CN106744860B - A kind of grapheme material preparation method and device preparation method - Google Patents
A kind of grapheme material preparation method and device preparation method Download PDFInfo
- Publication number
- CN106744860B CN106744860B CN201710065763.8A CN201710065763A CN106744860B CN 106744860 B CN106744860 B CN 106744860B CN 201710065763 A CN201710065763 A CN 201710065763A CN 106744860 B CN106744860 B CN 106744860B
- Authority
- CN
- China
- Prior art keywords
- graphene
- preparation
- carbon compound
- compound material
- carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Abstract
The invention belongs to field of material technology, disclose a kind of grapheme material preparation method, comprising: carbon compound material is placed in high vacuum environment；Using two beam different wave lengths laser irradiation the carbon compound material the same area.Present invention process preparation and transfer process are simple, compared with general graphene preparation method (such as, mechanical stripping method, ultrasonic wave liquid phase stripping method and electrochemical stripping method etc.) transfer process after existing graphene growth can be saved, avoid the damage of graphene in transfer process, this method can directly prepare graphene device simultaneously, it can simplify photoetching process needed for preparing graphene device, to reduce cost.
Description
Technical field
The present invention relates to field of material technology, in particular to a kind of grapheme material preparation method and device preparation method.
Background technique
Graphene is a kind of carbon atom of graphite as the three-dimensional structure carbon allotrope for being naturally present in nature
It is arranged in the material of the hexagon plane structure of two-dimensional sheet form.The carbon atom of graphene forms SP2Key, and have monatomic
The plane sheets form of thickness.
Graphene has significantly excellent electric conductivity and thermal conductivity, and physical property (such as excellent mechanical strength, softness
Property, elasticity, the quantization transparency depending on thickness, high-specific surface area etc.) it can be by the atom that is present in graphene
Specific bonding structure explain.Constitute three formation sp in four peripheral electrons of the carbon of graphene2Hybridized orbit to
With σ key, and a remaining electronics and surrounding carbon atom form a pi bond, to provide a hexagon two-dimensional structure.Cause
This, graphene has the band structure different from other carbon allotropes, and does not have band gap (band gap) to table
Reveal excellent electric conductivity；However, graphene is a kind of semi-metallic, wherein the fermi level density of states of electronics is 0, and
Whether it is doped depending on it, electrical characteristics can be easily varied.
It can be widely used in automobile, the energy, aviation, building, pharmacy and iron and steel domain accordingly, due to graphene,
And various electric and electronic fields, a new generation's material, capacitor, electromagnetic shielding material, sensor, display etc. can
Replace silicon electric and electronic material, therefore the technology in various fields using graphene has many researchs and carrying out.
As the method for preparing graphene, have studied using adhesive tape from graphite flake removing graphene single layer tape method or
Stripping method, chemical vapour deposition technique, by the epitaxial growth method that is layered on silicon carbide substrate (SiC), by using heating side
Hot stripping method, chemical oxidation and the reduction method etc. of formula removing graphite.
In these methods, chemical oxidation and the advantages of reduction method are can be mass produced, and provide economically feasible
Property, and various functional groups can be easily introduced into graphene film.But in this method, need using reducing agent (such as hydrazine
Deng) it is used for the deoxygenation of graphene oxide, wherein these reducing agents is most of due to highly corrosive, explosivity, human body
Toxicity etc. but danger, and prepared graphene may include impurity etc., so that electric conductivity may be decreased.
From the above, it can be seen that, it is still necessary to carry out the research that the method for graphene is prepared especially with economic, efficient process.
Summary of the invention
The present invention provides a kind of preparation of technique and transfer process is simple, the transfer process after saving existing graphene growth,
The damage of graphene in transfer process is avoided, while can directly prepare graphene device, can simplify and prepare graphene device
Photoetching process needed for part, to reduce cost grapheme material preparation method and device preparation method.
In order to solve the above technical problems, the present invention provides a kind of grapheme material preparation methods, comprising:
Carbon compound material is placed in high vacuum environment；
Using two beam different wave lengths laser irradiation the carbon compound material the same area.
Further, the same area of the laser irradiation using two beam different wave lengths in the carbon compound material
Include:
First beam superlaser irradiates carbon compound material surface, interrupts its chemical bond, and surface forms carbon ion and its
Its ion；
Other ions are evaporated, the carbon ion stays in the carbon compound material surface；
The carbon ion of the carbon compound material surface is stayed under the irradiation of the second beam superlaser described
Carbon compound material surface recombinates to form graphene；
The wavelength of the first beam superlaser and the second beam superlaser is not identical, the second beam superlaser
230~270nm of wave-length coverage.
Further, the wavelength of the second beam superlaser is 248nm.
Further, the carbon compound material includes: silicon carbide.
Further, the method also includes:
Change the irradiation position of the two beams different wave length laser according to particular path, forms graphene device figure.
A kind of graphene device preparation method is prepared using the method.
One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:
The grapheme material preparation method and device preparation method provided in the embodiment of the present application utilizes more than two beams swashing
Light is irradiated in high vacuum to containing carbon compound material, contains carbon compound material surface swashing in high-energy
Under light irradiation, chemical bond is interrupted, and surface forms carbon ion and other ions, since carbon ion in vacuum and other ions are full
Different with vapour pressure, other ions preferentially evaporate, and the remaining carbon ion in surface is recombinating shape containing carbon compound material surface
At graphene.Technique preparation and transfer process are simple, (e.g., mechanical stripping method, ultrasound compared with general graphene preparation method
Wave liquid phase stripping method and electrochemical stripping method etc.) transfer process after existing graphene growth can be saved, avoid transfer
The damage of graphene in the process, while this method can directly prepare graphene device, can simplify and prepare graphene device institute
The photoetching process needed, to reduce cost.This technology has high-precision to the preparation of graphene, graphically.Local reaction simultaneously
Energy is high, but reaction environment may be at relatively low temperature, and reaction process environmental protection is pollution-free.It is a kind of high-precision green
The graphene preparation method that colour circle is protected.
Specific embodiment
The embodiment of the present application is simple by providing a kind of preparation of technique and transfer process, after saving existing graphene growth
Transfer process avoids the damage of graphene in transfer process, while can directly prepare graphene device, can simplify preparation
Photoetching process needed for graphene device, to reduce cost grapheme material preparation method and device preparation method.
In order to better understand the above technical scheme, below in conjunction with specification and specific embodiment to above-mentioned technology
Scheme is described in detail, it should be understood that the specific features in the embodiment of the present invention and embodiment are to technical scheme
Detailed description, rather than the restriction to technical scheme, in the absence of conflict, the embodiment of the present application and reality
The technical characteristic applied in example can be combined with each other.
A kind of grapheme material preparation method, comprising:
Carbon compound material is placed in high vacuum environment；
Using two beam different wave lengths laser irradiation the carbon compound material the same area.
Further, the same area of the laser irradiation using two beam different wave lengths in the carbon compound material
Include:
First beam superlaser irradiates carbon compound material surface, interrupts its chemical bond, and surface forms carbon ion and its
Its ion；
Other ions are evaporated, the carbon ion stays in the carbon compound material surface；
The carbon ion of the carbon compound material surface is stayed under the irradiation of the second beam superlaser described
Carbon compound material surface recombinates to form graphene；
The wavelength of the first beam superlaser and the second beam superlaser is not identical, the second beam superlaser
230~270nm of wave-length coverage.
Further, the wavelength of the second beam superlaser is 248nm.
Further, the carbon compound material includes: silicon carbide.
Further, the method also includes:
Change the irradiation position of the two beams different wave length laser according to particular path, forms graphene device figure.
A kind of graphene device preparation method is prepared using the method.
It will illustrate this method by a specific method below.
1: two beam laser irradiation SiC of example prepares grapheme material and device
Prepare carbon compound material, such as SiC, appropriate surface treatment and cleaning
It is intracavitary that SiC is put into high vacuum 1.333 × 10^-1~1.333 × 10^-6Pa, keeps high vacuum
With two beam laser, infrared wavelength 1063nm and ultraviolet 266nm irradiation SiC are formed on its surface required graphene.
By the shift position SiC, different location irradiation is carried out, forms graphene figure.
The purpose of the present invention is to provide a kind of practical grapheme material and device preparation methods, to solve current graphite
Requirement needed for electronic device is not achieved in performance and size in the preparation of alkene material, while the present invention also provides one kind and directly prepares stone
The technological approaches of black alkene device, can simplify photoetching process needed for preparing graphene device, to reduce cost and raising property
Energy.
One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:
The grapheme material preparation method and device preparation method provided in the embodiment of the present application utilizes more than two beams swashing
Light is irradiated in high vacuum to containing carbon compound material, contains carbon compound material surface swashing in high-energy
Under light irradiation, chemical bond is interrupted, and surface forms carbon ion and other ions, since carbon ion in vacuum and other ions are full
Different with vapour pressure, other ions preferentially evaporate, and the remaining carbon ion in surface is recombinating shape containing carbon compound material surface
At graphene.
Technique preparation and transfer process are simple, (e.g., mechanical stripping method, ultrasound compared with general graphene preparation method
Wave liquid phase stripping method and electrochemical stripping method etc.) transfer process after existing graphene growth can be saved, avoid transfer
The damage of graphene in the process, while this method can directly prepare graphene device, can simplify and prepare graphene device institute
The photoetching process needed, to reduce cost.This technology has high-precision to the preparation of graphene, graphically.Local reaction simultaneously
Energy is high, but reaction environment may be at relatively low temperature, and reaction process environmental protection is pollution-free.It is a kind of high-precision green
The graphene preparation method that colour circle is protected.
It should be noted last that the above specific embodiment is only used to illustrate the technical scheme of the present invention and not to limit it,
Although being described the invention in detail referring to example, those skilled in the art should understand that, it can be to the present invention
Technical solution be modified or replaced equivalently, without departing from the spirit and scope of the technical solution of the present invention, should all cover
In the scope of the claims of the present invention.
Claims (5)
1. a kind of grapheme material preparation method characterized by comprising
Carbon compound material is placed in high vacuum environment；
Using two beam different wave lengths laser irradiation the carbon compound material the same area；
It is described to include: in the same area of the carbon compound material using the laser irradiation of two beam different wave lengths
First beam superlaser irradiates carbon compound material surface, interrupts its chemical bond, surface formed carbon ion and it is other from
Son；
Other ions are evaporated, the carbon ion stays in the carbon compound material surface；
The carbon ion of the carbon compound material surface is stayed under the irradiation of the second beam superlaser described carbon containing
Compound-material surface recombinates to form graphene；
The wavelength of the first beam superlaser and the second beam superlaser is not identical, the wave of the second beam superlaser
Long 230~270nm of range.
2. grapheme material preparation method as described in claim 1, it is characterised in that: the wavelength of the second beam superlaser
For 248nm.
3. grapheme material preparation method as claimed in claim 2, which is characterized in that the carbon compound material includes:
Silicon carbide.
4. grapheme material preparation method as claimed in any one of claims 1 to 3, which is characterized in that the method also includes:
Change the irradiation position of the two beams different wave length laser according to particular path, forms graphene device figure.
5. a kind of graphene device preparation method, which is characterized in that prepared using method as claimed in claim 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710065763.8A CN106744860B (en) | 2017-02-06 | 2017-02-06 | A kind of grapheme material preparation method and device preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710065763.8A CN106744860B (en) | 2017-02-06 | 2017-02-06 | A kind of grapheme material preparation method and device preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106744860A CN106744860A (en) | 2017-05-31 |
| CN106744860B true CN106744860B (en) | 2019-04-30 |
Family
ID=58956186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710065763.8A Active CN106744860B (en) | 2017-02-06 | 2017-02-06 | A kind of grapheme material preparation method and device preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106744860B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107686761B (en) * | 2017-08-16 | 2020-06-23 | 济南大学 | In-situ rapid preparation method of noctilucent algae-like graphene-coated silicon carbide microspheres |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101607707A (en) * | 2009-06-27 | 2009-12-23 | 兰州大学 | Adopt electronic beam irradiation technology to prepare the method for Graphene |
| CN101913598A (en) * | 2010-08-06 | 2010-12-15 | 浙江大学 | Method for preparing graphene membrane |
| CN102502613A (en) * | 2011-11-25 | 2012-06-20 | 北京工业大学 | Method for directly preparing graphene by aid of laser radiation of silicon carbide |
| CN103011136A (en) * | 2011-09-23 | 2013-04-03 | 浙江大学 | Method for synthetizing graphene film |
| CN103508450A (en) * | 2013-09-11 | 2014-01-15 | 清华大学 | Laser preparation method for large-area patterned graphene |
-
2017
- 2017-02-06 CN CN201710065763.8A patent/CN106744860B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101607707A (en) * | 2009-06-27 | 2009-12-23 | 兰州大学 | Adopt electronic beam irradiation technology to prepare the method for Graphene |
| CN101913598A (en) * | 2010-08-06 | 2010-12-15 | 浙江大学 | Method for preparing graphene membrane |
| CN103011136A (en) * | 2011-09-23 | 2013-04-03 | 浙江大学 | Method for synthetizing graphene film |
| CN102502613A (en) * | 2011-11-25 | 2012-06-20 | 北京工业大学 | Method for directly preparing graphene by aid of laser radiation of silicon carbide |
| CN103508450A (en) * | 2013-09-11 | 2014-01-15 | 清华大学 | Laser preparation method for large-area patterned graphene |
Non-Patent Citations (1)
| Title |
|---|
| Laser-Synthesized Epitaxial Graphene;Sangwon Lee等;《ACSNANO》;20101201;第4卷(第12期);第7529页实验部分 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106744860A (en) | 2017-05-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Kistanov et al. | The role of H2O and O2 molecules and phosphorus vacancies in the structure instability of phosphorene | |
| Xu et al. | Hydrogenated borophene as a stable two-dimensional Dirac material with an ultrahigh Fermi velocity | |
| De Crescenzi et al. | Formation of silicene nanosheets on graphite | |
| Wu et al. | Selective surface functionalization at regions of high local curvature in graphene | |
| Li et al. | Graphene films with large domain size by a two-step chemical vapor deposition process | |
| Halim et al. | Transparent conductive two-dimensional titanium carbide epitaxial thin films | |
| Chang et al. | Band gap engineering of chemical vapor deposited graphene by in situ BN doping | |
| Yamada et al. | Low-temperature graphene synthesis using microwave plasma CVD | |
| Tay et al. | Trimethylamine borane: a new single-source precursor for monolayer h-BN single crystals and h-BCN thin films | |
| Aldave et al. | Characterization and sonochemical synthesis of black phosphorus from red phosphorus | |
| Cao et al. | The influence of interface structure on the electrical conductivity of graphene embedded in aluminum matrix | |
| Liu et al. | Hexagonal M 2 C 3 (M= As, Sb, and Bi) monolayers: new functional materials with desirable band gaps and ultrahigh carrier mobility | |
| Liu et al. | Prediction of a new BeC monolayer with perfectly planar tetracoordinate carbons | |
| Van Khai et al. | Synthesis and characterization of single-and few-layer mica nanosheets by the microwave-assisted solvothermal approach | |
| Kang et al. | Efficient heat generation in large-area graphene films by electromagnetic wave absorption | |
| CN106744860B (en) | A kind of grapheme material preparation method and device preparation method | |
| Bhimanapati et al. | Synthesis and radiation response of BCON: a graphene oxide and hexagonal boron nitride hybrid | |
| Jiang et al. | Boron ink assisted in situ boron nitride coatings for anti-oxidation and anti-corrosion applications | |
| Li et al. | The effect of oxidation on the electronic properties of penta-graphene: first-principles calculation | |
| Zhao et al. | Gold intercalation of boron-doped graphene on Ni (111): XPS and DFT study | |
| He et al. | Hydrogenated antimonene as quantum spin Hall insulator: A first-principles study | |
| Heya et al. | Guidelines for bottom-up approach of nanocarbon film formation from pentacene using heated tungsten on quartz substrate without metal catalyst | |
| KR101479217B1 (en) | Decrease of work function using doped graphene | |
| Yu et al. | Fabrication and characterization of Au-doped ZnO nanocandles synthesized on diamond film | |
| Niu | Tunnel anisotropic magnetoresistance in graphene with Rashba spin–orbit interaction |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |