CN106591913A - Zinc oxide nanopillar array material and electrochemical deposition method for controlling density and optical bandgap of zinc oxide nanopillar arrays - Google Patents
Zinc oxide nanopillar array material and electrochemical deposition method for controlling density and optical bandgap of zinc oxide nanopillar arrays Download PDFInfo
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Abstract
The invention relates to a zinc oxide nanopillar array material and an electrochemical deposition method for controlling the density and optical bandgap of zinc oxide nanopillar arrays. The zinc oxide nanopillar array material is doped with an indium component, the density of the nanopillar arrays is 2*10<9>cm<2> to 16*10<9>cm<2>, and the optical bandgap is 3.2-3.8eV. The method includes the step that a growing substrate is subjected to electrochemical deposition in a solution containing a zinc source precursor, ammonium salt and indium salt. According to the zinc oxide nanopillar array material and the electrochemical deposition method for controlling the density and optical bandgap of the zinc oxide nanopillar arrays, the ammonium salt and the indium salt are led into the electrochemical deposition reaction solution at the same time, indium doping is facilitated, indium can enter the zinc oxide nanopillar arrays, and the spacing, density and optical bandgap of the zinc oxide nanopillar arrays can be controlled within a specific range.
Description
Technical field
The invention belongs to nano structural material field, in particular it relates to a kind of zinc-oxide nano column array material
The electrochemical deposition method of material and manipulation zinc-oxide nano column array density and optical band gap.
Background technology
Zinc oxide (ZnO) is a kind of semi-conducting material with piezoelectricity and photoelectric characteristic, used as a kind of wide
Bandgap semiconductor has the direct bandwidth of Eg～3.3eV (in 300K) and the exciton bind energy of 60meV,
It is a kind of cheap, abundant raw material source, stable performance, nontoxic and environment amenable material.
For the research and development of thin-film solar cells of new generation, target is imitated should further to lift its conversion
Rate, reduces its production cost, so as to improve its cost performance simultaneously again.Lift the conversion of solar cell
Efficiency can pass through to increase its incident flux, improve its absorptivity and strengthen the photo-generated carrier of battery
Collection realizing.ZnO nano post array is implanted in traditional membrane structure solar cell, by energy
Enough performances that solar cell is lifted from two approach of optics and electricity.As collect with transport photoproduction current-carrying
The ZnO nano post of son, it is desirable to the semi-conducting material Parameter adjustable control such as its band gap width and work function, from
And ZnO nano post can be controlled and the band structure image between layer material is absorbed, it is ensured that photoproduction current-carrying
Son effective collection with transport.Therefore need development new method badly and prepare controllable high-quality of semiconducting behavior parameter
Amount ZnO nano post array.On the other hand, to realization absorption layer material between nano column array
Effectively filling, then need the spacing for increasing nano-pillar.Therefore need development new method badly and prepare semiconducting behavior ginseng
The ZnO nano post array of number and array density and spacing-controllable.
In prior art, using electrochemical process prepare zinc oxide (ZnO) nano-structure array (for example：
The Journal of Physical Chemistry C, 2011,115,5239-5243), by control growth bar
Part, manipulates growth rate, work function and the electrical properties of nano-pillar, but cannot manipulate grown nanometer
Array of structures density and optical band gap.
The content of the invention
The purpose of the present invention is prepared by the preparation method for overcoming existing zinc-oxide nano column array material
Zinc-oxide nano column array nano-structure array the defect that cannot manipulate of density and optical band gap, carry
For a kind of new zinc-oxide nano column array material and manipulation zinc-oxide nano column array density and optics
The electrochemical deposition method of band gap.
The invention provides a kind of zinc-oxide nano column array material, the zinc-oxide nano column array material is mixed
Miscellaneous to have indium component, the density of nano column array is 2 × 109cm-2To 16 × 109cm-2, optical band gap is
3.2-3.8eV。
Present invention also offers the electrochemistry of a kind of manipulation zinc-oxide nano column array density and optical band gap
Deposition process, the method includes：Growth substrate is made in the solution containing zinc source presoma, ammonium salt and indium salts
In carry out electrochemical deposition.
Present invention also offers the zinc-oxide nano column array material prepared by said method.
In the present invention, by introducing ammonium salt and indium salts simultaneously in the reaction solution of electrochemical deposition, with
Indium doping is promoted to enter in zinc-oxide nano column array so that the density and optics of zinc-oxide nano column array
Band gap can be manipulated in a specific range, and then cause the zinc-oxide nano column array material too
The fields such as positive energy battery, light emitting diode, ultraviolet laser, UV photodetector, gas sensor
In show the prospect of being widely applied.
Other features and advantages of the present invention will be described in detail in subsequent specific embodiment part.
Description of the drawings
Fig. 1 (a) is the ZnO nano post array for not adding the formula of indium salts and ammonium salt to prepare in comparative example 1
SEM (SEM) photo.Fig. 1 (b) is that matching somebody with somebody for indium salts and ammonium salt is added in embodiment 3
The SEM photograph of ZnO nano post array prepared by side.
Fig. 2 is the X-ray spectrum figure of zinc-oxide nano column array materials A 3 prepared by embodiment 3.
Fig. 3 (a) is the ZnO nano post array for not adding the formula of indium salts and ammonium salt to prepare in comparative example 1
Optical band gap spectrogram, Fig. 3 (b) is the optics of zinc-oxide nano column array materials A 3 prepared by embodiment 3
Band gap spectrogram.
Specific embodiment
The specific embodiment of the present invention is described in detail below.It should be appreciated that this place is retouched
The specific embodiment stated is merely to illustrate and explains the present invention, is not limited to the present invention.
All ranges disclosed herein all can be combined comprising end points and independently.It is presently disclosed
Scope end points and any value be not limited to the accurate scope or value, these scopes or value it should be understood that
It is the value comprising close these scopes or value.
The invention provides a kind of zinc-oxide nano column array material, the zinc-oxide nano column array material is mixed
Miscellaneous to have indium component, the density of nano column array is 2 × 109cm-2To 16 × 109cm-2, optical band gap is
3.2-3.8eV。
In the preferred case, the density of the nano column array of the zinc-oxide nano column array material is
5.8×109cm-2To 14 × 109cm-2, optical band gap is 3.6-3.7eV.
In the zinc-oxide nano column array material, the average headway of adjacent nano-pillar can be
10-20nm。
In the present invention, the density and spacing of nano column array is surveyed by the statistical estimation of scanning electron microscopic picture
It is fixed.The optical band gap of zinc-oxide nano column array material is calculated by the transmitted spectrum of the material.
In the zinc-oxide nano column array material, relative to the zinc oxide of 100 weight portions, the indium
The content (namely doping) of component can be 0.25-5 weight portions, preferably 1-4 weight portions.
In the zinc-oxide nano column array material, the indium component can be phosphide atom and/or indium
Oxide, preferably phosphide atom enter zinc oxide lattice and substitute zinc case or form interstitial atom.
Present invention also offers the electrochemistry of a kind of manipulation zinc-oxide nano column array density and optical band gap
Deposition process, the method includes：Growth substrate is made in the solution containing zinc source presoma, ammonium salt and indium salts
In carry out electrochemical deposition.
In the methods described that the present invention is provided, the nano-pillar of prepared zinc-oxide nano column array material
Array density and spacing and optical band gap can contain zinc source presoma, ammonium salt and indium by the way that adjustment is described
Zinc source presoma, the concentration of ammonium salt and indium salts, electrochemical deposition temperature and current potential in the solution of salt is carried out
Manipulation.Specifically, the density of zinc-oxide nano column array can be 2 × 109cm-2To 16 × 109cm-2's
In the range of regulated and controled, preferably 5.8 × 109cm-2To 14 × 109cm-2In the range of regulated and controled；Oxygen
Changing the optical band gap of zinc nano column array can be regulated and controled in the range of 3.2-3.8eV, preferably be existed
3.6-3.7eV in the range of regulated and controled；The average headway of the adjacent nano post of zinc-oxide nano column array can
To be regulated and controled in the range of 10-20nm.
In the solution containing zinc source presoma, ammonium salt and indium salts, before the ammonium salt and the zinc source
The mol ratio for driving body can be 4-100：1, preferably 10-50：1.
In the solution containing zinc source presoma, ammonium salt and indium salts, before the indium salts and the zinc source
The mol ratio for driving body can be 0.1-2：100, preferably 0.4-1：100.
In the solution containing zinc source presoma, ammonium salt and indium salts, the concentration of zinc source presoma
Can be 1-20mmol/L.Preferably, the concentration of the indium salts is 1-100 μm of ol/L, more preferably
10-50μmol/L；The concentration of the ammonium salt is 10-500mmol/L, more preferably 50-200mmol/L.
In the present invention, the species of zinc source presoma can be with known to those skilled in the art each
The zinc source presoma for being applied to nano zinc oxide material synthesis is planted, for example, zinc source presoma can be selected
At least one from zinc nitrate, zinc acetate, zinc oxalate, zinc sulfate and zinc chloride, preferably zinc nitrate.
In the present invention, the ammonium salt can be various ammonium salts commonly used in the art, for example, can select
At least one from ammonium sulfate, ammonium nitrate, ammonium chloride, ammonium acetate and ammonium oxalate.
In the present invention, it is preferred to, the indium salts are selected from indium nitrate, inidum chloride, indium bromide, indium sulfate
With at least one in indium sulfide.
In the methods described that the present invention is provided, the electrochemical deposition process can be according to this area routine
Method implement.In the preferred case, the condition of the electrochemical deposition can include：Temperature is 60-95
DEG C, more preferably 70-80 DEG C；Current potential is -0.8V to -1.5V, and the time is 15 minutes to 3 hours.
In the present invention, the growth substrate can be various growth substrates commonly used in the art, example
Such as, the growth substrate can be in transparent conductive oxide, metal, fiber, polymer and material with carbon element
At least one, preferably transparent conductive oxide.Wherein, the transparent conductive oxide (TCO)
Substrate be preferably selected from tin indium oxide (ITO), Al-Doped ZnO (AZO), indium-doped zinc oxide (IZO),
In the tin ash (FTO) of gallium-doped zinc oxide (GZO), boron-doping zinc oxide (BZO) and fluorine doped
It is at least one.The metallic substrates are preferably selected from gold, silver, copper or their alloy.The fibrous substrate
Preferably staple or optical fiber.The material with carbon element substrate is preferably CNT or Graphene.The growth base
Bottom can also include the organic or inorganic substrate of other any suitable electrochemical processes.The growth substrate surface
Cover or do not cover the zinc oxide of zinc-oxide film or other metal (such as aluminium, indium, gallium, boron) doping
Film.The zinc-oxide film or other metal-doped zinc oxide films film layers can pass through this area routine
Mode is covered in the surface of growth substrate, such as by way of vacuum sputtering coating.The zinc oxide films
The thickness of film or other metal-doped zinc oxide can be selected according to actual conditions, preferably
30nm-100nm。
Due to different growth substrates, physicochemical properties are different, even if same recipe ingredient, preparation
The optical band gap of zinc-oxide nano column array would also vary from.According to oxygen prepared by the method for the invention
The optical band gap for changing the zinc-oxide nano column array that zinc nano-array is formed in different growth substrates exists
3.2-3.8eV in the range of.And for specific growth substrate, the zinc-oxide nano column array for being formed
Optical band gap there is corresponding scope, for example, the Al-Doped ZnO used using embodiment herein
Used as growth substrate, the excursion of the optical band gap of the zinc-oxide nano column array for being formed is 3.6-3.7
eV。
In the methods described that the present invention is provided, the process of the electrochemical deposition can be normal using this area
The method of rule is implemented, for example, the process of the electrochemical deposition be include to electrode, working electrode and
Electrochemical deposition is carried out in the three-electrode electro Chemical reaction system of reference electrode.Wherein, working electrode connection
Growth substrate；Carbon-point, gold electrode, platinum electrode, preferably platinum electrode are usually to electrode；Reference electrode
Usually saturated calomel electrode, silver chloride electrode, platinum electrode, Mercurous sulfate electrode, mercuric oxide electrode,
Preferably platinum electrode.In the present invention, the electrolyte employed in the electrochemical deposition process is described
Solution containing zinc source presoma, ammonium salt and indium salts.
The present invention provide methods described in, using the growth substrate carry out electrochemical deposition it
Before, growth substrate described in preferred pair is pre-processed to go dirt etc., specific pretreatment operation process
Can include：First the growth substrate is cleaned with organic solvent, then deionized water is rinsed,
Then for example dried up with nitrogen.Organic solvent used by preprocessing process can be acetone and/or second
The mixed solvent of alcohol, preferably acetone and ethanol.The cleaning process of organic solvent is preferably in ultrasonic bath
Carry out.
In the methods described that the present invention is provided, preferably also include being attached with for obtaining after electrochemical deposition
The growth substrate of zinc-oxide nano column array is lowered the temperature, washed and is dried.Generally, it is down to room temperature
, such as 20-35 DEG C, washing, the method being dried and condition may be referred to the common knowledge of this area,
Generally can be washed using deionized water, using inert atmosphere, such as nitrogen is dried up.
Present invention also offers the zinc-oxide nano column array material prepared by said method.The zinc oxide nano
The nano-pole array density of rice post array material can be 2 × 109cm-2To 16 × 109cm-2In the range of enter
Row regulation and control, optical band gap can be regulated and controled in the range of 3.2-3.8eV, it is preferable that the zinc oxide
The nano-pole array density of nano column array material can be 5.8 × 109cm-2To 14 × 109cm-2Scope
Inside regulated and controled, optical band gap can be regulated and controled in the range of 3.6-3.7eV.
By the following examples the invention will be further described.
In the following Examples and Comparative Examples, the nano-pillar average headway and array of zinc-oxide nano column array
Density is determined by the statistical estimation of scanning electron microscopic picture, and test equipment is the FEI Nova of FEI Co.
NanoSEM450 SEM.The optical band gap of zinc-oxide nano column array material passes through the material
The transmitted spectrum of material is calculated, test equipment be Shimadzu Corporation Shimadzu UV3600, test spectral
Scope is 240-2400nm.
Growth substrate used is aluminum-doped zinc oxide transparent electro-conductive glass in following examples and comparative example, its
Thickness is 2mm, purchased from Zhuhai Kaivo Electronic Components Co., Ltd..In electrochemical deposition system,
It is platinum electrode to electrode, reference electrode is platinum electrode.
Embodiment 1
The present embodiment is used to illustrate zinc-oxide nano column array material provided by the present invention and manipulation oxidation
The electrochemical deposition method of zinc nano-pole array density and optical band gap.
Growth substrate is cut into into required size, then respectively in organic solvent-acetone and the ultrasonic wave of ethanol
2min is cleaned in bath, subsequent deionized water is rinsed, and nitrogen is dried up.
Prepare electrolyte aqueous solution：According to each component content configuration electrolyte aqueous solution described in table 1.Nitric acid
In water, molar concentration is 5mmol/L to zinc ultrasonic dissolution；Ammonium nitrate is subsequently adding, ultrasonic dissolution rubs
Your concentration is 50mmol/L；Indium nitrate, ultrasonic dissolution are subsequently added, molar concentration is 10 μm of ol/L.
Electrochemical deposition：Growth substrate is put in above-mentioned electrolyte aqueous solution, three electrode constant potentials are carried out
The electrochemical deposition of constant temperature.Under potentiostatic mode, sedimentation potential is -1.32V, and depositing temperature is 75
DEG C, sedimentation time is 1200 seconds.
Sample clean：After end to be deposited, above-mentioned deposition there is into the growth substrate drop of nano zinc oxide material
To room temperature, then deionized water is washed, and nitrogen is dried up, so as to zinc-oxide nano column array is obtained
The test result of materials A 1, its nano-pillar average headway and array density and optical band gap is referring to following table
1。
Embodiment 2 to 6
The present embodiment is used to illustrate zinc-oxide nano column array material provided by the present invention and manipulation oxidation
The electrochemical deposition method of zinc nano-pole array density and optical band gap.
Method according to embodiment 1 prepares zinc-oxide nano column array material, except that, embodiment
The content of each component electrolyte will be prepared according to described in table 1 in 2 to 6, so as to oxidation is obtained
Zinc nano column array materials A 2-A6, its adjacent nano-pillar average headway and array density and optical ribbon
The test result of gap is referring to table 1 below.
Shown in SEM photograph such as Fig. 1 (b) of zinc-oxide nano column array materials A 3 prepared by embodiment 3.
X-ray spectrum (EDX) data of zinc-oxide nano column array materials A 3 prepared by embodiment 3
As a result Fig. 2 is seen, the optical band gap spectrogram of zinc-oxide nano column array materials A 3 prepared by embodiment 3 is such as
Shown in Fig. 3 (b).
Comparative example 1
Method according to embodiment 1 prepares zinc-oxide nano column array material, except that, electrolyte
The aqueous solution does not contain ammonium salt and indium salts, and so as to zinc-oxide nano column array material D1 is obtained, its is adjacent
The test result of nano-pillar average headway and array density and optical band gap is referring to table 1 below.
The SEM photograph and optical band gap spectrum of zinc-oxide nano column array material D1 prepared by comparative example 1
Figure is as shown in Fig. 1 (a) and Fig. 3 (a).
Comparative example 2
Method according to embodiment 1 prepares zinc-oxide nano column array material, except that, electrolyte
The aqueous solution does not contain ammonium salt, and the molar concentration of indium salts is 10 μm of ol/L, so as to zinc-oxide nano column is obtained
Array material D2, the test knot of its adjacent nano-pillar average headway and array density and optical band gap
Fruit is referring to table 1 below.
Comparative example 3
Method according to embodiment 1 prepares zinc-oxide nano column array material, except that, electrolyte
The aqueous solution does not contain indium salts, and the molar concentration of ammonium salt is 100mmol/L, so as to zinc-oxide nano column is obtained
Array material D3, the test knot of its adjacent nano-pillar average headway and array density and optical band gap
Fruit is referring to table 1 below.
Table 1
First, referring to Fig. 2, the energy dispersion X of the zinc-oxide nano column array by analyzing embodiment 3
Ray spectrum (EDX) data result, the zinc-oxide nano column array prepared according to the inventive method
The weight/mass percentage composition for having the signal peak of obvious phosphide element, phosphide element in EDX energy spectrum diagrams is：3.64%.
This is absolutely proved, by the method for the invention, phosphide element doping enters zinc-oxide nano column array, institute
Stating indium component existing way can be：Phosphide atom enters zinc oxide lattice and substitutes zinc case or form gap original
Son.
Fig. 3 show the optical band gap spectrogram of the zinc-oxide nano column array prepared using the inventive method,
Data from spectrogram can draw the optical band gap numerical value of comparative example and embodiment, and its excursion is：
3.6-3.7eV.By the way that comparative example 1-3 and embodiment 1-6 are compared as can be seen that according to the present invention
Method a certain amount of ammonium salt and indium salts are added in electrolyte aqueous solution, prepared by electro-deposition
The spacing of zinc-oxide nano column array, density and optical band gap are controllable.In comparative example 1 and right
In ratio 3, the concentration of indium salts is zero, and as the concentration of ammonium salt increases, nanometer intercolumniation is increased from zero to
38nm, the array density of zinc-oxide nano column array material is from 8.8 × 109cm-2It is reduced to 6.0 × 109cm-2,
32% is reduced, but its optical band gap does not change, optical band gap is 3.61eV.By right
Ratio 1 compares with comparative example 2 to be found out, when indium salts are contained in electrolyte solution, the zinc-oxide nano column
Array material nanometer intercolumniation increases to 11nm, but nanometer column diameter is reduced to 50nm from 88nm,
Therefore, array density increases, from 8.8 × 109cm-2Increase to 12 × 109cm-2, and optical band gap
Obvious change is given birth to, optical band gap increases to 3.65eV from 3.61eV.By comparative example 1 and contrast
Example 3 compares with embodiment 1 as can be seen that adding for ammonium salt is so that receiving for zinc-oxide nano column array material
Rice intercolumniation increase, the addition of indium salts causes the optical band gap of zinc-oxide nano column array material to become
Change.In the method for the invention, during electrochemical deposition nanometer zinc oxide array material, ammonium salt with
The addition of indium salts, can be very good while between the nano column array of regulation and control zinc oxide nano array material
Away from, array density and optical band gap.In embodiment 1-6, when adding 10-50 in electrolyte aqueous solution
After μm ol/L indium salts, optical band gap is changed into 3.63-3.66eV, and with the change of ammonium salt concentration, oxygen
The array density for changing zinc nano column array material changes.Especially in embodiment 3 and 4, work as ammonium salt
Concentration is increased to 100mmol/L from 50mmol/L, and nanometer column diameter is increased to 97nm from 42nm,
Array density is from 13.7 × 109cm-2It is reduced to 6.14 × 109cm-2.From embodiment 1-6 (preferred embodiment
3-6) can be seen that by changing preparation condition with the Data Comparison in comparative example 1-3, change in formula
The concentration of indium salts and ammonium salt, can success while manipulate the spacing of zinc-oxide nano column array, density with
And optical band gap.
The preferred embodiment of the present invention is described in detail above in association with accompanying drawing, but, the present invention is not limited
Detail in above-mentioned embodiment, in the range of the technology design of the present invention, can be to the present invention
Technical scheme carry out various simple variants, these simple variants belong to protection scope of the present invention.
It is further to note that each particular technique described in above-mentioned specific embodiment is special
Levy, in the case of reconcilable, can be combined by any suitable means, in order to avoid need not
The repetition wanted, the present invention is no longer separately illustrated to various possible combinations.
Additionally, can also be combined between a variety of embodiments of the present invention, as long as its
Without prejudice to the thought of the present invention, it should equally be considered as content disclosed in this invention.
Claims (13)
1. a kind of zinc-oxide nano column array material, it is characterised in that the zinc-oxide nano column array material
Doped with indium component, the density of nano column array is 2 × 10 to material9cm-2To 16 × 109cm-2, optical band gap
For 3.2-3.8eV.
2. zinc-oxide nano column array material according to claim 1, wherein, the zinc oxide nano
The density of the nano column array of rice post array material is 5.8 × 109cm-2To 14 × 109cm-2, optical band gap
For 3.6-3.7eV.
3. zinc-oxide nano column array material according to claim 1 or claim 2, wherein, adjacent receives
The average headway of meter Zhu is 10-20nm.
4. zinc-oxide nano column array material according to claim 1, wherein, relative to 100
The zinc oxide of weight portion, the content of the indium component is 0.25-5 weight portions.
5. the zinc-oxide nano column array material according to claim 1 or 4, wherein, the indium
Component is the oxide of phosphide atom and/or indium.
6. a kind of electrochemical deposition method of manipulation zinc-oxide nano column array density and optical band gap, its
It is characterised by, the method includes：Growth substrate is made in the solution containing zinc source presoma, ammonium salt and indium salts
In carry out electrochemical deposition.
7. method according to claim 6, wherein, described containing zinc source presoma, ammonium salt
In the solution of indium salts, the ammonium salt is 4-100 with the mol ratio of zinc source presoma：1.
8. method according to claim 6, wherein, described containing zinc source presoma, ammonium salt
In the solution of indium salts, the indium salts are 0.1-2 with the mol ratio of zinc source presoma：100.
9. the method according to any one in claim 6-8, wherein, described containing zinc source
In the solution of presoma, ammonium salt and indium salts, the concentration of zinc source presoma is 1-20mmol/L.
10. the method according to any one in claim 6-9, wherein, zinc source presoma
At least one in zinc nitrate, zinc acetate, zinc oxalate, zinc sulfate and zinc chloride；The ammonium salt choosing
At least one from ammonium sulfate, ammonium nitrate, ammonium chloride, ammonium acetate and ammonium oxalate；The indium salts are selected from
At least one in indium nitrate, inidum chloride, indium bromide, indium sulfate and indium sulfide.
11. methods according to any one in claim 6-10, wherein, the electrochemistry is sunk
Long-pending condition includes：Temperature is 60-95 DEG C, and current potential is -0.8V to -1.5V, and the time is 15 minutes to 3
Hour.
12. methods according to claim 6, wherein, the growth substrate is transparent conductive oxide
At least one in thing, metal, fiber, polymer and material with carbon element, the transparent conductive oxide substrate
Selected from tin indium oxide, Al-Doped ZnO, indium-doped zinc oxide, gallium-doped zinc oxide, boron-doping zinc oxide and fluorine doped
Tin ash at least one, the metal be gold, silver, copper or their alloy, the fiber
For staple or optical fiber, the material with carbon element is CNT or Graphene；The growth substrate surface cover or
The zinc-oxide film of zinc-oxide film or doping is not covered.
Zinc-oxide nano column array prepared by 13. methods by described in any one in claim 6-12
Material.
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