CN106835285B - Sulphur germanium gallium lead compound, sulphur germanium gallium leading crystal and its preparation method and application - Google Patents
Sulphur germanium gallium lead compound, sulphur germanium gallium leading crystal and its preparation method and application Download PDFInfo
- Publication number
- CN106835285B CN106835285B CN201710113036.4A CN201710113036A CN106835285B CN 106835285 B CN106835285 B CN 106835285B CN 201710113036 A CN201710113036 A CN 201710113036A CN 106835285 B CN106835285 B CN 106835285B
- Authority
- CN
- China
- Prior art keywords
- crystal
- germanium gallium
- sulphur
- sulphur germanium
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G21/00—Compounds of lead
- C01G21/006—Compounds containing, besides lead, two or more other elements, with the exception of oxygen or hydrogen
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/35—Non-linear optics
- G02F1/355—Non-linear optics characterised by the materials used
- G02F1/3551—Crystals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nonlinear Science (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of sulphur germanium gallium lead compound, the chemical formula of the sulphur germanium gallium lead compound is PbGa2GeS6.The invention also discloses the preparation methods of the sulphur germanium gallium lead compound.Further, the invention also discloses a kind of sulphur germanium gallium leading crystal, the chemical formula of the crystal is PbGa2GeS6.The invention also discloses the preparation methods and purposes of the sulphur germanium gallium leading crystal.The advantages that growing crystals of sulphur germanium gallium lead infrared nonlinear optical crystal of the invention easily grow up and without packages, have the speed of growth very fast, at low cost, are easy to get larger size crystal；Sulphur germanium gallium lead infrared nonlinear optical crystal obtained has many advantages, such as than wider infrared light transmission wave band, good mechanical property, easy to process and preservation；The sulphur germanium gallium leading crystal can be used for making infrared laser frequency conversion device.
Description
Technical field
The present invention relates to field of inorganic materials, and in particular to sulphur germanium gallium lead compound and preparation method thereof, sulphur germanium gallium lead are red
Outer nonlinear optical crystal and its preparation method and application.
Background technique
Second-order non-linear optical crystal be it is a kind of combine closely with laser technology, important photoelectric functional material, such
Crystal can realize the tune to commodity laser frequency by nonlinear effects such as frequency multiplication, difference frequency and frequency and optical parametric oscillators
Section generates new laser source, and then greatly expands the application range of laser.It, can be by Nd such as using suitable frequency-doubling crystal:
YAG (output wavelength 1064nm) laser freuqency doubling, generation wavelength are the laser of 532nm；2.1 μm of laser can be with after frequency multiplication
The laser that generation wavelength is 1.05 μm.
Currently, a series of outstanding nonlinear optical crystals are advantageously, it has been found that include KBBF in Uv and visible light wave band
(KBe2BO3F2)、BBO(β-BaB2O4)、LBO(LiB3O5)、CBO(CsB3O5)、KDP(KH2PO4) and KTP (KTiOPO4) etc., it
Had been obtained in terms of generating new Uv and visible light wave band of laser and be widely applied and can satisfy various uses and want
It asks.However, the research to infrared band nonlinear optical crystal is still relatively deficient, crystal that can be practical only has ZGP
(ZnGeP2)、AGS(AgGaS2) and AGSe (AgGaSe2) etc. it is few in number several.There is also serious for these crystal simultaneously
Disadvantage, for example AGS and AGSe, there are big anisotropic thermal expansion, high quality large size crystal growth is difficult；In addition thermal conductivity
Low, stronger thermal gradient and thermal lensing effect can be generated in high power pump causes laser damage threshold extremely low, it is impossible to be used in
The output of high power infrared laser；ZGP crystal is the current optimal material for generating 3~5 μm of infrared lasers, however its crystal growth is different
It is often difficult, and there are inevitable, serious residual absorptions to make it must be using wavelength swashing greater than 2 μm near infrared region
Light is pumped.Disadvantage mentioned above is serious to limit the practical application of above-mentioned infrared crystal；In addition, in 8~12 μm of infrared bands
Still lack the nonlinear crystalline material of function admirable.And the novel infrared non-linear crystal BGS (BaGa found in the recent period4S7) and
BGSe(BaGa4Se7) it is still within the development in laboratory stage, specific actual use value needs further deeply with application band
Research.
Therefore, it explores excellent with being easy to grow, being machined good property, high laser damage threshold, infrared non-linear
Novel crystal seem especially urgent, and the research hotspot and one of difficult point in current nonlinear optical material field.
Summary of the invention
Present invention aim to address problem of the existing technology, a kind of sulphur germanium gallium lead compound and its preparation side are provided
Method, sulphur germanium gallium lead infrared nonlinear optical crystal and its preparation method and application.
In order to reach above-mentioned technical effect, the present invention takes following technical scheme:
The chemical formula of a kind of sulphur germanium gallium lead compound, the sulphur germanium gallium lead compound is PbGa2GeS6。
The preparation method of above-mentioned sulphur germanium gallium lead compound, comprising the following steps:
Pb substance, substance containing Ga, substance containing Ge and simple substance S ingredient and after mixing will be contained, be heated to 700~800 DEG C
High temperature solid state reaction is carried out, sulphur germanium gallium lead compound is obtained；
Pb:Ga:Ge:S elemental mole ratios are 1:2:1:6 in the substance containing Pb, substance containing Ga, substance containing Ge and simple substance S；
The substance containing Pb is lead simple substance or vulcanized lead；The substance containing Ga is gallium simple substance or trisulfides two gallium；It is described to contain
Ge substance is germanium simple substance or germanium disulfide.
Further technical solution according to the present invention, it is described to be heated to 700~800 DEG C of progress high temperature solid state reactions and be
Refer to:
Uniformly mixed material is fitted into quartz ampoule, 10 then are evacuated to quartz ampoule-3Pa simultaneously carries out fusing sealed knot；
The quartz ampoule of sealed knot is put into Muffle furnace, 700~800 DEG C is warming up to the rate of 30~50 DEG C/h, then keeps the temperature 96h, it is cold
But the sample after simultaneously grinding and sintering is taken out afterwards, obtains powdered PbGa2GeS6Compound.
A kind of sulphur germanium gallium leading crystal, it is characterised in that the chemical formula of the crystal is PbGa2GeS6, the crystal is infrared non-
Linear optical crystal, the crystal are non-centrosymmetric structure, belong to monoclinic system, space group Cc, cell parameter are as follows: α=γ=90 °, β=116.048 °,
Z=4.
The preparation method of above-mentioned sulphur germanium gallium leading crystal, it is the following steps are included: be placed in temperature for sulphur germanium gallium lead compound
Gradient is that sulphur germanium gallium lead is prepared using horizontal gradient condensation method or Bridgman-Stockbarger method in the crystal growing furnace of 5~10 DEG C/cm
Crystal.
Further technical solution according to the present invention, the horizontal gradient condensation method refer to powdered sulphur germanium gallium leaded
After closing the enclosed silica crucible of object, it is put into horizontal crystal growth furnace；After being heated to compound melts and keeping 24~72h, keep
Silica crucible is motionless, controls slow cooling with the mobile thermal field of the speed of 5~10mm/d, to crystal growth after, with 10~30
DEG C/h rate of temperature fall is down to room temperature, obtain orange transparent sulphur germanium gallium leading crystal.
Further technical solution according to the present invention, the Bridgman-Stockbarger method refer to powdered sulphur germanium gallium lead compound
After enclosed silica crucible, it is put into crystal growing furnace；Compound melts are to slowly warm up to, be completely melt and keep 24 to powder~
After 72h, silica crucible is vertically declined with the speed of 0.3~2.0mm/h, carries out sulphur germanium gallium leading crystal during crucible decline
Growth, to crystal growth after room temperature is down to 10~30 DEG C/h rate of temperature fall, growth cycle is 10~30d.
Above-mentioned sulphur germanium gallium leading crystal is used to prepare infrared laser frequency conversion device.
It will be described in detail the present invention below.
In the present invention, chemical formula PbGa2GeS6Sulphur germanium gallium lead compound, preparation related chemistry reaction equation include:
The PbGa2GeS6Compound can successfully be prepared by following chemical equations:
(1)PbS+2Ga+GeS2+ 3S=PbGa2GeS6；
(2) PbS+2Ga+Ge+5S=PbGa2GeS6；
(3) Pb+2Ga+Ge+6S=PbGa2GeS6；
(4)Pb+2Ga+GeS2+ 4S=PbGa2GeS6；
(5)PbS+Ga2S3+GeS2=PbGa2GeS6；
(6)PbS+Ga2S3+ Ge+2S=PbGa2GeS6；
(7)Pb+Ga2S3+ Ge+3S=PbGa2GeS6；
(8)Pb+Ga2S3+GeS2+ S=PbGa2GeS6；
The crystal structure of the sulphur germanium gallium lead compound is as shown in Figure 1, be a kind of three-dimensional frame structure: Ga and Ge are with 2:1
One tetrahedral coordination of the ratio unity of possession position, these (Ga/Ge) S4The mutual concurrent of tetrahedron connects to form three-dimensional box
Frame, Pb ion are located in the gap in frame.
The present invention prepares sulphur germanium gallium leading crystal using horizontal gradient condensation method or Bridgman-Stockbarger method and can get having a size of cm
The PbGa of grade2GeS6Infrared nonlinear optical crystal；Using larger-sized crucible, while extending growth cycle, then can get phase
Answer larger size PbGa2GeS6Infrared nonlinear optical crystal.
After obtaining high quality large size crystal, the crystal of growth can be carried out according to the crystallographic characteristics of the crystal
Orientation.It later, can be by required angle, thickness and sectional dimension sliced crystal；Finally simultaneously by the light pass surface polishing of quartz crystal device
Plated film completes the preparation of the crystal infrared laser frequency conversion device.PbGa2GeS6Crystal has physical and chemical performance stable, mechanical
Performance is good, is not easy the advantages that deliquescing, easy to process and preservation；The present invention furthermore provides PbGa2GeS6Infrared non-linear optics
The purposes of crystal, the PbGa2GeS6Crystal is used to prepare infrared laser frequency conversion device, which includes will be at least a branch of incident sharp
Light passes through at least one piece of PbGa2GeS6At least a branch of frequency is generated after crystal different from the device of the radiant output of incident laser.
Compared with prior art, the present invention have it is below the utility model has the advantages that
Effect of the invention is that providing a kind of chemical formula is PbGa2GeS6Novel infrared nonlinear optical crystal and its
Preparation method and purposes.It easily grows up and without package, has in the growing crystals of the sulphur germanium gallium lead infrared nonlinear optical crystal
The advantages that speed of growth is very fast, at low cost, is easy to get larger size crystal；Sulphur germanium gallium lead infrared non-linear optics obtained
Crystal has many advantages, such as than wider infrared light transmission wave band, good mechanical property, easy to process and preservation；The sulphur germanium gallium leading crystal can
For making infrared laser frequency conversion device.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of sulphur germanium gallium lead infrared nonlinear optical crystal prepared by the present invention.
Fig. 2 is the PbGa2GeS6Infrared nonlinear optical crystal tests (Experimental) and fitting
(Simulated) x-ray diffractogram of powder spectrum control.
Fig. 3 is former using a kind of work of typical infrared nonlinear optical device made of sulphur germanium gallium leading crystal of the present invention
Reason figure.
Specific embodiment
Below with reference to the embodiment of the present invention, the invention will be further elaborated.
Embodiment 1
Using PbS+Ga2S3+ Ge+2S=PbGa2GeS6Reaction equation prepares sulphur germanium gallium leaded with high-temperature solid phase reaction method and closes
Object；
The PbS is 11.964 grams, the Ga2S3It is 11.782 grams, the Ge is 3.631 grams, and the S is 3.207 grams；
That is PbS:Ga2S3: Ge:S=0.05mol:0.05mol:0.05mol:0.10mol；
Concrete operation step is to weigh reagent respectively by above-mentioned dosage in glove box, place them into mortar, mixing
And grind, it is then charged into the quartz ampoule of Φ 19mm × 25mm, is evacuated to 10-3Quartz ampoule is melted with oxyhydrogen flame after Pa and is sealed
Dress, is put into Muffle furnace, rises to 700 DEG C with the heating rate of 40 DEG C/h, keeps the temperature 96h, take out sample after cooling, be put into mortar
In smash grinding to pieces and obtain powdered PbGa2GeS6Compound.
Embodiment 2
Using PbS+2Ga+Ge+5S=PbGa2GeS6Reaction equation prepares sulphur germanium gallium lead compound with high-temperature solid phase reaction method；
The PbS is 11.964 grams, and the Ga is 6.972 grams, and the Ge is 3.631 grams, and the S is 8.017 grams；I.e.
PbS:Ga:Ge:S=0.05mol:0.10mol:0.05mol:0.25mol；
Concrete operation step is to weigh reagent respectively by above-mentioned dosage in glove box, they are mixed, be then charged into Φ
In the quartz ampoule of 19mm × 25mm, it is evacuated to 10-3Quartz ampoule is melted with oxyhydrogen flame after Pa and is encapsulated, is put into Muffle furnace, with
The heating rate of 30 DEG C/h rises to 800 DEG C, keeps the temperature 96h, takes out sample after cooling, is put into mortar and smashs grinding to pieces and obtain powder
Shape PbGa2GeS6Compound.
Embodiment 3
Using Pb+2Ga+Ge+6S=PbGa2GeS6Reaction equation prepares sulphur germanium gallium lead compound with high-temperature solid phase reaction method；
The Pb is 10.36 grams, and the Ga is 6.972 grams, and the Ge is 3.631 grams, and the S is 9.620 grams；That is Pb:
Ga:Ge:S=0.05mol:0.10mol:0.05mol:0.30mol；
Its concrete operation step is to weigh reagent respectively by above-mentioned dosage in glove box, be loaded into Φ 19mm ×
In the quartz ampoule of 25mm, it is evacuated to 10-3Quartz ampoule is melted with flame after Pa and is encapsulated, is put into Muffle furnace, is slowly increased to 800
DEG C, heating rate be 30 DEG C/h, keep the temperature 96h, take out after cooling, be put into mortar smash to pieces grinding obtain it is powdered
PbGa2GeS6Compound.
Embodiment 4
Using PbS+Ga2S3+GeS2=PbGa2GeS6Reaction equation prepares sulphur germanium gallium lead compound with high-temperature solid phase reaction method；
The PbS is 11.964 grams, the Ga2S3It is 11.782 grams, the GeS2It is 6.837 grams；That is PbS:Ga2S3:
GeS2=0.05mol:0.05mol:0.05mol；
Concrete operation step is to weigh reagent respectively by above-mentioned dosage in glove box, place them into mortar, mixing
And grind, it is then charged into the quartz ampoule of Φ 19mm × 25mm, is evacuated to 10-3Quartz ampoule is melted with oxyhydrogen flame after Pa and is sealed
Dress, is put into Muffle furnace, rises to 700 DEG C with the heating rate of 50 DEG C/h, keeps the temperature 96h, takes out sample after cooling and grinds
To powdered PbGa2GeS6Compound.
Embodiment 5
Sulphur germanium gallium leading crystal is prepared using horizontal gradient condensation method:
By PbGa obtained in embodiment 1 to 42GeS6Powder is fitted into Φ 16mm × 20mm silica crucible, is evacuated to
10-3After Pa, (temperature gradient is 5~10 DEG C/cm) is packaged and placed in horizontal growth furnace with oxyhydrogen flame, being slowly increased to 900 DEG C makes
After raw material is completely melt and keeps 24~72h, with the mobile thermal field of the speed of 5~10mm/d, to crystal growth after, with 10~
30 DEG C/h rate of temperature fall is cooled to room temperature, obtains orange transparent PbGa2GeS6Crystal.
Embodiment 6
Sulphur germanium gallium leading crystal is prepared using Bridgman-Stockbarger method:
By PbGa obtained in embodiment 1 to 42GeS6Powder is fitted into Φ 16mm × 20mm silica crucible, is evacuated to
10-3It after Pa, is packaged and placed in crystal growing apparatus with oxyhydrogen flame, being slowly increased to 900 DEG C is completely melt raw material and keeps 24
After~72h, silica crucible is vertically declined with the speed of 0.3~2.0mm/h, carries out PbGa during crucible decline2GeS6It is infrared
Nonlinear optical crystal is grown, and after crystal growth, is cooled to room temperature with the rate of 10~30 DEG C/h, is obtained orange transparent
PbGa2GeS6Crystal.
After tested, PbGa prepared by above-described embodiment 5 and 62GeS6Nonlinear optical crystal has non-centrosymmetry knot
Structure belongs to monoclinic system, space group Cc, cell parameter are as follows:
α=γ=90 °, β=116.048 °,Z=4；The crystal has infrared powder SHG effect；Fig. 1 is this
PbGa2GeS6The structural schematic diagram of infrared nonlinear optical crystal is a kind of three-dimensional frame structure: Ga and Ge is total with the ratio of 2:1
With the position for occupying a tetrahedral coordination, these (Ga/Ge) S4The mutual concurrent of tetrahedron connects to form three-dimensional framework, Pb ion
In the gap in frame.Fig. 2 is the PbGa2GeS6Infrared nonlinear optical crystal tests (Experimental) and fitting
(Simulated) x-ray diffractogram of powder compose control.
Embodiment 7
By the resulting PbGa of embodiment 5 and 62GeS6Crystal be oriented, cut, polishing and plated film after, be placed on 3 institute of attached drawing
At position of the showing device marked as 4, at room temperature, with the Ho:Tm:Cr:YAG laser light source for adjusting Q, incident wavelength is
The infrared light of 2090nm, output wavelength are the frequency doubled light of 1045nm.
Attached drawing 3 is using PbGa of the present invention2GeS6A kind of typical infrared non-linear made of infrared nonlinear optical crystal
The working principle diagram of optical device, wherein 1 is infrared laser；2 represent the laser beam that will be incident on crystal of 1 generation；3
It is the mirror for having plated film (mirror can be through incident laser 2, signal light and ideler frequency light that total reflection crystal generates)；4 be through
The PbGa for meeting laser wavelength of incidence phase-matching condition after crossing crystal post-processing and optical manufacturing2GeS6Crystal；5 be plating
The mirror of film (mirror can be totally reflected incident laser 2 partially through the signal light and ideler frequency light of crystal generation)；6 and 7 be to obtain
The required laser beam obtained.
Although reference be made herein to invention has been described for explanatory embodiment of the invention, and above-described embodiment is only this hair
Bright preferable embodiment, embodiment of the present invention are not limited by the above embodiments, it should be appreciated that those skilled in the art
Member can be designed that a lot of other modification and implementations, these modifications and implementations will fall in principle disclosed in the present application
Within scope and spirit.
Claims (1)
1. a kind of preparation method of sulphur germanium gallium leading crystal, it is characterised in that:
The chemical formula of the sulphur germanium gallium leading crystal is PbGa2GeS6, the crystal is infrared nonlinear optical crystal, the crystal
For non-centrosymmetric structure, belong to monoclinic system, space group Cc, cell parameter are as follows: α=γ=90 °, β=116.048 °,Z=4；
Sulphur germanium gallium lead compound is placed in the crystal growing furnace that temperature gradient is 5~10 DEG C/cm, utilizes horizontal gradient condensation method
Or sulphur germanium gallium leading crystal is prepared in Bridgman-Stockbarger method；
The horizontal gradient condensation method refers to after the enclosed silica crucible of powdered sulphur germanium gallium lead compound, and it is raw to be put into level crystal
In long furnace；After being heated to compound melts and keeping 24~72h, with the mobile thermal field of the speed of 5~10mm/d, to crystal growth knot
Shu Hou is down to room temperature with 10~30 DEG C/h rate of temperature fall, obtains orange transparent sulphur germanium gallium leading crystal；
The Bridgman-Stockbarger method refers to after the enclosed silica crucible of powdered sulphur germanium gallium lead compound, is put into crystal growing furnace；
Compound melts are to slowly warm up to, after powder is completely melt and keeps 24~72h, silica crucible is with the speed of 0.3~2.0mm/h
The vertical decline of degree carries out the growth of sulphur germanium gallium leading crystal during crucible decline, to crystal growth after with 10~30 DEG C/
H rate of temperature fall is down to room temperature, and growth cycle is 10~30d；
The chemical formula of the sulphur germanium gallium lead compound is PbGa2GeS6；
The sulphur germanium gallium lead compound is prepared via a method which:
Pb substance, substance containing Ga, substance containing Ge and simple substance S ingredient and after mixing will be contained, be heated to 700~800 DEG C of progress
High temperature solid state reaction obtains sulphur germanium gallium lead compound；
Pb:Ga:Ge:S elemental mole ratios are 1:2:1:6 in the substance containing Pb, substance containing Ga, substance containing Ge and simple substance S；
The substance containing Pb is lead simple substance or vulcanized lead；The substance containing Ga is gallium simple substance or trisulfides two gallium；The object containing Ge
Matter is germanium simple substance or germanium disulfide；
It is described to be heated to 700~800 DEG C of progress high temperature solid state reactions and be:
Uniformly mixed material is fitted into quartz ampoule, 10 then are evacuated to quartz ampoule-3Pa simultaneously carries out fusing sealed knot；It will envelope
The quartz ampoule of knot is put into Muffle furnace, is warming up to 700~800 DEG C with the rate of 30~50 DEG C/h, 96h is then kept the temperature, after cooling
Sample after taking out simultaneously grinding and sintering, obtains powdered PbGa2GeS6Compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710113036.4A CN106835285B (en) | 2017-02-28 | 2017-02-28 | Sulphur germanium gallium lead compound, sulphur germanium gallium leading crystal and its preparation method and application |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710113036.4A CN106835285B (en) | 2017-02-28 | 2017-02-28 | Sulphur germanium gallium lead compound, sulphur germanium gallium leading crystal and its preparation method and application |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106835285A CN106835285A (en) | 2017-06-13 |
| CN106835285B true CN106835285B (en) | 2019-06-21 |
Family
ID=59137631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710113036.4A Active CN106835285B (en) | 2017-02-28 | 2017-02-28 | Sulphur germanium gallium lead compound, sulphur germanium gallium leading crystal and its preparation method and application |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106835285B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111607822A (en) * | 2020-05-28 | 2020-09-01 | 河北大学 | Intermediate infrared nonlinear optical crystal lead gallium germanate, application thereof and intermediate infrared nonlinear laser system |
| CN115893478B (en) * | 2022-11-14 | 2024-03-08 | 滨州医学院 | Bromine sulfur germanium lead compound and preparation method and application thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102383196A (en) * | 2011-03-17 | 2012-03-21 | 中国科学院福建物质结构研究所 | Novel non-linear optical crystal gallium germanium barium sulfide, and growing method and application thereof |
| CN103866391A (en) * | 2014-03-21 | 2014-06-18 | 中国科学院福建物质结构研究所 | Infrared nonlinear optical powder and mono-crystal selenium-germanium-gallium-lead |
-
2017
- 2017-02-28 CN CN201710113036.4A patent/CN106835285B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102383196A (en) * | 2011-03-17 | 2012-03-21 | 中国科学院福建物质结构研究所 | Novel non-linear optical crystal gallium germanium barium sulfide, and growing method and application thereof |
| CN103866391A (en) * | 2014-03-21 | 2014-06-18 | 中国科学院福建物质结构研究所 | Infrared nonlinear optical powder and mono-crystal selenium-germanium-gallium-lead |
Non-Patent Citations (1)
| Title |
|---|
| PbGa2MSe6 (M = Si, Ge): Two Exceptional Infrared Nonlinear Optical Crystals;Zhong-Zhen Luo 等;《Chem. Mater.》;20150106;第27卷;第914？922页 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106835285A (en) | 2017-06-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101767778B (en) | BaCa4Se7 compound, BaCa4Se7 nonlinear optical crystal, preparation method and application | |
| CN107021462A (en) | Selenium gallium zinc barium compound, selenium gallium zinc barium infrared nonlinear optical crystal and its production and use | |
| CN102976287B (en) | BaGa2GeSe6 compound, BaGa2GeSe6 non-linear optical crystal and their preparation methods and use | |
| CN102838093B (en) | LiGaGe2Se6 compound, LiGaGe2Se6 nonlinear optical crystals, and preparation method and application thereof | |
| CN103288058B (en) | Li2In2GeSe6 compound and Li2In2GeSe6 nonlinear optical crystal as well as preparation methods and applications thereof | |
| CN103628136B (en) | Compound boron phosphoric acid rubidium is plumbous and boron phosphoric acid rubidium lead nonlinear optical crystal and preparation method and purposes | |
| CN106757362A (en) | Selenium germanium cadmium strontium compound and preparation method thereof, selenium germanium cadmium strontium crystal and its preparation method and application | |
| CN106629819A (en) | Compound SrCdGeS4 and preparation method thereof, and infrared nonlinear optical crystal as well as preparation method and application thereof | |
| CN103290480B (en) | Li 2in 2siS 6compound, Li 2in 2siS 6non-linear optic crystal and method for making and purposes | |
| CN105113005A (en) | BaHgSe2 nonlinear optical crystal, and preparation method and use thereof | |
| CN103058266A (en) | BaGa2GeS6 compound, BaGa2GeS6 nonlinear optical crystal, and preparation method and application thereof | |
| CN103290478B (en) | Li 2in 2geS 6compound, Li 2in 2geS 6non-linear optic crystal and method for making and purposes | |
| CN106629632B (en) | Selenium gallium cadmium barium compound and preparation method thereof, selenium gallium cadmium crystal of barium and its preparation method and application | |
| US11932965B2 (en) | Nonlinear optical crystal, method for preparing the same and application thereof | |
| CN106835285B (en) | Sulphur germanium gallium lead compound, sulphur germanium gallium leading crystal and its preparation method and application | |
| CN103060917B (en) | BaGa 2siS 6compound, BaGa 2siS 6non-linear optic crystal and method for making and purposes | |
| CN105350082B (en) | A kind of Na2In2GeSe6Nonlinear optical crystal and preparation method and purposes | |
| CN103030146B (en) | BaGa2SiSe6 compound, BaGa2SiSe6 nonlinear optical crystal and preparation method and application | |
| CN107217302B (en) | Selenium antimony gallium barium compound, selenium antimony gallium barium infrared nonlinear optical crystal and its preparation method and application | |
| CN103290479B (en) | Li 2in 2siSe 6compound, Li 2in 2siSe 6non-linear optic crystal and method for making and purposes | |
| CN104649271A (en) | KYSiS4 compound, KYSiS4 nonlinear optical crystal, preparation method and application | |
| CN105543971B (en) | A kind of AgZnPS4Nonlinear optical crystal and preparation method thereof and device for non-linear optical | |
| CN105543970B (en) | Li7Cd4.5Ge4Se16Nonlinear optical crystal and preparation method and purposes | |
| CN105753041B (en) | A kind of LiGaGe2S6Compound and LiGaGe2S6Nonlinear optical crystal and preparation method and application | |
| CN105063756A (en) | KYGeS4 non-linear optical crystal and growth method and application thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |