CN106685384A - Integrated semi-conductor power switch device - Google Patents
Integrated semi-conductor power switch device Download PDFInfo
- Publication number
- CN106685384A CN106685384A CN201710030598.2A CN201710030598A CN106685384A CN 106685384 A CN106685384 A CN 106685384A CN 201710030598 A CN201710030598 A CN 201710030598A CN 106685384 A CN106685384 A CN 106685384A
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- Prior art keywords
- power switch
- semiconductor power
- circuit
- voltage
- audion
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08108—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in thyristor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08112—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in bipolar transistor switches
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Abstract
The invention relates to the technical field of microelectronics, in particular to an integrated semi-conductor power switch device. The integrated semi-conductor power switch device comprises a semi-conductor power switch, a voltage clamping and sampling circuit for detecting whether currents passing through the semi-conductor power switch are overcurrents or not and an on-off driving circuit for enabling the semi-conductor power switch to be switched off when the voltage clamping and sampling circuit detects that the currents passing through the semi-conductor power switch are the overcurrents. According to the integrated semi-conductor power switch device, an integrated device structure is adopted, the overcurrent-protected singal sampling-transmitting-processing-executing route is shortened, the response time delay of overcurrent protection is shortened, overcurrent protection on all the semi-conductor power switches is realized, the device is suitable for any topological structure, encapsulating pin inductance and PCB wiring inductance are eliminated, parasitic inductance is obviously reduced, a leading-edge blanking circuit is omitted, and the overcurrent protection reliability is improved.
Description
Technical field
The present invention relates to microelectronics technology, in particular to a kind of integrated form semiconductor power switch device.
Background technology
The switching tube that semiconductor power device is constituted is the core of modern power changer, and semiconductor power device is stablized
Property and reliability have vital impact on the reliability of whole power converter system, therefore improve the steady of semiconductor device
Qualitative and reliability is significant.
Overcurrent damage is a kind of common failure mode of semiconductor power switch, generally occurs in short circuit, transships or which
Under its some abnormal conditions.For example, in BOOST converter, load down causes inductance saturation, inductive current to sharply increase, meeting
Cause semiconductor power switch overcurrent damage.During the overcurrent damage of semiconductor power switch usually can cause power converter system
The damage of other devices, or even the expendable failure of whole system.For example, in bridge converter, the quasiconductor of same bridge arm
Device for power switching is due to straight-through caused bridge converter overcurrent damage.
The content of the invention
In view of this, it is an object of the invention to provide a kind of integrated form semiconductor power switch device, above-mentioned to solve
Problem.
For achieving the above object, the present invention provides following technical scheme：
A kind of integrated form semiconductor power switch device includes：Semiconductor power switch, detection are by the quasiconductor work(
The voltage clamping of excessively stream and sample circuit and being detected with sample circuit in the voltage clamping is passed through the electric current of rate switch
The driving breaking circuit for disconnecting the semiconductor power switch during overcurrent of the semiconductor power switch, wherein：
The semiconductor power switch includes high order end, low order end and control end, the voltage clamping and sample circuit bag
First input end, the second input and the first outfan are included, the driving breaking circuit includes the 3rd input, the 4th input
With the second outfan；
The high order end of the semiconductor power switch respectively with high potential pin and the voltage clamping and sample circuit
First input end connects, and low order end is connected with the second input of sample circuit with grounding pin and the voltage clamping respectively；
The voltage clamping is connected with the first outfan of sample circuit with the 3rd input for driving breaking circuit；
The 4th input for driving breaking circuit is connected with controlling switch, the second outfan and the semiconductor power
The control end connection of switch.
Preferably, the voltage clamping is included with sample circuit：Voltage clamping circuit and voltage sampling circuit, wherein, electricity
Pressure clamp circuit is when the semiconductor power switch disconnects, it is ensured that the voltage sampling circuit does not work, voltage sampling circuit
When the semiconductor power switch is turned on, detect by the electric current of the semiconductor power switch whether excessively stream；
The input of the voltage clamping circuit and the high order end of the semiconductor power switch and the high potential pin
Connect respectively, the input connection of the outfan of the voltage clamping circuit and the voltage sampling circuit, the voltage sample
The outfan of circuit is connected with the 3rd input for driving breaking circuit.
Preferably, the voltage sampling circuit includes the second diode and the second stabilivolt, the moon of second diode
Pole is connected with the high order end of the semiconductor power switch, anode is connected with the negative electrode of second stabilivolt, and described second is steady
The anode of pressure pipe is the first outfan of the voltage clamping and sample circuit, with the 3rd input for driving breaking circuit
Connection；
When the semiconductor power switch is turned on, the voltage of second diode and the semiconductor power switch it
During with exceeding the voltage stabilizing value of second stabilivolt, second stabilivolt punctures, so as to detect by the quasiconductor work(
The overcurrent of rate switch.
Preferably, the voltage clamping circuit include the first diode, first resistor, second resistance, the first stabilivolt,
One electric capacity, 3rd resistor, the first audion and the 4th resistance；
The anode of first diode and high potential pin connection, negative electrode and first resistor connection, it is described
Second resistance is connected between the negative electrode and the first resistor of first stabilivolt, the anode of first stabilivolt and institute
Grounding pin connection is stated, first electric capacity is in parallel with first stabilivolt, described in one end of the 3rd resistor is connected to
Between the colelctor electrode of the negative electrode of the first stabilivolt and first audion, the base stage of first audion is connected to described
Between one resistance and second resistance, emitter stage is connected with grounding pin by the 4th resistance；
When the semiconductor power switch disconnects, the first electric capacity charges, first triode ON, and the described 1st
Voltage stabilizing value of the current potential of pole pipe colelctor electrode less than second stabilivolt, disconnects in the semiconductor power switch so as to ensure that
When voltage sampling circuit do not work.
Preferably, first diode is made up of carborundum or gallium nitride material.
Preferably, the first resistor is made up of multiple resistant series.
Preferably, the driving breaking circuit includes：Second audion and the 3rd audion, the base of second audion
Pole and the voltage clamping are connected with the first outfan of sample circuit, colelctor electrode is connected to the control of the semiconductor power switch
Between end processed and the controlling switch, the colelctor electrode connection of emitter stage and the 3rd audion, the base of the 3rd audion
Pole and controlling switch connection, emitter stage and grounding pin connection；
The controlling switch output voltage signal, the semiconductor power switch conducting, the 3rd triode ON, when
During the semiconductor power switch excessively stream, second triode ON, so that the semiconductor power switch disconnects.
Preferably, the driving breaking circuit also includes：5th resistance and the 6th resistance, the 5th resistant series are in institute
State between the base stage and the controlling switch of the 3rd audion, the 6th resistance be connected to the 3rd audion base stage and
Between the grounding pin.
Preferably, the semiconductor power switch is audion, mos field effect transistor, brilliant lock
In pipe, silicon carbide transistor, gallium nitride transistor, HEMT and insulated gate bipolar transistor one
Kind.
Preferably, the semiconductor power switch, voltage clamping and sample circuit and driving breaking circuit encapsulation is integrated in
Integrally.
Compared with prior art, the integrated form semiconductor power switch device that the present invention is provided, employs the device of integrated form
Part structure, shortens the path of the signal sampling-transmission-process-execution of overcurrent protection, lowers the response time delay of overcurrent protection,
Realize the overcurrent protection to each semiconductor power switch, it is adaptable to any topological structure, eliminate the pin electricity of encapsulation
Sense and PCB trace inductance, hence it is evident that reduce stray inductance, eliminate lead-edge-blanking circuit, improve the reliability of overcurrent protection.
Description of the drawings
In order to be illustrated more clearly that the technical scheme of the embodiment of the present invention, below by to be used attached needed for embodiment
Figure is briefly described.It should be appreciated that the following drawings illustrate only certain embodiments of the present invention, thus be not construed as it is right
The restriction of scope, for those of ordinary skill in the art, on the premise of not paying creative work, can be with according to this
A little accompanying drawings obtain other related accompanying drawings.
Fig. 1 is a kind of block diagram of integrated form semiconductor power switch device provided in an embodiment of the present invention.
Fig. 2 is the circuit connection diagram of a kind of voltage clamping provided in an embodiment of the present invention and sample circuit.
Fig. 3 is a kind of circuit connection diagram of integrated form semiconductor power switch device provided in an embodiment of the present invention.
Fig. 4 is a kind of excessively stream simulation result figure of integrated form semiconductor power switch device provided in an embodiment of the present invention.
Icon：1- integrated form semiconductor power switch devices；S1- semiconductor power switch；30- voltage clampings and sampling electricity
Road；50- drives breaking circuit；101- high order ends；103- low order ends；105- control ends；301- first input ends；303- second is defeated
Enter end；The first outfans of 305-；The 3rd inputs of 501-；The 4th inputs of 503-；The second outfans of 505-；HV- high potentials draw
Foot；Driver- controlling switch；GND- grounding pins；31- voltage clamping circuits；33- voltage sampling circuits；The one or two poles of D1-
Pipe；R1- first resistors；R2- second resistances；The first stabilivolts of Z1-；The first electric capacity of C1-；R3- 3rd resistors；The one or three poles of Q1-
Pipe；The 4th resistance of R4-；The second diodes of D2-；The second stabilivolts of Z2-；The second audions of Q2-；The 3rd audions of Q3-；R5-
Five resistance；The 6th resistance of R6-.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described.Obviously, described embodiment a part of embodiment only of the invention, rather than the embodiment of whole.It is logical
Often the component of the embodiment of the present invention herein described and illustrated in accompanying drawing can be arranged and be designed with a variety of configurations.
Therefore, the detailed description of embodiments of the invention below to providing in the accompanying drawings is not intended to limit claimed
The scope of the present invention, but be merely representative of the present invention selected embodiment.Based on embodiments of the invention, people in the art
The every other embodiment obtained on the premise of creative work is not made by member, belongs to the scope of protection of the invention.
It should be noted that：Similar label and letter represent similar terms in following accompanying drawing, therefore, once a certain Xiang Yi
It is defined in individual accompanying drawing, then in subsequent accompanying drawing which further need not be defined and is explained.In description of the invention
In, term " first ", " second ", " the 3rd ", " the 4th " etc. are only used for distinguishing description, and it is not intended that being or implying relative
Importance.
Fig. 1 is referred to, the embodiment of the present invention provides a kind of integrated form semiconductor power switch device 1, including quasiconductor work(
Rate switch S1, voltage clamping and sample circuit 30 and driving breaking circuit 50.
Semiconductor power switch S1 can be audion, mos field effect transistor (MOSFET), crystalline substance
Brake tube (SCR), silicon carbide transistor (SIC), gallium nitride transistor (GaN), HEMT (HEMT) and absolutely
One kind in edge grid bipolar transistor (IGBT).Semiconductor power switch S1 includes high order end 101, low order end 103 and control
End 105.
Voltage clamping and sample circuit 30 are used for detection by the electric current of semiconductor power switch S1 whether excessively stream.Voltage is embedding
Position includes first input end 301, the second input 303 and the first outfan 305 with sample circuit 30.
Breaking circuit 50 is driven for detecting by semiconductor power switch S1's in voltage clamping and sample circuit 30
During overcurrent, disconnect semiconductor power switch S1, to protect semiconductor power switch S1 to be not damaged by, play overcurrent protection
Effect.Breaking circuit 50 is driven to include the 3rd input 501, the 4th input 503 and the second outfan 505.
The high order end 101 of semiconductor power switch S1 respectively with high potential pin HV and voltage clamping and sample circuit 30
First input end 301 connects, low order end 103 respectively with the grounding pin GND and voltage clamping and the second of sample circuit 30
Input 303 connects.First outfan 305 and the 3rd input for driving breaking circuit 50 of voltage clamping and sample circuit 30
501 connections.Drive breaking circuit 50 the 4th input 503 be connected with controlling switch Driver, the second outfan 505 with partly lead
The control end 105 of body power switch S1 connects.Wherein, the high potential pin HV can output HIGH voltage, such as 3.3V, 5V or
The voltage of 12V.Controlling switch Driver can output voltage signal with control semiconductor power switch S1 conducting.
The semiconductor power switch S1, voltage clamping and sample circuit 30 and driving breaking circuit 50 can be encapsulated in together
In one housing.In one kind realizes structure, semiconductor power switch S1, voltage clamping and sample circuit 30 and driving shut-off are electric
Road 50 can be separate module, be linked together by connecting line.In another realizes structure, semiconductor power
Switch S1, voltage clamping and sample circuit 30 and driving breaking circuit 50 can be integrated in the core of a block semiconductor material by technique
On piece.For example, semiconductor power switch S1, voltage clamping and sample circuit 30 and driving breaking circuit 50 are integrated in into one block of silicon
On chip or gallium nitride chip.
Fig. 2 is referred to, is the circuit connection diagram of voltage clamping and sample circuit 30 in a preferred embodiment.The voltage clamping
Include voltage clamping circuit 31 and voltage sampling circuit 33 with sample circuit 30.
Voltage clamping circuit 31 is for when semiconductor power switch S1 disconnects, it is ensured that voltage sampling circuit 33 does not work.
Preferably, in the present embodiment, voltage clamping circuit 31 include the first diode D1, first resistor R1, second resistance R2, first
Stabilivolt Z1, the first electric capacity C1,3rd resistor R3, the first audion Q1 and the 4th resistance R4.
The anode of the first diode D1 and high potential pin HV connections, negative electrode and first resistor R1 connect
Connect.Second resistance R2 is connected between the negative electrode and first resistor R1 of the first stabilivolt Z1.Described first is steady
The anode of pressure pipe Z1 and grounding pin GND connections.The first electric capacity C1 is in parallel with the first stabilivolt Z1.Described
Three resistance R3 are connected between the colelctor electrode of the negative electrode of the first stabilivolt Z1 and the first audion Q1.First audion
The base stage of Q1 is connected between first resistor R1 and second resistance R2, emitter stage passes through the 4th resistance R4 and grounding lead
Foot GND connects.
Wherein, the first diode D1 can select the little material of Reverse recovery, to reduce switching loss, while avoiding first
False triggering of the reverse recovery current of diode D1 to overcurrent protection.Preferably, the first diode D1 is by carborundum or gallium nitride
Material is made.First resistor R1 can select the larger resistance of resistance, to reduce the current value of input, reduce loss.Meanwhile, base
In the consideration of pressure aspect, it is preferable that first resistor R1 is made up of multiple resistant series.Second resistance R2 can select resistance remote
Less than the resistance of first resistor R1.First electric capacity C1 can select the relatively large electric capacity of capacitance so that on the first electric capacity C1
Voltage is not in larger change.The first audion Q1 can be NPN type triode, first in another circuit
Audion Q1 can also be NMOS tube.
By above-mentioned setting, when the semiconductor power switch S1 disconnects, the high voltage of high potential pin HV outputs leads to
Cross the first diode D1 to charge the first electric capacity C1.Meanwhile, the magnitude of voltage on the first electric capacity C1 is limited to by the first stabilivolt Z1
The voltage stabilizing value of the first stabilivolt Z1, to provide the precision of voltage sample.The first audion Q1 conductings so that the first audion
Voltage stabilizing value of the current potential of Q1 colelctor electrodes less than the second stabilivolt Z2, the second stabilivolt Z2 do not puncture, and no electric current flows through the
Two stabilivolt Z2, so as to ensure that voltage sampling circuit 33 does not work when the semiconductor power switch S1 disconnects.Wherein,
Current potential of the current potential of the colelctor electrode of one audion Q1 equal to the negative electrode of the second stabilivolt Z2.
Voltage sampling circuit 33 is for when semiconductor power switch S1 is turned on, detection is by the semiconductor power switch
S1 whether excessively streams.Preferably, in the present embodiment, the voltage sampling circuit 33 includes the second diode D2 and the second stabilivolt
Z2。
The negative electrode of the second diode D2 is connected with the high order end 101 of the semiconductor power switch S1, anode and described
The negative electrode connection of two stabilivolt Z2.The anode of the second stabilivolt Z2 is the output of the voltage clamping and sample circuit 30
End, is connected with the second input 303 of breaking circuit 50 is driven.
By above-mentioned setting, when the semiconductor power switch S1 is turned on, the first electric capacity C1,3rd resistor R3, second
The semiconductor power switch S1 of diode D2 and conducting constitutes discharge loop.Wherein, the resistance of 3rd resistor R3 is larger, makes this
The electric current that discharge loop is produced flows through the loop of power circuit current value of its raceway groove when turning on much smaller than the semiconductor power switch S1,
There is excessive change with the forward voltage for avoiding the second diode D2.
The channel resistance of semiconductor power switch S1 may be considered a definite value, then semiconductor power switch S1 raceway grooves electricity
Magnitude of voltage in resistance can accurately reflect the size of the current value for flowing through the semiconductor power switch S1, and the magnitude of voltage passes through
Second diode D2 of forward conduction is delivered to the cathode terminal of the second stabilivolt Z2, A points as shown, so as to the current potential of A points can
To reflect the size of current for flowing through the semiconductor power switch S1.Therefore, a threshold value is set to the voltage of A points, when described
When voltage exceedes this threshold value, then judge excessively stream to be there occurs by the electric current of semiconductor power switch S1, and trigger driving shut-off
Circuit 50.Make voltage stabilizing value of the threshold value equal to the second stabilivolt Z2.When following conditions 1 are met, the second stabilivolt Z2 hits
Wear, electric current flows through the second stabilivolt Z2, by the second stabilivolt Z2 output current signals, triggering drives closes voltage sampling circuit 33
Deenergizing 50.
Is*Rdson+VF2>VZ2(condition 1)
Wherein, IsRepresent the electric current by semiconductor power switch S1；RdsonRepresent the raceway groove electricity of semiconductor power switch S1
Resistance；VF2Represent the forward voltage of the second diode D2；VZ2Represent the voltage stabilizing value of the second stabilivolt Z2.
If flowing through the electric current I of the semiconductor power switch S1SIt is less, there is no excessively stream, then condition 1 is unsatisfactory for,
Second stabilivolt Z2 then will not be breakdown, correspondingly, voltage sampling circuit 33 will not output current signal, then drive breaking circuit
50 do not work.
Fig. 3 is referred to, and breaking circuit 50 is driven for detecting by quasiconductor work(in voltage clamping and sample circuit 30
When rate switchs the overcurrent of S1, disconnect semiconductor power switch S1, to protect semiconductor power switch S1 to be not damaged by, rise
The effect of overcurrent protection.Preferably, breaking circuit 50 is driven to include：Second audion Q2, the 3rd audion Q3, the 5th resistance R5
With the 6th resistance R6.
The base stage and voltage clamping of the second audion Q2 are connected with the first outfan 305 of sample circuit 30, colelctor electrode connects
Be connected between the control end 105 of semiconductor power switch S1 and controlling switch Driver, the collection of emitter stage and the 3rd audion Q3
Electrode connects.The base stage of the 3rd audion Q3 is connected with controlling switch Driver by the 5th resistance R5 and to pass through the 6th electric
Resistance R6 is connected with grounding pin GND, emitter stage and grounding pin GND connect.When controlling switch Driver output voltage signal, make
Semiconductor power switch S1 is turned on, the 3rd audion Q3 conductings.When semiconductor power switch S1 excessively streams, voltage sampling circuit 33
Output current signal, when following conditions 2 are met, the second audion Q2 conductings, the control of the semiconductor power switch S1
End 105 connects grounding pin GND by the second audion Q2 and the 3rd audion Q3 of conducting, and the current potential of control end 105 is drawn
It is low, so cause the semiconductor power switch S1 be disconnected rapidly, so as to avoid the semiconductor power switch S1 because
Overcurrent is damaged.
Is*Rdson+VF2-VZ2>VBE2+VCE3(condition 2)
Wherein, VBE2For the threshold voltage of the second audion Q2, i.e. the second audion Q2 conducting voltages；VCE3For the three or three pole
Pressure drop when pipe Q3 is turned between collector and emitter.
If flowing through the electric current I of the semiconductor power switch S1SIt is less, there is no excessively stream, then condition 2 is unsatisfactory for,
Driving breaking circuit 50 will not be triggered and disconnect semiconductor power switch S1.
In breaking circuit 50 is driven, the second audion Q2 and the 3rd audion Q3 can be NPN type triode,
In another circuit, the second audion Q2 and the 3rd audion Q3 can also be NMOS tube.5th resistance R5 and the 6th resistance R6
Resistance need rationally to arrange, it is ensured that the voltage of controlling switch Driver output is through the 5th resistance R5 and the 6th resistance R6 partial pressures
It is supplied to the bias voltage of the 3rd audion Q3 reach its threshold value afterwards, turns on the 3rd audion Q3.By right, the 5th resistance
The integrated and design of R5, the 6th resistance R6 and the 3rd audion Q3, can avoid in the semiconductor power switch S1 in pass
During disconnected state, as the high potential of high potential pin HV outputs causes the second stabilivolt Z2 to puncture, false triggering drives breaking circuit
50 so that the semiconductor power switch S1 can not be normally-open.
Fig. 4 is referred to, Fig. 4 is the excessively stream emulation of integrated form semiconductor power switch device provided in an embodiment of the present invention 1
Result figure.It can be seen that certain value is clamped at by the electric current of integrated form semiconductor power switch device 1, no longer
Continue to increase, so as to protect the power switch pipe will not overcurrent damage.
In prior art, for the overcurrent damage problem of semiconductor power switch S1, the counter-measure of employing is mainly logical
Over-sampling resistance carrys out the size of sample rate current as current transformer, current sampling data is delivered to control IC or DSP, by controlling
IC processed or DSP come judge whether need shut-off drive output, so as to turn off semiconductor power switch S1, it is to avoid overcurrent damage.
Overcurrent protection to realize semiconductor power switch S1 by the way of prior art is provided has the disadvantage that：First, sampling-biography
The loop path passed-process-perform is longer, it may appear that longer and uncontrollable time delay, causes the response to excessively stream not in time.Its
It is secondary, there is the stray inductance that can not ignore in sample path, the inductance is mainly made up of crucial inductance and PCB trace inductance,
In the moment that semiconductor power switch S1 is opened, stray inductance can cause obvious due to voltage spikes interference, need lead-edge-blanking electricity
Road, i.e., in the moment opened, over-current detection defencive function is prohibited, and this can bring very big risk.Again, this scheme needs
Extra current sampling resistor, can bring extra conduction loss.Finally, for bridge converter circuit, this protection mechanism
It is difficult to be prevented effectively from the straight-through caused overcurrent damages of upper and lower semiconductor power switch S1.
The integrated form semiconductor power switch device 1 that the present invention is provided, using the channel resistance of semiconductor power switch S1
As sampling resistor, semiconductor power switch S1 whether excessively streams are detected using the breakdown characteristics of the second stabilivolt Z2, and makes
Two audion Q2 are turned on when the second stabilivolt Z2 punctures, to disconnect semiconductor power switch S1, so as to realize current detecting with
Overcurrent protection function.
Compared with prior art, the integrated form semiconductor power switch device 1 that the present invention is provided shortens overcurrent protection
The path of signal sampling-transmission-process-execution, lowers the response time delay of overcurrent protection, and simple structure, manufacture difficulty are low.And
And, as the conducting resistance of itself is managed by the use of semiconductor power switch S1 as sampling resistor, hence it is evident that reduce sampling loss, carry
High overall efficiency.Additionally, the integrated form semiconductor power switch device 1 that the present invention is provided employs the device junction of integrated form
Structure, eliminates the pin inductance and PCB trace inductance of encapsulation, hence it is evident that reduce stray inductance, eliminate lead-edge-blanking circuit, carry
The high reliability of overcurrent protection.By voltage clamping and sample circuit 30 and driving breaking circuit 50 and semiconductor power switch S1
It is integrated in one, realizes the overcurrent protection to each semiconductor power switch S1, it is adaptable to any topological structure, and reduces
The complexity and cost of peripheral circuit.
In describing the invention, it should be noted that unless otherwise clearly defined and limited, term " setting ", " phase
Company ", " connection " should be interpreted broadly, for example, it may be being fixedly connected, or being detachably connected, or be integrally connected.Can
Being to be mechanically connected, or be electrically connected with.Can be joined directly together, it is also possible to be indirectly connected to by intermediary, can be with
It is the connection of two element internals.For the ordinary skill in the art, can understand that above-mentioned term exists with concrete condition
Concrete meaning in the present invention.
In describing the invention, in addition it is also necessary to explanation, term " on ", D score, " interior ", the orientation of instruction such as " outward " or
Position relationship be based on orientation shown in the drawings or position relationship, or the invention product using when the orientation usually put or
Position relationship, is for only for ease of the description present invention and simplifies description, rather than indicates or imply that the device or element of indication must
With specific orientation, with specific azimuth configuration and operation, therefore must be not considered as limiting the invention.
The preferred embodiments of the present invention are the foregoing is only, the present invention is not limited to, for the skill of this area
For art personnel, the present invention can have various modifications and variations.It is all within the spirit and principles in the present invention, made any repair
Change, equivalent, improvement etc., should be included within the scope of the present invention.
Claims (10)
1. a kind of integrated form semiconductor power switch device (1), it is characterised in that include：Semiconductor power switch (S1), detection
By the electric current of the semiconductor power switch (S1) whether the voltage clamping of excessively stream and sample circuit (30), and in the voltage
Clamped and sample circuit (30) makes the quasiconductor work(when detecting the overcurrent by the semiconductor power switch (S1)
The driving breaking circuit (50) that rate switch (S1) disconnects, wherein：
The semiconductor power switch (S1) includes high order end (101), low order end (103) and control end (105), and the voltage is embedding
Position is with sample circuit (30) including first input end (301), the second input (303) and the first outfan (305), the driving
Breaking circuit (50) includes the 3rd input (501), the 4th input (503) and the second outfan (505)；
The high order end (101) of the semiconductor power switch (S1) respectively with high potential pin (HV) and the voltage clamping with adopt
Sample circuit (30) first input end (301) connection, low order end (103) respectively with grounding pin (GND) and the voltage clamping
It is connected with second input (303) of sample circuit (30)；
The voltage clamping is defeated with the 3rd of driving breaking circuit (50) the with first outfan (305) of sample circuit (30)
Enter end (501) connection；
The 4th input (503) for driving breaking circuit (50) is connected with controlling switch (Driver), the second outfan
(505) it is connected with the control end (105) of the semiconductor power switch (S1).
2. integrated form semiconductor power switch device (1) according to claim 1, it is characterised in that the voltage clamping
Include with sample circuit (30)：Voltage clamping circuit (31) and voltage sampling circuit (33), wherein, voltage clamping circuit (31) exists
When the semiconductor power switch (S1) disconnects, it is ensured that the voltage sampling circuit (33) does not work, voltage sampling circuit (33)
When the semiconductor power switch (S1) is turned on, detect by the electric current of the semiconductor power switch (S1) whether excessively stream；
The input of the voltage clamping circuit (31) and the high order end (101) of the semiconductor power switch (S1) and the height
Current potential pin (HV) connects respectively, the input of the outfan and the voltage sampling circuit (33) of the voltage clamping circuit (31)
End connection, the outfan of the voltage sampling circuit (33) is with the 3rd input (501) for driving breaking circuit (50) even
Connect.
3. integrated form semiconductor power switch device (1) according to claim 2, it is characterised in that the voltage sample
Circuit (121) includes the second diode (D2) and the second stabilivolt (Z2), the negative electrode of second diode (D2) and described half
High order end (101) connection of conductor power switch (S1), anode are connected with the negative electrode of second stabilivolt (Z2), and described second
The anode of stabilivolt (Z2) is first outfan (305) of the voltage clamping and sample circuit (30), drives shut-off with described
3rd input (501) connection of circuit (50)；
When the semiconductor power switch (S1) is turned on, second diode (D2) and the semiconductor power switch (S1)
Voltage sum exceed second stabilivolt (Z2) voltage stabilizing value when, second stabilivolt (Z2) punctures, so as to detect
By the overcurrent of the semiconductor power switch (S1).
4. integrated form semiconductor power switch device (1) according to claim 3, it is characterised in that the voltage clamping
Circuit (31) includes the first diode (D1), first resistor (R1), second resistance (R2), the first stabilivolt (Z1), the first electric capacity
(C1), 3rd resistor (R3), the first audion (Q1) and the 4th resistance (R4)；
The anode of first diode (D1) and the high potential pin (HV) connection, negative electrode and the first resistor (R1) are even
Connect, the second resistance (R2) is connected between the negative electrode and the first resistor (R1) of first stabilivolt (Z1), described
The anode of the first stabilivolt (Z1) and the grounding pin (GND) connection, first electric capacity (C1) and first stabilivolt
(Z1) in parallel, the 3rd resistor (R3) is connected to the current collection of the negative electrode and the first audion (Q1) of first stabilivolt (Z1)
Between pole, the base stage of first audion (Q1) is connected between the first resistor (R1) and second resistance (R2), launches
Pole is connected with grounding pin (GND) by the 4th resistance (R4)；
When the semiconductor power switch (S1) disconnects, the first electric capacity (C1) charges, the first audion (Q1) conducting, institute
The voltage stabilizing value of the current potential less than second stabilivolt (Z2) of the first audion (Q1) colelctor electrode is stated, so as to ensure that described half
When conductor power switch (S1) disconnects, voltage sampling circuit (33) does not work.
5. integrated form semiconductor power switch device (1) according to claim 4, it is characterised in that the one or two pole
Pipe (D1) is made up of carborundum or gallium nitride material.
6. integrated form semiconductor power switch device (1) according to claim 4, it is characterised in that the first resistor
(R1) it is made up of multiple resistant series.
7. integrated form semiconductor power switch device (1) according to claim 1, it is characterised in that described to drive shut-off
Circuit (50) includes：Second audion (Q2) and the 3rd audion (Q3), the base stage and the electricity of second audion (Q2)
Press-fitted position is connected with first outfan (305) of sample circuit (30), colelctor electrode is connected to the semiconductor power switch (S1)
Control end (105) and the controlling switch (Driver) between, the colelctor electrode of emitter stage and the 3rd audion (Q3) connects
Connect, the base stage of the 3rd audion (Q3) and the controlling switch (Driver) connection, emitter stage and the grounding pin
(GND) connect；
Controlling switch (Driver) output voltage signal, semiconductor power switch (S1) conducting, the three or three pole
Pipe (Q3) conducting, when the semiconductor power switch (S1) excessively stream, the second audion (Q2) conducting, so that described half
Conductor power switch (S1) disconnects.
8. integrated form semiconductor power switch device according to claim 7, it is characterised in that the driving breaking circuit
(50) also include：5th resistance (R5) and the 6th resistance (R6), the 5th resistance (R5) are connected on the 3rd audion
(Q3), between base stage and the controlling switch (Driver), the 6th resistance (R6) is connected to the 3rd audion (Q3)
Base stage and the grounding pin (GND) between.
9. the integrated form semiconductor power switch device (1) according to claim 1-8 any one, it is characterised in that institute
State semiconductor power switch (S1) be audion, mos field effect transistor, IGCT, carborundum crystals
One kind in pipe, gallium nitride transistor, HEMT and insulated gate bipolar transistor.
10. integrated form semiconductor power switch device (1) according to claim 9, it is characterised in that the quasiconductor work(
Rate switch (S1), voltage clamping and sample circuit (30) and driving breaking circuit (50) encapsulation are integrated in one.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710030598.2A CN106685384B (en) | 2017-01-17 | 2017-01-17 | Integrated form semiconductor power switch device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710030598.2A CN106685384B (en) | 2017-01-17 | 2017-01-17 | Integrated form semiconductor power switch device |
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| CN106685384B CN106685384B (en) | 2019-10-08 |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110481324A (en) * | 2019-07-15 | 2019-11-22 | 新乡市光明电器有限公司 | Load control circuit, load control mould group and electric control box |
| CN112368896A (en) * | 2020-05-20 | 2021-02-12 | 英诺赛科（珠海）科技有限公司 | Electronic device and overcurrent protection circuit |
| CN113659827A (en) * | 2021-08-20 | 2021-11-16 | 华中科技大学 | Blanking time self-adaptive desaturation protection improved circuit, design method and application |
| CN115276627A (en) * | 2022-08-04 | 2022-11-01 | 佛山市南海区赛德声电子有限公司 | Gallium nitride MOSFET conduction loss power limiting circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102832599A (en) * | 2012-08-24 | 2012-12-19 | 电子科技大学 | Over-current protection circuit |
| CN203119854U (en) * | 2013-03-26 | 2013-08-07 | 北京经纬恒润科技有限公司 | Output short-circuit protection circuit of circuit taking MOS (metal oxide semiconductor) tube as high-end switch |
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2017
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102832599A (en) * | 2012-08-24 | 2012-12-19 | 电子科技大学 | Over-current protection circuit |
| CN203119854U (en) * | 2013-03-26 | 2013-08-07 | 北京经纬恒润科技有限公司 | Output short-circuit protection circuit of circuit taking MOS (metal oxide semiconductor) tube as high-end switch |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110481324A (en) * | 2019-07-15 | 2019-11-22 | 新乡市光明电器有限公司 | Load control circuit, load control mould group and electric control box |
| CN112368896A (en) * | 2020-05-20 | 2021-02-12 | 英诺赛科（珠海）科技有限公司 | Electronic device and overcurrent protection circuit |
| WO2021232286A1 (en) * | 2020-05-20 | 2021-11-25 | Innoscience (Zhuhai) Technology Co., Ltd. | Electronic device and over current protection circuit |
| US11721969B2 (en) | 2020-05-20 | 2023-08-08 | Innoscience (Zhuhai) Technology Co., Ltd. | Electronic device and over current protection circuit |
| CN113659827A (en) * | 2021-08-20 | 2021-11-16 | 华中科技大学 | Blanking time self-adaptive desaturation protection improved circuit, design method and application |
| CN115276627A (en) * | 2022-08-04 | 2022-11-01 | 佛山市南海区赛德声电子有限公司 | Gallium nitride MOSFET conduction loss power limiting circuit |
| CN115276627B (en) * | 2022-08-04 | 2023-10-24 | 佛山市南海区赛德声电子有限公司 | Gallium nitride MOSFET conduction loss power limiting circuit |
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|---|---|
| CN106685384B (en) | 2019-10-08 |
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