CN106788318A - A kind of method for manufacturing FBAR on a flexible substrate - Google Patents
A kind of method for manufacturing FBAR on a flexible substrate Download PDFInfo
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- CN106788318A CN106788318A CN201611029211.3A CN201611029211A CN106788318A CN 106788318 A CN106788318 A CN 106788318A CN 201611029211 A CN201611029211 A CN 201611029211A CN 106788318 A CN106788318 A CN 106788318A
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- fbar
- film layer
- flexible substrate
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- polymethyl methacrylate
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- 239000010703 silicon Substances 0.000 claims abstract description 30
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 30
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- 239000002202 Polyethylene glycol Substances 0.000 claims description 6
- 229920001223 polyethylene glycol Polymers 0.000 claims description 6
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 6
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 6
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 6
- 239000002253 acid Substances 0.000 claims description 4
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- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
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- 235000007164 Oryza sativa Nutrition 0.000 description 1
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
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- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
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- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 208000013469 light sensitivity Diseases 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a kind of method for manufacturing FBAR on a flexible substrate, comprise the following steps：From silicon substrate, high molecular weight water soluble polymer film layer and polyimide film are coated successively on a silicon substrate；FBAR is manufactured above polyimide film；Metal column is made in FBAR Top electrode top end face；In FBAR Top electrode top end face coating polymethyl methacrylate film layer；On a silicon substrate coating using flexible substrates jelly and solidify；The total for having completed is placed in water, polyimide film is separated with silicon substrate；Metal column is removed using corrosive liquid；Said structure is placed in acetone soln, dissolving polymethyl methacrylate film layer forms air-gap；Polyimide film below removal FBAR.Manufacturing FBAR on a flexible substrate using method of the present invention being capable of boost device resonance performance, it is ensured that device fabrication quality.
Description
Technical field
The invention belongs to micro-electromechanical system field, more particularly to one kind to manufacture film bulk acoustic on a flexible substrate humorous
Shake the method for device.
Background technology
FBAR is a kind of new mems device for developing in recent years.FBAR
Basic structure be made up of piezoelectric membrane and electrode, working frequency reaches several GHzs.The operation principle of the device is to utilize
The piezo-electric effect of piezoelectric membrane in device, mechanical energy is converted to by the electric energy of input, in the form of a sound wave the shape in piezoelectric membrane
Into standing wave resonance.FBAR has relatively low insertion loss, bigger power capacity, Q values higher and can
Integrated, miniaturization advantage.Thus, compared with traditional SAW resonator and ceramic resonator, film bulk acoustic resonator
Device presents huge performance advantage.Current such device has been applied to build gigahertz band radio-frequency filter and Gao Ling
Quick biochemical sensor aspect.Manufacture FBAR technique be based on silicon-based semiconductor manufacturing technology,
Therefore such device is mainly manufactured and applied on a silicon substrate at present.
On the other hand, the development of fexible film electronics in recent years manufactures various work(on a flexible substrate in the urgent need to developing
The technology of energy electronic device.FBAR is used as a kind of resonating device with microsize, high q-factor, Neng Gouji
Into in high-speed flexible thin film circuit as high-frequency generator high sensor Core Feature device, in wearable electricity
There is huge potential application in subsystem.At present, the main method of manufacture FBAR has two on a flexible substrate
Class.
The Chinese patent of the one class method such as A of Publication No. CN 103929149, a kind of flexible piezoelectric film bulk acoustic resonator
Device and preparation method thereof.The method direct depositions of bottom electrode, piezoelectric membrane and top electrode layer on a flexible substrate, constitute thin-film body
Acoustic resonator.
Such as in March, 2015 of another kind of method is published in periodical SCIENTIFIC REPORTS the 5th volumes page 9510 of paper
“Film bulk acoustic resonators integrated on arbitrary substrates using a
polymer support layer”.The method is mainly comprised the following steps：(1) groove is etched on a silicon substrate；(2) directly in silicon
Coating polyimide on substrate；(3) FBAR is manufactured in polyimide surface；(4) by device on a silicon substrate
Peeled off.
The major defect of above-mentioned technical proposal is that manufactured FBAR has side directly contact soft
Property substrate.By the viscous damping property to mechanical oscillation that flexible material has in itself, the bulk acoustic wave meeting in piezoelectric membrane
The severe attrition in flexible substrates, so as to cause device performance to be decayed.In addition, for first kind method, flexible substrates it is hard
Degree is poor, and device manufacture is directly carried out on a flexible substrate, and its machining accuracy and film quality are affected.To Equations of The Second Kind side
Method, carries out device and prepares the problem that can solve the problem that machining accuracy and film quality, but energy on a silicon substrate after coating polyimide
Enough flexible substrates species for using are restricted.Dimethyl siloxane for example commonly using, with good biological compatibility
(PDMS), the thermal coefficient of expansion with institute deposition materials differs greatly, and the residual stress for being easily caused film is excessive.By device from silicon
The process peeled off on substrate is also easily damaged to part of devices.
It thus is seen that prior art awaits further improving
The content of the invention
The present invention is the weak point for avoiding above-mentioned prior art from existing, being capable of boost device resonance there is provided one kind
The method for manufacturing FBAR on a flexible substrate of device fabrication quality, can be ensured.
The technical solution adopted in the present invention is：
A kind of method for manufacturing FBAR on a flexible substrate, comprises the following steps：
Step 1, from silicon substrate, coats high molecular weight water soluble polymer film layer and gathers successively from bottom to top on a silicon substrate
Acid imide film layer；
Step 2, manufactures FBAR above polyimide film, and the FBAR includes upper
Electrode and piezoelectric membrane；
Step 3, metal column is made in the Top electrode top end face of FBAR；
Step 4, in the Top electrode top end face coating polymethyl methacrylate film layer of FBAR；
Step 5, on a silicon substrate coating using flexible substrates jelly and solidify, make the film bulk acoustic resonator
Device, metal column, polymethyl methacrylate film layer are integrally placed in flexible substrates；
Step 6, the above-mentioned total for having completed is placed in water, and makes polyimide film, together with positioned at poly-
FBAR, metal column, polymethyl methacrylate film layer and flexible substrates and silicon lining above acid imide film layer
Bottom separates；
Step 7, metal column is removed using corrosive liquid；
Step 8, by polyimide film, together with the FBAR above polyimide film, poly- first
Base methyl acrylate film layer and flexible substrates are integrally placed in acetone soln, dissolving polymethyl methacrylate film layer, form empty
Air gap；
Step 9, the polyimide film below removal FBAR.
In the step 1, high molecular weight water soluble polymer film layer includes polyvinyl alcohol, polyethylene glycol, polyacrylamide, poly-
Acrylamide or polyvinylpyrrolidone, and the thickness of high molecular weight water soluble polymer film layer is 1 micron to 5 microns.
In the step 1, the thickness of polyimide film is 0.5 micron to 2 microns.
In the step 2, Top electrode has two pieces, and two pieces of Top electrodes are placed in parallel.
In the step 2, FBAR also includes bottom electrode, and Top electrode, piezoelectric membrane, bottom electrode are from upper
Under stack successively.
In the step 3, the material of metal column is different from the upper electrode material of FBAR, the horizontal stroke of metal column
Less than 1/10th of FBAR Top electrode cross-sectional area, the top of metal column is located at outside flexible substrates sectional area
Side.
In the step 4, polymethyl methacrylate film layer cross-sectional area is horizontal with the Top electrode of FBAR
Sectional area is identical, and the thickness of polymethyl methacrylate film layer is 500 nanometers to 2 microns.
In the step 5, flexible substrates include dimethyl siloxane, polyethylene terephthalate or polyimides.
In the step 6, the temperature of water is 40 DEG C~70 DEG C.
In the step 7, the corrosive liquid of selection does not produce corruption to the Top electrode of flexible substrates and FBAR
Erosion is acted on；In the step 8, when polymethyl methacrylate film layer is dissolved in acetone soln, can be accelerated using supplementary means
Dissolving, the supplementary means includes stirring and/or ultrasound.
By adopting the above-described technical solution, having the beneficial effect that acquired by the present invention：
1st, discharged as hanging from silicon substrate using the FBAR manufactured by method of the present invention
Structure, improves device resonance performance.
2nd, the present invention remanufactures the process sequence of substrate using device is first manufactured, and device fabrication does not receive flexible base material
Influence, hereby it is ensured that device fabrication quality, while existing various flexible base materials can be used.
3rd, using method of the present invention, the silicon chip used in device manufacturing processes is not damaged, after can cleaning
Reuse, reduce manufacturing cost.
4th, using method of the present invention, device uses sacrifice layer from the separation process of silicon substrate, and has polyimides
Layer is not damaged as protection, device architecture.
Brief description of the drawings
Fig. 1 is shown using a kind of typical film bulk acoustic resonator structure produced by the present invention.
Fig. 2 is shown using another typical film bulk acoustic resonator structure produced by the present invention.
Fig. 3 to show and manufacture thin-film body in dimethyl siloxane (PDMS) flexible substrates using method of the present invention
The key step of acoustic resonator.
Fig. 4 shows manufactured FBAR top view in embodiments of the invention.
Fig. 5 is shown using the return loss test knot of the FBAR manufactured by embodiments of the invention
Really.
Specific embodiment
The present invention is described in further detail with specific embodiment below in conjunction with the accompanying drawings, but the present invention is not limited to
These embodiments.
FBAR present invention can apply to manufacture various structures, to the material of FBAR
Material, structure, electrode shape are not required.Fig. 1 and Fig. 2 sets forth using two kinds of typical thin films body sound produced by the present invention
Wave resonator structure.FBAR as shown in Figure 1, it is by piezoelectric membrane 101 and is placed in piezoelectric membrane 101
The sandwich-like structure that the Top electrode 102 of both sides, bottom electrode 103 are constituted.FBAR as shown in Figure 2, it is
The transverse electric field incentive structure being made up of piezoelectric membrane 101 and the Top electrode 102 being parallel to each other.The thin-film body of above two structure
Acoustic resonator can all be manufactured using the present invention.Wherein, the shape of Top electrode and bottom electrode can be square, circular, ring
Shape, slotting finger-type or other irregular shapes etc..Piezoelectric membrane 101 can be the institute for being applied to FBAR at present
There are piezoelectric, such as zinc oxide, aluminium nitride, lead zirconate titanate.Being applicable flexible substrates of the invention mainly has dimethyl siloxane
(PDMS) the substrate material that, polyethylene terephthalate (PET) or polyimides (PI) etc. are commonly used in flexible electronic industry
Material.
FBAR is manufactured in dimethyl siloxane (PDMS) flexible substrates with as shown in Figure 3 below
Application method of the invention is illustrated as a example by key step.In the present embodiment, the FBAR to be manufactured is Sanming City
Shape structure is controlled, the material of wherein Top electrode 102 and bottom electrode 103 is molybdenum, and thickness is 150 nanometers.The material of piezoelectric membrane is
Aluminium nitride, thickness is 1 micron.The thickness of flexible substrates is 50 microns.
The step of manufacturing above-mentioned FBAR is as follows：
Step 1, coats high molecular weight water soluble polymer film layer and polyimide film successively from bottom to top on a silicon substrate.
High molecular weight water soluble polymer film layer functions as the sacrifice layer that device is peeled off from silicon substrate, poly- above it
Acid imide film layer plays a part of to protect high molecular weight water soluble polymer film layer in subsequent technique.It is water-soluble in specific implementation
Polymer membrane layer can be polyvinyl alcohol (PVA), polyethylene glycol (PEG), polyacrylamide (PAM), polyacrylamide
(PAM), one kind in polyvinylpyrrolidone (PVP), its thickness is appointing in 1 micron, 5 microns or 1 micron to 5 micrometer ranges
Meaning numerical value is, it is necessary to explanation is that the material of high molecular weight water soluble polymer film layer is not limited to the above-mentioned polyvinyl alcohol for enumerating
(PVA), this is several for polyethylene glycol (PEG), polyacrylamide (PAM), polyacrylamide (PAM), polyvinylpyrrolidone (PVP)
Kind, other satisfactory materials can also be used.The thickness of polyimide film is 0.5 micron, 2 microns or 0.5 micron to 2
Any number in micrometer range.The method of coating high molecular weight water soluble polymer film layer and polyimide film can be using rotation
Conventional organic membrane preparation methods such as painting, evaporation or silk-screen printing.To protect the water solubility of high molecular weight water soluble polymer film layer,
Polyimide film can not carry out imidization, and general its heat treatment temperature should be less than 150 degrees Celsius.
In the present embodiment, 2 microns of polyvinyl alcohol film layer is made as high molecular weight water soluble polymer using spin-coating method
Film layer and 1 micron of polyimide film.The technique of spin coating polyvinyl alcohol film layer is：Polyvinyl alcohol using 40% concentration is water-soluble
Liquid, 3000 revs/min of spin coatings 30 seconds, 100 degrees Celsius of hot plates are processed 5 minutes.The technique of spin-on polyimide film layer is：Use light
Quick property polyimides jelly, 5000 revs/min of spin coatings 30 seconds, 130 degrees Celsius of hot plates are processed 5 minutes.Then the use of power is 30
The ultraviolet light of milliwatt/square centimeter irradiates 30 seconds to polyimide film, prevents it aobvious used in subsequent step from being dissolved in
Shadow liquid.
Step 2, manufactures film bulk acoustic resonator structure above polyimide film.
In specific implementation, film bulk acoustic resonator structure can be manufactured using general semiconductor technology method,
Main technique includes, sputtering or evaporation electrode, and the figure of electrode is carried out using photoetching or Lift-off techniques (stripping technology)
Change；Sputtering prepares piezoelectric membrane and carries out the graphical of piezoelectric membrane using dry or wet.
In the present embodiment, the Top electrode and bottom electrode of FBAR are using d.c. sputtering method system
Make, Lift-off techniques (stripping technology) are patterned.Piezoelectric membrane is manufactured using RF-reactively sputtered titanium method, is used
Aluminium target, sputtering atmosphere is the mixed gas of argon gas and nitrogen.Aluminum nitride piezoelectric film uses the reactive ion etching of chlorine-based gas
Method is patterned.
Step 3, metal column is made in the top end face of the Top electrode of FBAR；
The metal column will form through hole to discharge film bulk acoustic resonator structure in subsequent step.In specific implementation, it is
Ensure not produce the Top electrode of FBAR destruction in subsequent corrosion metal column step, the material of metal column with it is thin
The upper electrode material of film body acoustic resonator is different.There is enough mechanical strengths to ensure the device that manufacture is completed simultaneously, it is rotten
The through hole produced after erosion can not be excessive, it is desirable to which the cross-sectional area of metal column is less than FBAR Top electrode cross-sectional area
1/10th.To ensure that corrosive liquid can smoothly enter from flexible substrates outside, the top end face of metal column should be located at flexible base
The outside at bottom.According to required different size and height, metal column can using thickness glue Lift-off techniques (stripping technology) or
The method of micro- electroforming is manufactured.
In the present embodiment, the material of metal column is copper, is highly 100 microns, is made using the method for micro- electroforming,
Its technique is：Copper seed layer is sputtered in FBAR upper electrode surface first, thickness is 100 nanometers；Coat 100 micro-
The positive photoresist of rice is simultaneously patterned, and exposes metal columnar region；Electroplated in standard copper electroplating liquid；Removal photoresist
And dry.
Step 4, in the top end face coating polymethyl methacrylate film layer of FBAR Top electrode；
The sacrifice layer that polymethyl methacrylate film layer discharges as film bulk acoustic resonator structure in subsequent step.
In specific implementation, polymethyl methacrylate film layer cross-sectional area and FBAR Top electrode cross-sectional area phase
Together.To ensure that air-gap after device release has the mechanical strength of enough height and device, polymethyl methacrylate film layer
Thickness be any number in 500 nanometers, 2 microns or 500 nanometers to 2 micrometer ranges.The method for coating the film layer can be adopted
With conventional organic membrane preparation methods such as spin coating, evaporation or silk-screen printings.
In the present embodiment, carry out spin coating using light sensitivity polymethyl methacrylate jelly and make the film layer.Concrete technology
For：3000 revs/min of spin coatings, 120 degrees Celsius of hot plates are processed 3 minutes, the use of power are then the ultraviolet of 30 milliwatts/square centimeter
Light carries out photoetching.
Step 5, on a silicon substrate coating using flexible substrates jelly and solidify；
In specific implementation, can be flexible using conventional organic membrane preparation method manufacture such as spin coating, evaporation or silk-screen printing
Substrate.To ensure that the multiple organic film dissolubilities coated in preceding step will not occur serious change, the solidification of flexible substrates
Temperature generally should be smaller than 150 degrees Celsius.
In the present embodiment, using dimethyl siloxane (PDMS) jelly containing curing agent, two step spin-coating methods make flexible
Substrate.Concrete technology is：300 revs/min of first step spin coating spin coating 10 seconds；1000 revs/min of second step spin coating spin coating 30 seconds；80
Degree Celsius hot plate is processed 15 minutes.
Step 6, total is placed in water, and device is separated with silicon substrate；
In this step, the high molecular weight water soluble polymer film layer below FBAR will be dissolved in the water,
So that device is separated with silicon substrate.In specific implementation, to accelerate separation process, according to die size and device unit size,
Usable temperature is that the hot water of any number in the range of 40 degrees Celsius, 50 degrees Celsius, 70 degrees Celsius or 40 DEG C to 70 DEG C is shelled
From.To prevent peeling off posterior synechia, drum process or paster method can be used to be separated.
In the present embodiment, silicon substrate is 4 inch silicon wafers, and device unit size is 300 microns × 300 microns, uses roller
Separated in 60 degrees Celsius of hot water.
Step 7, metal column is removed using corrosive liquid；
To ensure that device other parts are not damaged, the corrosive liquid for being used can not be humorous to flexible substrates and film bulk acoustic
Device Top electrode of shaking produces corrosiveness.In specific implementation, according to the corresponding corrosive liquid of metal column material selection, wet method is carried out rotten
Erosion.
In the present embodiment, copper metal post is corroded using 10% iron chloride and 1% hydrochloric acid mixed solution.Etch
Afterwards, there is the through hole in flexible substrates.
Step 8, device is placed in acetone soln, dissolving polymethyl methacrylate film layer, forms air-gap；
In specific implementation, the supplementary means such as stirring, ultrasound can be used to accelerate course of dissolution.
After the completion of the step, FBAR is discharged from silicon substrate, forms hanging structure.
Step 9, the polyimide film below removal FBAR；
It is general polyimide film is performed etching using oxygen plasma to ensure that device architecture is complete in specific implementation.
In the present embodiment, etching technics is：Oxygen pressure is 1 Pascal, and power is 3 watts every square centimeter, and etch period is 5 minutes.
Fig. 4 shows manufactured FBAR top view in the embodiment of the present invention.Fig. 5 is shown using this
The return loss test result of manufactured FBAR in inventive embodiments.By Fig. 5 it can be seen that, using this
The FBAR that the described method of invention is manufactured in dimethyl siloxane (PDMS) flexible substrates can be realized good
Good work, when flexible substrates do not bend, resonant frequency is 2.453 GHzs, and return loss is 5.774dB.Flexible substrates are sent out
After raw bending, resonant frequency is changed into 2.429 GHzs, and return loss is 5.187.
The part do not addressed in the present invention uses or uses for reference prior art to be capable of achieving.
Specific embodiment described herein is only to spiritual example explanation of the invention.Belonging to of the invention
Those skilled in the art can make various modifications or supplement to described specific embodiment or use what is be similar to
Mode is substituted, but without departing from spirit of the invention or surmounts scope defined in appended claims.
Claims (10)
1. it is a kind of on a flexible substrate manufacture FBAR method, it is characterised in that comprise the following steps：
Step 1, from silicon substrate, coating high molecular weight water soluble polymer film layer and polyamides are sub- successively from bottom to top on a silicon substrate
Amine film layer；
Step 2, manufactures FBAR above polyimide film, and the FBAR includes Top electrode
And piezoelectric membrane；
Step 3, metal column is made in the Top electrode top end face of FBAR；
Step 4, in the Top electrode top end face coating polymethyl methacrylate film layer of FBAR；
Step 5, on a silicon substrate coating using flexible substrates jelly and solidify, make the FBAR, gold
Category post, polymethyl methacrylate film layer are integrally placed in flexible substrates；
Step 6, the above-mentioned total for having completed is placed in water, and makes polyimide film, together with sub- positioned at polyamides
FBAR, metal column, polymethyl methacrylate film layer and flexible substrates and silicon substrate point above amine film layer
From；
Step 7, metal column is removed using corrosive liquid；
Step 8, by polyimide film, together with the FBAR above polyimide film, poly- methyl-prop
E pioic acid methyl ester film layer and flexible substrates are integrally placed in acetone soln, dissolving polymethyl methacrylate film layer, form air-gap；
Step 9, the polyimide film below removal FBAR.
2. a kind of method for manufacturing FBAR on a flexible substrate according to claim 1, its feature exists
In in the step 1, high molecular weight water soluble polymer film layer includes polyvinyl alcohol, polyethylene glycol, polyacrylamide, polypropylene
Acid amides or polyvinylpyrrolidone, and the thickness of high molecular weight water soluble polymer film layer is 1 micron to 5 microns.
3. a kind of method for manufacturing FBAR on a flexible substrate according to claim 1, its feature exists
In in the step 1, the thickness of polyimide film is 0.5 micron to 2 microns.
4. a kind of method for manufacturing FBAR on a flexible substrate according to claim 1, its feature exists
In in the step 2, Top electrode has two pieces, and two pieces of Top electrodes are placed in parallel.
5. a kind of method for manufacturing FBAR on a flexible substrate according to claim 1, its feature exists
In, in the step 2, FBAR also include bottom electrode, Top electrode, piezoelectric membrane, bottom electrode from top to bottom according to
It is secondary to stack.
6. a kind of method for manufacturing FBAR on a flexible substrate according to claim 1, its feature exists
In in the step 3, the material of metal column is different from the upper electrode material of FBAR, the cross section of metal column
Less than 1/10th of FBAR Top electrode cross-sectional area, the top of metal column is located at flexible substrates outside to product.
7. a kind of method for manufacturing FBAR on a flexible substrate according to claim 1, its feature exists
In the polymethyl methacrylate film layer cross-sectional area described in the step 4 is horizontal with the Top electrode of FBAR
Sectional area is identical, and the thickness of polymethyl methacrylate film layer is 500 nanometers to 2 microns.
8. a kind of method for manufacturing FBAR on a flexible substrate according to claim 1, its feature exists
In the flexible substrates described in the step 5 include dimethyl siloxane, polyethylene terephthalate or polyimides.
9. a kind of method for manufacturing FBAR on a flexible substrate according to claim 1, its feature exists
In in the step 6, the temperature of water is 40 DEG C~70 DEG C.
10. a kind of method for manufacturing FBAR on a flexible substrate according to claim 1, its feature exists
In in the step 7, the corrosive liquid of selection does not produce corrosion to make the Top electrode of flexible substrates and FBAR
With；In the step 8, when polymethyl methacrylate film layer is dissolved in acetone soln, dissolving can be accelerated using supplementary means,
The supplementary means includes stirring and/or ultrasound.
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