CN106817806B - A kind of controllable silicon light modulation gamut is without stroboscopic circuit - Google Patents

A kind of controllable silicon light modulation gamut is without stroboscopic circuit Download PDF

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Publication number
CN106817806B
CN106817806B CN201710084153.2A CN201710084153A CN106817806B CN 106817806 B CN106817806 B CN 106817806B CN 201710084153 A CN201710084153 A CN 201710084153A CN 106817806 B CN106817806 B CN 106817806B
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circuit
stroboscopic
semiconductor
oxide
metal
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CN106817806A (en
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徐水盛
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YINGHUI LAMP ORNAMENTS CO Ltd DONGGUAN
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YINGHUI LAMP ORNAMENTS CO Ltd DONGGUAN
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B45/00Circuit arrangements for operating light-emitting diodes [LED]

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Abstract

A kind of controllable silicon light modulation gamut is without stroboscopic circuit, including light adjusting circuit and the elimination stroboscopic circuit that is connected on light adjusting circuit, and the elimination stroboscopic circuit includes a metal-oxide-semiconductor, and the metal-oxide-semiconductor is connected on the positive or negative pole of light adjusting circuit output end;The present invention eliminates electrical combination using light adjusting circuit and stroboscopic, light adjusting circuit is equipped with thyristor regulating optical chip, when metal-oxide-semiconductor is operated in constant current area, the voltage of its grid source electrode is constant, the electric current for then flowing through hourglass source electrode is invariable, total power section to realize High Power Factor ensures that LED operation is stablized, prevents from damaging user because of LED stroboscopics without stroboscopic phenomenon.

Description

A kind of controllable silicon light modulation gamut is without stroboscopic circuit
Technical field
The present invention relates to a kind of light adjusting circuits more particularly to a kind of controllable silicon light modulation gamut without stroboscopic circuit.
Background technology
LED (Light Emitting Diode, light emitting diode) is a kind of can to convert electrical energy into consolidating for visible light The semiconductor devices of state, it can directly be converted electricity to light.LED light due to energy-saving and environmental protection, can it is light-operated, highly practical, The lot of advantages such as stability height, response time short, long-life, have been widely used for various photographs in promoting low-carbon life today Bright field.
LED chip generally works under d.c. current, needs driving power that city's alternating current is converted into the direct current of LED operation Electricity, however, existing LED lamp since circuit design is unreasonable, causes the supply voltages of lamps and lanterns within the period with sine wave , to being fluctuated back and forth between trough, there is stroboscopic phenomenon in wave crest in form, to the negative effect of user visually generated.Stroboscopic is deep Degree is bigger, and negative effect is bigger, and harm is more serious.
Utility model content
Based on this, it is necessary to be directed to deficiency in the prior art, provide a kind of controllable silicon light modulation gamut without stroboscopic circuit.
A kind of controllable silicon light modulation gamut is without stroboscopic circuit, including light adjusting circuit and the elimination frequency that is connected on light adjusting circuit Lightning road, the elimination stroboscopic circuit include a metal-oxide-semiconductor, and the metal-oxide-semiconductor is connected on light adjusting circuit negative pole of output end;
When metal-oxide-semiconductor is connected to the cathode of light adjusting circuit output end, eliminate stroboscopic circuit include resistance RN1, it is capacitance CN1, steady Diode DN1, zener diode DN2, resistance RN2, metal-oxide-semiconductor QN1, the source electrode of the metal-oxide-semiconductor is pressed to be connected to tune by resistance RN2 On the cathode of the output end of optical circuit, the grid of the metal-oxide-semiconductor is connected to the cathode of the output end of light adjusting circuit by capacitance CN1 On, the both ends of resistance RN1 are connected on the grid and drain electrode of metal-oxide-semiconductor, the zener diode DN1 and zener diode It is connected in parallel on resistance RN1 after DN2 series connection, zener diode DN1 and zener diode DN2 are in oppositely arranged, zener diode DN1 The poles K connect with the poles K of zener diode DN2, cathode output end of the drain electrode as LED of metal-oxide-semiconductor.
Further, the stroboscopic circuit of eliminating further includes the LC in parallel electricity in parallel being made of resistance R15 and capacitance CC6 The output end on road, light adjusting circuit is connected in parallel on resistance R15 and capacitance CC6.
Further, the time constant of described RN1, CN1 are arranged in the voltage range not less than 10MS.
Further, the light adjusting circuit includes EMI filter rectifiers, RC absorbing circuits, pwm control circuit, DC TO DC converter circuits, output rectifier and filter, the EMI filter rectifiers, RC absorbing circuits, DC TO DC converter electricity Road, output rectifier and filter are sequentially connected in series, and the pwm control circuit is connected to EMI filter rectifiers and DC TO DC converter circuits.
Further, light adjusting circuit further includes a dim signal detection circuit, and the pwm control circuit filters whole with EMI It is attached by dim signal detection circuit between current circuit,
Further, the EMI filter rectifiers are equipped with thyristor regulating optical chip.
The beneficial effects of the present invention are:Electrical combination is eliminated using light adjusting circuit and stroboscopic, light adjusting circuit is equipped with can It controls silicon and dims chip, when being operated in constant current area on metal-oxide-semiconductor, the voltage of grid source electrode is constant, then the electric current for flowing through hourglass source electrode is permanent Fixed constant, the total power section to realize High Power Factor ensures that LED operation is stablized, prevents because of LED stroboscopics pair without stroboscopic phenomenon User's eyes damage.
Description of the drawings
Fig. 1 is circuit diagram of the controllable silicon light modulation gamut without stroboscopic circuit first embodiment of the present invention.
Fig. 2 is circuit diagram of the controllable silicon light modulation gamut without stroboscopic circuit second embodiment of the present invention.
Specific implementation mode
In order to make the object, technical solution and advantage of invention be more clearly understood, with reference to the accompanying drawings and embodiments, to hair It is bright to be further elaborated.It should be appreciated that specific embodiment described herein is not used to limit only to explain invention Fixed invention.
As shown in Figure 1, it is the first embodiment of invention, the present embodiment provides a kind of controllable silicon light modulation gamuts without stroboscopic Circuit, the controllable silicon light modulation gamut include light adjusting circuit and the elimination stroboscopic circuit being connected on light adjusting circuit without stroboscopic circuit 70, the light adjusting circuit is used to be filtered LED access circuits, rectification, and the elimination stroboscopic circuit 70 is defeated to light adjusting circuit The electric signal gone out carries out eliminating stroboscopic processing.
The light adjusting circuit includes EMI filter rectifiers 10, RC absorbing circuits 20, pwm control circuit 50, DC TO DC Converter circuit 30, output rectifier and filter 40, the EMI filter rectifiers 10, RC absorbing circuits 20, DC TO DC become Converter circuit 30, output rectifier and filter 40 are sequentially connected in series, and EMI filter rectifiers 10 are equipped with controllable silicon light modulation core Piece IW3688, the pwm control circuit 50 are connected to EMI filter rectifiers 10 and DC TO DC converter circuits 30 On, light adjusting circuit further includes a dim signal detection circuit 60, and the pwm control circuit 50 passes through dim signal detection circuit 60 It is attached between EMI filter rectifiers 10, the pwm control circuit 50 realizes the work(to EMI filter rectifiers 10 Rate factor is corrected, and by adjusting the size of d. c. voltage signal, changes the current peak size connected in the circuit, from And it realizes LED and is dimmed.
The elimination stroboscopic circuit 70 includes resistance RN1, capacitance CN1, zener diode DN1, zener diode DN2, electricity RG1, metal-oxide-semiconductor QN1 are hindered, the resistance RN1 connects with capacitance CN1, and is connected in parallel on the positive and negative electrode of light adjusting circuit output end; The zener diode DN1 is connected in parallel on after connecting with zener diode DN2 on resistance RN1, wherein the poles K of zener diode DN1 Be connected to the A of DN2 extremely on, the poles A of zener diode DN1 are connect with the anode of light adjusting circuit output end, and the metal-oxide-semiconductor is connected to On the anode of light adjusting circuit output end, the grid of metal-oxide-semiconductor is connected to the connection between capacitance CN1 and resistance RN1 by resistance RG1 On circuit, cathode output end that the source electrode of metal-oxide-semiconductor is powered as LED;Preferably, the elimination stroboscopic circuit 70 further includes resistance The LC parallel circuits in parallel of R15 and capacitance CC6 compositions, the output end of light adjusting circuit are connected in parallel on resistance R15 and capacitance CC6.
Operation principle of the controllable silicon light modulation gamut without stroboscopic circuit of the present invention is as follows:
1, CN1RN1 forms a few minutes filter circuit in circuit, eliminates working frequency ripple wave, and DN1DN2 plays the role of quick charge, together When prevent capacitance CN1 electric discharge damage QN1.
2, control metal-oxide-semiconductor QN1 works in constant current area, and the gate-source voltage for controlling metal-oxide-semiconductor QN1 is constant, makes to flow through metal-oxide-semiconductor The leakage of QN1, the constant current hold of source electrode.
3, in order to enable filter circuit to eliminate the AC compounent comprising 100HZ or so in LED drive circuit output voltage, The time constant of RN1, CN1 are arranged in the voltage range not less than 10MS, wherein time constant is RN1*CN1, to filter The low-limit frequency that wave circuit can remove AC ripple is 10HZ.
4, the cut-in voltage VTH of metal-oxide-semiconductor QN1 is constant, when it is in constant current area, if the voltage of its grid source electrode is constant, It is invariable then to flow through leakage, the electric current IDS of source electrode, since metal-oxide-semiconductor has above-mentioned characteristic, need to only control metal-oxide-semiconductor QN1 in perseverance Area is flowed, and VGS is invariable, then QN1 has constant-current characteristics so that AC compounent is free of in LED load electric current, to without frequency It dodges.
As shown in Fig. 2, it is implemented for the second of the present invention, the present embodiment and embodiment one are substantially similar, and same includes adjusting Optical circuit and elimination stroboscopic circuit 70, the main distinction is:The metal-oxide-semiconductor of embodiment one is connected on anode, and the present embodiment In, the metal-oxide-semiconductor is connected on cathode, specifically, the elimination stroboscopic circuit 70 of the present embodiment include resistance RN1, capacitance CN1, Zener diode DN1, zener diode DN2, resistance RN2, metal-oxide-semiconductor QN1;
The source electrode of the metal-oxide-semiconductor is connected to by resistance RN2 on the cathode of the output end of light adjusting circuit, the metal-oxide-semiconductor Grid is connected to by capacitance CN1 on the cathode of the output end of light adjusting circuit, and the both ends of resistance RN1 are connected to metal-oxide-semiconductor On grid and drain electrode, the zener diode DN1 is connected in parallel on after connecting with zener diode DN2 on RN1, zener diode DN1 It is in oppositely arranged with zener diode DN2, the poles K of zener diode DN1 are connect with the poles K of zener diode DN2, metal-oxide-semiconductor The cathode output end to drain as LED.Preferably, the elimination stroboscopic circuit 70 further includes that resistance R15 and capacitance CC6 are formed The output end of LC parallel circuits in parallel, light adjusting circuit is connected in parallel on resistance R15 and capacitance CC6.
The beneficial effects of the present invention are:Electrical combination is eliminated using light adjusting circuit and stroboscopic, light adjusting circuit is equipped with can Control silicon dim chip, when the grid on metal-oxide-semiconductor is in constant current area, the voltage of grid source electrode is constant, then flow through leakage, source electrode electricity It flows invariable, to realize that the total power section of High Power Factor without stroboscopic phenomenon, ensures that LED operation is stablized, prevents because of LED frequencies Sudden strain of a muscle damages user's eyes.
The several embodiments invented above described embodiment only expresses, the description thereof is more specific and detailed, but not It can therefore be construed as limiting the scope of the patent.It should be pointed out that for those of ordinary skill in the art, Under the premise of not departing from inventive concept, various modifications and improvements can be made, these belong to the protection domain of invention.Cause This, the protection domain of patent of invention should be determined by the appended claims.

Claims (6)

1. a kind of controllable silicon light modulation gamut is without stroboscopic circuit, which is characterized in that including light adjusting circuit and be connected to light adjusting circuit On elimination stroboscopic circuit, the elimination stroboscopic circuit includes a metal-oxide-semiconductor, and the metal-oxide-semiconductor is connected to light adjusting circuit output end On cathode;
When metal-oxide-semiconductor is connected to the cathode of light adjusting circuit output end, it includes resistance RN1, capacitance CN1, voltage stabilizing two to eliminate stroboscopic circuit The source electrode of pole pipe DN1, zener diode DN2, resistance RN2, metal-oxide-semiconductor QN1, the metal-oxide-semiconductor are connected to light modulation electricity by resistance RN2 On the cathode of the output end on road, the grid of the metal-oxide-semiconductor is connected to by capacitance CN1 on the cathode of the output end of light adjusting circuit, The both ends of resistance RN1 are connected on the grid and drain electrode of metal-oxide-semiconductor, and the zener diode DN1 goes here and there with zener diode DN2 It is connected in parallel on after connection on resistance RN1, zener diode DN1 and zener diode DN2 are in oppositely arranged, the poles K of zener diode DN1 It is connect with the poles K of zener diode DN2, the cathode output end of metal-oxide-semiconductor to drain as LED.
2. a kind of controllable silicon light modulation gamut as described in claim 1 is without stroboscopic circuit, it is characterised in that:The elimination stroboscopic Circuit further includes the LC parallel circuits in parallel being made of resistance R15 and capacitance CC6, and the output end of light adjusting circuit is connected in parallel on resistance On R15 and capacitance CC6.
3. a kind of controllable silicon light modulation gamut as described in claim 1 is without stroboscopic circuit, it is characterised in that:Described RN1, CN1 Time constant be arranged in the voltage range not less than 10MS.
4. a kind of controllable silicon light modulation gamut as described in claim 1 is without stroboscopic circuit, it is characterised in that:The light adjusting circuit Including EMI filter rectifiers, RC absorbing circuits, pwm control circuit, DC TO DC converter circuits, output rectification filter electricity Road, the EMI filter rectifiers, RC absorbing circuits, DC TO DC converter circuits, output rectifier and filter are sequentially connected in series Connection, the pwm control circuit are connected to EMI filter rectifiers and DC TO DC converter circuits.
5. a kind of controllable silicon light modulation gamut as claimed in claim 4 is without stroboscopic circuit, it is characterised in that:Light adjusting circuit also wraps A dim signal detection circuit is included, passes through dim signal detection circuit between the pwm control circuit and EMI filter rectifiers It is attached.
6. a kind of controllable silicon light modulation gamut as claimed in claim 4 is without stroboscopic circuit, it is characterised in that:The EMI filtering Rectification circuit is equipped with thyristor regulating optical chip.
CN201710084153.2A 2017-02-16 2017-02-16 A kind of controllable silicon light modulation gamut is without stroboscopic circuit Active CN106817806B (en)

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CN201710084153.2A CN106817806B (en) 2017-02-16 2017-02-16 A kind of controllable silicon light modulation gamut is without stroboscopic circuit

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CN109831849B (en) * 2019-03-04 2024-01-09 深圳民爆光电股份有限公司 Analog signal dimming and toning stroboflash-free LED driving circuit

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