CN106587149A - Method for producing bismuth vanadate film through two-step technology - Google Patents
Method for producing bismuth vanadate film through two-step technology Download PDFInfo
- Publication number
- CN106587149A CN106587149A CN201610977924.6A CN201610977924A CN106587149A CN 106587149 A CN106587149 A CN 106587149A CN 201610977924 A CN201610977924 A CN 201610977924A CN 106587149 A CN106587149 A CN 106587149A
- Authority
- CN
- China
- Prior art keywords
- thin film
- bismuth
- vanadic acid
- preparation
- hydro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052797 bismuth Inorganic materials 0.000 title claims abstract description 26
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 title claims abstract description 26
- 238000005516 engineering process Methods 0.000 title abstract description 5
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 title abstract 2
- 238000000034 method Methods 0.000 claims abstract description 13
- UNTBPXHCXVWYOI-UHFFFAOYSA-O azanium;oxido(dioxo)vanadium Chemical compound [NH4+].[O-][V](=O)=O UNTBPXHCXVWYOI-UHFFFAOYSA-O 0.000 claims abstract description 8
- 238000006243 chemical reaction Methods 0.000 claims abstract description 8
- 238000004070 electrodeposition Methods 0.000 claims abstract description 7
- 239000011521 glass Substances 0.000 claims abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract 2
- 239000010409 thin film Substances 0.000 claims description 37
- WQEVDHBJGNOKKO-UHFFFAOYSA-K vanadic acid Chemical compound O[V](O)(O)=O WQEVDHBJGNOKKO-UHFFFAOYSA-K 0.000 claims description 22
- ORZGULPODBRYCV-UHFFFAOYSA-M bismuth;oxygen(2-);iodide Chemical compound [O-2].[I-].[Bi+3] ORZGULPODBRYCV-UHFFFAOYSA-M 0.000 claims description 16
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 claims description 15
- 238000002360 preparation method Methods 0.000 claims description 11
- 238000004062 sedimentation Methods 0.000 claims description 9
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 7
- 239000010408 film Substances 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- 229960000935 dehydrated alcohol Drugs 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- UOZDOLIXBYLRAC-UHFFFAOYSA-L [2-hydroxy-3-(trimethylazaniumyl)propyl]-trimethylazanium;diiodide Chemical compound [I-].[I-].C[N+](C)(C)CC(O)C[N+](C)(C)C UOZDOLIXBYLRAC-UHFFFAOYSA-L 0.000 claims description 2
- 230000005518 electrochemistry Effects 0.000 claims description 2
- WOAHJDHKFWSLKE-UHFFFAOYSA-N 1,2-benzoquinone Chemical compound O=C1C=CC=CC1=O WOAHJDHKFWSLKE-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000005352 clarification Methods 0.000 claims 1
- 239000003792 electrolyte Substances 0.000 claims 1
- 150000004677 hydrates Chemical class 0.000 claims 1
- 238000003786 synthesis reaction Methods 0.000 claims 1
- KOECRLKKXSXCPB-UHFFFAOYSA-K triiodobismuthane Chemical compound I[Bi](I)I KOECRLKKXSXCPB-UHFFFAOYSA-K 0.000 claims 1
- 230000007613 environmental effect Effects 0.000 abstract description 3
- CBACFHTXHGHTMH-UHFFFAOYSA-N 2-piperidin-1-ylethyl 2-phenyl-2-piperidin-1-ylacetate;dihydrochloride Chemical compound Cl.Cl.C1CCCCN1C(C=1C=CC=CC=1)C(=O)OCCN1CCCCC1 CBACFHTXHGHTMH-UHFFFAOYSA-N 0.000 abstract 5
- 239000007795 chemical reaction product Substances 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 230000004298 light response Effects 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 229940005561 1,4-benzoquinone Drugs 0.000 description 3
- 238000006555 catalytic reaction Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000003054 catalyst Substances 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical group [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229910002915 BiVO4 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910003206 NH4VO3 Inorganic materials 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910021607 Silver chloride Inorganic materials 0.000 description 1
- PRXLCSIMRQFQMX-UHFFFAOYSA-N [O].[I] Chemical compound [O].[I] PRXLCSIMRQFQMX-UHFFFAOYSA-N 0.000 description 1
- 238000000862 absorption spectrum Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- UBAZGMLMVVQSCD-UHFFFAOYSA-N carbon dioxide;molecular oxygen Chemical compound O=O.O=C=O UBAZGMLMVVQSCD-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000007210 heterogeneous catalysis Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 238000013033 photocatalytic degradation reaction Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- HKZLPVFGJNLROG-UHFFFAOYSA-M silver monochloride Chemical compound [Cl-].[Ag+] HKZLPVFGJNLROG-UHFFFAOYSA-M 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 239000003643 water by type Substances 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical group [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G31/00—Compounds of vanadium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J23/00—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00
- B01J23/16—Catalysts comprising metals or metal oxides or hydroxides, not provided for in group B01J21/00 of arsenic, antimony, bismuth, vanadium, niobium, tantalum, polonium, chromium, molybdenum, tungsten, manganese, technetium or rhenium
- B01J23/20—Vanadium, niobium or tantalum
- B01J23/22—Vanadium
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J35/00—Catalysts, in general, characterised by their form or physical properties
- B01J35/30—Catalysts, in general, characterised by their form or physical properties characterised by their physical properties
- B01J35/39—Photocatalytic properties
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Catalysts (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Abstract
The invention relates to a method for producing a bismuth vanadate film through a two-step technology. The method comprises the following steps: depositing a bismuth oxyiodide (BiOI) film on a glass substrate through an electrodeposition technology, carrying out a reaction on the bismuth oxyiodide film and an ammonium metavanadate solution in a reaction kettle by using a hydrothermal technology at 180 DEG C for 24 h, taking out the obtained reaction product, and washing and drying the reaction product to obtain the final film sample. The bismuth oxyiodide film with good uniformity, high visible light response and excellent performances can be obtained through controlling the electrodeposition parameters of bismuth oxyiodide and the hydrothermal time duration. The production method has the characteristics of simple process, easiness in operation, mild reaction conditions, low cost, energy saving and environmental protection.
Description
Technical field
The present invention relates to the use of the method that two-step method prepares vanadic acid bismuth thin film.
Background technology
Environmental pollution and energy crisis are two hang-ups most in the urgent need to address that today's society faces.In numerous environment
In Treatment process, conductor oxidate can utilize sunlight as driving force to realize heterogeneous catalysiss and can as catalyst
To be reacted at room temperature, with decomposing organic matter, decompose Aquatic product hydrogen product oxygen, carbon dioxide reduction and reducing heavy metal ion
Etc. function.Semiconductor light-catalyst stable performance, cheap, can effectively degrade most of Organic substance, resistance to chemical attack, therefore
There is very big application prospect in terms of environmental improvement.
Wherein, quasiconductor pucherite has obtained increasing concern due to its good visible light catalysis activity.Vanadic acid
Bismuth mainly has three kinds of crystal structures, respectively cubic scheelite-type structure, monocline scheelite-type structure and cubic zircon structure, its band gap
About 2.4eV, with good visible light catalysis activity, it is possible to achieve degraded of the hole to Organic substance, and its valence band location
Positioned at 2.4eV, it is seen that decompose the very capable of Aquatic product oxygen under light.Vanadic acid bismuth thin film as light anode, under applied voltage effect,
The separation in electronics and hole can be effectively realized, so as to represent good catalysis activity.And it prepares simple, stability height, does not have
It is toxic, be a kind of photocatalyst of great potential, can be widely used for the environmental improvements such as photocatalytic degradation of dye and decomposition water with
And the exploitation aspect of new forms of energy.
Tradition prepares the method for pucherite and has that high energy consumption, film quality be poor, the low shortcoming of yield rate.The present invention adopts two
The method that footwork prepares vanadic acid bismuth thin film.Select five nitric hydrate bismuths to be bismuth source, potassium iodide is propiodal, add 1,4-benzoquinone to prepare
Basic bismuth iodide precursor solution.Using electrochemical deposition method, using FTO sheet glass as working electrode, silver/silver chloride is used as reference
Electrode, used as to electrode, running voltage is -0.1V to platinum filament, and sedimentation time is 300s, prepares Basic bismuth iodide thin film.Select inclined
Ammonium vanadate is vanadium source, using hydro-thermal method, Basic bismuth iodide thin film is put in the reactor equipped with 50mL ammonium metavanadate solutions, hydro-thermal
Temperature is 180 DEG C, and the time is 18h, and deionized water cleans sample and obtains final film sample.By control sedimentation time and
Hydro-thermal duration etc., it is possible to obtain compactness is good, uniformity is good, visible light-responded high vanadic acid bismuth thin film.The preparation side of the present invention
Method cost is relatively low, easily operated, and reaction condition is gentle, with energy-conservation, eco-friendly characteristic.,
The content of the invention
It is an object of the invention to provide a kind of method for preparing high-quality vanadic acid bismuth thin film.Our dispensing low cost used,
Reaction condition is gentle, obtains pucherite film quality and stability is preferable；Overcome high energy consumption needed for prior art, it is of poor quality,
The defect of high cost.
The present invention is a kind of preparation method of vanadic acid bismuth thin film, it is characterized by with five nitric hydrate bismuths, potassium iodide and inclined vanadium
Sour ammonium is raw material, and potassium iodide is dissolved in deionized water first, adds five nitric hydrate bismuths, after stirring, adds dilute HNO3
Adjust pH to 1.7.Add and be dissolved in the subsequent with transparent conducting glass (FTO) as working electrode of dehydrated alcohol, using electrochemistry
Sedimentation, running voltage is -0.1V, and sedimentation time is 300s, obtains Basic bismuth iodide thin film.Then by ammonium metavanadate be dissolved in from
In sub- water, Basic bismuth iodide thin film and ammonium metavanadate are placed in reactor, hydro-thermal reaction 18h, temperature is 180 DEG C, is finally obtained
Obtain vanadic acid bismuth thin film.
The thin film of the different thickness can be controlled by sedimentation time and hydro-thermal duration, the thin film grain size of preparation
It is identical.The reaction mechanism is as follows：
Under conditions of back bias voltage, 1,4-benzoquinone will be reduced into Pyrogentisinic Acid, so that the local ph around running voltage
Raise, so Basic bismuth iodide is deposited on the working electrode (s, finally give film sample.
In hydro-thermal reaction, the iodine oxygen root of Basic bismuth iodide is replaced by vanadic acid root, finally gives vanadic acid bismuth thin film.
BiOI+NH4VO3→BiVO4
Description of the drawings
Fig. 1 is the XRD spectrum of vanadic acid bismuth thin film and Basic bismuth iodide thin film
Fig. 2 is the visible absorption spectrum of vanadic acid bismuth thin film
Fig. 3 is the scanning electron microscope image of vanadic acid bismuth thin film
Specific embodiment
1. first 3.32g potassium iodide is dissolved in 50mL deionized waters, adds the nitric hydrate bismuths of 0.97g five, stirring is equal
Dilute HNO of 600uL 1mol/L is added after even3；
2. 0.49g 1,4-benzoquinone is dissolved in into 20mL dehydrated alcohol；
3. two solution are mixed, stand 2 hours；
4. electrodeposition process is adopted, and running voltage is -0.1V, sedimentation time 300s, prepares Basic bismuth iodide thin film；
The ammonium metavanadate solution of configuration 50mL 0.1mol/L, reactor is proceeded to by it with Basic bismuth iodide thin film.Hydrothermal temperature
For 180 DEG C, reaction duration 18 hours obtains pucherite film sample.
Claims (8)
1. a kind of preparation method for preparing vanadic acid bismuth thin film, it is characterised in that：First sunk on the glass substrate using electro-deposition method
Product Basic bismuth iodide (BiOI) thin film, then using hydro-thermal method, Basic bismuth iodide thin film and ammonium metavanadate solution is put in reactor,
The reaction at 180 DEG C obtains film sample in 18 hours.
2. the preparation method of vanadic acid bismuth thin film according to claim 1, it is characterised in that：Basic bismuth iodide thin film is first deposited,
Again hydro-thermal method synthesizes pucherite.
3. the preparation method of Basic bismuth iodide thin film according to claim 1, it is characterised in that：Using potassium iodide as propiodal,
In being dissolved in deionized water, concentration is 0.4mol/L；Five nitric hydrate bismuths add five nitric hydrates as bismuth source in above-mentioned solution
Bismuth, concentration is 0.04mol/L.Stir to solution clarification, add dilute HNO of 1mol/L3Solution, makes pH value be about 1.7.Will be to benzene
Quinone is dissolved in dehydrated alcohol, and concentration is 0.23mol/L, in adding above-mentioned solution.The solution matched somebody with somebody uses electrochemistry as electrolyte
Sedimentation prepares Basic bismuth iodide thin film.Running voltage is -0.1V, and sedimentation time is 300s.
4. the preparation method of vanadic acid bismuth thin film according to claim 1, it is characterised in that：Pucherite is prepared using hydro-thermal method
Thin film.Configuration ammonium metavanadate solution, concentration is 0.1mol/L.The hydro-thermal time is 18h, and hydrothermal temperature is 180 DEG C.
5. the preparation method of vanadic acid bismuth thin film according to claim 1, it is characterised in that：Can be by the work of electro-deposition
Voltage controls the thickness of Basic bismuth iodide.
6. the preparation method of vanadic acid bismuth thin film according to claim 1 or 5, it is characterised in that：Electro-deposition can be passed through
Sedimentation time controls the thickness of thin film.
7. the preparation method of vanadic acid bismuth thin film according to claim 1, it is characterised in that：Can be by controlling hydro-thermal reaction
Temperature and time control thin film thickness.
8. the preparation method of vanadic acid bismuth thin film according to claim 1, it is characterised in that：Hydro-thermal is carried out to vanadic acid bismuth thin film
The temperature of synthesis is 180 DEG C, and the time is 18 hours.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610977924.6A CN106587149A (en) | 2016-11-08 | 2016-11-08 | Method for producing bismuth vanadate film through two-step technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610977924.6A CN106587149A (en) | 2016-11-08 | 2016-11-08 | Method for producing bismuth vanadate film through two-step technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106587149A true CN106587149A (en) | 2017-04-26 |
Family
ID=58590017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610977924.6A Pending CN106587149A (en) | 2016-11-08 | 2016-11-08 | Method for producing bismuth vanadate film through two-step technology |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106587149A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108987569A (en) * | 2018-07-27 | 2018-12-11 | 河北大学 | A kind of memristor based on bismuth oxyiodide film, preparation method and application |
| CN109569630A (en) * | 2019-01-23 | 2019-04-05 | 西北师范大学 | A kind of pucherite composite material preparation loading nickel cobalt hydrotalcite nano particle and the application in photoelectricity water oxygen |
| CN110047657A (en) * | 2019-04-02 | 2019-07-23 | 常州大学 | A kind of compound preparation method for mixing molybdenum pucherite light anode of MIL series MOF |
| CN110656364A (en) * | 2019-09-30 | 2020-01-07 | 清华大学 | Method for preparing large-area bismuth vanadate film based on electrodeposition method |
| CN110923747A (en) * | 2019-12-09 | 2020-03-27 | 中国石油大学(华东) | Preparation method of bismuth ferrite photocatalytic film electrodeposition |
| CN111617783A (en) * | 2020-06-05 | 2020-09-04 | 吉林大学 | Dark red BiOI submicron sphere catalyst containing oxygen vacancies, preparation method and application thereof in hydrogen production by photocatalytic water decomposition |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6464772B1 (en) * | 1999-11-22 | 2002-10-15 | Gebroeders Cappelle N.V. | Bismuth-based pigments and process for their manufacture |
| CN103107242A (en) * | 2013-01-29 | 2013-05-15 | 上海交通大学 | Method for preparing bismuth vanadate solar cell on glass substrate |
| CN105344348A (en) * | 2015-09-08 | 2016-02-24 | 徐州医学院 | Preparation method for BiVO4 thin film with visible light catalysis property |
-
2016
- 2016-11-08 CN CN201610977924.6A patent/CN106587149A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6464772B1 (en) * | 1999-11-22 | 2002-10-15 | Gebroeders Cappelle N.V. | Bismuth-based pigments and process for their manufacture |
| CN103107242A (en) * | 2013-01-29 | 2013-05-15 | 上海交通大学 | Method for preparing bismuth vanadate solar cell on glass substrate |
| CN105344348A (en) * | 2015-09-08 | 2016-02-24 | 徐州医学院 | Preparation method for BiVO4 thin film with visible light catalysis property |
Non-Patent Citations (1)
| Title |
|---|
| KENNETH J. MCDONALD等: "A new electrochemical synthesis route for a BiOI electrode and its conversion to a highly efficient porous BiVO4 photoanode for solar water oxidation", 《THE ROYAL SOCIETY OF CHEMISTRY》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108987569A (en) * | 2018-07-27 | 2018-12-11 | 河北大学 | A kind of memristor based on bismuth oxyiodide film, preparation method and application |
| CN109569630A (en) * | 2019-01-23 | 2019-04-05 | 西北师范大学 | A kind of pucherite composite material preparation loading nickel cobalt hydrotalcite nano particle and the application in photoelectricity water oxygen |
| CN110047657A (en) * | 2019-04-02 | 2019-07-23 | 常州大学 | A kind of compound preparation method for mixing molybdenum pucherite light anode of MIL series MOF |
| CN110656364A (en) * | 2019-09-30 | 2020-01-07 | 清华大学 | Method for preparing large-area bismuth vanadate film based on electrodeposition method |
| CN110923747A (en) * | 2019-12-09 | 2020-03-27 | 中国石油大学(华东) | Preparation method of bismuth ferrite photocatalytic film electrodeposition |
| CN111617783A (en) * | 2020-06-05 | 2020-09-04 | 吉林大学 | Dark red BiOI submicron sphere catalyst containing oxygen vacancies, preparation method and application thereof in hydrogen production by photocatalytic water decomposition |
| CN111617783B (en) * | 2020-06-05 | 2022-08-30 | 吉林大学 | Dark red BiOI submicron sphere catalyst containing oxygen vacancies, preparation method and application thereof in hydrogen production by photocatalytic water decomposition |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106587149A (en) | Method for producing bismuth vanadate film through two-step technology | |
| Yoshino et al. | Photocatalytic CO2 reduction using water as an electron donor under visible light irradiation by Z-scheme and photoelectrochemical systems over (CuGa) 0.5 ZnS2 in the presence of basic additives | |
| Kim et al. | Artificial photosynthesis for high‐value‐added chemicals: old material, new opportunity | |
| Liu et al. | Enhanced photocatalysis on TiO2 nanotube arrays modified with molecularly imprinted TiO2 thin film | |
| CN108842169B (en) | Metal oxide loaded bismuth vanadate composite material and preparation and application thereof | |
| Nagakawa et al. | Visible-light overall water splitting by CdS/WO3/CdWO4 tricomposite photocatalyst suppressing photocorrosion | |
| US20200165148A1 (en) | A method using photocatalytic electrode coupled with microbial fuel cell to promote treatment of coking wastewater | |
| Ketir et al. | Preparation, characterization and application of CuCrO2/ZnO photocatalysts for the reduction of Cr (VI) | |
| Chen et al. | Visible light-driven H2O2 synthesis by a Cu3BiS3 photocathode via a photoelectrochemical indirect two-electron oxygen reduction reaction | |
| Liu et al. | Alkali-mediated dissolution-recrystallization strategy for in situ construction of a BiVO4/Bi25VO40 heterojunction with promoted interfacial charge transfer: Formation mechanism and photocatalytic tetracycline degradation studies | |
| Wang et al. | Electrochemical performance and electroreduction of maleic acid on Ce-doped nano-TiO2 film electrode | |
| CN112958116B (en) | Bi2O2.33-CdS composite photocatalyst and preparation process thereof | |
| CN112777634B (en) | Preparation method of bismuth vanadate with high (010) crystal face exposure ratio | |
| CN109589993A (en) | Pucherite-molybdenum sulfide-cobaltosic oxide catalysis electrode of electrochemical modification and its preparation method and application | |
| Su et al. | Mass transport-enhanced electrodeposition for the efficient recovery of copper and selenium from sulfuric acid solution | |
| Ghayeb et al. | Effect of silver sulfide decorating on structural, optical and photo catalytic properties of iron-doped titanium dioxide nanotubes films | |
| Feng et al. | Phase-dependent photocatalytic selective oxidation of cyclohexane over copper vanadates | |
| Sun et al. | Flame-assisted pyrolysis formation of Cu2O/Cu/TiO2 nanotube arrays to boost superior photo-electrochemical response | |
| Shan et al. | BiVO 4 (010)/rGO Nanocomposite and Its Photocatalysis Application | |
| Li et al. | Synthesis of vertical WO 3 nanoarrays with different morphologies using the same protocol for enhanced photocatalytic and photoelectrocatalytic performances | |
| CN109133259A (en) | A method of utilizing light anode activation sulfuric acid salt treatment waste water and by-product hydrogen | |
| CN106319553A (en) | Method for obtaining Ce(IV) by conducting photoelectric catalysis oxidation on Ce(III), Ce(IV) and application | |
| Al-Ani et al. | Enhancement of photoconversion efficiency and light harvesting ability of TiO2 nanotube-arrays with Cu2ZnSnS4 | |
| Zhang et al. | Photoelectrochemical performance of birnessite films and photoelectrocatalytic activity toward oxidation of phenol | |
| CN110158110A (en) | A kind of self-supporting WO3The preparation method and application of light anode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20170426 |
|
| WD01 | Invention patent application deemed withdrawn after publication |