CN106835279A - A kind of thermograde control device and control method for sapphire crystallization furnace - Google Patents
A kind of thermograde control device and control method for sapphire crystallization furnace Download PDFInfo
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- CN106835279A CN106835279A CN201710088402.5A CN201710088402A CN106835279A CN 106835279 A CN106835279 A CN 106835279A CN 201710088402 A CN201710088402 A CN 201710088402A CN 106835279 A CN106835279 A CN 106835279A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
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- Crystallography & Structural Chemistry (AREA)
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention discloses a kind of thermograde control device and control method for sapphire crystallization furnace, sapphire crystallization furnace thermograde needed for each stage sets up a material, seeding, brilliant, cooling Controlling model long, the model is without manually participating in, reduce the requirement to people, ensure that the homogeneity of product quality, the advantages of ensure that the low cost of large-scale production, shortening crystal growth cycles；And boundary condition change can be correct for the adverse effect of growth conditions according to requirement of each stage to appropriate temperature gradient during sapphire crystallization, it is dropped to normal temperature within the most short time, while ensureing that crystal quality is good.
Description
Technical field
The present invention relates to the thermograde control of a kind of sapphire preparation technology, especially kyropoulos sapphire crystallization furnace
Technical field.
Background technology
Sapphire is due to (2045 DEG C) high with the velocity of sound high, high temperature resistant, anticorrosive, high rigidity, high light transmittance, fusing point
Etc. good machinery, chemical property feature, and largely it is used in window device, infrared facility, photomask materials and semiconductor
Substrate industry.Current super brightness is white/and the quality of blue-ray LED depends on the material quality of the luminescent layers such as gallium nitride epitaxy (GaN),
And quality that gallium nitride such as builds at the 4th generation semiconductor is then closely bound up with the sapphire substrate quality for being used.Separately currently used for hand
The market capacity of cover plate is risen with more than 50% growth rate, and market is huge.Although current sapphire growth method is various
Various kinds, but kyropoulos (Ky methods) are minimum defect, the process of most easy bigization of size at present.
The kyropoulos sapphire single crystal growth furnace for wherein using in the art, is in high temperature furnace, using qualified seed
Crystalline substance, adopts and slowly bears the sapphire monocrystal with complete structure from melt.Due to gradient rationally, in crystal growing process not
Contacted with sidewall of crucible, it is to avoid the generation of parasitic nucleation and contact stress, comparatively, the crystal defect that the method grows is few,
The sapphire crystal that kyropoulos grow is the production technology of the substrate and optical glass material being best suitable for.
Birdcage method traditional at present etc. controls crystalline substance using thermograde in the indirect methods such as voltage or power control thermal field
The growth conditions of body, but this control method does not account for the change of boundary condition during actual (tube) length crystalline substance, such as production process
The decay of middle resistance, damaged aging, fluctuation of factory service etc. of thermal insulation layer.Often occur viscous pot, cracking, bubble in process of production
Deng abnormal, it is impossible to ensure crystal quality.On the one hand production cost is increased, the requirement to factory service and thermal field is higher, is unfavorable for enterprise
The raising of industry benefit；On the other hand due to that cannot automatically adjust, experienced employee can only be leaned on to be had according to the phenomenon for occurring
The operation of limit, increases to go to human resources, is unfavorable for the reduction of cost and expands production on a large scale.
The content of the invention
Goal of the invention：It is an object of the invention to the thermograde needed for designing a kind of direct control sapphire production process
Technology, it is to avoid indirect control theory may cause growth conditions abnormal or even scrap.The method can be compressed each during crystalline substance long
Phases-time, eliminates influence of the change of boundary condition during crystalline substance long to high temperature crystal growth state, it is ensured that crystal is excellent
Good quality, it is possible to increase product yield, reduces production cost.
Technical scheme：Provided by the present invention for sapphire crystallization furnace thermograde control device technical scheme such as
Under：
The thermometric of temperature in a kind of thermograde control device for sapphire crystallization furnace, including crucible, measurement crucible
Instrument, the bottom heater for heating crucible bottom, the upper portion heater for heating crucible top, for heating crucible middle part
And the middle part heater between bottom heater and upper portion heater；The upper portion heater, middle part heater, bottom add
Hot device be used to adjust to crucible top, middle part, bottom each stage of sapphire crystallization process temperature control.
Beneficial effect：Relative to prior art, thermograde control device of the present invention it is maximum the characteristics of be：Set to earthenware
The heater of crucible various location, according to requirement of each stage to appropriate temperature gradient during sapphire crystallization, correct for side
Boundary's condition change makes it drop to normal temperature within the most short time adverse effect of growth conditions, while ensureing that crystal quality is good
It is good.
And provided by the present invention for sapphire crystallization furnace thermograde control device control method technical scheme such as
Under：
The control method of thermograde control device, sapphire crystallization furnace is after operation order is received according to set in advance
Heating, brilliant, cooling long, inflation procedure are run successively；
After starting heating schedule, then start heating schedule thermograde Controlling model；
After starting crystalline substance program long, start the thermograde Controlling model of crystal growing stage；
After crystalline substance long EP (end of program), start the thermograde Controlling model of cooling stage；
After cooling program end of run, into inflation procedure, until inflation operation is finished.
Beneficial effect：Using the thermograde control method of sapphire crystallization furnace of the present invention, according to sapphire crystallization process
In requirement of each stage to appropriate temperature gradient, improve crystal quality uniformity, reduce the requirement to people, solve to factory
Business, thermal field stability high request, save substantial amounts of manpower and materials, reduce production cost.
Further, the method for controlling heter temperature is：
1) the electric current I0 of HEATER FOR MEASURING, voltage V0, calculate each heater resistance, electric according in certain temperature range
Resistance rate and temperature linear approximate relationship, are calculated heater actual temperature T1；
2) according to each stage model in PLC, target temperature T2 is exported；
4) PLC, with T2 contrasts, carries out PID regulations according to the temperature T1 for calculating, and adjusts the voltage value V2 of output, until
T1 is equal to T2..
Further, the heating schedule thermograde Controlling model is：
Upper portion heater temperature in 10-20 hours at the uniform velocity rises to 2100-2150 DEG C；
Heater temperature in 10-20 hours in middle part at the uniform velocity rises to 2150-2250 DEG C；
Bottom heater temperature in 10-20 hours at the uniform velocity rises to 2200-2300 DEG C.
Further, the thermograde Controlling model of crystal growing stage, comprises the following steps：
1.1st, reduction of speed rate is set to reduction of speed under 0.1-0.5 DEG C/h, middle part heter temperature at a temperature of setting upper portion heater
Rate is set to 0.3-0.8 DEG C/h, bottom heaters temperature advances the speed and is set to 0.3-0.8 DEG C/h；
1.2nd, the desired temperature T2 for working as front upper part, middle part, bottom heater is calculated according to step 1.1 rate of temperature fall, and
With top, middle part, bottom heaters temperature actual value T1 contrasts, adjusted by PID, make T2 equal with T1.
Further, the thermograde Controlling model of cooling stage, comprises the following steps：
2.1st, the temperature on detection infrared radiation thermometer, transfers the temperature control speed of different temperatures section；
2.2nd, when infrared radiation thermometer measurement in-furnace temperature is 1900-700 DEG C, reduction of speed rate point at a temperature of upper portion heater
It is not：12-20℃/h；Reduction of speed rate is respectively at a temperature of the heater of middle part：35-50℃/h；The temperature drop of bottom heater
Speed is respectively：2-5℃/h；
2.3rd, when infrared radiation thermometer measurement in-furnace temperature is 700-300 DEG C, reduction of speed rate point at a temperature of upper portion heater
It is not：2-8℃/h；Reduction of speed rate is respectively at a temperature of the heater of middle part：2-8℃/h；Reduction of speed rate at a temperature of bottom heater
Respectively：5-10℃/h；
2.4th, when infrared radiation thermometer measurement in-furnace temperature is 300-70 DEG C, reduction of speed rate difference at a temperature of upper portion heater
For：2-5℃/h；Reduction of speed rate is respectively at a temperature of the heater of middle part：2-7℃/h；Reduction of speed rate point at a temperature of bottom heater
It is not：3-8℃/h.
Further, PLC is according to control heter temperature model cootrol upper portion heater, middle part heater, bottom-heated
The actual temperature of device.
Further, the inflation procedure is as follows：
3.1st, after inflation procedure 20-50 hours is entered, toward stove in applying argon gas to 0.2-0.35mpa；
3.2nd, after step 3.1 end of run 10-20 hours, toward stove in applying argon gas to 0.5-0.7mpa；
3.3rd, after step 3.2 end of run 5-20 hours, direct blow-on.
Brief description of the drawings
Fig. 1 is the thermograde control technology implementation process principle schematic of sapphire crystallization furnace of the present invention；
Fig. 2 thermograde control technology structural representation of sapphire crystallization furnace of the present invention.
Specific embodiment
Technical solution of the present invention is described in detail below, but protection scope of the present invention is not limited to the implementation
Example.
Embodiment 1：
1) sapphire crystallization furnace runs heating schedule after operation order is received；
2) in the heating schedule operation phase, PLC transfers heating schedule Temperature Control Model, makes upper, middle and lower heater actual value
T1 temperature in 10 hours at the uniform velocity rises setting value T2 to 2100 DEG C, 2150 DEG C, 2200 DEG C, so that material as early as possible；
3) system detectio starts the thermograde Controlling model of crystal growing stage to after seeding program；PLC transfers crystalline substance program long
Temperature Control Model, reduction of speed rate changes 0.1 DEG C/h, 0.3 DEG C/h at a temperature of being respectively provided with middle heater；Bottom temp increases
Speed is set to 0.3 DEG C/h；PLC transfers corresponding rate of temperature fall according to growth rate state, to control growth conditions；PLC according to
Rate of temperature fall calculates current desired temperature T2, and compares with the heter temperature actual value T1 for calculating, and is adjusted by PID,
Make both equal；
4) after crystalline substance program end of run long, automatically into cooling program, PLC transfers infrared radiation thermometer survey to long crystal furnace system
Numerical quantity, judges for condition subsequent；
5) when infrared radiation thermometer measures in-furnace temperature scope at 1900-700 DEG C, reduction of speed at a temperature of upper, middle and lower heater
Rate is respectively：12℃/h,35℃/h,2℃/h；LC calculates current desired temperature T2 according to rate of temperature fall, and with calculate
Heter temperature actual value T1 compares, and is adjusted by PID, makes both equal；
6) when infrared radiation thermometer measures in-furnace temperature scope at 700-300 DEG C, reduction of speed at a temperature of upper, middle and lower heater
Rate is respectively：2℃/h,2℃/h,5℃/h；LC calculates current desired temperature T2 according to rate of temperature fall, and with it is calculating plus
Hot device temperature actual value T1 compares, and is adjusted by PID, makes both equal；
7) reduction of speed rate point at a temperature of being 300-70 DEG C, upper, middle and lower heater in infrared radiation thermometer measurement in-furnace temperature scope
It is not：2℃/h,2℃/h,3℃/h；LC calculates current desired temperature T2 according to rate of temperature fall, and with the heater for calculating
Temperature actual value T1 compares, and is adjusted by PID, makes both equal；
8) system detectio is directly entered inflation procedure to after cooling program end of run, until inflation operation is finished；
The thermograde control technology of this set sapphire crystallization furnace, obtains good economic effect, its field personnel
Quantity reduces 25%, and crystal bottom cracking rate is reduced to 8%, and crystal yields is up to more than 97%, and rear end detection dislocation is close
Degree is less than 300, and crystal mass is far above level of the same trade.
Embodiment 2：
1) sapphire crystallization furnace runs heating schedule after operation order is received；
2) in the heating schedule operation phase, PLC transfers heating schedule Temperature Control Model, makes upper, middle and lower heater actual value
T1 temperature in 20 hours at the uniform velocity rises setting value T2 to 2150 DEG C, 2250 DEG C, 2300 DEG C, so that material as early as possible；
3) system detectio starts the thermograde Controlling model of crystal growing stage to after seeding program；PLC transfers crystalline substance program long
Temperature Control Model, reduction of speed rate changes 0.5 DEG C/h, 0.8 DEG C/h at a temperature of being respectively provided with middle heater；Bottom temp increases
Speed is set to 0.8 DEG C/h；PLC transfers corresponding rate of temperature fall according to growth rate state, to control growth conditions；PLC according to
Rate of temperature fall calculates current desired temperature T2, and compares with the heter temperature actual value T1 for calculating, and is adjusted by PID,
Make both equal；
4) after crystalline substance program end of run long, automatically into cooling program, PLC transfers infrared radiation thermometer survey to long crystal furnace system
Numerical quantity, judges for condition subsequent；
5) in-furnace temperature is measured in 1900-700 DEG C in infrared radiation thermometer, reduction of speed rate is divided at a temperature of upper, middle and lower heater
It is not：20℃/h,50℃/h,5℃/h；LC calculates current desired temperature T2 according to rate of temperature fall, and with the heating for calculating
Device temperature actual value T1 compares, and is adjusted by PID, makes both equal；
6) in infrared radiation thermometer measurement in-furnace temperature in the range of 700-300 DEG C, reduction of speed at a temperature of upper, middle and lower heater
Rate is respectively：8℃/h,8℃/h,10℃/h；LC calculates current desired temperature T2 according to rate of temperature fall, and with it is calculating plus
Hot device temperature actual value T1 compares, and is adjusted by PID, makes both equal；
7) in infrared radiation thermometer measurement in-furnace temperature in the range of 300-70 DEG C, reduction of speed rate at a temperature of upper, middle and lower heater
Respectively：5℃/h,7℃/h,8℃/h；LC calculates current desired temperature T2 according to rate of temperature fall, and with the heating for calculating
Device temperature actual value T1 compares, and is adjusted by PID, makes both equal；
8) system detectio is directly entered inflation procedure to after cooling program end of run, until inflation operation is finished；
The thermograde control technology of this set sapphire crystallization furnace, obtains good economic effect, its field personnel
Quantity reduces 30%, and crystal bottom cracking rate is reduced to 15%, and crystal yields is up to more than 95%.The crystal position of institute's output
Dislocation density is less than 400, and quality obtains the highly recognition of client.
Embodiment 3：
1) sapphire crystallization furnace runs heating schedule after operation order is received；
2) in the heating schedule operation phase, PLC transfers heating schedule Temperature Control Model, makes upper, middle and lower heater actual value
T1 temperature in 15 hours at the uniform velocity rises setting value T2 to 2130 DEG C, 2230 DEG C, 2270 DEG C, so that material as early as possible；
3) system detectio starts the thermograde Controlling model of crystal growing stage to after seeding program；PLC transfers crystalline substance program long
Temperature Control Model, reduction of speed rate changes 0.4 DEG C/h, 0.6 DEG C/h at a temperature of being respectively provided with middle heater；Bottom temp increases
Speed is set to 0.7 DEG C/h；PLC transfers corresponding rate of temperature fall according to growth rate state, to control growth conditions；PLC according to
Rate of temperature fall calculates current desired temperature T2, and compares with the heter temperature actual value T1 for calculating, and is adjusted by PID,
Make both equal；
4) after crystalline substance program end of run long, automatically into cooling program, PLC transfers infrared radiation thermometer survey to long crystal furnace system
Numerical quantity, judges for condition subsequent；
5) when infrared radiation thermometer measures in-furnace temperature in the range of 1900-700 DEG C, the temperature drop of upper, middle and lower heater
Speed is respectively：15℃/h,47℃/h,4℃/h；LC calculates current desired temperature T2 according to rate of temperature fall, and with calculating
Heter temperature actual value T1 compare, by PID adjust, make both equal；
6) when infrared radiation thermometer measures in-furnace temperature in the range of 700-300 DEG C, the temperature drop of upper, middle and lower heater
Speed is respectively：6℃/h,7℃/h,8℃/h；LC calculates current desired temperature T2 according to rate of temperature fall, and with calculate
Heter temperature actual value T1 compares, and is adjusted by PID, makes both equal；
7) when infrared radiation thermometer measures in-furnace temperature in the range of 300-70 DEG C, reduction of speed at a temperature of upper, middle and lower heater
Rate is respectively：4℃/h,6℃/h,5℃/h；LC calculates current desired temperature T2 according to rate of temperature fall, and with it is calculating plus
Hot device temperature actual value T1 compares, and is adjusted by PID, makes both equal；
8) system detectio is directly entered inflation procedure to after cooling program end of run, until inflation operation is finished；
The thermograde control technology of this set sapphire crystallization furnace, obtains good economic effect, its field personnel
Quantity reduces 30%, and crystal bottom cracking rate is reduced to 8%, and crystal yields is up to more than 95%.The crystal position of institute's output
Dislocation density is less than 400, and steady quality obtains the highly recognition of client.
Although as described above, having been represented with reference to specific preferred embodiment and having described the present invention, it must not be explained
It is to the limitation of itself of the invention.Under the premise of the spirit and scope of the present invention for not departing from appended claims definition, can be right
Various changes can be made in the form and details for it.
Claims (8)
1. a kind of thermograde control device for sapphire crystallization furnace, it is characterised in that including temperature in crucible, measurement crucible
The temperature measurer of degree, the bottom heater for heating crucible bottom, the upper portion heater for heating crucible top, for heating
Crucible middle part and the middle part heater being located between bottom heater and upper portion heater；The upper portion heater, middle part heating
Device, bottom heater be used to adjust to crucible top, middle part, bottom each stage of sapphire crystallization process temperature control
System.
2. a kind of control method using thermograde control device as claimed in claim 1, it is characterised in that sapphire crystallization
Stove runs successively after operation order is received according to heating set in advance, brilliant, cooling long, inflation procedure；
After starting heating schedule, then start heating schedule thermograde Controlling model；
After starting crystalline substance program long, start the thermograde Controlling model of crystal growing stage；
After crystalline substance long EP (end of program), start the thermograde Controlling model of cooling stage；
After cooling program end of run, into inflation procedure, until inflation operation is finished.
3. control method as claimed in claim 2, it is characterised in that the method for controlling heter temperature is：
1) the electric current I0 of HEATER FOR MEASURING, voltage V0, calculate each heater resistance, according in certain temperature range, resistivity
With temperature linear approximate relationship, heater actual temperature T1 is calculated；
2) according to each stage model in PLC, target temperature T2 is exported；
4) PLC, with T2 contrasts, carries out PID regulations according to the temperature T1 for calculating, and the voltage value V2 of output is adjusted, until T1 etc.
In T2.
4. control method as claimed in claim 2 or claim 3, it is characterised in that the heating schedule thermograde Controlling model is：
Upper portion heater temperature in 10-20 hours at the uniform velocity rises to 2100-2150 DEG C；
Heater temperature in 10-20 hours in middle part at the uniform velocity rises to 2150-2250 DEG C；
Bottom heater temperature in 10-20 hours at the uniform velocity rises to 2200-2300 DEG C.
5. control method as claimed in claim 2 or claim 3, it is characterised in that the thermograde Controlling model of crystal growing stage, including
Following steps：
1.1st, reduction of speed rate is set to 0.1-0.5 DEG C/h, middle part heter temperature fall off rate and sets at a temperature of setting upper portion heater
Advanced the speed for 0.3-0.8 DEG C/h, bottom heaters temperature and be set to 0.3-0.8 DEG C/h；
1.2nd, according to step 1.1 rate of temperature fall calculate when front upper part, middle part, bottom heater desired temperature T2, and with it is upper
Portion, middle part, bottom heaters temperature actual value T1 contrasts, are adjusted by PID, make T2 equal with T1.
6. control method as claimed in claim 2 or claim 3, it is characterised in that the thermograde Controlling model of cooling stage, including
Following steps：
2.1st, the temperature on detection infrared radiation thermometer, transfers the temperature control speed of different temperatures section；
2.2nd, when infrared radiation thermometer measurement in-furnace temperature is 1900-700 DEG C, reduction of speed rate difference at a temperature of upper portion heater
For：12-20℃/h；Reduction of speed rate is respectively at a temperature of the heater of middle part：35-50℃/h；Reduction of speed at a temperature of bottom heater
Rate is respectively：2-5℃/h；
2.3rd, when infrared radiation thermometer measurement in-furnace temperature is 700-300 DEG C, reduction of speed rate is respectively at a temperature of upper portion heater：
2-8℃/h；Reduction of speed rate is respectively at a temperature of the heater of middle part：2-8℃/h；Reduction of speed rate difference at a temperature of bottom heater
For：5-10℃/h；
2.4th, when infrared radiation thermometer measurement in-furnace temperature is 300-70 DEG C, reduction of speed rate is respectively at a temperature of upper portion heater：
2-5℃/h；Reduction of speed rate is respectively at a temperature of the heater of middle part：2-7℃/h；Reduction of speed rate difference at a temperature of bottom heater
For：3-8℃/h.
7. control method as claimed in claim 6, it is characterised in that：PLC is according to control heter temperature model cootrol top
Heater, middle part heater, the actual temperature of bottom heater.
8. control method as claimed in claim 2 or claim 3, it is characterised in that：The inflation procedure is as follows：
3.1st, after inflation procedure 20-50 hours is entered, toward stove in applying argon gas to 0.2-0.35mpa；
3.2nd, after step 3.1 end of run 10-20 hours, toward stove in applying argon gas to 0.5-0.7mpa；
3.3rd, after step 3.2 end of run 5-20 hours, direct blow-on.
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| CN201710088402.5A CN106835279A (en) | 2017-02-20 | 2017-02-20 | A kind of thermograde control device and control method for sapphire crystallization furnace |
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| CN201710088402.5A CN106835279A (en) | 2017-02-20 | 2017-02-20 | A kind of thermograde control device and control method for sapphire crystallization furnace |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102851745A (en) * | 2012-09-26 | 2013-01-02 | 南京晶升能源设备有限公司 | Sectional wolfram wire mesh heater for sapphire single crystal furnace |
| CN103132135A (en) * | 2012-12-13 | 2013-06-05 | 苏州工业园区杰士通真空技术有限公司 | High-efficient novel sapphire crystal growth system |
| CN103710745A (en) * | 2013-12-26 | 2014-04-09 | 南京晶升能源设备有限公司 | Method for automatically controlling growth of 85-120kg sapphire crystals |
-
2017
- 2017-02-20 CN CN201710088402.5A patent/CN106835279A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102851745A (en) * | 2012-09-26 | 2013-01-02 | 南京晶升能源设备有限公司 | Sectional wolfram wire mesh heater for sapphire single crystal furnace |
| CN103132135A (en) * | 2012-12-13 | 2013-06-05 | 苏州工业园区杰士通真空技术有限公司 | High-efficient novel sapphire crystal growth system |
| CN103710745A (en) * | 2013-12-26 | 2014-04-09 | 南京晶升能源设备有限公司 | Method for automatically controlling growth of 85-120kg sapphire crystals |
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Application publication date: 20170613 |