CN106648250B - In-Cell touch panel and manufacturing method thereof - Google Patents
In-Cell touch panel and manufacturing method thereof Download PDFInfo
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- CN106648250B CN106648250B CN201611251801.0A CN201611251801A CN106648250B CN 106648250 B CN106648250 B CN 106648250B CN 201611251801 A CN201611251801 A CN 201611251801A CN 106648250 B CN106648250 B CN 106648250B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims description 26
- 229910044991 metal oxide Inorganic materials 0.000 claims description 25
- 150000004706 metal oxides Chemical class 0.000 claims description 25
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 5
- 238000005530 etching Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0412—Digitisers structurally integrated in a display
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/0416—Control or interface arrangements specially adapted for digitisers
- G06F3/0418—Control or interface arrangements specially adapted for digitisers for error correction or compensation, e.g. based on parallax, calibration or alignment
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate
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- Engineering & Computer Science (AREA)
- General Engineering & Computer Science (AREA)
- Theoretical Computer Science (AREA)
- Human Computer Interaction (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Liquid Crystal (AREA)
- Position Input By Displaying (AREA)
Abstract
The invention provides an In-Cell touch panel and a manufacturing method thereof, wherein each pixel unit comprises at least 3 sub-pixel units, each pixel unit comprises a grid line and a data line crisscrossed with the grid line, and the In-Cell touch panel is characterized In that: the pixel unit is provided with a grid line, a pixel unit is arranged on the grid line, and the grid line is vertically and horizontally crossed with the grid line. The In-Cell touch panel adopts an IGZO process, and the display mode is FFS; according to the invention, the touch data line is manufactured by adopting the metal layer where the data line is positioned, so that a touch layer and an insulating layer are reduced, the manufacturing process is simple, the cost is reduced compared with the prior art, and the yield is improved.
Description
Technical Field
The invention belongs to the technical field of liquid crystal display, and particularly relates to an In-Cell touch panel and a manufacturing method thereof.
Background
With the development of mobile terminals, the application range of touch panels is wider and wider, In-Cell touch is the foremost touch technology at present, In-Cell touch panels are thinner and clearer, In-Cell touch is mainly divided into mutual capacitance and self-capacitance, but almost all existing technical schemes need to add a touch layer on the original non-touch manufacturing to achieve the touch function, the added manufacturing changes the original process, engineers need to solve the problems In the design principle and debug the new process, and therefore yield is difficult to guarantee.
Fig. 1 is a cross-sectional view of a conventional self-contained In-Cell touch panel, which includes: the touch panel includes a gate 101, a gate insulating layer 102 covering the gate 101, a semiconductor layer 103 on the gate insulating layer 102, an etching stopper layer 104 on the semiconductor layer 103, a source/drain 105 on the etching stopper layer 104 and in contact with the semiconductor layer 103, an insulating layer 106 covering the source/drain 105, a JAS layer 107 covering the insulating layer 106, a transparent common electrode 108 on the JAS layer 107, a touch insulating layer 109 covering the transparent common electrode 108, a touch signal line 110 on the touch insulating layer 109 and in contact with the transparent common electrode 108, a pixel insulating film 111 on the touch signal line 110, and a transparent pixel electrode 112 on the pixel insulating film 111 and connected to the drain.
In order to reduce the parasitic capacitance between the touch signal line 110 and the data line, the touch signal line 110 is disposed above the JAS layer 107, and the data line is disposed below the JAS layer 107, so that the touch signal line 110 and the transparent pixel electrode 112 are both disposed above the JAS layer 107, and the middle is separated by only one pixel insulating film 111.
The touch signal line of the existing self-capacitance In-Cell touch panel is arranged below JAS, and the transparent common electrode is arranged above JAS layer, so that the capacitance reduction effect is obvious, but the process is complex and the yield is low.
Disclosure of Invention
The invention aims to provide an In-Cell touch panel which reduces a touch layer and an insulating layer and has a simple manufacturing process and a manufacturing method thereof.
The invention provides an In-Cell touch panel which comprises a plurality of pixel units, wherein each pixel unit comprises at least 3 sub-pixel units, each pixel unit comprises a grid line, a data line and a touch data line, the data lines are criss-cross with the grid lines, the touch data lines are positioned outside the pixel units and are parallel to the data lines, the touch data lines and the data lines are formed simultaneously, the touch data lines are positioned between two adjacent pixel units, and the touch data lines are criss-cross with the grid lines.
Preferably, the pixel unit further includes a metal oxide semiconductor layer, an etch stopper layer on the metal oxide semiconductor layer, and a source electrode and a drain electrode in contact with the metal oxide.
Preferably, the metal oxide semiconductor layer is indium gallium zinc oxide.
Preferably, the pixel cell further includes a JAS layer on the source and drain electrodes.
Preferably, the pixel unit further includes a transparent common electrode on the JAS layer and electrically connected to the touch data line.
Preferably, the display mode of the In-Cell touch panel is FFS.
The invention also provides a manufacturing method of the In-Cell touch panel, which comprises the following steps:
the first step is as follows: the first metal line forms a grid line;
the second step is that: forming a gate insulating layer on the gate line;
the third step: forming a metal oxide semiconductor layer on the gate insulating layer;
the fourth step: forming an etch stopper layer on the metal oxide semiconductor layer;
the fifth step: the second metal wire forms a source electrode and a drain electrode which are contacted with the metal oxide semiconductor layer, a data wire which is crisscrossed with the grid line and a touch control data wire between two adjacent pixel units;
and a sixth step: forming a first insulating film on the second metal;
the seventh step: forming a JAS layer on the first insulating film;
eighth step: arranging a first opening on the touch data line;
the ninth step: forming a transparent common electrode on the JAS layer, wherein the transparent common electrode is contacted with the touch data line through the first opening;
the tenth step: forming a second insulating film on the transparent common electrode;
the eleventh step: forming a second opening on the drain electrode;
the twelfth step: and forming a pixel electrode on the second insulating film, wherein the pixel electrode is electrically connected with the drain electrode through the second opening.
Preferably, the metal oxide semiconductor layer is indium gallium zinc oxide.
Preferably, the JAS layer is an organic insulating film.
The self-contained In-Cell touch panel adopts an IGZO process, and the display mode is FFS; according to the invention, the touch data line is manufactured by adopting the metal layer where the data line is positioned, so that a touch layer and an insulating layer are reduced, the manufacturing process is simple, the cost is reduced compared with the prior art, and the yield is improved.
Drawings
FIG. 1 is a cross-sectional view of a conventional self-contained In-Cell touch panel;
FIG. 2 is a schematic structural diagram of a single pixel unit of the self-contained In-Cell touch panel according to the present invention;
FIG. 3 is a schematic structural diagram of a touch area of the self-contained In-Cell touch panel according to the present invention;
fig. 4 is a cross-sectional view of the self-contained In-Cell touch panel of the present invention.
Detailed Description
The present invention is further illustrated by the following figures and specific examples, which are to be understood as illustrative only and not as limiting the scope of the invention, which is to be given the full breadth of the appended claims and any and all equivalent modifications thereof which may occur to those skilled in the art upon reading the present specification.
Fig. 2 is a schematic structural diagram of a single pixel unit of the self-contained In-Cell touch panel according to the present invention, the display mode of the structure is FFS, a plurality of pixel units 100 are disposed In the In-Cell touch panel, each pixel unit 100 includes a first sub-pixel unit 10, a second sub-pixel unit 20, and a third sub-pixel unit 30, the pixel unit 100 includes a transverse gate line 1, a first data line 21, a second data line 22, a third data line 23, and a fourth data line 24 crisscrossed with the gate line 1, and the first data line 21, the second data line 22, and the third data line 23 are sequentially disposed and parallel to each other.
In the present embodiment, each pixel unit 100 includes three sub-pixel units, and in other embodiments, may also include four sub-pixel units.
The first sub-pixel unit 10 is formed by staggering a gate line 1 and a first data line 21, the second sub-pixel unit 20 is formed by staggering the gate line 1 and a second data line 22, the third sub-pixel unit 30 is formed by staggering the gate line 1 and a third data line 23, a first TFT switch 31 connected with the gate line 1 and the first data line 21 is arranged in the first sub-pixel unit 10, a second TFT switch 32 connected with the gate line 1 and the second data line 22 is arranged in the second sub-pixel unit 20, and a third TFT switch 33 connected with the gate line 1 and the third data line 23 is arranged in the third sub-pixel unit 30.
The self-contained In-Cell touch panel further includes touch data lines 41 located outside the pixel units 100 and parallel to the first data lines 21, the touch data lines 41 are located between two adjacent pixel units 100, and the touch data lines 41 are criss-cross with the gate lines 1.
The touch data lines 41 are not used for signal transmission of data lines, but are used exclusively for touch signal transmission, i.e., as touch signal lines. The touch data line 41 is provided with a first opening 303, and is connected to the transparent common electrode 304 through the first opening 303.
The pixel unit further comprises a metal oxide semiconductor layer 12, an etching barrier layer 13 located on the metal oxide semiconductor layer 12, a source electrode 201 and a drain electrode 202 which are in contact with the metal oxide, a JAS layer 302 located on the source electrode 201 and the drain electrode 202, and a transparent common electrode 304 located on the JAS layer 302 and electrically connected with the touch data line 41.
The source 201, the drain 202, the data line 203 and the touch data line 41 are all formed by the same metal layer; the metal oxide semiconductor layer 12 is indium gallium zinc oxide.
Fig. 3 is a schematic surface structure diagram of a touch area. Namely: a touch data line 41 is disposed between the pixel units 100 in the same adjacent row.
Fig. 4 is a cross-sectional view of the self-contained In-Cell touch panel of the present invention, which includes the following steps:
the first step is as follows: the first metal line forms a gate line 1;
the second step is that: forming a gate insulating layer 11 on the gate line 1;
the third step: forming a metal oxide semiconductor layer 12 on the gate insulating layer 11;
the fourth step: forming an etching stopper layer 13 on the metal oxide semiconductor layer 12;
the fifth step: the second metal line forms a source electrode 201 and a drain electrode 202 which are in contact with the metal oxide semiconductor layer 12, a data line 203 which is crisscrossed with the gate line 1, and a touch data line 41 between two adjacent pixel units 100;
and a sixth step: forming a first insulating film 301 on the second metal;
the seventh step: forming a JAS layer 302 on the first insulating film 301;
eighth step: a first opening 303 is formed in the touch data line 41;
the ninth step: forming a transparent common electrode 304 on the JAS layer 302, wherein the transparent common electrode 304 is in contact with the touch data line 41 through the first opening 303;
the tenth step: forming a second insulating film 305 on the transparent common electrode 304;
the eleventh step: forming a second opening 306 in the drain 202;
the twelfth step: a pixel electrode 307 is formed on the second insulating film 305, and the pixel electrode 307 is electrically connected to the drain electrode 202 through the second opening 306.
The metal oxide semiconductor layer 12 is an indium gallium zinc three metal oxide semiconductor layer, i.e., IGZO.
The data line 41 includes a first data line 21, a second data line 22, a third data line 23, and a fourth data line 24.
The JAS layer is an organic insulating film.
According to the invention, the touch data line 41 and the transparent common electrode 304 are both arranged on the JAS layer 302, namely only one metal wire which is the same as the source and drain electrodes is added on the existing non-touch IGZO FFS manufacturing process, the process is simple, the cost is reduced, and the yield is obviously improved.
The touch data line and the grid line of each pixel unit have an overlapping area, and an etching barrier layer is added compared with an a-Si process by adopting an IGZO process, so that the parasitic capacitance between the touch data line and the grid line is smaller; the touch data line and the transparent common electrode are respectively arranged on the lower layer and the upper layer of the JAS layer, when a certain area receives signals, noise generated by parasitic capacitance in other areas is reduced, and touch sensitivity is improved; the touch data lines are distributed at the edge of each pixel unit and are arranged in parallel with the data lines; designing openings of the JAS layer and the insulating layer on the numerical control data line, and connecting the openings to the transparent common electrode of the corresponding block according to the distribution logic of the block; the invention can reduce the signal frequency of each frame, increase the touch sensing time under the condition of unchanged display time and improve the touch effect.
The self-contained In-Cell touch panel is simple In manufacture, realizes a touch function, and can successfully realize the manufacture of the touch panel under the condition of not influencing the display and touch effects; according to the self-contained In-Cell touch panel developed based on the IGZO process, the IGZO has lower Ioff than the traditional a-Si, the touch panel using the IGZO process can prolong the picture time of one frame, the IGZO panel does not influence the image quality In the prolonged holding time, and the increased time can be used for touch sensing, so that the touch effect is better; because the traditional IGZO process is not changed, the touch panel produced by the design has higher yield and lower cost.
The self-contained In-Cell touch panel adopts an IGZO process, and the display mode is FFS; according to the invention, the touch data line is manufactured by adopting the metal layer where the data line is positioned, so that a touch layer and an insulating layer are reduced, the manufacturing process is simple, the cost is reduced compared with the prior art, and the yield is improved.
Claims (7)
1. An In-Cell touch panel comprises a plurality of pixel units, each pixel unit comprises at least 3 sub-pixel units, each pixel unit comprises a grid line and a data line crisscrossed with the grid line, and the In-Cell touch panel is characterized In that: the touch control data line is positioned between two adjacent pixel units, and the touch control data line and the grid line are crisscrossed; the pixel unit further includes a metal oxide semiconductor layer, an etch stopper layer on the metal oxide semiconductor layer, and a source electrode and a drain electrode in contact with the metal oxide semiconductor layer.
2. The In-Cell touch panel according to claim 1, wherein: the metal oxide semiconductor layer is indium gallium zinc oxide.
3. The In-Cell touch panel according to claim 1, wherein: the pixel unit further includes an organic insulating film on the source and drain electrodes.
4. The In-Cell touch panel according to claim 1, wherein: the pixel unit further includes a transparent common electrode on the organic insulating film and electrically connected to the touch data line.
5. The In-Cell touch panel according to claim 1, wherein: the display mode of the In-Cell touch panel is FFS.
6. The method for manufacturing an In-Cell touch panel according to any one of claims 1 to 5, comprising the steps of:
the first step is as follows: the first metal line forms a grid line;
the second step is that: forming a gate insulating layer on the gate line;
the third step: forming a metal oxide semiconductor layer on the gate insulating layer;
the fourth step: forming an etch stopper layer on the metal oxide semiconductor layer;
the fifth step: the second metal wire forms a source electrode and a drain electrode which are contacted with the metal oxide semiconductor layer, a data wire which is crisscrossed with the grid line and a touch control data wire between two adjacent pixel units;
and a sixth step: forming a first insulating film on the second metal;
the seventh step: forming an organic insulating film on the first insulating film;
eighth step: arranging a first opening on the touch data line;
the ninth step: forming a transparent common electrode on the organic insulating film, wherein the transparent common electrode is in contact with the touch data line through the first opening;
the tenth step: forming a second insulating film on the transparent common electrode;
the eleventh step: forming a second opening on the drain electrode;
the twelfth step: and forming a pixel electrode on the second insulating film, wherein the pixel electrode is electrically connected with the drain electrode through the second opening.
7. The method for manufacturing In-Cell touch panel according to claim 6, wherein the metal oxide semiconductor layer is indium gallium zinc oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611251801.0A CN106648250B (en) | 2016-12-30 | 2016-12-30 | In-Cell touch panel and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611251801.0A CN106648250B (en) | 2016-12-30 | 2016-12-30 | In-Cell touch panel and manufacturing method thereof |
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| CN106648250A CN106648250A (en) | 2017-05-10 |
| CN106648250B true CN106648250B (en) | 2020-04-10 |
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| CN201611251801.0A Expired - Fee Related CN106648250B (en) | 2016-12-30 | 2016-12-30 | In-Cell touch panel and manufacturing method thereof |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107329605B (en) * | 2017-05-20 | 2020-07-07 | 南京中电熊猫液晶显示科技有限公司 | Touch display panel and feedback control method and manufacturing method thereof |
| CN108761901A (en) * | 2018-04-28 | 2018-11-06 | 武汉华星光电技术有限公司 | Array substrate and display panel |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103105989A (en) * | 2013-01-24 | 2013-05-15 | 北京京东方光电科技有限公司 | Capacitance type embedded touch screen and display device |
| CN103294317A (en) * | 2013-05-31 | 2013-09-11 | 京东方科技集团股份有限公司 | Array substrate, touch panel and display device |
| CN103838027A (en) * | 2014-03-31 | 2014-06-04 | 南京中电熊猫液晶显示科技有限公司 | Liquid crystal display panel with JAS layer |
| CN104007571A (en) * | 2014-06-04 | 2014-08-27 | 南京中电熊猫液晶显示科技有限公司 | Array base plate and manufacture method thereof |
| CN104536636A (en) * | 2015-01-27 | 2015-04-22 | 京东方科技集团股份有限公司 | Array substrate, touch panel and manufacturing method of array substrate |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103105989A (en) * | 2013-01-24 | 2013-05-15 | 北京京东方光电科技有限公司 | Capacitance type embedded touch screen and display device |
| CN103294317A (en) * | 2013-05-31 | 2013-09-11 | 京东方科技集团股份有限公司 | Array substrate, touch panel and display device |
| CN103838027A (en) * | 2014-03-31 | 2014-06-04 | 南京中电熊猫液晶显示科技有限公司 | Liquid crystal display panel with JAS layer |
| CN104007571A (en) * | 2014-06-04 | 2014-08-27 | 南京中电熊猫液晶显示科技有限公司 | Array base plate and manufacture method thereof |
| CN104536636A (en) * | 2015-01-27 | 2015-04-22 | 京东方科技集团股份有限公司 | Array substrate, touch panel and manufacturing method of array substrate |
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