CN106597272B - Two level STATCOM switching device open-circuit fault localization methods - Google Patents
Two level STATCOM switching device open-circuit fault localization methods Download PDFInfo
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- CN106597272B CN106597272B CN201611182159.5A CN201611182159A CN106597272B CN 106597272 B CN106597272 B CN 106597272B CN 201611182159 A CN201611182159 A CN 201611182159A CN 106597272 B CN106597272 B CN 106597272B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/327—Testing of circuit interrupters, switches or circuit-breakers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/50—Testing of electric apparatus, lines, cables or components for short-circuits, continuity, leakage current or incorrect line connections
Abstract
A kind of two level STATCOM switching device open-circuit fault localization methods, belong to inverter switch device fault diagnosis field.Switching device open-circuit fault includes IGBT open circuit and freewheeling diode two classes of open circuit.Electric current i is exported by acquisition STATCOM three-phasel(k), (l ∈ (a, b, c)) and net side three-phase voltage ul(k), (l ∈ (a, b, c)) calculates three-phase and compensates the positive and negative half-wave reactive power of electric currentIt is normalized to obtainAs fault signature, threshold alpha with setting, β is compared to phase where positioning failure.Faulted phase current is extracted again calculates 1/4 period reactive power difference dlx(x=0,1, l ∈ (a, b, c)) further positioning IGBT open circuit or freewheeling diode are opened a way compared with given threshold γ.It solves the problems, such as that existing diagnostic method cannot distinguish between the open-circuit fault of IGBT and freewheeling diode, is effectively accurately positioned the abort situation of IGBT and diode, and do not influenced by the fluctuation of load.
Description
Technical field
The present invention relates to a kind of two level STATCOM switching device open-circuit fault localization methods, belong to fault of converter and examine
Disconnected field.
Background technique
Inverter in the industrial production using more and more extensive.The power that inverter must use high switching frequency is opened
Close device.It is more than the statistics of 200 parts of investigation from 80 companies according to one, power device failure occupies the 60% of frequency converter failure
More than, therefore fault power device is quickly positioned, it is most important for inverter.
There are many power device of inverter method for diagnosing faults at present, it is the most commonly used with current detecting, such as PARK
Vector method, current phasor method of loci etc..However these methods are only applicable in and frequency conversion speed-adjusting system, and it is (static not to be suitable for STATCOM
Synchronous compensator), the reason is that because frequency conversion speed-adjusting system its exchange flank is motor, belong to inductive load.But for
STATCOM will work under perception and two kinds of operating conditions of capacitive, therefore the reliability of these judgment methods is difficult to ensure.Power switch
Device open-circuit fault includes IGBT open circuit and freewheeling diode two classes of open circuit, due to the electric current side of upper tube IGBT and down tube diode
To consistent always, therefore the above-mentioned diagnostic method based on the magnitude of current can not also further discriminate between the open-circuit fault of IGBT and diode.
Therefore power device breakdown judge is difficult, is worth research.
Summary of the invention
Shortcoming in view of the above technology, provides that a kind of step is simple, two high-efficient level of accurate positioning
STATCOM switching device open-circuit fault localization method.
To realize the above-mentioned technical purpose, two level STATCOM switching device open-circuit fault localization methods of the invention, including
Following steps:
Step 1: the analog signals on two level STATCOM switching devices of acquisition, are acquired using current transformer
STATCOM three-phase exports electric current il(k), (l ∈ (a, b, c)) acquires exchange side power grid three-phase voltage u using mutual inductorl(k),(l
∈ (a, b, c)), wherein il(k) electric current, u are exported for the l phase of STATCOMl(k) it is and il(k) the phase net side sampled in the same time
Voltage；
Step 2: a detection cycle of every phase l (l ∈ (a, b, the c)) voltage on line side that will acquire is divided into four areas
Between: Interval I, section II, section III, section IV, the three-phase voltage on line side in four sections match with three-phase output electric current respectively,
Obtain reactive power Q corresponding with four sections of three-phase voltage on line sidelI、QlII、QlIII、QlIV, utilize three-phase voltage on line side
The corresponding reactive power Q in four sectionslI、QlII、QlIII、QlIVObtain the three-phase positive half-wave of STATCOM major loop switch
Reactive power Ql +With the reactive power Q of the negative half-wave of three-phasel -；
Step 3: according to the reactive power Q of the positive and negative half-wave of three-phase of STATCOM major loop switchl +,Ql -It is special to extract failure
Value indicative Sl m, obtained 6 fault eigenvalue Sl mAll respectively correspond the working condition of an IGBT or diode；
Step 4: according to 6 obtained characteristic value Sl mGuilty culprit phase is judged, as 6 characteristic value Sl mAny feature value goes out
When in present preset threshold interval, then by appearing in the characteristic value S in threshold intervall mJudge the corresponding phase of current characteristic value
Failure, otherwise return step one；
Step 5: utilizing the reactive power Q in four sections of a detection cyclelI、QlII、QlIII、QlIVCalculate failure phase l electricity
Flow 1/4 period reactive power difference dlx(x=0,1；L ∈ (a, b, c)), it is poor using 1/4 period of the electric current reactive power of failure phase l
dlx(x=0,1；L ∈ (a, b, c)) further judgement be specifically failure phase on IGBT open circuit or freewheeling diode open circuit therefore
Barrier.
Four sections that one detection cycle of every phase l (l ∈ (a, b, c)) voltage on line side is divided into, respectively net side
The section I of 90~180 degree of voltage-phase, 180~270 degree of section II, 270~360 degree of section III, 0~90 degree of section
IV。
The reactive power Q of the three-phase positive half-wavel +With the reactive power Q of the negative half-wave of three-phasel -Pass through formula:It obtains, and calculates the reactive power of the every mutually positive and negative half-wave of STATCOM using following formula:
In formula: k is acquisition exchange side power grid three-phase voltage ul(k), k-th of sampled point of (l ∈ (a, b, c)), il(k),(l
∈ (a, b, c)) be and three-phase voltage ul(k), the three-phase electricity flow valuve that (l ∈ (a, b, c)) is sampled in the same time, each periodic sampling point
Number is N, is 4 multiple；
The fault eigenvalue Sl mUtilize formula:With
6 fault eigenvalue S are calculatedl mAll respectively correspond one
The working condition of IGBT or diode, wherein m is the characteristic quantity for distinguishing switching tube up and down, i.e. m=+, Sl +Corresponding upper tube IGBT and
Down tube diode；Similarly, m=-, Sl -Corresponding down tube IGBT and upper tube diode.
The setting fault eigenvalue Sl mThreshold alpha=0.2, β=- 0.2 for judging guilty culprit phase, when meeting β < Sl m<α
When condition, l (l ∈ (a, b, c)) phase fault is determined；
When fault-free, 6 fault eigenvalue Sl mValue perceptual operating condition lower aprons be 1, fault eigenvalue Sl?
Capacitive operating condition lower aprons are -1；When switch tube open circuit occurs, the corresponding fault eigenvalue S of the switching tubel mValue close to 0, therefore,
Mistaken diagnosis in order to guarantee that it is as small as possible that threshold value should be arranged for correctness, but when lesser threshold value will lead to load sudden change again,
The threshold value being arranged using this method, diagnostic method are not influenced by load sudden change.
If -0.2 < Sl +< 0, judge that two level STATCOM switching devices are capacitive operating condition, l phase upper tube IGBT or down tube at this time
Freewheeling diode open circuit；If -0.2 < Sl -< 0, judge that two level STATCOM switching devices are capacitive operating condition, l phase down tube at this time
IGBT or upper tube freewheeling diode open circuit；If 0 < Sl +< 0.2, judge that two level STATCOM switching devices are perceptual operating condition, l at this time
Phase upper tube IGBT or down tube freewheeling diode open circuit；If
0<Sl -< 0.2, judge that two level STATCOM switching devices are perceptual operating condition at this time, l phase down tube IGBT or upper tube are continuous
Flow diode open-circuit.
Utilize formula:Calculate failure phase l electric current 1/4 period reactive power difference dlx(x=0,1；l∈(a,
B, c)), and be reactive power difference dlxThreshold interval set perceptual capacitive threshold gamma=0, utilize following table:
Further to judge that IGBT open circuit or freewheeling diode open circuit complete diagnosis.
The utility model has the advantages that the application exports electric current and electricity by the three-phase of acquisition static synchronous compensator major loop switching device
Signal is pressed, and electric current and voltage signal acquisition reactive power are exported by three-phase, it is logical to obtain fault eigenvalue using reactive power
The threshold interval for crossing fault eigenvalue judges the failure original part of static synchronous compensator major loop switching device, and step is simple,
Detection is accurate high-efficient, is not influenced, high reliablity by load sudden change, solves existing method and be difficult to differentiate between IGBT and diode
The problem of open-circuit fault
Detailed description of the invention
Fig. 1 is two level STATCOM electric topology figure of three-phase four-wire system of the invention.
When Fig. 2 is generation a phase upper tube diode open-circuit of the invention, characteristic value Fl mWith the curve graph of rate of load condensate.
When Fig. 3 is generation a phase down tube IGBT open circuit of the invention, characteristic value Fl mWith the curve graph of rate of load condensate.
Fig. 4 is d when occurring that diode open-circuit and upper tube IGBT open a way in a phase under perceptual operating condition of the inventiona1With load
The curve graph of rate.
Fig. 5 is d when occurring that diode open-circuit and upper tube IGBT open a way in a phase under capacitive operating condition of the inventiona0With load
The curve graph of rate.
Fig. 6 is the method for the present invention flow chart.
Specific embodiment
One embodiment is described further with reference to the accompanying drawing:
As shown in figures 1 to 6, two level STATCOM switching device open-circuit fault localization methods of the invention comprising with
Lower step:
Step 1: the analog signals on two level STATCOM switching devices of acquisition, are acquired using current transformer
STATCOM three-phase exports electric current il(k), (l ∈ (a, b, c)) acquires exchange side power grid three-phase voltage u using mutual inductorl(k),(l
∈ (a, b, c)), wherein il(k) electric current, u are exported for the l phase of STATCOMl(k) it is and il(k) the phase net side sampled in the same time
Voltage；
Step 2: a detection cycle of every phase l (l ∈ (a, b, the c)) voltage on line side that will acquire is divided into four areas
Between, four sections are respectively the section I of voltage on line side 90~180 degree of phase, 180~270 degree of section II, 270~360
The section III of degree, 0~90 degree of section IV, the three-phase voltage on line side in four sections match with three-phase output electric current respectively, obtain
Obtain reactive power Q corresponding with four sections of three-phase voltage on line sidelI、QlII、QlIII、QlIV, utilize three-phase voltage on line side four
The corresponding reactive power Q in a sectionlI、QlII、QlIII、QlIVObtain the nothing of the three-phase positive half-wave of STATCOM major loop switch
Function power Ql +With the reactive power Q of the negative half-wave of three-phasel -；The reactive power Q of the three-phase positive half-wavel +With the nothing of the negative half-wave of three-phase
Function power Ql -Pass through formula:It obtains, and calculates the every mutually positive and negative half-wave of STATCOM using following formula
Reactive power:
In formula: k is acquisition exchange side power grid three-phase voltage ul(k), k-th of sampled point of (l ∈ (a, b, c)), il(k),(l
∈ (a, b, c)) be and three-phase voltage ul(k), the three-phase electricity flow valuve that (l ∈ (a, b, c)) is sampled in the same time, each periodic sampling point
Number is N, is 4 multiple；
Step 3: according to the reactive power Q of the positive and negative half-wave of three-phase of STATCOM major loop switchl +,Ql -It is special to extract failure
Value indicative Sl m, obtained 6 fault eigenvalue Sl mAll respectively correspond the working condition of an IGBT or diode；
Step 4: according to 6 obtained characteristic value Sl mGuilty culprit phase is judged, as 6 characteristic value Sl mAny feature value goes out
When in present preset threshold interval, then by appearing in the characteristic value S in threshold intervall mJudge the corresponding phase of current characteristic value
Failure, otherwise return step one；
Step 5: utilizing the reactive power Q in four sections of a detection cyclelI、QlII、QlIII、QlIVCalculate failure phase l electricity
Flow 1/4 period reactive power difference dlx(x=0,1；L ∈ (a, b, c)), it is poor using 1/4 period of the electric current reactive power of failure phase l
dlx(x=0,1；L ∈ (a, b, c)) further judgement be specifically failure phase on IGBT open circuit or freewheeling diode open circuit therefore
Barrier.
The fault eigenvalue Sl mUtilize formula:With
6 fault eigenvalue S are calculatedl mAll respectively correspond one
The working condition of IGBT or diode, wherein m is the characteristic quantity for distinguishing switching tube up and down, i.e. m=+, Sl +Corresponding upper tube IGBT and
Down tube diode；Similarly, m=-, Sl -Corresponding down tube IGBT and upper tube diode.
As shown in Figures 2 and 3, the setting fault eigenvalue Sl mJudge threshold alpha=0.2, β of guilty culprit phase=-
0.2, when meeting β < Sl mWhen < α condition, l (l ∈ (a, b, c)) phase fault is determined；
When fault-free, 6 fault eigenvalue Sl mValue perceptual operating condition lower aprons be 1, fault eigenvalue Sl?
Capacitive operating condition lower aprons are -1；When switch tube open circuit occurs, the corresponding fault eigenvalue S of the switching tubel mValue close to 0, therefore,
Mistaken diagnosis in order to guarantee that it is as small as possible that threshold value should be arranged for correctness, but when lesser threshold value will lead to load sudden change again,
The threshold value being arranged using this method, diagnostic method are not influenced by load sudden change.
If -0.2 < Sl +< 0, judge that two level STATCOM switching devices are capacitive operating condition, l phase upper tube IGBT or down tube at this time
Freewheeling diode open circuit；If -0.2 < Sl -< 0, judge that two level STATCOM switching devices are capacitive operating condition, l phase down tube at this time
IGBT or upper tube freewheeling diode open circuit；If 0 < Sl +< 0.2, judge that two level STATCOM switching devices are perceptual operating condition, l at this time
Phase upper tube IGBT or down tube freewheeling diode open circuit；If
0<Sl -< 0.2, judge that two level STATCOM switching devices are perceptual operating condition at this time, l phase down tube IGBT or upper tube are continuous
Flow diode open-circuit.
Such as Fig. 4 and Fig. 5, formula is utilized:Calculate failure phase l electric current 1/4 period reactive power difference dlx(x
=0,1；L ∈ (a, b, c)), and be reactive power difference dlxThreshold interval set perceptual capacitive threshold gamma=0, utilize following table:
Further to judge that IGBT open circuit or freewheeling diode open circuit complete diagnosis.
Claims (4)
1. a kind of two level STATCOM switching device open-circuit fault localization methods, it is characterised in that the following steps are included:
Step 1: the analog signals on two level STATCOM switching devices of acquisition, acquire STATCOM using current transformer
Three-phase exports electric current il(k), (l ∈ (a, b, c)) acquires exchange side power grid three-phase voltage u using mutual inductorl(k),(l∈(a,b,
C)), wherein il(k) electric current, u are exported for the l phase of STATCOMl(k) it is and il(k) the phase voltage on line side sampled in the same time；
Step 2: a detection cycle of every phase l (l ∈ (a, b, the c)) voltage on line side that will acquire is divided into four sections: area
Between I, section II, section III, section IV, the three-phase voltage on line side in four sections respectively with three-phase output electric current match, obtain
Reactive power Q corresponding with four sections of three-phase voltage on line sidelI、QlII、QlIII、QlIV, utilize three-phase voltage on line side four
The corresponding reactive power Q in sectionlI、QlII、QlIII、QlIVObtain the idle of the three-phase positive half-wave of STATCOM major loop switch
Power Ql +With the reactive power Q of the negative half-wave of three-phasel -；
Step 3: according to the reactive power Q of the positive and negative half-wave of three-phase of STATCOM major loop switchl +,Ql -Extract fault eigenvalue
Sl m, obtained 6 fault eigenvalue Sl mAll respectively correspond the working condition of an IGBT or diode；
Step 4: according to 6 obtained characteristic value Sl mGuilty culprit phase is judged, as 6 characteristic value Sl mAny feature value appears in
When in preset threshold interval, then by appearing in the characteristic value S in threshold intervall mJudge the corresponding phase event of current characteristic value
Hinder, otherwise return step one；
Step 5: utilizing the reactive power Q in four sections of a detection cyclelI、QlII、QlIII、QlIVCalculate failure phase l electric current 1/
4 period reactive power difference dlx(x=0,1；L ∈ (a, b, c)), utilize 1/4 period of the electric current reactive power difference d of failure phase llx(x
=0,1；L ∈ (a, b, c)) further judge to be specifically IGBT open circuit or the freewheeling diode open-circuit fault in failure phase；
The setting fault eigenvalue Sl mThreshold alpha=0.2, β=- 0.2 for judging guilty culprit phase, when meeting β < Sl m< α condition
When, determine l (l ∈ (a, b, c)) phase fault；
When fault-free, 6 fault eigenvalue Sl mValue perceptual operating condition lower aprons be 1, fault eigenvalue SlIn capacitive
Operating condition lower aprons are -1；When switch tube open circuit occurs, the corresponding fault eigenvalue S of the switching tubel mValue close to 0, therefore, in order to
It is as small as possible to guarantee that threshold value should be arranged for correctness, but mistaken diagnosis when lesser threshold value will lead to load sudden change again, use
The threshold value of this method setting, diagnostic method are not influenced by load sudden change；
If -0.2 < Sl +< 0, judge that two level STATCOM switching devices are capacitive operating condition, l phase upper tube IGBT or down tube afterflow at this time
Diode open-circuit；If -0.2 < Sl -< 0, judge that two level STATCOM switching devices are capacitive operating condition at this time, l phase down tube IGBT or
Upper tube freewheeling diode open circuit；If 0 < Sl +< 0.2, judge that two level STATCOM switching devices are perceptual operating condition, l phase upper tube at this time
IGBT or down tube freewheeling diode open circuit；If 0 < Sl -< 0.2, judge that two level STATCOM switching devices are perceptual operating condition, l at this time
Phase down tube IGBT or upper tube freewheeling diode open circuit；
Utilize formula:Calculate failure phase l electric current 1/4 period reactive power difference dlx(x=0,1；l∈(a,b,
It c)), and is reactive power difference dlxThreshold interval set perceptual capacitive threshold gamma=0, utilize following table:
Further to judge that IGBT open circuit or freewheeling diode open circuit complete diagnosis.
2. two level STATCOMs switching device open-circuit fault localization method according to claim 1, it is characterised in that:
Four sections that one detection cycle of every phase l (l ∈ (a, b, c)) voltage on line side is divided into, respectively voltage on line side phase
The section I of 90~180 degree, 180~270 degree of section II, 270~360 degree of section III, 0~90 degree of section IV.
3. two level STATCOMs switching device open-circuit fault localization method according to claim 1, it is characterised in that:
The reactive power Q of the three-phase positive half-wavel +With the reactive power Q of the negative half-wave of three-phasel -Pass through formula:It obtains,
And the reactive power of the every mutually positive and negative half-wave of STATCOM is calculated using following formula:
In formula: k is acquisition exchange side power grid three-phase voltage ul(k), k-th of sampled point of (l ∈ (a, b, c)), il(k),(l∈
(a, b, c)) be and three-phase voltage ul(k), the three-phase electricity flow valuve that (l ∈ (a, b, c)) is sampled in the same time, each periodic sampling points
It is 4 multiple for N.
4. two level STATCOMs switching device open-circuit fault localization method according to claim 1, it is characterised in that institute
State fault eigenvalue Sl mUtilize formula:With6 fault eigenvalue S are calculatedl mAll respectively correspond IGBT or two
The working condition of pole pipe, wherein m is the characteristic quantity for distinguishing switching tube up and down, i.e. m=+, Sl +Corresponding upper tube IGBT and two pole of down tube
Pipe；Similarly, m=-, Sl -Corresponding down tube IGBT and upper tube diode.
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| CN108694291B (en) * | 2018-06-05 | 2021-04-16 | 国网江苏省电力有限公司苏州供电分公司 | Simulation verification system for background machine of transformer substation |
| CN110927565B (en) * | 2019-11-06 | 2022-07-01 | 国网江苏省电力有限公司苏州供电分公司 | Open-circuit fault positioning method for SVG (static var generator) main loop switching device |
| CN112526397B (en) * | 2020-11-23 | 2022-06-03 | 中国矿业大学 | Open-circuit fault diagnosis method for neutral point clamped single-phase three-level inverter |
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Effective date of registration: 20190401 Address after: 221116 Research Institute of China University of Mining and Technology, 1 University Road, Xuzhou, Jiangsu Applicant after: China University of Mining & Technology Applicant after: Nanjing wisdom union new energy Co., Ltd. Applicant after: Suzhou power supply branch, Jiangsu Electric Power Co., Ltd. Applicant after: Nanjing East Power Technology Co., Ltd. Address before: 221116 Research Institute of China University of Mining and Technology, Tongshan University Road, Xuzhou City, Jiangsu Province Applicant before: China University of Mining & Technology Applicant before: Nanjing East Power Technology Co., Ltd. Applicant before: Nanjing wisdom union new energy Co., Ltd. |
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