CN106684196A - Single-I-shaped condensing photovoltaic cell chip - Google Patents
Single-I-shaped condensing photovoltaic cell chip Download PDFInfo
- Publication number
- CN106684196A CN106684196A CN201710125622.0A CN201710125622A CN106684196A CN 106684196 A CN106684196 A CN 106684196A CN 201710125622 A CN201710125622 A CN 201710125622A CN 106684196 A CN106684196 A CN 106684196A
- Authority
- CN
- China
- Prior art keywords
- photovoltaic battery
- electrode layer
- condensation photovoltaic
- positive electrode
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 14
- 230000005494 condensation Effects 0.000 claims description 40
- 238000009833 condensation Methods 0.000 claims description 40
- 239000000758 substrate Substances 0.000 claims description 19
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- 229910052732 germanium Inorganic materials 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000010248 power generation Methods 0.000 abstract description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/0543—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means comprising light concentrating means of the refractive type, e.g. lenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
The invention relates to a single-I-shaped condensing photovoltaic cell chip and belongs to the technical field of solar photovoltaic power generation. The cell chip comprises a negative pole layer, a condensing photovoltaic cell base material layer, a positive pole layer and an effective area, one side of the condensing photovoltaic cell base material layer is covered with the negative pole layer while the other side of the same is covered with the positive pole layer, and a portion outside the negative pole layer is the effective area. Consumption of a condensing photovoltaic cell base material can be greatly reduced, so that manufacturing cost of the condensing photovoltaic cell chip can be reduced; a negative pole of 0.5-1.5mm in width and 0.2-1mm in thickness can bear rated current up to 50 amperes.
Description
Technical field
The present invention relates to a kind of photovoltaic generation part, and in particular to a kind of single I types Condensation photovoltaic battery chip, belong to solar energy
Technical field of photovoltaic power generation.
Background technology
Generally, the principal benefits sought by light gathering photovoltaic power generating system are on the effective area of Condensation photovoltaic battery chip
The high density sunlight for converging is obtained from Fresnel Lenses.The multiple of lens is higher, and the density for obtaining sunlight is higher, identical faces
The Condensation photovoltaic battery chip used in product is fewer, and the cost of electricity-generating in unit area is lower.
It is all square generally to converge the focal spot for coming at present from Fresnel Lenses, and the shapes and sizes of the focal spot are also usual
It is consistent with the shapes and sizes of Condensation photovoltaic battery chip, so that Fresnel Lenses converges the focal spot for coming can converge completely
To on Condensation photovoltaic battery chip.But in actual applications, the positive electrode layer on Condensation photovoltaic battery chip is always less than poly-
Light photovoltaic cell substrate layer, due to the substrate material on Condensation photovoltaic battery substrate layer it is relatively expensive（One square centimeter size
Substrate material about at 50 yuans or so）, the thus significant wastage substrate material of Condensation photovoltaic battery substrate layer.
The content of the invention
It is an object of the invention to provide a kind of single I types Condensation photovoltaic battery chip, the battery chip is to overcome existing skill
The deficiency of art.
In order to realize above-mentioned technical purpose, the present invention is adopted the technical scheme that：A kind of single I types Condensation photovoltaic battery core
Piece, is characterized in that, it includes positive electrode layer, Condensation photovoltaic battery substrate layer, positive electrode layer and effective area, the condensation photovoltaic
Cell base is laminated to be covered with positive electrode layer, and another side is covered with positive electrode layer, and the part outside the positive electrode layer is significant surface
Product.
The width of the positive electrode layer be 0.5 ~ 1.5mm, thickness for 0.2 ~ 1mm smooth I glyph shapes, positive electrode layer and
The one of end face of Condensation photovoltaic battery substrate layer is completely superposed.
The Condensation photovoltaic battery substrate layer is GaInP（Indium phosphide is transferred）/GaAs（GaAs）/Ge（Germanium）Three layers of combination
Body.
The positive electrode layer is a plane for fully sealing, positive electrode layer area shape and Condensation photovoltaic battery base material aspect
Product shape is just the same.
The effective area is square shape.
Advantages of the present invention and good effect are：1st, this kind of battery chip can greatly reduce Condensation photovoltaic battery base material material
The consumption of material, can thus reduce the cost of manufacture of Condensation photovoltaic battery chip；2nd, width be 0.5 ~ 1.5mm and thickness be 0.2 ~
The negative electrode of 1mm can bear the rated current up to 50 amperes.
Description of the drawings
Fig. 1 is a kind of single I types Condensation photovoltaic battery chip front view.
Fig. 2 is a kind of single I types Condensation photovoltaic battery chip top view.
Wherein：1st, positive electrode layer, 2, Condensation photovoltaic battery substrate layer, 3, positive electrode layer, 4, effective area.
Specific embodiment
The present invention is further illustrated below in conjunction with the accompanying drawings.
A kind of single I types Condensation photovoltaic battery chip, as shown in Fig. 1~2, including positive electrode layer 1, Condensation photovoltaic battery base material
Layer 2, positive electrode layer 3 and effective area 4,2 one side of Condensation photovoltaic battery substrate layer are covered with positive electrode layer 1, and another side is covered with
Positive electrode layer 3, the part outside the positive electrode layer 1 are effective area 4, and the width of the positive electrode layer is 0.5 ~ 1.5mm, thick
The smooth I glyph shapes for 0.2 ~ 1mm are spent, both can guarantee that high current was guided by positive electrode layer 3 and positive electrode layer 1 much smootherly
Out, also can guarantee that each electrode layer and connecting line can bear 50 amperes of rated current, at the same also ensure that well welding or
Person binds the wire of 200um ~ 1mm, and wire the end of a thread will not be entered in the effective area of Condensation photovoltaic battery chip, negative electrode
Layer and the one of end face of Condensation photovoltaic battery substrate layer are completely superposed, and thus make use of Condensation photovoltaic battery base material completely
Layer, so as to reach the purpose for saving Condensation photovoltaic battery substrate layer substrate material.
In the present invention, used as row embodiment is become, the positive and negative electrode layer of Condensation photovoltaic battery chip can also be exchanged and be set
Customization is made, and positive electrode layer and Condensation photovoltaic battery substrate layer wherein any one end face are completely superposed, therefore the right of the present invention is protected
Shield scope is defined by the following claims.
Claims (5)
1. a kind of single I types Condensation photovoltaic battery chip, is characterized in that, it includes positive electrode layer, Condensation photovoltaic battery substrate layer, just
Electrode layer and effective area, the Condensation photovoltaic battery base material is laminated to be covered with positive electrode layer, and another side is covered with positive electrode layer, institute
It is effective area to state the part outside positive electrode layer.
2. a kind of single I types Condensation photovoltaic battery chip according to claim 1, is characterized in that, the width of the positive electrode layer
Spend for 0.5 ~ 1.5mm, smooth I glyph shape of the thickness for 0.2 ~ 1mm, positive electrode layer and Condensation photovoltaic battery substrate layer wherein
Individual end face is completely superposed.
3. a kind of single I types Condensation photovoltaic battery chip according to claim 1, is characterized in that, the Condensation photovoltaic battery
Substrate layer is GaInP（Indium phosphide is transferred）/GaAs（GaAs）/Ge（Germanium）Three layers of assembly.
4. a kind of single I types Condensation photovoltaic battery chip according to claim 1, is characterized in that, the positive electrode layer is one
The plane for fully sealing, positive electrode layer area shape and Condensation photovoltaic battery substrate layer area shape it is just the same.
5. a kind of single I types Condensation photovoltaic battery chip according to claim 1, is characterized in that, the effective area is for just
Square configuration.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710125622.0A CN106684196A (en) | 2017-03-04 | 2017-03-04 | Single-I-shaped condensing photovoltaic cell chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710125622.0A CN106684196A (en) | 2017-03-04 | 2017-03-04 | Single-I-shaped condensing photovoltaic cell chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106684196A true CN106684196A (en) | 2017-05-17 |
Family
ID=58861853
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710125622.0A Pending CN106684196A (en) | 2017-03-04 | 2017-03-04 | Single-I-shaped condensing photovoltaic cell chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106684196A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040099965A1 (en) * | 2001-06-16 | 2004-05-27 | Byung-Jun Park | Integrated circuits having self-aligned metal contact structures |
| CN102881730A (en) * | 2012-10-13 | 2013-01-16 | 成都聚合科技有限公司 | High-efficiency concentrating photovoltaic cell chip |
| CN103997288A (en) * | 2014-06-11 | 2014-08-20 | 成都聚合科技有限公司 | Concentrating solar cell |
-
2017
- 2017-03-04 CN CN201710125622.0A patent/CN106684196A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040099965A1 (en) * | 2001-06-16 | 2004-05-27 | Byung-Jun Park | Integrated circuits having self-aligned metal contact structures |
| CN102881730A (en) * | 2012-10-13 | 2013-01-16 | 成都聚合科技有限公司 | High-efficiency concentrating photovoltaic cell chip |
| CN103997288A (en) * | 2014-06-11 | 2014-08-20 | 成都聚合科技有限公司 | Concentrating solar cell |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170517 |