CN106680538A - Solid state barrier contact type constant force feedback ultra-stable scanning tunneling spectroscopy testing method - Google Patents
Solid state barrier contact type constant force feedback ultra-stable scanning tunneling spectroscopy testing method Download PDFInfo
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- CN106680538A CN106680538A CN201710142812.3A CN201710142812A CN106680538A CN 106680538 A CN106680538 A CN 106680538A CN 201710142812 A CN201710142812 A CN 201710142812A CN 106680538 A CN106680538 A CN 106680538A
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- scanning tunnel
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- 238000012360 testing method Methods 0.000 title claims abstract description 51
- 230000004888 barrier function Effects 0.000 title claims abstract description 25
- 238000002416 scanning tunnelling spectroscopy Methods 0.000 title abstract description 6
- 239000007787 solid Substances 0.000 title abstract description 4
- 239000000523 sample Substances 0.000 claims abstract description 44
- 238000000034 method Methods 0.000 claims abstract description 3
- 238000005036 potential barrier Methods 0.000 claims description 38
- 238000001228 spectrum Methods 0.000 claims description 37
- 230000006698 induction Effects 0.000 claims description 15
- 238000010998 test method Methods 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000003792 electrolyte Substances 0.000 claims description 6
- 229920001971 elastomer Polymers 0.000 claims description 4
- 239000000806 elastomer Substances 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910003460 diamond Inorganic materials 0.000 claims description 3
- 239000010432 diamond Substances 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000012423 maintenance Methods 0.000 claims description 2
- 230000005641 tunneling Effects 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005070 sampling Methods 0.000 abstract 5
- 230000003252 repetitive effect Effects 0.000 abstract 1
- 208000011317 telomere syndrome Diseases 0.000 description 19
- 230000000694 effects Effects 0.000 description 6
- 239000007788 liquid Substances 0.000 description 6
- 239000012528 membrane Substances 0.000 description 5
- 239000010408 film Substances 0.000 description 4
- 230000035939 shock Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 238000003795 desorption Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000013016 damping Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000005057 refrigeration Methods 0.000 description 2
- -1 5th Substances 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/10—STM [Scanning Tunnelling Microscopy] or apparatus therefor, e.g. STM probes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/10—STM [Scanning Tunnelling Microscopy] or apparatus therefor, e.g. STM probes
- G01Q60/14—STP [Scanning Tunnelling Potentiometry]
Abstract
The invention discloses a solid state barrier contact type constant force feedback ultra-stable scanning tunneling spectroscopy testing method, which belongs to the technical field of a scanning tunneling spectroscopy testing device. The technical schemes of the invention are as follows. A solid state barrier is arranged between a conductive needle tip and a to-be-tested sampling product and a force contact state exists between the needle tip and the to-be-tested sampling product. One end of the conductive needle tip is fixed on a force sensor. The signal output end of the force sensor is connected with the input end of a PID controller through a comparison amplifier; the output end of the PID controller is connected with a sampling product station or/and the driving module of the probe station to keep the output signal of the force sensor stable. The to-be-tested sampling product and the electrodes of the conductive needle tip are all connected to the STS testing module to realize the scanning tunneling spectroscopy testing to the to-be-tested sampling product under the constant force feedback mode. The scanning tunneling spectroscopy obtained from the method is stable, highly repetitive and achieves highly precise data.
Description
Technical field
The invention belongs to scanning tunnel spectrum test device technical field, and in particular to a kind of solid-state barrier contact formula constant force is anti-
Present overstable scanning tunnel spectrum method of testing.
Background technology
The scanning-tunnelling spectroscopy developed by STM（STS）Huge effect, such as i-v spectrums, di/dv are increasingly given play to
Spectrum, d2i/dv2The measurement of spectrum, i-z spectrums or i-t spectrums, in vibrational state, electronic state and the context of detection of property such as transports.But STS is composed
Test has that many interference factors, stability difference and repeatability are poor, and the development of STS is annoying always.Cause be not
Each can realize that the group of atom definition STM images can do STS tests, greatly hinder the development of nanosecond science and technology.
At present, STS tests are difficult to ensure that the long-time stability of barrier width, are mainly reflected in following two aspects：
（1）Due to extraneous various interference factors, the interference for mainly shaking, either needle point is caused to be tied with the vacuum of sample room
Or the liquid barrier junction of electrochemistry STM, all easily fluctuates.And the fluctuation of 0.1nm causes about 10 times of exporting change, make
Obtain STS and be difficult to high precision measurement.
This also proposes very high requirement to damping.Low temperature only has a little positive tribute in terms of molecular thermalmotion is reduced
Offer, but be on the contrary to play negative effect to the stability of tunnel knot spacing, such as obtaining low temperature needs cryogenic liquid or refrigeration
Machine, the evaporation of cryogenic liquid, the vibrations of refrigeration machine are all unfavorable to the stability of tunnel knot, and negative impact is become on the contrary, aggravate
The burden of damping.
（2）The absorption of gas molecule and desorption, also can all affect the characteristic of tunnel knot on the rotten or needle point of needle point, lead
The noise increase of measurement data, such case is caused to optimize by ultrahigh vacuum or modified tips.
To solve an above-mentioned difficult problem, it is in project approval number：11304082 state natural sciences fund " supper-fast scanning tunnel
Under the support of the microscopical improvement in road and application ", this patent proposes a kind of solid-state barrier contact formula constant force and feeds back overstable sweeping
Retouch Tunnel Spectra tester.
The content of the invention
The invention provides a kind of shock resistance is strong and can be effective against the solid-state barrier contact formula constant force of external interference anti-
Present overstable scanning tunnel spectrum method of testing.
The present invention adopts the following technical scheme that solid-state barrier contact formula constant force feedback is overstable to solve above-mentioned technical problem
Scanning tunnel spectrum（STS）Method of testing, including system of Scanning Tunneling Microscope, testing sample, PID controller and STS test mould
Block, it is characterised in that：Solid-state potential barrier, and needle point and solid-state potential barrier and testing sample are provided between conductive pinpoint and testing sample
Between be power contact condition, the other end of conductive pinpoint is fixed on power induction apparatuss, the signal output part of power induction apparatuss by than
It is connected with the input of PID controller compared with amplifier, outfan and sample stage or/and the driving mould of probe station of PID controller
Block is connected, and the output signal for maintenance energy induction apparatuss is constant, and the electrode of testing sample and conductive pinpoint is all connected to STS tests
Module, for realizing that the scanning tunnel spectrum to testing sample is tested under constant force feedback model.
Further preferably, described power induction apparatuss are pressure resistance type conduction needle body, piezoelectric type conduction needle body or light is reflective leads
Acusector body.
Further preferably, corresponding comparison amplifier is electric bridge amplification when described power induction apparatuss are pressure resistance type conduction needle body
Device；Corresponding comparison amplifier is voltage amplifier when described power induction apparatuss are piezoelectric type conduction needle body；Described power sensing
Corresponding comparison amplifier is photodetector when device is light reflective conductive needle body.
Further preferably, described solid-state potential barrier is arranged on conductive pinpoint or/and on testing sample or for conductive pin
The interface that point is formed with testing sample.
Further preferably, the structure of conductive needle body is elastomer structure in described power induction apparatuss.
Further preferably, described elastomer structure is micro cantilever structure, zigzag spring structure or helical spring knot
Structure.
Further preferably, described solid-state potential barrier material is electrolyte.
Further preferably, described electrolyte is silicon dioxide, silicon nitride, sapphire or diamond.
The present invention has advantages below：Shock resistance is strong, especially solid-state potential barrier conductive pinpoint and conductive pinpoint with treat test sample
When product Elastic Contact is used in conjunction with, the following aspects is embodied in.
1st, when extraneous interference causes conductive pinpoint near testing sample, due to the coefficient of stiffiness k of solid-state potential barrier it is very high,
The significantly larger than k value of gaseous state or liquid（If the algorithm according to k value introduces k value to gas and liquid）, it is less
Power will make gaseous state or liquid potential barrier that great deformation occurs, and solid-state potential barrier hardness, intensity are larger, and deformation can be front with minimum
Barrier width afterwards between STS tests twice is nearly identical, greatly enhances repeatability.Therefore, solid-state potential barrier is anti-
Pinking is greatly improved, and the stability of STS signals is greatly enhanced.
2nd, under solid-state barrier contact, original exposed conductive pinpoint is wrapped up by electrolyte, is completely cut off with outside air, therefore
（1）It is oxidized probability that is rotten and changing barrier height and width to substantially reduce；（2）Between solid-state potential barrier and testing sample
Contact so that be also difficult to change potential barrier with desorption with the absorption of desorption, i.e. gas molecule without space supplied gas Molecular Adsorption
Height and width.Therefore, even if testing under atmospheric environment, also it is unlikely to affect test result；So that high vacuum environment must
The property wanted, the necessity of modified tips are also reduced by, and the stability of STS signals is greatly enhanced.
3rd, due to the elastic needle body that K values can be selected relatively small, therefore, even if in the case of solid-state potential barrier, it is conductive
Needle point is also unlikely to pierce bad sample, and solid-state potential barrier is also unlikely to be subject to crushing.
4th, micro-cantilever needle body is with certain Bending Deformation（Such as 1nm）Solid-state potential barrier needle point is set to be pressed in conductive sample with elastic force
Product surface, during when external interference so that needle point is away from sample, as long as external shock without result in needle point and sample it is larger away from
（Such as away from 0.5nm）, then the result of STS tests will be barely affected, therefore, shock resistance is greatly improved, STS test signals
Stability greatly enhance.
When the 5th, testing STS, potential barrier is set to tie up with counteracting force with the active force of sample room using permanent contact force feedback model
Hold constant, can eliminate due to pressure effect it is different caused by potential barrier change, such as piezoelectric effect, piezoresistive effect, more favorably
In the stability of potential barrier.
Description of the drawings
Fig. 1 is that the reflection laser formula solid-state barrier contact formula constant force that solid-state potential barrier is arranged on needle point feeds back overstable scanning tunnel
Compose the structural representation of tester in road；
Fig. 2 is that the piezoelectricity or pressure drag pattern solid-state barrier contact formula constant force that solid-state potential barrier is arranged on needle point feeds back overstable scanning tunnel
Compose the structural representation of tester in road.
In figure：1st, the conduction of the micro-cantilever with reflective membrane needle body, 2, conductive pinpoint, 3, solid-state potential barrier, 4, testing sample,
5th, sample stage, 6, probe station, 7, STS test modules, 8, comparison amplifier, 9, PID controller, 10, light source, 11, photodetection
Device, 12, piezoelectricity or piezoresistance type microcantilever beam conduction needle body.
Specific embodiment
The particular content of the present invention is described in detail with reference to accompanying drawing.
Embodiment 1
The reflection laser pattern solid-state barrier contact formula constant force that solid-state potential barrier is arranged on needle point feeds back overstable scanning tunnel spectrum survey
Examination instrument
As shown in figure 1, being fixed with conductive pinpoint 2 on the conduction needle body 1 of the micro-cantilever with reflective membrane, set on conductive pinpoint 2
There is solid-state potential barrier 3, and solid-state potential barrier 3 is tested in the way of contact measured sample 4, the electrode of testing sample 4 and conductive pinpoint 2
STS test modules 7 are accessed, the reflective membrane of the light Jing that light source 10 the is launched conduction needle bodies 1 of the micro-cantilever with reflective membrane is anti-
The signal of telecommunication is received and converted to by photodetector 11 after penetrating, the signal of telecommunication accesses the comparison amplifier 8 that can arrange reference value, than
Compared with the reference value in amplifier 8 according to the power between desired solid-state potential barrier 3 and testing sample 4 depending on, comparison amplifier 8 it is defeated
Go out to be linked into PID controller 9, the output control probe station 6 or sample stage 5 of PID controller 9, the output for making PID controller 9 is believed
Number being intended to zero makes in other words the output signal of photodetector 11 be constant value.The material of solid-state potential barrier 3 is electrolyte, such as
Silicon dioxide, silicon nitride, sapphire or diamond.
Scanning tunnel spectrum stability height, the repeatable high and data precision height obtained under the pattern.Scanning tunnel spectrum bag
Include i-v spectrums, di/dv spectrums, d2i/dv2, i-z spectrum or i-t spectrum, the parameter being arranged as required in STS test modules 7.
Embodiment 2
The piezoelectricity or pressure drag pattern solid-state barrier contact formula constant force that solid-state potential barrier is arranged on needle point feeds back overstable scanning tunnel spectrum
Tester
As shown in Fig. 2 to reduce impact of the heat effect of laser to testing, can be by the conduction needle body of the micro-cantilever with reflective membrane
1 is changed to pressure drag or piezoelectric type micro-cantilever conduction needle body 12, the such as patent of Application No. CN201610624180.X《Have on needle point
The potential barrier probe of solid dielectric thin film》In accompanying drawing 7 and accompanying drawing 8 shown in, pressure drag or piezoelectric type micro-cantilever conduction needle body
Draw both threads on 12 resistance or voltage are linked in comparison amplifier 8.When pressure drag or piezoelectric type micro-cantilever conduction needle body
12 be piezoelectric principle when, comparison amplifier 8 be voltage amplifier, reference value therein according to desired solid-state potential barrier 3 with it is to be measured
Depending on power between sample 4.When pressure drag or piezoelectric type micro-cantilever conduction needle body 12 are piezoresistive principles, comparison amplifier 8 is
Amplifier of electrical bridge, depending on reference value therein is according to the power between desired solid-state potential barrier 3 and testing sample 4.
Scanning tunnel spectrum stability height, the repeatable high and data precision height obtained under the pattern.Scanning tunnel spectrum bag
Include i-v spectrums, di/dv spectrums, d2i/dv2, i-z spectrum or i-t spectrum, the parameter being arranged as required in STS test modules 7.
Embodiment 3
In embodiment 1 and embodiment 2, the solid-state potential barrier being arranged on needle point is changed to be arranged on testing sample 4.From current
Film preparing technology from the point of view of, area be typically much deeper than deposition film on the sample of needle point difficulty can be less than on needle point sink
The potential barrier of product film like.Then, remaining method of testing is constant.
The embodiment has the advantage same with embodiment 1 and embodiment 2, and technical difficulty can be lower.Having the disadvantage will
Surface for each testing sample 4 prepares dielectric film solid-state potential barrier 3 and different testing samples 4 may may require that difference
The solid-state potential barrier 3 of material.
Embodiment 4
In embodiment 1 and embodiment 2, it is also possible to which the interface potential barrier that conductive pinpoint 2 is formed with testing sample 4 is used as solid-state gesture
Build.Operationally, difficulty is minimum, but is only applicable to the part specific sample under specified conditions, and range of application is relatively limited for the method.
Have been shown and described above the ultimate principle of the present invention, principal character and advantage, without departing from spirit of the invention and
On the premise of scope, the present invention also has various changes and modifications, and these changes and improvements both fall within claimed invention
Scope.
Claims (8)
- The 1. overstable scanning tunnel spectrum method of testing of solid-state barrier contact formula constant force feedback, including system of Scanning Tunneling Microscope, Testing sample, PID controller and scanning tunnel spectrum test module, it is characterised in that：Arrange between conductive pinpoint and testing sample It is power contact condition to have between solid-state potential barrier, and needle point and solid-state potential barrier and testing sample, and the other end of conductive pinpoint is fixed on On power induction apparatuss, the signal output part of power induction apparatuss is connected by comparison amplifier with the input of PID controller, PID control The outfan of device is connected with the drive module of sample stage or/and probe station, and the output signal for maintenance energy induction apparatuss is constant, treats The electrode of test sample product and conductive pinpoint is all connected to scanning tunnel spectrum test module, for realizing treating under constant force feedback model The scanning tunnel spectrum test of test sample product.
- 2. solid-state barrier contact formula constant force according to claim 1 feeds back overstable scanning tunnel spectrum method of testing, and it is special Levy and be：Described power induction apparatuss are pressure resistance type conduction needle body, piezoelectric type conduction needle body or the reflective conductive needle body of light.
- 3. solid-state barrier contact formula constant force according to claim 1 feeds back overstable scanning tunnel spectrum method of testing, and it is special Levy and be：Corresponding comparison amplifier is amplifier of electrical bridge when described power induction apparatuss are pressure resistance type conduction needle body；Described power Corresponding comparison amplifier is voltage amplifier when induction apparatuss are piezoelectric type conduction needle body；Described power induction apparatuss are that light is reflective Corresponding comparison amplifier is photodetector during conductive needle body.
- 4. solid-state barrier contact formula constant force according to claim 1 feeds back overstable scanning tunnel spectrum method of testing, and it is special Levy and be：Described solid-state potential barrier is arranged on conductive pinpoint or/and on testing sample or for conductive pinpoint and testing sample The interface of formation.
- 5. the solid-state barrier contact formula constant force according to any one in claim 1-3 is fed back overstable scanning tunnel spectrum and is surveyed Method for testing, it is characterised in that：The structure of conductive needle body is elastomer structure in described power induction apparatuss.
- 6. solid-state barrier contact formula constant force according to claim 5 feeds back overstable scanning tunnel spectrum method of testing, and it is special Levy and be：Described elastomer structure is micro cantilever structure, zigzag spring structure or helical spring structure.
- 7. solid-state barrier contact formula constant force according to claim 1 feeds back overstable scanning tunnel spectrum method of testing, and it is special Levy and be：Described solid-state potential barrier material is electrolyte.
- 8. solid-state barrier contact formula constant force according to claim 7 feeds back overstable scanning tunnel spectrum method of testing, and it is special Levy and be：Described electrolyte is silicon dioxide, silicon nitride, sapphire or diamond.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710142812.3A CN106680538A (en) | 2017-03-10 | 2017-03-10 | Solid state barrier contact type constant force feedback ultra-stable scanning tunneling spectroscopy testing method |
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| CN201710142812.3A CN106680538A (en) | 2017-03-10 | 2017-03-10 | Solid state barrier contact type constant force feedback ultra-stable scanning tunneling spectroscopy testing method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111157767A (en) * | 2020-01-14 | 2020-05-15 | 上海新克信息技术咨询有限公司 | Scanning probe and preparation method thereof |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106226560A (en) * | 2016-08-02 | 2016-12-14 | 河南师范大学 | The PSTM of solid-state potential barrier needle point contact mode |
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2017
- 2017-03-10 CN CN201710142812.3A patent/CN106680538A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106226560A (en) * | 2016-08-02 | 2016-12-14 | 河南师范大学 | The PSTM of solid-state potential barrier needle point contact mode |
Non-Patent Citations (1)
| Title |
|---|
| 张联盟 等: "《材料科学基础》", 31 August 2004, 武汉理工大学出版社, pages: 235 - 237 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111157767A (en) * | 2020-01-14 | 2020-05-15 | 上海新克信息技术咨询有限公司 | Scanning probe and preparation method thereof |
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