189A CN 106845005 B CN106845005 B CN 106845005B
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Abstract
The disclosure relates to a method, a device and a server for optimizing the configuration of a conductive loop at a ring main unit partition plate, wherein a simulation model is established; carrying out meshing on the simulation model; selecting a target model from the simulation models after grid division; applying analog voltage and analog current on the target model to calculate the electric field and current density of the simulation model; if the electric field and/or the current density is larger than the corresponding judgment threshold, correcting the simulation model according to an adjustment strategy; and if the electric field and the current density are both smaller than or equal to the corresponding judgment threshold values, generating a configuration result of the conductive loop of the ring main unit according to the simulation model. Quantitative analysis can be carried out on the electric field and the current density of the ring main unit through numerical calculation, so that the configuration mode of the ring main unit conductor is effectively optimized and adjusted, the electric field and the current density of the ring main unit are reduced, and the reliability is improved.
Description
Technical Field
The disclosure relates to the technical field of power equipment, in particular to a method and a device for optimizing configuration of a conductive loop at a ring main unit partition plate and a server.
Background
The ring main unit is generally used for switching on/off load current, switching off short-circuit current and transformer no-load current, and charging current of a certain distance overhead line and a cable line, plays a role in control and protection, and is important switch equipment for ring network power supply and terminal power supply. In an alternating current 10kV power distribution system of industrial and mining enterprises, residential districts, ports, high-rise buildings and the like, a high-voltage loop of the system usually adopts a load switch and is provided with a high-voltage fuse for protection.
The ring main unit is usually provided with a circuit breaker chamber, each circuit breaker chamber is internally provided with a conductive loop, each conductive loop is connected to an alternating current circuit of a corresponding phase, and adjacent conductive loops are mutually spaced through a partition plate of the circuit breaker chamber, so that the purpose of mutual insulation is achieved. However, the inventor finds, through research, that if the conductive loop in the ring main unit is unreasonable, the electric field intensity at the local position in the breaker chamber is too strong, or the current density at the local position on the conductor is too large, so that safety accidents such as breakdown and burnout are easily caused in the working process of the ring main unit, and the reliability is poor. Therefore, how to improve the reliability of the ring main unit is a technical problem that needs to be solved urgently by those skilled in the art.
Disclosure of Invention
The embodiment of the invention provides a method, a device and a server for optimizing configuration of a conductive loop at a partition plate of a ring main unit, and aims to solve the technical problem of poor reliability of the ring main unit in the prior art.
In order to solve the technical problem, the embodiment of the invention discloses the following technical scheme:
according to a first aspect of the present invention, an embodiment of the present invention provides a method for optimizing configuration of a conductive loop at a partition of a ring main unit, where the method includes:
establishing a simulation model, wherein the simulation model comprises a partition plate model and at least 3 conductor models;
carrying out meshing on the simulation model;
selecting a target model from the simulation models after grid division; applying analog voltage and analog current on the target model to calculate the electric field and current density of the simulation model;
if the electric field and/or the current density is larger than the corresponding judgment threshold, correcting the simulation model according to an adjustment strategy; wherein the adjustment strategy comprises one or more of adjusting the phase distance, adjusting the chamfer angle of the copper bar and adjusting the contact of the conductor; alternatively, the first and second electrodes may be,
if the electric field and the current density are both less than or equal to the corresponding judgment threshold values, according to the simulation model,
and generating a configuration result of the conductive loop of the ring main unit.
Optionally, the mesh partitioning of the simulation model includes:
acquiring a historical fault record of the ring main unit, wherein the historical fault record comprises a fault position and a fault frequency;
setting the grid density of a simulation model corresponding to a fault position according to the fault frequency;
and dividing the simulation model into a plurality of grids according to the grid density.
Optionally, the mesh partitioning of the simulation model includes:
setting corresponding grid density according to the edge radian of the simulation model;
and dividing the edge area of the simulation model into a plurality of grids according to the grid density.
Optionally, modifying the simulation model according to the adjustment policy includes:
setting the priority of an adjusting strategy according to the difference value between the electric field and/or the current density and the corresponding judgment threshold;
and preferentially selecting an adjusting strategy with high priority to correct the simulation model.
Optionally, the target model is a conductor model at an intermediate position among the at least 3 conductor models, and
the analog voltage value is 12000V, and the analog current is 630A.
According to a second aspect of the present invention, an embodiment of the present invention provides an apparatus for optimizing configuration of a conductive loop at a partition of a ring main unit, where the apparatus includes:
the modeling module is used for establishing a simulation model, wherein the simulation model comprises a partition plate model and at least 3 conductor models;
the meshing module is used for meshing the simulation model;
the calculation module is used for selecting any one conductor model from the simulation models subjected to grid division as a target model; calculating the electric field and current density of a simulation model by simulating the voltage and the current on the target model;
the correction module is used for correcting the simulation model according to an adjustment strategy if the electric field and/or the current density is larger than a corresponding judgment threshold; wherein the adjustment strategy comprises one or more of adjusting the phase distance, adjusting the chamfer angle of the copper bar and adjusting the contact of the conductor;
and the result generation module is used for generating a configuration result of the conductive loop of the ring main unit according to the simulation model if the electric field and the current density are both smaller than or equal to the corresponding judgment threshold values.
Optionally, the meshing module is configured to,
acquiring a historical fault record of the ring main unit, wherein the historical fault record comprises a fault position and a fault frequency;
setting the grid density of a simulation model corresponding to a fault position according to the fault frequency;
and dividing the simulation model into a plurality of grids according to the grid density.
Optionally, the meshing module is configured to,
setting corresponding grid density according to the edge radian of the simulation model;
and dividing the edge of the simulation model into a plurality of grids according to the grid density.
Optionally, the modification module is configured to,
setting the priority of an adjusting strategy according to the difference value between the electric field and/or the current density and the corresponding judgment threshold;
and preferentially selecting an adjusting strategy with high priority to correct the simulation model according to the priority.
According to a third aspect of the present invention, an embodiment of the present invention provides a server, including at least one processor; and the number of the first and second groups,
a memory communicatively coupled to the at least one processor; wherein the content of the first and second substances,
the memory stores instructions executable by the one processor to cause the at least one processor to:
establishing a simulation model, wherein the simulation model comprises a partition plate model and at least 3 conductor models;
carrying out meshing on the simulation model;
selecting any one conductor model from the simulation models subjected to grid division as a target model; applying analog voltage and analog current on the target model to calculate the electric field and current density of the simulation model;
if the electric field and/or the current density is larger than the corresponding judgment threshold, correcting the simulation model according to an adjustment strategy; wherein the adjustment strategy comprises one or more of adjusting the phase distance, adjusting the chamfer angle of the copper bar and adjusting the contact of the conductor; alternatively, the first and second electrodes may be,
and if the electric field and the current density are both smaller than or equal to the corresponding judgment threshold values, generating a configuration result of the conductive loop of the ring main unit according to the simulation model.
The technical scheme provided by the embodiment of the disclosure can have the following beneficial effects: the embodiment of the invention provides a method, a device and a server for optimizing configuration of a conductive loop at a ring main unit partition plate, wherein a simulation model is established, wherein the simulation model comprises a partition plate model and at least 3 conductor models; carrying out meshing on the simulation model; selecting a target model from the simulation models after grid division; applying analog voltage and analog current on the target model to calculate the electric field and current density of the simulation model; if the electric field and/or the current density is larger than the corresponding judgment threshold, correcting the simulation model according to an adjustment strategy; wherein the adjustment strategy comprises one or more of adjusting the phase distance, adjusting the chamfer angle of the copper bar and adjusting the contact of the conductor; or if the electric field and the current density are both smaller than or equal to the corresponding judgment threshold values, generating a configuration result of the conductive loop of the ring main unit according to the simulation model. Quantitative analysis can be carried out on the electric field and the current density of the ring main unit through numerical calculation, so that the configuration mode of the ring main unit conductor is effectively optimized and adjusted, the electric field and the current density of the ring main unit are reduced, and the reliability is improved.
It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the disclosure.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
Fig. 1 is a schematic flow chart of a method for optimizing configuration of a conductive loop at a partition of a ring main unit according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of a simulation model according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a simulation model after grid division according to an embodiment of the present invention;
fig. 4 is a schematic flowchart of a mesh division method according to an embodiment of the present invention;
fig. 5 is a schematic flowchart of another meshing method according to an embodiment of the present invention;
fig. 6 is a schematic flow chart of a correction method according to an embodiment of the present invention;
fig. 7 is a schematic structural diagram of an optimization device for configuration of a conductive loop at a partition of a ring main unit according to an embodiment of the present invention;
fig. 8 is a schematic diagram of a hardware structure of a server for executing the method for optimizing configuration of a conductive loop at a partition of a ring main unit according to an embodiment of the present invention.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the technical solution in the embodiment of the present invention will be clearly and completely described below with reference to the drawings in the embodiment of the present invention, and it is obvious that the described embodiment is only a part of the embodiment of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, a schematic flow chart of a method for optimizing configuration of a conductive loop at a partition of a ring main unit according to an embodiment of the present invention is shown in fig. 1, where the method includes:
step S101: establishing a simulation model, wherein the simulation model comprises a diaphragm model and at least 3 conductor models.
In a specific implementation, the simulation model may be built by using a modeling tool, for example, by using one or more of MATLAB, autocandintonator, and ANSYS works bench, a three-dimensional model may be built for describing configuration attributes of the ring main unit, such as structure, connection, and the like.
Since the ring main unit is usually provided with 3 conductors, the conductors are respectively connected to the high-voltage ac circuits of corresponding phases, and each conductor is respectively provided with a conductor chamber which is separated by a partition plate, in order to accurately describe the use scene of the ring main unit, the embodiment of the invention provides a simulation model. Referring to fig. 2, a schematic structural diagram of a simulation model provided in an embodiment of the present invention is shown in fig. 2, where the simulation model includes 3 conductor models 1 and 3 spacer models 2; wherein, 2 baffle models 2 are parallel to each other, and 1 remaining baffle model is perpendicular with 2 baffle models mutually, like this, all baffle models 2 can be divided into 3 conductor rooms, and conductor model 2 sets up respectively in corresponding conductor room.
Step S102: and carrying out meshing on the simulation model.
In order to facilitate the numerical calculation of the electric field and the current density, in the embodiment of the present invention, the simulation model needs to be gridded. Referring to fig. 3, a schematic structural diagram of a simulation model after grid division according to an embodiment of the present invention is shown in fig. 3, where the simulation model is divided into a plurality of grids, and electric field and current density values at nodes of each grid can be calculated by using a numerical calculation method such as a finite element method based on the grids.
In a first implementation case, in order to improve the efficiency of the numerical calculation of the electric field and the current density, referring to fig. 4, a flowchart of a meshing method provided in an embodiment of the present invention is shown in fig. 4, where the method includes:
step S1021: and acquiring a historical fault record of the ring main unit, wherein the historical fault record comprises a fault position and a fault frequency.
In the using process of the ring main unit, the fault of the ring main unit can be recorded, and a historical fault record is generated, wherein the historical fault record at least comprises a fault position and a fault frequency. For example, in a ring main unit including 3 conductors, i.e., a first conductor, a second conductor and a third conductor, an exemplary historical fault record may be that the first fault location: the contact position of the copper bar of the second conductor has a first fault frequency of 2 times/year; second failure position: the second conductor and the intermediate partition board of the first conductor, the second failure frequency is 4 times/year; third failure position: the conductor contact position of the second conductor, and the third failure frequency was 1/year.
Step S1022: and setting the grid density of the simulation model corresponding to the fault position according to the fault frequency.
In the embodiment of the invention, the simulation model is used for describing the structure and connection of the real ring main unit, and the simulation model and the ring main unit have a corresponding relation, so that the simulation model with the fault and the model fault position in the specific simulation model can be also corresponding to the simulation model with the fault according to the fault position in the historical fault record. Further, according to the fault frequency, the grid density of the corresponding simulation model is set.
In an exemplary embodiment, according to the result of step S1021, if the first fault location is the second copper conductor bar contact location, in the second conductor model, a first model fault location corresponding to the first fault location may be determined; further, the grid density at the position of the first model fault is set to be a first grid density according to the first fault frequency. Likewise, a second grid density at the second model fault location is set based on the second fault location, a second model fault location on the bulkhead model between the first conductor model and the second conductor model; a third grid density at the third fault location is set at a third model fault location of conductor contact locations on the second conductor model based on the third fault location. Since the second failure frequency > the first failure frequency > the third failure frequency, the corresponding second grid density > the first grid density > the third grid density, the higher the grid density, the more grids are divided at the position, and the more accurate the numerical calculation result is.
Step S1023: and dividing the simulation model into a plurality of grids according to the grid density.
Further, the grid density is determined according to step S1022, and different regions of the simulation model are correspondingly divided into a plurality of grids for subsequent numerical calculation of the electric field and the current density.
Because the working voltage of the conductor in the ring main unit is very high, the electric field or current density is usually large in the key area of the ring main unit, and in order to improve the numerical calculation accuracy of the electric field and current of the ring main unit, referring to fig. 5, a flow diagram of another mesh division method provided by the embodiment of the present invention is shown in fig. 5, and the method includes:
step S1024: and setting corresponding grid density according to the edge radian of the simulation model.
In the simulation model, the radian of the edge of the copper bar of the first conductor model may be small, for example, close to a right angle, etc., which means that a large tip electric field may exist at the edge position of the copper bar of the first conductor model, and accordingly, the grid density at the edge position of the copper bar of the first conductor model is set as a first grid density; the radian of the edge of the conductor on the first conductor model may be larger, such as a larger arc or a straight line, which is not easy to generate a larger electric field at the edge position of the conductor on the first conductor model, and accordingly, the grid density at the edge position of the conductor on the first conductor model is set to the second grid density. Moreover, the first lattice density is greater than the second lattice density.
Step S1025: and dividing the simulation model into a plurality of grids according to the grid density.
And dividing the critical area on the simulation model into a plurality of grids according to the grid density so as to carry out grid optimization.
Through the grid division method described in the embodiment, the grid optimization can be performed on the critical area which is easy to have faults or generate a large electric field and large current density on the simulation model according to the historical fault record or the edge condition of the simulation model, the high accuracy of numerical calculation of the critical area is ensured, and meanwhile, the numerical calculation amount of other areas can be reduced, so that the efficiency of numerical calculation is effectively improved.
Step S103: selecting a target model from the simulation models after grid division; and calculating the electric field and the current density of the simulation model by applying a simulation voltage and a simulation current on the target model.
And selecting a target model from the simulation models after the grid division. The simulation model in an exemplary embodiment includes a first conductor model, a second conductor model, and a third conductor model, wherein the second conductor model is located in the middle of the first conductor model and the second conductor model, and since the second conductor model is simultaneously influenced by 2 conductor models, and the first conductor model or the third conductor model is located at the edge and is influenced by only 1 conductor model, the probability of generating a large electric field or a large current density on the second conductor model is higher, and thus the second conductor model is selected as the target model. Of course, in specific implementation, any other conductor model may be selected as the target model, and the number of the target models is not necessarily limited to 1, and may be 2, 3, and the like, which is not limited in the embodiment of the present invention.
And applying an analog voltage and an analog current to the selected target model. Referring also to fig. 2, an analog voltage is applied at location a of the second conductor pattern in fig. 2 and an analog current is applied at location B of the second conductor pattern. The analog voltage of an exemplary embodiment is set to 12000V and the analog current is set to 630A. Of course, the analog voltage and the analog current may be set to any other values according to actual simulation requirements. Further, the voltage and current density on each grid node on the simulation model can be calculated through numerical calculation.
Step S104: if the electric field and/or the current density is larger than the corresponding judgment threshold, correcting the simulation model according to an adjustment strategy; wherein the adjustment strategy comprises one or more of adjusting the phase distance, adjusting the chamfer angle of the copper bar and adjusting the contact of the conductor.
To facilitate evaluation of the calculated electric fields and current densities, in one implementation, the maximum electric field may be selected from all calculated electric fields and the maximum current density may be selected from all calculated current densities. When the maximum electric field is greater than the electric field judgment threshold, or the maximum current density is greater than the current density judgment threshold, or the maximum electric field is greater than the electric field judgment threshold and the maximum current density is greater than the current density judgment threshold, it indicates that the current simulation model cannot meet the actual working requirement, and the simulation model needs to be corrected. In the embodiment of the invention, the simulation model is corrected by adjusting the strategy; wherein the adjustment strategy comprises one or more of adjusting the phase distance, adjusting the chamfer angle of the copper bar and adjusting the contact of the conductor. Specifically, adjusting the phase spacing is adjusting the electric field and the current density by adjusting the distance between adjacent conductor patterns, and both the electric field and the current density generally decrease with increasing phase spacing; the chamfering of the copper bar is adjusted by adjusting the size of a fillet on the conductor model, and the electric field and the current density are adjusted, and generally the electric field and the current density are reduced along with the increase of the fillet; adjusting conductor contact is adjusting the electric field and current density by increasing the contact area of the conductor on the conductor pattern, generally decreasing with increasing conductor contact area.
In order to improve the correction efficiency of the simulation model, referring to fig. 6, a flowchart of a correction method provided in an embodiment of the present invention is shown in fig. 6, where the method includes:
step S1041: and setting the priority of the adjustment strategy according to the difference value between the electric field and/or the current density and the corresponding judgment threshold value.
In specific implementation, when the difference between the maximum electric field and the electric field judgment threshold is greater than or equal to the electric field difference threshold, or the difference between the maximum current density and the current density judgment threshold is greater than or equal to the current density difference threshold, or the difference between the maximum electric field and the electric field judgment threshold is greater than or equal to the electric field difference threshold, and the difference between the maximum current density and the current density judgment threshold is greater than or equal to the current density judgment threshold, it indicates that the electric field and/or the current density calculated by the current simulation model has a large difference from the corresponding judgment threshold. Because the influence degrees of the adjustment strategies on the electric field and the current density are different, wherein the influence degree of the adjustment strategy on the copper bar chamfering is larger than the influence degree of the adjustment strategy on the conductor contact is larger than the influence degree of the adjustment strategy on the phase spacing, in order to obtain a simulation model meeting the actual requirement as soon as possible, the priority of the adjustment strategy can be set as follows: adjusting the chamfer angle of the copper bar, adjusting the contact of the conductor and adjusting the phase distance.
When the difference value between the maximum electric field and the electric field judgment threshold is smaller than the electric field difference value threshold, or the difference value between the maximum current density and the current density judgment threshold is smaller than the current density difference value threshold, or the difference value between the maximum electric field and the electric field judgment threshold is smaller than the electric field difference value threshold, and the difference value between the maximum current density and the current density judgment threshold is smaller than the current density judgment threshold, it indicates that the electric field and/or the current density calculated by the current simulation model has a smaller difference with the corresponding judgment threshold. At this time, only simple optimization and adjustment need be performed on the current simulation model, so that the priority of the adjustment strategy can be set according to the actual production cost caused by the adjustment strategy. The adjustment of the phase spacing strategy only needs to adjust the spacing between the adjacent conductor models, so that the influence on the actual production cost is small; production processes are required to be added for adjusting the chamfering of the copper bar, and only the copper bar needs to be subjected to chamfering treatment, so that the process cost is increased, and the actual production cost is greatly influenced; adjusting the conductor strategy requires increasing the contact area of the conductor on the conductor model, and increasing the cost of both process and material, which has the greatest impact on the actual production cost; thus, the priority of the adjustment policy can be set as: adjusting the phase distance, adjusting the chamfer angle of the copper bar and adjusting the contact of the conductors.
Step S1042: and preferentially selecting an adjusting strategy with high priority to correct the simulation model according to the priority.
And after the priority of the adjustment strategies is determined, correcting the simulation model by adopting one or more adjustment strategies according to the priority sequence. In an exemplary embodiment, when the difference is large, the chamfer of the copper bar can be adjusted according to the priority of the adjustment strategy>Adjusting conductor contact>Adjusting the phase separation, one or more adjustments of high priority may be selectedAnd (4) correcting strategies, for example, when the simulation model is corrected by selecting two strategies of adjusting the chamfering of the copper bar and adjusting the contact of the conductor, increasing the chamfering of the copper bar from 0 to 4mm and increasing the contact area of the conductor from 0cm2Increased to 20cm2. In another exemplary embodiment, when the difference is small, the phase distance is adjusted according to the adjustment strategy priority>Adjusting copper bar chamfer>The conductor contact is adjusted, and one or more adjustment strategies with high priority can be selected for correction, for example, only the phase spacing is selected to be adjusted, and the phase spacing is increased from 125mm to 155mm, and the like.
Returning to step S103 according to the corrected simulation model, calculating the electric field and current density of the simulation model, and continuing to operate step S104 when the calculated electric field and/or current density is greater than the corresponding judgment threshold; and when the calculated electric field and the calculated current density are both smaller than or equal to the corresponding judgment threshold values, the subsequent steps are operated.
Step S105: and if the electric field and the current density are both smaller than or equal to the corresponding judgment threshold values, generating a configuration result of the conductive loop of the ring main unit according to the simulation model.
If the maximum electric field is less than or equal to the electric field judgment threshold value and the current density is less than or equal to the current density judgment threshold value, the simulation model can meet the actual working requirement; and further extracting attribute information such as the size and the distance of each conductor model and the setting position and the size of the partition plate from the simulation model, and taking the attribute information as a configuration result of the conductive loop of the ring main unit to provide a basis for the subsequent production of the ring main unit conductor.
As can be seen from the description of the above embodiment, in the ring main unit conductor configuration optimization method provided by the embodiment of the present invention, a simulation model is established, wherein the simulation model includes a partition model and at least 3 conductor models; carrying out meshing on the simulation model; selecting a target model from the simulation models after grid division; applying analog voltage and analog current on the target model to calculate the electric field and current density of the simulation model; if the electric field and/or the current density is larger than the corresponding judgment threshold, correcting the simulation model according to an adjustment strategy; wherein the adjustment strategy comprises one or more of adjusting the phase distance, adjusting the chamfer angle of the copper bar and adjusting the contact of the conductor; or if the electric field and the current density are both smaller than or equal to the corresponding judgment threshold values, generating a configuration result of the conductive loop of the ring main unit according to the simulation model. Quantitative analysis can be carried out on the electric field and the current density of the ring main unit through numerical calculation, so that the configuration mode of the ring main unit conductor is effectively optimized and adjusted, the electric field and the current density of the ring main unit are reduced, and the reliability is improved.
Through the above description of the method embodiments, those skilled in the art can clearly understand that the present invention can be implemented by software plus a necessary general hardware platform, and certainly can also be implemented by hardware, but the former is a better implementation mode in many cases. Based on such understanding, the technical solutions of the present invention may be embodied in the form of a software product, which is stored in a storage medium and includes instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the methods according to the embodiments of the present invention. And the aforementioned storage medium includes: various media that can store program codes, such as Read Only Memory (ROM), Random Access Memory (RAM), magnetic or optical disks, and so on.
Corresponding to the embodiment of the method for optimizing the conductor configuration of the ring main unit, the invention also provides a device for optimizing the conductor configuration of the ring main unit.
Referring to fig. 7, a schematic structural diagram of an apparatus for optimizing configuration of a conductive loop at a partition of a ring main unit according to an embodiment of the present invention is shown, where the apparatus includes:
the modeling module 11 is used for establishing a simulation model, wherein the simulation model comprises a partition plate model and at least 3 conductor models;
a meshing module 12, configured to perform meshing on the simulation model;
a calculation module 13, configured to select any one conductor model from the simulation models after the grid division as a target model; calculating the electric field and current density of a simulation model by simulating the voltage and the current on the target model;
a correction module 14, configured to correct the simulation model according to an adjustment strategy if the electric field and/or the current density is greater than a corresponding determination threshold; wherein the adjustment strategy comprises one or more of adjusting the phase distance, adjusting the chamfer angle of the copper bar and adjusting the contact of the conductor;
and the result generating module 15 is configured to generate a configuration result of the conductive loop of the ring main unit according to the simulation model if the electric field and the current density are both less than or equal to the corresponding judgment threshold values.
In order to improve the numerical calculation efficiency of the electric field and the current density, in a first implementation case, the mesh division module 12 is configured to obtain a historical fault record of the ring main unit, where the historical fault record includes a fault location and a fault frequency; setting the grid density of a simulation model corresponding to a fault position according to the fault frequency; and dividing the simulation model into a plurality of grids according to the grid density.
In a second implementation case, the mesh partitioning module 12 is configured to set a corresponding mesh density according to an edge radian of the simulation model; and dividing the edge of the simulation model into a plurality of grids according to the grid density.
In order to improve the correction efficiency of the simulation model, in the embodiment of the present invention, the correction module 14 is configured to set the priority of the adjustment strategy according to the difference between the electric field and/or the current density and the corresponding judgment threshold; and preferentially selecting an adjusting strategy with high priority to correct the simulation model according to the priority.
Referring to fig. 8, a schematic diagram of a hardware structure of a server for executing the method for optimizing configuration of a conductive loop at a partition of a ring main unit according to an embodiment of the present invention is shown in fig. 8, where the server includes:
one or more processors 810 and a memory 820, with one processor 810 being an example in FIG. 8.
The server for executing the ring main unit conductor configuration optimization method may further include: an input device 830 and an output device 840.
The processor 810, the memory 820, the input device 830, and the output device 840 may be connected by a bus or other means, such as the bus connection in fig. 8.
The memory 820 is used as a non-volatile computer readable storage medium, and can be used for storing non-volatile software programs, non-volatile computer executable programs, and modules, such as program instructions/modules corresponding to the processing method of list item operation in the embodiment of the present application. The processor 810 executes various functional applications and data processing of the server by running the nonvolatile software program, instructions and modules stored in the memory 820, that is, the ring main unit conductor configuration optimization method in the above method embodiments is implemented.
The memory 820 may include a program storage area and a data storage area, wherein the program storage area may store an operating system, an application program required for at least one function; the storage data area may store data created according to use of a processing device that plays video control, and the like. Further, the memory 820 may include high speed random access memory, and may also include non-volatile memory, such as at least one magnetic disk storage device, flash memory device, or other non-volatile solid state storage device. In some embodiments, memory 820 optionally includes memory located remotely from processor 810, which may be connected to a processing device that plays the video control over a network. Examples of such networks include, but are not limited to, the internet, intranets, local area networks, mobile communication networks, and combinations thereof.
The input device 830 may receive input numeric or character information and generate key signal inputs related to user settings and function control of the processing device playing the video control. The output device 840 may include a display device such as a display screen.
The one or more modules are stored in the memory 820, and when executed by the one or more processors 810, perform the ring main unit conductor configuration optimization method in any of the above-described method embodiments.
The product can execute the method provided by the embodiment of the application, and has the corresponding functional modules and beneficial effects of the execution method. For technical details that are not described in detail in this embodiment, reference may be made to the methods provided in the embodiments of the present application.
The foregoing is directed to embodiments of the present invention, and it is understood that various modifications and improvements can be made by those skilled in the art without departing from the spirit of the invention.
Claims (10)
1. A method for optimizing configuration of a conductive loop at a ring main unit partition plate is characterized by comprising the following steps:
establishing a simulation model, wherein the simulation model comprises a partition plate model and at least 3 conductor models;
carrying out meshing on the simulation model;
selecting any one conductor model from the simulation models subjected to grid division as a target model; applying analog voltage and analog current on the target model to calculate the electric field and current density of the simulation model;
if the electric field and/or the current density is larger than the corresponding judgment threshold, correcting the simulation model according to an adjustment strategy; wherein the adjustment strategy comprises one or more of adjusting the phase distance, adjusting the chamfer angle of the copper bar and adjusting the contact of the conductor;
and if the electric field and the current density are both smaller than or equal to the corresponding judgment threshold values, generating a configuration result of the conductive loop of the ring main unit according to the simulation model.
2. The method for optimizing the configuration of the conductive loop at the partition of the ring main unit according to claim 1, wherein the mesh division of the simulation model includes:
acquiring a historical fault record of the ring main unit, wherein the historical fault record comprises a fault position and a fault frequency;
setting the grid density of a simulation model corresponding to a fault position according to the fault frequency;
and dividing the simulation model into a plurality of grids according to the grid density.
3. The method for optimizing the configuration of the conductive loop at the partition of the ring main unit according to claim 1, wherein the mesh division of the simulation model includes:
setting corresponding grid density according to the edge radian of the simulation model;
and dividing the edge area of the simulation model into a plurality of grids according to the grid density.
4. The method for optimizing configuration of a conductive loop at a partition of a ring main unit according to claim 1, wherein the modifying the simulation model according to the adjustment strategy comprises:
setting the priority of an adjusting strategy according to the difference value between the electric field and/or the current density and the corresponding judgment threshold;
and preferentially selecting an adjusting strategy with high priority to correct the simulation model.
5. The method for optimizing configuration of a conductive loop at a partition of a ring main unit according to claim 1, wherein the target model is a conductor model at a middle position among the at least 3 conductor models, the simulated voltage value is 12000V, and the simulated current value is 630A.
6. The utility model provides a looped netowrk cabinet baffle department conductive loop configuration optimizing apparatus which characterized in that includes:
the modeling module is used for establishing a simulation model, wherein the simulation model comprises a partition plate model and at least 3 conductor models;
the meshing module is used for meshing the simulation model;
the calculation module is used for selecting any one conductor model from the simulation models subjected to grid division as a target model; calculating the electric field and current density of a simulation model by simulating the voltage and the current on the target model;
the correction module is used for correcting the simulation model according to an adjustment strategy if the electric field and/or the current density is larger than a corresponding judgment threshold; wherein the adjustment strategy comprises one or more of adjusting the phase distance, adjusting the chamfer angle of the copper bar and adjusting the contact of the conductor;
and the result generation module is used for generating a configuration result of the conductive loop of the ring main unit according to the simulation model if the electric field and the current density are both smaller than or equal to the corresponding judgment threshold values.
7. The device for optimizing configuration of conductive loop at ring main unit partition according to claim 6, wherein the mesh dividing module is configured to,
acquiring a historical fault record of the ring main unit, wherein the historical fault record comprises a fault position and a fault frequency;
setting the grid density of a simulation model corresponding to a fault position according to the fault frequency;
and dividing the simulation model into a plurality of grids according to the grid density.
8. The device for optimizing configuration of conductive loop at ring main unit partition according to claim 6, wherein the mesh dividing module is configured to,
setting corresponding grid density according to the edge radian of the simulation model;
and dividing the edge of the simulation model into a plurality of grids according to the grid density.
9. The device for optimizing configuration of a conductive loop at a partition of a ring main unit according to claim 6, wherein the modification module is configured to,
setting the priority of an adjusting strategy according to the difference value between the electric field and/or the current density and the corresponding judgment threshold;
and preferentially selecting an adjusting strategy with high priority to correct the simulation model according to the priority.
10. A server, comprising at least one processor; and the number of the first and second groups,
a memory communicatively coupled to the at least one processor; wherein the content of the first and second substances,
the memory stores instructions executable by the one processor to cause the at least one processor to:
establishing a simulation model, wherein the simulation model comprises a partition plate model and at least 3 conductor models;
carrying out meshing on the simulation model;
selecting any one conductor model from the simulation models subjected to grid division as a target model; applying analog voltage and analog current on the target model to calculate the electric field and current density of the simulation model;
if the electric field and/or the current density is larger than the corresponding judgment threshold, correcting the simulation model according to an adjustment strategy; wherein the adjustment strategy comprises one or more of adjusting the phase distance, adjusting the chamfer angle of the copper bar and adjusting the contact of the conductor;
and if the electric field and the current density are both smaller than or equal to the corresponding judgment threshold values, generating a configuration result of the conductive loop of the ring main unit according to the simulation model.
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| CN104217061A (en) * | 2014-07-08 | 2014-12-17 | 国家电网公司 | Temperature field simulation design method for low-voltage distribution cabinet |
| CN104751246A (en) * | 2015-04-09 | 2015-07-01 | 国网宁夏电力公司经济技术研究院 | Active distribution network planning method based on stochastic chance constraint |
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