CN106630675B - A kind of preparation method of comprehensive broadband AR - Google Patents
A kind of preparation method of comprehensive broadband AR Download PDFInfo
- Publication number
- CN106630675B CN106630675B CN201611099663.9A CN201611099663A CN106630675B CN 106630675 B CN106630675 B CN 106630675B CN 201611099663 A CN201611099663 A CN 201611099663A CN 106630675 B CN106630675 B CN 106630675B
- Authority
- CN
- China
- Prior art keywords
- sio
- sol
- film
- colloidal sol
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
- C03C17/3411—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials
- C03C17/3417—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions with at least two coatings of inorganic materials all coatings being oxide coatings
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2217/00—Coatings on glass
- C03C2217/20—Materials for coating a single layer on glass
- C03C2217/21—Oxides
- C03C2217/213—SiO2
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
- Chemically Coating (AREA)
Abstract
The invention belongs to optical film materials fields, and in particular to a kind of preparation method of comprehensive broadband AR.This method sol-gel method dip-coating method plated film is successively plated using polyacrylic acid as template and the SiO of the five layers of 50nm of wall thickness not etc. in glass surface2Ball film, every thin film are stablized by 100 DEG C of constant temperature oven constant temperature 2h, form SiO in glass surface2Template agent removing is removed in the film layer that particle wall thickness is gradually reduced, high-temperature roasting, obtains the broadband AR for having comprehensive antireflective in 350-1600nm.
Description
Technical field
The invention belongs to optical film materials fields, and in particular to a kind of preparation method of comprehensive broadband AR.
Background technique
For the solar components of photovoltaic or photo-thermal, the light transmission of photoelectric conversion efficiency or photothermal conversion efficiency to sunlight
The requirement of rate is very sensitive, the system being made of thousands of identical solar components, even if the absorption increase by 1% of sunlight, right
The influence of the power of whole system is also huge.Single layer or multicoating technology, photovoltaic glass surface at least have 8%
Incident light can not be utilized by reflection, and in 70 degree of angle incidence, reflectivity increases to 27%, be can not achieve and filled to solar energy
Divide and utilizes.
Increasingly serious in current Global Environmental Problems, non-renewable energy resources are reduced year by year, and photovoltaic industry efficiency needs to improve,
Photovoltaic glass in use, does not require nothing more than and prepares the antireflective film with broadband light transmittance, obtain solar energy most
Big utilization, but also require that still there is wide band antireflective effect in sunlight different incidence angles.
Summary of the invention
The present invention provides a kind of preparation methods of comprehensive broadband AR:
Using sol-gel method, using tetraethyl orthosilicate as silicon source, dehydrated alcohol be solvent, ammonium hydroxide is catalyst, preparation
Obtain solid SiO2Colloidal sol；Using tetraethyl orthosilicate as raw material, polyacrylic acid be template, dehydrated alcohol is solvent, ammonia
Water is catalyst, be prepared particle size it is uniform, using polyacrylic acid as template and the various SiO of wall thickness not etc.2Colloidal sol；
With dehydrated alcohol, H2O, adhesive SiO is prepared in the concentrated hydrochloric acid that mass concentration is 37%, ethyl orthosilicate2Colloidal sol；It will be above-mentioned
After the classification mixing of gained colloidal sol, by dipping-pulling method plated film and hot setting layer by layer, removed template method is finally roasted,
The specific preparation process of above scheme are as follows:
(1) by 114mL dehydrated alcohol, 7.12mL mass concentration be 28% ammonium hydroxide in beaker, 30 DEG C of stirring in water bath are equal
The ethyl orthosilicate of 4.0mL is added dropwise after even, reflux obtains the solid of 50nm except the pH value of ammonia to system is 7 after reacting 6h
SiO2Colloidal sol,
By 860g dehydrated alcohol, 36gH2O, for the concentrated hydrochloric acid that 0.2g mass concentration is 37% in beaker, 30 DEG C of stirring in water bath are equal
After even, 104g ethyl orthosilicate is added dropwise, reflux obtains adhesive SiO except the pH value of ammonia to system is 7 after reacting 6h2It is molten
Glue,
By above-mentioned adhesive SiO2Colloidal sol and solid SiO2Colloidal sol is uniformly mixed, and obtains the plating film sol of bottom film；
(2) under room temperature (25 DEG C, similarly hereinafter), a certain amount of polyacrylic acid (PAA, Mw ≈ 5000) is dissolved in 6mL mass concentration
To be slowly added to 120mL dehydrated alcohol along walls of beaker in the case where being vigorously stirred, being mixed evenly in 28% ammonium hydroxide
Afterwards, a certain amount of ethyl orthosilicate is added dropwise into above-mentioned mixed liquor every 10min, is added dropwise 5 times, continues at room temperature violent altogether
It flows back after stirring 10h except the pH value of ammonia to colloidal sol is 7,
Wherein, polyacrylic acid is added in the form of solid content is the lotion of 30wt%,
By controlling the amount ratio of polyacrylic acid and ethyl orthosilicate, preparing partial size respectively is 50nm, using PAA as mould
The SiO of plate, wall thickness not etc. (wall thickness is respectively 18nm, 12.5nm, 8.5nm, 6nm)2The colloidal sol of particle,
Equally by 860g dehydrated alcohol, 36gH2O, the concentrated hydrochloric acid that 0.2g mass concentration is 37% in beaker, stir by 30 DEG C of water-baths
After mixing uniformly, 104g ethyl orthosilicate is added dropwise, reflux obtains adhesive except the pH value of ammonia to system is 7 after reacting 6h
SiO2Colloidal sol,
By above-mentioned adhesive SiO2The colloidal sol SiO different with wall thickness respectively2Colloidal sol is uniformly mixed, and obtains various upper layers
The plating film sol of film；
(3) the plating film sol of bottom film obtained in one layer of step (1), drying are first coated with using czochralski method in matrix surface
Then at thereon according to SiO after solidification2The sequence that particle wall thickness is gradually reduced successively is coated in step (2) using czochralski method and is obtained
The plating film sol and baking and curing one by one of topmost thin film realize layer-by-layer hollow SiO finally by roasting removed template method2
The cavity volume of particle is gradually increased, and the refractive index of each layer is caused to gradually become smaller, to realize the gradual change of refractive index, is obtained
300~1600nm wave band average transmittance reaches 98.56%, at 506nm, 1230~1600nm light transmittance be up to 99.13%,
And in the comprehensive antireflective film with wide band antireflective,
Wherein, the high borosilicate glass of choice of the substrates cleaning,
The rate of pulling to bottom film plating film sol is 160mm/min, and drying operation is to solidify 2h at 100 DEG C, film forming
Refractive index afterwards in 1.46-1.48,
As preferred: the SiO for being 18nm to first layer wall thickness2The rate of pulling of the plating film sol of particle is 160mm/min,
Drying operation is to solidify 2h at 100 DEG C, the refractive index after film forming in 1.40-1.42,
The SiO for being 12.5nm to second layer wall thickness2The rate of pulling of the plating film sol of particle is 160mm/min, drying behaviour
As, solidify 2h at 100 DEG C, the refractive index after film forming in 1.36-1.38,
The SiO for being 8.5nm to third layer wall thickness2The rate of pulling of the plating film sol of particle is 160mm/min, drying operation
For, solidify 2h at 100 DEG C, the refractive index after film forming in 1.30-1.32,
The SiO for being 6nm to the 4th layer of wall thickness2The rate of pulling of the plating film sol of particle is 160mm/min, drying operation
For, solidify 2h at 100 DEG C, the refractive index after film forming in 1.21-1.23,
Baking operation is that 2h is calcined in 550 DEG C of Muffle furnaces, and heating rate is 2~3 DEG C per minute.
Detailed description of the invention
Fig. 1 is the film layer structure schematic diagram of the antireflective film prepared in embodiment 1.
Fig. 2 is antireflective film prepared in embodiment 1 when incidence angle changes, and ultraviolet-visible-near-infrared is divided light
The contrast schematic diagram for the light transmittance that degree measurement tries.
Specific embodiment
Embodiment 1
(1) by 114mL dehydrated alcohol, 7.12mL mass concentration be 28% ammonium hydroxide in beaker, 30 DEG C of stirring in water bath are equal
The ethyl orthosilicate of 4.0mL is added dropwise after even, reflux obtains the solid of 50nm except the pH value of ammonia to system is 7 after reacting 6h
SiO2Colloidal sol adjusts SiO2Concentration is 1.6wt%,
By 860g dehydrated alcohol, 36gH2O, for the concentrated hydrochloric acid that 0.2g mass concentration is 37% in beaker, 30 DEG C of stirring in water bath are equal
After even, 104g ethyl orthosilicate is added dropwise, reflux obtains adhesive SiO except the pH value of ammonia to system is 7 after reacting 6h2It is molten
Glue,
By above-mentioned adhesive SiO2Colloidal sol and solid SiO2Colloidal sol presses SiO2It is uniformly mixed, obtains for the molar ratio of 1:9
Bottom film A plates film sol；
(2) at room temperature, 0.12g polyacrylic acid (PAA, Mw=5000) is dissolved in the ammonium hydroxide that 6mL mass concentration is 28%,
It is slowly added to 120mL dehydrated alcohol along walls of beaker in the case where being vigorously stirred, it is upward every 10min after being mixed evenly
It states and 0.4ml ethyl orthosilicate is added dropwise in mixed liquor, be added dropwise 5 times altogether, continue reflux after being vigorously stirred 10h at room temperature and remove ammonia extremely
The pH value of colloidal sol be 7, obtain partial size be 50nm, the colloidal sol using PAA as template, wall thickness for the silicon dioxide granule of 18nm, adjustment
SiO2Concentration is 1.5wt%,
Equally by 860g dehydrated alcohol, 36gH2O, the concentrated hydrochloric acid that 0.2g mass concentration is 37% in beaker, stir by 30 DEG C of water-baths
After mixing uniformly, 104g ethyl orthosilicate is added dropwise, reflux obtains adhesive except the pH value of ammonia to system is 7 after reacting 6h
SiO2Colloidal sol,
By above-mentioned adhesive SiO2Colloidal sol and the above-mentioned SiO containing template2The colloidal sol of particle presses SiO2It is mixed for the molar ratio of 1:9
It closes uniformly, obtains plated film sol B；
At room temperature, 0.15g polyacrylic acid (PAA, Mw=5000) is dissolved in the ammonium hydroxide that 6mL mass concentration is 28%,
It is slowly added to 120mL dehydrated alcohol along walls of beaker in the case where being vigorously stirred, after being mixed evenly, every 10min to above-mentioned
0.2ml ethyl orthosilicate is added dropwise in mixed liquor, is added dropwise 5 times altogether, continues to be vigorously stirred after 10h reflux at room temperature except ammonia is to molten
The pH value of glue be 7, obtain partial size be 50nm, the colloidal sol using PAA as template, wall thickness for the silicon dioxide granule of 12.5nm, adjustment
SiO2Concentration is 1.3wt%,
Equally by 860g dehydrated alcohol, 36gH2O, the concentrated hydrochloric acid that 0.2g mass concentration is 37% in beaker, stir by 30 DEG C of water-baths
After mixing uniformly, 104g ethyl orthosilicate is added dropwise, reflux obtains adhesive except the pH value of ammonia to system is 7 after reacting 6h
SiO2Colloidal sol,
By above-mentioned adhesive SiO2Colloidal sol and the above-mentioned SiO containing template2The colloidal sol of particle presses SiO2It is mixed for the molar ratio of 1:9
It closes uniformly, obtains plating film sol C；
At room temperature, 0.18g polyacrylic acid (PAA, Mw=5000) is dissolved in the ammonium hydroxide that 6mL mass concentration is 28%,
It is slowly added to 120mL dehydrated alcohol along walls of beaker in the case where being vigorously stirred, after being mixed evenly, every 10min to above-mentioned
0.1ml ethyl orthosilicate is added dropwise in mixed liquor, is added dropwise 5 times altogether, continues to be vigorously stirred after 10h reflux at room temperature except ammonia is to molten
The pH value of glue be 7, obtain partial size be 50nm, the colloidal sol using PAA as template, wall thickness for the silicon dioxide granule of 8.5nm, adjustment
SiO2Concentration is 1.0wt%,
Equally by 860g dehydrated alcohol, 36gH2O, the concentrated hydrochloric acid that 0.2g mass concentration is 37% in beaker, stir by 30 DEG C of water-baths
After mixing uniformly, 104g ethyl orthosilicate is added dropwise, reflux obtains adhesive except the pH value of ammonia to system is 7 after reacting 6h
SiO2Colloidal sol,
By above-mentioned adhesive SiO2Colloidal sol and the above-mentioned SiO containing template2The colloidal sol of particle presses SiO2It is mixed for the molar ratio of 1:9
It closes uniformly, obtains plating film sol D；
At room temperature, 0.20g polyacrylic acid (PAA, Mw=5000) is dissolved in the ammonium hydroxide that 6mL mass concentration is 28%,
It is slowly added to 120mL dehydrated alcohol along walls of beaker in the case where being vigorously stirred, after being mixed evenly, every 10min to above-mentioned
0.06ml ethyl orthosilicate is added dropwise in mixed liquor, is added dropwise 5 times altogether, continues reflux after being vigorously stirred 10h at room temperature and removes ammonia extremely
The pH value of colloidal sol be 7, obtain partial size be 50nm, the colloidal sol using PAA as template, wall thickness for the silicon dioxide granule of 6nm, adjustment
SiO2Concentration is 0.6wt%,
Equally by 860g dehydrated alcohol, 36gH2O, the concentrated hydrochloric acid that 0.2g mass concentration is 37% in beaker, stir by 30 DEG C of water-baths
After mixing uniformly, 104g ethyl orthosilicate is added dropwise, reflux obtains adhesive except the pH value of ammonia to system is 7 after reacting 6h
SiO2Colloidal sol,
By above-mentioned adhesive SiO2Colloidal sol and the above-mentioned SiO containing template2The colloidal sol of particle presses SiO2It is mixed for the molar ratio of 1:9
It closes uniformly, obtains plating film sol E；
(3) glass substrate that specification is 20mm*100mm*3mm, light transmittance is 91% is sequentially placed into order to 10%
It is handled respectively with the ultrasonic echography of 40W in (Solute mass fraction) hydrochloric acid lotion and 10% (Solute mass fraction) ammonium hydroxide washing lotion
70 minutes, then dehydrated alcohol and deionized water supersound washing are successively used, it dries,
Glass substrate Jing Guo above-mentioned processing is immersed in the A plating film sol of bottom film obtained in step (1)
8min, on pulling machine with 160mm/min pull rate plated film, film thickness 50nm, in 100 DEG C of solidification 2h,
After being cooled to room temperature, which is immersed in 8min in plated film sol B obtained in step (2), in
With 160mm/min pull rate plated film on pulling machine, film thickness 50nm, in 100 DEG C of solidification 2h,
After being cooled to room temperature, which is immersed in 8min in plating film sol C obtained in step (2), in
With 160mm/min pull rate plated film on pulling machine, film thickness 50nm, in 100 DEG C of solidification 2h,
After being cooled to room temperature, which is immersed in 8min in plating film sol D obtained in step (2), in
With 160mm/min pull rate plated film on pulling machine, film thickness 50nm, in 100 DEG C of solidification 2h,
After being cooled to room temperature, which is immersed in 8min in plating film sol E obtained in step (2), in
With 160mm/min pull rate plated film on pulling machine, film thickness 50nm, in 100 DEG C of solidification 2h,
After being cooled to room temperature, in 550 DEG C of Muffle furnace (2 DEG C/min of heating rate) roasting 2h, i.e., this is coated with the substrate of film
The broadband AR of omnibearing gradient refractive index can be obtained.
Prepared graded index antireflective film has comprehensive broadband anti-reflection, schematic diagram and light transmission in the present embodiment
Rate curve graph is respectively as shown in attached drawing 1,2.
Claims (5)
1. a kind of preparation method of comprehensive broadband AR, it is characterised in that: the preparation method is,
Using sol-gel method, using tetraethyl orthosilicate as silicon source, dehydrated alcohol be solvent, ammonium hydroxide is catalyst, is prepared
Solid SiO2Colloidal sol；Using tetraethyl orthosilicate as raw material, polyacrylic acid be template, dehydrated alcohol is solvent, ammonium hydroxide is
Catalyst, be prepared particle size it is uniform, using polyacrylic acid as template and the various SiO of wall thickness not etc.2Colloidal sol；With nothing
Water-ethanol, H2O, adhesive SiO is prepared in the concentrated hydrochloric acid that mass concentration is 37%, ethyl orthosilicate2Colloidal sol；By above-mentioned gained
After colloidal sol classification mixing, by dipping-pulling method plated film and hot setting layer by layer, removed template method is finally roasted；
It is specific the preparation method comprises the following steps:
(1) by the adhesive SiO2Colloidal sol and the solid SiO2Colloidal sol is uniformly mixed, and obtains the plating of bottom film
Film sol；
(2) particle size is uniform, using polyacrylic acid as template and the various SiO of wall thickness not etc.2Colloidal sol respectively with
The adhesive SiO2Colloidal sol is uniformly mixed, and obtains the plating film sol of various topmost thin films；
(3) the plating film sol of bottom film obtained in one layer of step (1) is first coated with using czochralski method in substrate surface, drying is solid
Then at thereon according to SiO after change2The sequence that particle wall thickness is gradually reduced successively is coated with obtained in step (2) using czochralski method
The plating film sol of topmost thin film and one by one baking and curing obtain comprehensive broadband and subtract finally by high-temperature roasting removed template method
Anti- film.
2. the preparation method of comprehensive broadband AR as described in claim 1, it is characterised in that: described in step (3)
Substrate is high borosilicate glass.
3. the preparation method of comprehensive broadband AR as described in claim 1, it is characterised in that: in step (3), be coated with step
Suddenly when the plating film sol of bottom film obtained in (1), rate of pulling 160mm/min；Drying operation is to solidify at 100 DEG C
2h。
4. the preparation method of comprehensive broadband AR as described in claim 1, it is characterised in that: in step (3), successively plate
When the plating film sol of topmost thin film obtained in step (2) processed, the rate of pulling is 160mm/min；Every layer of drying operation be
Solidify 2h at 100 DEG C.
5. the preparation method of comprehensive broadband AR as described in claim 1, it is characterised in that: in step (3), roasting behaviour
As calcining 2h in 550 DEG C of Muffle furnaces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611099663.9A CN106630675B (en) | 2016-12-02 | 2016-12-02 | A kind of preparation method of comprehensive broadband AR |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611099663.9A CN106630675B (en) | 2016-12-02 | 2016-12-02 | A kind of preparation method of comprehensive broadband AR |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106630675A CN106630675A (en) | 2017-05-10 |
| CN106630675B true CN106630675B (en) | 2019-06-04 |
Family
ID=58818300
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611099663.9A Active CN106630675B (en) | 2016-12-02 | 2016-12-02 | A kind of preparation method of comprehensive broadband AR |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106630675B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107298733B (en) * | 2017-07-20 | 2020-05-12 | 东莞南玻太阳能玻璃有限公司 | Template agent for anti-reflection coating liquid and preparation method and application thereof |
| CN110002768B (en) * | 2019-02-01 | 2022-01-11 | 华东师范大学 | Closely-arranged composite silicon dioxide nanosphere array structure, moth-eye-imitated antireflection structure and preparation method |
| CN110272214B (en) * | 2019-07-02 | 2021-01-05 | 福莱特玻璃集团股份有限公司 | Antireflection coated glass for packaging solar module and manufacturing method thereof |
| CN117510092A (en) * | 2023-11-29 | 2024-02-06 | 中建材玻璃新材料研究院集团有限公司 | Preparation method of multilayer protective film on surface of glass bottle |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101935168A (en) * | 2010-08-25 | 2011-01-05 | 常州大学 | Preparation method of self-cleaning antireflection film with photocatalytic function on surface |
| CN102153292A (en) * | 2010-12-27 | 2011-08-17 | 上海师范大学 | High-transmission nano silicon dioxide anti-reflection film and preparation method and application thereof |
| JP2013124208A (en) * | 2011-12-15 | 2013-06-24 | Central Glass Co Ltd | Anti-fog article |
-
2016
- 2016-12-02 CN CN201611099663.9A patent/CN106630675B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101935168A (en) * | 2010-08-25 | 2011-01-05 | 常州大学 | Preparation method of self-cleaning antireflection film with photocatalytic function on surface |
| CN102153292A (en) * | 2010-12-27 | 2011-08-17 | 上海师范大学 | High-transmission nano silicon dioxide anti-reflection film and preparation method and application thereof |
| JP2013124208A (en) * | 2011-12-15 | 2013-06-24 | Central Glass Co Ltd | Anti-fog article |
Non-Patent Citations (3)
| Title |
|---|
| Design and optimization of antireflecting coatings from nanostructured porous silicon dielectric multilayers;D. Ariza-Flores等;《Solar Energy Materials & Solar Cells》;20140201;第144-149页 |
| 溶胶凝胶法制备多孔SiO2减反射膜结构和性能研究;黄玉萍等;《稀有金属材料与工程》;20160615;第12-15页 |
| 高强度有序介孔二氧化硅减反膜的制备及性能;邹丽萍等;《稀有金属材料与工程》;20160615;第472-476页 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106630675A (en) | 2017-05-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106630675B (en) | A kind of preparation method of comprehensive broadband AR | |
| CN104681657B (en) | The manufacture method of solar cell and obtained solar cell | |
| CN101935168B (en) | Preparation method of self-cleaning antireflection film with photocatalytic function on surface | |
| CN104944794B (en) | One kind prepares graphene SiO2The method of anti-reflection film | |
| CN108623185A (en) | A kind of two-layer compound SiO2The preparation method of antireflective coating | |
| CN101948250A (en) | Method for coating antireflection film on inner wall and outer wall of outer tube of all-glass vacuum solar energy heat-collecting tube | |
| CN106348616B (en) | A kind of preparation method of SiO2/TiO2 antireflective coating | |
| CN103524049A (en) | Preparation method of monolayer SiO2 antireflection film | |
| CN105461234B (en) | Hydrophobic automatically cleaning antireflection coatings and preparation method thereof | |
| CN101308878A (en) | Uniform large-area light ray anti-reflection coating solar battery packaging glass and manufacturing method | |
| CN104362204A (en) | Solar cell gain film, manufacturing method thereof and solar cell with the same | |
| CN103691647B (en) | A kind of preparation method with the solar energy Selective absorber film of spinel structure | |
| CN105948533B (en) | A kind of preparation method of high-intensity broadband antireflective film | |
| CN102330081B (en) | Method for preparing Sm2O3 film by solvent heat method | |
| CN104701416A (en) | Method for preparing black silicon by use of silicon dioxide photoresist mask | |
| CN106045330A (en) | Preparation method of mesoporous SiO2 film and products and application of mesoporous SiO2 film | |
| CN110128026A (en) | A kind of earth silicon/titanic oxide double layer antireflection film and preparation method thereof | |
| CN107140844A (en) | A kind of preparation method of the non-conductive coated glass of the adjustable automatically cleaning of T/R values | |
| CN102795788A (en) | Preparation method of SiO2 film and its application | |
| CN107572838B (en) | Preparation method of glass with double-layer antireflection coating | |
| CN103524048A (en) | Preparation method of multi-layer SiO2 inorganic anti-reflection film | |
| CN105088199A (en) | Method for preparing VO2 nanometer film with surface orderly microstructure | |
| CN101582469A (en) | Method for attaching matte transparent conductive film on substrate | |
| CN104496200A (en) | Method for coating antireflection film to outer tube of high-temperature solar heat collecting tube | |
| CN114644461A (en) | Preparation technology of multifunctional ATO hydrophobic coating based on sol-gel method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |