CN106773405A - Array base palte and liquid crystal display - Google Patents
Array base palte and liquid crystal display Download PDFInfo
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- CN106773405A CN106773405A CN201611245920.5A CN201611245920A CN106773405A CN 106773405 A CN106773405 A CN 106773405A CN 201611245920 A CN201611245920 A CN 201611245920A CN 106773405 A CN106773405 A CN 106773405A
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- array base
- base palte
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- common electrode
- dielectric layer
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136209—Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136222—Colour filters incorporated in the active matrix substrate
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
Abstract
The present invention discloses a kind of array base palte and liquid crystal display, and the array base palte includes underlay substrate；Thin film transistor (TFT), is arranged on underlay substrate；Wire grating common electrode layer, is arranged on the primary lights on thin film transistor (TFT) and for being filtered into incident light required for carrying out colored display；Pixel electrode, is arranged in wire grating common electrode layer.Through the above way, the present invention can simplify the technological process for preparing thin film transistor (TFT) and CF in COA techniques respectively, and saving process costs simultaneously reduces the risk of colourity inequality of each sub-pixel caused by thickness inequality.
Description
Technical field
The present invention relates to technical field of liquid crystal display, more particularly to a kind of array base palte and liquid crystal display.
Background technology
COA (Color Filter on Array) technology is that prepared by color layer into the technology on array base palte, to be formed
Colored filter.Due to the presence of thin film transistor (TFT), in the display panel of COA structures, the usual right and wrong of membrane structure of Array sides
Flat structures, even if by protective layer and the interval of flatness layer, still may be faced because of film surface when preparing color light resistance layer
It is uneven, the problems such as cause photoresistance uneven thickness, so as to influence the uniformity of chromaticity of panel, and different colours sub-pixel correspondence
Chromatic photoresist needs, by multi-step process realization, to increase the complexity of technique.
The content of the invention
The present invention provides a kind of array base palte and liquid crystal display, can save technique, and reduce each sub-pixel because of thickness
The risk of the colourity inequality caused by inequality.
In order to solve the above technical problems, the technical solution adopted by the present invention is：A kind of array base palte, the array base are provided
Plate includes：Underlay substrate；Thin film transistor (TFT), is arranged on the underlay substrate；Wire grating common electrode layer, is arranged at described
Primary lights on thin film transistor (TFT) and for being filtered into incident light required for carrying out colored display；Pixel electrode, is arranged at institute
State in wire grating common electrode layer.
Wherein, it is provided with wall between the wire grating and the pixel electrode.
Wherein, the array base palte also includes being covered in the planarization layer of the thin film transistor (TFT), wherein the metal wire
Grid and the pixel electrode are cascadingly set on the planarization layer.
Wherein, the wire grating includes dielectric layer and the multiple bonding jumpers being arranged at intervals on the dielectric layer.
Wherein, the dielectric layer includes the first medium layer, second dielectric layer, the 3rd dielectric layer that are stacked, described the
One dielectric layer is located between many metal lines and the second dielectric layer, and the refractive index of the second dielectric layer is higher than described
Firstth, the refractive index of the 3rd dielectric layer.
Wherein, the array base palte further includes the bonding jumper for electrically connecting the different wire gratings
Conductor, the conductor is set with the bonding jumper with layer, and is provided with multiple void regions of array-like arrangement, each gold
The bonding jumper for belonging to wiregrating is correspondingly arranged in void region described in.
Wherein, the material of the metal wire is at least one in Al, Ag and Au or combination, and the material of the dielectric layer is
SiO2、SiO、MgO、Si3N4、TiO2And Ta2O5In one kind or combination.
In order to solve the above technical problems, another technical scheme that the present invention is used is：A kind of liquid crystal display is provided, it is described
Liquid crystal display include opposite substrate that array base palte as described in above-mentioned any one and the array base palte be oppositely arranged with
And it is held on the liquid crystal layer between the array base palte and the opposite substrate, the opposite substrate netrual colour filter layer and black
Matrix.
The beneficial effects of the invention are as follows：The situation of prior art is different from, the present invention provides a kind of array base palte and liquid crystal
Display, by being provided as the wire grating of colored light-filtering units on array base palte, can simplify make respectively in COA techniques
Standby thin film transistor (TFT) and the technological process of CF, save process costs and reduce colourity of each sub-pixel caused by thickness inequality not
Equal risk.
Brief description of the drawings
Fig. 1 is the structural representation of the implementation method of array base palte of the present invention；
Fig. 2 is the structural representation of the implementation method of wire grating one in array base palte of the present invention；
Fig. 3 is the structural representation of the implementation method of metal wire one in wire grating of the present invention；
Fig. 4 is the structural representation of the implementation method of liquid crystal display of the present invention.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than whole embodiments.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Fig. 1 is referred to, Fig. 1 is the structural representation of the implementation method of array base palte of the present invention.As illustrated, the array base
Plate 10 includes：Underlay substrate 11, pixel electrode 12, wire grating common electrode layer 13 and thin film transistor (TFT) 14.
Wherein, the thin film transistor (TFT) 14 is arranged on the underlay substrate 11, refers to each liquid crystal picture on liquid crystal display
Vegetarian refreshments is driven by integrated thin film transistor (TFT) behind.
Further, wire grating common electrode layer 13, is arranged on thin film transistor (TFT) 14 and for incident light to be filtered
Red, green, blue primary lights into needed for carrying out colored display.
Alternatively, pixel electrode 12 is arranged on underlay substrate 11 for multiple.
Also referring to Fig. 2, Fig. 2 is the structure of the implementation method of wire grating common electrode layer one in array base palte of the present invention
Schematic diagram.Wherein, wire grating common electrode layer 13 includes dielectric layer 131 and the multiple being arranged at intervals on dielectric layer 131
Bonding jumper 132.
Specifically, the bonding jumper 132 in wire grating common electrode layer 13 and dielectric layer 131 are knot of periodically arranging
Structure, and the dielectric layer 131 is the multilayer dielectric structure of index modulation, and further include the first medium layer being stacked
1311st, second dielectric layer 1312, the 3rd dielectric layer 1313.Specifically, first medium layer 1311 is located at a plurality of bonding jumper 132 and the
Between second medium layer 1312, the folding of the refractive index higher than first medium the 1311, the 3rd dielectric layer 1313 of layer of second dielectric layer 1312
Penetrate rate.
Further, bonding jumper 132 is the material with larger imaginary index, is specifically as follows in Al, Ag and Au
At least one or combination.
Further, in dielectric layer 131, the material of first medium the 1311, the 3rd dielectric layer 1313 of layer can be SiO2、
At least one or combination in SiO and MgO, the material of second dielectric layer 1312 can be Si3N4、TiO2And Ta2One kind in O5
Or combination.Wherein, the 1311, the 3rd dielectric layer 1313 of first medium layer can be refractive index identical Jie of identical material composition
Matter layer.
It should be noted that the height of dielectric layer refractive index signified in the application is relative concept, namely restriction is shot high
Rate dielectric area refractive index is higher than low refractive index dielectric area, but does not limit a certain material as high or low refraction materials.
Also referring to Fig. 3, Fig. 3 is that the structure of the implementation method of bonding jumper one in wire grating common electrode layer of the present invention is shown
It is intended to.Wherein, array base palte 10 further includes the bonding jumper 132 for electrically connecting different wire grating common electrode layers 13
Conductor 133, using cause wire grating common electrode layer 13 as array base palte 10 public electrode, in the metal during display
Apply reference potential on bar 132 and conductor 133, and the conductor 133 could be arranged to network structure.
Specifically, the conductor 133 is set with bonding jumper 132 with layer, and is provided with multiple void regions of array-like arrangement,
The bonding jumper 132 of each wire grating common electrode layer 13 is correspondingly arranged in a void region.Alternatively, the conductor 133 is gone back
Can be that, used as black photoresistance, its effect is to reduce light leak to improve contrast.
In a particular embodiment, bonding jumper 132 supports a series of phasmon patterns with the surface of dielectric layer 131, freely empty
Between light field coupled with phasmon pattern by periodic optical grating construction, can be presented bright when both reach pattern match
Aobvious light field penetration effect, thus can be used as effective colored filter, and its free transmission range can be by metal
The parameter of wiregrating common electrode layer 13 carries out flexible modulation.
Alternatively, the parameter setting of the wire grating common electrode layer 13 corresponding to partial pixel electrode 12 is obtained each other not
Together, and then by incident light the primary lights of different colours are filtered into.Specifically, arranged by setting wire grating common electrode layer 13
Cycle, thickness, width, material category and hierarchy can realize colorized optical filtering function.
It is cycle period with the primary lights red, green, blue needed for carrying out colored display in an application scenarios of the invention, can
It is 200-500nm with the cycle for setting the corresponding wire grating common electrode layer 13, wherein, each primary lights institute is right
The width of the bonding jumper 132 of the wire grating common electrode layer 13 answered is different, in other words, in a particular embodiment, pin
The primary lights such as different RGBs are set with the cycle of its correspondence wire grating common electrode layer 13.Alternatively, in same week
The cycle of the interim wire grating common electrode layer 13 that can be set corresponding to blue primary light is 200nm, can also set red base
The cycle of the wire grating common electrode layer 13 corresponding to coloured light is 500nm, herein the cycle of wire grating common electrode layer 13
Design parameter the present invention be set be not especially limited, and the metal in other cycles corresponding to each RGB primary lights
The cycle of wiregrating common electrode layer 13 should be identical.
Certainly, in other application scene, it is also possible to red, green and green, it is blue be cycle period, to wire grating common electrical
Pole layer 13 enters line period setting.
Further, it is 0.4-0.9 that the cycle according to above-mentioned wire grating common electrode layer 13 sets its dutycycle, its
In, dutycycle refers to that the width of all bonding jumpers 132 in the wire grating common electrode layer 13 accounts for wire grating public electrode
Layer the ratio between 13 and the overall width of attachment structure 133.
Alternatively, the width for setting the metal wire is 20-200nm, wherein, each primary lights are corresponding in one cycle
Wire grating common electrode layer 13 in the width of bonding jumper 132 set different, in other different cycles, identical primary colours
The width of the corresponding bonding jumper 132 of light sets identical.
Further, metal wire is determined by the cycle of above-mentioned wire grating common electrode layer 13, dutycycle and width
Grid common electrode layer 13 as colored filter transmitance passband line width and the transmitance of central peak.Wherein, transmitance
Passband line width refers to the wavelength cover through frequency spectrum (i.e. high transmittance part).The transmitance of central peak refers to, with red
The transmission intensity of the light of wavelength accounts for the ratio of incident intensity centered on turquoise primary colours optical wavelength.Specifically, can be by metal
The cycle of wiregrating common electrode layer 13, thickness, the isoparametric setting of width, material category and adjust and be selected as colored filter
The transmitance passband line width and the transmitance of central peak of mating plate.In the above-described embodiments, the transmitance passband line width is about
20-50nm, and the transmitance of its central peak is more than 70%.
Above-mentioned implementation method, by the cycle to wire grating, width, the isoparametric setting of material, to cause metal wire
Incident light can be filtered into grid the primary lights of different colours as colored filter.
Please continue to refer to Fig. 1, array base palte 10 includes the planarization layer 15 being covered on thin film transistor (TFT) 14, wherein metal
Wiregrating common electrode layer 13 and pixel electrode 12 are cascadingly set on planarization layer 15.Wherein, the planarization layer 15 is used to
Flat array base palte 10, to cause that the film forming face relatively flat and isolation liquid crystal of pixel electrode 12 prevent it to be contaminated.
Further, the array base palte 10 also includes the interval being arranged between a plurality of bonding jumper 132 and pixel electrode 12
Layer 16.
Further, the array base palte 10 also include be stacked in the grid barrier layer (GI) 17 on underlay substrate 11 with
And insulated barriers layer (ILD) 18.Wherein, the grid barrier layer (GI) 17 is used for spacer gates offer grid regulation and control medium simultaneously
Layer, insulated barriers layer (ILD) 18 are used to intercept source-drain electrode.
Above-mentioned implementation method, by the wire grating by color optical filter unit is provided as on array base palte, Neng Goujian
The technological process of thin film transistor (TFT) and CF is prepared in change COA techniques respectively, saving process costs simultaneously reduces each sub-pixel because of thickness
The risk of the colourity inequality caused by inequality.
Fig. 4 is referred to, Fig. 4 is the structural representation of the implementation method of liquid crystal display of the present invention.As illustrated, the liquid crystal
Opposite substrate 22 and be held on array base that display 20 is oppositely arranged including above-mentioned array base palte 10 and array base palte 10
Liquid crystal layer 23 between plate 10 and opposite substrate 22, and the netrual colour filter layer of opposite substrate 22 and black matrix".Wherein, array base
Described in the structure of plate 10 sees above, it is no longer repeated herein.
In sum, it should be readily apparent to one skilled in the art that the present invention provides a kind of array base palte and liquid crystal display, letter
The technological process of thin film transistor (TFT) and CF is prepared in change COA techniques respectively, saving process costs simultaneously reduces each sub-pixel because of thickness
The risk of the colourity inequality caused by inequality.
Embodiments of the present invention are the foregoing is only, the scope of the claims of the invention is not thereby limited, it is every using this
Equivalent structure or equivalent flow conversion that description of the invention and accompanying drawing content are made, or directly or indirectly it is used in other correlations
Technical field, is included within the scope of the present invention.
Claims (8)
1. a kind of array base palte, it is characterised in that the array base palte includes:
Underlay substrate；
Thin film transistor (TFT), is arranged on the underlay substrate；
Wire grating common electrode layer, is arranged on the thin film transistor (TFT) and carries out colored display for incident light to be filtered into
Required primary lights；
Pixel electrode, is arranged in the wire grating common electrode layer.
2. array base palte according to claim 1, it is characterised in that the wire grating common electrode layer and the pixel
Wall is provided between electrode.
3. array base palte according to claim 2, it is characterised in that the array base palte also includes being covered in the film
The planarization layer of transistor, wherein the wire grating common electrode layer and the pixel electrode are cascadingly set on described putting down
On smoothization layer.
4. array base palte according to claim 1, it is characterised in that the wire grating common electrode layer includes dielectric layer
And it is arranged at intervals at the multiple bonding jumpers on the dielectric layer.
5. array base palte according to claim 4, it is characterised in that the dielectric layer includes the first medium being stacked
Layer, second dielectric layer and the 3rd dielectric layer, the first medium layer be located at many metal lines and the second dielectric layer it
Between, the refractive index of the second dielectric layer is higher than the described first, refractive index of the 3rd dielectric layer.
6. array base palte according to claim 4, it is characterised in that the array base palte is further included for electrically connecting
The conductor of the bonding jumper of the different wire grating common electrode layers, the conductor is set with the bonding jumper with layer,
And multiple void regions that array-like is arranged are provided with, the bonding jumper correspondence of each wire grating common electrode layer sets
It is placed in void region described in.
7. array base palte according to claim 4, it is characterised in that during the material of the bonding jumper is Al, Ag and Au
At least one or combination, the material of the dielectric layer is SiO2、SiO、MgO、Si3N4、TiO2And Ta2O5In one kind or combination.
8. a kind of liquid crystal display, it is characterised in that the liquid crystal display is included as described in claim 1-7 any one
Opposite substrate and be held on the array base palte with the opposite substrate that array base palte and the array base palte are oppositely arranged
Between liquid crystal layer, the opposite substrate netrual colour filter layer and black matrix".
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611245920.5A CN106773405B (en) | 2016-12-29 | 2016-12-29 | Array substrate and liquid crystal display |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611245920.5A CN106773405B (en) | 2016-12-29 | 2016-12-29 | Array substrate and liquid crystal display |
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| CN106773405A true CN106773405A (en) | 2017-05-31 |
| CN106773405B CN106773405B (en) | 2020-01-03 |
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| CN107664881A (en) * | 2017-10-31 | 2018-02-06 | 武汉华星光电技术有限公司 | Liquid crystal display and its display module |
| CN109471283A (en) * | 2017-09-07 | 2019-03-15 | 乐金显示有限公司 | Liquid crystal disply device and its preparation method including liquid crystal capsule |
| CN110137184A (en) * | 2019-05-27 | 2019-08-16 | 京东方科技集团股份有限公司 | A kind of array substrate, display panel and display device |
| WO2020015325A1 (en) * | 2018-07-16 | 2020-01-23 | 惠科股份有限公司 | Array substrate, display panel and manufacturing method therefor |
| CN113185927A (en) * | 2021-02-10 | 2021-07-30 | 武汉华星光电半导体显示技术有限公司 | Composite material and display device |
| US11088171B2 (en) | 2018-07-16 | 2021-08-10 | HKC Corporation Limited | Array substrate, display panel and method of manufacturing the same |
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| CN110137184A (en) * | 2019-05-27 | 2019-08-16 | 京东方科技集团股份有限公司 | A kind of array substrate, display panel and display device |
| CN110137184B (en) * | 2019-05-27 | 2021-09-21 | 京东方科技集团股份有限公司 | Array substrate, display panel and display device |
| US11327380B2 (en) | 2019-05-27 | 2022-05-10 | Boe Technology Group Co., Ltd. | Array substrate, display panel and display device |
| CN113185927A (en) * | 2021-02-10 | 2021-07-30 | 武汉华星光电半导体显示技术有限公司 | Composite material and display device |
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