CN106784029A - 一种太赫兹线列探测装置 - Google Patents
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Abstract
本发明公开了一种太赫兹线列探测装置。该探测装置由八元线列式探测器件、组合聚焦装置、可控温杜瓦单元、前置放大器及读出电路等四部分组成。该线列太赫兹探测装置通过八元铜光锥和聚四氟乙烯透镜组成的聚焦装置会聚入射的太赫兹波;通过平面耦合型碲镉汞探测器件接收太赫兹波并将其转换为电信号,并由前置放大器及读出电路放大并读出;可控温杜瓦单元用于提供合适的工作温度。该种线列探测器件响应范围可覆盖0.03‑4THz,可在近室温及液氮(77‑250K)条件下实现高灵敏度线列扫描式太赫兹探测。
Description
技术领域
本发明涉及一种太赫兹线列探测装置,更具体的说,涉及一种基于碲镉汞太赫兹探测器的线列太赫兹探测装置。
背景技术
太赫兹(Terahertz/THz)波是指频率在0.1-10THz(波长30-3000μm)范围内的电磁波,具有低能性、相干性、宽带性和穿透性等特性。因为这些独特性质,太赫兹波在通信、天文、医学成像、无损检测和安保等领域具有广泛的应用潜力,近年来已经成为国内外研究的热点[1-3]。太赫兹技术发展的重要研究内容之一是太赫兹探测技术,发展工作灵敏度高、使用方便、成本合理的太赫兹探测器,将在生物医学及化学、环境监测、天文学和遥感、通信技术、安全检查等领域发挥巨大效用,具有重大的应用意义[4-6]。
2013年以来,发明人所在课题组发展了基于碲镉汞材料的金属-半导体-金属(MSM)结构新型高灵敏度室温太赫兹探测器[8-10],并在理论上提出了一种新颖的解释。Sizov等人(2015)在实验上也报道了MSM结构碲镉汞器件对0.14THz信号的高灵敏度响应[11]。课题组通过构建合适的MSM结构,观察到碲镉汞材料(MCT)对太赫兹波的室温光电导现象,并基于太赫兹电磁辐射诱导势阱(EIW)束缚载流子的物理模型对探测机理进行了解释。基于碲镉汞材料的新型太赫兹探测器实现了较好性能。但是现有的碲镉汞器件存在以下问题:1、室温工作响应时间常数在数百微秒[9],2、敏感元尺寸小,仅为几十微米见方的量级[10],耦合能量弱。
以上所涉及的参考文献如下:
[1]Bowlan,P.,et al.,Terahertz radiative coupling and damping inmultilayer graphene.New J.Phys.16(2014)013027.
[2]Sizov,F.and A.Rogalski,THz detectors.Prog.Quant.Electron.,2010.34(5):p.278-347.
[3]Tonouchi,M.,Cutting-edge terahertz technology.Nature Photon.,2007.1(2):p.97-105.
[4]Tang,L.,et al.,Nanometre-scale germanium photodetector enhanced bya near-infrared dipole antenna.Nature Photon.,2008.2(4):p.226-229.
[5]Rogalski,A.,J.Antoszewski,and L.Faraone,Third-generation infraredphotodetector arrays.J.Appl.Phys.,2009.105(9)091101.
[6]Horiuchi,N.,Terahertz Technology Endless Applications.NaturePhoton.,2010.4(3):p.140-140.
[7]Padman,R.,et al.,A Dual-Polarization InSb Receiver for 461/492GHz.Int.J.Infrared Milli.,1992.13(10):p.1487-1513.
[8]Z.M.Huang,J.C.Tong,et al.,Room-Temperature Photoconductivity FarBelow the Semiconductor Bandgap,Adv.Mater.,2014,26(38):6594-6598.
[9]Zhiming Huang,Wei Zhou,et al.,Directly tailoring photon-electroncoupling for sensitive photoconductance,Sci.Rep.,2016,6,22938.
[10]Zhiming Huang,Wei Zhou,et al.,Extreme Sensitivity of Room-Temperature Photoelectric Effect for Terahertz Detection,Adv.Mater.,2016,28(1),112-117.
[11]F.Sizov,et al.,Two-color detector:Mercury-cadmium-telluride as aterahertz and infrared detector,Appl.Phys.Lett.,2015,106(8):814-3526.
发明内容:
本发明的目的是公开一种太赫兹线列探测装置,解决了碲镉汞单元探测器敏感元小(尺寸远小于波长)、耦合能量弱、响应速度较慢(τ~0.1ms)的问题,可满足近室温或液氮制冷条件下(77K-250K)高灵敏度太赫兹线列探测的应用需求。
本发明的太赫兹线列探测装置的结构描述如下:图1为本发明的结构框架图,图2为本发明探测装置的主视图,图3为本发明探测装置的俯视图,图4为本发明探测装置的侧视图,图5为本发明线列探测器工作示意图。
如图1所示,太赫兹线列探测装置结构包括:八元线列式探测器件1、组合聚焦装置2、可控温杜瓦单元3、前置放大器及读出电路4;
如图2所示,八元线列式探测器件1由氧化铝衬底转接电极片1-1和碲镉汞探测器件1-2组成;组合聚焦装置2由八元线列角锥2-1和聚四氟乙烯聚焦透镜2-2组成;可控温杜瓦单元3由侧罩杜瓦3-1,防辐射导热屏蔽罩3-2,液氮3-3,冷指3-4,铂金测温电阻3-5,加热片3-6,PE窗口片3-7组成;前置放大器及读出电路4由前放电路PCB板4-1,输出引线4-2,25针输出端子4-3组成。
如图2所示,可控杜瓦单元3冷指3-4中空部分正中心的内侧为铂金测温电阻3-5,外侧依次固定八元线列探测器件1和组合聚焦装置2。在冷指3-4外侧,依次为预设了对准标记的氧化铝衬底转接电极片1-1,线列器件各探测单元1-2,八元线列角锥2-1和聚四氟乙烯聚焦透镜2-2。线列角锥2-1高度为25mm,分为八个单元,各单元的高宽比为2:1,聚焦镜焦距为角锥长度的3倍,角锥长度L和器件到聚焦镜中心的距离D的比值为0.30-0.33。
如图3所示,线列器件各探测单元1-2为碲锌镉衬底上制备的碲镉汞探测器件,包括碲镉汞敏感元1-2-1和耦合天线1-2-2,各探测单元位于氧化铝衬底转接电极片1-1的上方,通过预设在氧化铝转接电极片1-1表面的转接电极1-3将电信号引出。如图5所示,通过读出电路4的选择芯片,依次选通线列器件各个单元的输出信号引线,逐个读出各单元器件的信号。
本发明具有如下优点:
1、器件灵敏度高,响应速度快(τ≤0.01ms)。
2、器件耦合天线和组合聚焦装置使得探测器对太赫兹波耦合能量强,响应信号大。
3、探测装置为线列扫描方式工作,探测效率高。
附图说明:
图1为本发明的结构框架图。
图2为本发明探测装置的侧视图。
图3为本发明探测装置的俯视图。
图4为本发明探测装置的主视图。
图5为本发明线列角锥的三视图,(a)为角锥剖面图,(b)为线列角锥图,(c)为线列角锥剖面图。
图6为本发明氧化铝转接电极片的示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚,下面结合附图描述本发明的示例性实施例的技术方案。
附图1为本探测装置结构示意简图。八元铜光锥和聚四氟乙烯透镜组成的聚焦装置会聚入射的太赫兹波;通过平面耦合型碲镉汞探测器件接收太赫兹波并将其转换为电信号,并由前置放大器及读出电路放大并读出;可控温杜瓦单元用于提供合适的工作温度。实现线列探测装置对太赫兹波信号的检测。
依照附图1所示的结构,制作了三种类型实施例探测器件。
依照上述结构,制作了3个实施例探测装置:
实施例探测装置1:在冷指3-4外侧,依次为预设了对准标记的氧化铝衬底转接电极片1-1,线列器件各探测单元1-2,八元线列角锥2-1和聚四氟乙烯聚焦透镜2-2。线列角锥2-1高度为25mm,分为八个单元,各单元的高宽比为2:1,聚焦镜为具有对称的双凸圆弧面的柱体,焦距为角锥长度的3倍,线列器件到聚焦镜中心的距离D为75mm。线列角锥各单元内侧开口尺寸为1.2mm×2.4mm。
线列器件各探测单元1-2为碲锌镉衬底的碲镉汞探测器件,包括碲镉汞敏感元1-2-1和耦合天线1-2-2,各探测单元位于氧化铝衬底转接电极片1-1的上方,通过预设在氧化铝转接电极片1-1表面的转接电极1-3将电信号引出。通过读出电路4的八选一选择芯片,依次选通线列器件各个单元的输出信号引线,使各单元逐个读出器件信号。
实施例探测装置2:在冷指3-4外侧,依次为预设了对准标记的氧化铝衬底转接电极片1-1,线列器件各探测单元1-2,八元线列角锥2-1和聚四氟乙烯聚焦透镜2-2。线列角锥2-1高度为25mm,分为八个单元,各单元的高宽比为2:1,聚焦镜为具有对称的双凸圆弧面的柱体,焦距为角锥长度的3倍,线列器件到聚焦镜中心的距离D为80mm。线列角锥各单元内侧开口尺寸为1.2mm×2.4mm。
线列器件各探测单元1-2为碲锌镉衬底的碲镉汞探测器件,包括碲镉汞敏感元1-2-1和耦合天线1-2-2,各探测单元位于氧化铝衬底转接电极片1-1的上方,通过预设在氧化铝转接电极片1-1表面的转接电极1-3将电信号引出。通过读出电路4的八选一选择芯片,依次选通线列器件各个单元的输出信号引线,使各单元逐个读出器件信号。
实施例探测装置3:在冷指3-4外侧,依次为预设了对准标记的氧化铝衬底转接电极片1-1,线列器件各探测单元1-2,八元线列角锥2-1和聚四氟乙烯聚焦透镜2-2。线列角锥2-1高度为25mm,分为八个单元,各单元的高宽比为2:1,聚焦镜为具有对称的双凸圆弧面的柱体,焦距为角锥长度的3倍,线列器件到聚焦镜中心的距离D为83mm。线列角锥各单元内侧开口尺寸为1.2mm×2.4mm。
线列器件各探测单元1-2为碲锌镉衬底的碲镉汞探测器件,包括碲镉汞敏感元1-2-1和耦合天线1-2-2,各探测单元位于氧化铝衬底转接电极片1-1的上方,通过预设在氧化铝转接电极片1-1表面的转接电极1-3将电信号引出。通过读出电路4的八选一选择芯片,依次选通线列器件各个单元的输出信号引线,使各单元逐个读出器件信号。
4.显然所描述的实施例只是本发明的一部分实施例,而不是全部的实施例。所描述的实施例仅用于图示说明,而不是对本发明范围的限制。基于本发明的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例,都属于本发明保护的范围。
Claims (1)
1.一种太赫兹线列探测装置,包括八元线列探测器件(1)、组合聚焦装置(2)、可控温杜瓦单元(3)、前置放大器及读出电路(4),其特征在于:
所述的八元线列式探测器件(1)由氧化铝衬底转接电极片(1-1),碲镉汞探测器件(1-2)和衬底表面的转接电极(1-3)组成;
所述的组合聚焦装置(2)由八元线列角锥(2-1)和聚四氟乙烯聚焦透镜(2-2)组成;线列角锥(2-1)高度为25mm,分为八个单元,各单元的高宽比为2:1,聚四氟乙烯聚焦镜(2-2)的焦距为角锥长度的长度3倍,角锥长度L和器件到聚焦镜中心的距离D的比值为0.30-0.33;
所述的可控温杜瓦单元(3)为侧罩杜瓦(3-1),防辐射导热屏蔽罩(3-2),液氮(3-3),冷指(3-4),铂金测温电阻(3-5),加热片(3-6),PE窗口片(3-7)组成;
所述的前置放大器及读出电路(4)由前放电路PCB板(4-1),输出引线(4-2),25针输出端子(4-3)组成;
所述的可控杜瓦单元(3)的冷指(3-4)中空部分正中心的内侧为铂金测温电阻(3-5),外侧依次固定八元线列探测器件(1)和组合聚焦装置(2),在冷指(3-4)外侧,依次为预设了对准标记的氧化铝衬底转接电极片(1-1)、镉汞探测器件(1-2)、元线列角锥(2-1)和聚四氟乙烯聚焦透镜(2-2);
所述的探测器件(1-2)为碲锌镉衬底的碲镉汞探测器件,包括碲镉汞敏感元(1-2-1)和耦合天线(1-2-2),各探测单元位于氧化铝衬底转接电极片(1-1)的上方,通过预设在氧化铝衬底转接电极片(1-1)表面的转接电极(1-3)将电信号引出,通过前置放大器及读出电路(4)的选择芯片使线列器件各单元器件的信号逐个读出。
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