CN106744659A - Research method based on laser controlling nanostructured silicon substrate surface form - Google Patents
Research method based on laser controlling nanostructured silicon substrate surface form Download PDFInfo
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- CN106744659A CN106744659A CN201611150104.6A CN201611150104A CN106744659A CN 106744659 A CN106744659 A CN 106744659A CN 201611150104 A CN201611150104 A CN 201611150104A CN 106744659 A CN106744659 A CN 106744659A
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- Prior art keywords
- silicon substrate
- substrate surface
- surface form
- nanostructured
- laser
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 108
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 108
- 239000010703 silicon Substances 0.000 title claims abstract description 108
- 239000000758 substrate Substances 0.000 title claims abstract description 93
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000011160 research Methods 0.000 title claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 58
- 239000002086 nanomaterial Substances 0.000 claims abstract description 3
- 239000011810 insulating material Substances 0.000 claims description 13
- 239000004411 aluminium Substances 0.000 claims description 12
- 239000010425 asbestos Substances 0.000 claims description 12
- 229910052895 riebeckite Inorganic materials 0.000 claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 238000004140 cleaning Methods 0.000 abstract description 2
- 230000007613 environmental effect Effects 0.000 abstract description 2
- 238000002474 experimental method Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229920000742 Cotton Polymers 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical compound [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004660 morphological change Effects 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Abstract
The invention discloses a kind of research method based on laser controlling nanostructured silicon substrate surface form：First, the silicon substrate of the material nanostructured of different thermal conductivity is used respectively；2nd, the silicon substrate of laser irradiation of nano structure；3rd, silicon substrate surface form is observed, and measures the raised draw ratio of silicon substrate surface.4th, the Changing Pattern of silicon substrate surface form is summarized.The present invention has following features：First, changing nanostructured silicon substrate surface form by the thermal conductivity of contact material.Second, be irradiated to nanostructured silicon substrate with laser, cleaning, environmental protection, any pollution is not produced.Third, the time needed for changing nanostructured silicon substrate surface form is short, efficiency high.
Description
Technical field
The invention belongs to nanostructured studying technological domain, and in particular to one kind is based on laser controlling nanostructured silicon substrate table
The research method of face form.
Background technology
The silica-base material of nanostructured is the new material grown up based on silicon materials, in MEMS (micro-electro-mechanical systems
System) more and more important effect is played in field.With continuing to develop and perfect for MEMS (MEMS), these are miniature
What silicon substrate surface form required on device also became becomes increasingly complex and variation.
Have been able to mold silicon substrate surface form on the silica-base material of nanostructured at present, but the technology also less into
It is ripe, it is mainly manifested in and how goes to control silicon substrate surface form.For changing the silicon substrate surface form on nanostructured silica-base material,
More common at present is the wet etching technique in the U.S..The technology is by wet etching repeatedly, so as to realize that control is received
The structure silicon-based configuration of surface of rice.The defect of the technology is to etch the silicon substrate surface form come for the first time to influence second quarter
The configuration of surface of erosion, makes the silicon substrate surface form of second etching distortion occur, and such silicon substrate surface form is apparently not very
It is preferable.
The content of the invention
Based on the defect that above-mentioned prior art is present, the present invention will propose that one kind is based on laser controlling nanostructured silicon substrate table
The research method of face form.
The present invention is adopted the following technical scheme that：
First technical scheme：
The research method of laser controlling nanostructured silicon substrate surface form, specifically can be as follows：
Step one, respectively with the silicon substrate of the material nanostructured of different thermal conductivity；
The silicon substrate of step 2, laser irradiation of nano structure；
Step 3, silicon substrate surface form can be observed under AFM (AFM), and it is corresponding to measure silicon substrate surface
Raised draw ratio.
Step 4, the Changing Pattern for summarizing silicon substrate surface form.
Preferably, the material selection of different thermal conductivity：Heat-insulating material, same material, Heat Conduction Material.
Preferably, heat-insulating material selects silicon, Heat Conduction Material aluminium from asbestos, same material.
Second technical scheme：The research method of laser controlling nanostructured silicon substrate surface form, it is as follows：
Step one, with the silicon substrate surrounding of the material nanostructured of different thermal conductivity；
Step 2, laser is irradiated to the silicon substrate of nanostructured；
Step 3, closes laser, the silicon substrate after observation laser irradiation；For example, the silicon substrate after laser is irradiated is placed on
Observed under AFM (AFM).
Step 4, measures the configuration of surface of silicon substrate.For example, measuring the silicon after changing by AFM (AFM)
Primary surface form.
Preferably, the material selection of different thermal conductivity：Heat-insulating material, same material, Heat Conduction Material.
Preferably, heat-insulating material is asbestos, and same material is silicon, and Heat Conduction Material is aluminium.
Preferably, step one, the left and right face of silicon substrate is contacted with heat-insulating material, Heat Conduction Material and heat-insulating material, with thermal insulation
Material, same material, heat-insulating material go to contact silicon substrate front-back.
Preferably, step 2, the power P=75mW of laser, laser irradiation time t=10s.
Preferably, step 3, silicon substrate surface form is presented pyramid.For example, observed under AFM (AFM),
Silicon substrate surface form is presented pyramid.
Preferably, step 4, silicon substrate surface maximum dimension D is 0.74 with the ratio of most short diameter W, maximum height H=
950nm。
Research method of the present invention based on laser controlling nanostructured silicon substrate surface form, compared with prior art, this hair
It is bright with following features：
First, changing nanostructured silicon substrate surface form by the thermal conductivity of contact material.
Second, be irradiated to nanostructured silicon substrate with laser, cleaning, environmental protection, any pollution is not produced.
Third, the time needed for changing nanostructured silicon substrate surface form is short, efficiency high.
Brief description of the drawings
Figure 1A -1C are the simple scale diagrams of silicon substrate surface form under different thermal conductivity material.
Fig. 2 is the relation schematic diagram of the thermal conductivity with silicon substrate surface form draw ratio of contact material.
Fig. 3 is the distribution schematic diagram that silicon substrate surrounding contacts different thermal conductivity material.
Fig. 4 is the pyramid silicon substrate surface form schematic diagram after changing.
Specific embodiment
To enable objects, features and advantages of the present invention more to become apparent, below in conjunction with accompanying drawing to of the invention
Specific embodiment elaborates.It should be noted that, accompanying drawing using very simplify in the form of and using non-precision ratio,
Only it is used to convenience, the purpose of the explicitly stated embodiment of the present invention.The preferred embodiment of the present invention is elaborated below：
When experiment starts, gone to contact the right plane of silicon substrate first with the material of different thermal conductivity, then irradiated with laser
Nanostructured silicon substrate 10 seconds, by the change for contrasting the contact material of different thermal conductivity to summarize silicon substrate surface form
Rule.Experimental program specifically related to is as follows：
Embodiment 1
The right plane of the structure silicon-based plate of contact nanometer, the thermal conductivity k of asbestos are gone with asbestos (heat-insulating material)1=0W/m-K.
Then the power of laser is transferred to P=75mW, the surface to silica-base material is irradiated 10 seconds.After laser irradiation is finished, by silicon substrate
It is placed under optical amplifier instrument and is observed.The result of observation is that the center of silicon substrate has one piece of silicon substrate surface form of projection,
Corresponding height H=900nm and maximum dimension D=5.15um is measured, corresponding draw ratio is 0.175, as shown in Figure 1A.
Embodiment 2
The right plane of the structure silicon-based plate of contact nanometer, the thermal conductivity k of silicon are gone with silicon (same material)2=150W/m-K.Weight
Multiple aforesaid operations, measure corresponding height H=900nm and maximum dimension D=6.00um, and corresponding draw ratio is 0.150, such as
Shown in Figure 1B.
Embodiment 3
The right plane of the structure silicon-based plate of contact nanometer, the thermal conductivity k of aluminium are gone with aluminium (Heat Conduction Material)3=200W/m-K.Weight
Multiple aforesaid operations, measure corresponding height H=900nm and maximum dimension D=6.85um, and corresponding draw ratio is 0.131, such as
Shown in Fig. 1 C.
As can be seen from the above-described embodiment, when the thermal conductivity of contact material is gradually increasing, (thermal conductivity of asbestos is minimum, silicon
Thermal conductivity it is medium, the thermal conductivity highest of aluminium), the maximum height of silicon substrate surface form will not occur any change, maximum dimension D
It is increasing.According to draw ratio for maximum height H/ maximum dimension Ds can be obtained, the draw ratio of silicon substrate surface form is increasingly
It is small.
Above is contact silicon substrate by aluminium, silicon, asbestos, so as to study the draw ratio of silicon substrate surface form.Pass through
More than experiment it can be found that the thermal conductivity of contact material is bigger, the maximum dimension D of silicon substrate surface form is bigger, corresponding long
Footpath is than smaller.
Experiment can also study the draw ratio of silicon substrate surface form with the material of more different thermal conductivities, not do herein in detail
Thin narration, the final contact material thermal conductivity drawn is as shown in Figure 2 with the graph of a relation of silicon substrate surface form draw ratio.
The change of silicon substrate surface form can be realized using above-mentioned experiment law.Specific experimental implementation is as follows：
This experiment or the silicon substrate gone under contact laser irradiation with the material of asbestos, silicon, three kinds of different thermal conductivities of aluminium
Material surrounding.The narration tested for convenience, it is necessary first to which silica-base material is abstracted into a cuboid, six faces are respectively labeled as
Above, below, the left side, the right side, above, below.The way of contact of material is as shown in figure 3, left and right two face asbestos, aluminium, stones
Cotton is equidistantly contacted, and front and rear two faces are equidistantly contacted with asbestos, aluminium, asbestos.Laboratory operating procedures are specific as follows：
Step one：By the way of contact of Fig. 3, gone to contact the surrounding of silicon substrate with the material of different thermal conductivity.
Step 2；The power of laser is transferred to P=75mW, silicon substrate is irradiated 10 seconds with laser.
Step 3；Laser is closed, the silica-base material after then laser is irradiated is carried out under being placed on AFM (AFM)
Observation, obtains silicon substrate surface form as shown in Figure 4.
Step 4；By AFM (AFM) measure change after silicon substrate surface form, its maximum dimension D with most
The ratio of short diameter W is 0.74, maximum height H=950nm.
Maximum dimension D is substantially equal to the thermal conductivity k of silicon with the ratio 0.74 of most short diameter W2With the thermal conductivity k of aluminium3Ratio
0.75, illustrate that the thermal conductivity of adjacent material affects the silicon substrate surface form of silicon substrate.
This experiment realizes silicon substrate surface morphologic change substantially, and the silicon substrate surface form after change is in size and pattern
It is generally proximate to pyramid.Silicon substrate surface form can be changed by the material of different thermal conductivity of arranging in pairs or groups, can not only make silicon substrate
Configuration of surface present pyramidal morphology, other shapes can also, the present invention be not set forth in detail herein.
Above example and referring to the drawings, is provided to the rough schematic view that the present invention is elaborated and done.This
The technical staff in field by carrying out to above-mentioned example modification or change on various forms, but without departing substantially from real situation of the invention
Under, both fall within protection scope of the present invention.
Claims (10)
1. the research method of laser controlling nanostructured silicon substrate surface form is based on, it is characterized in that as follows：
First, the silicon substrate of the material nanostructured of different thermal conductivity is used respectively；
2nd, the silicon substrate of laser irradiation of nano structure；
3rd, silicon substrate surface form is observed, and measures the raised draw ratio of silicon substrate surface.
4th, the Changing Pattern of silicon substrate surface form is summarized.
2. the research method of laser controlling nanostructured silicon substrate surface form is based on as claimed in claim 1, it is characterized in that：It is different
The material selection of thermal conductivity：Heat-insulating material, same material, Heat Conduction Material.
3. the research method of laser controlling nanostructured silicon substrate surface form is based on as claimed in claim 2, it is characterized in that：It is adiabatic
Material selection asbestos, same material select silicon, Heat Conduction Material aluminium.
4. the research method of laser controlling nanostructured silicon substrate surface form is based on, it is characterized in that as follows：
Step one, with the silicon substrate surrounding of the material nanostructured of different thermal conductivity；
Step 2, laser is irradiated to the silicon substrate of nanostructured；
Step 3, closes laser, the silicon substrate after observation laser irradiation；
Step 4, measures the configuration of surface of silicon substrate.
5. the research method of laser controlling nanostructured silicon substrate surface form is based on as claimed in claim 4, it is characterized in that：It is different
The material selection of thermal conductivity：Heat-insulating material, same material, Heat Conduction Material.
6. the research method of laser controlling nanostructured silicon substrate surface form is based on as claimed in claim 5, it is characterized in that：It is adiabatic
Material is asbestos, and same material is silicon, and Heat Conduction Material is aluminium.
7. the research method of laser controlling nanostructured silicon substrate surface form is based on as described in claim 5 or 6, it is characterized in that：
Step one, with heat-insulating material, Heat Conduction Material and heat-insulating material contact silicon substrate left and right face, with heat-insulating material, same material, absolutely
Hot material goes to contact silicon substrate front-back.
8. the research method of laser controlling nanostructured silicon substrate surface form is based on as claimed in claim 4, it is characterized in that：Step
Two, the power P=75mW of laser, laser irradiation time t=10s.
9. the research method of laser controlling nanostructured silicon substrate surface form is based on as claimed in claim 4, it is characterized in that：Step
Three, silicon substrate surface form is presented pyramid.
10. the research method of laser controlling nanostructured silicon substrate surface form is based on as described in claim 4 or 9, it is characterized in that：
Step 4, silicon substrate surface maximum dimension D is 0.74 with the ratio of most short diameter W, maximum height H=950nm.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108318485A (en) * | 2017-12-14 | 2018-07-24 | 杭州电子科技大学 | Based on laser irradiation different materials to the research method of surface micro-structure shaping influence |
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