CN106681425A - Current square switching circuit system - Google Patents
Current square switching circuit system Download PDFInfo
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- CN106681425A CN106681425A CN201611222677.5A CN201611222677A CN106681425A CN 106681425 A CN106681425 A CN 106681425A CN 201611222677 A CN201611222677 A CN 201611222677A CN 106681425 A CN106681425 A CN 106681425A
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- field effect
- type field
- effect transistor
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a current square switching circuit system. A current square switching circuit comprises a fixed voltage generating circuit and a current square circuit; the fixed voltage generating circuit comprises a fixed voltage output end and a circuit output end, and is used for providing fixed voltage for the current square circuit; the current square circuit is connected with the fixed voltage generating circuit, and a square relationship is formed between an output current and an input circuit of the current square circuit. In the embodiment of the current square switching circuit system, the fixed voltage generating circuit is composed of two P-type field effect transistors and used for providing the fixed voltage for the current square circuit, the current square circuit is composed of three P-type field effect transistors, and finally, the current is output with a set of current mirrors. The current square switching circuit system is simple in circuit structure and small in chip area, and the standard CMOS technology is adopted.
Description
Technical field
The present invention relates to the current squaring change-over circuit technical field of chip, more particularly to a kind of current squaring change-over circuit
System.
Background technology
Variable gain amplifier (variable gain amplifier, VGA) is in the system for needing to process analogue signal
Have a wide range of applications, such as sonifer, hard disk and the communications field.Used in traditional VGA designs is audion, this be by
Voltage in audion has exponent relation with electric current, can be used to realize VGA.But in Advanced CMOS Process, voltage with
Electric current is in square, therefore VGA can not be realized as audion using CMOS transistor, while in Advanced CMOS Process
Not in offer triode device, therefore original method for designing be not suitable for, and exigence is replaced using cmos device.Solve
One of method be exactly to approach exponential function by using Taylor series, then Taylor series are intercepted, obtain one with
The close function of exponential function, then realize this function with cmos circuit.And current squaring electric current is exactly exponent circuit
Core.
The content of the invention
It is an object of the invention to overcome the deficiencies in the prior art, the invention provides a kind of current squaring change-over circuit system
System, constitutes fixed voltage and produces circuit using two p-type field effect transistor, for providing fixed voltage to current squaring circuit, makes
Current squaring circuit is constituted with three p-type field effect transistor, is finally exported in electric current with one group of current mirror, circuit structure letter of the present invention
Single, chip area is little, uses standard CMOS process.
In order to solve above-mentioned technical problem, the invention provides a kind of current squaring conversion circuitry, the electric current is put down
Square conversion circuitry includes：Fixed voltage produces circuit, current squaring circuit；Wherein,
The fixed voltage produces circuit includes fixed voltage output and circuit output end, and the fixed voltage produces electricity
Road is used to provide fixed voltage for the current squaring circuit；
The current squaring circuit produces circuit and is connected with the fixed voltage, the current squaring circuit output current
Quadratic relationship is formed with input circuit.
Preferably, the current squaring conversion circuitry also includes current mirror, the current mirror and the current squaring
Circuit is connected, for exporting the electric current that the current squaring circuit is produced.
Preferably, the current mirror includes the first N-type field effect transistor and the second N-type field effect transistor；Wherein,
The first N-type field effect transistor drain electrode is connected with the first N-type fet gate, the first N-type field
Effect pipe source electrode is connected with the current squaring circuit, and the first N-type field effect transistor substrate is connected with the supply voltage
Connect；
The second N-type field effect transistor drain electrode output circuit, the second N-type fet gate and first N-type
Fet gate is connected, and the second N-type field effect transistor substrate is connected with the supply voltage.
Preferably, the fixed voltage produces circuit includes the 4th p-type field effect transistor, the 5th p-type field effect transistor and direct current
Power supply is constituted；Wherein,
The 4th p-type field effect transistor drain electrode is connected with the 4th p-type fet gate, the 4th p-type field effect
Should pipe source electrode be connected with supply voltage, the 4th p-type field effect transistor substrate is connected with the supply voltage；
The 5th p-type field effect transistor drain electrode is connected with the 5th p-type fet gate, the 5th p-type field
Effect pipe source electrode is connected with the 4th p-type field effect transistor drain electrode, and the 5th p-type field effect transistor substrate and the power supply are electric
Pressure is connected；
Described DC source one end is connected with the 5th p-type field effect transistor drain electrode, and the other end is connected to the ground.
Preferably, the 4th p-type field effect transistor is identical with the breadth length ratio of the 5th p-type field effect transistor.
Preferably, the current squaring circuit includes the first p-type field effect transistor, the second p-type field effect transistor and the 3rd p-type field
Effect pipe；Wherein,
First p-type field effect transistor drain electrode is connected with the current mirror, the first p-type fet gate and institute
State fixed voltage generation circuit to be connected, the first p-type field effect transistor source electrode is connected with the 3rd p-type field effect transistor, a P
Type field effect transistor substrate is connected with supply voltage；
Second p-type field effect transistor drain electrode is connected with the current mirror, the second p-type fet gate and described the
Three p-type fet gates are connected, and the second p-type field effect transistor source electrode is connected with supply voltage；
3rd p-type field effect transistor drain electrode be connected with the 3rd p-type fet gate, the 3rd p-type field effect transistor source electrode and
Supply voltage is connected, and the 3rd p-type field effect transistor substrate is connected with supply voltage.
In the embodiment of the present invention, the 4th p-type field effect transistor, the 5th p-type field effect transistor and DC source are used to produce fixation
Voltage V2, V2 are exported from the 5th p-type fet gate, and DC current source is provided by other circuits in system；Imitate the first p-type field
Ying Guan, the second p-type field effect transistor and the 3rd p-type field effect transistor constitute current squaring circuit, and the first p-type field effect transistor produces electric current
I11, the second p-type field effect transistor produces electric current I12, and the difference of I11 and I12 is equal to input current Iin, I11 and I12 sums and Iin
With quadratic relationship, so the output current of current squaring circuit and its input current have quadratic relationship；First N-type field effect
Pipe and the second N-type field effect transistor constitute current output circuit, and the first N-type field effect transistor and the second N-type field effect transistor constitute electric current
Mirror, output circuit is exported from the drain electrode of the second N-type field effect transistor；Circuit structure of the present invention is simple, and chip area is little, uses mark
Quasi- CMOS technology.
Description of the drawings
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
The accompanying drawing to be used needed for having technology description is briefly described, it is clear that, drawings in the following description are only this
Some embodiments of invention, for those of ordinary skill in the art, on the premise of not paying creative work, can be with
Other accompanying drawings are obtained according to these accompanying drawings.
Fig. 1 is the structural representation of the current squaring conversion circuitry in the embodiment of the present invention；
Fig. 2 is the structural representation that the fixed voltage in the embodiment of the present invention produces circuit；
Fig. 3 is the structural representation of the current squaring circuit in the embodiment of the present invention.
Specific embodiment
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than the embodiment of whole.It is based on
Embodiment in the present invention, it is all other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Fig. 1 is the structural representation of the current squaring conversion circuitry in the embodiment of the present invention, as shown in figure 1, described
Current squaring conversion circuitry includes：Fixed voltage produces circuit, current squaring circuit；Wherein,
The fixed voltage produces circuit includes fixed voltage output and circuit output end, and the fixed voltage produces electricity
Road is used to provide fixed voltage for the current squaring circuit；
The current squaring circuit produces circuit and is connected with the fixed voltage, the current squaring circuit output current
Quadratic relationship is formed with input circuit.
Preferably, the current squaring conversion circuitry also includes current mirror, and the current mirror is flat with the electric current
Square circuit is connected, for exporting the electric current that the current squaring circuit is produced.
Preferably, the current mirror includes the first N-type field effect transistor N11 and the second N-type field effect transistor N12；Wherein,
The first N-type field effect transistor N11 drain electrode is connected with the first N-type field effect transistor N11 grid, and described first
N-type field effect transistor N11 source electrode is connected with the current squaring circuit, the first N-type field effect transistor N11 substrate and the electricity
Source voltage is connected；
Second N-type field effect transistor N12 drains output circuit, the second N-type field effect transistor N12 grid and described the
One N-type field effect transistor N11 grid is connected, and the second N-type field effect transistor N12 substrate is connected with the supply voltage.
Preferably, the fixed voltage produces circuit includes the 4th p-type field effect transistor P14, the 5th p-type field effect transistor P15
With DC source composition；Wherein,
The 4th p-type field effect transistor P14 drain electrode is connected with the 4th p-type field effect transistor P14 grid, the 4th P
Type field effect transistor P14 source electrode is connected with supply voltage, and the 4th p-type field effect transistor P14 substrate is connected with the supply voltage；
The 5th p-type field effect transistor drain electrode is connected with the 5th p-type field effect transistor P15 grid, the 5th p-type
Field effect transistor P15 source electrode is connected with the 4th p-type field effect transistor P14 drain electrode, the 5th p-type field effect transistor P15 substrate
It is connected with the supply voltage；
Described DC source one end is connected with the 5th p-type field effect transistor P15 drain electrode, and the other end is connected to the ground.
Preferably, the 4th p-type field effect transistor P14 is identical with the breadth length ratio of the 5th p-type field effect transistor P15.
Fig. 2 is the structural representation that the fixed voltage in the embodiment of the present invention produces circuit, with reference to Fig. 2, to fixed voltage
Produce circuit to be described further：
The calculating process of fixed voltage given below, the V in formula belowaAnd VbThe 4th p-type field effect transistor is represented respectively
Voltage difference between P14 and the 5th p-type field effect transistor P15 gate-source, electric current I0Fixed DC current is made, by its in system
He provides circuit, wherein, the breadth length ratio of the 4th p-type field effect transistor P14 and the 5th p-type field effect transistor P15 is identical；Computing formula is such as
Under：
At the same time it can also obtain I0Expression formula,
Preferably, the current squaring circuit includes the first p-type field effect transistor P11, the second p-type field effect transistor P12 and the
Three p-type field effect transistor P13；Wherein,
The first p-type field effect transistor P11 drain electrode is connected with the current mirror, the first p-type field effect transistor P11 grid
Pole and the fixed voltage produce circuit and are connected, the first p-type field effect transistor P11 source electrode and the 3rd p-type field effect transistor P13
It is connected, the first p-type field effect transistor P11 substrate is connected with supply voltage；
Second p-type field effect transistor P12 drain electrode is connected with the current mirror, the second p-type field effect transistor P12 grid with
The 3rd p-type field effect transistor P13 grid is connected, and the second p-type field effect transistor P12 source electrode is connected with supply voltage；
The drain electrode of 3rd p-type field effect transistor P13 is connected with the 3rd p-type field effect transistor P13 grid, the 3rd p-type field effect transistor
P13 source electrodes are connected with supply voltage, and the 3rd p-type field effect transistor P13 substrate is connected with supply voltage.
Fig. 3 is the structural representation of the current squaring circuit in the embodiment of the present invention, with reference to Fig. 3, above-mentioned steps are made into
One step explanation：
Current squaring circuit counting process is given below：Assume VaAnd VbThe first p-type field effect transistor P11 and are represented respectively
Voltage difference between two p-type field effect transistor P12 grids and source electrode, V2Represent the first p-type field effect transistor P11 grid and source voltage
Difference, then have：
V2=Va+Vb
According to saturation region current formula, the electric current I in the first p-type field effect transistor P1111In the second p-type field effect transistor P12
Electric current I12It is expressed as：
Order
Again because I11-I12=Iin, substituting into above formula can obtain：
According to I0With V2Relation, orderFurther simplify I11+I12：
I11+I12The output current of indication circuit, from above formula circuit output current and input current I can be seeninWith flat
Square relation.
Aforementioned p-type field effect transistor refers to p-type Metal-oxide-semicondutor (P-Mental-Oxide-
Semiconductor, PMOS) transistor, each PMOS transistor include four pins, i.e. drain D, source S, substrate, grid
G。
Above-mentioned N-type field effect transistor be N-type Metal-oxide-semicondutor (N-Mental-Oxide-Semiconductor,
NMOS) transistor, each nmos pass transistor includes four pins, i.e. drain D, source S, substrate, grid G.
In the embodiment of the present invention, the 4th p-type field effect transistor, the 5th p-type field effect transistor and DC source are used to produce fixation
Voltage V2, V2 are exported from the 5th p-type fet gate, and DC current source is provided by other circuits in system；Imitate the first p-type field
Ying Guan, the second p-type field effect transistor and the 3rd p-type field effect transistor constitute current squaring circuit, and the first p-type field effect transistor produces electric current
I11, the second p-type field effect transistor produces electric current I12, and the difference of I11 and I12 is equal to input current Iin, I11 and I12 sums and Iin
With quadratic relationship, so the output current of current squaring circuit and its input current have quadratic relationship；First N-type field effect
Pipe and the second N-type field effect transistor constitute current output circuit, and the first N-type field effect transistor and the second N-type field effect transistor constitute electric current
Mirror, output circuit is exported from the drain electrode of the second N-type field effect transistor；Circuit structure of the present invention is simple, and chip area is little, uses mark
Quasi- CMOS technology.
One of ordinary skill in the art will appreciate that all or part of step in the various methods of above-described embodiment is can
Completed with instructing the hardware of correlation by program, the program can be stored in a computer-readable recording medium, storage
Medium can include：Read only memory (ROM, Read Only Memory), random access memory (RAM, Random
Access Memory), disk or CD etc..
In addition, a kind of current squaring conversion circuitry for being provided the embodiment of the present invention above has carried out detailed Jie
Continue, specific case should be employed herein the principle and embodiment of the present invention are set forth, the explanation of above example
It is only intended to help and understands the method for the present invention and its core concept；Simultaneously for one of ordinary skill in the art, according to this
The thought of invention, will change in specific embodiments and applications, and in sum, this specification content should not
It is interpreted as limitation of the present invention.
Claims (6)
1. a kind of current squaring conversion circuitry, it is characterised in that the current squaring conversion circuitry includes：Fixed electricity
Pressure produces circuit, current squaring circuit；Wherein,
The fixed voltage produces circuit includes fixed voltage output and circuit output end, and the fixed voltage produces circuit and uses
In providing fixed voltage for the current squaring circuit；
The current squaring circuit and the fixed voltage produce circuit and are connected, the current squaring circuit output current with it is defeated
Enter circuit and form quadratic relationship.
2. current squaring conversion circuitry according to claim 1, it is characterised in that the current squaring change-over circuit
System also includes current mirror, and the current mirror is connected with the current squaring circuit, for exporting the current squaring circuit
The electric current of generation.
3. current squaring conversion circuitry according to claim 2, it is characterised in that the current mirror includes a N
Type field effect transistor and the second N-type field effect transistor；Wherein,
The first N-type field effect transistor drain electrode is connected with the first N-type fet gate, the first N-type field effect
Pipe source electrode is connected with the current squaring circuit, and the first N-type field effect transistor substrate is connected with the supply voltage；
The second N-type field effect transistor drain electrode output circuit, the second N-type fet gate is imitated with the first N-type field
Tube grid is answered to be connected, the second N-type field effect transistor substrate is connected with the supply voltage.
4. current squaring conversion circuitry according to claim 1, it is characterised in that the fixed voltage produces circuit
Including the 4th p-type field effect transistor, the 5th p-type field effect transistor and DC source composition；Wherein,
The 4th p-type field effect transistor drain electrode is connected with the 4th p-type fet gate, the 4th p-type field effect transistor
Source electrode is connected with supply voltage, and the 4th p-type field effect transistor substrate is connected with the supply voltage；
The 5th p-type field effect transistor drain electrode is connected with the 5th p-type fet gate, the 5th p-type field effect
The drain electrode of pipe source electrode and the 4th p-type field effect transistor is connected, the 5th p-type field effect transistor substrate and the supply voltage phase
Connection；
Described DC source one end is connected with the 5th p-type field effect transistor drain electrode, and the other end is connected to the ground.
5. current squaring conversion circuitry according to claim 4, it is characterised in that the 4th p-type field effect transistor
It is identical with the breadth length ratio of the 5th p-type field effect transistor.
6. current squaring conversion circuitry according to claim 1, it is characterised in that the current squaring circuit includes
First p-type field effect transistor, the second p-type field effect transistor and the 3rd p-type field effect transistor；Wherein,
The first p-type field effect transistor drain electrode is connected with the current mirror, and the first p-type fet gate is solid with described
Determine voltage generation circuit to be connected, the first p-type field effect transistor source electrode is connected with the 3rd p-type field effect transistor, the first p-type field
Effect tube lining bottom is connected with supply voltage；
Second p-type field effect transistor drain electrode is connected with the current mirror, the second p-type fet gate and the 3rd P
Type fet gate is connected, and the second p-type field effect transistor source electrode is connected with supply voltage；
The drain electrode of 3rd p-type field effect transistor is connected with the 3rd p-type fet gate, the 3rd p-type field effect transistor source electrode and power supply
Voltage is connected, and the 3rd p-type field effect transistor substrate is connected with supply voltage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611222677.5A CN106681425A (en) | 2016-12-27 | 2016-12-27 | Current square switching circuit system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611222677.5A CN106681425A (en) | 2016-12-27 | 2016-12-27 | Current square switching circuit system |
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| Publication Number | Publication Date |
|---|---|
| CN106681425A true CN106681425A (en) | 2017-05-17 |
Family
ID=58870667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611222677.5A Pending CN106681425A (en) | 2016-12-27 | 2016-12-27 | Current square switching circuit system |
Country Status (1)
| Country | Link |
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| CN (1) | CN106681425A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113778166A (en) * | 2021-09-28 | 2021-12-10 | 电子科技大学 | Voltage differential circuit with ultra-low power consumption |
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| CN104035470A (en) * | 2014-06-19 | 2014-09-10 | 电子科技大学 | Low-temperature-offset-coefficient bandgap reference voltage generation circuit |
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2016
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| CN1987713A (en) * | 2005-12-23 | 2007-06-27 | 深圳市芯海科技有限公司 | Reference voltage source for low temperature coefficient with gap |
| WO2009023719A2 (en) * | 2007-08-14 | 2009-02-19 | Texas Instruments Incorporated | Square-function circuit |
| CN102820856A (en) * | 2009-02-03 | 2012-12-12 | 瑞萨电子株式会社 | RF power amplifier and RF power module using the same |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113778166A (en) * | 2021-09-28 | 2021-12-10 | 电子科技大学 | Voltage differential circuit with ultra-low power consumption |
| CN113778166B (en) * | 2021-09-28 | 2022-10-04 | 电子科技大学 | Voltage differential circuit with ultra-low power consumption |
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Application publication date: 20170517 |