CN106653262A - Regulation and control method for Skyrmion in hexagonal MnNiGa - Google Patents

Regulation and control method for Skyrmion in hexagonal MnNiGa Download PDF

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Publication number
CN106653262A
CN106653262A CN201610938945.7A CN201610938945A CN106653262A CN 106653262 A CN106653262 A CN 106653262A CN 201610938945 A CN201610938945 A CN 201610938945A CN 106653262 A CN106653262 A CN 106653262A
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skyrmion
hexagonal
mnniga
magnetic field
regulation
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CN106653262B (en
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张颖
彭丽聪
王文洪
吴光恒
蔡建旺
沈保根
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Institute of Physics of CAS
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/0036—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity
    • H01F1/009—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties showing low dimensional magnetism, i.e. spin rearrangements due to a restriction of dimensions, e.g. showing giant magnetoresistivity bidimensional, e.g. nanoscale period nanomagnet arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F13/00—Apparatus or processes for magnetising or demagnetising

Abstract

The invention provides a regulation and control method for a Skyrmion in a hexagonal MnNiGa. The regulation and control method comprises the following steps of 1) applying a magnetic field to the hexagonal MnNiGa, wherein the magnetic field is not strong enough to convert a strip-shaped magnetic domain in the hexagonal MnNiGa into the Skyrmion; and the direction of the magnetic field is not parallel to a family of crystal plane [001] in the hexagonal MnNiGa; and 2) applying a current to or/and heating the hexagonal MnNiGa to enable the strip-shaped magnetic domain to disappear. By virtue of the regulation and control method, a high-density Skyrmion array is formed in the hexagonal MnNiGa material system; and in addition, the high-density Skyrmion can exist in both of a null field and a wide-temperature-range room temperature.

Description

The regulation and control method of the Skyrmion in hexagonal MnNiGa
Technical field
The present invention relates to the regulation and control method of Skyrmion, and in particular to a kind of regulation and control of the Skyrmion in hexagonal MnNiGa Method.
Background technology
Magnetic Skyrmion (Skyrmion) is a kind of magnetic structure with topological behavior.It has particle properties, and chi It is very little for nanometer scale (10-100 nanometers).The spin alignment of magnetic Skyrmion causes the electric current for driving Skyrmion state change Density ratio drives the low 5-6 magnitude of traditional magnetic domain, therefore is expected to be applied to high density, high speed, low energy consumption magnetic information-storing device In part.
Skyrmion has been observed directly currently with Lorentz transmission electron microscope in non-centrosymmetric structure material system Formation.Although highdensity Skyrmion dot matrix can be formed in these materials, however it is necessary that lasting magnetic field is stabilizing it Exist, and the Curie temperature of these materials is less than room temperature, and Skyrmion is narrower (several only near Curie temperature into phase warm area Stable existence in the range of K).
In Central Symmetry La1.4Sr1.6Mn2O7In material system, it was observed that a kind of topological Numbers be 2 Skyrmion dot matrix, But remain a need in a low temperature of 70K stable existence and warm area is narrower.
We have found that the Skyrmion that can form that topological Numbers are 2 in MnNiGa material systems, although it is in 100K-340K Wider warm area is all present, but very low away from Curie temperature (such as when in room temperature) density, it is impossible to realize that high density is stored.And When magnetic field cancels, the Skyrmion for being formed can disappear, not with null field stability.
Therefore, need a kind of regulation and control method to enable the Skyrmion to be formed to be used for non-volatile high density magnetic at present to deposit In memory device.
The content of the invention
For the above-mentioned technical problem that prior art is present, The embodiment provides in a kind of hexagonal MnNiGa The regulation and control method of Skyrmion, comprises the steps：
1) magnetic field is applied to hexagonal MnNiGa, wherein the magnetic field is insufficient for the strip magnetic in hexagonal MnNiGa Farmland is changed into Skyrmion, { 001 } family of crystal planes of not parallel hexagonal MnNiGa in direction in the magnetic field；
2) applying electric current or/and heating to hexagonal MnNiGa makes its strip magnetic domain disappear.
Preferably, also including step 3)：By the current reduction it is zero or/and reduces the temperature of hexagonal MnNiGa For room temperature.
Preferably, also including step 4)：By magnetic field revocation.
Preferably, { 001 } family of crystal planes of the magnetic field perpendicular to hexagonal MnNiGa.
Preferably, the magnetic induction intensity in the magnetic field is 5mT-110mT.It is furthermore preferred that the magnetic induction intensity in the magnetic field For 30mT-80mT.
Preferably, in the step 2) in, current density is at least 8.4 × 10 in the face of the electric current7A/m2。
Preferably, in the step 2) in, the temperature of hexagonal MnNiGa is room temperature.
Preferably, in the step 2) in, hexagonal MnNiGa is heated into 350K-380K.
Skyrmion density in the regulation and control method energy Effective Regulation hexagonal MnNiGa material system of the present invention, and define Highdensity Skyrmion array, and highdensity Skyrmion can stable existence under null field and wide temperature range room temperature.
Description of the drawings
Referring to the drawings embodiments of the present invention is further illustrated, wherein：
Fig. 1 is the domain structure figure of the Skyrmion that the 1st embodiment of the invention is formed.
Fig. 2 is the domain structure figure of the Skyrmion that the 2nd embodiment of the invention is formed.
Fig. 3 is the domain structure figure of the Skyrmion that the 3rd embodiment of the invention is formed.
Fig. 4 is the domain structure figure of the Skyrmion that the 4th embodiment of the invention is formed.
Fig. 5 is the domain structure figure of the Skyrmion that the 5th embodiment of the invention is formed.
Fig. 6 is the domain structure figure of the Skyrmion that the 6th embodiment of the invention is formed.
Fig. 7 is the domain structure figure of the Skyrmion that the 7th embodiment of the invention is formed.
Fig. 8 is the domain structure figure of the Skyrmion that the 8th embodiment of the invention is formed.
Fig. 9-11 is the Skyrmion that formed of the 9th embodiment of the invention respectively under 330K, 298K and 100K Domain structure figure.
Figure 12 is the domain structure figure of Skyrmion in Figure 10 when magnetic field cancels.
Figure 13 is the domain structure figure of the Skyrmion that the 10th embodiment of the invention is formed.
Figure 14 is the domain structure figure of the Skyrmion that the 11st embodiment of the invention is formed.
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, below in conjunction with accompanying drawing by concrete real The present invention is described in more detail to apply example.
As (Mn100-δNiδ)αGaβAtomic percent α, β and δ in material system meets：60≤α≤70,30≤β≤40,0 <δ≤50, during alpha+beta=100, prepared MnNiGa is hexaplanar structure, and its space group is P63/mmc.Applicant's research is sent out It is unordered paramagnetic phase that existing hexagonal MnNiGa is not sharp transition more than Curie temperature, but has one by macrocyclic To the process of the ferromagnetic cluster gradually transition of shortrange order, further heating up can just enter the paramagnetic of longrange disorder to ferromagnetic domain State.Its spin-magnetic resonance collection of illustrative plates shows that ferromagnetic cluster is raised in the range of 350K-380K with temperature and tapers into, in this temperature The size of range restraint externally-applied magnetic field can just control the formation and distribution of Skyrmion phase.In the additional of { 001 } family of crystal planes direction The anisotropy field that magnetic field provides and the magnetic interaction of the ferromagnetic cluster of certain size itself, contribute to forming this on the crystal face Lattice pine torch phase.Further study show that, the Skyrmion phase of most high-density can be just obtained only under the conditions of optimum magnetic field, be less than Or more than the optimum magnetic field, can all have coexisting for stripe phases and Skyrmion phase, so that Skyrmion density is reduced.Cause This regulates and controls microcosmic magnetized state by external magnetic field, so as to reach the forming core of optimization Skyrmion phase.And the function of current in face Under regulation and control be also microcosmic magnetized state, electric field and magnetic field act on the material system simultaneously, produce induced magnetism electric interactions And spin transfer torque effect etc. causes microcell magnetized state to change, the final Si Geming for affecting and controlling magnetic domain microcell The forming core of son.
Based on above-mentioned mechanism, applicant proposed a kind of Skyrmion regulation and control method.
Embodiment 1
1) (Mn is prepared50Ni50)65Ga35Sample：By (Mn50Ni50)65Ga35Sample blocks cut into 3 millimeters × 2 millimeters of length Square sheet.For the ease of the Skyrmion for directly observing nano-scale under transmission electron microscope, by sand paper, pit instrument and polishing Instrument etc. is polished sample observation region, then is carried out with Ion Beam Thinner thinning so that the thickness in sample observation region is less than 100 nanometers.Sample of the viewing area after thinning is arranged on electric field bar and is inserted in transmission electron microscope.Wherein can pass through Keithley ammeters apply electric current to sample, and the object lens electric current using transmission electron microscope produces required magnetic field, by transmission Electronic Speculum carries out following regulation and control to (001) crystal face of sample.
2) vertical (Mn50Ni50)65Ga35(001) crystal face of sample applies the magnetic field of 5mT, and the wherein magnetic field is insufficient to allow it Strip magnetic domain is changed into Skyrmion.
3) to (Mn50Ni50)65Ga35Current density is 8.4 × 10 in sample applying face7A/m2Electric current so as to strip magnetic Farmland disappears.
4) it is zero by current reduction.
Fig. 1 is the domain structure figure of the Skyrmion obtained according to above-mentioned regulation and control method.By externally-applied magnetic field revocation (i.e. from After zero) 5mT is reduced to, it is found that part Skyrmion can be preserved stably, with non-volatile null field stability.In addition will be upper State step 4) process after (Mn50Ni50)65Ga35Temperature be increased to 330K from room temperature or be reduced to after 100K, find Si Geming Son remains able to stable existence, therefore the regulation and control method of the present invention defines the Si Geming of wide temperature range room temperature (i.e. 100K-330K) Son.
Embodiment 2
Its is substantially the same manner as Example 1, and difference is, in step 2) (magnetic field is equally not enough in the middle magnetic field for applying 10mT So that hexagonal (Mn50Ni50)65Ga35In strip magnetic domain be changed into Skyrmion).Fig. 2 is obtained according to above-mentioned regulation and control method Skyrmion domain structure figure.After externally-applied magnetic field is cancelled, it is found that established Skyrmion remains able to stable guarantor Deposit, with non-volatile null field stability.By (Mn50Ni50)65Ga35Temperature be increased to 330K from room temperature or be reduced to 100K Afterwards, it is found that Skyrmion remains able to stable existence, therefore the regulation and control method of the present invention defines the Si Geming of wide temperature range room temperature Son.
Embodiment 3
Its is substantially the same manner as Example 1, and difference is, in step 2) (magnetic field is equally not enough in the middle magnetic field for applying 30mT So that hexagonal (Mn50Ni50)65Ga35In strip magnetic domain be changed into Skyrmion).Fig. 3 is obtained according to above-mentioned regulation and control method Skyrmion domain structure figure.After externally-applied magnetic field is cancelled, it is found that established Skyrmion remains able to stable guarantor Deposit, with non-volatile null field stability.By (Mn50Ni50)65Ga35Temperature be increased to 330K from room temperature or be reduced to 100K Afterwards, it is found that Skyrmion remains able to stable existence, therefore the regulation and control method of the present invention defines the Si Geming of wide temperature range room temperature Son.
Embodiment 4
Its is substantially the same manner as Example 1, and difference is, in step 2) (magnetic field is equally not enough in the middle magnetic field for applying 50mT So that hexagonal (Mn50Ni50)65Ga35In strip magnetic domain be changed into Skyrmion).Fig. 4 is obtained according to above-mentioned regulation and control method Skyrmion domain structure figure, from fig. 4, it can be seen that the size of Skyrmion is about 90 nanometers, density is high and with array Form is arranged.After externally-applied magnetic field is cancelled, it is found that Skyrmion remains able to stable preservation, it is stable with non-volatile null field Property.By (Mn50Ni50)65Ga35Temperature be increased to 330K from room temperature or be reduced to after 100K, find highdensity Skyrmion still So can stable existence, therefore the regulation and control method of the present invention defines the Skyrmion of wide temperature range room temperature.
Embodiment 5
Its is substantially the same manner as Example 1, and difference is, in step 2) (magnetic field is equally not enough in the middle magnetic field for applying 80mT So that hexagonal (Mn50Ni50)65Ga35In strip magnetic domain be changed into Skyrmion).Fig. 5 is obtained according to above-mentioned regulation and control method Skyrmion domain structure figure.After externally-applied magnetic field is cancelled, it is found that Skyrmion remains able to stable preservation, with non- Volatibility null field stability.By (Mn50Ni50)65Ga35Temperature be increased to 330K from room temperature or be reduced to after 100K, find this lattice Pine torch remains able to stable existence, therefore the regulation and control method of the present invention defines the Skyrmion of wide temperature range room temperature.
Embodiment 6
Its is substantially the same manner as Example 1, and difference is, in step 2) (magnetic field is equally not enough in the middle magnetic field for applying 90mT So that hexagonal (Mn50Ni50)65Ga35In strip magnetic domain be changed into Skyrmion).Fig. 6 is obtained according to above-mentioned regulation and control method Skyrmion domain structure figure.After externally-applied magnetic field is cancelled, it is found that Skyrmion keeps stable, with non-volatile zero Field stability.By (Mn50Ni50)65Ga35Temperature be increased to 330K from room temperature or be reduced to after 100K, find Skyrmion still Can stable existence, therefore the regulation and control method of the present invention defines the Skyrmion of wide temperature range room temperature.
Embodiment 7
1) (Mn is prepared50Ni50)65Ga35Sample：By (Mn50Ni50)65Ga35Sample blocks are cut to 3 millimeters × 2 millimeters Rectangle sheet.For the ease of under transmission electron microscope directly observe nano-scale Skyrmion, by sand paper, pit instrument and Polishing instrument etc. is polished sample observation region, then is carried out with Ion Beam Thinner thinning so that the thickness in sample observation region Less than 100 nanometers.Sample after will be thinning loads on cryogenic sample bar, and specimen holder is inserted in transmission electron microscope.Wherein pass through Dewar addition liquid nitrogen on cryogenic sample bar can be lowered the temperature to sample or sample is entered by the heater strip of specimen holder front end Row heating, and vertical magnetic field is applied by the object lens electric current of transmission electron microscope, (001) crystal face of sample is carried out by transmission electron microscope Hereinafter regulate and control.
2) vertical (Mn50Ni50)65Ga35(001) crystal face of sample applies the magnetic field of 10mT, and the wherein magnetic field is insufficient to allow it Strip magnetic domain is changed into Skyrmion.
3) by (Mn50Ni50)65Ga35Sample is heated to 360K so as to which strip magnetic domain disappears.
4) temperature of sample is reduced into room temperature 298K.
Fig. 7 is the domain structure figure of the Skyrmion obtained according to above-mentioned regulation and control method.By above-mentioned steps 4) process after (Mn50Ni50)65Ga35Temperature be increased to 330K from room temperature or be reduced to after 100K, find Skyrmion remain able to stably deposit , therefore the regulation and control method of the present invention defines the Skyrmion of wide temperature range room temperature.After by the externally-applied magnetic field revocation of 10mT, find Skyrmion under room temperature is in null field still stable existence.
Embodiment 8
Its is substantially the same manner as Example 7, and difference is, in step 2) (magnetic field is equally not enough in the middle magnetic field for applying 30mT So that hexagonal (Mn50Ni50)65Ga35In strip magnetic domain be changed into Skyrmion).Fig. 8 is obtained according to above-mentioned regulation and control method Skyrmion domain structure figure.By (Mn50Ni50)65Ga35Temperature be increased to 330K from room temperature or be reduced to after 100K, send out Existing Skyrmion remains able to stable existence, therefore the regulation and control method of the present invention defines the Skyrmion of wide temperature range room temperature.Again After by the externally-applied magnetic field revocation of 30mT, find the Skyrmion under room temperature in null field still stable existence.
Embodiment 9
Its is substantially the same manner as Example 7, and difference is, in step 2) (magnetic field is equally not enough in the middle magnetic field for applying 50mT So that hexagonal (Mn50Ni50)65Ga35In strip magnetic domain be changed into Skyrmion).Fig. 9-11 respectively illustrates (Mn50Ni50)65Ga35In domain structure figure of the Skyrmion at temperature 330K, 298K and 100K, as can be seen from the figure tune of the invention The highdensity Skyrmion that prosecutor method is formed stable existence in the range of wide temperature range room temperature (i.e. 100K-330K).Figure 12 is illustrated Domain structure figure of the Skyrmion under room temperature in Figure 10 when magnetic field cancels, it can be recognized from fig. 12 that by the outer of 50mT Plus after the revocation of magnetic field, the still stable existence under null field of the Skyrmion under room temperature.
Embodiment 10
Its is substantially the same manner as Example 7, and difference is, in step 2) (magnetic field is equally not enough in the middle magnetic field for applying 90mT So that hexagonal (Mn50Ni50)65Ga35In strip magnetic domain be changed into Skyrmion).Figure 13 is obtained according to above-mentioned regulation and control method Skyrmion domain structure figure.By (Mn50Ni50)65Ga35Temperature be increased to 330K from room temperature or be reduced to after 100K, send out Existing Skyrmion remains able to stable existence, therefore the regulation and control method of the present invention defines the Skyrmion of wide temperature range room temperature.Again After by the revocation of the externally-applied magnetic field of 90mT, it is again seen that the still stable existence under null field of the Skyrmion under room temperature.
Embodiment 11
Its is substantially the same manner as Example 7, and difference is, in step 2) (magnetic field is equally not enough in the middle magnetic field for applying 110mT So that hexagonal (Mn50Ni50)65Ga35In strip magnetic domain be changed into Skyrmion).Figure 14 is obtained according to above-mentioned regulation and control method Skyrmion domain structure figure.By (Mn50Ni50)65Ga35Temperature be increased to 330K from room temperature or be reduced to after 100K, send out Existing Skyrmion remains able to stable existence, therefore the regulation and control method of the present invention defines the Skyrmion of wide temperature range room temperature.Again After by the revocation of the externally-applied magnetic field of 110mT, it is again seen that the still stable existence under null field of the highdensity Skyrmion under room temperature.
3 the step of above-described embodiment 1-6) in, current density is at least 8.4 × 10 in the face of applying7A/m2, with The strip magnetic domain for guaranteeing hexagonal MnNiGa disappears.
3 the step of above-described embodiment 7-11) in, can also be by (Mn50Ni50)65Ga35Sample is heated to 350K-380K to be made Its strip magnetic domain disappears.
In other embodiments of the invention, the direction in magnetic field can be with { 001 } family of crystal planes of hexagonal MnNiGa place Plane forms angle at any angle, preferably at 90 ° or so.
In other embodiments of the invention, needed for can also being applied to hexagonal MnNiGa material using other known mode Magnetic field, heating or apply electric current, however it is not limited to using in transmission electron microscope object lens electric current apply magnetic field, heater strip heating or Keithley ammeters apply electric current.
3 the step of the other embodiment of the present invention) in, simultaneously electric current can also be applied to hexagonal MnNiGa and it is added Heat, so that its strip magnetic domain disappears.
Hexagonal MnNiGa is regulated and controled using the regulation and control method of the present invention so that in (001) crystal face of hexagonal MnNiGa The high density Skyrmion array of upper formation can in null field, wide warm area stable existence.It is thus advantageous to energy-efficient side Formula is applied in non-volatile high density magnetic memory device.
Although the present invention has been described by means of preferred embodiments, however the present invention be not limited to it is described here Embodiment, done various changes and change are also included without departing from the present invention.

Claims (9)

1. the regulation and control method of the Skyrmion in a kind of hexagonal MnNiGa, it is characterised in that comprise the steps：
1) magnetic field is applied to hexagonal MnNiGa, wherein the magnetic field turns insufficient for the strip magnetic domain in hexagonal MnNiGa It is changed into Skyrmion, { 001 } family of crystal planes of not parallel hexagonal MnNiGa in direction in the magnetic field；
2) applying electric current or/and heating to hexagonal MnNiGa makes its strip magnetic domain disappear.
2. regulation and control method according to claim 1, it is characterised in that also including step 3)：It is zero by the current reduction Or/and the temperature of hexagonal MnNiGa is reduced into room temperature.
3. regulation and control method according to claim 2, it is characterised in that also including step 4)：By magnetic field revocation.
4. regulation and control method according to any one of claim 1 to 3, it is characterised in that the magnetic field is perpendicular to described six { 001 } family of crystal planes of angle MnNiGa.
5. regulation and control method according to claim 4, it is characterised in that the magnetic induction intensity in the magnetic field is 5mT-110mT.
6. regulation and control method according to claim 5, it is characterised in that the magnetic induction intensity in the magnetic field is 30mT-80mT.
7. regulation and control method according to claim 5, it is characterised in that in the step 2) in, electricity in the face of the electric current Current density is at least 8.4 × 107A/m2。
8. regulation and control method according to claim 7, it is characterised in that in the step 2) in, hexagonal MnNiGa Temperature is room temperature.
9. regulation and control method according to claim 5, it is characterised in that in the step 2) in, by hexagonal MnNiGa It is heated to 350K-380K.
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CN107332555A (en) * 2017-06-09 2017-11-07 香港中文大学（深圳） Based on magnetic Skyrmion and door and its control method
CN109390463A (en) * 2017-08-09 2019-02-26 中国科学院物理研究所 High density Skyrmion thin-film material

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CN107332555A (en) * 2017-06-09 2017-11-07 香港中文大学（深圳） Based on magnetic Skyrmion and door and its control method
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