CN106816423A - A kind of Graphene bonding brass wire and preparation method thereof - Google Patents
A kind of Graphene bonding brass wire and preparation method thereof Download PDFInfo
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- CN106816423A CN106816423A CN201710044328.7A CN201710044328A CN106816423A CN 106816423 A CN106816423 A CN 106816423A CN 201710044328 A CN201710044328 A CN 201710044328A CN 106816423 A CN106816423 A CN 106816423A
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/43—Manufacturing methods
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
- H01L2224/438—Post-treatment of the connector
- H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/45693—Material with a principal constituent of the material being a solid not provided for in groups H01L2224/456 - H01L2224/45691, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
Abstract
The invention provides a kind of Graphene bonding brass wire and preparation method thereof, including copper wire and the graphene layer being wrapped in outside copper wire, the line footpath of described copper wire is 0.016 0.050mm, and the thickness of graphene layer is 0.001 0.2um.Preparation method, comprises the following steps：S1, crystalline flake graphite is aoxidized, be configured to graphene oxide water solution；S2, bonding brass wire surface coat graphene oxide solution；S3, graphene oxide is reduced to Graphene, and is directly coated on bonding brass wire surface；S4, Graphene bonding brass wire surface coating annealing liquid drying, the present invention not only solve copper cash easily aoxidize, the problem of outer wrap profile and wire haircuts, and with environmental protection, increased the electric conductivity and thermal diffusivity of material the characteristics of.The present invention advances the process of copper-based bonding wire industrialization.
Description
Technical field
The present invention relates to the manufacture art field of microelectronics Packaging bonding wire, more particularly to a kind of Graphene bonding brass wire and
Its preparation method.
Background technology
Copper has the characteristics of conductive, thermal conductivity is good as the material of bonding wire, but the shortcoming that copper cash is easily aoxidized is always
Large-scale application of the bonding brass wire in field of semiconductor package is restricted, particularly high-end packing forms never have application.Mesh
The universal method of preceding use is the one layer of noble metal porpezite of plated surface in copper cash, plays oxidation resistant effect, but production cost
It is significantly increased, and material hardness substantially increases, and is unfavorable for bonding.
The content of the invention
The invention provides a kind of Graphene bonding brass wire and preparation method thereof, the method is simple to operate, both solves copper
The problem that line is easily aoxidized does not increase the hardness of material yet, and increased the electric conductivity and thermal diffusivity of material.
In order to solve the above technical problems, the invention provides a kind of Graphene bonding brass wire, including copper wire and it is wrapped in copper
Graphene layer outside silk, the line footpath of described copper wire is 0.016-0.050mm, and the thickness of graphene layer is 0.001-0.2um.
A kind of preparation method of Graphene bonding brass wire of the present invention, comprises the following steps：
S1, crystalline flake graphite is aoxidized, be configured to graphene oxide water solution；
S2, bonding brass wire surface coat graphene oxide solution；
S3, graphene oxide is reduced to Graphene, and is directly coated on bonding brass wire surface；
S4, Graphene bonding brass wire surface coating annealing liquid drying.
Used as one of the invention preferred technical scheme, graphene oxide water solution is by following weight portion into packet
Into crystalline flake graphite 30-50 parts, NaNO30.5-4 parts, concentrated sulfuric acid 15-25 parts, potassium permanganate 0.08-2.64 parts, hydrogen peroxide 4-8
Part, deionized water 0.6-50 parts.
Used as one of the invention preferred technical scheme, described graphene oxide powder needs to surpass after being dissolved in deionized water
Sonication 20min.
Used as one of the invention preferred technical scheme, described step S2 is in bonded copper with physical vaporous deposition
Silk table face coats graphene oxide solution.
Used as one of the invention preferred technical scheme, described step S3 coats graphite oxide on bonding brass wire surface
After alkene solution, wire rod is in the environment of high vacuum, and be passed through reducibility gas, handle in being 300-800 DEG C in heating-up temperature
Graphene oxide is reduced to Graphene, and is directly coated on bonding brass wire surface.
Used as one of the invention preferred technical scheme, described step S4 adds with one in annealing furnace Wire winding shaft front end
Liquid circulating apparatus, make Graphene bonding brass wire surface uniformly cover one layer during high-speed cruising and move back using submergence coating method
Fiery liquid, and in carrying out infrared drying under uniform temperature.
One or more technical schemes provided in the embodiment of the present application, at least have the following technical effect that or advantage：
The method of graphene coated copper cash of the invention not only solves that copper cash is easily aoxidized, outer wrap profile and wire haircuts is asked
Topic, and with environmental protection, increased the electric conductivity and thermal diffusivity of material the characteristics of.The present invention advances copper-based bonding wire industrialization
Process.
Brief description of the drawings
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
The accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only these
Some embodiments of invention, for those of ordinary skill in the art, without having to pay creative labor, also
Other accompanying drawings can be obtained according to these accompanying drawings.
Fig. 1 is the structural representation of the embodiment of the present application.
Specific embodiment
In order to be better understood from above-mentioned technical proposal, below in conjunction with Figure of description and specific embodiment to upper
Technical scheme is stated to be described in detail.
As shown in figure 1, a kind of Graphene bonding brass wire, including copper wire 1 and the graphene layer 2 being wrapped in outside copper wire 1, it is described
The line footpath of copper wire 1 be 0.016-0.050mm, the thickness of graphene layer 2 is 0.001-0.2um.
A kind of preparation method of Graphene bonding brass wire of the present invention, comprises the following steps：
S1, crystalline flake graphite is aoxidized, be configured to graphene oxide water solution；
S2, bonding brass wire surface coat graphene oxide solution；
S3, graphene oxide is reduced to Graphene, and is directly coated on bonding brass wire surface；
S4, Graphene bonding brass wire surface coating annealing liquid drying.
Used as one of the invention preferred technical scheme, graphene oxide water solution is by following weight portion into packet
Into crystalline flake graphite 30-50 parts, NaNO30.5-4 parts, concentrated sulfuric acid 15-25 parts, potassium permanganate 0.08-2.64 parts, hydrogen peroxide 4-8
Part, deionized water 0.6-50 parts.
Preferably, 32.57 parts of crystalline flake graphite, 3.26 parts of NaNO3,16.29 parts of the concentrated sulfuric acid, 1.95 parts of potassium permanganate, dioxygen
4.25 parts of water, 41.68 parts of deionized water.
Wherein, in the present embodiment, described graphene oxide powder needs ultrasonically treated 20min after being dissolved in deionized water.
Wherein, in the present embodiment, described step S2 is to coat oxygen on bonding brass wire surface with physical vaporous deposition
Graphite alkene solution.
Wherein, in the present embodiment, described step S3 makes line after bonding brass wire surface coating graphene oxide solution
Material is in the environment of high vacuum, and is passed through reducibility gas, is 300-800 DEG C in heating-up temperature, oxygen in preferably 450 DEG C
Graphite alkene is reduced to Graphene, and is directly coated on bonding brass wire surface.
Wherein, in the present embodiment, described step S4 adds with a liquid circulating apparatus in annealing furnace Wire winding shaft front end,
Liquid circulating apparatus include：Three phase electric machine, lower fluid reservoir, upper fluid reservoir, sparging device.Make Graphene bonding brass wire at a high speed
Upper fluid reservoir is passed through in operation, surface coats one layer of annealing liquid.The design of liquid circulating device of annealing is combined with annealing furnace,
Greatly improve the working ability and efficiency of Graphene bonding brass wire, and in carrying out infrared drying, infrared drying under uniform temperature
Device includes：Temperature control system, infrared lamp, fixing device, protector.Infrared drying temperature control is at 200-300 DEG C, and drying is warm
Degree is preferably 220 DEG C.
Graphene bonding brass wire test data（By taking 20um as an example）
| Pull-off force（cN） | 5.30 | 5.20 | 5.00 | 5.40 | 5.20 | 5.06 | 5.10 | 5.30 |
| Elongation percentage（%） | 13.27 | 12.89 | 13.32 | 12.74 | 13.57 | 14.08 | 13.85 | 13.29 |
The above, is only presently preferred embodiments of the present invention, and any formal limitation is not made to the present invention, although this
Invention is disclosed above with preferred embodiment, but is not limited to the present invention, any those skilled in the art,
Do not depart from the range of technical solution of the present invention, be equal to when making a little change or being modified to using the technology contents of the disclosure above
The Equivalent embodiments of change, as long as being the content without departing from technical solution of the present invention, according to technical spirit of the invention to the above
Any simple modification, equivalent variations and modification that embodiment is made, still fall within the range of technical solution of the present invention.
Claims (7)
1. a kind of Graphene bonding brass wire, it is characterised in that：Including copper wire（1）Be wrapped in copper wire（1）Outer graphene layer
（2）, described copper wire（1）Line footpath be 0.016-0.050mm, graphene layer（2）Thickness be 0.001-0.2um.
2. a kind of preparation method of Graphene bonding brass wire, it is characterised in that comprise the following steps：
S1, crystalline flake graphite is aoxidized, be configured to graphene oxide water solution；
S2, bonding brass wire surface coat graphene oxide solution；
S3, graphene oxide is reduced to Graphene, and is directly coated on bonding brass wire surface；
S4, Graphene bonding brass wire surface coating annealing liquid drying.
3. a kind of preparation method of Graphene bonding brass wire according to claim 2, it is characterised in that graphene oxide water
Solution is composed of the following components in parts by weight, crystalline flake graphite 30-50 parts, NaNO30.5-4 parts, concentrated sulfuric acid 15-25 parts, permanganic acid
Potassium 0.08-2.64 parts, hydrogen peroxide 4-8 parts, deionized water 0.6-50 parts.
4. a kind of preparation method of the Graphene bonding brass wire according to right wants 2, it is characterised in that described graphite oxide
Alkene powder needs ultrasonically treated 20min after being dissolved in deionized water.
5. the preparation method of a kind of Graphene bonding brass wire according to right wants 2, it is characterised in that described step S2 is
Graphene oxide solution is coated on bonding brass wire surface with physical vaporous deposition.
6. the preparation method of a kind of Graphene bonding brass wire according to right wants 2, it is characterised in that described step S3 exists
After bonding brass wire surface coating graphene oxide solution, wire rod is in the environment of high vacuum, and be passed through reducibility gas,
Heating-up temperature is directly coated on bonding brass wire surface for graphene oxide is reduced to Graphene in 300-800 DEG C.
7. the preparation method of a kind of Graphene bonding brass wire according to right wants 2, it is characterised in that described step S4 exists
Annealing furnace Wire winding shaft front end adds with a liquid circulating apparatus, and Graphene bonding brass wire surface is made in height using submergence coating method
It is uniform in fast running to cover one layer of annealing liquid, and in carrying out infrared drying under uniform temperature.
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| CN201710044328.7A CN106816423A (en) | 2017-01-21 | 2017-01-21 | A kind of Graphene bonding brass wire and preparation method thereof |
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| CN201710044328.7A CN106816423A (en) | 2017-01-21 | 2017-01-21 | A kind of Graphene bonding brass wire and preparation method thereof |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107369665A (en) * | 2017-09-22 | 2017-11-21 | 佛山慧创正元新材料科技有限公司 | A kind of preparation method of graphene bonding brass wire |
| CN107488824A (en) * | 2017-06-27 | 2017-12-19 | 深圳市远思达成科技有限公司 | A kind of preparation method of the bonding brass wire with graphene film |
| CN107523773A (en) * | 2017-06-27 | 2017-12-29 | 深圳市远思达成科技有限公司 | A kind of preparation method of the bonding filamentary silver with graphene film |
| CN108320834A (en) * | 2018-01-31 | 2018-07-24 | 西北有色金属研究院 | A kind of preparation method of Cu/C composite wires |
| CN108716114A (en) * | 2018-06-07 | 2018-10-30 | 中国人民解放军陆军工程大学 | A kind of preparation method of new copper/graphene/polymer composite fibrous |
| CN111218814A (en) * | 2018-11-26 | 2020-06-02 | 南开大学 | Graphene-metal wire composite fiber and preparation method thereof |
| CN111254312A (en) * | 2018-11-30 | 2020-06-09 | 上海电机学院 | Corrosion-resistant composite copper-based micro-wire and preparation method thereof |
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| CN102492905A (en) * | 2011-12-27 | 2012-06-13 | 铜陵金力铜材有限公司 | Copper wire annealing liquid |
| CN103887012A (en) * | 2013-12-31 | 2014-06-25 | 美特科技(苏州)有限公司 | Production method for graphene conductive wire |
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| CN101877405A (en) * | 2010-04-20 | 2010-11-03 | 华南理工大学 | Preparation method of lithium titanate-graphene combination electrode material |
| CN102492905A (en) * | 2011-12-27 | 2012-06-13 | 铜陵金力铜材有限公司 | Copper wire annealing liquid |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107488824A (en) * | 2017-06-27 | 2017-12-19 | 深圳市远思达成科技有限公司 | A kind of preparation method of the bonding brass wire with graphene film |
| CN107523773A (en) * | 2017-06-27 | 2017-12-29 | 深圳市远思达成科技有限公司 | A kind of preparation method of the bonding filamentary silver with graphene film |
| CN107369665A (en) * | 2017-09-22 | 2017-11-21 | 佛山慧创正元新材料科技有限公司 | A kind of preparation method of graphene bonding brass wire |
| CN107369665B (en) * | 2017-09-22 | 2019-04-30 | 抚州市东乡区华昶铜业有限公司 | A kind of preparation method of graphene bonding brass wire |
| CN108320834A (en) * | 2018-01-31 | 2018-07-24 | 西北有色金属研究院 | A kind of preparation method of Cu/C composite wires |
| CN108320834B (en) * | 2018-01-31 | 2019-05-21 | 西北有色金属研究院 | A kind of preparation method of Cu/C composite wire |
| CN108716114A (en) * | 2018-06-07 | 2018-10-30 | 中国人民解放军陆军工程大学 | A kind of preparation method of new copper/graphene/polymer composite fibrous |
| CN111218814A (en) * | 2018-11-26 | 2020-06-02 | 南开大学 | Graphene-metal wire composite fiber and preparation method thereof |
| CN111254312A (en) * | 2018-11-30 | 2020-06-09 | 上海电机学院 | Corrosion-resistant composite copper-based micro-wire and preparation method thereof |
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