CN106757141A - Method for improving photoelectrochemical property of silicon/metal oxide nanowire array - Google Patents
Method for improving photoelectrochemical property of silicon/metal oxide nanowire array Download PDFInfo
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- CN106757141A CN106757141A CN201610996007.2A CN201610996007A CN106757141A CN 106757141 A CN106757141 A CN 106757141A CN 201610996007 A CN201610996007 A CN 201610996007A CN 106757141 A CN106757141 A CN 106757141A
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- 239000010703 silicon Substances 0.000 title claims abstract description 71
- 229910052814 silicon oxide Inorganic materials 0.000 title claims abstract description 63
- 239000002070 nanowire Substances 0.000 title claims abstract description 55
- 238000000034 method Methods 0.000 title claims abstract description 37
- 229910044991 metal oxide Inorganic materials 0.000 title claims abstract description 30
- 150000004706 metal oxides Chemical class 0.000 title claims abstract description 30
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical group [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 46
- 230000005518 electrochemistry Effects 0.000 claims description 25
- 230000003287 optical effect Effects 0.000 claims description 25
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 10
- 229910000428 cobalt oxide Inorganic materials 0.000 claims description 9
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical compound Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 claims description 7
- 229940075397 calomel Drugs 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 5
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 2
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 9
- 238000000354 decomposition reaction Methods 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 230000008569 process Effects 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 55
- 238000003491 array Methods 0.000 description 20
- 238000004502 linear sweep voltammetry Methods 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 8
- 230000005693 optoelectronics Effects 0.000 description 7
- 230000000052 comparative effect Effects 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
- 239000003792 electrolyte Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910000807 Ga alloy Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000003822 epoxy resin Substances 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- 229920000647 polyepoxide Polymers 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003426 co-catalyst Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- WBZKQQHYRPRKNJ-UHFFFAOYSA-L disulfite Chemical compound [O-]S(=O)S([O-])(=O)=O WBZKQQHYRPRKNJ-UHFFFAOYSA-L 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B11/00—Electrodes; Manufacture thereof not otherwise provided for
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/01—Products
- C25B1/02—Hydrogen or oxygen
- C25B1/04—Hydrogen or oxygen by electrolysis of water
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/50—Processes
- C25B1/55—Photoelectrolysis
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/30—Hydrogen technology
- Y02E60/36—Hydrogen production from non-carbon containing sources, e.g. by water electrolysis
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/10—Process efficiency
- Y02P20/133—Renewable energy sources, e.g. sunlight
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The invention discloses a method for improving photoelectrochemical properties of a silicon/metal oxide nanowire array, namely, a silicon/metal oxide nanowire array is subjected to photoelectrochemical treatment. The method improves the photoelectrochemical property by carrying out photoelectrochemical treatment on the silicon/metal oxide nanowire array, fills the blank of the prior art, improves the photoelectrochemical property of the semiconductor photoelectrode by using the method, has low cost and simple process, is convenient and effective, not only further improves the photoelectrochemical water decomposition efficiency, but also makes the advanced technology possible to really realize practicality.
Description
Technical field
The present invention relates to technical field of nano material application.Silicon/metal oxide nano is improved more particularly, to one kind
The method of linear array photoelectrochemical behaviour.
Background technology
Hydrogen Energy is considered as one of following energy for most cleaning.Photoelectrochemistry of semiconductor decomposition water system is realized using solar energy
Hydrogen, is an effective way of cleaning preparation Hydrogen Energy.And during this, semiconductor photoelectrode is to determine that Optical Electro-Chemistry is decomposed
The key factor of water efficiency.
People take multiple means and strategy, and all many-sides such as composition, pattern, structure from optoelectronic pole are optimized.
People developed based on two kinds (or more) semi-conducting material composition complex light electrode, overcome single semiconductor in Optical Electro-Chemistry
Band gap present in decomposition water application is too wide, bandedge placement is improper, the low problem of photo-generated carrier utilization rate.In electrode structure
Aspect, nanometer technology is also widely used for the preparation of optoelectronic pole to improve its performance.Compared with traditional plane optoelectronic pole,
The optoelectronic pole performance constructed with zero dimension, a peacekeeping two-dimension nano materials is increased dramatically.Based on it in Optical Electro-Chemistry decomposition water
Advantage and great potential that application aspect shows, semiconductor one-dimensional nano structure complex light electrode research receive more and more
Concern.
Due to decomposition water kinetics in surface is slow and surface defect state caused by Carrier recombination, fermi level pinning
The reasons such as effect, also have between the performance of optoelectronic pole and its theoretical value and there is larger gap.Therefore, it has been proposed that using co-catalyst
Or surface passivator carries out surface modification to optoelectronic pole to lift its photoelectrochemical behaviour.But, surface modification prepares electrode
Technique is more complicated, and surface catalyst and passivator can also influence absorption of the optoelectronic pole to light, and cost (your gold is there is likely to be in addition
Category), long-time stability, electric conductivity the problems such as.
Therefore, the invention provides a kind of method for lifting silicon/metal oxide nano-wire array photoelectric chemical property, fill out
The blank of prior art is mended, semiconductor photoelectrode photoelectrochemical behaviour not only low cost, and technique letter have been lifted using the method
It is single, it is more convenient effectively further to improve Optical Electro-Chemistry decomposition water efficiency, this advanced technology is really realized practical.
The content of the invention
It is an object of the invention to provide a kind of method for improving silicon/metal oxide nano-wire array photoelectric chemical property.
To reach above-mentioned purpose, the present invention uses following technical proposals：
A kind of method for improving silicon/metal oxide nano-wire array photoelectric chemical property, methods described is to silicon/metal
Oxidate nano linear array carries out Optical Electro-Chemistry treatment.
Preferably, the described method comprises the following steps：Under simulated solar light irradiation, by silicon/metal oxide nano-wire
Array is placed in strong base solution, and constant potential is continuously applied to silicon/metal oxide nano-wire array.
Preferably, methods described is used for three-electrode system, respectively with platinum plate electrode, calomel electrode in three-electrode system
And silicon/metal oxide nano-wire array is to electrode, reference electrode and working electrode (SCE).
Preferably, the strong base solution is 1M NaOH or 1M KOH.
Preferably, the constant potential is 0.19-0.6V, relative to saturated calomel electrode (SCE).
Preferably, the duration is 1-5 hours.
Preferably, the metal oxide in the silicon/metal oxide nano-wire array is iron oxide, nickel oxide or oxidation
Cobalt, but it is not limited only to this three kinds of oxides.
Present inventors discovered unexpectedly that, by simulated solar light irradiation, be placed in strong base solution and apply it is constant
The Optical Electro-Chemistry treatment of the synergy of current potential three, the silicon for obtaining/metal oxide nano-wire array photoelectric stream is substantially improved.
Beneficial effects of the present invention are as follows：
Method the invention provides silicon/metal oxide nano-wire array photoelectric chemical property is improved, the method passes through
Optical Electro-Chemistry treatment is carried out to silicon/metal oxide nano-wire array to improve photoelectrochemical behaviour, has filled up prior art
Blank, semiconductor photoelectrode photoelectrochemical behaviour not only low cost, and process is simple are lifted using the method, convenient effective, no
Optical Electro-Chemistry decomposition water efficiency is only further improved, and it is practical this advanced technology is really realized.
Brief description of the drawings
Specific embodiment of the invention is described in further detail below in conjunction with the accompanying drawings.
Fig. 1 shows that silicon/iron oxide (a), silicon/nickel oxide (b) and the scanning electron of silicon/cobalt oxide (c) nano-wire array show
Micro mirror figure.
Fig. 2 shows that the silicon/iron oxide nanowire arrays of the embodiment of the present invention 1 process forward and backward linear by Optical Electro-Chemistry
Scanning volt-ampere (LSV) curve.
Fig. 3 shows that the silicon/nickel oxide nano linear array of the embodiment of the present invention 2 processes forward and backward linear by Optical Electro-Chemistry
Scanning volt-ampere (LSV) curve.
Fig. 4 shows that the silicon/cobalt oxide nano-wire array of the embodiment of the present invention 3 processes forward and backward linear by Optical Electro-Chemistry
Scanning volt-ampere (LSV) curve.
Fig. 5 shows the silicon/forward and backward linear sweep voltammetry (LSV) of iron oxide nanowire arrays treatment of comparative example of the present invention 1
Curve.
Fig. 6 shows the silicon/forward and backward linear sweep voltammetry (LSV) of iron oxide nanowire arrays treatment of comparative example of the present invention 2
Curve.
Fig. 7 shows the silicon/forward and backward linear sweep voltammetry (LSV) of iron oxide nanowire arrays treatment of comparative example of the present invention 3
Curve.
Specific embodiment
In order to illustrate more clearly of the present invention, the present invention is done further with reference to preferred embodiments and drawings
It is bright.Similar part is indicated with identical reference in accompanying drawing.It will be appreciated by those skilled in the art that institute is specific below
The content of description is illustrative and be not restrictive, and should not be limited the scope of the invention with this.
Embodiment 1
With indium gallium alloy and copper sheet from silicon chip back side extraction wire, expose small area silicon/iron oxide nanowire arrays, remaining
Part is sealed with epoxy resin.Shown in the scanning electron microscope diagram of silicon/iron oxide nanowire arrays such as Fig. 1 (a).
Optical Electro-Chemistry treatment is carried out to silicon/iron oxide nanowire arrays：In three-electrode system, with respectively with platinized platinum electricity
Pole, calomel electrode (SCE) and silicon/iron oxide nanowire arrays are to electrode, reference electrode and working electrode；Electrolyte is 1M
NaOH, light source is AM1.5 simulated solar irradiations；Under simulated solar light irradiation, silicon/iron oxide nanowire arrays are placed in 1M
In NaOH, apply the current potential of 0.6V (relative to SCE) to working electrode with electrochemical workstation, continue 1 hour.At Optical Electro-Chemistry
Reason is forward and backward, and as a result test silicon/iron oxide nanowire arrays such as scheme in linear sweep voltammetry (LSV) curve of light on and off respectively
Shown in 2.From Figure 2 it can be seen that silicon/iron oxide nanowire arrays are greatly improved by photoelectric current after Optical Electro-Chemistry treatment.
Embodiment 2
With indium gallium alloy and copper sheet from silicon chip back side extraction wire, expose small area silicon/nickel oxide nano linear array, remaining
Part is sealed with epoxy resin.Shown in scanning electron microscope diagram such as Fig. 1 (b) of silicon/nickel oxide nano linear array.
Optical Electro-Chemistry treatment is carried out to silicon/nickel oxide nano linear array：In three-electrode system, with respectively with platinized platinum electricity
Pole, calomel electrode (SCE) and silicon/nickel oxide nano linear array are to electrode, reference electrode and working electrode；Electrolyte is 1M
KOH, light source is AM1.5 simulated solar irradiations；Under simulated solar light irradiation, silicon/nickel oxide nano linear array is placed in 1M KOH
In, apply the current potential of 0.19V (relative to SCE) to working electrode with electrochemical workstation, continue 5 hours.Optical Electro-Chemistry treatment
It is forward and backward, linear sweep voltammetry (LSV) curve of test silicon/nickel oxide nano linear array in light on and off is distinguished, as a result such as Fig. 3
It is shown.As seen from Figure 3, silicon/nickel oxide nano linear array is greatly improved by photoelectric current after Optical Electro-Chemistry treatment.
Embodiment 3
With indium gallium alloy and copper sheet from silicon chip back side extraction wire, expose small area silicon/cobalt oxide nano-wire array, remaining
Part is sealed with epoxy resin.Shown in scanning electron microscope diagram such as Fig. 1 (c) of silicon/cobalt oxide nano-wire array.
Optical Electro-Chemistry treatment is carried out to silicon/cobalt oxide nano-wire array：In three-electrode system, with respectively with platinized platinum electricity
Pole, calomel electrode (SCE) and silicon/nickel oxide nano linear array are to electrode, reference electrode and working electrode；Electrolyte is 1M
NaOH, light source is AM1.5 simulated solar irradiations；Under simulated solar light irradiation, silicon/cobalt oxide nano-wire array is placed in 1M
In NaOH, apply the current potential of 0.6V (relative to SCE) to working electrode with electrochemical workstation, continue 5 hours.At Optical Electro-Chemistry
Reason is forward and backward, respectively linear sweep voltammetry (LSV) curve of test silicon/cobalt oxide nano-wire array under continuous light, as a result such as
Shown in Fig. 4.From fig. 4, it can be seen that silicon/cobalt oxide nano-wire array is greatly improved by photoelectric current after Optical Electro-Chemistry treatment.
Comparative example 1
Silicon/iron oxide nanowire arrays are carried out with Optical Electro-Chemistry processing method with embodiment 1, difference is：Processing procedure
Carried out under dark condition.Test silicon/iron oxide nanowire arrays are tied in linear sweep voltammetry (LSV) curve of light on and off
Fruit is as shown in Figure 5.As seen from Figure 5, the photoelectric current that silicon/iron oxide nanowire arrays do not apply after simulated solar photo-irradiation treatment is close
Degree is less than embodiment 1.
Comparative example 2
Silicon/iron oxide nanowire arrays are carried out with Optical Electro-Chemistry processing method with embodiment 1, difference is：Processing procedure
In not to working electrode apply constant potential.Linear sweep voltammetry of the test silicon/iron oxide nanowire arrays in light on and off
(LSV) curve, as a result as shown in Figure 6.As seen from Figure 6, silicon/iron oxide nanowire arrays do not apply the photoelectricity of constant potential treatment
Current density is less than embodiment 1.
Comparative example 3
Silicon/iron oxide nanowire arrays are carried out with Optical Electro-Chemistry processing method with embodiment 1, difference is：Processing procedure
Middle use electrolyte is 1M metabisulfite solutions.Linear sweep voltammetry of the test silicon/iron oxide nanowire arrays in light on and off
(LSV) curve, as a result as shown in Figure 6.As seen from Figure 6, the light after silicon/iron oxide nanowire arrays are processed in neutral electrolyte
Current density is less than embodiment 1.
Conclusion：Simulated solar light irradiation, be placed in strong base solution and apply constant potential between cooperate, collaboration make
With, make that the action effect of its lifting photoelectric properties is optimal, lacking either condition its photoelectrochemical behaviour can not all be obviously improved very
To decline.The present invention not only further improves Optical Electro-Chemistry decomposition water efficiency, and this advanced technology is possible to real reality
It is existing practical.
Obviously, the above embodiment of the present invention is only intended to clearly illustrate example of the present invention, and is not right
The restriction of embodiments of the present invention, for those of ordinary skill in the field, may be used also on the basis of the above description
To make other changes in different forms, all of implementation method cannot be exhaustive here, it is every to belong to this hair
Obvious change that bright technical scheme is extended out changes row still in protection scope of the present invention.
Claims (7)
1. a kind of method for improving silicon/metal oxide nano-wire array photoelectric chemical property, it is characterised in that methods described is
Optical Electro-Chemistry treatment is carried out to silicon/metal oxide nano-wire array.
2. it is according to claim 1 it is a kind of improve silicon/metal oxide nano-wire array photoelectric chemical property method, its
It is characterised by, the described method comprises the following steps：Under simulated solar light irradiation, silicon/metal oxide nano-wire array is put
In strong base solution, constant potential is continuously applied to silicon/metal oxide nano-wire array.
3. it is according to claim 2 it is a kind of improve silicon/metal oxide nano-wire array photoelectric chemical property method, its
Be characterised by, methods described be used for three-electrode system, in three-electrode system respectively with platinum plate electrode, calomel electrode (SCE) and
Silicon/metal oxide nano-wire array is to electrode, reference electrode and working electrode.
4. it is according to claim 2 it is a kind of improve silicon/metal oxide nano-wire array photoelectric chemical property method, its
It is characterised by, the strong base solution is 1M NaOH or 1M KOH.
5. it is according to claim 2 it is a kind of improve silicon/metal oxide nano-wire array photoelectric chemical property method, its
It is characterised by, the constant potential is 0.19-0.6V, relative to saturated calomel electrode.
6. it is according to claim 2 it is a kind of improve silicon/metal oxide nano-wire array photoelectric chemical property method, its
It is characterised by, the duration is 1-5 hours.
7. it is according to claim 2 it is a kind of improve silicon/metal oxide nano-wire array photoelectric chemical property method, its
It is characterised by, the metal oxide in the silicon/metal oxide nano-wire array is iron oxide, nickel oxide or cobalt oxide.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109252179A (en) * | 2018-09-19 | 2019-01-22 | 苏州大学 | A kind of double absorption layer light anode and preparation method for photocatalytic water |
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Application publication date: 20170531 |