CN106637395A - Novel charging method for filling bar-shaped materials - Google Patents
Novel charging method for filling bar-shaped materials Download PDFInfo
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- CN106637395A CN106637395A CN201610848191.6A CN201610848191A CN106637395A CN 106637395 A CN106637395 A CN 106637395A CN 201610848191 A CN201610848191 A CN 201610848191A CN 106637395 A CN106637395 A CN 106637395A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
Abstract
The invention discloses a novel charging method for filling bar-shaped materials. The method comprises the steps of bottoming, bottom protection, bottom protection filling, first layer charging, second layer charging, upper-layer material filling, vallum and flaw-piece setting, top material filling and the like. By the method, crystal bricks and crystal bars are reasonably distributed, the flaw-piece setting is optimized, the charging quantity is effectively increased by 6 percent to 8 percent, and the silicon leakage rate is greatly reduced.
Description
Technical field
The present invention relates to polycrystalline silicon used for solar battery ingot casting charging field, particularly a kind of for the new of rod-like material filling
Type loading method.
Background technology
Polysilicon, is a kind of form of elemental silicon., when solidifying under the conditions of supercooling, silicon atom is with Buddha's warrior attendant for the elemental silicon of melting
Into many nucleus, such as these nucleus grow up to the different crystal grain of high preferred orientation to stone lattice morphologic arrangement, then these crystal grain combine,
Just crystallize into polysilicon.Value：Can be seen that its development trend is monocrystalline from the evolution of current international solar cell
Silicon, polysilicon, banding silicon, thin-film material（Including microcrystalline silicon film, compound base film and dye film）.
When polysilicon is produced, ingot casting need to be carried out, most of equipment are mostly fed using G6 equipment, original charging
Method charge is few and unreasonable, and the requirement to the error that feeds is higher, the phenomenon of leakage silicon easily occurs.
The content of the invention
For the problems referred to above, the invention discloses a kind of new loading method for rod-like material filling.
To solve above technical problem, the technical scheme that the present invention is provided is:
A kind of new loading method for rod-like material filling, it is characterised in that comprise the following steps：
1st, it is rebasing：In one layer of seed crystal of ingot casting crucible bottom tiling；
2nd, river bottom protection：On seed crystal, tile one layer of afterbody reclaimed materials, and the afterbody reclaimed materials is that its quantity is 36, vertical in 6*6
Horizontally-arranged cloth；
3rd, river bottom protection filling：Gap is left between the periphery and ingot casting crucible of afterbody reclaimed materials, broken polycrystalline is sprinkled in gap, and made
The upper surface of broken polycrystalline and the upper surface level of afterbody reclaimed materials；
4th, ground floor charging：The ground floor charging includes following 4 steps：（1）Ground floor shield is put along ingot casting crucible inwall
Side flaw-piece, the ground floor safe edge flaw-piece is close to ingot casting crucible inwall, puts the ground floor safe edge flaw-piece for completing and is rectangle row
Cloth；（2）Brilliant brick and ground floor crystal bar are put, the quantity of the brilliant brick is 4, and ground floor safe edge flaw-piece is placed in respectively is in
At rectangular 4 angles, the ground floor crystal bar is placed in the rectangular inside that ground floor safe edge flaw-piece is in；（3）Will be also
Former polycrystalline block is placed in ground floor crystal bar top, and ground floor is reduced into many grain of crystallization material fillings and ground floor safe edge flaw-piece, crystalline substance
In gap between brick and ground floor crystal bar, the ground floor reduce many grain of crystallization material by it is big-in-little order fills out from bottom to top
Fill, until it reaches ground floor crystal bar height；
5th, second layer charging：（1）Second layer safe edge flaw-piece is put along ingot casting crucible inwall, the second layer safe edge flaw-piece is close to casting
Ingot crucible internal walls, positioned at ground floor safe edge flaw-piece top, put the second layer safe edge flaw-piece for completing and are rectangle arrangement；（2）Will
Second layer crystal bar is placed in reduction polycrystalline block top；（3）By the second layer reduce many grain of crystallization material be filled in ground floor safe edge flaw-piece,
In gap between second layer safe edge flaw-piece, reduction polycrystalline block and second layer crystal bar, the second layer reduces many grain of crystallization material and presses
Greatly-in-little order fills from bottom to top, until it reaches and second layer crystal bar height, foundry alloy, the weight of foundry alloy are sprinkled thereon
Measure as 300g；
6th, upper layer material filling：After the completion of second layer charging, third layer is continued to fill up in second layer charging and reduces many grain of crystallization material, and
By it is big-in-little order fills from bottom to top, until it reaches second layer safe edge flaw-piece height；
7th, vallum flaw-piece is arranged and liftout filling：After the completion of upper layer material filling, vallum flaw-piece is inserted on upper layer material, vallum flaw-piece
Arrangement is rectangle, gap is left between its outer wall and ingot casting crucible, and by broken poly-filled, filling position and ingot casting crucible
The spacing of upper surface be 3cm, the rectangular internal that vallum flaw-piece is in by the 4th layer of many grain of crystallization material of reduction, by it is big-in-it is little
Order fill from bottom to top, until it reaches vallum flaw-piece height, now ingot casting crucible filler is completed.
A kind of above-mentioned new loading method for rod-like material filling, wherein, the thickness of the second layer safe edge flaw-piece
Less than the thickness of ground floor safe edge flaw-piece.
A kind of above-mentioned new loading method for rod-like material filling, wherein, the ground floor reduce many grain of crystallization material, the
Two layers of many grain of crystallization material of reduction, third layer reduce many grain of crystallization material and many grain of crystallization material of the 4th layer of reduction with diameter carry out greatly-in-it is little
Distinguish, the diameter that many grain of crystallization material are reduced greatly is interval for 7 ~ 10CM, it is 5 ~ 7CM that the diameter of many grain of crystallization material of middle reduction is interval, little reduction
It is 3 ~ 5CM that the diameter of many grain of crystallization material is interval.
A kind of above-mentioned new loading method for rod-like material filling, wherein, the vallum flaw-piece protrudes from ingot casting earthenware
Crucible upper surface, projecting height is 5 ~ 7CM.
A kind of above-mentioned new loading method for rod-like material filling, wherein, the foundry alloy is silicon boron foundry alloy.
Beneficial effects of the present invention are：
It is disclosed by the invention it is a kind of for rod-like material filling new loading method, including rebasing, river bottom protection, river bottom protection filling, first
Layer charging, second layer charging, upper layer material filling, vallum flaw-piece are arranged and multiple steps such as liftout filling, the brilliant brick of reasonable layout
And crystal bar, flaw-piece setting is optimized, the charge of 6%-8% is not only effectively increased, while leaking substantially reducing for silicon rate.
Description of the drawings
Fig. 1 ingot casting crucibles middle part longitudinal section sectional view.
When Fig. 2 ground floors feed, ingot casting crucible corner top view.
Specific embodiment
A kind of new loading method for rod-like material filling, it is characterised in that comprise the following steps：
1st, it is rebasing：In one layer of seed crystal 2 of the bottom of ingot casting crucible 1 tiling；
2nd, river bottom protection：On seed crystal 2, tile one layer of afterbody reclaimed materials 3, and its quantity is 36, is arranged in length and breadth in 6*6；
3rd, river bottom protection filling：Gap is left between the periphery and ingot casting crucible 1 of afterbody reclaimed materials 3, broken polycrystalline 4 is sprinkled in gap,
And make the upper surface of broken polycrystalline 4 and the upper surface level of afterbody reclaimed materials 3；
4th, ground floor charging：The ground floor charging includes following 4 steps：（1）Ground floor shield is put along the inwall of ingot casting crucible 1
Side flaw-piece 5, the ground floor safe edge flaw-piece 5 is close to the inwall of ingot casting crucible 1, puts the ground floor safe edge flaw-piece 5 for completing in rectangular
Shape is arranged；（2）Brilliant brick 6 and ground floor crystal bar 7 are put, the quantity of the brilliant brick 6 is 4, and ground floor safe edge side is placed in respectively
At rectangular 4 angles that skin 5 is in, the ground floor crystal bar 7 be placed in that ground floor safe edge flaw-piece 5 is in it is rectangular in
Portion；（3）Reduction polycrystalline block 8 is placed in into the top of ground floor crystal bar 7, and ground floor is reduced into many grain of crystallization material 9 and filled and first
In gap between layer safe edge flaw-piece 5, brilliant brick 6 and ground floor crystal bar 7, the ground floor reduce many grain of crystallization material 9 by it is big-in-it is little
Order fill from bottom to top, until it reaches the height of ground floor crystal bar 7；
5th, second layer charging：（1）Second layer safe edge flaw-piece 10, the second layer safe edge flaw-piece 10 are put along the inwall of ingot casting crucible 1
It is close to the inwall of ingot casting crucible 1, positioned at the top of ground floor safe edge flaw-piece 5, puts the second layer safe edge flaw-piece 10 for completing and be rectangle
Arrangement；（2）Second layer crystal bar 11 is placed in into the top of reduction polycrystalline block 8；（3）The second layer is reduced into many grain of crystallization material 12 to be filled in
It is described in gap between ground floor safe edge flaw-piece 5, second layer safe edge flaw-piece 10, reduction polycrystalline block 8 and second layer crystal bar 11
The second layer reduce many grain of crystallization material 12 by it is big-in-little order fills from bottom to top, until it reaches the height of second layer crystal bar 11,
Foundry alloy is sprinkled thereon, and the weight of foundry alloy is 300g；
6th, upper layer material filling：After the completion of second layer charging, continue to fill up third layer in second layer charging and reduce many grain of crystallization material 13,
And by it is big-in-little order fills from bottom to top, until it reaches the height of second layer safe edge flaw-piece 10；
7th, vallum flaw-piece is arranged and liftout filling：After the completion of upper layer material filling, vallum flaw-piece 14 is inserted on upper layer material, vallum side
Skin 14 is rectangle arrangement, and gap is left between its outer wall and ingot casting crucible 1, and is filled by broken polycrystalline 4, filling position with casting
The spacing of the upper surface of ingot crucible 1 is 3cm, and the rectangular internal that vallum flaw-piece 14 is in reduces many grain of crystallization material by the 4th layer
15, by it is big-in-little order fills from bottom to top, until it reaches the height of vallum flaw-piece 14, now the filler of ingot casting crucible 1 is completed.
A kind of above-mentioned new loading method for rod-like material filling, wherein, the foundry alloy is silicon boron foundry alloy.
The above, the only present invention preferably specific embodiment, but protection scope of the present invention is not limited thereto,
Any those familiar with the art the invention discloses technical scope in, the change or replacement that can be readily occurred in,
All should cover within the scope of the present invention.Therefore, protection scope of the present invention should be with the protection domain of claims
It is defined.
Claims (5)
1. it is a kind of for rod-like material filling new loading method, it is characterised in that comprise the following steps：
It is step 1, rebasing：In one layer of seed crystal of ingot casting crucible bottom tiling；
Step 2, river bottom protection：On seed crystal, tile one layer of afterbody reclaimed materials, and the afterbody reclaimed materials is that its quantity is 36, in 6*
6 arrange in length and breadth；
Step 3, river bottom protection filling：Gap is left between the periphery and ingot casting crucible of afterbody reclaimed materials, broken polycrystalline is sprinkled in gap,
And make the upper surface of broken polycrystalline and the upper surface level of afterbody reclaimed materials；
Step 4, ground floor charging：The ground floor charging includes following 4 steps：（1）First is put along ingot casting crucible inwall
Layer safe edge flaw-piece, the ground floor safe edge flaw-piece is close to ingot casting crucible inwall, puts the ground floor safe edge flaw-piece for completing in rectangular
Shape is arranged；（2）Brilliant brick and ground floor crystal bar are put, the quantity of the brilliant brick is 4, and ground floor safe edge flaw-piece institute is placed in respectively
At rectangular 4 angles for being in, the ground floor crystal bar is placed in the rectangular inside that ground floor safe edge flaw-piece is in；（3）
Reduction polycrystalline block is placed in into ground floor crystal bar top, and ground floor is reduced into many grain of crystallization material fillings and ground floor safe edge side
In gap between skin, brilliant brick and ground floor crystal bar, the ground floor reduce many grain of crystallization material by it is big-in-little order is from lower
Upper filling, until it reaches ground floor crystal bar height；
Step 5, second layer charging：（1）Second layer safe edge flaw-piece is put along ingot casting crucible inwall, the second layer safe edge flaw-piece is tight
Patch ingot casting crucible inwall, positioned at ground floor safe edge flaw-piece top, puts the second layer safe edge flaw-piece for completing and is rectangle arrangement；
（2）Second layer crystal bar is placed in into reduction polycrystalline block top；（3）The second layer is reduced into many grain of crystallization material and is filled in ground floor safe edge
In gap between flaw-piece, second layer safe edge flaw-piece, reduction polycrystalline block and second layer crystal bar, the second layer reduces many grain of crystallizations
Material by it is big-in-little order fills from bottom to top, until it reaches second layer crystal bar height, foundry alloy, foundry alloy are sprinkled thereon
Weight be 300g；
Step 6, upper layer material filling：After the completion of second layer charging, continue to fill up third layer in second layer charging and reduce many grain of crystallizations
Material, and by it is big-in-little order fills from bottom to top, until it reaches second layer safe edge flaw-piece height；
Step 7, vallum flaw-piece are arranged and liftout filling：After the completion of upper layer material filling, vallum flaw-piece is inserted on upper layer material, vallum
Flaw-piece is rectangle arrangement, leaves gap between its outer wall and ingot casting crucible, and by broken poly-filled, filling position and ingot casting
The spacing of the upper surface of crucible is 3cm, the rectangular internal that vallum flaw-piece is in by the 4th layer of many grain of crystallization material of reduction, by it is big-
In-little order fills from bottom to top, until it reaches vallum flaw-piece height, now ingot casting crucible filler is completed.
2. a kind of new loading method for rod-like material filling as claimed in claim 1, it is characterised in that the second layer
Thickness of the thickness of safe edge flaw-piece less than ground floor safe edge flaw-piece.
3. a kind of new loading method for rod-like material filling as claimed in claim 1, it is characterised in that the ground floor
Reduce many grain of crystallization material, the second layer and reduce many grain of crystallization material, third layer and reduce many grain of crystallization material and many grain of crystallization material of the 4th layer of reduction with diameter
Size carry out greatly-in-little differentiation, the diameter that many grain of crystallization material are reduced greatly is interval for 7 ~ 10CM, the diameter region of many grain of crystallization material of middle reduction
Between be 5 ~ 7CM, it is 3 ~ 5CM that the diameter of many grain of crystallization material of little reduction is interval.
4. a kind of new loading method for rod-like material filling as claimed in claim 1, it is characterised in that the vallum side
Skin protrudes from ingot casting crucible upper surface, and projecting height is 5 ~ 7CM.
5. a kind of new loading method for rod-like material filling as claimed in claim 1, wherein, the foundry alloy is silicon boron
Foundry alloy.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610848191.6A CN106637395A (en) | 2016-09-26 | 2016-09-26 | Novel charging method for filling bar-shaped materials |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610848191.6A CN106637395A (en) | 2016-09-26 | 2016-09-26 | Novel charging method for filling bar-shaped materials |
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| CN106637395A true CN106637395A (en) | 2017-05-10 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201610848191.6A Pending CN106637395A (en) | 2016-09-26 | 2016-09-26 | Novel charging method for filling bar-shaped materials |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109811408A (en) * | 2019-03-26 | 2019-05-28 | 西安华晶电子技术股份有限公司 | Application of the silicon powder in polycrystalline silicon ingot casting preparation |
| CN110578167A (en) * | 2019-10-15 | 2019-12-17 | 包头美科硅能源有限公司 | Charging method for protecting crucible side wall coating |
| CN113430645A (en) * | 2021-06-25 | 2021-09-24 | 宁夏协鑫晶体科技发展有限公司 | Charging method for Czochralski single crystal |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203653740U (en) * | 2013-12-29 | 2014-06-18 | 西安华晶电子技术股份有限公司 | High efficiency high capacity charging structure for purifying polycrystalline silicon |
| CN104593862A (en) * | 2015-01-30 | 2015-05-06 | 扬州荣德新能源科技有限公司 | Loading method of high-efficiency crucible for producing polycrystalline silicon |
| CN105239151A (en) * | 2015-09-10 | 2016-01-13 | 上海超硅半导体有限公司 | Material loading method of polycrystal silicon |
-
2016
- 2016-09-26 CN CN201610848191.6A patent/CN106637395A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203653740U (en) * | 2013-12-29 | 2014-06-18 | 西安华晶电子技术股份有限公司 | High efficiency high capacity charging structure for purifying polycrystalline silicon |
| CN104593862A (en) * | 2015-01-30 | 2015-05-06 | 扬州荣德新能源科技有限公司 | Loading method of high-efficiency crucible for producing polycrystalline silicon |
| CN105239151A (en) * | 2015-09-10 | 2016-01-13 | 上海超硅半导体有限公司 | Material loading method of polycrystal silicon |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109811408A (en) * | 2019-03-26 | 2019-05-28 | 西安华晶电子技术股份有限公司 | Application of the silicon powder in polycrystalline silicon ingot casting preparation |
| CN110578167A (en) * | 2019-10-15 | 2019-12-17 | 包头美科硅能源有限公司 | Charging method for protecting crucible side wall coating |
| CN113430645A (en) * | 2021-06-25 | 2021-09-24 | 宁夏协鑫晶体科技发展有限公司 | Charging method for Czochralski single crystal |
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Application publication date: 20170510 |