CN106785871A - Synthesize the device and method of white light based on RGB semiconductor laser - Google Patents
Synthesize the device and method of white light based on RGB semiconductor laser Download PDFInfo
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- CN106785871A CN106785871A CN201710135929.9A CN201710135929A CN106785871A CN 106785871 A CN106785871 A CN 106785871A CN 201710135929 A CN201710135929 A CN 201710135929A CN 106785871 A CN106785871 A CN 106785871A
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- laser
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/23—Arrangements of two or more lasers not provided for in groups H01S3/02 - H01S3/22, e.g. tandem arrangements of separate active media
Abstract
The present invention discloses a kind of device and method for synthesizing white light based on RGB semiconductor laser, including：At least two pairs red laser device assemblies, at least one pair of blue laser device assembly and at least one pair of green laser device assembly；Wherein, a pair of red laser device assemblies synthesize a branch of red laser and overlap to form the first light beam with a branch of blue laser of a pair of blue laser device assembly synthesis, another to synthesize another beam red laser to red laser device assembly and overlap to form the second light beam with the green laser of a pair of green laser device assembly synthesis；First light beam, the second light beam are coupled parallel through coupled lens and are exported to form white laser.Relative to tradition using the white laser for concentrating benefit to export, the complexity of device is simplified.
Description
Technical field
The present invention relates to laser technology field, in particular, it is related to a kind of based on the synthesis of RGB semiconductor laser
The device and method of white light.
Background technology
Be applied to many fields using laser synthesis white light, for example laser display, laser lighting, light of stage and
Outdoor lighting engineering etc..
Mode currently with laser synthesis white light is mainly synthesized by tri-color laser, for example, Publication No.
The Chinese invention patent of CN204731497U discloses a kind of white light laser, including three color semiconductor laser diodes, laser
Colimated light system, achromatism coupling microscope group, fiber-optical socket, laser base.For the high power laser of demand, usually
Coupled by the white light for synthesizing, but this structure causes the structure of laser complex, is not easy to the reduction of cost.
The content of the invention
The technical problems to be solved by the invention be to provide a kind of simple structure, cost it is lower based on RGB semiconductor
Laser synthesizes the device of white light.
The purpose of the present invention is achieved through the following technical solutions：It is a kind of to be synthesized based on RGB semiconductor laser
The device of white light, including：
At least two pairs red laser device assemblies, at least one pair of blue laser device assembly and at least one pair of green laser device assembly；
Wherein, a pair of red laser device assemblies synthesize a branch of red lasers and a branch of indigo plants synthesized with a pair of blue laser device assemblies
Color laser overlaps to form the first light beam, it is another red laser device assembly is synthesized another beam red laser and with a pair of green lasers
The green laser of device assembly synthesis overlaps to form the second light beam；
First light beam, the second light beam are coupled parallel through coupled lens and are exported to form white laser.
Preferably, red laser device assembly includes described in each pair：First red light semiconductor laser, the second red light semiconductor
Laser, respectively the first collimation corresponding with first red light semiconductor laser and the second red light semiconductor laser are saturating
Mirror is corresponding with the first red light semiconductor laser with the feux rouges half-wave plate that the first red light semiconductor laser 101a is correspondingly arranged
The first speculum and the first light splitting member corresponding with second red light semiconductor laser for setting, described first is anti-
Penetrate mirror by the red laser that first red light semiconductor laser is launched reflex on first light splitting member and with it is described
The red laser of the second red light semiconductor laser transmitting synthesizes a branch of red laser at first light splitting member.
Preferably, first collimation lens is coated with the anti-reflection film of 638nm, and first speculum is coated with the height of 638nm
Anti- film.
Preferably, first light splitting member is light splitting piece or Amici prism.
Preferably, green laser device assembly includes described in each pair：First green light semiconductor, the second Green-emitting semiconductor
Laser, respectively the second collimation corresponding with first green light semiconductor and the second green light semiconductor are saturating
The green glow half-wave plate and the first green light semiconductor that mirror and the first green light semiconductor are correspondingly arranged are correspondingly arranged
The second speculum and the second light splitting member corresponding with second green light semiconductor, second speculum
The green laser that first green light semiconductor is launched is reflexed on second light splitting member and with described second
The green laser of green light semiconductor transmitting synthesizes a branch of green laser at second light splitting member.
Preferably, first collimation lens is coated with the anti-reflection film of 520nm, and first speculum is coated with the height of 520nm
Anti- film.
Preferably, blue laser device assembly includes described in each pair：First blue semiconductor laser, the second blue-light semiconductor
Laser, respectively the 3rd collimation corresponding with first blue semiconductor laser and the second blue semiconductor laser are saturating
The blue light half-wave plate and the first blue semiconductor laser that mirror and the first blue semiconductor laser are correspondingly arranged are correspondingly arranged
The 3rd speculum and the 3rd light splitting member corresponding with second blue semiconductor laser, the 3rd speculum
The blue laser that first blue semiconductor laser is launched is reflexed on the 3rd light splitting member and with described second
The blue laser of blue semiconductor laser transmitting synthesizes a branch of blue laser at the 3rd light splitting member.
Preferably, the 3rd collimation lens is coated with the anti-reflection film of 465nm, and first speculum is coated with the height of 465nm
Anti- film.
Preferably, the red laser that the pair of red laser device assembly synthesizes synthesizes with the blue laser device assembly
Blue laser is reflexed to by one or more speculums and synthesizes first light beam on a transflection mirror；It is described another sharp to feux rouges
The green laser that the red laser of light device assembly synthesis synthesizes with the green laser device assembly reflects also by one or more
Mirror is reflexed to and synthesizes second light beam on the transflection mirror.
A kind of method that high-power white laser is exported based on RGB semiconductor laser, including step：
S1, sets at least two pairs red laser device assemblies, at least one pair of blue laser device assembly and at least one pair of green laser
Device assembly；
S2, the blue laser that a pair of laser assemblies synthesize a branch of red lasers with a pair of blue laser device assemblies synthesize is overlapped
The first light beam is formed, is synthesized another another beam red laser to red laser device assembly and is closed with a pair of green laser device assemblies
Into green laser overlap to form the second light beam；
S3, the first light beam and second light beam are carried out to couple output white laser.
The benefit that the present invention brings is：By at least provided with two pairs of red laser device assemblies and a pair of blue laser groups
Part and a pair of green laser device assemblies, wherein, a pair of red laser device assemblies synthesize a branch of red lasers and with a pair of blue lights
A branch of blue laser of laser assembly synthesis overlaps to form the first light beam, another to synthesize another Shu Hong to red laser device assembly
The green laser that color laser simultaneously synthesizes with a pair of green laser device assemblies overlaps to form the second light beam, recycles the first light beam and the
Two light beams synthesize white laser by coupled lens, so, relative to tradition using the white laser for concentrating benefit to export, simplify
The complexity of device.
Brief description of the drawings
Fig. 1 is the structural representation of the high-power laser device of the embodiment of the present invention.
Specific embodiment
The preferred embodiment of the present invention is described below, those of ordinary skill in the art are possible to according to hereinafter described with this
The correlation technique in field is realized, and can be more clearly understood that innovation of the invention and the benefit brought.
Embodiment one
It is as shown in Figure 1 a kind of device for synthesizing white light based on RGB semiconductor laser described in the present embodiment, including：Extremely
Few two pairs of red laser device assemblies, at least one pair of blue laser device assembly and at least one pair of green laser device assembly；Wherein, one
A branch of red laser is synthesized to red laser device assembly（In figure red laser is represented by the solid line of optical splitter 105）And with a pair
A branch of blue laser of blue laser device assembly synthesis（Figure chain lines represent blue laser）Overlap and form the first light beam, it is another
Synthesize another beam red laser and the green lasers synthesized with a pair of green laser device assemblies to red laser device assembly（It is empty in figure
Line represents green laser）Overlap and form the second light beam；First light beam, the second light beam carry out coupling parallel through coupled lens 5
Merge output and form white laser.Relative to tradition using the white laser for concentrating benefit to export, the complexity of device is simplified.
In the present embodiment, red laser device assembly includes described in each pair：First red light semiconductor laser 101a, second
Red light semiconductor laser 101b, respectively with the first red light semiconductor laser 101a and the second red light semiconductor laser
The feux rouges half-wave plate 103 that the corresponding red light semiconductor laser 101a of first collimation lens 102 and first of 101b are correspondingly arranged
（That is 1/2 wave plate of 638nm）The first speculum 104 for being correspondingly arranged with the first red light semiconductor laser 101a and with institute
Corresponding first light splitting members 105 of the second red light semiconductor laser 101b are stated, first speculum 104 is red by described first
The red laser of optical semiconductor laser 101a transmittings is reflexed on first light splitting member 105 and with second feux rouges partly
The red laser of conductor laser 101b transmittings synthesizes a branch of red laser at first light splitting member 105.The present embodiment
In, each pair red laser includes two semiconductor lasers, so as to increased the power of the feux rouges of output, in follow-up synthesis
During white laser, powerful white laser can be directly exported.
In the present embodiment, improved as one kind, first collimation lens 102 is coated with the anti-reflection film of 638nm, so may be used
To improve the pure degree of red laser, brightness, it is ensured that the white light of output has enough pure degree, brightness.As further
Optimization, first speculum 104 is coated with the high-reflecting film of 638nm, so that it is guaranteed that the efficiency of reflection red laser, reduces light reflection
The loss of process.
In the present embodiment, green laser device assembly includes described in each pair：First green light semiconductor 201a, second
Green light semiconductor 201b, respectively with the first green light semiconductor 201a and the second green light semiconductor
The green glow half-wave plate 203 that the corresponding green light semiconductor 201a of second collimation lens 202 and first of 201b are correspondingly arranged
（That is 1/2 wave plate of 520nm）The second speculum 204 for being correspondingly arranged with the first green light semiconductor 201a and with institute
Corresponding second light splitting members 205 of the second green light semiconductor 201b are stated, second speculum 204 is green by described first
The green laser of optical semiconductor laser 201a transmittings is reflexed on second light splitting member 205 and with second green glow partly
The green laser of conductor laser 201b transmittings synthesizes a branch of green laser at second light splitting member 205.
In the present embodiment, improved as one kind, first collimation lens is coated with the anti-reflection film of 520nm, so can be with
Improve the pure degree of green laser, brightness, it is ensured that the white light of output has enough pure degree, brightness.First speculum
The high-reflecting film of 520nm is coated with, so that it is guaranteed that the efficiency of reflection red laser, reduces the loss of light reflection process.
In the present embodiment, blue laser device assembly includes described in each pair：First blue semiconductor laser 301a, second
Blue semiconductor laser 301b, respectively with the first blue semiconductor laser 301a and the second blue semiconductor laser
The blue light half-wave plate 303 that corresponding 3rd collimation lenses 302 of 301b and the first blue semiconductor laser 301a are correspondingly arranged
（That is 1/2 wave plate of 465nm）The 3rd speculum 304 that is correspondingly arranged with the first blue semiconductor laser 301a and with institute
Corresponding 3rd light splitting members 305 of the second blue semiconductor laser 301b are stated, the 3rd speculum 304 is blue by described first
The blue laser of optical semiconductor laser 301a transmittings is reflexed on the 3rd light splitting member 305 and with second blue light partly
The blue laser of conductor laser 301b transmittings synthesizes a branch of blue laser at the 3rd light splitting member 305.
In the present embodiment, improved as one kind, the 3rd collimation lens is coated with the anti-reflection film of 465nm, described first
Speculum is coated with the high-reflecting film of 465nm.
In the present embodiment, as a example by being provided with two pairs of laser aids of red laser device assembly, one pair of which feux rouges swashs
The red laser of light device assembly synthesis passes through one or more speculums with the blue laser that the blue laser device assembly synthesizes
Reflex to and synthesize first light beam on a transflection mirror；And another red laser to the synthesis of red laser device assembly is green with described
The green laser of light laser component synthesis is reflexed to also by one or more speculums and synthesizes described the on the transflection mirror
Two light beams.Specifically, as shown in figure 1, the red laser of first pair of red laser device assembly synthesis is penetrated from the first light splitting member 105
Go out, entered into transflection mirror 4 by transfer speculum 106a, 106c, the blue laser of blue laser device assembly synthesis is from the 3rd
Light splitting member 305 is projected, and enter into transflection mirror 4 by transfer speculum 306 synthesizes the first light beam, green laser with red laser
Device assembly synthesis green laser projected from the second light splitting member 205, by transfer speculum 206 enter into transflection mirror 4 with it is red
The light beam of color Laser synthesizing second, by after synthesis and first parallel the second light beam of light beam is entered into and is coupled into coupled lens 5
Beam of laser, wherein, the laser aid is additionally provided with a fiber coupling interface for incoming fiber optic 6, and can be defeated by optical fiber 6
Go out the white laser.Wherein, described transflection mirror 4 can transmit the blue laser of the green laser and 465nm of 520nm,
And can reflect the red laser of 638nm,
In the present embodiment, first light splitting member 105, the second light splitting member 205 and the 3rd light splitting member 305 can be
Light splitting piece or Amici prism.
Embodiment two
Based on above example, the present invention is also provided and a kind of exports high-power white laser based on RGB semiconductor laser
Method, including step：
S1, sets at least two pairs red laser device assemblies, at least one pair of blue laser device assembly and at least one pair of green laser
Device assembly；
S2, the blue laser that a pair of laser assemblies synthesize a branch of red lasers with a pair of blue laser device assemblies synthesize is overlapped
The first light beam is formed, is synthesized another another beam red laser to red laser device assembly and is closed with a pair of green laser device assemblies
Into green laser overlap to form the second light beam；
S3, the first light beam and second light beam are carried out to couple output white laser.
Above content is to combine specific preferred embodiment further description made for the present invention, it is impossible to assert
Specific implementation of the invention is confined to these explanations.For general technical staff of the technical field of the invention,
On the premise of not departing from present inventive concept, some simple deduction or replace can also be made, these should all be considered as belonging to this hair
Bright protection domain.
Claims (10)
1. it is a kind of based on RGB semiconductor laser synthesize white light device, it is characterised in that including：
At least two pairs red laser device assemblies, at least one pair of blue laser device assembly and at least one pair of green laser device assembly；
Wherein, a pair of red laser device assemblies synthesize a branch of red lasers and a branch of indigo plants synthesized with a pair of blue laser device assemblies
Color laser overlaps to form the first light beam, it is another red laser device assembly is synthesized another beam red laser and with a pair of green lasers
The green laser of device assembly synthesis overlaps to form the second light beam；
First light beam, the second light beam are coupled parallel through coupled lens and are exported to form white laser.
2. it is as claimed in claim 1 to be based on the device that RGB semiconductor laser synthesizes white light, it is characterised in that each pair institute
Stating red laser device assembly includes：First red light semiconductor laser, the second red light semiconductor laser, respectively with described first
Red light semiconductor laser and corresponding first collimation lens of the second red light semiconductor laser and the first red light semiconductor laser
The first speculum that the feux rouges half-wave plate and the first red light semiconductor laser that device is correspondingly arranged are correspondingly arranged and with it is described
Corresponding first light splitting member of second red light semiconductor laser, first speculum is by the first red light semiconductor laser
The red laser of device transmitting reflexes on first light splitting member and red with what second red light semiconductor laser was launched
Color laser synthesizes a branch of red laser at first light splitting member.
3. the as claimed in claim 2 device for synthesizing white light based on RGB semiconductor laser, it is characterised in that described the
Collimating lens are coated with the anti-reflection film of 638nm, and first speculum is coated with the high-reflecting film of 638nm.
4. the as claimed in claim 2 device for synthesizing white light based on RGB semiconductor laser, it is characterised in that described the
One light splitting member is light splitting piece or Amici prism.
5. it is as claimed in claim 1 to be based on the device that RGB semiconductor laser synthesizes white light, it is characterised in that each pair institute
Stating green laser device assembly includes：First green light semiconductor, the second green light semiconductor, respectively with described first
Green light semiconductor and corresponding second collimation lens of the second green light semiconductor and the first Green-emitting semiconductor laser
The second speculum that the green glow half-wave plate and the first green light semiconductor that device is correspondingly arranged are correspondingly arranged and with it is described
Corresponding second light splitting member of second green light semiconductor, second speculum is by the first Green-emitting semiconductor laser
The green laser of device transmitting reflexes on second light splitting member and green with what second green light semiconductor was launched
Color laser synthesizes a branch of green laser at second light splitting member.
6. the as claimed in claim 5 device for synthesizing white light based on RGB semiconductor laser, it is characterised in that described the
Collimating lens are coated with the anti-reflection film of 520nm, and first speculum is coated with the high-reflecting film of 520nm.
7. it is as claimed in claim 1 to be based on the device that RGB semiconductor laser synthesizes white light, it is characterised in that each pair institute
Stating blue laser device assembly includes：First blue semiconductor laser, the second blue semiconductor laser, respectively with described first
Blue semiconductor laser and corresponding 3rd collimation lens of the second blue semiconductor laser and the first blue-light semiconductor laser
The 3rd speculum that the blue light half-wave plate and the first blue semiconductor laser that device is correspondingly arranged are correspondingly arranged and with it is described
Corresponding 3rd light splitting member of second blue semiconductor laser, the 3rd speculum is by the first blue-light semiconductor laser
The indigo plant that the blue laser of device transmitting is reflexed on the 3rd light splitting member and launched with second blue semiconductor laser
Color laser synthesizes a branch of blue laser at the 3rd light splitting member.
8. the as claimed in claim 7 device for synthesizing white light based on RGB semiconductor laser, it is characterised in that described the
Three collimation lenses are coated with the anti-reflection film of 465nm, and first speculum is coated with the high-reflecting film of 465nm.
9. it is as claimed in claim 1 to be based on the device that RGB semiconductor laser synthesizes white light, it is characterised in that described one
Red laser and the blue laser that the blue laser device assembly synthesizes to the synthesis of red laser device assembly pass through one or many
Individual speculum is reflexed to and synthesizes first light beam on a transflection mirror；Another red to the synthesis of red laser device assembly swashs
Light is reflexed on the transflection mirror with the green laser that the green laser device assembly synthesizes also by one or more speculums
Synthesize second light beam.
10. it is a kind of based on RGB semiconductor laser synthesize white light method, it is characterised in that including step：
S1, sets at least two pairs red laser device assemblies, at least one pair of blue laser device assembly and at least one pair of green laser
Device assembly；
S2, the blue laser that a pair of laser assemblies synthesize a branch of red lasers with a pair of blue laser device assemblies synthesize is overlapped
The first light beam is formed, is synthesized another another beam red laser to red laser device assembly and is closed with a pair of green laser device assemblies
Into green laser overlap to form the second light beam；
S3, the first light beam and second light beam are carried out to couple output white laser.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710135929.9A CN106785871A (en) | 2017-03-08 | 2017-03-08 | Synthesize the device and method of white light based on RGB semiconductor laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710135929.9A CN106785871A (en) | 2017-03-08 | 2017-03-08 | Synthesize the device and method of white light based on RGB semiconductor laser |
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| CN106785871A true CN106785871A (en) | 2017-05-31 |
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| CN201710135929.9A Pending CN106785871A (en) | 2017-03-08 | 2017-03-08 | Synthesize the device and method of white light based on RGB semiconductor laser |
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Cited By (4)
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| CN110165536A (en) * | 2019-06-06 | 2019-08-23 | 山东大学 | A kind of tunable all solid state white light laser system |
| WO2020181769A1 (en) * | 2019-03-08 | 2020-09-17 | 深圳市星汉激光科技有限公司 | Laser compound light source |
| CN111796475A (en) * | 2019-04-09 | 2020-10-20 | 成都理想境界科技有限公司 | Light source beam combining module, projection display device and projection display equipment |
| CN113805419A (en) * | 2020-06-15 | 2021-12-17 | 中强光电股份有限公司 | Illumination system and projection device |
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