CN106560921A - Arrangement Structure Of Semiconductor Element In Semiconductor Module And Corresponding Method - Google Patents

Arrangement Structure Of Semiconductor Element In Semiconductor Module And Corresponding Method Download PDF

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Publication number
CN106560921A
CN106560921A CN201610810415.4A CN201610810415A CN106560921A CN 106560921 A CN106560921 A CN 106560921A CN 201610810415 A CN201610810415 A CN 201610810415A CN 106560921 A CN106560921 A CN 106560921A
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China
Prior art keywords
semiconductor element
electrode
semiconductor
connection end
module
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CN201610810415.4A
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Chinese (zh)
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A·阿佩斯迈尔
J·阿萨姆
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Audi AG
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Audi AG
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Publication of CN106560921A publication Critical patent/CN106560921A/en
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]

Abstract

The present invention relates to a semiconductor module comprising at least one first semiconductor element having a first side with a first electrode and a second side with a second electrode; at least one second semiconductor element having the first side with the first electrode and the second side with the second electrode, wherein the first semiconductor element 12 is arranged on the second semiconductor element 14, and a conductive connection structure 21 is arranged between the first and second semiconductor elements; the second electrode of the first semiconductor element is connected with the conductive connection structure mechanically and electrically, and the first electrode of the second semiconductor element is connected with the conductive connection structure mechanically and electrically. The present invention also relates to a power module composed of a plurality of semiconductor modules, a method for arranging the semiconductor elements on the semiconductor module and a method used for arranging the semiconductor module to provide the power module.

Description

Arrangement and correlation method of the semiconductor element on semiconductor module
Technical field
In general, the present invention relates to a kind of for realizing applying the electrical semiconductor component of power model in vehicle Arrangement and more particularly to a kind of half-bridge module with semiconductor element stacked structure.
Background technology
Semi-conductor power module is used in various electronic in modern vehicle.For example it is used for semiconductor power module in 12 In volt onboard power system, the onboard power system is powered to transfer or transmission control device.In addition in hybrid electric vehicle Semi-conductor power module is applied in hauling-eye inverter or in DC converter.
Semi-conductor power module is substantially made up of multiple thyristors, such as such as MOSFET (metal oxides Semiconductor field effect transistor) or IGBT (insulated gate bipolar transistor), one semiconductor diode inverse parallel ground of difference is made These thyristors are connected to for so-called unloaded diode.The structure of such semi-conductor power module is typically flat Face, so as to thyristor and semiconductor diode be set up in parallel and on side it is mutual via conduction connecting structure Connection.
Power model is formed using the three-phase being made up of three half-bridges, and this three-phase has respectively so-called high-end switch and institute The low-end switch of meaning.As has been said, switch generally by thyristor and therewith inverse parallel connect semiconductor two Pole pipe is constituted.
The horizontal layout of element causes very big space requirement.In addition the power model of such plane is in its installation It is quite inflexible, thus the structure of such as inverter and design are limited.Additionally, electric current is switched by advanced semiconductor Element (that is, MOSFET or IGBT) arrives low side diode (or on the contrary by low side semiconductor switches element to high-end diode) Commutation produce electromagnetic field, the electromagnetic field fatefully determines the Electro Magnetic Compatibility of whole device and elsewhere must be using suitable The filter and other measures of conjunction reduces the electromagnetic field.
A kind of electronic building brick disclosed in the A1 of document DE 10 2,006 050 291, the component is opened including semiconductor power Close and semiconductor diode.Include that the output being assembled on the chip field of carrier strip is touched in the downside of this semiconductor power switch Point, and the upside of semiconductor power switch includes control contact and input contact.The anode contact of semiconductor diode is arranged on On the input contact of semiconductor power switch and it is electrically connected.The cathode contact of diode is defeated with power semiconductor switch Go out contact portion.
The A1 of document DE 10 2,006 008 632 disclose a kind of power semiconductor component, and the power semiconductor component includes Planar conductor frame, at least one vertical power semiconductor structure element and at least another electronic component.Vertical power is partly led Body structural detail has the first side and the second side.At least one first contact surfaces and at least one control contact surface are arranged on first On side, and the second contact surface is arranged on the second side.At least another electronic component is arranged on vertical power semiconductor On second contact surface of constitutive element part.
The content of the invention
By contrast, the present invention proposes a kind of semiconductor module, and the semiconductor module has：At least one first semiconductors Element, first semiconductor element has includes the first side of at least one first electrode and including at least one second electrode Second side；And at least one second semiconductor elements, second semiconductor element has includes at least one first electrode First side and the second side including at least one second electrode, wherein, the first semiconductor element is arranged in the second semiconductor element On and between the first semiconductor element and the second semiconductor element be provided with conduction connecting structure, wherein, the first half lead At least one second electrode of volume elements part is connected with conduction connecting structure in the way of mechanically and electrically, and the second half At least one first electrode of conductor element is connected with conduction connecting structure in the way of mechanically and electrically.
In a form of implementation, there is the 3rd semiconductor element and the 4th semiconductor element according to the semiconductor module of the present invention Part, wherein, in the first section the first semiconductor element is allocated to first switch side and is spatially arranged be allocated to On second semiconductor element of two switch-sides, and by the 3rd semiconductor element in the second section separated with the first section It is allocated to second switch side and is arranged on the 4th semiconductor element for being allocated to first switch side, wherein, lead the 4th half Second electrode on second side of volume elements part is conductively connected with the first electrode of the first semiconductor element, the second semiconductor element Second electrode is conductively connected with the first electrode on the first side of the 3rd semiconductor element, wherein, the first connection end and the 4th The second electrode electrical connection of semiconductor element, and the second connection end is electrically connected with the second electrode of the second semiconductor element, Conduction connecting structure by the first electrode of the second electrode of the first semiconductor element and the second semiconductor element with lead the 3rd half Second electrode on second side of volume elements part and the first electrode electrical connection on the first side of the 4th semiconductor element, its In, the 3rd connection end of semiconductor module is disposed with conduction connecting structure.
In a form of implementation, there is the 3rd semiconductor element and the 4th semiconductor element according to the semiconductor module of the present invention Part, wherein, in the first section the first semiconductor element is allocated to first switch side and is spatially arranged be allocated to On second semiconductor element of two switch-sides, and by the 3rd semiconductor element in the second section separated with the first section It is allocated to second switch side and is arranged under the 4th semiconductor element for being allocated to first switch side, wherein, lead the 4th half Second electrode on second side of volume elements part is conductively connected with the first electrode of the first semiconductor element, the second semiconductor element Second electrode is conductively connected with the first electrode on the first side of the 3rd semiconductor element, wherein, the first connection end and the 4th The second electrode electrical connection of semiconductor element, and the second connection end is electrically connected with the second electrode of the second semiconductor element, Conduction connecting structure by the first electrode of the second electrode of the first semiconductor element and the second semiconductor element with lead the 3rd half Second electrode on second side of volume elements part and the first electrode electrical connection on the first side of the 4th semiconductor element, its In, the 3rd connection end of semiconductor module is disposed with conduction connecting structure.
In a form of implementation of the semiconductor module according to the present invention, first, second, third, fourth semiconductor element First, second electrode be connected in the way of mechanically and electrically via articulamentum with corresponding conduction connecting structure.
In another form of implementation of the semiconductor module according to the present invention, at least one semiconductor element is electric with the 3rd Pole, the 3rd electrode is arranged on the edge of at least one semiconductor element.
In a form of implementation of the semiconductor module according to the present invention, the first and/or second semiconductor element is via even Connect layer to be connected in the way of mechanically and electrically with basal layer (or referred to as basalis).
According to the present invention semiconductor module another form of implementation in, the 3rd and/or the 4th semiconductor element via Articulamentum is connected with another basal layer in the way of mechanically and electrically.
In the another form of implementation of the semiconductor module according to the present invention, the second electrode of the second semiconductor element and the The electrical connection of the first electrode of three semiconductor elements is realized via basal layer.
In a form of implementation of the semiconductor module according to the present invention, the first connection end is arranged on the base in the second section On plinth layer, and the second connection end is arranged on the basal layer in the first section.
In another form of implementation of the semiconductor module according to the present invention, corresponding basal layer is arranged on nonconducting isolation On layer.
In the another form of implementation of the semiconductor module according to the present invention, separation layer is connected with cooling device.
Additionally, the present invention also proposes a kind of power model, wherein, three bases are according to the one of the semiconductor module of the present invention Plant the semiconductor module described in form of implementation to arrange side by side or stackedly arrange up and down, wherein, the first connection end and second connects Connect end to be connected in each in three semiconductor modules.
A kind of method for arranging semiconductor element on semiconductor module is additionally proposed, wherein, by least one First semiconductor element is arranged at least one second semiconductor elements, and the first semiconductor element includes thering is at least one First side of first electrode and the second side with least one second electrode, the second semiconductor element includes thering is at least one First side of first electrode and the second side with least one second electrode, wherein, in described at least one first semiconductors Conduction connecting structure is arranged between element and at least one second semiconductor element, wherein, by the first semiconductor element At least one second electrode is connected with conduction connecting structure in the way of mechanically and electrically, by the second semiconductor element At least one first electrode is connected with conduction connecting structure in the way of mechanically and electrically.
In the form of implementation according to the method for the present invention, by described at least one first semiconductors in the first section Element is allocated to first switch side and described at least one second semiconductor elements is allocated to into second switch side, and with The 3rd semiconductor element for being allocated to second switch side is arranged in the second section that one section is separated is allocated to first and opened Close on the 4th semiconductor element of side, wherein, the second electrode on the second side of the 4th semiconductor element is led with the first half The first electrode of volume elements part is conductively connected, by the second electrode of the second semiconductor element and the first side in the 3rd semiconductor element On first electrode be conductively connected, wherein, the second electrode of the first connection end and the 4th semiconductor element is electrically connected, by the The second electrode of two connection ends and the second semiconductor element is electrically connected, and makes conduction connecting structure by the of the first semiconductor element The first electrode of two electrodes and the second semiconductor element is with the second electrode on the second side of the 3rd semiconductor element and the First electrode electrical connection on first side of four semiconductor elements, wherein, semiconductor module is arranged on conduction connecting structure The 3rd connection end.
In the form of implementation according to the method for the present invention, in the first section, described at least one the first half are led Volume elements part is allocated to first switch side and described at least one second semiconductor elements is allocated to into second switch end, and with In the second section that one section is separated, the 3rd semiconductor element for being allocated to second switch side is arranged in and is allocated to first and is opened Close under the 4th semiconductor element of side, wherein, make second electrode on the second side of the 4th semiconductor element and the first half The first electrode of conductor element is conductively connected, and makes the second electrode of the second semiconductor element and the first of the 3rd semiconductor element First electrode on side is conductively connected, wherein, the first connection end is electrically connected with the second electrode of the 4th semiconductor element, make Second connection end is electrically connected with the second electrode of the second semiconductor element, makes conduction connecting structure by the first semiconductor element The first electrode of second electrode and the second semiconductor element with the second side of the 3rd semiconductor element second electrode and First electrode electrical connection on first side of the 4th semiconductor element, wherein, semiconductor module is set on conduction connecting structure 3rd connection end of block.
In another form of implementation according to the method for the present invention, first, second, third and fourth semiconductor element is made First, second electrode is connected via articulamentum with corresponding conduction connecting structure in the way of mechanically and electrically.
In the another form of implementation according to the method for the present invention, there is the 3rd electrode on edge using at least one Semiconductor element.
In the form of implementation according to the method for the present invention, the first and/or second semiconductor element is made via articulamentum It is connected in the way of mechanically and electrically with basal layer.
In another form of implementation according to the method for the present invention, the 3rd and/or the 4th semiconductor element is made via connection Layer is connected with another basal layer in the way of mechanically and electrically.
In another form of implementation according to the method for the present invention, the first connection end is arranged on into the basis in the second section On layer, and the second connection end is arranged on the basal layer in the first section.
In the another form of implementation according to the method for the present invention, basal layer is arranged on nonconducting separation layer.
In the form of implementation according to the method for the present invention, separation layer is set to be connected with cooling device.
A kind of method for providing power model is additionally proposed, in the method, three bases is made according to the present invention Semiconductor module a kind of form of implementation described in semiconductor module arrange side by side or stackedly arrange up and down, by first connect Connect on the first switch side that end is connected in each in three semiconductor modules, and the second connection end is connected to into three and half On second switch side in each in conductor module, so that three semiconductor modules are connected in parallel.
Additional advantages of the present invention and design are produced by specification and drawings.
It is self-evident, it is above-mentioned and it is following can not only also be with being applied in combination for being proposed, Er Qieneng by the feature for illustrating With other combinations or exclusive use, without deviating from the scope of the present invention.
Description of the drawings
The present invention is schematically illustrated and is described in detail with reference to the drawings by the form of implementation in accompanying drawing.
Fig. 1 illustrates the schematic circuit diagram of the power model of prior art；
Fig. 2 illustrates half of a form of implementation according to the semiconductor module according to the present invention with double-sided cooled device The arrangement of conductor element；
Fig. 3 a illustrate the schematic equivalent circuit diagram of the half-bridge of power model；
Fig. 3 b are illustrated according to another reality for being used for the semiconductor module according to the present invention for realizing the equivalent circuit diagram of Fig. 3 a Apply the arrangement of the semiconductor element of form；
Fig. 4 illustrates another arrangement of the semiconductor element of another form of implementation according to the semiconductor module according to the present invention Structure.
Specific embodiment
As Fig. 1 is apparent, power model (during it is for example for vehicle) is substantially made up of multiple electric switches.It is right Six switches are needed in three phase power module, they are represented in FIG with S1 to S6.Respectively represented with U, V and W.Each switch S1 to S6 has each thyristor 101 to 106, such as such as MOSFET or IGBT.Thyristor 101 to Each in 106 also has three contacts connection end in other words, and these contacts are for example with CS, GS and ES plus corresponding to switch Index number representing.Here, such as contact CS represents the collector driving point of IGBT, contact GS represents gate contact, and touches Point ES represents emitter contact.Respectively inverse parallel is connected with an each semiconductor two pole with each thyristor S1 to S6 Pipe D1 to D6.Switch S1, S3 and S5 are connected respectively on colelctor electrode side with the first connection end HV+.Switch S2, S4 and S6 exist respectively It is connected with the second connection end HV- in emitter side.Each two switchs to form each so-called half-bridge.First half-bridge is by switch S1 and S2 are formed, and the second half-bridge is formed by switching S3 and S4, and the 3rd half-bridge is formed by switching S5 and S6.In respective switch Between be respectively arranged with the 3rd connection end, the 3rd connection end is namely for phase U, V, the connection end of W.
It is further described with reference to the accompanying drawings according to the method for the present invention and the equipment according to the present invention.
Fig. 2 illustrate the stacked arrangement structure with semiconductor element according to the present invention semiconductor module 10 " first Form of implementation.First semiconductor element 12 is vertical semiconductor elements.Vertical semiconductor elements are on the side of semiconductor element There is on another side at least one other electrode with least one electrode, wherein, an electrode is configured to anode and touches Point, and corresponding another electrode is configured to cathode contact.Semiconductor element 12 have with first electrode 12.1 the first side ( This is the upside of semiconductor element 12) and the second side with second electrode 12.2 (under here semiconductor element 12 Side).Which electrode 12.1,12.2 has anode contact and which electrode 12.1,12.2 has cathode contact, and this depends on partly leading The wiring of the application and wiring of module 10 " semiconductor element in other words.
Second semiconductor element 14 equally has the first side with first electrode 14.1, and (here is semiconductor element 14 Upside) and the second side (here is the downside of semiconductor element 14) with second electrode 14.2, wherein, side has conduct The electrode of anode contact, and corresponding opposite side has the electrode as cathode contact.In the first semiconductor element 12 and second Conduction connecting structure 21 is provided between semiconductor element 14.The second electrode 12.2 of the first semiconductor element is via articulamentum 25 Mechanically and electrically it is connected with conduction connecting structure 21.The first electrode 14.1 of the second semiconductor element 14 is via articulamentum 26 It is connected with conduction connecting structure 21.Therefore, the second electrode 12.2 of the first semiconductor element 12 also with the second semiconductor element 14 First electrode 14.1 be electrically connected.
In other words first electrode 12.1 is mechanical with basal layer 52 via articulamentum 24 for first side of the first semiconductor element 12 And electrical connection.Second side of the second semiconductor element 14 in other words second electrode 14.2 via articulamentum 27 and another basal layer 53 are mechanically and electrically.Semiconductor module 10 is disposed with basal layer 53 " the first connection end 37.First connection end 37 As provided the connection with positive source.Semiconductor module 10 is disposed with basal layer 52 " the second connection end 39.Second connection End 39 for example provides the connection with power cathode.Conduction connecting structure 21 makes the stacking of semiconductor element 12,14 be connected with the 3rd End 41 connects, and the 3rd connection end for example provides the connection with load phase.3rd connection end here can be arranged on another base On plinth layer 54.It is also contemplated that conduction connecting structure 21 is connected on basal layer 54.
Nonconducting separation layer 43 is connected with mutually discrete basal layer 53 and 54.Separation layer 43 for example can be by Alumina material or other suitable material compositions.Another basal layer 56 is connected with separation layer 43, another basal layer 56 It is arranged in cooling body 49 via articulamentum 47.
Separation layer 43 ' is connected with basal layer 52.Another basal layer 62 is connected with separation layer 43 ', another base Plinth layer 62 is via articulamentum 47 ' in the second cooling body 49 '.Separation layer 43, basal layer 56 and cooling body 49 form cooling Device 51, equally, separation layer 43 ', basal layer 62 and cooling body 49 ' form cooling device.However, every kind of other suitable are used for The cooling device for deriving heat is all contemplated that.
Can consider such as MOSFET, IGBT, diode, etc. as semiconductor element.But MOSFET, IGBT or its He has three contact portion ends by thyristor.For MOSFET this be respectively source electrode connection end, drain electrode connection end and Grid connection end.For IGBT, this is colelctor electrode connection end, emitter stage connection end and gate pole connection end.Here, semiconductor element 12nd, 14 side additionally has the 3rd electrode being not shown here, and the 3rd electrode forms the connection of grid connection end OR gate pole End.Source electrode-or emitter stage connection end and drain electrode-or colelctor electrode connection end by first, second electrode 12.1,12.2,14.1, 14.2 form.In one form, the semiconductor element 12,14 in Fig. 2 arranges with staggering, be achieved in for grid- The space of OR gate pole connection end.Electrical connection with grid-OR gate pole connection end for example can be by so-called pressure welding lead/key Close lead to realize.
Basal layer 52,53,54,56 and 62 is the conductive layer with the relatively good capacity of heat transmission.Suitable material can be Copper.But the every kind of other materials with the good capacity of heat transmission is also what is be contemplated that.The layer can also have certain structure The layer made.There is passage with certain layer for constructing, passage is formed by layer fluting --- such as by milling ---, thus, institute Stating construction and can be divided into zones of different or conductor road/printed conductor can be worked in the construction, and its method is：It is only special Fixed region is slotted.
Articulamentum 24,25,26 and 27 and 47 and 47 ' is for carrying out machinery between corresponding component or semiconductor element With the layer of electrical connection.Such articulamentum can be the weld layer or sinter layer of for example suitable material, and its permission will connect Part between set up and be mechanically and electrically.
Conduction connecting structure 21 is the layer between the first semiconductor element 12 and the second semiconductor element 14 and can be with It is Copper Foil or silver foil.But it is also contemplated that every kind of other allow the material that is conductively connected.Such as basal layer 52,53,54,56 and 62 Such conductive layer is also admissible, for example to contact grid-OR gate pole connection end.
The equivalent circuit diagram of half-bridge illustrates that in fig. 3 a (it is at this to be capable of achieving semiconductor module of the present invention 10 according to Fig. 3 a In the case of be semiconductor half-bridge module) exemplary implementation wiring, the semiconductor half-bridge module illustrates in fig 3b simultaneously And further elucidate hereinafter with reference to the figure.It is apparent by Fig. 3 a to be, according to the semiconductor half-bridge module 10 of the present invention Substantially it is made up of two electric current branch A being connected in parallel and B, wherein each electric current branch A, B is two semiconductor elements Series circuit.In the form of implementation for illustrating, a thyristor 14,18 and respectively a semiconductor diode respectively 12nd, 16 it is connected in series.Looked thyristor 18 and semiconductor diode by high potential to electronegative potential in electric current branch A 16 are connected in series.Looked semiconductor diode 12 and thyristor 14 by high potential to electronegative potential in electric current branch B It is connected in series.S1 is switched by known to Fig. 1 and S2 or S3, S4 or S5, S6 therefore cleave into Liang Ge electric currents branch A, B.Illustrating Form of implementation in, thyristor 14,18 is IGBT.Via conduction connecting structure 20, thyristor 18 (here is the colelctor electrode connection end CS of IGBT for second side or second electrode 18.21) with the first side of semiconductor diode 12 or the One electrode 12.1 (it is cathode contact) is connected.Via conduction connecting structure 21, the first side of thyristor 18 or (here is the emitter stage connection end ES of IGBT to first electrode 18.11) with the second side of semiconductor diode 12 or second electrode 12.2 (it is anode contact) are electrically connected, thus thyristor 18 (IGBT) and the inverse parallel of semiconductor diode 12 ground Connection.The conduction connecting structure is also by the second side of semiconductor diode 16 or second electrode 16.2 (it is cathode contact) and half (it is colelctor electrode connection end CS for first side of conductor switch element 14 (here is also IGBT) or first electrode 14.12) electrically connect Connect.Via conduction connecting structure 22, the first side of semiconductor diode 16 or first electrode 16.1 (it is anode contact) and half (it is emitter stage connection end ES for second side of conductor switch element 14 or second electrode 14.22) electrical connection, thus semiconductor Diode 16 is connected with the inverse parallel of thyristor 14 ground.Thyristor 14,18 additionally connects with the 3rd Connect end 14.3 or GS2With 18.3 or GS1, the 3rd connection end is in the form of implementation for illustrating corresponding to the gate contact of IGBT.Rope Draw numbering 1 and 2 and illustrate and switch-side is attached troops to a unit.Here, semiconductor diode 12 and thyristor 18 are associated with first Switch-side, and semiconductor diode 16 and thyristor 14 are associated with second switch side.If using MOSFET not It is IGBT, then connection end represents according to common title source electrode, drain and gate in a mosfet.
Realize according to the present invention half-bridge module 10 semiconductor element successively or stacking arrangement, such as in fig 3b It is apparent.For this purpose, in the form of implementation for illustrating, in the first section 13, (here is the first half to the first semiconductor element Conductor diode 12) it is spatially arranged on the second semiconductor element (here is the first thyristor 14), and In the second section 15, the 3rd semiconductor element (here is the second semiconductor diode 16) is arranged in the 4th semiconductor element On (here is the second thyristor 18).Second section 15 is separated with the first section 13.Hereinafter will basis The description of the form of implementation to Fig. 3 b is carried out as thyristor 14,18 using IGBT.But for technology in the art It is clear that other thyristors, such as such as MOSFET or all can also be adopted so according to the present invention for personnel Class.For this and thyristor it is relatively purely illustrative using anode-side and cathode side, so as to represent hot side or Low potential side.It is clear that using MOSFET, (it can also lead in opposite direction for those skilled in that art It is logical) when, attachment relationship is in this case contrary.And terminology electrode connecting end and emitter stage connection end are for MOSFET Referred to as source electrode connection end and drain electrode connection end.
First semiconductor element that is, the first semiconductor diode 12 has the first side and the second side.First side has the One electrode 12.1 and represent cathode connection terminal.Second side has second electrode 12.2 and represents the first semiconductor diode 12 Anode connection end.First semiconductor diode 12 is associated with first switch side, and the first switch side was said before for example representing Half-bridge it is high-end.Via articulamentum 24, the first electrode 12.1 of the first semiconductor diode 12 is mechanically and electrically conduction Attachment structure 20.
Second semiconductor element has the first side and the second side as the first i.e. IGBT of thyristor 14.The first half First side of conductor switch element 14 has first electrode 14.1 (it represents colelctor electrode connection end or input) and here generation The anode-side of the first thyristor of table 14.Second side of the first thyristor 14 has second electrode 14.2 (it represents emitter stage connection end or output end) and here represents the cathode side of the first thyristor 14.In addition first Thyristor 14 has the 3rd connection end 14.3, the 3rd connection end on the edge of the first thyristor 14 For example correspond to gate pole connection end.Gate pole connection end 14.3 is generally arranged on one of the first side or the second side on edge, This can be arranged on the upside of IGBT 14.Here, articulamentum 26 and/or conduction connecting structure 21 will not extend up to partly lead On the edge of body switch element 14, it is achieved in for the space of gate pole connection end.First thyristor 14 is associated with Second switch side, the half-bridge downside that the second switch side was said before for example representing.Via articulamentum 27, the first semiconductor switch Second side of element 14 or second electrode 14.2 are mechanically and electrically conduction connecting structure 22.
Conduction connecting structure 22 by the second electrode 14.2 of the first thyristor 14 via articulamentum 28 with the First electrode 16.1 on first side of three semiconductor elements that is, the second semiconductor diode 16 connects, and both is attached troops to a unit respectively In second switch side.First side of the second semiconductor diode 16 or first electrode 16.1 represent the second semiconductor diode 16 Anode-side or anode connection end.Second semiconductor diode 16 is same with the second side for including second electrode 16.2, its representative The cathode side of the second semiconductor diode 16.Articulamentum 28 sets up the machine of the second semiconductor diode 16 and conduction connecting structure 22 Tool and electrical connection.Therefore the cathode side or cathode connection terminal that is, second electrode 14.2 of the first thyristor 14 or Emitter stage connection end is connected with the anode-side of the second semiconductor diode 16 via conduction connecting structure 22.In the second semiconductor First side of diode 16 or the second side of the thyristor 14 of first electrode 16.1 and first or second electrode 14.2 it Between conduction connecting structure 22 however can also be implemented by so-called pressure welding lead, be thus at least connected with layer 28 and cancel.
4th semiconductor element that is, the second thyristor 18 (here is, for example, IGBT) have the first side and the Two sides.First side of the second thyristor 18 has first electrode 18.1 (it represents emitter stage connection end or output end) And here represents the cathode side of the second thyristor 18.Second side of the second thyristor 18 has second Electrode 18.2 (its represent colelctor electrode connection end or input) and here represents the anode-side of the second thyristor 18. Additionally, the second thyristor 18 has the 3rd connection end 18.3 on the edge of the second thyristor 18, 3rd connection end for example corresponds to gate pole connection end.Gate pole connection end can for example be arranged on the upper of thyristor 18 On side.For the edge that this articulamentum 30 and/or conduction connecting structure 21 do not extend into thyristor 18.The second half lead Body switch element 18 is associated with first switch side, and the half-bridge that the first switch side was said before for example representing is high-end.Via connection Layer 31, the second side of the second thyristor 18 or second electrode 18.2 are mechanically and electrically conduction connecting structure 20.Conduction connecting structure 20 that is, the second thyristor 18 of connection and the first semiconductor diode 12, they match somebody with somebody respectively Belong to first switch side.Particularly, the colelctor electrode connection end (second electrode 18.2) and first of the second thyristor 18 The cathode side (first electrode 12.1) of semiconductor diode 12 is connected via conduction connecting structure 20.In the pole of the first semiconductor two Between first side of pipe 12 or the second side of the thyristor 18 of first electrode 12.1 and second or second electrode 18.2 Conduction connecting structure 20 however can also be implemented by so-called pressure welding lead, be thus at least connected with layer 24 and cancel.
Between the first semiconductor diode 12 and the first thyristor 14 and the second semiconductor diode 16 Another 3rd conduction connecting structure 21 is provided between the second thyristor 18, the conduction connecting structure 21 forms bridge Branch road and complete with the collective effect of connecting structure for electrical equipment 20 and 22 and realize that the first semiconductor diode 12 is led with the second half Being connected in parallel for body switch element 18 and being connected in parallel for the second semiconductor diode 16 and the first thyristor 14, Wherein semiconductor diode 12 and 16 connects relative to the inverse parallel of corresponding thyristor 14 or 18.3rd is conductively connected The here of structure 21 via articulamentum 25,26,29 and 30 respectively be mechanically and electrically the first semiconductor diode 12, On semiconductor switch element 14, the second semiconductor diode 16 and the second thyristor 18.More precisely, first Semiconductor diode 12 is via articulamentum 25 is with its second side or second electrode 12.2 that is, anode-side is connected to the 3rd conduction even Binding structure 21.First thyristor 14 via articulamentum 26 with the first side or first electrode 14.1, here that is, with The colelctor electrode side of IGBT is connected to the 3rd conduction connecting structure 21.Second semiconductor diode 16 via articulamentum 29 with its second Side or second electrode 16.2 that is, cathode side is connected to the 3rd conduction connecting structure 21.Second thyristor 18 is via even Connect layer 30 and the 3rd conduction connecting structure is connected to the emitter side of its first side or first electrode 18.1 that is, IGBT.The 3rd In addition the 3rd connection end 41 is provided with conduction connecting structure 21, the 3rd connection end forms the phase output terminal of a phase.3rd connects Connecing 41 heres of end can be arranged on the optional position of the 3rd conduction connecting structure 21, but the example in the form of implementation for illustrating Illustrate between first area 13 and second area 15 to property.
It is real by the arrangement of the semiconductor element 12,14,16,18 described in accompanying drawing 3b according to the present invention Stacked arrangement structure is showed, wherein the first and second switch-sides are connected with each other by intersection and are arranged.In addition what is will also recognize that is (ginseng See Fig. 3 a), the arrangement is made up of the branch of two parallel connections, and each branch has a thyristor and one and half The series circuit of conductor diode.By using multiple, such as three semiconductor modules for illustrating in fig 3b, it is possible to achieve tool There is the power model of three phase lines.For this purpose, semiconductor module is arranged in juxtaposition or is stacked up and down and connection end 37 and semiconductor module The first switch side of each is connected in block, and the second connection end 39 and the second switch of each in semiconductor module Side is connected, so that each semiconductor module is connected in parallel.
In another design of the half-bridge module 10 according to the present invention, by the first semiconductor diode 12 and the first half The stacking that is, first area 13 that conductor switch element 14 is constituted is arranged on basal layer 33.Here, the first semiconductor switch is first Part 14 is mechanically and electrically via articulamentum 27 with basal layer 33.In addition by the second semiconductor diode 16 and the second semiconductor The stacking that is, second area 15 of the composition of switch element 18 is arranged on another basal layer 35, another basal layer and basal layer 33 separate.Basal layer 33,35 is made up of respectively conductive material, and the conductive material has the relatively good capacity of heat transmission.In base First connection end 37 can be set on plinth layer 35, and it is connected with positive potential.Second connection end 39 can be set on basal layer 33, It is connected with negative potential.In addition set, the first connection end 37 is directly with the 4th semiconductor element 18 that is, the second semiconductor switch The second electrode 18.2 of element 18 connects, and the second connection end 39 is directly with the second semiconductor element 14 that is, the first semiconductor is opened The second electrode 14.2 for closing element connects.In the form of implementation for illustrating, the 3rd conduction connecting structure 21 equally also with basal layer 34 connections.The 3rd connection end 41 can also be directed to the optional position of half-bridge module 10 via basal layer 34.
Basal layer 33 to 35 is arranged on separation layer 43.Separation layer 43 is made up of non electrically conductive material such as aluminum oxide.But Other materials or material are also what is be contemplated that.
Separation layer 43 is arranged on another basal layer 45, and the basal layer 45 is continuous and via articulamentum 47 and cooling Body 49 connects.Basal layer 45 is right rather than forces what is needed, so as to separation layer 43 directly can also be arranged on via articulamentum 47 In cooling body 49.
Separation layer 43, selectable basal layer 45, articulamentum 47 and cooling body 49 form cooling device 51, to derive half The heat produced in bridge module 10.But setting, cooling device 51 can also be by the ways and means different from herein proposing To implement.Particularly it is contemplated that cooling device 51 includes that cooling current or first area 13 and second area 15 exist It is connected on cooling device in the case of without basal layer 35 or separation layer 43.
Fig. 4 illustrates another form of implementation of the half-bridge module 10 ' according to the present invention with double-sided cooled.Because partly leading The heat produced in body switch element can be derived by the both sides of half-bridge module 10 ' now, so the second stacking 15 can run Fall down to the ground and be arranged in half-bridge module 10 ', so as to the 3rd semiconductor element 16 (here is the second semiconductor diode 16) sets now Put under the 4th semiconductor element 18 (here is the second thyristor 18), wherein, in the first semiconductor diode 12 and first between thyristor 14 and the second thyristor 18 and the second semiconductor diode 16 it Between be provided with conduction connecting structure 21.Thus greatly simplify in semiconductor element 12, the electrical connection between 14,16,18.Figure 4 form of implementation is described according to the MOSFET as thyristor 14,18.It is present in the colelctor electrode connection end of this IGBT Corresponding to the drain electrode connection end of MOSFET, and the emitter stage connection end of IGBT is corresponding to the source electrode connection end of MOSFET.
First semiconductor element that is, the first semiconductor diode 12 are in the 3rd form of implementation via the machine of articulamentum 24 Tool and it is electrically disposed on basal layer 33 and is attached thereto.First semiconductor diode 12 has the first side and the second side. First side has first electrode 12.1 and represents the cathode side of the first semiconductor diode 12, to realize leading with the second half The inverse parallel connection of body switch element 18.Conduction connecting structure 20 sets up the first side of the first semiconductor diode 12 or first electric Second side of the thyristor 18 of pole 12.1 and second or the electrical connection of second electrode 18.2.Connecting structure for electrical equipment 20 is another Selection of land can also pass through public basal layer and realize, the basal layer can be realized in the first side of the first semiconductor diode 12 or the Conductor road between second side or second electrode 18.2 of one electrode 12.1 and the second thyristor 18.With conductor The DCB substrates of road structure can represent such basal layer.Second side of the first semiconductor diode 12 is second electric Pole 12.2 represents the anode-side of the first semiconductor diode 12 or anode connection end.Via articulamentum 25, the second side or second electric Pole 12.2 is mechanically and electrically with conduction connecting structure 21.
The first thyristor 14 is arranged with the first semiconductor diode 12.First thyristor 14 have the first side with first electrode 14.1 and the second side with second electrode 14.2.First side here is that semiconductor is opened Close the upside of element 14 and be mechanically and electrically with conduction connecting structure 21 via articulamentum 26.Second side is via articulamentum 27 are mechanically and electrically with conductive basal layer 35 '.First electrode 14.1 represents the drain electrode connection end of MOSFET, and second is electric Pole 14.2 represents source electrode connection end, and they are respectively via conduction connecting structure 21 or via basal layer 35 ' and the second semiconductor two Pole pipe 16 is electrically connected.In addition the first thyristor 14 has the 3rd connection end or the 3rd electrode 14.3, and the 3rd connects It is grid connection end or control connection end to connect end.The first side that connection end 14.3 can be arranged on thyristor 14 with here On.For this purpose, semiconductor diode 12 is for example slightly arranged and connected with staggering relative to the edge of thyristor 14 Layer 26 and/or conduction connecting structure 21 do not extend up to the edge of thyristor 14.
Basal layer 35 ' be it is continuous, so as in first area 13 first thyristor 14 via articulamentum 27 It is connected with basal layer 35 ', and second semiconductor diode 16 connects via articulamentum 28 and basal layer 35 ' in second area 15 Connect.Articulamentum 27 and 28 is represented in semiconductor element 14, being mechanically and electrically between 16 and basal layer 35 '.Basal layer 35 ' Electrical connection is set up between the first thyristor 14 and the second semiconductor diode 16, both is associated with second and opens Close side.Set up in the first side of the first thyristor 14 or first electrode 14.1 and second via conduction connecting structure 21 Connection between second side of semiconductor diode 16 or second electrode 16.2.Second semiconductor diode 16 is same with first Side (it has first electrode 16.1 or anode connection end) and the second side (it has second electrode 16.2 or cathode connection terminal).Cause This, the source side or second electrode 14.2 of the first thyristor 14 is via basal layer 35 ' and the second semiconductor diode 16 anode-side or first electrode 16.1 are connected with each other.Via conduction connecting structure 21, the leakage of the first thyristor 14 Pole side or first electrode 14.1 are connected with each other with the cathode side or second electrode 16.2 of the second semiconductor diode 16, so as to second The inverse parallel of 16 and first thyristor of semiconductor diode 14 it is connected with each other.3rd semiconductor element 16, in the reality Apply i.e. the second semiconductor diode 16 in form be arranged on the 4th semiconductor element 18, i.e. the second semiconductor in the form of implementation Under switch element 18, this is because due to double-sided cooled, the stacking of the second section 15 is exactly reverse.
First side or first electrode of the conduction connecting structure 21 via the thyristor 18 of articulamentum 30 and second 18.1 are mechanically and electrically.First side of the second thyristor 18 has first electrode 18.1 or source electrode connection end. Conduction connecting structure 21 makes the first side of the second thyristor 18 or the semiconductor diode of first electrode 18.1 and first 12 the second side or second electrode 12.2 connect.Via articulamentum 31, second side or second of the second thyristor 18 Electrode 18.2 (it represents drain electrode connection end) is connected with basal layer 35.Via conduction connecting structure 20, basal layer 35 and basal layer 33 connections, in other words the of the second side of the second thyristor or the semiconductor diode 12 of second electrode 18.2 and first Side or first electrode 12.1 connect.Therefore, the first semiconductor diode 12 and the inverse parallel of the second thyristor 18 connects Connect.
Conduction connecting structure 20 can also pass through common basal layer and realize.For example, half-bridge module 10 ' that is, first area 13 and second area 15 can be arranged on common basal layer as in DCB (direct copper) substrate.DCB substrates are steel structures, its Conductive and heat conduction connection can be realized, by it however the passage that can mill out or slot out, so as to constitute conductor road.
Separation layer 43 ' is connected with the basal layer 35 ' shown in Fig. 4.Separation layer 43 ' is nonconducting layer.For example isolate Layer 43 ' can be manufactured by alumina material.Another basal layer 45 ' is connected with separation layer 43 ', the basal layer 45 ' is via even Connect layer 47 ' to be mechanically connected with cooling body 49 '.Basal layer 45 ' is not to force needs, so as to separation layer 43 ' can also direct Jing It is connected with cooling body 49 ' by articulamentum 47 '.Layer 43 ', 45 ', 47 ' and cooling body 49 ' provide the second cooling device 51 ', thus, Half-bridge module 10 ' with cooling device 51 is equipped with double-sided cooled, that is, the cooling of the both sides by semiconductor element.
Second connection end 39 (it for example sets up the connection with negative pole) is arranged on basal layer 35 ', that is, is led with the first half Second side of body switch element 14 or the first side or the first electrode of the semiconductor diode 16 of second electrode 14.2 and second 16.1 electrical connections.First connection end 37 (it for example sets up the connection with positive pole) is arranged on basal layer 35, and with second Second side of thyristor 18 or the first side of the semiconductor diode 12 of second electrode 18.2 and first are first electric Pole 12.1 is electrically connected.3rd connection end 41 is connected and is disposed thereon with conduction connecting structure 21.Such as the 3rd connection end 41 Can also intercept via the basal layer 34 being connected with conduction connecting structure 21.Alternatively, the 3rd connection end 41 can also be half Conduction connecting structure 21 is connected on the edge of bridge module 10 ' and is attached thereto.
Being stacked up and down by semiconductor element, semiconductor module needs a small amount of space and has the electromagnetism of improvement for this Compatibility.In addition such arrangement allows higher electrical load.Furthermore stray inductance can be reduced and therefore also dropped Low switch time and loss.
Can also be by being arranged in juxtaposition structure or by folded according to the semiconductor module of the present invention using figure 4 illustrates Put the power model that arrangement is realized having three phase lines.For each first in this connection end 37 and semiconductor module Switch-side is connected, and connection end 39 is connected with the second switch side of each in semiconductor module, so as to these are partly led Module is connected in parallel.

Claims (24)

1. a kind of semiconductor module (10,10 ', 10 "), including：At least one first semiconductor elements (12), the first semiconductor element Part has the first side with first electrode (12.1) and the second side with second electrode (12.2)；And at least one second Semiconductor element (14), the second semiconductor element has the first side with first electrode (14.1) and with second electrode (14.2) the second side, wherein, the first semiconductor element (12) is arranged on the second semiconductor element (14), is led the first half Conduction connecting structure (21) is disposed between volume elements part (12) and the second semiconductor element (14), wherein, the first semiconductor element (12) second electrode (12.2) is connected with the conduction connecting structure (21) in the way of mechanically and electrically, the second semiconductor element The first electrode (14.1) of part (14) is connected with the conduction connecting structure (21) in the way of mechanically and electrically.
2. semiconductor module (10,10 ') according to claim 1, it is characterised in that the semiconductor module also has the 3rd Semiconductor element (16) and the 4th semiconductor element (18), wherein, in the first section (13), the first semiconductor element (12) is matched somebody with somebody Put and give first switch side, the first semiconductor element (12) is spatially arranged and is being allocated to the second semiconductor element of second switch side On part (14), and in the second section (15) separated with the first section (13), the 3rd semiconductor element (16) is allocated to Second switch side, the 3rd semiconductor element (16) is arranged on the 4th semiconductor element (18) for being allocated to first switch side, Wherein, the second electrode (18.2) on the second side of the 4th semiconductor element (18) is electric with the first of the first semiconductor element (12) Pole (12.1) is conductively connected, the second electrode (14.2) of the second semiconductor element (14) with the of the 3rd semiconductor element (16) First electrode (16.1) on side is conductively connected, wherein, the first connection end (37) and the second of the 4th semiconductor element (18) Electrode (18.2) is electrically connected, and the second connection end (39) electrically connect with the second electrode (14.2) of the second semiconductor element (14) Connect, the conduction connecting structure (21) is by the second electrode (12.2) and the second semiconductor element of the first semiconductor element (12) (14) first electrode (14.1) is with the second electrode (16.2) on the second side of the 3rd semiconductor element (16) and the 4th First electrode (18.1) electrical connection on first side of semiconductor element (18), wherein, in the conduction connecting structure (21) On be disposed with the 3rd connection end (41) of semiconductor module (10,10 ').
3. semiconductor module (10,10 ') according to claim 1, it is characterised in that the semiconductor module also has the 3rd Semiconductor element (16) and the 4th semiconductor element (18), wherein, in the first section (13), the first semiconductor element (12) is matched somebody with somebody Put and give first switch side, the first semiconductor element (12) is spatially arranged and is being allocated to the second semiconductor element of second switch side On part (14), and in the second section (15) separated with the first section (13), the 3rd semiconductor element (16) is allocated to Second switch side, the 3rd semiconductor element (16) is arranged under the 4th semiconductor element (18) for being allocated to first switch side, Wherein, the second electrode (18.2) on the second side of the 4th semiconductor element (18) is electric with the first of the first semiconductor element (12) Pole (12.1) is conductively connected, the second electrode (14.2) of the second semiconductor element (14) with the of the 3rd semiconductor element (16) First electrode (16.1) on side is conductively connected, wherein, the first connection end (37) and the second of the 4th semiconductor element (18) Electrode (18.2) is electrically connected, and the second connection end (39) electrically connect with the second electrode (14.2) of the second semiconductor element (14) Connect, conduction connecting structure (21) is by the second electrode (12.2) of the first semiconductor element (12) and the second semiconductor element (14) First electrode (14.1) is with the second electrode (16.2) on the second side of the 3rd semiconductor element (16) and in the 4th semiconductor First electrode (18.1) electrical connection on first side of element (18), wherein, half is disposed with conduction connecting structure (21) 3rd connection end (41) of conductor module (10,10 ').
4. semiconductor module (10,10 ') according to Claims 2 or 3, it is characterised in that the first semiconductor element (12), The first electrode and second electrode of the second semiconductor element (14), the 3rd semiconductor element (16) and the 4th semiconductor element (18) With corresponding conduction connecting structure (20,21,22) via articulamentum (24,25,26,27,28,29,30,31) with mechanically and electrically Mode be connected.
Semiconductor module 5. according to one of Claims 1-4 (10,10 ', 10 "), it is characterised in that at least one half Conductor element (12,14,16,18) with the 3rd electrode, the 3rd electrode be arranged at least one semiconductor element (12,14, 16, on edge 18).
Semiconductor module 6. according to one of claim 1 to 5 (10,10 ', 10 "), it is characterised in that the first semiconductor Element (12) and/or the second semiconductor element (14) respectively via articulamentum (24,27) in the way of mechanically and electrically with basis Layer (33,35 ') connection.
7. semiconductor module (10,10 ') according to claim 6, it is characterised in that the 3rd semiconductor element (16) and/ Or the 4th semiconductor element (18) respectively via articulamentum (28,30) in the way of mechanically and electrically with basal layer (35,35 ') even Connect.
8. the semiconductor module (10 ') according to one of claim 3 to 7, it is characterised in that the second semiconductor element (14) Second electrode (14.2) and the 3rd semiconductor element (16) first electrode (16.1) electrical connection via basal layer (35 ') Realize.
9. semiconductor module (10,10 ') according to one of claim 6 to 8, it is characterised in that the first connection end (37) It is arranged on the basal layer (35) in the second section (15), and the second connection end (39) are arranged on the basis in the first section (13) On layer (33,35 ').
10. semiconductor module according to claim 9 (10,10 ', 10 "), it is characterised in that basal layer (33,35,35 ', 52,53) it is arranged on nonconducting separation layer (43,43 ').
11. semiconductor modules (10,10 ') according to claim 10, it is characterised in that separation layer (43,43 ') and cooling Device (51,51 ') is connected.
A kind of 12. power models, wherein, three semiconductor modules (10,10 ') according to one of claim 2 to 8 are side by side Ground arrangement is stackedly arranged up and down, wherein, the first connection end (37) and the second connection end (39) are connected to three semiconductor modules In each in block (10,10 ').
13. it is a kind of be used to being arranged on semiconductor module (10,10 ', 10 ") semiconductor element (12,14,16, method 18), In the method, will include there is the first side of at least one first electrode (12.1) and with least one second electrode (12.2) At least one first semiconductor elements (12) of the second side be arranged in including with least one first electrode (14.1) the On at least one second semiconductor elements (14) of side and the second side with least one second electrode (14.2), its In, arrange between described at least one first semiconductor elements (12) and described at least one second semiconductor elements (14) and lead Electric connection structure (21), wherein, make at least one second electrode (12.2) and the conduction of the first semiconductor element (12) Attachment structure (21) connects in the way of mechanically and electrically, makes at least one first electrode of the second semiconductor element (14) (14.1) it is connected in the way of mechanically and electrically with the conduction connecting structure (21).
14. methods according to claim 13, it is characterised in that in the first section (13), by described at least one Semiconductor element (12) is allocated to first switch side, described at least one second semiconductor elements (14) is allocated to into second and is opened Side is closed, in the second section (15) separated with the first section (13), the 3rd semiconductor element of second switch side will be allocated to Part (16) is arranged on the 4th semiconductor element (18) for being allocated to first switch side, wherein, by the 4th semiconductor element (18) second electrode (18.2) on the second side is conductively connected with the first electrode (12.1) of the first semiconductor element (12), will The second electrode (14.2) of the second semiconductor element (14) and the first electrode on the first side of the 3rd semiconductor element (16) (16.1) it is conductively connected, wherein, by the second electrode (18.2) of the first connection end (37) and the 4th semiconductor element (18) electrically Connection, the second electrode (14.2) of the second connection end (39) and the second semiconductor element (14) is electrically connected, with being conductively connected Structure (21) is by the second electrode (12.2) of the first semiconductor element (12) and the first electrode of the second semiconductor element (14) (14.1) with the second electrode (16.2) on the second side of the 3rd semiconductor element (16) and in the 4th semiconductor element (18) The first side on first electrode (18.1) electrical connection, wherein, arrange semiconductor module on conduction connecting structure (21) 3rd connection end (41) of (10,10 ').
15. methods according to claim 13, it is characterised in that in the first section (13), by described at least one Semiconductor element (12) is allocated to first switch side, described at least one second semiconductor elements (14) is allocated to into second and is opened Side is closed, in the second section (15) separated with the first section (13), the 3rd semiconductor element of second switch side will be allocated to Part (16) is arranged under the 4th semiconductor element (18) for being allocated to first switch side, wherein, by the 4th semiconductor element (18) second electrode (18.2) on the second side is conductively connected with the first electrode (12.1) of the first semiconductor element (12), will The second electrode (14.2) of the second semiconductor element (14) and the first electrode on the first side of the 3rd semiconductor element (16) (16.1) it is conductively connected, wherein, by the second electrode (18.2) of the first connection end (37) and the 4th semiconductor element (18) electrically Connection, the second electrode (14.2) of the second connection end (39) and the second semiconductor element (14) is electrically connected, with being conductively connected Structure (21) is by the second electrode (12.2) of the first semiconductor element (12) and the first electrode of the second semiconductor element (14) (14.1) with the second electrode (16.2) on the second side of the 3rd semiconductor element (16) and in the 4th semiconductor element (18) The first side on first electrode (18.1) electrical connection, wherein, arrange semiconductor module on conduction connecting structure (21) 3rd connection end (41) of (10,10 ').
16. methods according to claims 14 or 15, it is characterised in that lead the first semiconductor element (12), the second half The first electrode and second electrode of volume elements part (14), the 3rd semiconductor element (16) and the 4th semiconductor element (18) with it is corresponding Conduction connecting structure (20,21,22) via articulamentum (24,25,26,27,28,29,30,31) connect in the way of mechanically and electrically Connect.
17. methods according to one of claim 13 to 16, it is characterised in that have the on edge using at least one Three electrodes semiconductor element (12,14,16,18).
18. methods according to one of claim 13 to 17, it is characterised in that make the first semiconductor element (12) and/or Second semiconductor element (14) via articulamentum (24,27) in the way of mechanically and electrically with basal layer (33,35 ') connect.
19. methods according to claim 18, it is characterised in that make the 3rd semiconductor element (16) and/or the 4th half lead Volume elements part (18) via articulamentum (28,31) in the way of mechanically and electrically with another basal layer (35,35 ') connect.
20. methods according to claim 19, it is characterised in that the second semiconductor element is realized by basal layer (35 ') (14) electrical connection between second electrode (14.2) and the first electrode (16.1) of the 3rd semiconductor element (16).
21. methods according to claim 19 or 20, it is characterised in that on the basal layer (35) in the second section (15) The first connection end (37) is arranged, and the second connection end (39) is arranged on the basal layer (33,35 ') in the first section (13).
22. methods according to one of claim 18 to 21, it is characterised in that by basal layer (33,35,35 ', 52,53) It is arranged on nonconducting separation layer (43,43 ').
23. methods according to right wants 22, it is characterised in that make separation layer (43,43 ') with cooling device (51,51 ') even Connect.
A kind of 24. methods for providing power model, wherein, by three partly leading according to one of claim 2 to 11 Module (10,10 ') stackedly arranges side by side or up and down, make the first connection end (37) be connected to three semiconductor modules (10, 10 ') on the first switch side on each semiconductor module in, and the second connection end (39) is made to be connected to three semiconductor modules On the second switch side on each semiconductor module in block (10,10 ').
CN201610810415.4A 2015-10-06 2016-09-08 Arrangement Structure Of Semiconductor Element In Semiconductor Module And Corresponding Method Pending CN106560921A (en)

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