CN106783927B - OLED display device and manufacturing method thereof - Google Patents
OLED display device and manufacturing method thereof Download PDFInfo
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- CN106783927B CN106783927B CN201611237431.5A CN201611237431A CN106783927B CN 106783927 B CN106783927 B CN 106783927B CN 201611237431 A CN201611237431 A CN 201611237431A CN 106783927 B CN106783927 B CN 106783927B
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Abstract
The application discloses an OLED display device and a manufacturing method thereof, wherein the OLED display device comprises a substrate, an anode layer, a pixel definition layer, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer and spacing columns; the blocking columns are positioned in the pixel interval region except the interval columns and at least penetrate through the hole transport layer and the hole injection layer; in the OLED display device provided by the invention, the blocking column is manufactured on the pixel interval area between two adjacent luminescent pixels with different colors, and at least one of two inner angles of the blocking column close to the pixel interval area is larger than 90 degrees, so that when organic materials such as a hole transport layer, a hole injection layer and the like are evaporated, the hole transport layer and the hole injection layer can be disconnected at the blocking column, the transverse leakage current between a certain luminescent pixel and the adjacent luminescent pixel when the luminescent pixel is lightened is further reduced, the problem of the lightening of other luminescent pixels is avoided, and the product yield is improved.
Description
Technical Field
The present invention relates to the field of display technologies, and in particular, to an OLED (Organic Light Emitting Diode) display device and a method for manufacturing the same.
Background
The OLED display technology has a self-luminous property, and a structure of a typical OLED display device will be described below with reference to fig. 1, and fig. 1 schematically illustrates a cross-sectional view of the structure of the typical OLED display device.
Referring to fig. 1, the OLED display device mainly includes a plurality of light-emitting pixels, as shown in r (red), g (green), and b (blue); each of the light-emitting pixels includes an anode 01, a hole injection layer 04, a hole transport layer 05, a light-emitting layer 06, an electron transport layer, an electron injection layer, and a cathode 08. For convenience of illustration, the electron injection layer and the electron transport layer are represented by a one-layer structure 07 in fig. 1. When a driving voltage is supplied to the anode 01 and the cathode 08, holes in the anode move toward the light emitting layer 06 through the hole injection layer 04 and the hole transport layer 05, and electrons in the cathode move toward the light emitting layer 06 through the electron injection layer and the electron injection layer 07, respectively, so that photons are recombined in the light emitting layer 06, and the pixel light emission is realized.
The hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer and the electron injection layer are formed by evaporation of a whole mask plate and cover the whole pixel region. Because the hole injection layer and the hole transport layer have good conductivity, when a certain light-emitting pixel is controlled to emit light, holes flow from the anode to the cathode and generate transverse leakage current, and reach adjacent light-emitting pixels through the hole transport layer and the hole injection layer, so that light-emitting pixels of other colors are stolen to be bright. As shown in fig. 1, black arrows indicate current directions when the light emitting pixel B emits light, and open arrows indicate lateral drain directions.
Disclosure of Invention
In view of this, the present invention provides an OLED display device and a method for manufacturing the same, so as to reduce the probability of lighting pixels being stolen due to the existence of lateral leakage current in the display process of the OLED display device in the prior art.
In order to achieve the purpose, the invention provides the following technical scheme:
an OLED display device comprising:
a substrate;
an anode layer formed on one side of the substrate, a pixel defining layer including a plurality of pixel regions and a plurality of pixel spacing regions, two adjacent pixel regions being spaced apart from each other by the pixel spacing regions;
a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer formed on the surface of the anode layer, which is far away from the substrate;
the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer and the electron injection layer form a light emitting pixel in the pixel region;
a spacer formed on the pixel defining layer and located in the pixel spacing region;
a blocking pillar on the pixel spacing region outside the spacer pillar, the blocking pillar penetrating at least the hole transport layer and the hole injection layer;
a cathode layer formed on the side of the barrier pillars facing away from the substrate;
the blocking column is at least arranged between two adjacent luminous pixels with different colors, and the maximum length of the blocking column is larger than or equal to that of the two luminous pixels adjacent to the blocking column in the direction perpendicular to the connecting line of the centers of the two luminous pixels adjacent to the blocking column;
and in a plane perpendicular to the substrate and on which a connecting line of centers of two light-emitting pixels adjacent to the blocking column is located, the cross section of the blocking column is quadrilateral, and at least one of two internal angles close to the pixel interval area is larger than 90 degrees.
The invention also provides a manufacturing method of the OLED display device, which is applied to the OLED display device and comprises the following steps:
providing a substrate;
sequentially forming an anode layer and a pixel defining layer on the substrate, wherein the pixel defining layer comprises a plurality of pixel regions and a plurality of pixel spacing regions, and two adjacent pixel regions are spaced from each other by the pixel spacing regions;
forming a spacer pillar on the pixel spacing region;
forming a barrier pillar on the pixel spacing region outside the spacer pillar;
sequentially evaporating to form a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer, wherein the hole injection layer is directly contacted with the anode layer, and at least the hole injection layer and the hole transport layer are disconnected at the edge of the barrier column;
and forming the whole cathode layer by evaporation.
According to the technical scheme, the OLED display device provided by the invention is additionally provided with the blocking columns in the pixel spacing region outside the spacing columns, and the blocking columns at least penetrate through the hole transport layer and the hole injection layer; the blocking column is at least arranged between two adjacent light-emitting pixels with different colors, and the maximum length of the blocking column is larger than or equal to that of the two light-emitting pixels adjacent to the blocking column in the direction perpendicular to the connecting line of the centers of the two light-emitting pixels adjacent to the blocking column; and in a plane perpendicular to the substrate and on which a connecting line of centers of two light-emitting pixels adjacent to the blocking column is located, the cross section of the blocking column is quadrilateral, and at least one of two internal angles close to the pixel interval area is larger than 90 degrees. That is, in the OLED display device provided by the present invention, the blocking pillar is formed on the pixel spacing region between two adjacent light-emitting pixels with different colors, at least one of two inner angles of the blocking pillar near the pixel spacing region is greater than 90 °, so that when organic materials such as a hole transport layer and a hole injection layer are evaporated, the hole transport layer and the hole injection layer can be disconnected at the blocking pillar, thereby reducing the lateral leakage between a light-emitting pixel and an adjacent light-emitting pixel when the light-emitting pixel is lighted, avoiding the problem of lighting of other light-emitting pixels, and improving the yield of products.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
FIG. 1 is a cross-sectional view of a prior art OLED display device;
FIG. 2 is a cross-sectional view illustrating a detailed structure of an OLED display device in the prior art;
fig. 3 is an OLED display device according to an embodiment of the present invention;
FIG. 4 is a partial schematic view of the OLED display device shown in FIG. 3;
fig. 5 shows a pixel arrangement according to an embodiment of the invention;
FIG. 6 shows another pixel layout according to an embodiment of the present invention;
fig. 7 is a flowchart of a method for manufacturing an OLED display device according to an embodiment of the invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 2, the OLED display device structure mainly includes: a pixel defining layer for defining a light emitting pixel, the pixel defining layer including a pixel region and a pixel interval region 02; a spacer pillar 03 located above the pixel spacing region; and a light emitting pixel; each of the light-emitting pixels includes an anode 01, a hole injection layer 04, a hole transport layer 05, a light-emitting layer 06, an electron transport layer, an electron injection layer, and a cathode 08. For convenience of illustration, the electron injection layer and the electron transport layer are represented by a one-layer structure 07 in fig. 1. When a driving voltage is supplied to the anode 01 and the cathode 08, holes in the anode move toward the light emitting layer 06 through the hole injection layer 04 and the hole transport layer 05, and electrons in the cathode move toward the light emitting layer 06 through the electron injection layer and the electron injection layer 07, respectively, so that photons are recombined in the light emitting layer 06, and the pixel light emission is realized.
As shown in fig. 2, the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer, and the electron injection layer are formed by evaporation of a mask plate on the whole surface, and cover the entire pixel region. Because the hole injection layer and the hole transport layer have good conductivity, when a certain light-emitting pixel is controlled to emit light, holes flow from the anode to the cathode and generate transverse leakage current, and reach adjacent light-emitting pixels through the hole transport layer and the hole injection layer, so that light-emitting pixels of other colors are stolen to be bright.
The inventor analyzes that, in the OLED display device in the prior art, the pixel defining layer includes the spacer pillar 03, and the height of the spacer pillar 03 relative to the pixel defining layer is more than 2 micrometers, but because two inner angles (such as an inner angle β 1 and an inner angle β 2 in fig. 2) of the spacer pillar 03 close to the pixel defining layer are small and generally smaller than 50 °, both the hole transport layer 05 and the hole injection layer 04 can cover the surface of the spacer pillar 3 after evaporation, and the spacer pillar 3 does not block the hole transport layer and the hole injection layer between different light-emitting pixels, so that the problem of lateral leakage is easily caused.
On the other hand, in a high-resolution product, the distance between adjacent light-emitting pixels is narrowed, and due to the fact that a Shadow effect exists in the evaporation process, namely, an evaporation diffusion effect exists at the edge of an evaporation mask plate, organic materials can be evaporated at the position corresponding to an opening area of a non-mask plate, and further when the light-emitting materials are evaporated, the light-emitting materials can partially fall into a pixel interval area of a pixel definition layer between the light-emitting pixels, and the light-emitting materials with different colors in the pixel interval area can partially overlap, so that color mixing is easy to generate.
In view of the above problems, the present invention provides an OLED display device including:
a substrate;
an anode layer formed on one side of the substrate, a pixel defining layer including a plurality of pixel regions and a plurality of pixel spacing regions, two adjacent pixel regions being spaced apart from each other by the pixel spacing regions;
a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer formed on the surface of the anode layer, which is far away from the substrate;
the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer and the electron injection layer form a light emitting pixel in the pixel region;
a spacer formed on the pixel defining layer and located in the pixel spacing region;
a blocking pillar on the pixel spacing region outside the spacer pillar, the blocking pillar penetrating at least the hole transport layer and the hole injection layer;
a cathode layer formed on the side of the barrier pillars facing away from the substrate;
the blocking column is at least arranged between two adjacent luminous pixels with different colors, and the maximum length of the blocking column is larger than or equal to that of the two luminous pixels adjacent to the blocking column in the direction perpendicular to the connecting line of the centers of the two luminous pixels adjacent to the blocking column;
and in a plane perpendicular to the substrate and on which a connecting line of centers of two light-emitting pixels adjacent to the blocking column is located, the cross section of the blocking column is quadrilateral, and at least one of two internal angles close to the pixel interval area is larger than 90 degrees.
Through making the blocking column on the pixel interval region between two adjacent different luminescent pixels in color, at least one of two inner angles of the blocking column close to the pixel interval region is larger than 90 degrees, so that when organic materials such as a hole transport layer and a hole injection layer are evaporated, the hole transport layer and the hole injection layer can be disconnected at the blocking column, and therefore when a certain luminescent pixel is lightened, the transverse leakage flow between the adjacent luminescent pixel is reduced, the problem that other luminescent pixels are stolen to be lightened is avoided, and the product yield is improved. On the other hand, at least one of two inner angles of the blocking column close to the pixel interval area is larger than 90 degrees, so that the shadow effect can be reduced when the light-emitting layer is evaporated, and the color mixing phenomenon is reduced.
Referring to fig. 3, fig. 3 is a schematic diagram of an OLED display device according to an embodiment of the present invention, including: a substrate 0; an anode layer 1 formed on one side of the substrate 0, a pixel defining layer including a plurality of pixel regions and a plurality of pixel spacing regions 2, two adjacent pixel regions being spaced apart from each other by the pixel spacing regions 2; a hole injection layer 4, a hole transport layer 5, a light emitting layer 6, an electron transport layer and an electron injection layer 7 formed on the surface of the anode layer 1 away from the substrate 0; the hole injection layer 4, the hole transport layer 5, the light emitting layer 6, the electron transport layer and the electron injection layer 7 form a light emitting pixel in a pixel region; a spacer 3 formed on the pixel defining layer and located in the pixel spacing region 2; a blocking pillar 9 located on the pixel spacing region 2 outside the spacer pillar 3, the blocking pillar 9 penetrating at least the hole transport layer 5 and the hole injection layer 4; a cathode layer 8 formed on the side of the barrier pillars 9 facing away from the substrate 0;
the blocking column 9 is at least arranged between two adjacent light-emitting pixels with different colors, and the maximum length of the blocking column 9 is greater than or equal to that of the two light-emitting pixels adjacent to the blocking column 9 in the direction perpendicular to the connecting line of the centers of the two light-emitting pixels adjacent to the blocking column 9; and in a plane perpendicular to the substrate 0 and containing a connecting line of centers of two light-emitting pixels adjacent to the barrier column 9, the cross section of the barrier column 9 is quadrilateral, and at least one of two inner angles close to the pixel spacing region 2 is larger than 90 degrees.
In this embodiment, the material of the barrier pillars 9 is not limited, and optionally, the material of the barrier pillars 9 is one or more of silicon oxide, silicon nitride, and silicon oxycarbide. The barrier pillars 9 may be a single layer of silicon oxide, a single layer of silicon nitride, or a single layer of silicon oxycarbide, or may be formed by alternately forming a layer of silicon oxide and a layer of silicon nitride, which is not limited in this embodiment.
It should be noted that the blocking pillar 9 in the present invention functions to block the lateral leakage between two adjacent light-emitting pixels, and therefore, the blocking pillar 9 at least penetrates through the hole injection layer 4 and the hole transport layer 5, as shown in fig. 3; the thickness of the blocking pillar 9 is not limited in this embodiment as long as it can at least penetrate through the hole injection layer 4 and the hole transport layer 5, as shown in fig. 4, that is, the thickness H2 of the blocking pillar 9 in this embodiment is greater than or equal to the sum H3 of the thicknesses of the hole injection layer 4 and the hole transport layer 5. However, since the cathode layer 8 is common between the respective light-emitting pixels, the thickness of the barrier column 9 is less than or equal to the distance from the surface of the cathode layer 8 facing the substrate 0 to the surface of the barrier column 9 facing the substrate 0, that is, less than or equal to the sum of the thicknesses of the hole transport layer 5 and the hole injection layer 4, and the electron transport layer and the electron injection layer 7H 1. Namely H3 ≦ H2 ≦ H1 in the drawing.
It should be noted that, when depositing an organic material of a light emitting layer, it is very likely to form the light emitting layer in a pixel spacing region by evaporation due to the shadow effect, and at this time, in order to avoid the color mixing phenomenon, the blocking pillar may also penetrate through the hole injection layer, the hole transport layer and the light emitting layer, that is, the thickness of the blocking pillar needs to be at least greater than the sum of the thicknesses of the hole injection layer, the hole transport layer and the light emitting layer. In order to ensure the blocking effect of the blocking pillar, more optionally, the blocking pillar in this embodiment further penetrates through the electron transport layer and the electron injection layer.
The hole injection layer in a typical OLED display device has a thickness of
The hole transport layer has a thickness of
The thickness of the electron transport layer is
The cathode is typically a magnesium (Mg) silver (Ag) alloy having a thickness of
Therefore, in order to disconnect the hole transport layer and the hole injection layer without affecting the coverage of the cathode layer, the thickness of the barrier pillars may be set to be
Including the endpoint values.
It should be noted that in the plane perpendicular to the substrate, where the connecting line of the centers of two light-emitting pixels adjacent to the barrier column is located, as shown in fig. 3 and 4, the cross section of the barrier column 9 is quadrilateral, and at least one of two interior angles close to the pixel spacing region 2 is greater than 90 °. At this time, because at least one of two inner angles of the blocking pillar 9 close to the pixel spacing region 2 is greater than 90 °, one side of the inner angle of the blocking pillar 9 greater than 90 °, that is, the blocking pillar 9 inclines towards the outer side of the blocking pillar 9 toward the sidewall W1 of the light-emitting pixel, when the hole injection layer 4, the hole transport layer 5, the light-emitting layer 6, the electron transport layer, and the electron injection layer 7 are formed by evaporating an organic material, the organic material cannot be deposited below the downward-inclined sidewall W1 of the blocking pillar 9, and is disconnected at the downward-inclined sidewall W1 of the blocking pillar 9, so that the blocking pillar 9 disconnects the hole injection layer 4 and the hole transport layer 5, and a transverse passage between two adjacent light-emitting pixels is avoided.
It should be noted that, in order to ensure the blocking effect of the blocking pillar, in this embodiment, optionally, both inner angles of the blocking pillar 9 near the pixel spacing region are greater than 90 °, that is, as shown in fig. 4, both the side walls W1 and the side wall W2 of the blocking pillar 9 are inclined toward the substrate. In theory, blocking the lateral path between two adjacent light emitting pixels can be realized as long as at least one of two inner angles of the blocking pillar near the pixel spacing region is larger than 90 °. In this embodiment, the blocking pillar 9 is formed by performing etching after forming a film by Chemical Vapor Deposition (CVD), and from the perspective of the manufacturing process, the greater the angle of the two internal angles close to the pixel spacing region is, the greater the difficulty of the etching process is, therefore, in this embodiment, the two internal angles of the blocking pillar close to the pixel spacing region are both greater than 90 ° and less than or equal to 120 °.
In a plane perpendicular to the substrate and in a plane where a connecting line of centers of two light emitting pixels adjacent to the barrier column is located, as shown in fig. 4, a cross section of the barrier column 9 is a quadrangle, and a specific shape of the quadrangle is not limited in this embodiment, and the quadrangle may be a parallelogram, an inverted trapezoid, or another quadrangle as long as at least one sidewall of the barrier column is inclined outward with respect to the barrier column. In order to ensure that the blocking pillar can be disconnected from the hole injection layer 4 and the hole transport layer 5 on both sides, in this embodiment, the blocking pillar 9 is optionally in an inverted trapezoid structure, as shown in fig. 4.
Referring to fig. 5, fig. 5 is a pixel arrangement mode according to an embodiment of the present invention, where fig. 5 shows a plane parallel to a substrate surface, and a maximum length L1 of each blocking pillar 9 is greater than or equal to a maximum length L2 of two light-emitting pixels adjacent to the blocking pillar 9 in a direction perpendicular to a line connecting centers of two light-emitting pixels adjacent to the blocking pillar 9, i.e., a direction perpendicular to a line connecting centers of the light-emitting pixel R and the light-emitting pixel G in the drawing, i.e., a second direction S. The lengths of the respective pixels shown in fig. 5 in the direction perpendicular to the line connecting the centers of the pixel R and the pixel G, that is, the second direction S, are the same as long as the length L1 of the barrier ribs 9 in the second direction S is greater than the length L2 of the pixel.
Referring to fig. 6, fig. 6 shows another pixel arrangement manner provided by the embodiment of the invention, in which fig. 6 shows a plane parallel to the substrate surface, in a direction perpendicular to a line connecting centers of two adjacent light-emitting pixels of the barrier rib 9, for example, a direction perpendicular to a line connecting centers of a light-emitting pixel R and a light-emitting pixel G in the figure, a maximum length L3 of the barrier rib 9 is greater than or equal to a maximum length L4 of the two adjacent light-emitting pixels of the barrier rib 9.
In this embodiment, the barrier ribs 9 are at least located between two adjacent light-emitting pixels with different colors. Namely, in the embodiment, when the colors of two adjacent light-emitting pixels are different, the blocking column 9 is arranged to block the transverse leakage of the two adjacent light-emitting pixels with different colors; the colors of two adjacent luminous pixels are the same, even if transverse leakage current exists, the color of the stolen luminous pixel is the same as that of the lighted luminous pixel, and the problem of color mixing can not exist.
In the embodiment of the present invention, a pixel arrangement manner of the OLED display device is not limited, and optionally, referring to fig. 5, fig. 5 is a pixel arrangement manner provided in the embodiment of the present invention, wherein the plurality of light emitting pixels at least include a first light emitting pixel R, a second light emitting pixel G, and a third light emitting pixel B, which have different colors from each other. The first light-emitting pixel R, the second light-emitting pixel G and the third light-emitting pixel B are sequentially and repeatedly arranged along a first direction F to form a first pixel row; the first light-emitting pixel R, the second light-emitting pixel G and the third light-emitting pixel B are sequentially and repeatedly arranged along a first direction F to form a second pixel row; the first pixel rows and the second pixel rows are sequentially and repeatedly arranged along a second direction S; wherein the third light emitting pixel B in the second pixel row is located between the first light emitting pixel R and the second light emitting pixel G in the first pixel row along the first direction F.
In the top view of the OLED display device shown in fig. 5, that is, the projection on the substrate, in this embodiment, the first light-emitting pixel R, the second light-emitting pixel G, and the third light-emitting pixel B have the same shape, are all in a stripe shape, and are parallel to the projection of the blocking pillar located between the first light-emitting pixel R and the second light-emitting pixel G.
It should be noted that, in this embodiment, specific colors of the first light-emitting pixel, the second light-emitting pixel, and the third light-emitting pixel are not limited, and optionally, the first light-emitting pixel is a red pixel, the second light-emitting pixel is a green pixel, and the third light-emitting pixel is a blue pixel; the pixel arrangement of the OLED display device in this embodiment may also be in other arrangement manners, for example, the light emitting pixel may further include a fourth light emitting pixel, the fourth light emitting pixel is a white pixel, and the first light emitting pixel, the second light emitting pixel, and the third light emitting pixel form a chromaticity system of r (red), g (green), b (blue), w (white), which is not described in detail in this embodiment.
Referring to fig. 6, fig. 6 shows another pixel arrangement manner according to an embodiment of the present invention, in which the plurality of light emitting pixels include a first light emitting pixel R1, a second light emitting pixel B1, a third light emitting pixel G, a fourth light emitting pixel B2, and a fifth light emitting pixel R2; wherein the light emitting pixels include at least three colors. The first and second light-emitting pixels R1 and B1 are sequentially and repeatedly arranged along the first direction F to form a first pixel row; the third light emitting pixels G are repeatedly arranged along the first direction F to form a second pixel row; the fourth light-emitting pixel B2 and the fifth light-emitting pixel R2 are repeatedly arranged in sequence along the first direction F to form a third pixel row; the first pixel rows and the second pixel rows are sequentially and repeatedly arranged along a second direction; the third pixel row is positioned between the first pixel row and the second pixel along the second direction S; wherein, along the first direction F, the third light-emitting pixel G is located between the first and second light-emitting pixels R1 and B1; the third light-emitting pixel G is positioned between the first and fourth light-emitting pixels R1 and B2 along the second direction S.
In the present embodiment, the projections of the first light-emitting pixel R1, the second light-emitting pixel B1, the third light-emitting pixel G, the fourth light-emitting pixel B2, and the fifth light-emitting pixel R2 on the substrate are all rectangular, and the area of the third light-emitting pixel is smaller than the areas of the other light-emitting pixels.
It should be noted that, in this embodiment, specific colors of the first light-emitting pixel, the second light-emitting pixel, and the third light-emitting pixel are not limited, and optionally, in this embodiment, both the first light-emitting pixel R1 and the fifth light-emitting pixel R2 are red light-emitting pixels; the second luminescent pixel B1 and the fourth luminescent pixel B2 are both blue luminescent pixels; the third light emitting pixel G is a green light emitting pixel. The pixel arrangement of the OLED display device in this embodiment may also be in other arrangement manners, for example, the light emitting pixel may further include a sixth light emitting pixel, the sixth light emitting pixel is a white pixel, and the first light emitting pixel, the second light emitting pixel, the third light emitting pixel, the fourth light emitting pixel, and the fifth light emitting pixel form a r (red) g (green) b (blue) w (white) chromaticity system, which is not described in detail in this embodiment.
According to the OLED display device provided by the embodiment of the invention, the blocking columns are additionally arranged on the pixel spacing region of the OLED display device and are positioned outside the spacing columns, and the blocking columns at least penetrate through the hole transport layer and the hole injection layer; the blocking column is at least arranged between two adjacent light-emitting pixels with different colors, and the maximum length of the blocking column is larger than or equal to that of the two light-emitting pixels adjacent to the blocking column in the direction perpendicular to the connecting line of the centers of the two light-emitting pixels adjacent to the blocking column; and in a plane perpendicular to the substrate and on which a connecting line of centers of two light-emitting pixels adjacent to the blocking column is located, the cross section of the blocking column is quadrilateral, and at least one of two internal angles close to the pixel interval area is larger than 90 degrees. That is, in the OLED display device provided by the present invention, the blocking pillar is formed on the pixel spacing region between two adjacent light-emitting pixels with different colors, at least one of two inner angles of the blocking pillar near the pixel spacing region is greater than 90 °, so that when organic materials such as a hole transport layer and a hole injection layer are evaporated, the hole transport layer and the hole injection layer can be disconnected at the blocking pillar, thereby reducing the lateral leakage between a light-emitting pixel and an adjacent light-emitting pixel when the light-emitting pixel is lighted, avoiding the problem of lighting of other light-emitting pixels, and improving the yield of products.
On the other hand, at least one of two inner angles of the blocking column close to the pixel interval area is larger than 90 degrees, so that the shadow effect can be reduced when the light-emitting layer is evaporated, and the color mixing phenomenon is reduced.
Another embodiment of the present invention provides a method for manufacturing the OLED display device in the above embodiment, as shown in fig. 7, which is a flowchart of a method for manufacturing the OLED display device, and the method includes:
step S101: providing a substrate;
in this embodiment, the substrate is not limited to the material, and may be made of glass, flexible PI (polyimide), or the like.
Step S102: sequentially forming an anode layer and a pixel defining layer on the substrate, wherein the pixel defining layer comprises a plurality of pixel regions and a plurality of pixel spacing regions, and two adjacent pixel regions are spaced from each other by the pixel spacing regions;
in this embodiment, the anode layer is not limited to be made of a transparent conductive material or a non-transparent conductive material, and is optionally a stacked structure of an ITO (indium tin oxide) layer, a metal silver (Ag) layer, and an ITO layer.
Step S103: forming a spacer pillar on the pixel spacing region;
step S104: forming a barrier pillar on the pixel spacing region outside the spacer pillar;
in the embodiment of the present invention, the forming of the blocking pillar on the pixel spacing region outside the spacing pillar specifically includes: forming a whole layer of barrier film by chemical vapor deposition; and etching the barrier film to form barrier columns which are positioned on the pixel interval area and are outside the interval columns.
The material of the barrier column is one or more of silicon oxide, silicon nitride and silicon oxycarbide. The barrier pillars in this embodiment penetrate at least the hole transport layer and the hole injection layer; optionally, the thickness of the barrier pillars ranges from
Including the endpoint values. Both internal angles near the pixel spacing region are greater than 90 °.
Step S105: sequentially evaporating to form a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer, wherein the hole injection layer is directly contacted with the anode layer, and at least the hole injection layer and the hole transport layer are disconnected at the edge of the barrier column;
because the blocking column is at least arranged between two adjacent luminous pixels with different colors, the maximum length of the blocking column is larger than or equal to that of the two luminous pixels adjacent to the blocking column in the direction perpendicular to the connecting line of the centers of the two luminous pixels adjacent to the blocking column; and in a plane perpendicular to the substrate and on which a connecting line of centers of two light-emitting pixels adjacent to the blocking column is located, the cross section of the blocking column is quadrilateral, and at least one of two internal angles close to the pixel interval area is larger than 90 degrees.
Therefore, when the organic material is evaporated to form the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer and the electron injection layer, at least one of two inner angles of the blocking column close to the pixel spacing region is larger than 90 degrees, and the organic material cannot be deposited on the side wall of the blocking column, so that the blocking column is disconnected, the transverse leakage phenomenon between two adjacent light emitting pixels with different colors is blocked by the blocking column, the transverse leakage between one light emitting pixel and the adjacent light emitting pixel is reduced when the certain light emitting pixel is lightened, the problem of the stealing lighting of other light emitting pixels is avoided, and the product yield is improved. On the other hand, at least one of two inner angles of the blocking column close to the pixel interval area is larger than 90 degrees, so that the shadow effect can be reduced when the light-emitting layer is evaporated, and the color mixing phenomenon is reduced.
Step S106: and forming the whole cathode layer by evaporation.
In this embodiment, the material of the cathode layer may be a magnesium-silver alloy.
In the method for manufacturing the OLED display device, only chemical vapor deposition and etching processes are added for the passivation column, and a more complex manufacturing process is not introduced, so that the method for manufacturing the OLED display device is simple and convenient, is easy to realize, and does not add a fussy manufacturing process compared with the manufacturing of the OLED display device in the prior art.
It should be noted that, in the present specification, the embodiments are all described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments may be referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (16)
1. An OLED display device, comprising:
a substrate;
an anode layer formed on one side of the substrate, a pixel defining layer including a plurality of pixel regions and a plurality of pixel spacing regions, two adjacent pixel regions being spaced apart from each other by the pixel spacing regions;
a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer formed on the surface of the anode layer, which is far away from the substrate;
the hole injection layer, the hole transport layer, the light emitting layer, the electron transport layer and the electron injection layer form a light emitting pixel in the pixel region;
a spacer formed on the pixel defining layer and located in the pixel spacing region;
a blocking pillar on the pixel spacing region outside the spacer pillar, the blocking pillar penetrating the hole transport layer and the hole injection layer;
the whole cathode layer is formed on one side, away from the substrate, of the barrier post;
wherein the thickness of the blocking pillar is equal to the sum of the thicknesses of the hole transport layer and the hole injection layer; the blocking column is at least arranged between two adjacent luminous pixels with different colors, and the maximum length of the blocking column is larger than or equal to that of the two luminous pixels adjacent to the blocking column in the direction perpendicular to the connecting line of the centers of the two luminous pixels adjacent to the blocking column;
and in a plane perpendicular to the substrate and on which a connecting line of centers of two light-emitting pixels adjacent to the blocking column is located, the cross section of the blocking column is quadrilateral, and at least one of two internal angles close to the pixel interval area is larger than 90 degrees.
2. The OLED display device claimed in claim 1, wherein both internal angles of the barrier pillars adjacent to the pixel spacing region are greater than 90 °.
3. The OLED display device claimed in claim 2, wherein both internal angles of the barrier pillars adjacent to the pixel spacing region are greater than 90 ° and less than or equal to 120 °.
4. The OLED display device of claim 3, wherein the quadrilateral is an inverted trapezoid.
5. The OLED display device according to claim 1, wherein the barrier pillars are made of one or more of silicon oxide, silicon nitride and silicon oxycarbide.
6. The OLED display device according to claim 1, wherein the barrier pillars are formed by chemical vapor deposition and etching.
7. The OLED display device of claim 1, wherein the barrier pillars have a thickness in a range from 800 Å -2200 Å, inclusive.
8. The OLED display device according to any one of claims 1 to 7, wherein the plurality of light-emitting pixels include at least a first light-emitting pixel, a second light-emitting pixel, and a third light-emitting pixel which are different from each other in color.
9. The OLED display device according to claim 8, wherein the first light-emitting pixel, the second light-emitting pixel, and the third light-emitting pixel have the same shape, and a projection on the substrate is a stripe.
10. The OLED display device of claim 9,
the first light-emitting pixels, the second light-emitting pixels and the third light-emitting pixels are sequentially and repeatedly arranged along a first direction to form a first pixel row;
the first light-emitting pixels, the second light-emitting pixels and the third light-emitting pixels are sequentially and repeatedly arranged along the first direction to form a second pixel row;
the first pixel rows and the second pixel rows are sequentially and repeatedly arranged along a second direction;
wherein, along the first direction, a third light emitting pixel in the second pixel row is located between the first light emitting pixel and the second light emitting pixel in the first pixel row.
11. The OLED display device according to any one of claims 1 to 7, wherein the plurality of light emitting pixels include a first light emitting pixel, a second light emitting pixel, a third light emitting pixel, a fourth light emitting pixel, and a fifth light emitting pixel;
wherein the light emitting pixels include at least three colors.
12. The OLED display device claimed in claim 11, wherein the first, second, third, fourth and fifth light-emitting pixels each have a rectangular projection on the substrate.
13. The OLED display device of claim 12,
the first light-emitting pixels and the second light-emitting pixels are sequentially and repeatedly arranged along a first direction to form a first pixel row;
the third light-emitting pixels are repeatedly arranged along the first direction to form a second pixel row;
the fourth light-emitting pixel and the fifth light-emitting pixel are sequentially and repeatedly arranged along the first direction to form a third pixel row;
the first pixel rows and the second pixel rows are sequentially and repeatedly arranged along a second direction;
the third pixel row is located between the first pixel row and the second pixel row along the second direction;
wherein, along the first direction, the third light emitting pixel is located between the first light emitting pixel and the second light emitting pixel; the third light-emitting pixel is located between the first light-emitting pixel and the fourth light-emitting pixel along the second direction.
14. The OLED display device of claim 13, wherein the first light-emitting pixel and the fifth light-emitting pixel are both red light-emitting pixels; the second light-emitting pixel and the fourth light-emitting pixel are both blue light-emitting pixels; the third light emitting pixel is a green light emitting pixel.
15. A method for manufacturing an OLED display device, which is applied to the OLED display device according to any one of claims 1 to 14, the method comprising:
providing a substrate;
sequentially forming an anode layer and a pixel defining layer on the substrate, wherein the pixel defining layer comprises a plurality of pixel regions and a plurality of pixel spacing regions, and two adjacent pixel regions are spaced from each other by the pixel spacing regions;
forming a spacer pillar on the pixel spacing region;
forming a barrier pillar on the pixel spacing region outside the spacer pillar;
sequentially evaporating to form a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer, wherein the hole injection layer is directly contacted with the anode layer, and the hole injection layer and the hole transport layer are disconnected at the edge of the barrier column;
and forming the whole cathode layer by evaporation.
16. The manufacturing method according to claim 15, wherein the forming of the blocking pillars on the pixel spacing region outside the spacer pillars is specifically:
forming a whole layer of barrier film by chemical vapor deposition;
and etching the barrier film to form barrier columns which are positioned on the pixel interval area and are outside the interval columns.
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| CN107093674B (en) * | 2017-06-09 | 2020-03-17 | 上海天马有机发光显示技术有限公司 | Organic light-emitting display panel, preparation method and display device thereof |
| CN110581145B (en) * | 2018-06-11 | 2022-08-16 | 云谷（固安）科技有限公司 | Display screen and display device |
| CN109378329A (en) * | 2018-09-28 | 2019-02-22 | 昆山国显光电有限公司 | Organic light-emitting display device and preparation method thereof, the mask plate for preparing support column |
| CN111755617B (en) * | 2019-03-28 | 2023-08-15 | 宁波舜宇光电信息有限公司 | Under-screen camera shooting assembly and corresponding terminal equipment |
| EP3952260A4 (en) | 2019-03-28 | 2022-05-18 | Ningbo Sunny Opotech Co., Ltd. | Under-display camera assembly and corresponding terminal device |
| CN111490088B (en) * | 2020-04-24 | 2022-11-04 | 京东方科技集团股份有限公司 | Display panel and display device |
| CN111599851B (en) * | 2020-06-02 | 2023-04-11 | 京东方科技集团股份有限公司 | Display panel and display device |
| CN112542495B (en) * | 2020-11-26 | 2023-11-24 | 合肥维信诺科技有限公司 | Display panel and display device |
| CN113053968B (en) * | 2021-03-10 | 2024-03-12 | 上海天马微电子有限公司 | Organic light emitting display panel and display device |
| CN114023910A (en) * | 2021-11-05 | 2022-02-08 | 武汉天马微电子有限公司 | Display panel and display device |
| CN114256432B (en) * | 2021-12-16 | 2024-02-23 | 武汉天马微电子有限公司 | Display panel and display device |
| CN115394939A (en) * | 2022-09-06 | 2022-11-25 | 上海天马微电子有限公司 | Display panel and display device |
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