CN106684107A - Image sensor chip packaging method - Google Patents
Image sensor chip packaging method Download PDFInfo
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- CN106684107A CN106684107A CN201611242461.5A CN201611242461A CN106684107A CN 106684107 A CN106684107 A CN 106684107A CN 201611242461 A CN201611242461 A CN 201611242461A CN 106684107 A CN106684107 A CN 106684107A
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- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 78
- 239000002184 metal Substances 0.000 claims abstract description 75
- 229910052751 metal Inorganic materials 0.000 claims abstract description 75
- 238000012856 packing Methods 0.000 claims description 22
- 239000000956 alloy Substances 0.000 claims description 19
- 229910045601 alloy Inorganic materials 0.000 claims description 19
- 238000005516 engineering process Methods 0.000 claims description 11
- 238000010276 construction Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 5
- 238000009713 electroplating Methods 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 4
- 239000000839 emulsion Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 18
- 238000004026 adhesive bonding Methods 0.000 abstract description 2
- 238000000059 patterning Methods 0.000 description 23
- 230000033001 locomotion Effects 0.000 description 8
- 230000006641 stabilisation Effects 0.000 description 7
- 238000011105 stabilization Methods 0.000 description 7
- 206010044565 Tremor Diseases 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 210000004247 hand Anatomy 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000003796 beauty Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000005352 galvanomagnetic phenomena Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/54—Mounting of pick-up tubes, electronic image sensors, deviation or focusing coils
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
The invention relates to an image sensor chip packaging method. The packaging method comprises the steps of providing a supporting substrate, and gluing an image sensor chip on the supporting substrate; forming a metal wire on the image sensor chip; providing an upper substrate, and assembling the image sensor chip and the upper substrate into an integrated body, wherein an elastic structure is formed on the inner side, close to the image sensor chip, of the metal wire; and removing the supporting substrate to form a packaging part, wherein the packaging part can move in a horizontal direction so as to realize optical anti-shaking function of the image sensor chip.
Description
Technical field
The present invention relates to image sensor technologies field, more particularly to a kind of method for packing of image sensor chip.
Background technology
Miniature image acquisition device is typically integrated with existing portable mobile apparatus, for quickly and easily realizing taking pictures
Function.When handheld mobile device is taken pictures to object, the major reason for affecting image taking quality is trembling for hand-held generation
It is dynamic.Optical anti-vibration is farthest to reduce operator in use due to trembling by special camera lens or photo-sensitive cell
It is dynamic to cause image unstable.Optical anti-vibration technology is that the gyroscope in camera lens detects small movement, and can be by signal
Reach microprocessor and calculate the displacement for needing compensation immediately, then by compensating lens set or mobile photo-sensitive cell, according to trembling
Dynamic direction and displacement are compensated for, so as to the image fog for effectively overcoming the vibration because of camera to produce.Existing optics is prevented
Tremble mainly in the following way：
1. eyeglass movable type optical anti-vibration
Such optical anti-vibration mainly compensates rocking for camera by the motion of eyeglass.In the stabilization camera lens of Canon, all fill
There is gyrosensor, it can accurately detect vibration in one's hands, and it is converted into the signal of telecommunication, through the built-in calculating of camera lens
After machine process, control one group of amendment optics and make the movement parallel with film or CCD, CMOS plane, offset due to handss shake
The imaging line skew for causing.This system can effectively improve the effect of hand-held shooting.
Camera lens can pass through a pair shakes that built-in gyro sensor detects camera, and by lens assembly to the side shaken
To adjustment, to offset this shake, fuzzy pictures are prevented.If partly tripped in the case where image stabilizing function is enabled, mirror
Head can start camera shake compensation after 0.5 second.Such camera lens can reduce in theory two to three-level shutter speed.Due to mirror
The potential optical property of head is optimized, and can capture the image of beauty.
2. photo-sensitive cell movable type optical anti-vibration
Based on consideration of the eyeglass movable type optical anti-vibration in terms of production technology and cost, part manufacturer have developed photo-sensitive cell
Portable optical anti-vibration（CCD or CMOS stabilizations）System.This technology is that occur with the appearance of digital camera, because its
Principle determines that film machine can not possibly by this way accomplish stabilization.Photo-sensitive cell movable type optical anti-vibration（CCD or CMOS stabilizations）
It is exactly by the photo-sensitive cell of digital camera（CCD/CMOS）Being fixed on one can pass through on the platform of galvanomagnetic-effect parallel sliding,
When shooting, platform can utilize the hysteresis of electromagnetism to cause（CCD or CMOS stabilizations）Maintain static in short time, then necessarily
The purpose of stabilization is reached in degree.
In photo-sensitive cell movable type optical anti-vibration, United States Patent (USP) US9264,591B2, denomination of invention：《Comb
DriveAnd Leaf Spring Camera Actuator》A kind of technology is disclosed, and it is by being arranged on image sensor chip
（Imagesensor 490）The Flexible Linkage450 connection OIS Leaf-Spring Flexures430 of surrounding connect again
AFLeaf-Spring Flexures420 and the structure for passing through Outline of Pre-Deflection Body410 are connected to, when
When being focused, said structure can occur elastic deformation, drive image sensor chip to be moved, and further realize that optics is prevented
Tremble.In addition U.S. Patent application, application number：2015/0341534A1, denomination of invention：《Electrical Bar
LatchingFor Low Stiffness Flexure MEMS Actuator》Disclose a kind of suitable for imageing sensor mould
The MEMSActuator structures of group, by flexure arrays313 movable platform311, image sensing are connected to
Device chip is located on movable platform311, then realizes image sensor chip by the synergism of inside casing and housing
Movement in focus process, further realizes optical anti-vibration.Above-mentioned photo-sensitive cell movable type optical anti-vibration method structure is more multiple
It is miscellaneous, multiple frame for movement synergism are needed in imageing sensor module.In sum, a kind of new photo-sensitive cell is needed badly
Portable optical anti-vibration method.
The content of the invention
It is an object of the invention to provide a kind of method for packing of image sensor chip, realizes the optics of imageing sensor
Stabilization function.
In order to solve above-mentioned technical problem, the present invention provides a kind of method for packing of image sensor chip, including：
Supporting substrate is provided, image sensor chip is bonded on the supporting substrate；
Metal wire is formed on described image sensor chip；
Upper substrate is provided, described image sensor chip is integrated with upper substrate assembling, and the metal wire is passed near image
The inner side of sensor chip has elastic construction；The metal wire is electrically connected to outside away from the side of image sensor chip；
Remove the supporting substrate and form packaging part；The packaging part can be moved in the horizontal direction.
Optionally, the packaging part is contacted with a driver part, the driver part is used to drive described image to sense
Move or rotate in device chip level direction.
Optionally, there is pad at position corresponding with the pad of image sensor chip on the driver part, institute
State the pad that metal wire is electrically connected to the driver part away from the side of image sensor chip.
Optionally, the metal wire has extension away from the side of image sensor chip, and the extension outwards hangs
Sky, is suitable to be electrically connected to the external circuit board.
Optionally, one is pressed against end on the upper substrate, when upper substrate and image sensor chip are assembled, the pressure
By side pressure by the extension of metal wire, extension is caused to bend downwards and horizontal plane between in the angle more than 10 °.
Optionally, the supporting substrate is transparency carrier, using ephemeral key rubber alloy by described image sensor chip adhesive
On the supporting substrate；The ephemeral key rubber alloy is light-sensitive emulsion or heat-sensitive glue.
Optionally, the supporting substrate has hole away from the one side of described image sensor chip, and cleaning solution leads to
Cross described hole and remove the ephemeral key rubber alloy.
Optionally, the first groove is formed in the surface of the transparency carrier, first groove is suitable to bond described image
Sensor chip；
The second groove is formed in the surface of the transparency carrier, there is bulge-structure between first groove and the second groove,
Second groove is suitable to place the extension of the metal wire.
Optionally, the metal line portions region is arranged at the bulge-structure top；When upper substrate and imageing sensor
When chip is assembled, the upper substrate is bonded in the corresponding metal line portions region of bulge-structure.
Optionally, one end of the metal wire is electrically connected with the pad of described image sensor chip, the metal wire
The other end there is extension, the extension is electrically connected with the external circuit board.
Optionally, width of the height of the metal wire more than metal wire.
Optionally, the metal wire is formed using electroplating technology.
Relative to prior art, the method for packing of the image sensor chip of the present invention has the advantages that：
In the present invention, image sensor chip is integrated by metal wire with upper substrate assembling, and metal wire is near imageing sensor
The inner side of chip has elastic construction.The packaging part that image sensor chip is formed with upper substrate can be in water by elastic construction
The movement of flat or vertical direction, realizes the optical anti-vibration function of image sensor chip.
Description of the drawings
Fig. 1 is the flow chart of the method for packing of image sensor chip in one embodiment of the invention；
Fig. 2 a are the cross-sectional view of supporting substrate in the embodiment of the present invention one；
Fig. 2 b are that the first cross-sectional view for patterning photoresistance is formed in the embodiment of the present invention one；
Fig. 2 c are the cross-sectional view that the first groove is formed in the embodiment of the present invention one；
Fig. 2 d are that the second cross-sectional view for patterning photoresistance is formed in the embodiment of the present invention one；
Fig. 2 e are the cross-sectional view that the second groove is formed in the embodiment of the present invention one；
Fig. 2 f are that the 3rd cross-sectional view for patterning photoresistance is formed in the embodiment of the present invention one；
Fig. 2 g are the cross-sectional view that hole is formed in the embodiment of the present invention one；
Fig. 2 h are the cross-sectional view that ephemeral key rubber alloy is formed in the embodiment of the present invention one；
Fig. 2 i are the cross-sectional view that image sensor chip is bonded in the embodiment of the present invention one；
Fig. 2 j are that the 4th cross-sectional view for patterning photoresistance is formed in the embodiment of the present invention one；
Fig. 2 k are the cross-sectional view of deposited seed layer in the embodiment of the present invention one；
Fig. 2 l are the cross-sectional view of deposited metal layer in the embodiment of the present invention one；
Fig. 2 m are the cross-sectional view that metal wire is formed in the embodiment of the present invention one；
Fig. 2 n are that the 4th cross-sectional view for patterning photoresistance is removed in the embodiment of the present invention one；
Fig. 2 o are the cross-sectional view that upper substrate is bonded in the embodiment of the present invention one；
Fig. 3 is the structural representation of packaging part in the embodiment of the present invention one；
Fig. 4 a are the structural representation of metal wire in the embodiment of the present invention two；
Fig. 4 b are the structural representation of packaging part in the embodiment of the present invention two；
Fig. 4 c are the structural representation that driver part is bonded with packaging part in the embodiment of the present invention two.
Specific embodiment
Elaborate many details in order to fully understand the present invention in the following description.But the present invention can be with
Much it is different from alternate manner described here to implement, those skilled in the art can be in the situation without prejudice to intension of the present invention
Under do similar popularization, therefore the present invention is not embodied as being limited by following public.
Secondly, the present invention is described in detail using schematic diagram, when the embodiment of the present invention is described in detail, for purposes of illustration only, institute
It is example to state schematic diagram, and its here should not limit the scope of protection of the invention.
It is understandable to enable the above objects, features and advantages of the present invention to become apparent from, below in conjunction with accompanying drawing to the present invention
Image sensor chip method for packing be described in detail.Fig. 1 is the stream of the image sensor chip method for packing of the present invention
Cheng Tu, Fig. 2 a ~ Fig. 2 n are the generalized section of the corresponding device architecture of each step, and Fig. 3 is the structural representation of packaging part, this
The method for packing of bright image sensor chip comprises the steps：
Embodiment one
First, execution step S1, with reference to Fig. 2 a, there is provided supporting substrate 10, the supporting substrate 10 is transparency carrier, for example can be with
For glass substrate.With reference to shown in Fig. 2 b, form first in the surface of the transparency carrier 10 and pattern photoresistance 11, the first patterning
Photoresistance 11 covers the edge of the supporting substrate 10, in the present embodiment, using techniques such as gluing, exposure, developments the first figure is formed
Case photoresistance 11.Supporting substrate 10 described in the first patterning photoresistance 11 as mask etching, forms in the supporting substrate 10
First groove 21, with reference to shown in Fig. 2 c, first groove 21 is used to bond image sensor chip so that first groove
21 width is 5.0mm ~ 10.0mm.Afterwards, the first patterning photoresistance 11 is removed, in the present embodiment, for example, can be adopted
The organic solution such as plasma ash process or propanol wet clean process removes the first patterning photoresistance 11.
Then, with reference to shown in Fig. 2 d, in the transparency carrier 10 surface formed second pattern photoresistance 12, described second
Patterning photoresistance 12 covers the first groove 11 and the part supporting substrate 10, and exposes the portion around first groove 21
Divide the supporting substrate 10, supporting substrate 10 described in the described second patterning photoresistance 12 as mask etching forms the second groove
22, with reference to shown in Fig. 2 e.Second groove 22 is around around first groove 21, also, first groove
21 and second have bulge-structure 23 between groove 22.Afterwards, the second patterning photoresistance 12 is removed.In the present embodiment, the
The width of two grooves 22 is 0.5mm ~ 2.0mm.Further, second groove 22 is applied to the extension for placing metal wire,
So that the extension of metal wire is suspended in the second groove 22, the bulge-structure 23 is used as propping up that metal wire and upper substrate are bonded
Support structure, hence in so that depth of the depth of second groove 22 more than first groove 21.For example, first groove
21 depth is 0.1mm ~ 1.0mm, and the depth of second groove 22 is 0.5mm ~ 2.0mm, first groove 21 with it is described
Width between second groove 22（The width of bulge-structure 23）For 0.5mm ~ 1.0mm.
Again, with reference to shown in Fig. 2 f, the 3rd is formed on the supporting substrate 10 and patterns photoresistance 13, the 3rd patterning light
Resistance 13 covers the first groove 21, the second groove 22, and exposes the part supporting substrate 10 in the first groove 21, with the described 3rd
Patterning photoresistance 13 is supporting substrate 10 described in mask etching, forms hole 24 as shown in Figure 2 g.Afterwards, the described 3rd is removed
Patterning photoresistance 13.In the present embodiment, described hole 24 is connected with first groove 21, and through the supporting substrate 10,
The width of hole 23 is, for example, 0.5mm ~ 1.0mm, and hole 24 is used for follow-up cleaning solution by supporting substrate 10, removes ephemeral key
Rubber alloy.
It should be noted that formed on supporting substrate 10 successively in the present embodiment the first groove 21, the second groove 22 and
Hole 24, however, it will be appreciated by persons skilled in the art that forming the suitable of the first groove 21, the second groove 22 and hole 24
Sequence is not limited to this, in other embodiments of the invention can with sequentially form on supporting substrate 10 second groove 22,
One groove 21 and hole 24, or hole 24, the first groove 21 and the second groove 22 are sequentially formed, this is also in present invention protection
Within thought range, the present invention is not limited this.
Afterwards, with reference to shown in Fig. 2 h, ephemeral key rubber alloy 30 is formed on the supporting substrate 10, ephemeral key rubber alloy 30 is covered
First groove 21, the bulge-structure 23, second groove 22 and the remaining supporting substrate 10, the present embodiment
In, the ephemeral key rubber alloy 30 for example can be light-sensitive emulsion or heat-sensitive glue, and ephemeral key rubber alloy 30 is used for image sensor chip
40 are bonded on the supporting substrate 10.With reference to shown in Fig. 2 i, image sensor chip 40 is bonded by ephemeral key rubber alloy 30
On the supporting substrate 10, and described image sensor chip 40 is bonded in the first groove 21 of supporting substrate 10.Ability
Field technique personnel it is understood that image sensor chip 40 be photo-sensitive cell, convert optical signals to the signal of telecommunication, this for this
Art personnel are it should be understood that will not be described here.
Again, execution step S2, forms metal wire on described image sensor chip 40, and metal wire is used to pass image
Sensor chip is electrically connected with the external circuit board.Form metal wire specifically includes following sub-step：
With reference to shown in Fig. 2 j, the 4th is formed on the supporting substrate 10 and patterns photoresistance 14, the 4th patterning photoresistance 14 is covered
The part ephemeral key rubber alloy 30, and the ephemeral key rubber alloy of the top of the bulge-structure 23 is exposed, and the 4th patterning light
The also covering part described image sensor chip 40 of resistance 14, for example, exposes the part described image biography near bulge-structure 23
Sensor chip 40, also, the surface of the image sensor chip 40 for exposing has pad, for subsequently by imageing sensor core
Piece is electrically picked out.
With reference to shown in Fig. 2 k, on the supporting substrate 10 Seed Layer is formed（Seed layer）50, Seed Layer 50 is covered
The ephemeral key rubber alloy 30 for exposing, the patterning photoresistance 14 of image sensor chip 40 and the 4th for exposing.In the present embodiment, plant
Sublayer 50 is the metal level of gold, can form Seed Layer 50 using physical gas-phase deposition, and Seed Layer 50 covers the 4th pattern
Change photoresistance 14, the bulge-structure 23 and the parts of images sensor chip 40 for exposing, Seed Layer 50 is used for after electroplating technology
Continuous deposited metal layer.
With reference to shown in Fig. 2 l, the 5th is formed in the Seed Layer 50 and patterns photoresistance 15, the 5th patterning photoresistance 15 is sudden and violent
Expose the Seed Layer 50 of the top of the bulge-structure 23 and the Seed Layer 50 of the top of described image sensor chip 40, afterwards, adopt
With electroplating technology on Some seeds layer 50 deposited metal layer 60, metal level 60 for gold metal level, metal level 60 cover exposure
The Seed Layer 50 for going out.
With reference to shown in Fig. 2 m, the 5th patterning photoresistance 15 and the seed positioned at the lower section of the 5th patterning photoresistance 15 are removed
Layer 50, exposes the 4th patterning photoresistance 14.
With reference to shown in Fig. 2 n, the 4th patterning photoresistance 14 is removed, remaining Seed Layer 50 forms gold with metal level 60
Category line 70.One end of the metal wire 70 is electrically connected with the pad of described image sensor chip 40, for by image sensing
Device chip 40 is electrically picked out, and the other end of the metal wire 70 has extension, and the extension 72 is electrical with the external circuit board
Connection.Specifically, the metal wire 70 has elastic construction 71, the metal wire 70 near the inner side of image sensor chip 40
There is extension 72 away from the outside of image sensor chip 40, the extension 72 is outwards hanging, and is suspended on the second groove
In 22, extension 72 by image sensor chip 40 suitable for being electrically connected to the external circuit board（Not shown in Fig. 2 n）, so as to
Metal wire 70 is electrically connected with image sensor chip and the external circuit board.Additionally, in the present embodiment, the height of the metal wire 70
Degree（Perpendicular to the height that image sensor chip photosurface is located）More than the width of metal wire 70（Parallel to imageing sensor core
The width that piece photosurface is located）, for example, the height of the metal wire 70 is 50 μm ~ 200 μm, and the width of the metal wire 70 is
20μm~100μm。
Afterwards, execution step S3, with reference to shown in Fig. 2 o, there is provided upper substrate 80, by described image sensor chip 40 with it is upper
The assembling of substrate 80 is integrated.The subregion of the metal wire 70 is arranged at the top of the bulge-structure 23, when upper substrate 80
When assembling with image sensor chip 40, the upper substrate 80 is bonded in the part area of the corresponding metal wire 70 of bulge-structure 23
Domain, for example, the upper substrate 80 is plastic material, and in the top of bulge-structure 23, the subregion of corresponding metal wire 70 forms envelope
Dress glue, is bonded upper substrate 80 with metal wire 70 by packaging plastic.
Additionally, the one end on the upper substrate 80 away from described image sensor chip has one to be pressed against end 81, assembled
Cheng Zhong, is pressed against end 81 towards the metal wire 70, when upper substrate 80 and image sensor chip 40 are assembled, the pressing end 81
The extension 72 of metal wire 70 is pressed against, causes extension 72 to bend downwards, due to the good ductility of Aurum metallicum, bend process
Middle metal wire 70 keeps good electric connection so that the extension 72 and horizontal plane（The photosurface of image sensor chip）
Between in more than 10 ° of angle a, for example, in 10 ° ~ 30 ° of angle between the extension 72 and horizontal plane, and described prolong
Extending portion 72 bends in the second groove 22, so as to be suspended on the second groove 72 in.
Execution step S4, with continued reference to shown in Fig. 2 o, cleaning solution is sensed by described hole 24 into described image
Between device chip 40 and the supporting substrate 10, the ephemeral key rubber alloy 30 is removed, so as to simultaneously by supporting substrate 10 and image
Sensor chip 40 is peeled off, and removes the supporting substrate 10 so that upper substrate 80 is by metal wire 70 and described image sensor
Chip 40 forms packaging part 90, shown in structural reference Fig. 3 of packaging part 90.In the present embodiment, the organic of acetone can be adopted
Solution removes the ephemeral key rubber alloy 30.
It should be noted that having elasticity described in packaging part 90 between image sensor chip 40 and the upper substrate 80
Structure 71 so that the packaging part 90 can in the horizontal direction be translated or rotated.Packaging part 90 in the present invention is taken the photograph for formation
As head mould group, during camera module shoots, during there is shake, the elastic construction in packaging part 90 can be right
The shake of camera module is corrected, so as to realize the optical anti-vibration function of image sensor chip.
Embodiment two
Unlike embodiment one, the metal wire does not have extension away from the side of image sensor chip, removes
After the supporting substrate, image sensor chip is contacted with driver part, driver part is used to supporting and driving the figure
As the movement of sensor chip, and image sensor chip and the external circuit board are electrically connected with by driver part.
Specifically, with reference to shown in Fig. 4 a, the metal wire 70 ' includes Seed Layer 50 ' and metal level 60 ', and metal wire 70 ' is leaned on
The side of nearly image sensor chip 40 has elastic construction 71 '.Afterwards, with reference to shown in Fig. 4 b, there is provided upper substrate 80 ', will be upper
Substrate 80 ' is bonded with imageing sensor 40 by metal wire 70 ', and removes ephemeral key rubber alloy using cleaning solution, while removing
The supporting substrate, forms packaging part, and this processing step is identical with the method for embodiment one, will not be described here.Further, since golden
Category line 70 ' does not have extension, and in the present embodiment, upper substrate 80 ' can also be without with the pressing end shown in embodiment one.
Then, with reference to shown in Fig. 4 c, packaging part is connected with driver part 100, driver part 100 is used to support, drive
The movement in the horizontal direction of image sensor chip 40.With the pad of image sensor chip 40 on the driver part 100
There is pad at corresponding position（Not shown in figure）, side electricity of the metal wire 70 ' away from image sensor chip 40
Property is connected to the pad of the driver part 100.In the present embodiment, the metal wire 70 ' is electrically connected by the way of routing
The pad of driver part 100 is connected to, then, silicon hole technology can be adopted（TSV）The pad of driver part 100 is electrically connected with
Go out, and be electrically connected with using stannum ball and the external circuit board, so as to metal wire 70 ' and the external circuit board are electrically connected with.
In sum, in the method for packing of the imageing sensor that the present invention is provided, described image sensor chip is by gold
Category line is integrated with upper substrate assembling, and metal wire has elastic construction near the inner side of image sensor chip, and metal wire will scheme
As sensor chip is electrically connected with the external circuit board, the packaging part that image sensor chip is formed with upper substrate is by elasticity knot
Structure can be translated or rotated in horizontal horizontal direction, realize the optical anti-vibration function of image sensor chip.
Although the present invention is disclosed as above with preferred embodiment, it is not for limiting the present invention, any this area
Technical staff without departing from the spirit and scope of the present invention, may be by the methods and techniques content of the disclosure above to this
Bright technical scheme makes possible variation and modification, therefore, every content without departing from technical solution of the present invention, according to the present invention
Technical spirit any simple modification, equivalent variations and modification that above example is made, belong to technical solution of the present invention
Protection domain.
Claims (12)
1. a kind of method for packing of image sensor chip, it is characterised in that include：
Supporting substrate is provided, image sensor chip is bonded on the supporting substrate；
Metal wire is formed on described image sensor chip；
Upper substrate is provided, described image sensor chip is integrated with upper substrate assembling, and the metal wire is passed near image
The inner side of sensor chip has elastic construction；The metal wire is electrically connected to outside away from the side of image sensor chip；
Remove the supporting substrate and form packaging part；The packaging part can be moved in the horizontal direction.
2. the method for packing of image sensor chip according to claim 1, it is characterised in that by the packaging part and
Driver part is contacted, and the driver part is used to drive described image sensor chip level direction to move or rotate.
3. the method for packing of image sensor chip according to claim 2, it is characterised in that on the driver part with
The pad of image sensor chip has pad, side of the metal wire away from image sensor chip at corresponding position
It is electrically connected to the pad of the driver part.
4. the method for packing of image sensor chip according to claim 1, it is characterised in that the metal wire is away from figure
As the side of sensor chip has extension, the extension is outwards hanging, is suitable to be electrically connected to the external circuit board.
5. the method for packing of image sensor chip according to claim 4, it is characterised in that have on the upper substrate
One is pressed against end, and when upper substrate and image sensor chip are assembled, the pressing side pressure causes extension by the extension of metal wire
Portion is bent downwards and horizontal plane between in the angle more than 10 °.
6. the method for packing of image sensor chip according to claim 4, it is characterised in that the supporting substrate is
Bright substrate, using ephemeral key rubber alloy by described image sensor chip adhesive on the supporting substrate；The ephemeral key rubber alloy
For light-sensitive emulsion or heat-sensitive glue.
7. the method for packing of image sensor chip according to claim 6, it is characterised in that the supporting substrate away from
The one side of described image sensor chip has hole, and cleaning solution removes the ephemeral key rubber alloy by described hole.
8. the method for packing of image sensor chip according to claim 6, it is characterised in that in the transparency carrier
Surface forms the first groove, and first groove is suitable to bond described image sensor chip；
The second groove is formed in the surface of the transparency carrier, there is bulge-structure between first groove and the second groove,
Second groove is suitable to place the extension of the metal wire.
9. the method for packing of image sensor chip according to claim 8, it is characterised in that the metal line portions area
Domain is arranged at the bulge-structure top；When upper substrate and image sensor chip are assembled, the upper substrate is bonded in projection
The corresponding metal line portions region of structure.
10. the method for packing of image sensor chip according to claim 4, it is characterised in that the one of the metal wire
End is electrically connected with the pad of described image sensor chip, and the other end of the metal wire has extension, the extension
It is electrically connected with the external circuit board.
The method for packing of 11. image sensor chips according to claim 1, it is characterised in that the height of the metal wire
Width of the degree more than metal wire.
The method for packing of 12. image sensor chips according to claim 1, it is characterised in that using electroplating technology shape
Into the metal wire.
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