CN106835261B - A kind of growing method and application thereof - Google Patents
A kind of growing method and application thereof Download PDFInfo
- Publication number
- CN106835261B CN106835261B CN201710057088.4A CN201710057088A CN106835261B CN 106835261 B CN106835261 B CN 106835261B CN 201710057088 A CN201710057088 A CN 201710057088A CN 106835261 B CN106835261 B CN 106835261B
- Authority
- CN
- China
- Prior art keywords
- laser
- crystal
- tabletting
- nano
- crystallite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
Abstract
The present invention provides a kind of growing methods and application thereof comprising following steps: S1: after mixing by crystal growth material and compound containing ytterbium ion, being pressed into tabletting；S2: the tabletting is subjected to laser sintered growth, obtains crystallite or nano-crystal；S3: adjustment laser spot size makes the laser facula cover entire seed crystal surface, carries out in-situ annealing, obtain crystal.The growing method can be used for the preparation of ceramics.It is a kind of high-efficient the present invention is based on studying, stability is good, the low growing method of equipment cost, using the laser sintered method of substep, laser power density needed for the laser sintered process of second step will be well below laser power density needed for process laser sintered in the first step, laser power can be substantially reduced in this way, so that crystal growth equipment becomes to be very easy to satisfaction, and reduce energy consumption.
Description
Technical field
The present invention relates to crystal preparation fields, more specifically to a kind of High-quality crystal growth method and application thereof.
Background technique
Substance, by gas phase, liquid phase, solid phase transformation, is formed specific under the conditions ofs certain temperature, pressure, concentration, medium, pH etc.
The process of dimension sized crystals is known as crystal growth.
Growing method mainly has terraced method of czochralski method, heat-exchanging method, EFG technique, Bridgman-Stockbarger method, kyropoulos, temperature etc..
High temperature refractory oxide is generallyd use in czochralski method, such as zirconium oxide, aluminium oxide make thermal insulation material, make in furnace body in weak oxide gas
Atmosphere has oxidation to crucible, and is easy to cause dirt miscellaneous melt, in crystal the defects of formation wrappage, and for those
Reactivity is compared with strong or high fusing point material, it is difficult to find suitable crucible to contain them.Heat-exchanging method is in growth crystal mistake
It needs ceaselessly to pass to flowing helium in journey and carries out heat exchange, so the consumption of helium is quite big, growth crystal cost is very high.
The crystal that volume increases when Bridgman-Stockbarger method is unsuitable for being grown in crystallization, the crystal of growth usually have biggish internal stress, simultaneously
It is also difficult to directly observe in crystal growing process, growth cycle is long.Kyropoulos pass through top seed crystal seeding after, not to
Upper to lift but steep long crystalline substance, the crystal of growth in the melt and do not contact with crucible, dislocation density is low, monocrystalline good, but crystal is raw
The long accumulation for relying on artificial experience strongly, the consistency and yield rate of crystal are poor.The warm ladder entire grower of method is in opposite
Stable state, crucible and seed crystal do not rotate, and not only not because of free convection caused by fusant density in such crucible, but also do not have
Because of forced convection caused by mechanical stirring, solid liquid interface is interference-free, has more stable thermal field.
Summary of the invention
In view of this, the present invention provides, one kind is high-efficient, and stability is good, the low growing method of equipment cost and its use
On the way.
The present invention is achieved by the following technical solutions:
The present invention provides a kind of growing methods comprising following steps:
S1: after mixing by crystal growth material and compound containing ytterbium ion, it is pressed into tabletting；
S2: the tabletting is subjected to laser sintered growth, obtains crystallite or nano-crystal；
S3: adjustment laser spot size makes the laser facula cover entire seed crystal surface, carries out in-situ annealing,
Obtain crystal.
The laser is issued by continuous high power laser, and the superpower laser Output of laser wavelength is in quick
In the RESONANCE ABSORPTION band for changing ion, with sensitized ions ytterbium ion (Yb3+) for, can be wavelength is 915nm/940nm/960nm/
High-power semiconductor laser etc. near 976nm realizes ytterbium ion (Yb3+) resonance intensify.
Environment of crystal growth can be in air, or vacuumizes or is placed in protective atmosphere again after vacuumizing；It is described
Vacuumize the vacuum degree for referring to that extraction meets crystal growth requirement；According to the requirement of growth crystal property, may continue to entire
Crystal growing process until entire crystal growth process terminates, or continues to that the laser sintered process of the first step terminates；The pumping
Being placed in protective atmosphere after vacuum again is to be placed in protection gas again after vacuumizing process according to the requirement of growth crystal property
Atmosphere, the protective gas can be inert atmosphere, can be reducing atmosphere, can be mobility, is also possible to illiquidity
, it relative to atmospheric pressure, can be normal pressure, be also possible to negative pressure.
Preferably, step S2 specifically includes following operation:
The tabletting is placed in refractory ceramics container, and output laser facula is focused on wafer surface, so
After adjust laser output power so that tabletting is warming up to molten condition at laser focusing；
Laser power is slowly reduced, in-situ annealing is carried out；
When tabletting is cooled to room temperature, former melt region grows crystallite or nano-crystal.
Preferably, step S3 specifically includes following operation:
Adjust laser output power, namely change laser power density so that the crystallite or nano-crystal be warming up to again it is molten
Melt state；
Control output laser power, so that melt region is to outer ring from slowly spreading at crystallite or nano-crystal, until set
Fusion range；
Laser power is slowly reduced again, and in-situ annealing avoids the thermal stress generated because cooling velocity is too fast；
When tabletting is cooled to room temperature, former melt region grows required crystal.
Preferably, in step S3 required laser power density will it is laser sintered well below in step S2 during
Required laser power density.
Preferably, in step S2 and step S3, the temperature of laser sintered active region is real-time by infrared radiation thermometer
Monitoring intensifies the upconversion emission intensity distribution real-time monitoring under the laser action of sintering in resonance by sensitized ions.
Preferably, the sensitized ions are ytterbium ion.Ytterbium oxide can be derived from, ytterbium, the packet such as ytterbium chloride are fluorinated
Compound containing ytterbium ion；Yb3+With wider absorption band, allow to realize absorption band using the pump light source of wider wave-length coverage
Resonance intensify, this is highly advantageous to semiconductor laser is used；Two or more Yb3+Absorb pump light from ground state transition to swash
State is sent out, energy transfer when being returned to ground state makes active ions from the upward transition of ground state to active ions；Catalyzing activation ion
Pyroreaction；Resonance intensifies sensitized ions such as ytterbium ion (Yb3+) intensify it to height to intensify state, RESONANCE ABSORPTION enhances to photon
The absorption of energy, by energy transfer to active ions, radiationless transition improve mixing and doping local temperature and activate from
The activity of the solid phase reaction of son.
The present invention also provides a kind of purposes of growing method as the aforementioned in ceramic system is standby.
Basic principle of the invention is:
The growing method includes that laser resonant intensifies the chemical reaction of sensitized ions catalysis high temperature solid-state, laser substep is burnt
Knot induction crystallite or nano-crystal catalysis high temperature solid state reaction, laser resonant intensify crystallite or nano-crystal self-diffusion catalysis high temperature solid state reaction
Equal core processes；On the one hand, while laser sintered, resonance intensifies rare earth sensitized ions and realizes energy transfer with active ions
Intensify again, state is intensified based on rare earth ion and is catalyzed laser sintered high temperature solid state reaction, on the other hand, passes through distribution sintering growth
Sensitization containing rare earth/active ions crystallite or nano-crystal, Induced hyperthermia solid phase reaction self-diffusion catalysis reduce laser on the whole and burn
Temperature and energy consumption needed for tying high temperature solid state reaction, promote the controllability of sintering process, realize laser sintered large area from expansion
Dissipate crystal growth.
It is that the catalysis of the state of intensifying based on sensitized ions is high that laser resonant, which intensifies sensitized ions catalysis high temperature solid-state chemical reaction,
Warm solid state reaction process.By rare earth ion mixing and doping sensitization with (or) active ions, induce the laser of sensitized ions
Resonance intensify, sensitized ions intensify state to the energy transfer of active ions, active ions intensify state intensify again and multistep cascade
Intensify and the cooperation of sensitized ions intensifies and energy transfer etc., in the adjoint radiationless transition humidification area of energy transfer
Temperature, intensifying to the high rare earth sensitized ions for intensifying state and rare earth activation ion has better high-temperature catalytic activity, to urge
Change laser sintered high temperature solid state reaction, goes out crystallite or nano-crystal in laser sintered region growing.
Laser step sintering induction crystallite or nano-crystal catalysis high temperature solid state reaction process include: first in film micro area laser resonant
Intensify sintering, micro-crystal or nanocrystal are grown after annealing；Then laser sintered again in big regional scope, it realizes micro-
The resonance of brilliant or nano-crystal intensifies and is catalyzed enhancing.The crystallite or nano-crystal of previous one-step growth in laser sintered step by step, in subsequent point
In cloth sintering, on the one hand enhance sensitized ions to the RESONANCE ABSORPTION of laser, on the other hand it is relevant to intensify state energy transfer for enhancing
Catalytic action, it can be ensured that be catalyzed high temperature solid state reaction under lower laser power density.
Laser resonant intensifies crystallite or nano-crystal self-diffusion catalysis high temperature solid state reaction process is as follows: dropping in big regional scope
Low laser power density implements sintering, and one makes first only in crystallite or nano-crystal periphery catalysis high temperature solid state reaction, then from
Crystallite or the diffusion of nano-crystal periphery finally realize that crystallite or nano-crystal are catalyzed oneself of high temperature solid state reaction in entire laser-irradiated domain
Diffusion；Furthermore the crystallite or nano-crystal in laser sintered region provide seed crystal grain, conducive to the growth of high-quality crystal.
Compared with prior art, the present invention have it is following the utility model has the advantages that
A kind of high-efficient the present invention is based on studying, stability is good, the low growing method of equipment cost, uses substep
Laser sintered method, laser power density needed for the laser sintered process of second step will be well below mistake laser sintered in the first step
Laser power density needed for journey can substantially reduce laser power in this way, so that crystal growth equipment becomes to be very easy to completely
Foot, and reduce energy consumption；Not all raw material melts simultaneously in raw material melting process, requires the crucible of carrying raw material not tight
It is severe, extremely high-temperature crucible container is not needed, and extend the use time of the containers such as crucible；High power continuous laser fuel factor
Relatively strong, the heating of crystal growth raw material is very fast, so that rate of crystalline growth is quickly, it is high that the method grows crystal efficiency.
Detailed description of the invention
Upon reading the detailed description of non-limiting embodiments with reference to the following drawings, other feature of the invention,
Objects and advantages will become more apparent upon:
Fig. 1 is a kind of crystal growing apparatus structural schematic diagram of the present invention；
Fig. 2 is a kind of ceramic grower structural schematic diagram of the present invention.
Specific embodiment
The present invention is described in detail combined with specific embodiments below.Following embodiment will be helpful to the technology of this field
Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that the ordinary skill of this field
For personnel, without departing from the inventive concept of the premise, various modifications and improvements can be made.These belong to the present invention
Protection scope.
The structure of crystal growing apparatus provided by the invention is as shown in Figure 1, comprising: laser 101, focusing component, reaction
Room 502, infrared radiation thermometer 401, annular powder feeder 301, laser sintered effect platform 302 and moveable piston 501, move and live
Plug 501 is movably set in reaction chamber 502, and laser sintered effect platform 302 is set to 501 surface of moveable piston, and annular is sent
Powder device 301 is set to the surface of laser sintered effect platform 302, and focusing component is set to the oral area of annular powder feeder 301, swashs
Light device 101 is set to the side of focusing component, and focusing component includes: collimation lens 201, reflecting mirror 202 and condenser lens 203,
Laser from laser injection after, by collimation lens 201 be straightened after, inject reflecting mirror 202, by reflecting mirror 202 reflection,
Condenser lens 203 is injected, laser sintered effect platform 302 is transmitted through by condenser lens 203；Infrared radiation thermometer 401 and laser are burnt
Knot effect platform 302 is in contact.
The structure of ceramics grower provided by the invention is as shown in Fig. 2, include
Embodiment 1
The present embodiment is related to a kind of growing method, includes the following steps:
By calcirm-fluoride (GaF2) powder and ytterbium oxide (Yb2O3) powder according to molar ratio 1:0.075 ratio weigh 30g,
The quality of middle calcirm-fluoride powder is 21.8g, and the quality of ytterbium oxide powder is 8.2g.Powder is put into mortar, is sufficiently stirred
It is even, powder is fused together as far as possible.Mixed-powder is placed in annular powder feeder 301, powder passes through annular powder feeding
Device nozzle, uniformly output is on laser sintered effect platform 302.Annular powder feeder is controlled by external program, thus it is possible to vary is sent
Powder time and powder feeding rate.
Package unit is placed in after vacuumizing in the closed environment 502 for being filled with argon gas (Ar) atmosphere.What this experiment used swashs
Light device 101 is semiconductor laser, and Output of laser wavelength 976nm, laser is by coupling fiber-optic output output.Laser first passes through
One piece of collimation lens 201 is crossed, the diverging hot spot of output is collimated, then by one piece of reflecting mirror 202, changes laser transmission direction,
Again by one piece of condenser lens 203, by hot spot focus processing.In experimentation, pass through 401 real-time monitoring laser of infrared radiation thermometer
The temperature in agglomeration area.When monitoring temperature reaches fusing point, it can determine that raw material starts to melt.Laser sintered platform 302
It is placed in moveable piston 501, the movement of piston is controlled by computer program.When laser output laser power is constant, lead to
Cross the position for changing piston, it can change the area of output laser facula (acting on laser sintered platform), namely change
The power density of laser.Firstly, adjusting at laser sintered platform 302 to laser focusing focus, laser power density reaches at this time
Maximum value.Laser output power is adjusted, when laser output laser power reaches 1.17W/mm2When, powder at laser focusing
Start to melt, forms melting charge.It is for 10 seconds, then reduce laser output power.It is 500mW/1min that power, which reduces speed,
Avoid the thermal stress generated because cooling velocity is too fast.After 7 minutes, the cooling annealing of former melt region is completed, and grows seed crystalline substance
Body.
501 position of piston, namely laser sintered 302 position of platform of adjustment are adjusted, so that laser facula becomes larger, covering
Powder surface.Equally, pass through the temperature of the laser sintered active region of 401 real-time monitoring of infrared radiation thermometer.Adjust laser output work
Rate, when laser output laser power density reaches 0.026W/mm2When, powder surface seed crystal nearby is first begin to reach
Fusing point, into melting state.Over time, melt region can from seed crystal region slowly to outer ring spread, when
When duration reaches 13 minutes, powder surface is all melted, and is melted with a thickness of 1mm.Then laser output power is reduced.This
When melt region area it is larger, power reduce speed be adjusted to 200mW/1min, avoid the heat generated because cooling velocity is too fast
Stress.After 15 minutes, the cooling annealing of melt region is completed, and crystal growth is completed.
The structure of ceramics preparation facilities provided by the invention is as shown in Fig. 2, include reaction chamber 502, laser 101, reflection
Mirror 202, condenser lens 203, powder delivery conduit 5, mobile work platform 10 and ball mill 9, condenser lens are set to reaction
The surface of room 502, reflecting mirror 202 are set to the top of condenser lens 203, and laser 101 is set to the one of mirror lens 202
Side, powder delivery conduit 5 are arranged in reaction chamber 502, and mobile work platform 10 is movably set in the bottom of reaction chamber 502,
The top of reaction chamber 502 is additionally provided with air inlet 5021, and ball mill 9 is set on mobile work platform 10.
Embodiment 2
A kind of preparation method for ceramics that the present embodiment is related to, includes the following steps:
By aluminium oxide (Al2O3) powder and ytterbium oxide (Yb2O3) powder according to molar ratio 1:1 ratio weigh 50g, sufficiently
Grinding stirs evenly.Mixed-powder is by powder delivery conduit 5, and uniformly output passes through ball milling on mobile work platform 10
Powder surface is flattened and is compacted by machine 9, forms regular tabletting shape 8.
Argon gas (Ar) is filled with into the reaction chamber 502 by air inlet 5021, so that ceramic growth course is in indifferent gas
In body atmosphere.Laser 1 is semiconductor laser, and Output of laser wavelength 976nm, it is defeated that laser passes through coupling fiber-optic output
Out.Laser changes laser transmission direction by one piece of reflecting mirror 202, then by one piece of condenser lens 203, at hot spot focusing
Reason.The temperature of 401 real-time monitoring ceramics vitellarium of infrared radiation thermometer.Mobile work platform 10 is adjusted, i.e. change workbench
Upper laser facula area, so that spot diameter reaches 10mm, when adjusting laser output power to 180W, hot spot is covered at powder
Start to melt, into liquid phase ceramics synthetic state.After 4 minutes, laser output power is slowly reduced.
Laser output power is adjusted again to 150W, and the duration is still 4 minutes, slowly reduces laser output again
Power；It repeats the above steps 10 times, obtained sintered product is aluminium oxide ceramics.
Specific embodiments of the present invention are described above.It is to be appreciated that the invention is not limited to above-mentioned
Particular implementation, those skilled in the art can make various deformations or amendments within the scope of the claims, this not shadow
Ring substantive content of the invention.
Claims (4)
1. a kind of growing method, which comprises the steps of:
S1: after mixing by crystal growth material and compound containing ytterbium ion, it is pressed into tabletting；
S2: the tabletting is subjected to laser sintered growth, obtains crystallite or nano-crystal；
S3: adjustment laser spot size makes the laser facula cover entire seed crystal surface, carries out in-situ annealing, obtain
Crystal；
Step S2 specifically includes following operation:
The tabletting is placed in refractory ceramics container, and output laser facula is focused on wafer surface, is then adjusted
Whole laser output power, so that tabletting is warming up to molten condition at laser focusing；
Laser power is reduced, in-situ annealing is carried out；
When tabletting is cooled to room temperature, former melt region grows crystallite or nano-crystal；
Step S3 specifically includes following operation:
Laser output power is adjusted, namely changes laser power density, so that the crystallite or nano-crystal are warming up to molten again
State；
Control output laser power, so that melt region is to outer ring from spreading at crystallite or nano-crystal, until set melting model
It encloses；
Laser power is reduced again, and in-situ annealing avoids the thermal stress generated because cooling velocity is too fast；
When tabletting is cooled to room temperature, former melt region grows required crystal.
2. growing method as described in claim 1, which is characterized in that in step S2 and step S3, laser sintered effect
The temperature in area by infrared radiation thermometer real-time monitoring or by sensitized ions resonance intensify under the laser action of sintering upper turn
Change spectral intensity distribution real-time monitoring.
3. growing method as claimed in claim 2, which is characterized in that the sensitized ions are ytterbium ion.
4. a kind of purposes of growing method as described in claim 1 in ceramic system is standby.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710057088.4A CN106835261B (en) | 2017-01-23 | 2017-01-23 | A kind of growing method and application thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710057088.4A CN106835261B (en) | 2017-01-23 | 2017-01-23 | A kind of growing method and application thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106835261A CN106835261A (en) | 2017-06-13 |
| CN106835261B true CN106835261B (en) | 2019-03-15 |
Family
ID=59122453
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710057088.4A Active CN106835261B (en) | 2017-01-23 | 2017-01-23 | A kind of growing method and application thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106835261B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112897528B (en) * | 2021-03-24 | 2022-11-22 | 云南华谱量子材料有限公司 | Method for synthesizing boron carbide/carbon powder material by laser sintering |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1351641A (en) * | 1999-03-19 | 2002-05-29 | 拉特格斯州立大学 | Rare earth doped host materials |
| CN1428395A (en) * | 2001-12-24 | 2003-07-09 | 长春科润光电子材料科技有限公司 | Red colour conversion material |
| CN101618946A (en) * | 2009-07-03 | 2010-01-06 | 中南大学 | Yb<3+>-doped oxyfluoride transparent microcrystal glass material and preparation method thereof |
| CN103666475A (en) * | 2013-12-11 | 2014-03-26 | 昆明理工大学 | Rare earth doped glass frequency conversion luminous material and preparation method thereof |
| CN103803804A (en) * | 2012-11-14 | 2014-05-21 | 中国科学院上海硅酸盐研究所 | Nano glass ceramic up-conversion luminescent material and preparation method thereof |
| CN105602566A (en) * | 2016-02-29 | 2016-05-25 | 武汉理工大学 | Rare earth-doped NaGdF4 upconversion nanocrystalline and preparation method thereof |
| CN106010536A (en) * | 2016-05-26 | 2016-10-12 | 中国科学院宁波材料技术与工程研究所 | Method for synthesizing monodisperse rare earth doped up-converted fluorescence nanocrystalline through microwave assistance, and product thereof and application |
| CN106082676A (en) * | 2016-06-06 | 2016-11-09 | 中国科学院上海光学精密机械研究所 | Mix the INFRARED ABSORPTION height Aluminous Silicate Glass-Ceramics of samarium, ytterbium |
-
2017
- 2017-01-23 CN CN201710057088.4A patent/CN106835261B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1351641A (en) * | 1999-03-19 | 2002-05-29 | 拉特格斯州立大学 | Rare earth doped host materials |
| CN1428395A (en) * | 2001-12-24 | 2003-07-09 | 长春科润光电子材料科技有限公司 | Red colour conversion material |
| CN101618946A (en) * | 2009-07-03 | 2010-01-06 | 中南大学 | Yb<3+>-doped oxyfluoride transparent microcrystal glass material and preparation method thereof |
| CN103803804A (en) * | 2012-11-14 | 2014-05-21 | 中国科学院上海硅酸盐研究所 | Nano glass ceramic up-conversion luminescent material and preparation method thereof |
| CN103666475A (en) * | 2013-12-11 | 2014-03-26 | 昆明理工大学 | Rare earth doped glass frequency conversion luminous material and preparation method thereof |
| CN105602566A (en) * | 2016-02-29 | 2016-05-25 | 武汉理工大学 | Rare earth-doped NaGdF4 upconversion nanocrystalline and preparation method thereof |
| CN106010536A (en) * | 2016-05-26 | 2016-10-12 | 中国科学院宁波材料技术与工程研究所 | Method for synthesizing monodisperse rare earth doped up-converted fluorescence nanocrystalline through microwave assistance, and product thereof and application |
| CN106082676A (en) * | 2016-06-06 | 2016-11-09 | 中国科学院上海光学精密机械研究所 | Mix the INFRARED ABSORPTION height Aluminous Silicate Glass-Ceramics of samarium, ytterbium |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106835261A (en) | 2017-06-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101370970B (en) | Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics | |
| JP5493092B2 (en) | Method for producing gallium oxide single crystal and gallium oxide single crystal | |
| CN105696078B (en) | A kind of preparation method of monocrystalline lithium tantalate | |
| CN107177884B (en) | A kind of growing method and device of fluoride single crystal | |
| EP3305948B1 (en) | Apparatus for producing single crystal and method for producing single crystal | |
| CN100434574C (en) | Growth method for Yb and Cr4+ doped yttrium-aluminium garnet laser crystal | |
| CN104962994A (en) | Method for growing specific-size rare-earth-doped gallium-containing garnetite series crystal by edge-defined process | |
| CN106521625B (en) | Mix tetravalence chromium gallium oxide crystal and preparation method and application | |
| CN106835261B (en) | A kind of growing method and application thereof | |
| Sun et al. | Pulling growth technique towards rare earth single crystals | |
| CN102838093A (en) | LiGaGe2Se6 compound, LiGaGe2Se6 nonlinear optical crystals, and preparation method and application thereof | |
| CN110331443A (en) | A kind of rare earth ion doped germanate eutectic material and preparation method thereof | |
| CN102168299B (en) | Method for growing phosphorus-silicon-cadmium single crystal | |
| CN103451730B (en) | Cd4rO (BO3)3compound, Cd4rO (BO3)3optical crystal and preparation method and purposes | |
| CN110468445A (en) | Boric acid caesium barium nonlinear optical crystal and its preparation method and application | |
| CN115341284B (en) | High-concentration gradient neodymium doped gadolinium yttrium aluminum garnet laser crystal and preparation method thereof | |
| CN102168305A (en) | Synthesis method of phosphorus-silicon-cadmium polycrystal material | |
| CN106012020B (en) | Thulium ytterbium is co-doped with upconversion laser materials and preparation method using four molybdates as matrix | |
| CN108893780A (en) | A kind of crystal growing apparatus and the double-doped LuAG crystal of a kind of Er, Yb and preparation method thereof | |
| CN103757689A (en) | Method for casting monocrystalline silicon by inducing growth utilizing monocrystalline silicon seed and product | |
| CN107858750A (en) | A kind of Al2O3‑YAG:Ce3+The preparation method of eutectic fluorescence ceramics | |
| CN100510205C (en) | Yb-doped gadolinium germanate, lanthanum germanate and melt-method growth process thereof | |
| CN105951176A (en) | Fluxing agent lifting growing method for rare earth sesquioxide laser crystals | |
| CN208136383U (en) | A kind of compound thermal field structure of EFG technique growth gallium oxide single crystal | |
| CN109695058A (en) | Large scale Yb:YAG laser crystal heat exchange growing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20180507 Address after: 200237 District 2319, room 69, Lane 1985, Chunshen Road, Minhang District, Shanghai 1 district. Applicant after: Shanghai Langyan Optoelectronics Technology Co.,Ltd. Applicant after: East China Normal University Address before: 200237 District 2319, room 69, Lane 1985, Chunshen Road, Minhang District, Shanghai 1 district. Applicant before: Shanghai Langyan Optoelectronics Technology Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20211018 Address after: Room 4001, building 21, No. 123, Lane 1165, Jindu Road, Minhang District, Shanghai 201100 Patentee after: SHANGHAI LANGYAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Patentee after: Chongqing Research Institute of East China Normal University Address before: 200237 District 2319, room 69, Lane 1985, Chunshen Road, Minhang District, Shanghai 1 district. Patentee before: SHANGHAI LANGYAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Patentee before: EAST CHINA NORMAL University |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230522 Address after: No. 2, 1st Floor, Building 1, No. 2 Huizhu Road, Yubei District, Chongqing, 401120 Patentee after: Chongqing Huapu Quantum Technology Co.,Ltd. Address before: Room 4001, building 21, No. 123, Lane 1165, Jindu Road, Minhang District, Shanghai 201100 Patentee before: SHANGHAI LANGYAN OPTOELECTRONICS TECHNOLOGY Co.,Ltd. Patentee before: Chongqing Research Institute of East China Normal University |