CN106773073A - The system that tricolor laser device realizes equal optical illumination - Google Patents

The system that tricolor laser device realizes equal optical illumination Download PDF

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Publication number
CN106773073A
CN106773073A CN201710017047.2A CN201710017047A CN106773073A CN 106773073 A CN106773073 A CN 106773073A CN 201710017047 A CN201710017047 A CN 201710017047A CN 106773073 A CN106773073 A CN 106773073A
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CN
China
Prior art keywords
semiconductor
green
light path
output light
filter plate
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Pending
Application number
CN201710017047.2A
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Chinese (zh)
Inventor
刘喆
杨杰
薛斌
廖周
王军喜
李晋闽
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Institute of Semiconductors of CAS
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Institute of Semiconductors of CAS
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Priority to CN201710017047.2A priority Critical patent/CN106773073A/en
Publication of CN106773073A publication Critical patent/CN106773073A/en
Pending legal-status Critical Current

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    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0916Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
    • G02B27/0922Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers the semiconductor light source comprising an array of light emitters
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0938Using specific optical elements

Abstract

The system that a kind of tricolor laser device realizes equal optical illumination, including:First, second, and third collimation lens is placed respectively in one green glow, a feux rouges and a blue semiconductor laser, the front end of three kinds of semiconductor lasers;One long wave cut-off function filter plate, it is located on the output light path of green light semiconductor, and the output light path shape with green light semiconductor has angle;One short wavelength cutoff filter plate, it is located on the output light path of green light semiconductor, and is had angle with the output light path shape of green light semiconductor;One neutral density filter plate, it is located on the output light path of blue semiconductor laser;One first microlens array and one second microlens array, are sequentially located on the output light path of green light semiconductor respectively, and after short wavelength cutoff filter plate;One convergent lens, it is located at after the second microlens array, and on the output light path of green light semiconductor.

Description

The system that tricolor laser device realizes equal optical illumination
Technical field
The present invention relates to a kind of laser illumination system, specifically, it is related to a kind of tricolor laser device to realize equal optical illumination System.The system causes certain destruction to the coherence of laser, it is possible to achieve the laser white light of uniform-illumination.
Background technology
Visible light communication technology have energy-saving safe, without frequency spectrum certification, to exempt from electromagnetic interference, message capacity big etc. many excellent Gesture, has a extensive future, and is the study hotspot of optical communication field.In recent years, laser causes as the light source of visible light communication Great concern.Visible light communication as its name suggests, information transfer is carried out while illumination.But due to laser beam brightness Height, high directivity, interference are serious, are used directly to illuminate not only effect extreme difference but also can damage human eye.Asked for this Topic, the present invention synthesizes white light beam using three kinds of laser of red, green, blue by suitable optical element, and uses microlens array White light to synthesizing is homogenized, and realizes the illumination spot of uniform-illumination.
The content of the invention
It is an object of the invention to provide the system that a kind of tricolor laser device realizes equal optical illumination, it can improve semiconductor The illumination uniformity of laser.
The present invention provides the system that a kind of tricolor laser device realizes equal optical illumination, including:
One green light semiconductor, three kinds of semiconductors of a red light semiconductor laser and a blue semiconductor laser swash The first collimation lens, the second collimation lens and the 3rd collimation are placed respectively thoroughly in light device, the front end of three kinds of semiconductor lasers Mirror;
One long wave cut-off function filter plate, it is located on the output light path of green light semiconductor, and in the first collimation lens Behind, the output light path shape with green light semiconductor has angle, the output illumination of the red light semiconductor laser Penetrate in the another side of long wave cut-off function filter plate;
One short wavelength cutoff filter plate, it is located on the output light path of green light semiconductor, and positioned at long wave cut-off function filter After wave plate, and had angle with the output light path shape of green light semiconductor;
One neutral density filter plate, it is located on the output light path of blue semiconductor laser, and in the 3rd collimation lens Behind, the output light of the blue semiconductor laser is irradiated in the another side of short wavelength cutoff filter plate;
One first microlens array and one second microlens array, are sequentially located at the output of green light semiconductor respectively In light path, and after short wavelength cutoff filter plate;
One convergent lens, it is located at after the second microlens array, and positioned at the output light path of green light semiconductor On.
The beneficial effects of the present invention are:Laser beam is divided into many tiny light beams by two groups of microlens arrays, and There is inhomogeneities in vertical direction between these tiny light beams, the coherence to laser causes certain destruction, Er Qie Tiny light beam on lighting screen positioned at symmetric position can be overlapped mutually so that the inhomogeneities of this vertical direction is obtained again Compensation, therefore not only irrelevant uniformity but also good illumination spot have been obtained on lighting screen.
Brief description of the drawings
To further illustrate technology contents of the invention, with reference to embodiments and after accompanying drawing detailed description such as, wherein:
Fig. 1 is the system structure diagram that tricolor laser device of the invention realizes equal optical illumination.
Specific embodiment
Accompanying drawing described herein as is used for providing a further understanding of the present invention, constitutes the part of the application, the present invention Illustrative example and illustrate, for explaining the present invention, not constitute inappropriate limitation of the present invention.
Refer to shown in Fig. 1, the present invention provides the system that a kind of tricolor laser device realizes equal optical illumination, including:
3 three kind half of one green light semiconductor 1, a red light semiconductor laser 2 and a blue semiconductor laser are led The first collimation lens 4, the second collimation lens 4 ' and the 3rd are placed respectively in body laser, the front end of three kinds of semiconductor lasers Collimation lens 4 ";
The output wavelength of wherein described green light semiconductor 1 is 510 to 530nm, the red light semiconductor laser 2 Output wavelength be 620 to 650nm, the output wavelength of the blue semiconductor laser 3 is 430 to 470nm;
The quantity of wherein described green, red, blue three kinds of semiconductor lasers 1,2,3 is more than or equal to 1, or for three semiconductors swash Light device array;
Wherein described green, red, blue three kinds of semiconductor lasers 1,2,3 are semiconductor laser diode;
Wherein described first, second, and third collimation lens 4,4 ', 4 " is planoconvex spotlight or biconvex lens, forms light Refraction and reflection;
A diameter of 1 inch of wherein described first, second, and third collimation lens 4,4 ', 4 ", focal length is 25.4mm, plated surface There is anti-reflection film, anti-reflection wavelength is 350 to 700nm;
One long wave cut-off function filter plate 5, it is located on the output light path of green light semiconductor 1, and saturating in the first collimation Behind mirror 4, the output light path shape with green light semiconductor 1 has angle, the output of the red light semiconductor laser 2 Light irradiation in the another side of long wave cut-off function filter plate 5, the output light of the long wave cut-off function optical filter 5 and green semiconductor laser 1 The angle that road is formed is 45 °;
The material of wherein described long wave cut-off function optical filter 5 is ultraviolet melting sial, a diameter of 25mm, and cutoff wavelength is 600nm, i.e., the light that it may only be through wavelength less than or equal to 600nm;
One short wavelength cutoff filter plate 6, it is located on the output light path of green light semiconductor 1, and positioned at long wave cut-off function After filter plate 5, and had angle with the output light path shape of green light semiconductor 1, the short wavelength cutoff optical filter 6 cut Only wavelength is 500nm, and the angle that the short wavelength cutoff optical filter 6 is formed with the output light path of green light semiconductor 1 is 45°;
The material of wherein described short wavelength cutoff optical filter 6 is ultraviolet melting sial, a diameter of 25mm, and cutoff wavelength is 500nm, i.e., the light that it may only be through wavelength more than or equal to 500nm;
One neutral density filter plate 7, it is located on the output light path of blue semiconductor laser 3, and saturating in the 3rd collimation Behind mirror 4 ", the output light of the blue semiconductor laser 3 is irradiated in the another side of short wavelength cutoff filter plate 6;
A diameter of 25mm of wherein described neutral density filter plate 7, optical density is 0.4, for reducing the strong of blue laser Degree, to avoid the formation of the white light of cool tone;
One first microlens array 8 and one second microlens array 8 ', are sequentially located at green light semiconductor 1 respectively On output light path, and after short wavelength cutoff filter plate 6;
Sub-lens focal point of wherein described second microlens array 8 ' positioned at first microlens array 8;
Sub-lens in the wherein described microlens array 8 ' of first microlens array 8 and second are 30 × 30, and sub-lens are Planoconvex spotlight or biconvex lens, its bore are shaped as circular, square or rectangle;
The bore of the sub-lens in the wherein described microlens array 8 ' of first microlens array 8 and second is shaped as circle When, its a diameter of 150 μm to 500 μm, the bore of the sub-lens in the microlens array 8 ' of first microlens array 8 and second When being shaped as square, its length of side is 150 μm to 500 μm, in the microlens array 8 ' of first microlens array 8 and second When the bore of sub-lens is shaped as rectangle, its a length of 150 μm to 500 μm, a width of 150 μm to 500 μm;
The surface of the wherein described microlens array 8 ' of first microlens array 8 and second is coated with anti-reflection film, and anti-reflection wavelength is 400 to 900nm;
One convergent lens 9, its focal point for being located at the second microlens array 8 ', and positioned at the defeated of green semiconductor laser 1 Go out in light path;
Wherein described convergent lens is spherical projection lens, and a diameter of 45mm, material is B270, the non-plated film in surface.
The course of work of the invention is,
Fig. 1 is referred to, when green 1 in Fig. 1, red 2, blue 3 semiconductor laser are in normal operating conditions, is launched Hot spot is in light and dark striated.Green glow, feux rouges, three kinds of light beams of blue light respectively by first, second, third collimation lens 4, 4 ', 4 " collimate, wherein light beam is reduced its intensity by neutral density filter plate 7, green beam can be saturating in transmitting procedure Long wave cut-off function filter plate 5 is crossed, red light beam can be reflected by long wave cut-off function filter plate 5 and then be total to green beam in transmitting procedure Axle, feux rouges, green beam can pass through short wavelength cutoff filter plate 6 in transmitting procedure, and light beam can be short in transmitting procedure The reflection of ripple cut-off filter plate 6 is then and feux rouges, green beam are coaxial, and three kinds of light beams of RGB are by microlens array 8 and lenticule Permutation 8 ' is divided into tiny light beam and is fully overlapped in space, and the focal point for finally converging at convergent lens 9 forms uniform-illumination White light hot spot.
Preferred embodiment of the invention is the foregoing is only, is not intended to limit the invention, for the technology of this area For personnel, the present invention can have various changes and change.All any modification, equivalent substitution and improvements made for the present invention etc., Should be included within the scope of the present invention.

Claims (7)

1. the system that a kind of tricolor laser device realizes equal optical illumination, including:
One green light semiconductor, three kinds of semiconductor lasers of a red light semiconductor laser and a blue semiconductor laser The first collimation lens, the second collimation lens and the 3rd collimation lens are placed respectively in device, the front end of three kinds of semiconductor lasers;
One long wave cut-off function filter plate, it is located on the output light path of green light semiconductor, and after the first collimation lens Face, the output light path shape with green light semiconductor has angle, and the output light of the red light semiconductor laser is irradiated in The another side of long wave cut-off function filter plate;
One short wavelength cutoff filter plate, it is located on the output light path of green light semiconductor, and positioned at long wave cut-off function filter plate Afterwards, and with the output light path shape of green light semiconductor have angle;
One neutral density filter plate, it is located on the output light path of blue semiconductor laser, and after the 3rd collimation lens Face, the output light of the blue semiconductor laser is irradiated in the another side of short wavelength cutoff filter plate;
One first microlens array and one second microlens array, are sequentially located at the output light path of green light semiconductor respectively On, and after short wavelength cutoff filter plate;
One convergent lens, it is located at after the second microlens array, and on the output light path of green light semiconductor.
2. the system that tricolor laser device according to claim 1 realizes equal optical illumination, wherein the Green-emitting semiconductor swashs The output wavelength of light device is 510 to 530nm, and the output wavelength of the red light semiconductor laser is 620 to 650nm, the indigo plant The output wavelength of optical semiconductor laser is 430 to 470nm.
3. the system that tricolor laser device according to claim 2 realizes equal optical illumination, wherein described green, red, blue three kinds The quantity of semiconductor laser is more than or equal to 1, or is three semiconductor laser arrays.
4. the system that tricolor laser device according to claim 1 realizes equal optical illumination, wherein the long wave cut-off function filters The cutoff wavelength of piece is 580 to 600nm, the folder that the long wave cut-off function optical filter is formed with the output light path of green semiconductor laser Angle is 45 °.
5. the system that tricolor laser device according to claim 1 realizes equal optical illumination, wherein the short wavelength cutoff filters The cutoff wavelength of piece is 480 to 500nm, the folder that the short wavelength cutoff optical filter is formed with the output light path of green semiconductor laser Angle is 45 °.
6. the system that tricolor laser device according to claim 1 realizes equal optical illumination, wherein described first, second and Three collimation lenses are planoconvex spotlight or biconvex lens, form the transmission and reflection of light.
7. the system that tricolor laser device according to claim 1 realizes equal optical illumination, wherein first lenticule battle array Sub-lens in row and the second microlens array are 30 × 30, and sub-lens are planoconvex spotlight or biconvex lens, its bore shape It is circular, square or rectangle.
CN201710017047.2A 2017-01-10 2017-01-10 The system that tricolor laser device realizes equal optical illumination Pending CN106773073A (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107942611A (en) * 2017-11-22 2018-04-20 深圳创维-Rgb电子有限公司 A kind of dynamic laser light effect device and its implementation
CN111198444A (en) * 2020-02-20 2020-05-26 上海鲲游光电科技有限公司 Dimension-increasing camera device and light emitting assembly and application thereof
CN112728430A (en) * 2021-01-25 2021-04-30 广东八通激光设备有限公司 Lamp for outputting white light based on blue laser excitation fluorescent powder and light emitting mode

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JPH03239954A (en) * 1990-02-19 1991-10-25 Kyodo Printing Co Ltd Method and device for inspecting pattern member
CN101755300A (en) * 2008-05-21 2010-06-23 松下电器产业株式会社 Projector
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Publication number Priority date Publication date Assignee Title
JPH03239954A (en) * 1990-02-19 1991-10-25 Kyodo Printing Co Ltd Method and device for inspecting pattern member
CN101755300A (en) * 2008-05-21 2010-06-23 松下电器产业株式会社 Projector
CN104834170A (en) * 2014-02-10 2015-08-12 精工爱普生株式会社 Projector

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Title
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107942611A (en) * 2017-11-22 2018-04-20 深圳创维-Rgb电子有限公司 A kind of dynamic laser light effect device and its implementation
CN111198444A (en) * 2020-02-20 2020-05-26 上海鲲游光电科技有限公司 Dimension-increasing camera device and light emitting assembly and application thereof
CN112728430A (en) * 2021-01-25 2021-04-30 广东八通激光设备有限公司 Lamp for outputting white light based on blue laser excitation fluorescent powder and light emitting mode

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Application publication date: 20170531