CN106698435A - Silicon carbide particle and preparation method thereof - Google Patents
Silicon carbide particle and preparation method thereof Download PDFInfo
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- CN106698435A CN106698435A CN201611174078.0A CN201611174078A CN106698435A CN 106698435 A CN106698435 A CN 106698435A CN 201611174078 A CN201611174078 A CN 201611174078A CN 106698435 A CN106698435 A CN 106698435A
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- preparation
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- carbide particle
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/61—Micrometer sized, i.e. from 1-100 micrometer
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
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Abstract
The invention relates to a preparation method of a silicon carbide particle. The preparation method comprises the following steps: firstly, selecting silicon carbide powder; secondly, carrying out ultrasonic cleaning for 5 minutes with absolute ethyl alcohol; thirdly, carrying out ultrasonic cleaning with NaOH solution and filtering; fourthly, carrying out hydrochloric acid cleaning and filtering; fifthly, cleaning with distilled water; and sixthly, drying. The invention also relates to the silicon carbide particle prepared by adopting the preparation method provided by the invention, oil pollution and dust on the surface of the particle are cleaned up, cleanliness, no oil pollution and no dust are realized, and a necessary condition is provided for further application of the silicon carbide particle.
Description
Technical field
The present invention relates to a kind of preparation method of silicon-carbide particle, particularly a kind of system of composite silicon-carbide particle
Preparation Method, the invention further relates to using the silicon-carbide particle prepared by the method.
Background technology
The features such as carborundum (SiC) has stable chemical performance, thermal conductivity factor is high, thermal coefficient of expansion is small, anti-wear performance is good,
It is widely used as abrasive material.In recent years, its purposes expands day by day, for example, silicon carbide powder is coated hydraulic turbine leaf with special process
The inwall of wheel or cylinder block, can improve its wearability and increase the service life 1~2 times；The senior fire proofed wood being made of carborundum
Material, it is high with resistance to thermal shock, small volume, lightweight, intensity, the advantages of good energy-conserving effect；Low grade carborundum (containing SiC about 85%)
It is fabulous deoxidier, can be accelerated to make steel speed with it, and be easy to control chemical composition, improves the quality of steel.
Traditionally, carborundum is that quartz sand, petroleum coke (or coal tar), wood chip (are needed plus food during production green silicon carbide
Salt) etc. raw material formed by resistance furnace pyrolytic semlting, gained carborundum proportion be 3.20~3.25, microhardness be 2840~
3320kg/mm2.But due to there is substantial amounts of greasy dirt and ash by silicon-carbide particle surface obtained in high-volume industrial production
Dirt, it is therefore desirable to could preferably be found application after further treatment.
The content of the invention
Regarding to the issue above, it is an object of the invention to provide a kind of preparation method of silicon-carbide particle and using the method institute
The silicon-carbide particle of preparation.
To reach above-mentioned purpose, the present invention is adopted the following technical scheme that：
An a kind of specific embodiment of the invention, there is provided preparation method of silicon-carbide particle, it include with
Lower step：
Step one：Choose silicon carbide powder；
Step 2：Absolute ethyl alcohol is cleaned by ultrasonic；
Step 3：NaOH solution is cleaned by ultrasonic and filters；
Step 4：Hydrochloric acid is cleaned and filtered；
Step 5：Distilled water is cleaned；
Step 6：Drying.
The preparation method of silicon-carbide particle according to an embodiment of the invention, wherein, used in the step one
The average grain diameter of silicon carbide powder is R=5 μm.
The preparation method of silicon-carbide particle according to an embodiment of the invention, wherein, the NaOH solution concentration is 2
~10 mass %.
The preparation method of silicon-carbide particle according to an embodiment of the invention, wherein, the NaOH solution concentration is 5
Quality %.
The preparation method of silicon-carbide particle according to an embodiment of the invention, wherein, the concentration of the hydrochloric acid for 6~
12%vol.
The preparation method of silicon-carbide particle according to an embodiment of the invention, wherein, the concentration of the hydrochloric acid is
10%vol.
The preparation method of silicon-carbide particle according to an embodiment of the invention, wherein, the drying is at 60~100 DEG C
At a temperature of carry out.
The preparation method of silicon-carbide particle according to an embodiment of the invention, wherein, temperature of the drying at 80 DEG C
Carried out under degree.
The preparation method of silicon-carbide particle according to an embodiment of the invention, wherein, absolute ethyl alcohol be cleaned by ultrasonic and
The NaOH solution ultrasonic cleaning time is 5min.
An a kind of specific embodiment of the invention, there is provided silicon-carbide particle, the silicon-carbide particle is by such as
The preparation method of upper described any one is prepared from.
By the silicon-carbide particle prepared by silicon-carbide particle preparation method of the present invention, greasy dirt and the dust cleaning on surface are dry
Only, determine that it realizes cleaning without greasy dirt and dust by energy spectrum analysis, for further use provides necessary requirement.
Brief description of the drawings
Fig. 1 and Fig. 2 are the SEM micrographs of the silicon-carbide particle prepared by the present invention；
Fig. 3 is the EDS collection of illustrative plates of the silicon-carbide particle prepared by the present invention；
Fig. 4 is the XRD spectrum of the silicon-carbide particle prepared by the present invention.
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, below in conjunction with the accompanying drawings and embodiment, it is right
The present invention is further elaborated.It should be appreciated that specific embodiment described herein is only used to explain the present invention, not
For limiting the present invention.
The preparation method of silicon-carbide particle of the invention is comprised the following steps：Step one：Choose silicon carbide powder；Step
Two：Absolute ethyl alcohol is cleaned by ultrasonic；Step 3：NaOH solution is cleaned by ultrasonic and filters；Step 4：Hydrochloric acid is cleaned and filtered；Step
Five：Distilled water is cleaned；Step 6：Drying.
In a further embodiment of the invention, the average grain diameter of the silicon carbide powder used in step one is R
=5 μm.
In a further embodiment of the invention, the NaOH solution concentration is 2~10 mass %.
In a further embodiment of the invention, the NaOH solution concentration is 5 mass %.
In a further embodiment of the invention, the concentration of the hydrochloric acid is 6~12%vol.
In a further embodiment of the invention, the concentration of the hydrochloric acid is 10%vol.
In a further embodiment of the invention, the drying is carried out at a temperature of 60~100 DEG C.
In a further embodiment of the invention, the drying is carried out at a temperature of 80 DEG C.
In a further embodiment of the invention, absolute ethyl alcohol is cleaned by ultrasonic and NaOH solution is cleaned by ultrasonic the time
It is 5min.
Silicon-carbide particle as obtained by preparation method of the invention, its SEM photograph as illustrated in fig. 1 and 2, put down by particle size
At 5 μm or so, size uniform, it is cleaned after, surface is very clean.With Pt as metal spraying element gained EDS power spectrums result such as
Shown in Fig. 3, particle elements are Si and C, more pure, without other doped chemicals.Its XRD diffracting spectrum is as shown in figure 4, composition is
SiC, is practically free of other impurities.
By the silicon-carbide particle prepared by silicon-carbide particle preparation method of the present invention, greasy dirt and the dust cleaning on surface are dry
Only, cleaning is realized without greasy dirt and dust, is used for it is further and is provided necessary requirement.
Presently preferred embodiments of the present invention is the foregoing is only, not for limiting practical range of the invention；If do not taken off
From the spirit and scope of the present invention, the present invention is modified or equivalent, all should covered in the claims in the present invention
In the middle of protection domain.
Claims (10)
1. a kind of preparation method of silicon-carbide particle, it is characterised in that comprise the following steps：
Step one：Choose silicon carbide powder；
Step 2：Absolute ethyl alcohol is cleaned by ultrasonic；
Step 3：NaOH solution is cleaned by ultrasonic and filters；
Step 4：Hydrochloric acid is cleaned and filtered；
Step 5：Distilled water is cleaned；
Step 6：Drying.
2. the preparation method of silicon-carbide particle according to claim 1, it is characterised in that the carbon used in the step one
The average grain diameter of SiClx powder is R=5 μm.
3. the preparation method of silicon-carbide particle according to claim 1, it is characterised in that the NaOH solution concentration is 2
~10 mass %.
4. the preparation method of silicon-carbide particle according to claim 3, it is characterised in that the NaOH solution concentration is 5
Quality %.
5. the preparation method of silicon-carbide particle according to claim 1, it is characterised in that the concentration of the hydrochloric acid is 6~
12%vol.
6. the preparation method of silicon-carbide particle according to claim 5, it is characterised in that the concentration of the hydrochloric acid is 10%
vol。
7. the preparation method of silicon-carbide particle according to claim 1, it is characterised in that the drying is at 60~100 DEG C
At a temperature of carry out.
8. the preparation method of silicon-carbide particle according to claim 7, it is characterised in that temperature of the drying at 80 DEG C
Under carry out.
9. the preparation method of silicon-carbide particle according to claim 1, it is characterised in that absolute ethyl alcohol be cleaned by ultrasonic and
The NaOH solution ultrasonic cleaning time is 5min.
10. a kind of silicon-carbide particle, it is characterised in that prepared by the preparation method described in any one of claim 1~9 and
Into.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611174078.0A CN106698435A (en) | 2016-12-16 | 2016-12-16 | Silicon carbide particle and preparation method thereof |
| PCT/CN2017/102610 WO2018107842A1 (en) | 2016-12-16 | 2017-09-21 | Silicon carbide particles and preparation method therefor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611174078.0A CN106698435A (en) | 2016-12-16 | 2016-12-16 | Silicon carbide particle and preparation method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN106698435A true CN106698435A (en) | 2017-05-24 |
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| CN201611174078.0A Pending CN106698435A (en) | 2016-12-16 | 2016-12-16 | Silicon carbide particle and preparation method thereof |
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| CN (1) | CN106698435A (en) |
| WO (1) | WO2018107842A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018107842A1 (en) * | 2016-12-16 | 2018-06-21 | 苏州金仓合金新材料有限公司 | Silicon carbide particles and preparation method therefor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103964439A (en) * | 2014-04-25 | 2014-08-06 | 北方工业大学 | Surface purification treatment method for abrasive grade SiC particles |
| CN104561942A (en) * | 2014-12-24 | 2015-04-29 | 北方民族大学 | Palladium-free activation method of silicon carbide powder |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5035796B2 (en) * | 2007-07-09 | 2012-09-26 | 東海カーボン株式会社 | Cleaning method of plasma etching electrode plate |
| CN102285653B (en) * | 2011-06-02 | 2013-04-10 | 江苏大阳光辅股份有限公司 | Method for removing carbon impurities in silicon carbide micropowder |
| CN103553625B (en) * | 2013-11-16 | 2015-04-22 | 连云港龙塔研磨材料有限公司 | Method for preparing silicon carbide micro powder for fine silicon carbide ceramics |
| CN105195737B (en) * | 2015-10-14 | 2017-07-18 | 东南大学 | A kind of method of SiC particulate surface cladded with nickel |
| CN106698435A (en) * | 2016-12-16 | 2017-05-24 | 苏州金仓合金新材料有限公司 | Silicon carbide particle and preparation method thereof |
-
2016
- 2016-12-16 CN CN201611174078.0A patent/CN106698435A/en active Pending
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2017
- 2017-09-21 WO PCT/CN2017/102610 patent/WO2018107842A1/en active Application Filing
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103964439A (en) * | 2014-04-25 | 2014-08-06 | 北方工业大学 | Surface purification treatment method for abrasive grade SiC particles |
| CN104561942A (en) * | 2014-12-24 | 2015-04-29 | 北方民族大学 | Palladium-free activation method of silicon carbide powder |
Non-Patent Citations (1)
| Title |
|---|
| 邹忠利 等: "碳化硅粉体化学镀镍前无钯活化工艺", 《电镀与涂饰》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018107842A1 (en) * | 2016-12-16 | 2018-06-21 | 苏州金仓合金新材料有限公司 | Silicon carbide particles and preparation method therefor |
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| Publication number | Publication date |
|---|---|
| WO2018107842A1 (en) | 2018-06-21 |
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Application publication date: 20170524 |