CN106599465A - 1*N demultiplexer/multiplexer optimization method - Google Patents
1*N demultiplexer/multiplexer optimization method Download PDFInfo
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- G06F30/20—Design optimisation, verification or simulation
Abstract
The invention discloses a 1*N demultiplexer/multiplexer optimization method. The 1*N demultiplexer/multiplexer optimization method comprises the following steps: step 1, determining a performance requirement, a dimensional requirement and a process condition of a 1*N demultiplexer/multiplexer; step 2, carrying out mode analysis by employing a finite element method, determining widths of input and output waveguides, and an initial width of a rectangular coupling area, and selecting a shape and a dimension of an available etching element from a geometric library; step 3, determining optimization dimension parameters and optimization times of the rectangular coupling area, respectively carrying out optimization on the rectangular coupling area under the optimization dimension parameters, then calculating a value of a spectrum objective function, and taking the optimization dimension parameter with the least spectrum objective function value as the dimension parameter of the rectangular coupling area; and step 4, according to the shape and the dimension of the available etching element, dividing the rectangular coupling area into a plurality of square grids, determining a processing scheme of each square grid on the rectangular coupling area according to a manner of being from left to right and from middle to two sides, and at last determining a geometric structure of the rectangular coupling area.
Description
Technical field
The invention belongs to photonic device design field, is related to one kind 1 × N wave splitting/composing device optimization methods.
Background technology
Traditional photonic device includes directional coupler, multi-mode interference coupler, distributed Bragg reflector, micro-ring resonant
Device and grating coupler etc..At present these photonic devices overwhelming majority are according to the professional knowledge and intuition manual designs of designer,
The parameter space that can be adjusted is less, and cannot carry out large-scale the Automation Design.
The existing optimized algorithm for photonic device design has genetic algorithm, particle cluster algorithm and level set algorithm, this
A bit optimized algorithm is main act as existing structure is finely adjusted, and designer cannot be replaced to carry out structure design.
To expand the parameter space of design, a kind of method of reverse engineer is suggested, and the presenter of this method declares can
To be applied to nearly all linear photon device, and structure design be extend to into population parameter space.Based on this side
Method has been realized in wavelength division multiplexer and polarization beam apparatus on the coupler and piece of space waveguide.However, reverse engineer side
The structure that method is generated is extremely complex, has many airports in irregular shape in silicon base, for the required precision of production technology
It is very high.
The content of the invention
Technical problem：The present invention provide one kind 1 × N wave splitting/composing device optimization methods, can according to user for divide
The performance requirement of ripple/wave multiplexer, designs the geometry of wave splitting/composing device, adjusts structural parameters so as to optimize wave splitting/composing device
Performance, finally gives the dimensional parameters and geometry of wave splitting/composing device.
Technical scheme：1 × N wave splitting/composing device optimization methods of the present invention, comprise the following steps：
Step 1 determines performance requirement, dimensional requirement and the process conditions of 1 × N wave splitting/composing devices, and the performance requirement is
In N number of operation wavelength λ1～λNUnder, when the power for being input to input port is unit power, output to output port p (p=1,2,
3 ..., N) target power be N number of, as ap1, ap2, ap3..., apN, value between [0,1], and(q=1,
2,3 ..., N)；The dimensional requirement for rectangle coupling regime full-size, including maximum length L of rectangle coupling regimemax
With Breadth Maximum Wmax；The process conditions include two parts, and Part I is the refractive index of waveguide each several part, including substrate folding
Penetrate rate ns, core refractive rate noWith cladding index nc, the core refractive rate more than refractive index of substrate and cladding index, i.e.,
no＞ nsAnd no＞ nc, Part II is the characteristic size of etching technics, including minimum etching precision dminWith minimum etching diameter
Dmin,
Step 2 carries out pattern analysis according to the refractive index of waveguide each several part in the process conditions with FInite Element, it is determined that
Original width W of input waveguide, the width W of output waveguide and rectangle coupling regime in 1 × N wave splitting/composing devices0, according to technique
The characteristic size of etching technics in condition, selects the shape and size of available etching primitive from geometric library,
Step 3 determines first the optimized dimensions parameter of rectangle coupling regime and optimization number of times, the optimized dimensions parameter bag
Include the length and width of rectangle coupling regime；
Then according to following methods are optimized respectively to the rectangle coupling regime under each optimized dimensions parameter：Call three-dimensional
Full vector beamfoil spectrum or Finite-Difference Time-Domain Method divide 1 × N being made up of input waveguide, rectangle coupling regime, output waveguide
Ripple/wave multiplexer structure is transmitted analysis, obtains the actual power exported to output port 1 and output port 2, then calculates ripple
The value of spectrum object function, using the minimum optimized dimensions parameter of wave spectrum target function value as rectangle coupling regime dimensional parameters；
The shape and size of the available etching primitive that step 4 determines according to step 2, the rectangle coupled zone that step 3 is optimized
Domain is divided into several square nets, according to from right to left, from centre to the mode on both sides on the rectangle coupling regime
To each square net, its processing scheme is determined according in the following manner, the final geometry for determining rectangle coupling regime：
A) material in square net is not distributed and is processed, directly invoke three-dimensional full vector beamfoil spectrum or time domain
Finite difference calculus is transmitted to the 1 × N wave splitting/composing device structures being made up of input waveguide, rectangle coupling regime, output waveguide
Analysis, obtains the actual power exported to output port 1 and output port 2, calculates the value of wave spectrum object function；
B) for the material in the square net is distributed, the shape of the available etching primitive determined based on the step 2
And size, after removing base material, three-dimensional full vector beamfoil spectrum or Finite-Difference Time-Domain Method are called to by input waveguide, rectangle
1 × N wave splitting/composing device structures that coupling regime, output waveguide are constituted are transmitted analysis, obtain output to the He of output port 1
The actual power of output port 2, calculates the value of wave spectrum object function；
C) the wave spectrum target function value that relatively more described step a) and step b) is obtained, by the less material of wave spectrum target function value
Processing scheme of the material distribution as material distribution in the square net.
Further, in the inventive method, the wave spectrum object function in the step 3 and step 4 is：
Wherein F be wave spectrum object function, bp1, bp2, bp3..., bpNFor reality of the output to output port p under N number of operation wavelength
Border power.
Further, in the inventive method, in the step 2, input waveguide in 1 × N wave splitting/composing devices, output are determined
The width W of waveguide and original width W of rectangle coupling regime0Method be：Rectangle is built according to the refractive index of waveguide each several part
Waveguide, calls the pattern count that can be transmitted in finite element method analysis rectangular waveguide, obtains rectangular waveguide width during single mode transport
WsingleWith minimum rectangle duct width W during multimode transmissionsmultiple, input waveguide, the width W=W of output waveguidesingle, it is defeated
Enter length L=L of waveguide, output waveguidemax/ 10, original width W of rectangle coupling regime0=Wmultiple。
Further, in the inventive method, in the geometric library of the step 2, square can be included with etching cell shapes
And circle, wherein the length of side of square etching primitive is equal to minimum etching precision dmin, the diameter of circle etching primitive is equal to minimum
Etching diameter Dmin, the mode of the shape of the available etching primitive of selection is from geometric library：The square length of side of comparison, circular radius
With the maximum sized magnitude relationship of coupling regime, if dmin＜ LmaxAnd dmin＜ Wmax, then square holding is available, otherwise square
Shape is converted into unavailable；If Dmin＜ LmaxAnd Dmin＜ Wmax, then circular to keep available, otherwise circle is converted into unavailable.
Further, in the inventive method, square and circle are shaped as when the available etching primitive determined in step 2
Can when, then first using the length of side of the available etching primitive of square as the length of side of square net in the step 4, by rectangle
Coupling regime is divided into several square nets, determines the geometry of rectangle coupling regime, then in this rectangle coupled zone
On the basis of the geometry of domain, using the diameter of circular available etching primitive as the length of side of square net, by this rectangle coupling
Region geometry structure is reclassified as several square nets, and the geometry of rectangle coupling regime, and conduct are determined again
Final processing scheme.
Further, in the inventive method, in the step 3, the side of the optimized dimensions parameter of rectangle coupling regime is determined
Method is：Change the width W of rectangle coupling regimeiWith length Li, original width is W0, Breadth Maximum is Wmax, i.e. Wi∈[W0,
Wmax], for each W in the intervaliValue, keep the width of rectangle coupling regime constant, change rectangle coupling regime
Length Li, initial length is Wi, maximum length is Lmax, i.e. Li∈[Wi, Lmax]；Determine the optimization number of times of rectangle coupling regime
Method is：Width WiChange step be (Wmax-W0)/20, length LiChange step be (Lmax-Wi)/100。
Present invention can apply to the structure design and parameter optimization of 1 × N wave splitting/composing devices, are particularly suited for plane light wave
The structural adjustment of light path type 1 × N wave splitting/composing devices and performance optimize.
Beneficial effect：The present invention compared with prior art, with advantages below：
(1) wave spectrum object function is capable of the actual performance of accurate evaluation 1 × N wave splitting/composing devices and the difference of target capabilities.
The present invention according to user input performance requirement generate wave spectrum object function, rectangle coupling regime is carried out it is dimensionally-optimised and
During structure optimization, in real time the size of reflection rectangle coupling regime and structural change are for the performance shadow of wave splitting/composing device
Ring, i.e. the value of wave spectrum object function is less, the performance requirement that the actual performance of wave splitting/composing device is provided closer to user, general
The minimum optimized dimensions parameter of wave spectrum target function value as rectangle coupling regime dimensional parameters, by wave spectrum target function value most
Little material is distributed the processing scheme as material distribution in square net, so as to ensure that optimization process is needed always to user
The direction wanted is carried out.
(2) optimization process of rectangle coupling regime dimensional parameters is increased.Existing Optimization Design directly specifies rectangle
Coupling regime dimensional parameters, then for rectangle coupling regime carries out structure optimization, the selection of rectangle coupling regime dimensional parameters
The improper device performance that can affect to finally give.Invention increases the optimization process of rectangle coupling regime dimensional parameters, adjustment
The width and length of rectangle coupling regime, calculates the value of wave spectrum object function, less than coupling regime full-size parameter
Under the conditions of, using the minimum optimized dimensions parameter of wave spectrum target function value as rectangle coupling regime dimensional parameters, here basis
On proceed structure optimization, it is to avoid rectangle coupling regime dimensional parameters select it is improper caused by optimum results it is poor, carry
The device performance of 1 × N wave splitting/composing devices is risen.
(3) geometry of rectangle coupling regime is readily produced processing.The rectangle coupling that existing Reverse Design is generated
Close regional structure extremely complex, needs etch many irregular airports in waveguide, and the size of each airport differs,
It is and some of which airport size is very little therefore very high for the craft precision requirement of actual production.The present invention is according to quarter
The characteristic size of etching technique determines the shape and size of available etching primitive, through the rectangle coupling regime that structure optimization determines
In, the part for needing etching is regular square or circle, reduces the craft precision requirement for actual production.And
The size that characteristic size determined by adjustment changes available etching primitive can be passed through, will so as to meet different craft precisions
Ask.
Description of the drawings
Fig. 1 is the flow chart of 1 × N wave splitting/composing device optimization methods；
Fig. 2 is the flow chart for optimizing rectangle coupling regime dimensional parameters；
Fig. 3 is the flow chart for optimizing rectangle coupling regime geometry；
Fig. 4 is the structure chart of the wavelength demultiplexer that 1 × N wave splitting/composing devices optimization method determines.
Specific embodiment
With reference to embodiment and Figure of description, the present invention is further illustrated.
Embodiment 1
One kind 1 × N wave splitting/composing device optimization methods, are applied to 1 × 21310nm/1550nm wave splitting/composing devices
Optimization, comprises the following steps：
Step 1 determines performance requirement, dimensional requirement and the process conditions of 1 × 21310nm/1550nm wavelength demultiplexers,
The performance requirement be input under 1310nm and 1550nm wavelength input port power be unit power when, output is arrived
The target power a of output port 111And a12Respectively 1 and 0, the target power a of output to output port 221And a22Respectively 0 He
1；The dimensional requirement is the full-size of rectangle coupling regime, wherein maximum length L of rectangle coupling regimemaxFor 5000 μm,
Breadth Maximum WmaxFor 50 μm；The process conditions include two parts, and Part I is the refractive index of waveguide each several part, wherein serving as a contrast
Bottom refractive index nsFor 1.4444, core refractive rate noFor 1.4666, cladding index ncFor 1.4444, Part II is etching work
The characteristic size of skill, wherein minimum etching precision dminFor 1 μm, minimum etching diameter DminFor 2000 μm,
Step 2 carries out pattern analysis according to the refractive index of waveguide each several part in the process conditions with FInite Element, it is determined that
Input waveguide, the width W of output waveguide are 3.5 μm in 1 × 21310nm/1550nm wavelength demultiplexers, rectangle coupling regime
Original width W0For 6 μm, according to the characteristic size of etching technics in process conditions, available etching primitive is selected from geometric library
Shape and size,
Step 3 determines first the optimized dimensions parameter of rectangle coupling regime and optimization number of times, the optimized dimensions parameter bag
Include the length and width of rectangle coupling regime；
Then according to following three-dimensional full vector beamfoil spectrum enters respectively to the rectangle coupling regime under each optimized dimensions parameter
Row optimization：Call three-dimensional full vector beamfoil spectrum to be made up of input waveguide, rectangle coupling regime, output waveguide 1 ×
21310nm/1550nm wavelength demultiplexer structures are transmitted analysis, obtain the reality exported to output port 1 and output port 2
Border power, then calculates the value of wave spectrum object function, using the minimum optimized dimensions parameter of wave spectrum target function value as rectangle coupling
The dimensional parameters in region are closed, as shown in Figure 2；
The shape and size of the available etching primitive that step 4 determines according to step 2, as shown in figure 3, step 3 is optimized
Rectangle coupling regime is divided into several square nets, on the rectangle coupling regime according to from right to left, from centre to
The mode on both sides determines its processing scheme to each square net according in the following manner, final determination rectangle coupling regime
Geometry：
A) material in square net is not distributed and is processed, directly invoke three-dimensional full vector beamfoil spectrum to by defeated
Enter waveguide, rectangle coupling regime, output waveguide constitute 1 × 2 1310nm/1550nm wavelength demultiplexer structures be transmitted
Analysis, obtains the actual power exported to output port 1 and output port 2, calculates the value of wave spectrum object function；
B) for the material in the square net is distributed, the shape of the available etching primitive determined based on the step 2
And size, after removing base material, three-dimensional full vector beamfoil spectrum is called to by input waveguide, rectangle coupling regime, output wave
1 × 2 1310nm/1550nm wavelength demultiplexer structures for leading composition are transmitted analysis, obtain output to the He of output port 1
The actual power of output port 2, calculates the value of wave spectrum object function；
C) the wave spectrum target function value that relatively more described step a) and step b) is obtained, by the less material of wave spectrum target function value
Processing scheme of the material distribution as material distribution in the square net.
Wave spectrum object function in the step 3 and step 4 is：
Wherein F be wave spectrum object function, b11And b12For reality of the output to output port 1 under 1310nm and 1550nm wavelength
Border power, b21And b22For actual power of the output to output port 2 under 1310nm and 1550nm operation wavelengths.
In the geometric library of step 2, square and circle can be included with etching cell shapes, wherein square etching primitive
The length of side is equal to minimum etching precision dmin, the diameter of circle etching primitive is equal to minimum etching diameter Dmin, select from geometric library
Can be with the mode of the shape of etching primitive：The maximum sized size of the square length of side of comparison, circular radius and coupling regime
Relation, due to dmin＜ LmaxAnd dmin＜ Wmax, therefore square keeps available；Due to Dmin＞ Wmax, therefore circle is converted into not
Can use.
The geometry of final 1 × 2 1310nm/1550nm wavelength demultiplexers for determining is as shown in figure 4, inverse with existing
The structure of the wavelength demultiplexer determined to method for designing is compared, the geometry rule of wavelength (de) multiplexing, it is easy to produce and process.
In another kind of embodiment of the present invention, using Finite-Difference Time-Domain Method each optimized dimensions are joined respectively in step 3
Rectangle coupling regime under several is optimized, step 4 a) and b) in Finite-Difference Time-Domain Method to by input waveguide, square
1 × 2 1310nm/1550nm wavelength demultiplexer structures that shape coupling regime, output waveguide are constituted are transmitted analysis.
Above-described embodiment is only the preferred embodiment of the present invention, it should be pointed out that：For the ordinary skill of the art
For personnel, under the premise without departing from the principles of the invention, some improvement and equivalent can also be made, these are to the present invention
Claim is improved and the technical scheme after equivalent, each falls within protection scope of the present invention.
Claims (6)
1. 1 × N of one kind wave splitting/composings device optimization method, it is characterised in that comprise the following steps：
Step 1 determines performance requirement, dimensional requirement and the process conditions of 1 × N wave splitting/composing devices, and the performance requirement is N number of
Operation wavelength λ1～λNUnder, when the power for being input to input port is unit power, output to output port p (p=1,2,3 ...,
N target power) is N number of, as ap1, ap2, ap3..., apN, value between [0,1], and(q=1,2,
3 ..., N)；The dimensional requirement for rectangle coupling regime full-size, including maximum length L of rectangle coupling regimemaxWith
Breadth Maximum Wmax；The process conditions include two parts, and Part I is the refractive index of waveguide each several part, including substrate refraction
Rate ns, core refractive rate noWith cladding index nc, the core refractive rate is more than refractive index of substrate and cladding index, i.e. no
＞ nsAnd no＞ nc, Part II is the characteristic size of etching technics, including minimum etching precision dminWith minimum etching diameter
Dmin,
Step 2 carries out pattern analysis according to the refractive index of waveguide each several part in the process conditions with FInite Element, determines 1 × N
Original width W of input waveguide, the width W of output waveguide and rectangle coupling regime in wave splitting/composing device0, according to process conditions
The characteristic size of middle etching technics, selects the shape and size of available etching primitive from geometric library,
Step 3 determines first the optimized dimensions parameter of rectangle coupling regime and optimization number of times, and the optimized dimensions parameter includes square
The length and width of shape coupling regime；
Then according to following methods are optimized respectively to the rectangle coupling regime under each optimized dimensions parameter：Call three-dimensional full arrow
Amount beamfoil spectrum or Finite-Difference Time-Domain Method are to 1 × N splitting/composings for being made up of input waveguide, rectangle coupling regime, output waveguide
Ripple device structure is transmitted analysis, obtains the actual power exported to output port 1 and output port 2, then calculates wave spectrum mesh
The value of scalar functions, using the minimum optimized dimensions parameter of wave spectrum target function value as rectangle coupling regime dimensional parameters；
The shape and size of the available etching primitive that step 4 determines according to step 2, the rectangle coupling regime that step 3 is optimized is drawn
It is divided into several square nets, according to from right to left, from centre to the mode on both sides to every on the rectangle coupling regime
Individual square net, according in the following manner its processing scheme is determined, the final geometry for determining rectangle coupling regime：
A) material in square net is not distributed and is processed, directly invoke three-dimensional full vector beamfoil spectrum or time-domain finite
Calculus of finite differences is transmitted point to the 1 × N wave splitting/composing device structures being made up of input waveguide, rectangle coupling regime, output waveguide
Analysis, obtains the actual power exported to output port 1 and output port 2, calculates the value of wave spectrum object function；
B) for the material in the square net is distributed, the shape and chi of the available etching primitive determined based on the step 2
It is very little, after removing base material, three-dimensional full vector beamfoil spectrum or Finite-Difference Time-Domain Method are called to being coupled by input waveguide, rectangle
1 × N wave splitting/composing device structures that region, output waveguide are constituted are transmitted analysis, obtain output to output port 1 and output
The actual power of port 2, calculates the value of wave spectrum object function；
C) the wave spectrum target function value that relatively more described step a) and step b) is obtained, by the less material point of wave spectrum target function value
Processing scheme of the cloth as material distribution in the square net.
2. 1 × N wave splitting/composings device optimization method according to claim 1, it is characterised in that the step 3 and step 4
In wave spectrum object function be：
Wherein F be wave spectrum object function, bp1, bp2, bp3..., bpNFor actual work(of the output to output port p under N number of operation wavelength
Rate.
3. 1 × N wave splitting/composings device optimization method according to claim 1, it is characterised in that in the step 2, according to
In the following manner determines the original width of input waveguide, the width W of output waveguide and rectangle coupling regime in 1 × N wave splitting/composing devices
W0：Rectangular waveguide is built according to the refractive index of waveguide each several part, the mould that can be transmitted in finite element method analysis rectangular waveguide is called
Formula number, obtains rectangular waveguide width W during single mode transportsingleWith minimum rectangle duct width W during multimode transmissionsmultiple, it is defeated
Enter the width W=W of waveguide, output waveguidesingle, input waveguide, length L=L of output waveguidemax/ 10, rectangle coupling regime
Original width W0=Wmultiple。
4. 1 × N wave splitting/composing device optimization methods according to claim 1,2 or 3, it is characterised in that the step 2
In geometric library, square and circle can be included with etching cell shapes, wherein the length of side of square etching primitive is equal to minimum quarter
Erosion precision dmin, the diameter of circle etching primitive is equal to minimum etching diameter Dmin, available etching primitive is selected from geometric library
The mode of shape is：The maximum sized magnitude relationship of the square length of side of comparison, circular radius and coupling regime, if dmin＜ Lmax
And dmin＜ Wmax, then square holding is available, and otherwise square is converted into unavailable；If Dmin＜ LmaxAnd Dmin＜ Wmax, then justify
Shape keeps available, and otherwise circle is converted into unavailable.
5. 1 × N wave splitting/composings device optimization method according to claim 4, it is characterised in that when determining in the step 2
Available etching primitive be shaped as square and it is circular can when, then first with the available etching base of square in the step 4
Rectangle coupling regime is divided into several square nets by the length of side of unit as the length of side of square net, determines rectangle coupling
The geometry in region is closed, then on the basis of this rectangle coupling regime geometry, with the straight of circular available etching primitive
This rectangle coupling regime geometry is reclassified as several square nets by footpath as the length of side of square net, then
The secondary geometry for determining rectangle coupling regime, and as final processing scheme.
6. 1 × N wave splitting/composing device optimization methods according to claim 1,2 or 3, it is characterised in that in the step 3,
The optimized dimensions parameter of rectangle coupling regime determines in accordance with the following methods：Change the width W of rectangle coupling regimeiWith length Li, just
Beginning width is W0, Breadth Maximum is Wmax, i.e. Wi∈[W0, Wmax], for each W in the intervaliValue, keep rectangle coupling
The width for closing region is constant, changes length L of rectangle coupling regimei, initial length is Wi, maximum length is Lmax, i.e. Li∈
[Wi, Lmax]；
The optimization number of times of rectangle coupling regime determines in accordance with the following methods：Width WiChange step be (Wmax-W0)/20, length
LiChange step be (Lmax-Wi)/100。
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