CN106653135A - [pi] electron-orbital semiconductor quantum battery - Google Patents
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- CN106653135A CN106653135A CN201710063989.4A CN201710063989A CN106653135A CN 106653135 A CN106653135 A CN 106653135A CN 201710063989 A CN201710063989 A CN 201710063989A CN 106653135 A CN106653135 A CN 106653135A
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- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21H—OBTAINING ENERGY FROM RADIOACTIVE SOURCES; APPLICATIONS OF RADIATION FROM RADIOACTIVE SOURCES, NOT OTHERWISE PROVIDED FOR; UTILISING COSMIC RADIATION
- G21H1/00—Arrangements for obtaining electrical energy from radioactive sources, e.g. from radioactive isotopes, nuclear or atomic batteries
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Abstract
The invention relates to a [pi] electron-orbital semiconductor quantum battery comprising an N-type ohmic contact electrode, an N-type [pi] electron-orbital semiconductor substrate, and an N-type [pi] electron-orbital semiconductor epitaxial layer from bottom to top. A SiO2 passivation layer is disposed on both sides of the upper surface of the N-type [pi] electron-orbital semiconductor epitaxial layer. A graphite contact layer is located in the middle of the upper surface of the N-type [pi] electron-orbital semiconductor epitaxial layer. A radioactive isotope source layer is located above the graphite contact layer. A Schottky contact electrode is disposed above the joint of the SiO2 passivation layer and the graphite contact layer. A bonding layer is disposed over the Schottky contact electrode. The N-type [pi] electron-orbital semiconductor substrate is an organic semiconductor substrate containing aromatic structure or carbon bond structure. The doping concentration of the N-type [pi] electron-orbital semiconductor epitaxial layer is 1 * 1013 to 5 * 1014cm-3. The N-type [pi] electron-orbital semiconductor epitaxial layer has low carrier concentration, a wide depletion region, and extremely high collection rate of the generated electron hole pairs, thereby improving open-circuit voltage and energy conversion efficiency.
Description
Technical field
The present invention relates to a kind of quanta battery, and more particularly to a kind of pi-electron orbital semi-conductor type quanta battery.
Background technology
Nuclear battery, is called isotope battery, and during transformation, a neutron can change radio isotope in atomic nucleus
For a proton, while discharging an electronics, this constantly in the form of heat energy or ray can outwards release more anti-than general chemistry
Energy size, the reaction speed released when answering big energy, and changing in quality, not by the temperature in external environment, pressure, electromagnetic field
Affect, therefore nuclear battery is famous with strong interference immunity, the accurate, life-span length that works.
Nuclear battery can be divided into two big class：Hot-cast socket type and non-thermal conversion hysteria.Hot-cast socket type nuclear battery be using as metal plate -238,
The radio isotope that curium -244 or curium -242 etc. can discharge a large amount of heat energy carries out pyroelectric effect or photoelectric effect to be converted into electricity
Energy；Non-thermal conversion hysteria nuclear battery then directly can particle α, β and γ grain using load released in radioisotope decays process
The energy of sub- ray, by high-power electron beam trapping layer is entered through after electron channel, and now semi-conducting material internal electron will
By particle excitated to excitation state, so as to form electron hole, macroscopical voltage is eventually formed, after electronic loop is possessed, can be produced
Electric current is given birth to.Because this mechanism is similar to photovoltaic effect (Photovoltaic), thus with decay as energy source nuclear power
Pond is also referred to as beta voltaic element (Betavoltaic).Still having for fear of research of the science and technology to nuclear battery now cannot break through it
Place, the nuclear energy for causing the nuclear battery of this two big class turns electric energy efficiency low (hot-cast socket type nuclear battery about 0.1 to 5%, non-hot-cast socket
Type nuclear battery about 6 to 8%).
China's Mainland patent of invention publication number CN201310516945.4A discloses a kind of silicon carbide Schottky junction nuclear power
Pond, it includes successively from bottom to top N-type Ohm contact electrode, N-type SiC substrate, N-type SiC epitaxial layer, SiO2Passivation layer, Xiao Te
Base Metal contact layer, Schottky contact electrode, bonded layer and radioactive isotope power supply layer, wherein, the doping of N-type SiC substrate is dense
Spend for 1 × 1018～7 × 1018cm-3, N-type SiC epitaxial layer by Implantation Energy be 2000KeV～2500KeV, dosage be 5 ×
1013～1 × 1015cm-2Niobium ion formed doping content 1 × 1013～5 × 1014cm-3。
The conventional semiconductors that above-mentioned patent is used electrically can be produced with the micro foreign body of doping (doping)
Change.According to the characteristic electron of material itself, semi-conducting material can be divided into half matter semiconductor (intrinsic
Semiconductor) and non-half matter semiconductor (extrinsic semicondouctors), half matter semiconductor is free from external
The material of impurity, therefore any of itself electrically all comes from the property of itself, such as silicon (Si, Silicon) and germanium (Ge,
germanium)；Rather than half matter semiconductor itself then contain a considerable number of exogenous impurity, so its is electrical, not fully instead
Should be from the pure state of itself.
Silicon and germanium are all the elements of the 4th race on periodic table, and these semi-conducting materials are entering line unit in the form of covalent bond
Knot, therefore the valence electron (valence electrons) in material, the energy positioned at valence band (valence band) will be taken
Rank, valence electron must absorb can just rise to conduction band (conducting band) more than the energy of its energy gap (energy gap)
Energy rank.Such characteristic causes electric conductivity to increase except increase can free electron number, and original valency electricity is also caused in addition
Next electricity hole (electron holes) is stayed in the valence band that son is located, this electronic meeting is positively charged, can help conduction, institute
The electrical conductivity possessed with semi-conducting material will be conduction band electron and the summation produced by valence band electricity hole.
Conventional semiconductor material by admixture can adjust that semi-conducting material originally had it is electrical.If in periodic table
The element of some the 5th races is doped with the semi-conducting material of the 4th race, the negatron in material can be caused to increase, it is such non-
Half matter semiconductor is referred to as N-type semiconductor；If the element of some three races of adulterating in the semi-conducting material of the race of periodic table the 4th,
Positive electron number in material can be caused to increase, this kind of non-half matter semiconductor is referred to as P-type semiconductor.
Electron energy near conventional semiconductors bulk such as metal fermi level is continuous.When particle size drops to
During a certain numerical value, the electron energy near fermi level is changed into discrete discontinuously energy rank from continuous state.In addition, in semiconductor
Nano particle, its highest for filling up electronics is occupied molecular orbital (Highest Occupied Molecular
Orbltal, abbreviation HOMO) and do not occupy molecular orbital (Lowest Unoccupied MoIecula without the minimum of electronics
Orbital, abbreviation LUMO) it is discontinuous, this kind of energy rank broadens, and becomes discontinuous phenomenon, referred to as quantum size effect.
For conventional semiconductors bulk, it has unlimited atom, and conductive electron number N also can be considered infinitely great, then it can rank spacing
6E levels off to zero.
Radiation is referred in absolute temperature material above zero with electromagnetic wave (photon) or particulate forms to emission energy
Amount, also referred to as radiates.Therefore, radiation can inherently be divided into particle radiation (including α particles i.e. helium atomic nucleus, β particles i.e. just
Negatron, proton and neutron) and electromagnetic radiation (also crying photon radiation).Electromagnetic radiation, is respectively from low to high by frequency：Wirelessly
Electric wave, microwave, infrared light, visible ray, ultraviolet light, X-ray and gamma-rays.Afterwards both belong to high-energy electromagnetic radiation.To high energy shortwave
The particles such as long α, β and γ say that its wavelength is extremely short, and the electron number N values of conventional semiconductors are excessive, need the conversion of N values also very little
Material, this will cause 6E values to be not zero and have certain value, can rank spacing divide.
In 1977, Hideki Shirakawa, Alan's Mike's Dare Mead and Alan's black square were reported in the poly- second of oxidation for mixing iodine
Alkynes has similar high conductivity.Because having initiative in conducting polymer field i.e. conjugated polymer (pi-electron orbital)
It was found that, they obtain Nobel chemistry Prize in 2000 jointly.Since the later stage in the 1980's, pi-electron orbital semiconductor becomes leads
One important application of electric polymer.
A variety of bottlenecks that time generation electronic material is faced will be solved using pi-electron orbital semiconductor.1981, Massachusetts
The Institute of Technology proposes the concept of organic molecule pi-electron orbital semiconductor.Organic molecule is played an important role in life science,
Therefore it may have electrically often being less noticeable for semi-conducting material.In fact organic material is not good conduction
Material, but alkali base has pi-electron, and the orbital that alkali base has can be produced along axis and overlapped, the phenomenon that this orbital overlaps,
It is believed to promote the electric conductivity of molecule.
D.D.Eley inquired into the electrical of many aromatic compounds (aromatic compounds), learns and works as pi-electron
When number increases, the energy gap of semiconductor can reduce, and the molecular crystalline that 20 pi-electrons are constituted, the energy gap having is about 1.5
±0.5eV；10 pi-electrons, the energy gap having is about 3.0 ± 1eV.
The electron transition situation of pi-electron orbital semiconductor is different with traditional inorganic semiconductor, and inorganic semiconductor is (such as silicon, arsenic
Change gallium) it is to be closely aligned atom together with covalent bond, so the part that electron cloud overlaps is a lot so that the energy rank of atom
Division is produced, conduction band and valence band is formed.In conventional solid-state semiconductor, electronics is the mechanism that conduction band is transitted to from valence band, so
The optical transition mechanism of traditional inorganic semiconductor is mainly determined by valence band, conduction band.But pi-electron orbital semiconductor be not with
Covalently bonded is combined, and is with Fan get Wa Li (van der between molecule and molecule in pi-electron orbital semiconductor crystal
Waals'force) link up.Compared to covalent bond, Fan get Wa Li is just much smaller, therefore electron cloud between molecule and molecule
Overlap just much smaller, although energy rank still can divide, but the degree very little for dividing, so the energy of pi-electron orbital semiconductor crystal
Band is just very narrow, and less, electronics still jumps between the hybridized orbital of molecule itself for the energy stage structure and single molecular difference of crystal
Move, electrons from intramolecular highest occupied molecular orbital (the highest occupied molecular orbital,
Abbreviation HOMO) transit to it is minimum do not occupy molecular orbital (the lowest unoccupied molecular orbital, letter
Claim LUMO), even higher does not occupy molecular orbital (the unoccupied molecular orbital, abbreviation UMO).
But for pi-electron orbital semiconductor, transition of exciton (exciton) the jump ratio electronics between orbital is more important, exciton
Play the part of the transition phenomenon point relatively often occurred in critically important role, pi-electron orbital semiconductor in optical transition, carrier transportation
For：(1) valence band-energy band transition：Energy is obtained after the Electron absorption photon of valence band, from valence band conduction band is transitted to, so conduction band
It is the excitation state of electronics；(2) exciton transition：Produce transition after the Electron absorption photon of valence band, but due to electronics and electric hole it
Between Coulomb force effect so that electronics and electric hole are bound together, and form electron-hole pair.Now Coulomb force provides binding energy,
Although this allows electronics in excitation state, the energy ratio conduction band of this excitation state is little, causes conduction band to exist under excitation state.
So energy gap (energy gap) rate of exchange band of exciton transition-can the energy gap with transition it is little.
Conventional semiconductor material electrically can be by some admixtures that adulterate adjusting so as to can be used to as semiconductor
The design and fabrication of element.But if to come as semi-conducting material using pi-electron orbital semiconductor, it is necessary to find suitable use
Come the ion or compound that adulterate to change electrical.The special construction having due to pi-electron orbital semi-conducting material and property
Matter, such dopant material from mix different from mode and conventional semiconductors, can be used to adsorb or be incorporated into pi-electron orbital and partly lead
The admixture of body material is typically some can absorb radioactive metal misfit thing.It is organic that Intercalator is that one kind can link
The compound of molecule, is the cation with plane aromatic heterocycle, such as ethidium (ethidium), and they can insert pi-electron
In orbital semiconductor material structures, cause molecule to be squeezed and have prolongation and the phenomenon that diminishes of diameter, every 1.02nm away from
From may be inserted into an intercalator molecule, these compounds that can be linked to pi-electron orbital semi-conducting material include
〔Pt(terpy)(SCH2CH2OH)〕+、[Pt(bpy)(en)]2+、[Pt(o-phen)(en)]2+[Pt (py)2(en)]2+Deng.
In addition, planar metal misfit thing (the planar metal of organic molecule can more also be linked
Complexes), such as metalloporphyrins, such as MPE-Fe (II) and [Pt (AO-en) Cl2] etc., these polycyclic compounds
The free electron of transition-metal cation institute band, can serve as being doped in π in the pi-electron being had, and metal misfit thing
The admixture of electronics orbital semi-conducting material, to adjust the electrical of pi-electron orbital semi-conducting material molecule.Except above-mentioned method it
Outward, pi-electron orbital semi-conducting material molecule can also be processed using this platinum compounds of cisplatin.
The photon transition effects of pi-electron orbital semi-conducting material molecule, can go out electron emission under the bias of very little
Go, experiment confirms that pi-electron orbital semi-conducting material molecule can change the particle such as α, β and γ of high energy short wavelength institute band under bias
Energy, produced current density is million dual intensities of conventional solid-state semiconductive thin film after conversion.Pi-electron orbital semiconductor
Change of the material molecule to the electric field of high energy particle is extremely sensitive, compares conventional solid-state semiconductor, be make absorb carry can α, β and
The excellent material of the high-energy ray converting electrical energy such as γ particles.
The content of the invention
It is an object of the invention to a kind of pi-electron orbital semi-conductor type quanta battery is proposed, to improve nuclear battery conversion electricity
The efficiency of energy.
Pi-electron orbital semi-conductor type quanta battery, from bottom to top including N-type Ohm contact electrode, N-type pi-electron orbital half
Conductor substrate and N-type pi-electron orbital semiconductor epitaxial layers,
SiO2Passivation layer is located at N-type π located at the upper surface both sides of N-type pi-electron orbital semiconductor epitaxial layers, graphite contact layer
The upper surface middle part of electronics orbital semiconductor epitaxial layers, radioactive isotope power supply layer is located at graphite contact layer top,
Schottky contact electrode is located at SiO2The top of passivation layer and graphite contact layer adjacent, bonded layer is located at Schottky
Contact electrode top, wherein,
N-type pi-electron orbital semiconductor substrate is the organic semiconductor substrate containing aromatic structure or containing carbon bond structure half
Conductor substrate,
The doping content of N-type pi-electron orbital semiconductor epitaxial layers is 1 × 1013～5 × 1014cm-3, doping content is to pass through
Implantation dosage is 6 × 1013～1 × 1015cm-2Cation misfit thing formed.
Further, the thickness of N-type pi-electron orbital semiconductor epitaxial layers is 3～5 μm.
Further, radioactive isotope power supply layer is -63 layers of nickel, -238 layers of metal plate, -244 layers of curium, curium -242 layers, uranium -235
One kind in layer, -238 layers of uranium.
Further, N-type Ohm contact electrode is graphite electrode.
Further, Schottky contact electrode is the one kind in Ni electrodes, Pt electrodes, Au electrodes, graphite electrode.
According to the present invention, N-type pi-electron orbital semiconductor substrate can reduce epitaxial layer with N-type pi-electron orbital semiconductor epitaxial layers
Carrier concentration, increase the width of depletion region, and the electron hole pair collection rate produced by improving, open so as to improving battery
Road voltage and energy conversion efficiency.
Pi-electron orbital semi-conductor type quanta battery disclosed by the invention has the advantages that：
1st, high-energy overall efficiency：Nuclear energy is converted into the efficiency about 10 to 30% of electric energy；
2nd, radiation protection：Battery surface has the permission dose of radiation less than 10 mrems；
3rd, specific energy：The kilowatt hour of gravimetric specific energy about 10 to 30/kilogram, the kilowatt hour of energy density per unit volume about 10 to 30/cube
Centimetre；
4th, service life：Can use up to 5 to 100 years according to actual state；
5th, high-performance ratio：Combination property is than being about 50 to 1000 times of conventional lithium ion battery.
Description of the drawings
Fig. 1 is the structural representation of an embodiment of pi-electron orbital semi-conductor type quanta battery disclosed by the invention；
Fig. 2 is the sectional view in A-A faces in Fig. 1；
Wherein：
1-N type Ohm contact electrode 2-N type pi-electron orbital semiconductor substrates
3-N type pi-electron orbital semiconductor epitaxial layers 4-SiO2Passivation layer
5- graphite contact layer 6- Schottky contact electrodes
7- bonded layer 8- radioactive isotope power supply layers
Specific embodiment：
It is to allow above-mentioned purpose of the present invention, effect, feature to become apparent, preferred embodiment cited below particularly describes it in detail：
Specific embodiment 1
Refer to Fig. 1 and Fig. 2, disclosed herein pi-electron orbital semi-conductor type quanta battery, from bottom to top including one
N-type Ohm contact electrode 1, a N-type pi-electron orbital semiconductor substrate 2 and a N-type pi-electron orbital semiconductor epitaxial layers 3,
SiO2Passivation layer 4 is located at the upper surface both sides of N-type pi-electron orbital semiconductor epitaxial layers 3,
Graphite contact layer 5 is located at the upper surface middle part of N-type pi-electron orbital semiconductor epitaxial layers 3,
Radioactive isotope power supply layer 8 is located at the top of graphite contact layer 5,
Schottky contact electrode 6 is located at SiO2The top of passivation layer 4 and the adjacent of graphite contact layer 5,
Bonded layer 7 is located at the top of Schottky contact electrode 6, wherein,
N-type pi-electron orbital semiconductor substrate 2 is the organic semiconductor substrate containing aromatic structure,
The doping content of N-type pi-electron orbital semiconductor epitaxial layers 3 is 1 × 1013, the doping content is by implantation dosage
For 6 × 1013cm-2Cation misfit thing (ethidium) formed.
N-type pi-electron orbital semiconductor substrate 2 is to be arranged at the top of N-type Ohm contact electrode 1, and its doping content is
1x1018～7x1018cm-3。
In present embodiment, N-type Ohm contact electrode 1 can be graphite electrode or be not limited to Ni/Cr/Au alloy-layers.
N-type pi-electron orbital semiconductor epitaxial layers 3 are arranged at N-type pi-electron orbital semiconductor substrate (2) top.
In present embodiment, the thickness of N-type pi-electron orbital semiconductor epitaxial layers 3 is 3 μm.
SiO2Passivation layer 4 is the part for being arranged at the top of N-type pi-electron orbital semiconductor epitaxial layers 3.
Graphite contact layer 5 is another above N-type pi-electron orbital semiconductor epitaxial layers 3 to be arranged at Schottky contact electrode 6
A part.
In present embodiment, Schottky contact electrode 6 is Ni electrodes.
Bonded layer 7 is arranged at the top of Schottky contact electrode 6.
In present embodiment, bonded layer 7 is Cr/Au alloy-layers.
Radioactive isotope power supply layer 8 is arranged at the top of graphite contact layer 5.
Further, radioactive isotope power supply layer 8 is -63 layers of nickel.
Must chat bright, each Rotating fields are formed and not invent protected model with the method for corresponding lower section Rotating fields
Enclose, and the personage to be familiar with the technical field of the invention understands, and with known techniques means (as physical deposition, chemistry sink
Product, coating, immersion, chemical replacement or sprinkling) realizing, therefore the method for being formed need not be repeated in this.
Through said structure, due to N-type pi-electron orbital semiconductor substrate 2 and N-type pi-electron orbital semiconductor epitaxial layers 3
Configuration, can reduce the carrier concentration of epitaxial layer, increase width of depletion region, and the electron hole pair collection rate produced by improving,
So as to improve the open-circuit voltage and energy conversion efficiency of battery.
Specific embodiment 2
It is roughly the same with specific embodiment 1, differ only in：
The doping content of N-type pi-electron orbital semiconductor epitaxial layers 3 is 5 × 1014cm-3, the doping content is by injection
Dosage is 1 × 1015cm-2Cation misfit thing (metalloporphyrin) formed；
N-type pi-electron orbital semiconductor substrate 2 is the semiconductor substrate containing carbon bond structure；
The thickness of N-type pi-electron orbital semiconductor epitaxial layers 3 is 5 μm；
Schottky contact electrode 6 is Pt electrodes；
Radioactive isotope power supply layer 8 is -238 layers of metal plate.
Specific embodiment 3
It is roughly the same with specific embodiment 1, differ only in：
The doping content of N-type pi-electron orbital semiconductor epitaxial layers 3 is 2 × 1014cm-3, the doping content is by injection
Dosage is 6 × 1014cm-2Cation misfit thing (ethidium) formed；
The thickness of N-type pi-electron orbital semiconductor epitaxial layers 3 is 4 μm；
Schottky contact electrode 6 is Au electrodes；
Radioactive isotope power supply layer 8 is -244 layers of curium.
Specific embodiment 4
It is roughly the same with specific embodiment 1, differ only in：
Schottky contact electrode 6 is graphite electrode；
Radioactive isotope power supply layer 8 is -242 layers of curium.
Specific embodiment 5
It is roughly the same with specific embodiment 1, differ only in：
Radioactive isotope power supply layer 8 is -235 layers of uranium.
Specific embodiment 6
It is roughly the same with specific embodiment 1, differ only in：
Radioactive isotope power supply layer 8 is -238 layers of uranium.
Only as described above, only the preferred embodiments of the invention, but the scope of enforcement of the invention can not be limited with this；
Therefore, all simple equivalent changes made according to scope of the present invention patent and description of the invention content and modification all still belong to this
In the range of patent of invention covers.
Claims (5)
1. pi-electron orbital semi-conductor type quanta battery, it is characterised in that include from bottom to top：N-type Ohm contact electrode, N-type π
Electronics orbital semiconductor substrate and N-type pi-electron orbital semiconductor epitaxial layers,
SiO2Passivation layer is located at the upper surface both sides of N-type pi-electron orbital semiconductor epitaxial layers,
Graphite contact layer is located at the upper surface middle part of N-type pi-electron orbital semiconductor epitaxial layers,
Radioactive isotope power supply layer is located at graphite contact layer top,
Schottky contact electrode is located at SiO2The top of passivation layer and graphite contact layer adjacent,
Bonded layer is located at Schottky contact electrode top, wherein,
N-type pi-electron orbital semiconductor substrate is the organic semiconductor substrate containing aromatic structure or the semiconductor containing carbon bond structure
Substrate,
The doping content of N-type pi-electron orbital semiconductor epitaxial layers is 1 × 1013～5 × 1014cm-3, doping content is by injection
Dosage is 6 × 1013～1 × 1015cm-2Cation misfit thing formed.
2. pi-electron orbital semi-conductor type quanta battery according to claim 1, it is characterised in that N-type pi-electron orbital half
The thickness of conductor epitaxial layer is 3～5 μm.
3. pi-electron orbital semi-conductor type quanta battery according to claim 1, it is characterised in that radioactive isotope power supply
Layer is the one kind in -63 layers of nickel, -238 layers of metal plate, -244 layers of curium, -242 layers of curium, -235 layers of uranium, -238 layers of uranium.
4. pi-electron orbital semi-conductor type quanta battery according to claim 1, it is characterised in that N-type Ohm contact electrode
For graphite electrode.
5. pi-electron orbital semi-conductor type quanta battery according to claim 1, it is characterised in that Schottky contact electrode
For the one kind in Ni electrodes, Pt electrodes, Au electrodes, graphite electrode.
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Cited By (1)
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|---|---|---|---|---|
| CN107945901A (en) * | 2017-12-13 | 2018-04-20 | 深圳贝塔能量技术有限公司 | A kind of quantum dot beta voltaic element |
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