CN106773015A - The etalon and its adjusting method of a kind of Wavelength tunable - Google Patents
The etalon and its adjusting method of a kind of Wavelength tunable Download PDFInfo
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- CN106773015A CN106773015A CN201611169455.1A CN201611169455A CN106773015A CN 106773015 A CN106773015 A CN 106773015A CN 201611169455 A CN201611169455 A CN 201611169455A CN 106773015 A CN106773015 A CN 106773015A
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- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 60
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 24
- 230000033001 locomotion Effects 0.000 claims abstract description 5
- 239000000919 ceramic Substances 0.000 claims description 2
- 238000003754 machining Methods 0.000 abstract description 4
- 230000002269 spontaneous effect Effects 0.000 abstract description 4
- 239000000463 material Substances 0.000 description 4
- 230000000747 cardiac effect Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
- G02B26/001—Optical devices or arrangements for the control of light using movable or deformable optical elements based on interference in an adjustable optical cavity
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Abstract
The invention discloses a kind of etalon of Wavelength tunable, the etalon includes rectangle substrate and wedge-shaped substrate, rectangle substrate includes the first reflecting surface S1 and the second reflecting surface S2, wedge-shaped substrate includes the 3rd reflecting surface S3 and the 4th reflecting surface S4, 3rd reflecting surface S3 is relative to the second inclined inclined-planes of reflecting surface S2, angle α between the 3rd reflecting surface S3 and the second reflecting surface S2 is 0.1 ' 1 ', pedestal up and down motion is driven to drive wedge-shaped substrate vertically to move up and down by finely tuning, wedge-shaped substrate is moved up and down so as to reach the change of chamber L long, realize the change of central wavelength lambda.Present invention utilizes the spontaneous angle of wedge of machining accuracy, simple structure designs ingenious, and processing cost is low, it is not necessary to complicated control mode, and ingenious make use of the vertical long range of wedge-shaped substrate（Grade）Change cause long small in chamber（Micron order）Change, i.e., cause the change of chamber micron dimension long by the change of vertical upper millimeter magnitude, realize the precise control of centre wavelength.
Description
Technical field
The invention belongs to optical component field, and in particular to the etalon and its adjusting method of a kind of Wavelength tunable.
Background technology
The etalon of optical field is set generally in the form of solid (state), is made up of two basal planes being parallel to each other.
In order to meet the accurate selection of low-loss and wavelength, two basal plane requirement perfect parallelisms.The applicable wavelength of the usual etalon
Adjustable extent is extremely limited, or is only used for fixed wave length, and is not easily achieved continuously adjusting for wavelength.
And in the above prior art, there is problems with during wavelength regulation, it is difficult to the fine setting of wavelength is realized,
Since when wave-length coverage very little, chamber regulated value very little long（Micron/submicron magnitude）If, it is simply simple small
Regulation chamber is long, is difficult to realize accurate fine adjustment（Micron/submicron magnitude）, and device complexity, high cost, and centre wavelength
Regulation is time-consuming.
For example, having by the chamber of temperature control regulation resonator scheme long, Chinese patent application Application No.
CN201310085991.3, describes a kind of by using the extremely low material of thermal coefficient of expansion, realizing that the chamber personal attendant of resonator adds
In thermal coefficient of expansion for α 1 material and thermal coefficient of expansion for the material of α 2 temperature change and controllable variations, so as to reach ripple
Regulation long（Change）Scheme, the control program employs two kinds of different special materials of thermal coefficient of expansion and makes, and structure is multiple
It is miscellaneous, high processing costs, and need gradually to be drawn close to the wavelength for needing by temperature control regulation, control difficulty is big, and the consuming time is long.
The content of the invention
For problems of the prior art, the present invention provides a kind of etalon and its adjusting method of Wavelength tunable,
And simple structure, low cost, additionally it is possible to increase the accuracy and convenience of wavelength selection.
To achieve the above object, the present invention uses following technical scheme：
A kind of etalon of Wavelength tunable, the etalon includes rectangle substrate and wedge-shaped substrate, and the rectangle substrate includes first
Reflecting surface S1 and the second reflecting surface S2, the wedge-shaped substrate includes the 3rd reflecting surface S3 and the 4th reflecting surface S4, and described second is anti-
Penetrate and resonator is formed between face S2 and the 3rd reflecting surface S3, the distance between described second reflecting surface S2 and the 3rd reflecting surface S3 L
For the chamber of resonator is long, the 3rd reflecting surface S3 is relative to the second inclined inclined-planes of reflecting surface S2, the 3rd reflecting surface
Angle α between S3 and the second reflecting surface S2 for 0.1 ' -1 '（The angle of wedge is spontaneous by machining accuracy）, the square
Shape substrate is vertically fixed on pedestal, and the wedge-shaped substrate lower end drives pedestal to be arranged on pedestal by finely tuning, by fine setting
Driving pedestal to move up and down drives wedge-shaped substrate vertically to move up and down, and wedge-shaped substrate moves up and down long so as to reach chamber
Change, realize the change of central wavelength lambda, the height of the wedge-shaped substrate is H, the changing value note that the wedge-shaped substrate is moved up and down
It is Δ H, chamber changing value long is designated as Δ L, the Δ L=Δs H × tan α.
Incident light beam multiple reflections between the second reflecting surface S2 and the 3rd reflecting surface S3 form multiple-beam interference, more light
Relation between the central wavelength lambda and thickness L of beam interferometer is：Central wavelength lambda=2 of multiple-beam interference × n × L × cos θ/k, institute
It is the refractive index of the air between rectangle substrate and wedge-shaped substrate to state n, and θ is light beam in the second reflecting surface S1 and the 3rd reflecting surface S3
Incidence angle, k is interference level, and k values are positive integer.
It is that millimeter magnitude microelectron-mechanical adjusts pedestal that the fine setting drives pedestal.
It is that millimeter magnitude piezoelectric ceramics finely tunes pedestal that the fine setting drives pedestal.
A kind of adjusting method of the etalon of Wavelength tunable, comprises the following steps：
Step 1, from centre wavelength computing formula λ=2 × n × L × cos θ/k, center wavelength variation value Δ λ=2 × n × Δ L
× cos θ/k, according to Δ λ value, the refractive index n values of air, the incidence angle θ value and interference level k values of light beam calculate chamber long
Variation delta L；
Step 2, by formula Δ L=Δs H × tan α, according to the Δ L values that angle α value and the step 1 are calculated, draws Δ H
Value,
Step 3, according to the Δ H values that the step 2 is obtained, vertically moves wedge shape substrate,
Step 4, when Δ H values are less than zero, then vertically moves up wedge-shaped substrate, and the distance for moving up is Δ H；When
When Δ H values are more than zero, then wedge shape substrate is moved vertically downwards, the distance for moving down is | Δ H |.
Etalon in the present invention refers both to Fabry-Perot（F-P）Etalon, the chamber of resonator is long to refer both to etalon
Heart thickness, angle α is the angle of wedge in the present invention, and the angle of wedge is spontaneous by machining accuracy.
Compared with prior art, beneficial effects of the present invention are：1. the present invention is by the vertically movable of wedge-shaped substrate（Upper shifting
Or move down）, so that the hypotenuse where the locking angle of wedge-shaped substrate is moved along the direction where the angle of wedge, so as to realize resonator
Chamber is long（The center thickness of etalon）Change, so as to realize the regulation of incident center wavelength of light；2. present invention utilizes by machine
The spontaneous angle of wedge of tool machining accuracy, simple structure designs ingenious, and processing cost is low, it is not necessary to complicated control mode, and
And the ingenious change that make use of the vertical long range of wedge-shaped substrate causes chamber minor alteration long, i.e., by millimeter amount on vertical direction
The change of level causes the change of chamber micron/submicron magnitude long, is easy to implement precise control, can quick regulation in required
Cardiac wave is long, greatlys save regulating time, improves operating efficiency.
Brief description of the drawings
Fig. 1 is structural representation of the invention.
Specific embodiment
Technical scheme is elaborated further below in conjunction with the drawings and specific embodiments.Following reality
The selection for applying k values in example is for causing actual centre wavelength near the wavelength of setting.
Embodiment 1
As shown in figure 1, the etalon of the present embodiment Wavelength tunable, the etalon includes rectangle substrate 1 and wedge-shaped substrate 2, described
Rectangle substrate 1 includes the first reflecting surface S1 and the second reflecting surface S2, and the wedge-shaped substrate 2 is anti-including the 3rd reflecting surface S3 and the 4th
Face S4 is penetrated, resonator 3 is formed between the second reflecting surface S2 and the 3rd reflecting surface S3, the second reflecting surface S2 and the 3rd anti-
Penetrate the chamber that the distance between face S3 L is resonator 3 long, the 3rd reflecting surface S3 is inclined relative to the second reflecting surface S2 oblique
Face, angle α between the 3rd reflecting surface S3 and the second reflecting surface S2 for 0.1 ' -1 ', the rectangle substrate 1 is vertically fixed on
On pedestal 4, the lower end of wedge-shaped substrate 2 drives pedestal 5 to be arranged on pedestal 6 by finely tuning, by fine setting driving pedestal about 5
Motion drives wedge-shaped substrate 2 vertically to move up and down, and wedge-shaped substrate 2 moves up and down the change long so as to reach chamber, realizes
The change of central wavelength lambda, the height of the wedge-shaped substrate is H, and the changing value that the wedge-shaped substrate is moved up and down is designated as Δ H, institute
State chamber changing value long and be designated as Δ L, the Δ L=Δs H × tan α.
Incident light beam multiple reflections between the second reflecting surface S2 and the 3rd reflecting surface S3 form multiple-beam interference, more light
Relation between the central wavelength lambda and thickness L of beam interferometer is：Central wavelength lambda=2 of multiple-beam interference × n × L × cos θ/k, institute
It is the refractive index of the air between rectangle substrate 1 and wedge-shaped substrate 2 to state n, and θ is light beam in the second reflecting surface S1 and the 3rd reflecting surface
The incidence angle of S3, k is interference level, and k values are positive integer.
Finely tuned in the present embodiment and drive pedestal selection millimeter magnitude microelectron-mechanical regulation pedestal or millimeter magnitude piezoelectricity pottery
Porcelain finely tunes pedestal.
The adjusting method of the etalon of the present embodiment Wavelength tunable, comprises the following steps：
Step 1, from centre wavelength computing formula λ=2 × n × L × cos θ/k, center wavelength variation value Δ λ=2 × n × Δ L
× cos θ/k, according to Δ λ value, the refractive index n values of air, the incidence angle θ value and interference level k values of light beam calculate chamber long
Variation delta L；
Step 2, by formula Δ L=Δs H × tan α, according to the Δ L values that angle α value and the step 1 are calculated, draws Δ H
Value,
Step 3, according to the Δ H values that the step 2 is obtained, vertically moves wedge shape substrate 2,
Step 4, when Δ H values are less than zero, then vertically moves up wedge-shaped substrate 2, and the distance for moving up is Δ H；
When Δ H values are more than zero, then wedge shape substrate 2 is moved vertically downwards, the distance for moving down is | Δ H |.
α is 1 ' in the present embodiment（0.017°）, θ is 0 °, n=1, a length of 100 μm of the initial cavity of etalon, and k is positive integer,
When centre wavelength increases 4nm, i.e. Δ λ value for 4nm near 1064nm, during by Δ λ=2 × n × Δ L × cos θ/k, Δ L=can be obtained
K × Δ λ/2, then Δ L=2 × knm,
When k takes different numerical value, corresponding Δ L values are obtained, be shown in Table 1.1：
When table 1.1k takes different numerical value, corresponding Δ L values
| k | 187 | 188 | 189 |
| ΔL（μm） | 0.374 | 0.376 | 0.378 |
α is 1 '（0.017°）, tan0.017 °=0.0002967, Δ L=Δs H × tan α, it is known that Δ H=Δ L/ tan α,
Then the corresponding Δ H values of Δ L are shown in Table 1.2：
The corresponding Δ H values of the Δ L values of table 1.2
| ΔL（μm） | 0.374 | 0.376 | 0.378 |
| ΔH（mm） | 1.261 | 1.267 | 1.274 |
From table 1.2, when centre wavelength increases 4nm, i.e. Δ λ value for 4nm near 1064nm.Take 187 respectively as k, 188,
When 189, the change of cavity length of correspondence etalon is only respectively to increase by 0.374 μm, 0.376 μm, 0.378 μm, and wedge-shaped substrate is perpendicular
Straight downward movement is respectively 1.261mm, 1.267mm, 1.274mm, it is seen then that wedge-shaped substrate moves the millimetre-sized order of magnitude just meeting
Cause chamber long（The center thickness of etalon）There is the change of several microns of zero point, thus be easily achieved the accurate of centre wavelength
Control.
Embodiment 2
α is 1 ' in the present embodiment（0.017°）, θ is 0 °, n=1, a length of 100 μm of the initial cavity of etalon, and k is positive integer, central
Cardiac wave 10nm, i.e. the Δ λ value of increasing near 1560nm long during by Δ λ=2 × n × Δ L × cos θ/k, can obtain Δ L=k for 10nm
× Δ λ/2, then Δ L=5 × knm,
When k takes different numerical value, corresponding Δ L values are obtained, be shown in Table 2.1：
When the k of table 2.1 takes different numerical value, corresponding Δ L values
| k | 128 | 129 | 130 |
| ΔL（μm） | 0.64 | 0.645 | 0.65 |
α is 1 '（0.017°）, tan0.017 °=0.0002967, Δ L=Δs H × tan α, it is known that Δ H=Δ L/ tan α,
Then the corresponding Δ H values of Δ L are shown in Table 2.2：
The corresponding Δ H values of the Δ L values of table 2.2
| ΔL（μm） | 0.64 | 0.645 | 0.65 |
| ΔH（mm） | 2.157 | 2.174 | 2.191 |
From table 2.2, when centre wavelength increases 10nm, i.e. Δ λ value for 10nm near 1560nm.Take 128 respectively as k,
129th, 130 when, corresponding change of cavity length is only respectively to increase by 0.64 μm, 0.645 μm, 0.65 μm, and wedge-shaped substrate vertically to
Under movement be respectively 2.157mm, 2.174mm, 2.191mm, it is seen then that wedge-shaped substrate moves the millimetre-sized order of magnitude can just be caused
Chamber is long（The center thickness of etalon）There is the change of several microns of zero point, thus be easily achieved the accurate control of centre wavelength
System.
In the present embodiment, remaining technical scheme is with embodiment 1.
Embodiment 3
α is 0.1 ' in the present embodiment（0.0017°）, θ is 0 °, n=1, a length of 30 μm of the initial cavity of etalon, and k is positive integer, when
Centre wavelength reduces 4nm, i.e. Δ λ value for -4nm near 1064nm, during by Δ λ=2 × n × Δ L × cos θ/k, can obtain Δ L=k
× Δ λ/2, then Δ L=2 × knm,
When k takes different numerical value, corresponding Δ L values are obtained, be shown in Table 3.1：
When the k of table 3.1 takes different numerical value, corresponding Δ L values
| k | 55 | 56 | 57 |
| ΔL（μm） | -0.11 | -0.112 | -0.114 |
α is 1 '（0.017°）, tan0.017 °=0.00002967, Δ L=Δs H × tan α, it is known that Δ H=Δ L/ tan α,
Then the corresponding Δ H values of Δ L are shown in Table 3.2：
The corresponding Δ H values of the Δ L values of table 3.2
| ΔL（μm） | -0.11 | -0.112 | -0.114 |
| ΔH（mm） | -3.707 | -3.775 | -3.842 |
From table 3.2, when centre wavelength reduces 4nm, i.e. Δ λ value for -4nm near 1064nm.Take 56 respectively as k, 57,
When 58, corresponding change of cavity length is only respectively to reduce 0.11 μm, 0.112 μm, 0.114 μm, and wedge-shaped substrate is straight up
It is mobile to be respectively 3.707mm, 3.775mm, 3.842mm, it is seen then that wedge-shaped substrate moves the millimetre-sized order of magnitude can just cause chamber long
（The center thickness of etalon）There is the change of several microns of zero point, thus be easily achieved the precise control of centre wavelength.
In the present embodiment, remaining technical scheme is with embodiment 1.
Although above-described embodiment makes specific descriptions to the present invention, come for one of ordinary skill in the art
Say, it is understood that can be modified based on present disclosure within spirit and scope of the invention not departing from
Or improve, these modification and improvement are all within spirit and scope of the invention.
Claims (5)
1. a kind of etalon of Wavelength tunable, it is characterised in that the etalon includes rectangle substrate（1）With wedge-shaped substrate（2）, institute
State rectangle substrate（1）Including the first reflecting surface S1（11）With the second reflecting surface S2（12）, the wedge-shaped substrate（2）It is anti-including the 3rd
Penetrate face S3（21）With the 4th reflecting surface S4（22）, the second reflecting surface S2（12）With the 3rd reflecting surface S3（21）Between form humorous
Shake chamber（3）, the second reflecting surface S2（12）With the 3rd reflecting surface S3（21）The distance between L be resonator（3）Chamber it is long, institute
State the 3rd reflecting surface S3（21）It is relative to the second reflecting surface S2（12）Inclined inclined-plane, the 3rd reflecting surface S3（21）With
Two reflecting surface S2（12）Between angle α for 0.1 ' -1 ', the rectangle substrate（1）It is vertically fixed on pedestal（4）On, the wedge
Shape substrate（2）Lower end drives pedestal by finely tuning（5）It is arranged on pedestal（6）On, drive pedestal by finely tuning（5）Up and down motion band
Dynamic wedge shape substrate（2）Vertically move up and down, wedge-shaped substrate（2）Move up and down so as to reach the change of chamber L long, so that real
The change of existing central wavelength lambda, the height of the wedge-shaped substrate is H, and the changing value that the wedge-shaped substrate is moved up and down is designated as Δ H,
Chamber changing value long is designated as Δ L, the Δ L=Δs H × tan α.
2. the etalon of Wavelength tunable according to claim 1, it is characterised in that incident light beam is in the second reflecting surface S2
（12）With the 3rd reflecting surface S3（21）Between multiple reflections form multiple-beam interference, the central wavelength lambda of multiple-beam interference and thickness L
Between relation be：Central wavelength lambda=2 of multiple-beam interference × n × L × cos θ/k, the n is rectangle substrate（1）With wedge-shaped base
Piece（2）Between air refractive index, θ be light beam in the second reflecting surface S1（12）With the 3rd reflecting surface S3（21）Incidence angle, k
It is interference level, k values are positive integer.
3. the etalon of Wavelength tunable according to claim 1, it is characterised in that it is millimeter amount that the fine setting drives pedestal
Level microelectron-mechanical regulation pedestal.
4. the etalon of Wavelength tunable according to claim 1, it is characterised in that it is millimeter amount that the fine setting drives pedestal
Level piezoelectric ceramics fine setting pedestal.
5. the adjusting method of the etalon of the Wavelength tunable described in a kind of claim 2, it is characterised in that comprise the following steps：
Step 1, from centre wavelength computing formula λ=2 × n × L × cos θ/k, center wavelength variation value Δ λ=2 × n × Δ L
× cos θ/k, according to Δ λ value, the refractive index n values of air, the incidence angle θ value and interference level k values of light beam calculate chamber long
Variation delta L；
Step 2, by formula Δ L=Δs H × tan α, according to the Δ L values that angle α value and the step 1 are calculated, draws Δ H
Value,
Step 3, according to the Δ H values that the step 2 is obtained, vertically mobile wedge-shaped substrate（2）,
Step 4, when Δ H values are less than zero, then vertically moves up wedge-shaped substrate（2）, the distance for moving up is Δ
H；When Δ H values are more than zero, then wedge shape substrate is moved vertically downwards（2）, the distance for moving down is | Δ H |.
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101982801A (en) * | 2010-10-12 | 2011-03-02 | 华中科技大学 | Piezoelectric-driven F-P cavity tunable filter |
| CN103872563A (en) * | 2014-03-24 | 2014-06-18 | 苏州旭创科技有限公司 | Tunable optical standards and external cavity laser with the same |
| CN103885175A (en) * | 2014-03-27 | 2014-06-25 | 苏州旭创科技有限公司 | Optical etalon |
| US20160135275A1 (en) * | 2013-06-28 | 2016-05-12 | Trumpf Lasersystems For Semiconductor Manufacturing Gmbh | EUV Radiation Generating Device Including a Beam Influencing Optical Unit |
| CN206431362U (en) * | 2016-12-16 | 2017-08-22 | 浙江中电智能科技有限公司 | A kind of etalon of Wavelength tunable |
-
2016
- 2016-12-16 CN CN201611169455.1A patent/CN106773015A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101982801A (en) * | 2010-10-12 | 2011-03-02 | 华中科技大学 | Piezoelectric-driven F-P cavity tunable filter |
| US20160135275A1 (en) * | 2013-06-28 | 2016-05-12 | Trumpf Lasersystems For Semiconductor Manufacturing Gmbh | EUV Radiation Generating Device Including a Beam Influencing Optical Unit |
| CN103872563A (en) * | 2014-03-24 | 2014-06-18 | 苏州旭创科技有限公司 | Tunable optical standards and external cavity laser with the same |
| CN103885175A (en) * | 2014-03-27 | 2014-06-25 | 苏州旭创科技有限公司 | Optical etalon |
| CN206431362U (en) * | 2016-12-16 | 2017-08-22 | 浙江中电智能科技有限公司 | A kind of etalon of Wavelength tunable |
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