CN106644799A - Local fast heating experimental device for novel ultra-high temperature ceramic test piece - Google Patents
Local fast heating experimental device for novel ultra-high temperature ceramic test piece Download PDFInfo
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- CN106644799A CN106644799A CN201610880912.1A CN201610880912A CN106644799A CN 106644799 A CN106644799 A CN 106644799A CN 201610880912 A CN201610880912 A CN 201610880912A CN 106644799 A CN106644799 A CN 106644799A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N3/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N3/60—Investigating resistance of materials, e.g. refractory materials, to rapid heat changes
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2203/00—Investigating strength properties of solid materials by application of mechanical stress
- G01N2203/003—Generation of the force
- G01N2203/0057—Generation of the force using stresses due to heating, e.g. conductive heating, radiative heating
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Abstract
The invention relates to a local fast heating experimental device for a novel ultra-high temperature ceramic test piece. The local fast heating experimental device is characterized in that a positive pole and a negative pole of amplified voltage U0 are connected to the left and right sides of a copper electrode respectively and is connected with a positive pole and a negative pole of an amplifying circuit respectively, the amplifying circuit is connected with a positive pole and a negative pole of input voltage Ui, the copper electrode is connected with a thermocouple which is placed within a measurement range of an infrared thermometer, the infrared thermometer is connected with a computer through a data line, and the amplifying circuit is used for supplying power through a direct-current source. The local fast heating experimental device is used for local fast heating of the ultra-high temperature ceramic test piece.
Description
Technical field：
The experimental provision the present invention relates to a kind of novel super-high temperature ceramic test piece local is rapidly heated.
Background technology：
Hypersonic Weapon with hypersonic, high motor-driven remote precision strike as technical characteristics has become generation
Boundary's military affairs focus, will bring a revolution to future war concept and pattern, rant out not, and hypersonic aircraft goes out
Now extremely far-reaching influence is brought to human lives.With the fast development of China's Aerospace Technology, long-time can be carried out high
The re-entry space vehicle of supersonic flight becomes the emphasis of China's future aircraft, and hypersonic aircraft can effectively reduce defence
Response time, strengthens prominent anti-and anti-defence capability, expands flat pad scope, improves aircraft survival ability, fighting efficiency and
Efficiency, while hypersonicization also provides possibility to reach Global combat ability, weaponry is hypersonic in endoatmosphere
The time of flight also increased to several kiloseconds by current tens seconds.The world that hypersonic (Mach number >=5), long-time are on active service is past
Return aircraft, hypersonic aircraft and rocket propulsion system to be all badly in need of a kind of high temperature resistant, antioxidation, can protect at high temperature
The special material of holding force and chemical stability, therefore high temperature structural material change of the development and application under harsh operating conditions
Obtain extremely urgent.Due to boride (ZrB2、HfB2) with preferable mechanical property and thermophysical property, including high-melting-point (＞
3000 DEG C), high conductivity, high heat conductance, higher thermal shock resistance, so boride is higher than 2000 DEG C of thermal shock rings
The candidate material of the most prospect applied under border.Particularly, ZrB2There is in all UHTC materials minimum solid density, this
So that ZrB2Base ceramic material becomes the material of AEROSPACE APPLICATION most captivation, by composition of material, ZrB2Base ceramic material
Consistency, mechanical property, thermophysical property are obtained for and are significantly lifted, but its toughness of material cannot also be with metal material
Compare, this shortcoming limits the extensive application of UHTC.The function of active service is substituted or is partly substituted using superhigh temperature ceramic material
Property heat insulation material and structure, not only can reduce construction weight, can also increase substantially the performance of aircraft, superhigh temperature
Ceramic material as material family in important a member, be a kind of very promising high-temperature structural material, its importance is
A kind of aerospace craft design of new generation with sharp leading edge and smooth surface is provided to aerospace industry, with volume more
Little, quality is lighter, it is in hgher efficiency the characteristics of.Elevated temperature strength, antioxidation and heat shock resistance that superhigh temperature ceramic material has etc.
Combination property can be competent in including it is hypersonic long when flight, atmosphere reenter, Trans-atmospheric flight and rocket propulsion
The extreme environments such as system, which includes the various key positions such as aircraft nose cone, nose of wing, numbers of hot-side engine or portion using object
Part.
Most of material is very sensitive to thermal transient, often leads to strength of materials decay, and is possible to cause calamitous mistake
Effect, and for the material that long-time is on active service under hyperthermal environments, oxidation stability similarly merits attention, therefore superelevation
The anti-thermal shock of adiabator, antioxygenic property are to determine one of the key factor in its life-span.Non-ablative type heat insulation material mainly according to
Most of heat is fallen in mechanism radiation by passive type heat loss through radiation, and the heat of its radiation is directly proportional to the biquadratic of temperature.In gas
In dynamic heating process, structure temperature rises rapidly, experienced the process of thermal shock, after radiation balance temperature is reached, that is to say, that
Material radiation fall heat it is equal with incident heat after, be no longer influenced by the restriction of heat pulse duration, and can keep with material
The limiting temperature of its performance is directly related.Therefore based on hypersonic, motor-driven, the long-time Service Environment of height superhigh temperature non-ablative
How section bar material keeps its structural intergrity and reliability to be one highly important under high-temperature oxydation and complex load effect
Problem in science.Its content covers two levels, and material first resists the ability of thermal shock, followed by long term high temperature and complicated load
The evolution damaged under the conditions of lotus and material damage mechanism problem.Thermal shock resistance is not only special with the surface emissivity of material and oxidation
Property it is related, it is also directly related to the intensification of Service Environment, loading speed and extreme value.The essence of the thermal shock resistance of material is material
The ability that opposing crackle by caused by thermal stress is produced and extended, in the overall process of thermal shock destruction, material experience crack nucleation,
The formation and extension of fine crack, final each stage to destruction.In the starting stage, the nucleation of crackle is leading factor, and
The extension of crackle afterwards is leading factor.The intensity of material depends primarily on the quantity and size of internal defects, the sensitivity of defect
Property causes material to there is size-dependent during thermal shock.In the case where severe hot conditionss are applied to, although superhigh temperature is made pottery
Ceramic material can keep higher intensity at high temperature, but which can be cracked under the thermal shock conditions for having temperature change to cause,
And extend rapidly, so as to cause material damage, further result in structure member damage inactivation.It is crisp due to ceramic material itself
Property, ceramic material not only almost no plasticity, and the general poor heat conductivity of ceramic material, the stress gradient that temperature change causes are big；
Ceramic material under thermal shock conditions, as the thermal stress that anisotropic thermal expansion coefficient is caused can be up to 80MPa～100MPa.
Therefore, thermal shock cracking with damage be engineering ceramic material failure one of major way, and evaluation engineering ceramic material makes
With a kind of important performance indexes of performance, the thermal shock resistance of ceramic material is studied, rationally characterize UHTC thermal shock resistances
Influence factor and rule, be performance predictions of the UHTC under thermal shock environments and for prepare improve thermal shock resistance UHTC
Offer instructs tool to be of great significance.
The content of the invention：
The experimental provision it is an object of the invention to provide a kind of novel super-high temperature ceramic test piece local is rapidly heated, research ceramics
The thermal shock resistance of material, rationally characterizes influence factor and the rule of UHTC thermal shock resistances.
Above-mentioned purpose is realized by following technical scheme：
A kind of novel super-high temperature ceramic test piece local is rapidly heated experimental provision, and its composition includes：Computer 4, thermocouple
2nd, copper electrode 1, connects the voltage U after being exaggerated respectively on the right side of the left side on described copper electrode 10Positive pole and negative pole, it is described
Be exaggerated after voltage U0Positive pole and negative pole be connected the positive pole and negative pole of amplifying circuit, described amplifying circuit connection respectively
Input voltage UiPositive pole and negative pole；
The described connection thermocouple 2 of copper electrode 1, described thermocouple 2 are placed in the measurement range of infrared radiation thermometer 3,
Described infrared radiation thermometer 3 connects computer 4 by data wire；
Described amplifying circuit is powered by DC source.
A kind of described novel super-high temperature ceramic test piece local is rapidly heated experimental provision, and described DC source includes electricity
Voltage is passed to rectification circuit by wire by source transformator, described mains transformer, and voltage is led to by described rectification circuit
Cross wire and pass to filter circuit, voltage is passed to mu balanced circuit by wire by described transmission filter circuit, and described is steady
Voltage is passed to amplifying circuit by wire by volt circuit.
A kind of described novel super-high temperature ceramic test piece local is rapidly heated experimental provision, and described mains transformer passes through
Wire receives alternating voltage, and voltage is passed to bridge rectifier by wire by described alternating voltage；
One end and one end of resistance R of one end shunt capacitance C of described bridge rectifier, described bridge rectifier electricity
The other end on road is in parallel, the other end of described electric capacity C, diode DZOne end and resistance RLOne end；
The other end parallel diode D of described resistance RZThe other end and resistance RLThe other end.
Beneficial effect：
1. present invention is mainly applied to superhigh temperature ceramic material (UHTC) is in high temperature (1000 DEG C～3000 DEG C), thermal shock
Under the harsh conditions of (50 DEG C/s of ＞), internal ZrB2The thermal expansion and SiC between mismatches the thermal stress for producing much larger than temperature ladder
The thermal stress that degree causes, mismatching caused failure behaviour to thermal expansion carries out experimentation, it is necessary to device for quickly elevating temperature,
To reach the condition of thermal shock, so as to modified technique reduces the thermal expansion mismatch between matrix and Second Phase Particle, enter one
Step improves the crack growth resistance of material to improving security reliabilities of the UHTC under thermal shock environments, is the application of UHTC materials
Reliable foundation is provided.
2. the present invention can realize the 500 DEG C/s that is rapidly heated to superhigh temperature ceramic material, faster than traditional 1 DEG C/s of Muffle furnace
500 times, the thermal shock to test specimen is realized, and the excellent of local heating can be carried out by adjusting the distance between two pieces of copper electrodes
Point.
3. the present invention controls heating rate, is easy to carry out not superhigh temperature ceramic material test specimen by controlled output electric current
The research of thermal shock under same rate.
4. the superhigh temperature ceramic material (UHTC) of the present invention is locally rapidly heated experimental provision, is to realize material local heating
Thermal shock provides a kind of simple method.
5. the utilization of the present invention equipment can be to ZrB2Based ultra-high temperature ceramic test piece carries out local thermal shock test sign.
6. local heating's speed of the present invention reaches as high as 500 DEG C/s, and the mechanical property under thermal shock can be better achieved
Can research.
7. the test method of the present invention has preferable controllability, and has the advantages that low cost, test period are short.
Description of the drawings：
Accompanying drawing 1 is the structural representation of the present invention.
Accompanying drawing 2 is the structured flowchart of the amplifying circuit of the present invention.
Accompanying drawing 3 is the structured flowchart of the DC source of the present invention.
Accompanying drawing 4 is the DC source structure chart of the present invention.
Accompanying drawing 5 is the circuit structure diagram of the present invention.
Accompanying drawing 6 is the habit of painting figure of the single phase bridge type rectifier circu of the present invention.
Accompanying drawing 7 is the simplification figure of the single phase bridge type rectifier circu of the present invention.
Accompanying drawing 8 is the single phase bridge type rectifier circu oscillogram of the present invention.
Accompanying drawing 9 is the primitive form A figures of the filter circuit of the present invention.
Accompanying drawing 10 is the primitive form B figures of the filter circuit of the present invention.
Accompanying drawing 11 is the serial Feedback type mu balanced circuit figure of the present invention.
Accompanying drawing 12 is the multistage amplifier circuit block diagram of the present invention.
Accompanying drawing 13 is the block diagram of the integrated operational amplifier of the present invention.
Specific embodiment：
Embodiment 1
A kind of novel super-high temperature ceramic test piece local is rapidly heated experimental provision, and its composition includes：Computer 4, thermocouple
2nd, copper electrode 1, connects the positive pole and negative pole of the voltage U0 after being exaggerated respectively on the right side of the left side on described copper electrode 1, described
Be exaggerated after voltage U0Positive pole and negative pole be connected the positive pole and negative pole of amplifying circuit, described amplifying circuit connection respectively
Input voltage UiPositive pole and negative pole；
The described connection of copper electrode 1 thermocouple 2 (length of copper electrode is determined according to the size of experiment test specimen), described heat
Galvanic couple 2 is placed in the measurement range of infrared radiation thermometer 3, and described infrared radiation thermometer 3 connects computer 4 by data wire；
Described amplifying circuit is powered by DC source.
Embodiment 2
A kind of novel super-high temperature ceramic test piece local described in embodiment 1 is rapidly heated experimental provision, described unidirectional current
Source includes mains transformer, and voltage is passed to rectification circuit, described rectification circuit by wire by described mains transformer
Voltage is passed to into filter circuit by wire, voltage is passed to mu balanced circuit by wire by described transmission filter circuit,
Voltage is passed to amplifying circuit by wire by described mu balanced circuit.
Embodiment 3
A kind of novel super-high temperature ceramic test piece local described in embodiment 2 is rapidly heated experimental provision, and described power supply becomes
Depressor receives alternating voltage by wire, and voltage is passed to bridge rectifier by wire by described alternating voltage；
One end and one end of resistance R of one end shunt capacitance C of described bridge rectifier, described bridge rectifier electricity
The other end on road is in parallel, the other end of described electric capacity C, diode DZOne end and resistance RLOne end；
The other end parallel diode D of described resistance RZThe other end and resistance RLThe other end.
Using process：
The first step：First test specimen used by test is put in copper electrode 1.
Second step：Infrared radiation thermometer 3 is connected on computer 4 by data wire.
3rd step：By power on.
4th step：Power supply is pressurized to the two ends of copper electrode 1 via amplifying circuit after voltage signal is amplified.
5th step：Copper electrode 1 after pressurization is brought rapidly up thermocouple 2.
6th step：Thermocouple 2 is transferred to Temperature numerical in computer 4 by infrared radiation thermometer 3.
The concrete per part of DC source parses：
(1) operation principle of rectification circuit
Serial voltage regulation circuit can be replaced with 7815 type stabilivolts；In order to improve the utilization rate of transformator, reduce output
The pulsation of voltage, in small-power power, using it is most be single phase bridge type rectifier circu.
The composition and working principle of (a) circuit
As shown in Fig. 5,6,7, it is made up of single phase bridge type rectifier circu transformator and four diodes.Four diode groups
Into electric bridge form, therefore claim bridge rectifier.Fig. 7 is its simplified painting.
Work as u2For positive half cycle when, D1And D3Conducting, D2And D4Cut-off, will have electric current to flow through load R from top to bottomL, in load
RLOn obtain just lower negative voltage u0.Current path is represented by：
A→D1→RL→D3→B
Work as u2For negative half period when, D2And D4Conducting, D1And D3Cut-off, will have electric current to flow through load R from top to bottomL, in load
RLOn obtain just lower negative voltage u0.Current path is represented by：
B→D2→RL→D4→A
So, in u2Whole cycle, load RLThere is a direct voltage output of pulsation at two ends, therefore referred to as all wave rectification, ripple
Shape is as shown in Figure 8.
B () exports DC voltage and DC current
The load DC voltage and DC current of bridge rectifier output are the twices of halfwave rectifier.I.e.
Flow through load RLOn DC current be
C the parameter of () commutation diode is selected
In rectification circuit, because D1、D3And D2、D4Turn in turn, thus the average current I that every diode flows throughDOnly
For output current IoHalf.It is ± 10% in view of the fluctuation range of line voltage, so the maximal integer mass flow of diode is averagely electric
Stream IFSelection gist be
The Maximu reverse operating voltage U of diodeRMSelection gist be
(2) filter circuit
The output voltage of rectification circuit contains larger harmonic componentss, pulses larger, it is impossible to adapt to most of electronic circuits
And the needs of equipment, also need the DC voltage of pulsation is changed into smooth DC voltage using filter circuit.Capacitor C is to direct current
Open circuit, it is little to AC impedance, so C should be connected in parallel on load two ends.Inducer L is little to DC impedance, big to AC impedance, because
This L should with load in series, as shown in Fig. 9,10.
(3) mu balanced circuit
As shown in figure 11, the audion U in parallel of voltage input end U1BColelctor electrode c and resistance R one end, described electricity
The other end parallel diode D of resistance RZOne end and amplifier A positive input terminal；
Described diode DZOther end parallel resistance R2One end and resistance RLOne end, described amplifier A's is negative
Input connects rheostat RPThe 3rd end, the outfan connecting triode U of described amplifier ABBase stage b, three described poles
Pipe UBEmitter e parallel resistance R1One end and resistance RLThe other end, described resistance R1The other end connection rheostat RP
One end, described rheostat RPThe other end connection rheostat R2The other end.
Reference voltage circuit, compare amplifying circuit, adjustment pipe and sample circuit be the basic of serial Feedback type mu balanced circuit
Ingredient.Wherein, the core that pipe is circuit, U are adjustedCEWith UIWith load change and produce change to stablize UO.Benchmark electricity
Pressure is to weigh the whether stable standard of electric power output voltage, it is desirable to strictly keep constant, not by input voltage, load current and temperature
The impact of the factors such as degree.
2nd, amplification circuits
The ac equivalent circuit of one N level amplifying circuit can use box indicating shown in Figure 12.
As shown in Figure 9, in amplifying circuit, the output voltage of prime is exactly the input voltage of rear class, i.e., So, the voltage amplification factor of multistage amplifier circuit is：
Formula (4) shows that the voltage amplification factor of multistage amplifier circuit is equal to and constitutes its amplifying circuit voltage amplifications at different levels
The product of multiple.For the first order to N-1 levels, when the amplification per one-level should be using rear class input resistance as load
Amplification.
According to the definition of amplifying circuit input resistance, the input resistance of multistage amplifier circuit is exactly the input resistance of the first order
I.e.
Ri=Ri1 (5)
According to the definition of amplifying circuit output resistance, the output resistance of multistage amplifier circuit is exactly the output electricity of afterbody
Resistance, i.e.,
Ro=RoN (6)
It should be noted that when common-collector amplifier is used as input stage, its input resistance is loaded with which, i.e., with the second level
Input resistance is relevant；And when common-collector amplifier is used as output stage, its output resistance and its singal source resistance, i.e., with inverse
The output resistance of the second level is relevant.
When the output waveform of multistage amplifier circuit produces distortion, the distortion first occurred at which rank of should be determined first, so
Judge again afterwards to generate saturation distortion or cutoff distortion.
In direct-coupling amplifying circuit, as front stage is joined directly together, the drift voltage of previous stage can same useful signal
Next stage being sent to together, and being amplified step by step, so that it is useful signal to be difficult what is distinguished in outfan sometimes, what is
Drift voltage, causes amplifying circuit cisco unity malfunction.
3rd, integrated operational amplifier
Integrated operational amplifier (abbreviation amplifier) is a direct-coupled high gain amplifier.It is Analogous Integrated Electronic Circuits
Most important kind, is widely used in various electronic circuits.It can amplify the alternating voltage of direct current to certain frequency scope.
The mathematical operations such as the operational amplifier of early stage is mainly used to complete to add, subtracts, multiplication and division, differential, integration, logarithm and index, its title
Come therefrom.Amplifier is developed so far, and its range of application can realize linear processes far beyond mathematical operation scope
Deng several functions, while amplifier is also the important component part of some other Analogous Integrated Electronic Circuits, practicality is made it very strong
Basic element circuit.
Integrated operational amplifier is made up of three amplifying elements.Its input stage is differential amplifier circuit, and intergrade is high
Gain amplifying circuit, output stage are complementary push-pull circuits.There are some auxiliary links, such as bias current sources, electricity in addition
Position off-centre circuit etc..The block diagram of integrated operational amplifier is as shown in figure 13.
The input stage of amplifier will use high performance differential amplifier circuit, and it has very strong inhibitory action to common-mode signal,
Therefore temperature drift can be suppressed.Interstage amplifier section provides very high voltage gain, to ensure the operational precision of amplifier, the electricity of intergrade
Road form mostly is difference channel and the high gain amplifier with active load.Complementary output level is by two kinds of polarity of PNP and NPN
Audion or composite pipe sections are into obtain the output voltage or electric current of positive and negative two polarity.In order to stablize static works at different levels
Point, operational amplifier adopt bias current sources and provide static working current for each amplifier stage.
Certainly, described above is not limitation of the present invention, and the present invention is also not limited to the example above, this technology neck
Change, remodeling, addition or replacement that the technical staff in domain is made in the essential scope of the present invention, should also belong to the present invention's
Protection domain.
Claims (3)
1. a kind of novel super-high temperature ceramic test piece local is rapidly heated experimental provision, and its composition includes：Computer (4), thermocouple
(2), copper electrode (1), is characterized in that：Connect the voltage U after being exaggerated on the right side of left side on described copper electrode (1) respectively0's
Positive pole and negative pole, it is described be exaggerated after voltage U0Positive pole and negative pole be connected the positive pole and negative pole of amplifying circuit, institute respectively
The amplifying circuit connection input voltage U for statingiPositive pole and negative pole；
Described copper electrode (1) connection thermocouple (2), described thermocouple (2) are placed on the measurement range of infrared radiation thermometer (3)
Interior, described infrared radiation thermometer (3) connects computer (4) by data wire；
Described amplifying circuit is powered by DC source.
2. a kind of novel super-high temperature ceramic test piece local according to claim 1 is rapidly heated experimental provision, it is characterized in that：
Described DC source includes mains transformer, and voltage is passed to rectification circuit by wire by described mains transformer, institute
Voltage is passed to filter circuit by wire by the rectification circuit stated, and voltage is transmitted by described transmission filter circuit by wire
To mu balanced circuit, voltage is passed to amplifying circuit by wire by described mu balanced circuit.
3. a kind of novel super-high temperature ceramic test piece local according to claim 2 is rapidly heated experimental provision, it is characterized in that：
Described mains transformer receives alternating voltage by wire, and it is whole that voltage is passed to bridge-type by wire by described alternating voltage
Current circuit；
One end and one end of resistance R of one end shunt capacitance C of described bridge rectifier, described bridge rectifier
The other end is in parallel, the other end of described electric capacity C, diode DZOne end and resistance RLOne end；
The other end parallel diode D of described resistance RZThe other end and resistance RLThe other end.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610880912.1A CN106644799A (en) | 2016-10-09 | 2016-10-09 | Local fast heating experimental device for novel ultra-high temperature ceramic test piece |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201610880912.1A CN106644799A (en) | 2016-10-09 | 2016-10-09 | Local fast heating experimental device for novel ultra-high temperature ceramic test piece |
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| CN106644799A true CN106644799A (en) | 2017-05-10 |
Family
ID=58855030
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| CN201610880912.1A Pending CN106644799A (en) | 2016-10-09 | 2016-10-09 | Local fast heating experimental device for novel ultra-high temperature ceramic test piece |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109696371A (en) * | 2019-02-28 | 2019-04-30 | 中国科学院力学研究所 | A kind of flame thermal shock test observation device and observation method |
| CN110018077A (en) * | 2019-04-16 | 2019-07-16 | 英利能源（中国）有限公司 | A kind of solar double-glass assemblies resisting temperature impact test methods |
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| KR20140083207A (en) * | 2012-12-26 | 2014-07-04 | 한국기계연구원 | Ultra high temprature shock and oxidation test equipment using laser beam |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109696371A (en) * | 2019-02-28 | 2019-04-30 | 中国科学院力学研究所 | A kind of flame thermal shock test observation device and observation method |
| CN110018077A (en) * | 2019-04-16 | 2019-07-16 | 英利能源（中国）有限公司 | A kind of solar double-glass assemblies resisting temperature impact test methods |
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