CN106567039A - A MoS2/Ag/MoS2 semiconductor film material and a preparing method thereof - Google Patents

A MoS2/Ag/MoS2 semiconductor film material and a preparing method thereof Download PDF

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CN106567039A
CN106567039A CN201610902366.7A CN201610902366A CN106567039A CN 106567039 A CN106567039 A CN 106567039A CN 201610902366 A CN201610902366 A CN 201610902366A CN 106567039 A CN106567039 A CN 106567039A
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layer
mos2
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film material
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CN106567039B (en
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郝兰众
刘云杰
韩治德
薛庆忠
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China University of Petroleum East China
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China University of Petroleum East China
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0623—Sulfides, selenides or tellurides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/18—Metallic material, boron or silicon on other inorganic substrates
    • C23C14/185—Metallic material, boron or silicon on other inorganic substrates by cathodic sputtering

Abstract

A MoS2/Ag/MoS2 semiconductor film material and a preparing method thereof are disclosed. The film has a layered structure, and includes a top MoS2 film layer, a Ag metal layer, a bottom MoS2 film layer and an intrinsic insulating Si substrate in order from top to bottom. According to the method, a DC magnetron sputtering technique is mainly adopted, and high-energy electrons are utilized to bombard different target material surfaces in order, wherein a MoS2 target material is firstly used to deposit the bottom MoS2 film layer on the Si substrate, then a metal Ag target material is utilized to deposit the Ag metal layer on the bottom MoS2 film layer, and the MoS2 target material is utilized finally to deposit the top MoS2 film layer on the Ag metal layer. Compared with pure MoS2 film products, the specific resistance of the MoS2/Ag/MoS2 semiconductor film is reduced by 4 or more orders of magnitudes. According to the film material and the method, the process is simple, parameter control is simple and convenient, the yield is high, product quality stability and reliability are good, the manufacturing cost is low and the film material and the method are suitable for industrial production.

Description

A kind of MoS2/Ag/MoS2Semiconductor film material and preparation method thereof
Technical field
The present invention relates to a kind of semi-conducting material and preparation method thereof, more particularly to a kind of MoS2/Ag/MoS2Semiconductor film Membrane material and preparation method thereof.
Background technology
Molybdenum bisuphide itself is non-conductive, but with diamagnetism, can be used as linear photoconductor conductor and show that p-type or N-type are conductive The quasiconductor of performance, the effect with rectification and transducing.
It is closely linked with covalent bond because molybdenum disulfide film material has in typical layer structure, layer, often Individual Mo atoms are surrounded by six S atoms, in triangular prism column；Then combined with weaker Van der Waals force between layers, easily Slip away.
The said structure feature of molybdenum bisuphide causes its resistivity very big, carrier transport poor-performing so as to half The application of conductor and devices field receives serious obstruction.
To reduce MoS2The resistivity of thin-film material, its electric conductivity is improved, to meet MoS2Thin-film material is in semiconductor device The use in part field.In prior art, relatively successful way is, using metallic element to MoS2It is doped, to enter Row MoS2Material modification.For example：
Wu Chen et al. (《Micro-nano electronic technology》, 2014,08) disclose " Ag adulterate to MoS2The impact of film characteristics " is ground Study carefully result, Ag doping MoS are prepared on p-type electric-conducting Si substrates using chemical vapour deposition technique2Thin-film material；
Chinese patent ZL201510558994.3 discloses a kind of Pd-MoS2Heterojunction photovoltaic solar cell device and its Preparation method, its technological means for adopting are to carry out MoS using Pd metallic elements2Doping treatment.
But, this use metallic element is to MoS2It is doped, to carry out MoS2The method of material modification, its principle is equal Metallic element is entered in molybdenum bisuphide lattice, to replace molybdenum bisuphide in original molybdenum element.Due to atomic radius, obtain The difference of the aspects such as betatopic ability, this doping techniques necessarily form a large amount of defects in molybdenum bisuphide, so as to cause product Material structure and performance unstability.
In other words, using the technological means of doping, to carry out MoS2Thin-film material it is modified, its properties of product it is consistent Property, stability are relatively poor, and the control difficulty of product quality is big.
What is more important, the MoS for technical field of semiconductor device, after this kind of doping vario-property2Thin-film material, Its resistivity is still higher, electric conductivity is still undesirable.
The content of the invention
It is an object of the invention to provide a kind of MoS with excellent conductive performance2/Ag/MoS2Semiconductor film membrane material Material.
The technical problem of present invention solution required for achieving the above object is how effectively to reduce MoS2Thin-film material The technical problem of resistivity.
The technical scheme that adopted for achieving the above object of the present invention is, a kind of MoS2/Ag/MoS2Semiconductor film material, Characterized in that, being layer structure, top layer MoS is from top to bottom included successively2Thin layer, Ag metal levels, bottom MoS2Thin layer and Si substrates；Wherein：
The Si substrates are the non-conductive monocrystal materials of intrinsic insulation, and single-sided polishing, burnishing surface is upper surface；
The MoS2Thin layer, its purity is 99.9%；
The Ag metal levels, its purity is 99.99%；
The top layer MoS2Thin layer, Ag metal levels, bottom MoS2The thickness of thin layer be respectively 50nm, 3-10nm and 50nm。
What above-mentioned technical proposal was directly brought has the technical effect that, in top layer MoS2Thin layer and bottom MoS2Between thin layer One layer thin Ag metal level of insertion, significantly reduces MoS2The resistivity value of thin-film material, significantly improves MoS2Thin-film material is led Electrical property, and the MoS for being formed2/Ag/MoS2The Stability Analysis of Structures of thin film, performance repeatability is strong.
Testing result shows, using the MoS obtained by above-mentioned technical proposal2/Ag/MoS2Thin-film material, electronic carrier is dense Degree, electron mobility respectively reach 8.3 × 1022cm-3And 8.5cm2V-1s-1。
These performance parameters with have pure MoS2Thin-film material (pure MoS2The electron carrier density of thin-film material, electronics are moved Shifting rate and resistivity value are respectively 2.1 × 1017cm-3、0.1cm2V-1s-1) compare, 5 orders of magnitude and 1 are at least improve respectively The order of magnitude.
Particularly, using the MoS obtained by above-mentioned technical proposal2/Ag/MoS2Thin-film material, resistivity value reaches 5.7 × 10-2Ω cm, than single MoS2The resistivity value (1.1 × 10 of thin-film material3Ω cm) at least low 4 orders of magnitude.
Generally, the present invention is by by single MoS2Thin layer changes into " sandwich of layers " version：Using upper Lower two-layer MoS2One layer of Ag thin metal layers this simple technological means are inserted between thin layer, inserted Ag is dexterously utilized Free electron in thin metal layer is to MoS2The electron injection effect of thin layer, improves the electron carrier density in thin-film material And electron mobility, reach and significantly reduce MoS2The resistivity value of thin-film material, raising MoS2The mesh of the electric conductivity of thin-film material 's.
To more fully understand above-mentioned technical proposal, now it is described in detail from principle：
1st, Ag metal intercalations are to MoS2The technique effect that thin-film material performance reaches has three aspects：
(1) a large amount of free electrons in Ag metal intercalations respectively enter top layer MoS by injection effect2Thin layer and bottom MoS2Thin layer, has been respectively increased upper and lower MoS2Electron carrier density and electron mobility in thin layer；
(2) by improving upper and lower two-layer MoS2Electron concentration and electron mobility in thin-film material, significantly reduces MoS2 The resistivity of thin-film material, significantly enhances MoS2The electric conductivity of thin-film material；
(3) continuity Characteristics of Ag metal intercalations, effectively enhance the stability of membrane structure in the middle of, reduce in thin film Portion's defects count, so that the stability and repeatability of thin-film material performance are improved.
2nd, in above-mentioned technical proposal, the electronic work function of Ag metal levels is 4.2eV, less than MoS2The work function of thin-film material Value 4.5eV, so as to ensure that electronics can be injected into MoS by Ag metal levels2Thin layer；
3rd, in above-mentioned technical proposal, Ag metal levels are located at two-layer MoS2Between material, beneficial to electronics by injection effect point Jin Ru not upper and lower two-layer MoS2Thin layer, improves the uniformity of whole thin-film material inside Carrier Profile；
4th, in above-mentioned technical proposal, the thickness ultrathin of Ag metal levels is 3-10nm, on the one hand improves the equal of Ag metal levels Even seriality；On the other hand also avoid thin film internal electron only with Ag metal levels as transfer passages, and without MoS2Thin layer； Meanwhile, Ag metal levels can be upper and lower two-layer MoS2Thin film provides a large amount of free electrons.
It is demonstrated experimentally that the MoS of above-mentioned technical proposal2/Ag/MoS2Thin-film material, with electron concentration height, electron mobility Greatly, resistivity value is little, structure and steady performance.
Preferably, the bottom MoS2Thin layer is deposited on the Si upper surfaces using DC magnetron sputtering method 's；
The Ag metal levels are to be deposited on the MoS using DC magnetron sputtering method2On thin layer；
The top layer MoS2Thin layer is deposited on the Ag metal levels using DC magnetron sputtering method.
What the optimal technical scheme was directly brought has the technical effect that, preparation method is simple, technical process is easily controllable, product Quality stability is more preferable with concordance.
The second object of the present invention is to provide a kind of above-mentioned MoS2/Ag/MoS2The preparation method of semiconductor film material, Its preparation process is simple, process are easily-controllable, high yield rate, and environmental friendly, are suitable to industrialized production.
The technical scheme that adopted for achieving the above object of the present invention is, a kind of above-mentioned MoS2/Ag/MoS2Thin-film material Preparation method, it is characterised in that comprise the following steps：
The first step, silicon substrate surface cleaning step
The non-conductive type Si monocrystal chip of intrinsic insulation is chosen, is cleaned by ultrasonic in ethanol, acetone and deionized water successively 180s；
Take out and dried up with drying nitrogen；
Second step, bottom MoS2Thin-film surface deposition step
Si monocrystal chips substrate after cleaning is loaded pallet, is put into vacuum chamber, and vacuum chamber is taken out as fine vacuum, in argon Under compression ring border, the temperature of Si monocrystal chips is adjusted to into the first temperature, ar pressure is adjusted to first pressure, using magnetically controlled DC sputtering Technology, under the conditions of constant 30W sputtering powers, using the ion bom bardment MoS for ionizing out2Ceramic target, in the Si substrates Upper surface on, deposit one layer of MoS2Thin layer；
3rd step, Ag layer on surface of metal deposition steps
Will be equipped with the surface of the pallet-changing of sample to Ag metal targets；
The temperature of Si monocrystal chips is adjusted to into second temperature, Ar air pressure is adjusted to second pressure, using magnetically controlled DC sputtering skill Art, under the conditions of constant 30W sputtering powers, using the ion bom bardment Ag metal targets for ionizing out, in above-mentioned bottom MoS2It is thin On the surface of film layer, redeposited one layer of Ag metal level；
4th step, top layer MoS2Thin-film surface deposition step
The pallet that will be equipped with sample is changed again to MoS2The surface of ceramic target；
The temperature of Si monocrystal chips is adjusted to into the 3rd temperature, Ar air pressure is adjusted to the 3rd pressure, using magnetically controlled DC sputtering skill Art, under the conditions of constant 30W sputtering powers, using the ion bom bardment MoS for ionizing out2Ceramic target, in above-mentioned Ag metal levels Surface on, one layer of MoS of redeposition2Thin layer, obtains final product.
What above-mentioned technical proposal was directly brought has the technical effect that, preparation process is simple, high yield rate are suitable to industrial metaplasia Produce, and above-mentioned preparation method is used without poisonous and harmful raw material, produced or waste gas discharge without poisonous and harmful waste, whole technique stream It is journey environmental protection, pollution-free；
Uniform in quality obtained by above-mentioned technical proposal is stable, each thin layer adhesion-tight, thickness are uniform and stable and It is easily controllable.
Preferably, the purity of above-mentioned argon is more than 99.999%；The high pure nitrogen refers to that purity is more than 99.95% Drying nitrogen；The MoS2Ceramic target, its purity is 99.9%；The Ag metal targets, its purity is 99.99%；Institute State MoS2The target-substrate distance of the target-substrate distance of target and the Ag targets is 50mm.
What the optimal technical scheme was directly brought has the technical effect that, the distance can meet ion in motor process with work Make gas and fully collide reduction kinetic energy, can guarantee that ion has enough adhesive force in film forming procedure again.
Further preferably, above-mentioned first temperature is 20-400 DEG C, and the first pressure is 1-10Pa；
The second temperature is 20-30 DEG C, and the second pressure is 1-5Pa；
3rd temperature is 20-400 DEG C, and the 3rd pressure is 1-10Pa.
What the optimal technical scheme was directly brought has the technical effect that, both can guarantee that and has obtained good molybdenum disulfide film and silver The crystal mass of metallic diaphragm, can meet needed for ion film forming procedure, enough adhesive force again, while can also be easier Control film forming thickness.
In sum, the present invention has the advantages that relative to prior art：
1st, MoS of the invention2/Ag/MoS2Semiconductor film material has very significant low-resistivity (in room temperature condition Under, electron carrier density, electron mobility and resistivity value are respectively 8.3 × 1022cm-3、8.5cm2V-1s-1With 5.7 × 10-2 Ωcm.With single pure MoS2Thin-film material compares, and carrier concentration at least improves 5 orders of magnitude, and electron mobility is at least 1 order of magnitude is improve, and resistivity value at least reduces 4 orders of magnitude).
2nd, MoS of the invention2/Ag/MoS2The preparation method of semiconductor film material has process is simple, state modulator letter Just；And its high yield rate, low cost of manufacture, product quality Stability and dependability are good, are suitable to industrialized production.
Description of the drawings
Fig. 1 is the MoS of the present invention2/Ag/MoS2The structural representation of semiconductor film material；
Fig. 2 is the MoS obtained by embodiment 12/Ag/MoS2The Raman spectrogram of semiconductor film material；
Fig. 3 is the MoS of the present invention2/Ag/MoS2The electron carrier density of semiconductor film material and mobility value are distinguished With the variation rule curve figure of Ag layer thickness variations；
Fig. 4 is the MoS of the present invention2/Ag/MoS2The resistivity value of semiconductor film material with Ag layer thickness variations change Law curve figure.
Specific embodiment
With reference to embodiment and accompanying drawing, the present invention is described in detail.
Embodiment 1
Preparation method is as follows：
The first step, silicon substrate surface cleaning step
The non-conductive type Si monocrystal chip of intrinsic insulation is chosen, is cleaned by ultrasonic in ethanol, acetone and deionized water successively 180s；
Take out and dried up with drying nitrogen；
Second step, bottom MoS2Thin-film surface deposition step
Si monocrystal chips substrate after cleaning is loaded pallet, is put into vacuum chamber, and vacuum chamber is taken out as fine vacuum, in argon Under compression ring border, the temperature of Si monocrystal chips is adjusted to into 200 DEG C of the first temperature, ar pressure is adjusted to first pressure 3Pa, using direct current Magnetron sputtering technique, under the conditions of constant 30W sputtering powers, using the ion bom bardment MoS for ionizing out2Ceramic target, in institute State on the upper surface of Si substrates, deposit MoS of a layer thickness for 50nm2Thin layer；
3rd step, Ag layer on surface of metal deposition steps
Will be equipped with the surface of the pallet-changing of sample to Ag metal targets；
The temperature of Si monocrystal chips is adjusted to into second temperature 20-25 DEG C, Ar air pressure is adjusted to second pressure 5Pa, using direct current Magnetron sputtering technique, under the conditions of constant 30W sputtering powers, using the ion bom bardment Ag metal targets for ionizing out, above-mentioned Bottom MoS2On the surface of thin layer, redeposited a layer thickness is the Ag metal levels of 10nm；
4th step, top layer MoS2Thin-film surface deposition step
The pallet that will be equipped with sample is changed again to MoS2The surface of ceramic target；
The temperature of Si monocrystal chips is adjusted to into 200 DEG C of the 3rd temperature, Ar air pressure is adjusted to the 3rd pressure 3Pa, using DC magnetic Control sputtering technology, under the conditions of constant 30W sputtering powers, using the ion bom bardment MoS for ionizing out2Ceramic target, above-mentioned On the surface of Ag metal levels, redeposited a layer thickness is the MoS of 50nm2Thin layer, obtains final product.
Properties of product testing result：
After testing, under the conditions of room temperature (20-25 DEG C), obtained MoS2/Ag/MoS2The electronics of semiconductor film material Carrier concentration, electron mobility and resistivity value are respectively 8.3 × 1022cm-3、8.5cm2V-1s-1With 5.7 × 10-2Ωcm。
Explanation：Pure MoS2The electron carrier density of thin-film material, electron mobility and resistivity value be respectively 2.1 × 1017cm-3、0.1cm2V-1s-1With 1.1 × 103Ω cm are (referring to comparative example：The testing result of embodiment 2).
Embodiment 2
Explanation：The embodiment is comparative example, and target product is pure MoS2Thin-film material, without middle Ag intercalations.
Preparation method is as follows：
The first step, silicon substrate surface cleaning step
The non-conductive type Si monocrystal chip of intrinsic insulation is chosen, is cleaned by ultrasonic in ethanol, acetone and deionized water successively 180s；
Take out and dried up with drying nitrogen；
Second step, bottom MoS2Thin-film surface deposition step
Si monocrystal chips substrate after cleaning is loaded pallet, is put into vacuum chamber, and vacuum chamber is taken out as fine vacuum, in argon Under compression ring border, the temperature of Si monocrystal chips is adjusted to into 200 DEG C of the first temperature, ar pressure is adjusted to first pressure 3Pa, using direct current Magnetron sputtering technique, under the conditions of constant 30W sputtering powers, using the ion bom bardment MoS for ionizing out2Ceramic target, in institute State on the upper surface of Si substrates, deposit MoS of a layer thickness for 100nm2Thin layer；Obtain final product.
Properties of product testing result：
After testing, under the conditions of room temperature (20-25 DEG C), obtained MoS2The electron carrier density of thin-film material, electricity Transport factor and resistivity value are respectively 2.1 × 1017cm-3、0.1cm2V-1s-1With 1.1 × 103Ωcm。
Embodiment 3
Only in the third step, by adjusting sputtering time, intercalation thickness in the middle of Ag is adjusted to into 3nm；Remaining, with enforcement Example 1.
Properties of product testing result：
After testing, under the conditions of room temperature (20-25 DEG C), obtained MoS2/Ag/MoS2The electronic carrier of thin-film material Concentration, electron mobility and resistivity value are respectively 1.8 × 1020cm-3、1.2cm2V-1s-1With 9.8 Ω cm.
Embodiment 4
Only in the third step, by adjusting sputtering time, intercalation thickness in the middle of Ag is adjusted to into 8nm；Remaining, with enforcement Example 1.
Properties of product testing result：
After testing, under the conditions of room temperature (20-25 DEG C), obtained MoS2/Ag/MoS2The electronics of semiconductor film material Carrier concentration, electron mobility and resistivity value are respectively 8.8 × 1021cm-3、2.3cm2V-1s-1With 1.1 Ω cm.
Embodiment 5
Only in the third step, by adjusting sputtering time, intercalation thickness in the middle of Ag is adjusted to into 10nm；Remaining, with real Apply example 1.
Properties of product testing result：
After testing, under the conditions of room temperature (20-25 DEG C), obtained MoS2/Ag/MoS2The electronics of semiconductor film material Carrier concentration, electron mobility and resistivity value are respectively 6.0 × 1022cm-3、5.7cm2V-1s-1With 0.12 Ω cm.
To more fully understand the technical characterstic of the present invention, below in conjunction with the accompanying drawings, the performance to the product obtained by the present invention Detection method and testing result are described in detail.
Fig. 1 is the MoS of the present invention2/Ag/MoS2The structural representation of semiconductor film material.
As shown in figure 1, the MoS of the present invention2/Ag/MoS2Semiconductor film material, it is layer structure, from top to bottom successively Including top layer MoS2Thin layer, Ag metal levels, bottom MoS2Thin layer and Si substrates；Wherein：
Above-mentioned Si substrates are the non-conductive monocrystal materials of intrinsic insulation, and single-sided polishing, burnishing surface is upper surface；
Above-mentioned MoS2Thin layer, its purity is 99.9%；
Above-mentioned Ag metal levels, its purity is 99.99%；
Above-mentioned top layer MoS2Thin layer, Ag metal levels, bottom MoS2The thickness of thin layer be respectively 50nm, 3-10nm and 50nm；
Above-mentioned bottom MoS2Thin layer is deposited on above-mentioned Si upper surfaces using DC magnetron sputtering method；
Above-mentioned Ag metal levels are to be deposited on above-mentioned MoS using DC magnetron sputtering method2On thin layer；
Above-mentioned top layer MoS2Thin layer is deposited on above-mentioned Ag metal levels using DC magnetron sputtering method.
Fig. 2 is the MoS obtained by embodiment 12/Ag/MoS2The Raman spectrum analyses figure of semiconductor film material.
As shown in Fig. 2 382cm-1And 407cm-1Respectively MoS2The typical in plane vibration pattern (E of thin film1 2g) shake outside dough-making powder Dynamic model formula (A1g).Show that obtained film material is MoS2。
Fig. 3 is the MoS of the present invention2/Ag/MoS2The electron carrier density and mobility value of semiconductor film material is with Ag The variation rule curve figure of layer thickness variation.
From figure 3, it can be seen that with the increase of intercalation thickness in the middle of Ag, MoS2/Ag/MoS2The electronics of thin-film material is carried Flow sub- concentration and mobility value gradually increases.It can be seen that, as the uniform continuity of intercalation in the middle of the increase of thickness, Ag strengthens, it is To MoS inside Ag layers2Injected electrons number and effect strengthen in thin film, so as to cause the carrier concentration and electricity of whole thin film Transport factor is significantly improved.
Fig. 4 is the MoS of the present invention2/Ag/MoS2The resistivity value of semiconductor film material with Ag layer thickness variations change Law curve figure.
As shown in figure 4, the pure MoS without Ag metal intercalations (when the thickness corresponded in figure is 0)2The electronics of thin-film material is carried Flow sub- concentration, electron mobility and resistivity value and be respectively 2.1 × 1017cm-3、0.1cm2V-1s-1With 1.1 × 103Ωcm。
Figure 4, it is seen that with the increase of intercalation thickness in the middle of Ag, MoS2/Ag/MoS2The resistivity of thin-film material Value is gradually reduced.
Under the conditions of room temperature (20-25 DEG C), the obtained MoS with 10nm Ag metal intercalations2/Ag/MoS2Quasiconductor The electron carrier density of thin-film material, electron mobility and resistivity value are respectively 8.3 × 1022cm-3、8.5cm2V-1s-1With 5.7×10-2Ωcm。
Data Comparison can be seen that carrier concentration increase rate more than 5 orders of magnitude, and electron mobility increase rate surpasses 1 order of magnitude is crossed, and resistivity value reduces amplitude more than 4 orders of magnitude, electric conductivity improvement amplitude is huge, effect is very aobvious Write.

Claims (5)

1. a kind of MoS2/Ag/MoS2Semiconductor film material, it is characterised in that for layer structure, top is from top to bottom included successively Layer MoS2Thin layer, Ag metal levels, bottom MoS2Thin layer and Si substrates；Wherein：
The Si substrates are the non-conductive monocrystal materials of intrinsic insulation, and single-sided polishing, burnishing surface is upper surface；
The MoS2Thin layer, its purity is 99.9%；
The Ag metal levels, its purity is 99.99%；
The top layer MoS2Thin layer, Ag metal levels, bottom MoS2The thickness of thin layer is respectively 50nm, 3-10nm and 50nm.
2. MoS according to claim 12/Ag/MoS2Semiconductor film material, it is characterised in that the bottom MoS2It is thin Film layer is deposited on the Si upper surfaces using DC magnetron sputtering method；
The Ag metal levels are to be deposited on the MoS using DC magnetron sputtering method2On thin layer；
The top layer MoS2Thin layer is deposited on the Ag metal levels using DC magnetron sputtering method.
3. a kind of MoS as claimed in claim 12/Ag/MoS2The preparation method of semiconductor film material, it is characterised in that bag Include following steps：
The first step, silicon substrate surface cleaning step
The non-conductive type Si monocrystal chip of intrinsic insulation is chosen, is cleaned by ultrasonic 180s in ethanol, acetone and deionized water successively；
Take out and dried up with drying nitrogen；
Second step, bottom MoS2Thin-film surface deposition step
Si monocrystal chips substrate after cleaning is loaded pallet, is put into vacuum chamber, and vacuum chamber is taken out as fine vacuum, in argon ring Under border, the temperature of Si monocrystal chips is adjusted to into the first temperature, ar pressure is adjusted to first pressure, using magnetically controlled DC sputtering skill Art, under the conditions of constant 30W sputtering powers, using the ion bom bardment MoS for ionizing out2Ceramic target, in the Si substrates On upper surface, one layer of MoS is deposited2Thin layer；
3rd step, Ag layer on surface of metal deposition steps
Will be equipped with the surface of the pallet-changing of sample to Ag metal targets；
The temperature of Si monocrystal chips is adjusted to into second temperature, Ar air pressure is adjusted to second pressure, using magnetically controlled DC sputtering technology, Under the conditions of constant 30W sputtering powers, using the ion bom bardment Ag metal targets for ionizing out, in above-mentioned bottom MoS2Thin layer On surface, redeposited one layer of Ag metal level；
4th step, top layer MoS2Thin-film surface deposition step
The pallet that will be equipped with sample is changed again to MoS2The surface of ceramic target；
The temperature of Si monocrystal chips is adjusted to into the 3rd temperature, Ar air pressure is adjusted to the 3rd pressure, using magnetically controlled DC sputtering technology, Under the conditions of constant 30W sputtering powers, using the ion bom bardment MoS for ionizing out2Ceramic target, on the surface of above-mentioned Ag metal levels On, one layer of MoS of redeposition2Thin layer, obtains final product.
4. MoS according to claim 32/Ag/MoS2The preparation method of semiconductor film material, it is characterised in that described The purity of argon is more than 99.999%；
The high pure nitrogen refers to the drying nitrogen that purity is more than 99.95%；
The MoS2Ceramic target, its purity is 99.9%；
The Ag metal targets, its purity is 99.99%；
The MoS2The target-substrate distance of the target-substrate distance of target and the Ag targets is 50mm.
5. MoS according to claim 32/Ag/MoS2The preparation method of semiconductor film material, it is characterised in that described First temperature is 20-400 DEG C, and the first pressure is 1-10Pa；
The second temperature is 20-30 DEG C, and the second pressure is 1-5Pa；
3rd temperature is 20-400 DEG C, and the 3rd pressure is 1-10Pa.
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