CN106698510A - Doped ZrO2 and preparation method, and QLED device and preparation method - Google Patents
Doped ZrO2 and preparation method, and QLED device and preparation method Download PDFInfo
- Publication number
- CN106698510A CN106698510A CN201611182817.0A CN201611182817A CN106698510A CN 106698510 A CN106698510 A CN 106698510A CN 201611182817 A CN201611182817 A CN 201611182817A CN 106698510 A CN106698510 A CN 106698510A
- Authority
- CN
- China
- Prior art keywords
- zro
- layer
- preparation
- doping
- prepared
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
- C01G25/02—Oxides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/80—Particles consisting of a mixture of two or more inorganic phases
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The invention discloses doped ZrO2 and a preparation method, and a QLED device and a preparation method. The method comprises the following steps: adding a zinc source and/or a tin source into the aqueous solution of zircon salt, then adding a nitrogen source, and adding alkali solution, so as to ensure that the pH of a reaction system is equal to 7.5 to 9; then ensuring that the reaction system is reacted for 5 to 24h at 150 to 230 DEG C; finally performing centrifugal separation on the solution subjected to reaction, washing and drying, so as to obtain the doped ZrO2. According to the method, by mixing zinc source and/or the tin source into the solution of the zircon salt, tin and/or zinc element is doped into zirconium oxide, the energy level structure of zirconium oxide can be further adjusted, the conduction band energy level of the zirconium oxide is reduced, and the work function of zirconium oxide is enhanced, so that the potential barrier for the injection of a charge carrier is reduced; moreover, zirconium oxide can be matched with more quantum dot energy level through energy level adjustment; in addition, through the doping of nitrogen element, more donor centers are produced in zirconium oxide, and electronic transmission is further promoted.
Description
Technical field
The present invention relates to LED technology field, more particularly to a kind of doping ZrO2And preparation method, QLED devices
And preparation method.
Background technology
In current QLED and OLED, ZnO（Zinc oxide）、TiO2（Titanium oxide）And ZrO2（Zirconium oxide）As without electromechanics
Sub- implanted layer, and be widely used, and cause that the performance of device is improved.ZrO2And TiO2It is oxide of the same clan, but
It is that its application in QLED and in OLED is rarely reported.And there is document report to use ZrO recently2Prepared as electron injecting layer
Into QLED, but ZrO among these2Preparation method be not given, but other companies purchase.Can by current situation
To find ZrO2Preparation be still need solve problem.And ZrO is pointed out in the document2Energy level and InP quantum dots energy level
Comparison match, but different its energy level of quantum dot is different, therefore the zirconium oxide method prepared in the document, it is unsuitable
It is applied in the LED component of other quantum dots.
Therefore, prior art has yet to be improved and developed.
The content of the invention
In view of above-mentioned the deficiencies in the prior art, it is an object of the invention to provide one kind doping ZrO2And preparation method,
QLED devices and preparation method, it is intended to solve ZrO2The unsuitable QD in addition to InP of energy level, existing method is not suitable for application
To the problem in the LED component of the quantum dot in addition to InP.
Technical scheme is as follows：
One kind doping ZrO2Preparation method, wherein, including step：
In the aqueous solution of zirconates, zinc source and/or Xi Yuan are added, then add nitrogen source, and add aqueous slkali, make reaction system
pH=7.5-9；Then reaction system is reacted into 5-24h at 150-230 DEG C；Finally reacted solution is centrifuged,
And after washing, it is dried to obtain doping ZrO2。
Described doping ZrO2Preparation method, wherein, the zirconates be zirconium chloride, zinc source be zinc chloride, Xi Yuan is chlorine
Change tin.
Described doping ZrO2Preparation method, wherein, the nitrogen source be ammonium chloride.
Described doping ZrO2Preparation method, wherein, the aqueous slkali be tetramethyl ammonium hydroxide solution, ammoniacal liquor, hydrogen
One kind in sodium hydroxide solution, potassium hydroxide solution.
Described doping ZrO2Preparation method, wherein, based on elemental mole ratios, the N:（Zn and/or Sn）:Zr=x:
(0.2-x):0.8, wherein 0.01<x<0.05.
One kind doping ZrO2, wherein, using as above any described doping ZrO2Preparation method be prepared from, it is described to mix
Miscellaneous ZrO2It is the ZrO of nitrogen zinc, nitrogen tin or nitrogen zinc-tin doping2。
A kind of preparation method of QLED devices, wherein, including：
Step A, hole injection layer and hole transmission layer are sequentially prepared on the substrate containing hearth electrode；
Step B, quantum dot light emitting layer is prepared on hole transmission layer；
Step C, ZrO is prepared on quantum dot light emitting layer2Layer；Wherein described step C is specially：To as described above be adulterated ZrO2
It is dissolved in solvent, obtains ZrO2Solution；Then the ZrO described in spin coating on quantum dot light emitting layer2Solution, is made ZrO2Layer；
Step D, in ZrO2Top electrode is prepared on layer, is then packaged, obtain QLED devices.
A kind of QLED devices, wherein, the QLED devices are using the preparation method preparation of QLED devices as described above
Into；
The QLED devices include substrate, hearth electrode, hole injection layer, hole transmission layer, quantum dot light emitting successively from bottom to top
Layer, ZrO2Layer and top electrode.
A kind of preparation method of QLED devices, wherein, including：
Step R, ZrO is prepared on the substrate containing hearth electrode2Layer；Wherein described step R is specially：To adulterate as described above
ZrO2It is dissolved in solvent, obtains ZrO2Solution；Then the ZrO described in spin coating on the substrate containing hearth electrode2Solution, is made ZrO2
Layer；
Step S, in ZrO2Quantum dot light emitting layer is prepared on layer, hole transmission layer is then prepared on quantum dot light emitting layer；
Step T, top electrode is prepared on hole transmission layer, be then packaged, obtain QLED devices.
A kind of QLED devices, wherein, the QLED devices are using the preparation method preparation of QLED devices as described above
Into；The QLED devices include substrate, hearth electrode, ZrO successively from bottom to top2Layer, quantum dot light emitting layer, hole transmission layer and top
Electrode.
Beneficial effect：The present invention by the aqueous solution of zirconates add zinc source and/or Xi Yuan, then again by adding nitrogen
Source, can prepare the zirconium oxide or the zirconium oxide for nitrogen tin zinc doping of nitrogen zinc or nitrogen tin dope after reaction.By mixing
Zinc or tin can adjust the energy level of zirconium oxide, make it have wider applicability；Can be provided more by mixing nitrogen
Many donor levels improve the electron mobility of zirconium oxide.
Brief description of the drawings
Fig. 1 is a kind of structural representation of light emitting diode with quantum dots preferred embodiment of the invention.
Fig. 2 is a kind of structural representation of another preferred embodiment of light emitting diode with quantum dots of the invention.
Specific embodiment
The present invention provides a kind of doping ZrO2And preparation method, QLED devices and preparation method, for make the purpose of the present invention,
Technical scheme and effect are clearer, clear and definite, and the present invention is described in more detail below.It should be appreciated that described herein
Specific embodiment is only used to explain the present invention, is not intended to limit the present invention.
A kind of doping ZrO of the invention2Preparation method preferred embodiment, it includes step：
In the aqueous solution of zirconates, zinc source and/or Xi Yuan are added, then add nitrogen source, and add aqueous slkali, make reaction system
pH=7.5-9；Then reaction system is reacted into 5-24h at 150-230 DEG C；Finally reacted solution is centrifuged,
And after washing, it is dried to obtain doping ZrO2。
Above-mentioned steps are specifically, first by 0.5-2mmol zirconates（Such as zirconium chloride）It is added in the 3-10ml aqueous solution, obtains
The aqueous solution of zirconates；Then in the aqueous solution of zirconates, zinc source is added（Such as zinc chloride）, Xi Yuan（Such as stannic chloride）In one kind or
Two kinds, then add nitrogen source（Such as ammonium chloride）, and aqueous slkali is added, make reaction system into alkalescent, control reaction system pH=
7.5-9, the aqueous slkali can be but to be not limited to tetramethyl ammonium hydroxide solution, ammoniacal liquor, sodium hydroxide solution, potassium hydroxide molten
One kind in liquid, preferred aqueous slkali is tetramethyl ammonium hydroxide solution or ammoniacal liquor；Then reaction system is carried out into ultrasound, then
It is positioned in the reactor of polytetrafluoroethyllining lining, the heating response 5-24h at 150-230 DEG C；Finally by reacted solution
It is centrifuged, and after making to be washed with deionized, is dried to obtain doping ZrO2.It is described that solwution method of the present invention is prepared
Doping ZrO2Can be dissolved in ethanol or aqueous isopropanol.
Preferably, based on elemental mole ratios, the N:（Zn and/or Sn）:Zr=x:(0.2-x):0.8, wherein 0.01<x<
0.05.For example, when x is 0.03, N:（Zn and/or Sn）:Zr=0.03:0.17:0.8.
The present invention by adding zinc source and/or Xi Yuan in the aqueous solution of zirconates, then again by adding nitrogen source, reaction with
The zirconium oxide or the zirconium oxide for nitrogen tin zinc doping of nitrogen zinc or nitrogen tin dope can be prepared afterwards.Mixed by by Xi Yuan and zinc source
In closing the aqueous solution of zirconates so that mix tin or Zn-ef ficiency in zirconium oxide, and then the level structure of zirconium oxide can be adjusted,
The conduction level of zirconium oxide is reduced, its work function is lifted, so as to reduce the potential barrier of carrier injection；And can be by adjusting
Energy-conservation level allows zirconium oxide and more quantum dot level-density parameters；In addition, by being doped into nitrogen, and then cause oxidation
More donor centers are produced in zirconium, and then promotes the transmission of electronics.Simultaneously because zinc or tin element are mixed, in zirconium oxide
Middle formation containing zinc oxide or tin oxide, and then also increase the electron mobility of zirconium oxide；Additionally, all originals of the invention
Material is inorganic matter, reduces manufacturing cost, does not contain organic matter or organometallic precursor, while reduces cost,
Also it is more green.
Doping ZrO2Preparation method specific embodiment it is as follows：
Embodiment 1
1mmol zirconium chlorides are added in the 5ml aqueous solution, the zinc chloride of 0.15mmol is added, then add 0.05mmol's
Ammonium chloride, then by adding TMAH (TMAH), makes solution for alkalescent pH=8, then by after ultrasound, plus
In the stainless steel cauldron of the polytetrafluoroethyllining lining for entering 25ml, the then heating response 24h at 220 DEG C.After question response terminates,
Solution is centrifuged using the rotating speed of 10000rpm, after making to be washed with deionized, ethanol or isopropanol is distributed to
In solution.
Embodiment 2
1mmol zirconium chlorides are added in the 5ml aqueous solution, the zinc chloride of 0.1mmol is added, the chlorine of 0.1mmol is then added
Change ammonium, then by adding ammoniacal liquor, make solution for alkalescent pH=8, then by after ultrasound, adding the polytetrafluoroethylene (PTFE) of 25ml
In the stainless steel cauldron of liner, the then heating response 24h at 220 DEG C.After question response terminates, solution is used into 10000rpm
Rotating speed be centrifuged, after making to be washed with deionized, be distributed in ethanol or aqueous isopropanol.
Embodiment 3
1mmol zirconium chlorides are added in the 5ml aqueous solution, the zinc chloride and 0.8mmol stannic chlorides of 0.8mmol, Ran Houzai is added
The ammonium chloride of 0.02mmol is added, then by adding sodium hydroxide solution, makes solution for alkalescent pH=8, then by ultrasound
Afterwards, in adding the stainless steel cauldron of polytetrafluoroethyllining lining of 25ml, the then heating response 24h at 220 DEG C.Question response knot
Shu Hou, solution is centrifuged using the rotating speed of 10000rpm, after making to be washed with deionized, is distributed to ethanol or different
In propanol solution.
The present invention provides a kind of doping ZrO2, wherein, using as above any described doping ZrO2Preparation method prepare and
Into the doping ZrO2It is the ZrO of nitrogen zinc, nitrogen tin or nitrogen zinc-tin doping2.The ZrO of nitrogen zinc of the present invention, nitrogen tin or nitrogen zinc-tin doping2
With wider applicability, and with electron mobility higher.
A kind of preparation method preferred embodiment of QLED devices of the invention, it includes：
Step A, hole injection layer and hole transmission layer are sequentially prepared on the substrate containing hearth electrode；
Substrate containing hearth electrode of the present invention can be ITO substrates, and the hole injection layer can be PEDOT：PSS、
MoO3、WoO3、NiO、CuO、V2O5, one or more in CuS etc., the hole transmission layer can be TFB, PVK, Poly-
One or more in TPD, TCTA, CBP.
Step B, quantum dot light emitting layer is prepared on hole transmission layer；
The material of quantum dot light emitting layer of the present invention can be common red light quantum point, green light quantum point, blue light quantum point
With at least one in gold-tinted quantum dot and infrared light quantum dot and ultraviolet light quantum dot.
Step C, ZrO is prepared on quantum dot light emitting layer2Layer；Wherein described step C is specially：To adulterate as described above
ZrO2It is dissolved in solvent, obtains ZrO2Solution；Then the ZrO described in spin coating on quantum dot light emitting layer2Solution, is made ZrO2Layer；It is excellent
Selection of land, the ZrO2The thickness of layer is 20 ~ 30nm, and such as thickness is 25nm.
Step D, in ZrO2Top electrode is prepared on layer, is then packaged, obtain QLED devices.
The present invention can also use simple encapsulation manually using conventional machine encapsulation.Wherein, the top electrode
Used as anode, its material can be the one kind in Ag, Al, Cu, Au, alloy electrode.
A kind of QLED devices preferred embodiment of the invention, wherein, the QLED devices use QLED devices as described above
The preparation method of part is prepared from.With reference to shown in Fig. 1, the QLED devices include substrate 1, hearth electrode 2, sky successively from bottom to top
Cave implanted layer 3, hole transmission layer 4, quantum dot light emitting layer 5, ZrO2Layer 6 and top electrode 7.By the above method, this hair being made
Bright QLED device light emitting efficiencies are high and electricity transmission performance is excellent.
It should be noted that, ZrO of the present invention2Layer is not limited to use in preparation autologous QLED devices as described above, also
Can be used to prepare the QLED devices of reciprocal form structure.
A kind of another preferred embodiment of preparation method of QLED devices of the invention, it includes：
Step R, ZrO is prepared on the substrate containing hearth electrode2Layer；Wherein described step R is specially：To adulterate as described above
ZrO2It is dissolved in solvent, obtains ZrO2Solution；Then the ZrO described in spin coating on the substrate containing hearth electrode2Solution, is made ZrO2
Layer；
Step S, in ZrO2Quantum dot light emitting layer is prepared on layer, hole transmission layer is then prepared on quantum dot light emitting layer；
Step T, top electrode is prepared on hole transmission layer, be then packaged, obtain QLED devices.
A kind of another preferred embodiment of QLED devices of the invention, as shown in Fig. 2 including substrate 8, bottom successively from bottom to top
Electrode 9, ZrO2Layer 10, quantum dot light emitting layer 11, hole transmission layer 12 and top electrode 13.
In sum, a kind of doping ZrO that the present invention is provided2And preparation method, QLED devices and preparation method.The present invention
It is mixed into the solution of zirconates by by zinc source and/or Xi Yuan so that tin and/or Zn-ef ficiency are mixed in zirconium oxide, and then can be with
The level structure of zirconium oxide is adjusted, the conduction level of zirconium oxide is reduced, its work function is lifted, so as to reduce carrier injection
Potential barrier；And can be by adjusting energy level so that zirconium oxide can be with more quantum dot level-density parameters；Additionally by doping
Nitrogen, and then cause to produce more donor centers in zirconium oxide, and then promote the transmission of electronics.Simultaneously because mixing zinc
Or tin element, formed in zirconium oxide containing zinc oxide or tin oxide, and then also increase the electron transfer of zirconium oxide
Rate；Additionally, all raw materials of the invention are inorganic matter, manufacturing cost is reduced, do not contain organic matter or organic metal forerunner
Body, it is also more green while reduces cost.
It should be appreciated that application of the invention is not limited to above-mentioned citing, and for those of ordinary skills, can
To be improved according to the above description or converted, all these modifications and variations should all belong to the guarantor of appended claims of the present invention
Shield scope.
Claims (10)
1. a kind of doping ZrO2Preparation method, it is characterised in that including step：
In the aqueous solution of zirconates, zinc source and/or Xi Yuan are added, then add nitrogen source, and add aqueous slkali, make reaction system
pH=7.5-9；Then reaction system is reacted into 5-24h at 150-230 DEG C；Finally reacted solution is centrifuged,
And after washing, it is dried to obtain doping ZrO2。
2. doping ZrO according to claim 12Preparation method, it is characterised in that the zirconates be zirconium chloride, zinc source is
Zinc chloride, Xi Yuan is stannic chloride.
3. doping ZrO according to claim 12Preparation method, it is characterised in that the nitrogen source be ammonium chloride.
4. doping ZrO according to claim 12Preparation method, it is characterised in that the aqueous slkali be tetramethyl hydrogen-oxygen
Change the one kind in ammonium salt solution, ammoniacal liquor, sodium hydroxide solution, potassium hydroxide solution.
5. doping ZrO according to claim 12Preparation method, it is characterised in that based on elemental mole ratios, the N:
（Zn and/or Sn）:Zr=x:(0.2-x):0.8, wherein 0.01<x<0.05.
6. a kind of doping ZrO2, it is characterised in that using the doping ZrO as described in claim 1 ~ 5 is any2Preparation method system
It is standby to form, the doping ZrO2It is the ZrO of nitrogen zinc, nitrogen tin or nitrogen zinc-tin doping2。
7. a kind of preparation method of QLED devices, it is characterised in that including：
Step A, hole injection layer and hole transmission layer are sequentially prepared on the substrate containing hearth electrode；
Step B, quantum dot light emitting layer is prepared on hole transmission layer；
Step C, ZrO is prepared on quantum dot light emitting layer2Layer；Wherein described step C is specially：To mix as claimed in claim 6
Miscellaneous ZrO2It is dissolved in solvent, obtains ZrO2Solution；Then the ZrO described in spin coating on quantum dot light emitting layer2Solution, is made ZrO2Layer；
Step D, in ZrO2Top electrode is prepared on layer, is then packaged, obtain QLED devices.
8. a kind of QLED devices, it is characterised in that the QLED devices using QLED devices as claimed in claim 7 preparation
Method is prepared from；
The QLED devices include substrate, hearth electrode, hole injection layer, hole transmission layer, quantum dot light emitting successively from bottom to top
Layer, ZrO2Layer and top electrode.
9. a kind of preparation method of QLED devices, it is characterised in that including：
Step R, ZrO is prepared on the substrate containing hearth electrode2Layer；Wherein described step R is specially：Will be as claimed in claim 6
Doping ZrO2It is dissolved in solvent, obtains ZrO2Solution；Then the ZrO described in spin coating on the substrate containing hearth electrode2Solution, system
Into ZrO2Layer；
Step S, in ZrO2Quantum dot light emitting layer is prepared on layer, hole transmission layer is then prepared on quantum dot light emitting layer；
Step T, top electrode is prepared on hole transmission layer, be then packaged, obtain QLED devices.
10. a kind of QLED devices, it is characterised in that the QLED devices using QLED devices as claimed in claim 9 system
Preparation Method is prepared from；The QLED devices include substrate, hearth electrode, ZrO successively from bottom to top2Layer, quantum dot light emitting layer, sky
Cave transport layer and top electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611182817.0A CN106698510B (en) | 2016-12-20 | 2016-12-20 | Adulterate ZrO2And preparation method, QLED device and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611182817.0A CN106698510B (en) | 2016-12-20 | 2016-12-20 | Adulterate ZrO2And preparation method, QLED device and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106698510A true CN106698510A (en) | 2017-05-24 |
| CN106698510B CN106698510B (en) | 2019-11-12 |
Family
ID=58938102
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611182817.0A Active CN106698510B (en) | 2016-12-20 | 2016-12-20 | Adulterate ZrO2And preparation method, QLED device and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106698510B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103373743A (en) * | 2013-07-12 | 2013-10-30 | 南京宇热材料科技有限公司 | Polyol assisted hydrothermal method for synthesis of zirconium oxide nano-powder |
| CN103588246A (en) * | 2012-08-13 | 2014-02-19 | 南宁市鼎发粉末冶金有限责任公司 | Preparation process for nano zirconia powder |
| CN103708547A (en) * | 2013-12-05 | 2014-04-09 | 清华大学 | Method for preparing tetragonal phase ZrO2 nano-powder stable at room temperature by utilization of doping of crystal form inductive agent |
| CN105374953A (en) * | 2015-12-24 | 2016-03-02 | Tcl集团股份有限公司 | QLED and preparation method thereof as well as luminous module and display device |
-
2016
- 2016-12-20 CN CN201611182817.0A patent/CN106698510B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103588246A (en) * | 2012-08-13 | 2014-02-19 | 南宁市鼎发粉末冶金有限责任公司 | Preparation process for nano zirconia powder |
| CN103373743A (en) * | 2013-07-12 | 2013-10-30 | 南京宇热材料科技有限公司 | Polyol assisted hydrothermal method for synthesis of zirconium oxide nano-powder |
| CN103708547A (en) * | 2013-12-05 | 2014-04-09 | 清华大学 | Method for preparing tetragonal phase ZrO2 nano-powder stable at room temperature by utilization of doping of crystal form inductive agent |
| CN105374953A (en) * | 2015-12-24 | 2016-03-02 | Tcl集团股份有限公司 | QLED and preparation method thereof as well as luminous module and display device |
Non-Patent Citations (1)
| Title |
|---|
| 代文双等: "水热法制备氧化锆超细粉体工艺研究", 《辽宁科技学院学报》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106698510B (en) | 2019-11-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN105206715B (en) | A kind of QLED and preparation method thereof of exciton confinement structure | |
| CN106384767B (en) | Light emitting diode with quantum dots and preparation method thereof and illuminating module, display device | |
| CN105591030B (en) | A kind of translucent perovskite solar cell and preparation method thereof | |
| CN107112424B (en) | Use the light-emitting component and its manufacturing method of the charge generating layers formed by solution process | |
| CN109728179A (en) | Light emitting diode with quantum dots device and preparation method thereof | |
| CN102185111B (en) | Transition metal oxide inverted organic LED (light emitting diode) | |
| CN106450009A (en) | Dual-layer perovskite light emitting diode and preparation method therefor | |
| US11502268B2 (en) | Electron transport layer including stacked electron transport film, and method of manufacturing the same, light-emitting device and display apparatus | |
| CN209515741U (en) | It is a kind of using Al2O3 film as the light emitting diode with quantum dots of buffer layer | |
| CN104124295A (en) | Planar heterogeneous perovskite solar cell and preparation method thereof | |
| CN109980097A (en) | A kind of preparation method of film and QLED device | |
| CN105140411B (en) | QLED and preparation method thereof without ITO | |
| CN108767125B (en) | A kind of QD-3D-QD luminescent layer perovskite light emitting diode and preparation method thereof | |
| CN110518122A (en) | Using two-dimensional material as the perovskite solar battery and preparation method of electron transfer layer | |
| CN110112302A (en) | One kind is with Al2O3Film is the light emitting diode with quantum dots and preparation method thereof of buffer layer | |
| CN106410051A (en) | Application of metal element-doped ZnO nano material in light-emitting diode | |
| CN110148676A (en) | A kind of inkjet printing is organic, perovskite hydridization full color display and preparation method thereof | |
| CN105845834B (en) | It is inverted green light quantum point membrane electro luminescent device | |
| CN107394046A (en) | A kind of low temperature silicon and perovskite lamination solar cell and preparation method thereof | |
| CN106531895A (en) | Quantum dot light emitting diode and preparation method therefor, light emitting module and display apparatus | |
| CN108899433A (en) | Hole transmission layer, preparation method and semiconductor photoelectric device | |
| US20180033976A1 (en) | Light emitting diode and method of fabricating the same | |
| CN107204401A (en) | A kind of QLED devices and preparation method thereof | |
| CN107154462A (en) | A kind of preparation method of OLED and OLED | |
| CN106698510A (en) | Doped ZrO2 and preparation method, and QLED device and preparation method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |