CN106558621B - A kind of device at continuously adjustable plasmon resonance peak - Google Patents
A kind of device at continuously adjustable plasmon resonance peak Download PDFInfo
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- CN106558621B CN106558621B CN201610891749.9A CN201610891749A CN106558621B CN 106558621 B CN106558621 B CN 106558621B CN 201610891749 A CN201610891749 A CN 201610891749A CN 106558621 B CN106558621 B CN 106558621B
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- 239000000758 substrate Substances 0.000 claims abstract description 70
- 230000008859 change Effects 0.000 claims abstract description 27
- 230000000737 periodic effect Effects 0.000 claims abstract description 9
- 230000003252 repetitive effect Effects 0.000 claims abstract description 9
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 claims abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 41
- 229910021389 graphene Inorganic materials 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 26
- 230000006835 compression Effects 0.000 claims description 14
- 238000007906 compression Methods 0.000 claims description 14
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 claims description 4
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 4
- 229910000510 noble metal Inorganic materials 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 239000002086 nanomaterial Substances 0.000 description 15
- 230000008901 benefit Effects 0.000 description 5
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 150000001336 alkenes Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1606—Graphene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Abstract
The invention discloses a kind of devices at continuously adjustable plasmon resonance peak, comprising: the flexible substrates with periodic structure, and periodically it is arranged on a flexible substrate and has the band of surface plasmon resonance property；Change period and the amplitude of flexible substrates by compressing or stretching flexible substrates, to change the geometry of band and its effective dielectric constant of local environment, realizes the adjustable of plasmon resonance peak.The minimum repetitive unit of the cross-sectional shape of flexible substrates is sinusoidal, triangle, trapezoidal or semicircle.Band coverage area is less than the half period of the minimum repetitive unit of the flexible substrates.The beneficial effect of the position at a wide range of continuous controllable adjustment plasmon resonance peak can be achieved in the present invention.
Description
Technical field
The invention belongs to Meta Materials fields, more particularly, to a kind of device at continuously adjustable plasmon resonance peak.
Background technique
The continuously adjustable of plasmon resonance peak has great significance for fields such as bio-sensing, photoelectricity.It is existing
In document, for traditional metal material, it can mainly be changed by the size and interval, size itself that change the structure of preparation
Become the position of formant, while interval will affect the coupling between structure, to influence the position of formant.For graphite
This material of alkene, electronics are the Two-dimensional electrons of massless, size, interval and layer in addition to changing graphene nano structure
Number, can also be being adjusted by way of changing the fermi level of graphene.Change size, the interval of graphene nano structure
It can change the spacing of internal structure unit with the number of plies, to change the movement that stiffness of coupling realizes formant.Chemical doping with
Grid voltage two ways principle is identical, is all the concentration by changing carrier to change the fermi level of graphene to adjust
Save the position at plasmon resonance peak.The former can be doped graphene by the processing of solion, be one passive
The device of device, the latter's preparation is active, but can be achieved on continuously adjusting for formant.For example, existing literature Yang X,
Kong X T, Bai B, et al.Substrate Phonon-Mediated Plasmon Hybridization in
Coplanar Graphene Nanostructures for Broadband PlasmonicCircuits [J] .Small,
2015,11 (5): 591-596, other document Ju L, Geng B, Horng J, et an al.Grapheneplasmonics
For tunable terahertz metamaterials [J] .Nature nanotechnology, 2011,6 (10): 630-
634, grid voltage is introduced to the graphene nanobelt of preparation on a silicon substrate by the structure of field effect transistor, makes graphite
The fermi level of alkene changes, while the influence to the size and duty ratio of nanostructure is studied, and graphite is realized
The formant of alkene phasmon is in the adjustable function of specific band.
In these types of regulative mode, change size, interval, number of plies of nanostructure etc. and chemical doping these mode lists
Secondary processing can only obtain single data, to enable the position at peak to change in a certain range, need repeatedly to be handled, work
Work amount is big and is unable to consecutive variations, and what is obtained is one group of discrete spectral line within the scope of this, and the side by introducing grid voltage
Formula, although the position of the formant of graphene phasmon can continuously be adjusted, entirely device is active, in energy consumption
It is upper not have advantage, and voltage range is restricted, can only adjust in a small range.
Summary of the invention
In view of the drawbacks of the prior art, the present invention provides a kind of device at continuously adjustable plasmon resonance peak,
Purpose is to realize a wide range of continuous controllable adjustment at plasmon resonance peak using the good mechanical performance of flexible substrates；Purport
It is small in the adjustable range for solving the problems, such as plasmon resonance peak in the prior art.
To achieve the above object, the present invention provides a kind of device at continuously adjustable plasmon resonance peak, features
It is, comprising: the flexible substrates with periodic structure, and be periodically arranged in the flexible substrates and there is surface
The band of plasmon resonance property；Changed by compressing or stretching the flexible substrates flexible substrates period and
Amplitude realizes plasmon resonance peak to change the geometry of band and its effective dielectric constant of local environment
It is adjustable.
Further, the minimum repetitive unit of the cross-sectional shape of flexible substrates be sinusoidal, it is triangle, trapezoidal or half
It is round.As long as strain that substrate is subject to can change the geometry and its local environment of band when deformation occurs for substrate
Effective dielectric constant can realize the purpose for adjusting plasmon resonance peak.
Further, band coverage area is less than the half period of the minimum repetitive unit of the flexible substrates.The present apparatus
It is the surface plasmon resonance of local for range, cannot covers or connect between band and band, need certain
Gap is just able to satisfy the condition that resonance occurs.
Further, band is arranged at the peaks or valleys of the flexible substrates.When substrate is stretched or compresses,
The strain that the band of peaks or valleys is subject to is maximum, can obtain best regulating effect.
Further, band is arranged at the peak and valley of the flexible substrates simultaneously.
Further, the material of band is graphene or noble metal with two-dimentional massless electronics.For graphene
This material, electronics are the Two-dimensional electrons of massless, size, interval and the number of plies in addition to changing graphene nano structure,
It can also be being adjusted by way of changing the fermi level of graphene.Change graphene nano structure size, interval and
The number of plies can change the spacing of internal structure unit, to change the movement that stiffness of coupling realizes formant.
Further, the material of band is gold or silver.
Further, the material of flexible substrates is dimethyl silicone polymer, and the material of the band is graphene.Poly- two
Methylsiloxane is a kind of transparent flexible substrates, has certain range of stretch, can change substrate by adjusting to match
Level of stretch.Graphene is a kind of two-dimensional material, and adjusting for plasmon resonance peak can also be by changing fermi level
Mode is realized, and graphene itself also has certain flexibility, there is good mechanical performance.
Further, the range of the compression or elongation strain that are applied in the flexible substrates by different materials most
Big compression or level of stretch determine, compression strain generally 0~1 range, maximum value is determined by maximum compression degree, by formula
Sub- ε=(L0-L)/L0It provides, wherein L0For the initial length of substrate, L is the length after substrate compression, is had when L is minimized
Maximum compression strain.Elongation strain is generally higher than 0, and maximum value is determined by maximum tension degree, by formula ε=(L0-L)/L0It gives
Out, wherein L0For the initial length of substrate, L is the length after substrate tension, there is maximum tension strain when L is maximized.
Contemplated above technical scheme through the invention, it is compared with prior art, flexible due to using flexible material
The stretchable or compression degree of material by itself property determine, by mechanical means, significantly can continuously stretch or
Person's compress substrate to change the strain that substrate is subject to, and then changes the effective dielectric constant of band present position, can obtain
The beneficial effect of the position at a wide range of continuous controllable adjustment plasmon resonance peak.
Detailed description of the invention
Fig. 1 is first embodiment schematic diagram according to the invention；
Fig. 2 is second embodiment schematic diagram according to the invention；
Fig. 3 is third embodiment schematic diagram according to the invention.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
It is an object of the invention to provide a new dimension to continuously adjusting for plasmon resonance peak, flexible base is utilized
The good mechanical performance at bottom achievees the purpose that a kind of continuous controllable adjustment plasmon resonance peak.This mode is also passive
, there is advantage in energy consumption.Simultaneously larger range of adjusting can be obtained in conjunction with existing technology.
A kind of device at continuously adjustable plasmon resonance peak provided by the invention includes: with the soft of periodic structure
Property substrate 1, and periodically be arranged in flexible substrates 1 with surface plasmon resonance property band 2；Pass through compression
Or flexible substrates 1 are stretched to change period and the amplitude of substrate 1, to realize the adjustable of plasmon resonance peak.
The minimum repetitive unit of the cross-sectional shape of flexible substrates 1 with periodic structure can be sinusoidal, triangle
It is shape, trapezoidal or semicircle.
2 coverage area of band with surface plasmon resonance property should be less than the flexible substrates with periodic structure
The half period of 1 minimum repetitive unit, it is ensured that have gap between adjacent nanostructure, not will form continuous film.Have
The size of the band 2 of plasmon resonance property will affect the position of formant, when the width of band increases, the position of formant
Setting can be mobile to long wave length direction.
When band 2 to be arranged in the position of peaks or valleys of substrate 1, deformation quantity is maximum, can achieve optimal
Effect.By taking the minimum repetitive unit of cross section is the substrate of sinusoidal as an example, to obtain optimal regulating effect, can will have
The band 2 of surface plasmon resonance property is arranged in the position at peak and perhaps the position of paddy or peak and valley is arranged in simultaneously
Position.
As long as the material with surface plasmon resonance property can realize our goal of the invention, for example, having
Graphene, noble metal such as gold, silver of two-dimentional massless electronics etc..
As an embodiment of the present invention, the band 2 with plasmon resonance property is graphene, is had periodically
The flexible substrates 1 of structure are dimethyl silicone polymers.
In embodiments of the present invention, in addition to the components described above, the material with plasmon resonance property of the invention is also
It can be the other materials such as metal, such as gold, silver.
By taking the minimum repetitive unit of cross section is the substrate of sinusoidal as an example.The initial length of substrate is denoted as L0, compress it
Length afterwards is denoted as L, and the strain stress after substrate compression is by formula ε=(L0-L)/L0It provides, when strain increases, formant can be to
Long wave length direction is mobile, also cries red shift, this is because the geometry of band changes during compression, locating for
The effective dielectric constant of environment can become larger, to obtain formant in the longer position of wavelength.Conversely, when elongate substrate,
Strain after substrate tension is by formula ε=(L0-L)/L0It providing, when strain increases, the geometry of band changes,
The effective dielectric constant of locating environment can reduce, and formant can be mobile to shortwave length direction, also be blue shift.
In embodiments of the present invention, the band 2 with plasmon resonance property is graphene, with periodic structure
Flexible substrates 1 are dimethyl silicone polymers.The flexible substrates of periodic structure can be various shapes, if cross section is sinusoidal
Structure, rectangular raster structure etc..Band 2 with plasmon resonance property can periodically be placed in appointing for flexible substrates 1
It anticipates position, when such as substrate being sinusoidal, to keep deformation quantity maximum, peak, the paddy position of sinusoidal substrate can be placed in, or simultaneously
It is placed in the position of peak and valley.
In embodiments of the present invention, in addition to the components described above, the material with plasmon resonance property of the invention is also
It can be the other materials such as metal, such as gold, silver.
We can select suitable material according to specific application field, and device provided by the invention can be applied to give birth to
The numerous areas such as analyte detection, Meta Materials and integrated plasma circuit.Usually combined process prepares nanostructure size
The limit, and according to waveband selection suitable material, wherein metal is generally used for visible light near infrared band, and graphene is generally used
It is infrared in arrive terahertz wave band.Such as existing document Rodrigo D, Limaj O, Janner D, et al.Mid-
Infrared plasmonicbiosensing with graphene [J] .Science, 2015,349 (6244): 165-168.
It is scanned in middle infra-red range by the variation of resonant positions, when having biomolecule such as protein on the surface of graphene
When, it will appear a recess at the position of formant, thus achieved the purpose that biological detection.Separately there is document Adato R,
Altug H.In-situ ultra-sensitive infrared absorption spectroscopy of
biomolecule interactions in real time with plasmonicnanoantennas[J].Nature
Communications, 2013,4. also achieve the function of biological detection in infrared band using the nanostructure of metal.Also
Document Ju L, Geng B, Horng J, et al.Grapheneplasmonics for tunable terahertz
Metamaterials [J] .Nature nanotechnology, 2011,6 (10): 630-634 uses the graphene of nanostructure
Band is prepared for Meta Materials, by the fermi level of control duty ratio and graphene, changes the position of the formant of graphene, from
And realize the adjusting of Spectral Extinction.
A wide range of continuous controllable adjustment plasmon resonance peak may be implemented in structure according to the invention and regulative mode
Position.Meta Materials based on this invention can be used for biomolecule detection, in-situ chemical reaction monitoring and it is integrated etc. from
Daughter circuit etc..
In existing document, for traditional metal material, mainly by change preparation structure size and
Every size itself can change the position of formant, while interval will affect the coupling between structure, to influence formant
Position.Material this for graphene, electronics are the Two-dimensional electrons of massless, the ruler in addition to changing graphene nano structure
Very little, interval and the number of plies, can also be being adjusted by way of changing the fermi level of graphene.Change graphene nano knot
Size, interval and the number of plies of structure can change the spacing of internal structure unit, to change the shifting that stiffness of coupling realizes formant
It is dynamic.The fermi level for changing graphene can be realized by chemical doping with grid voltage two ways, by changing current-carrying
The concentration of son is to change the fermi level of graphene to adjust the position at plasmon resonance peak.For example, existing literature Yang
X, Kong X T, Bai B, et al.Substrate Phonon-Mediated Plasmon Hybridization in
Coplanar Graphene Nanostructures for Broadband PlasmonicCircuits [J] .Small,
2015,11 (5): 591-596 and document Ju L, Geng B, Horng J, et al.Grapheneplasmonics for
Tunable terahertz metamaterials [J] .Nature nanotechnology, 2011,6 (10): 630-634,
Grid voltage is introduced to the graphene nanobelt of preparation on a silicon substrate by the structure of field effect transistor, makes graphene
Fermi level changes, while the influence to the size and duty ratio of nanostructure is studied, and graphene etc. is realized
From the formant of excimer in the adjustable function of specific band.
In the prior art, size, interval or the number of plies etc. and chemical doping these modes for only changing nanostructure are not
The formant of surface phasmon can be continuously adjusted in a certain range, although preparation device can be it is passive.And
It is whole although the position of the formant of graphene phasmon can continuously be adjusted by way of introducing grid voltage
A device be it is active, do not have advantage in energy consumption, and limited by voltage range, can only be adjusted in a small range.This
Invention emulates to obtain by comsol, when 200 nanometers of bands are located at the peak for the periodic structure substrate that cross section is sinusoidal
Position when, by compress substrate, when compression strain from 0 variation be 0.8 when, resonant wavelength can be from 15.3 μm of red shifts to 25.2
μm, it may be implemented in the larger context continuously to adjust the position of formant.Simultaneously on the basis of the present invention, also
It can be combined with the regulative mode being previously mentioned to obtain better effect, be equivalent to and provide one in another freedom degree
A new regulative mode.
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Figures 1 and 2 show that first embodiment and second embodiment of the invention.As shown in fig. 1, according to this hair
Bright embodiment, main body are made of substrate 1 and band 2.Band 2 is periodically located in substrate, such as can be the position at peak
It sets, the shape of 1 cross section of substrate for example can be sinusoidal.Stripping for example can be graphene.When transverse compression substrate
When, since stress substrate can deformation occurs, to change the curvature of band present position, the position of band formant will occur
It is mobile.
As shown in Fig. 2, second embodiment according to the invention, main body composition is identical as Fig. 1, passes through cross directional stretch base
Bottom changes the curvature of band present position, the position of band formant can also be moved since stress substrate can deformation occurs
It is dynamic, but the reversible moving of band formant may be implemented on the contrary, in conjunction with first embodiment in moving direction.
Fig. 3 shows third embodiment, and main body is identical as Fig. 1 and Fig. 2, trapezoidal when stretching or compress substrate
Shape can change, to change the geometry of band and its effective dielectric constant of local environment, reach adjusting
Purpose.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (8)
1. a kind of device at continuously adjustable plasmon resonance peak characterized by comprising the flexibility with periodic structure
Substrate (1), and periodically it is arranged on the flexible substrates (1) and has the band of surface plasmon resonance property
(2)；Period and the amplitude for changing the flexible substrates (1) by compressing or stretching the flexible substrates (1), to change
The effective dielectric constant of band (2) local environment with surface plasmon resonance property realizes plasmon resonance peak
It is adjustable；Band (2) coverage area is less than the half period of the minimum repetitive unit of the flexible substrates (1).
2. device as described in claim 1, which is characterized in that the minimum of the cross-sectional shape of the flexible substrates (1) repeats
Unit is sinusoidal, triangle, trapezoidal or semicircle.
3. such as the described in any item devices of claim 1-2, which is characterized in that the band (2) is arranged in the flexible substrates
(1) at peaks or valleys.
4. such as the described in any item devices of claim 1-2, which is characterized in that the band (2) is arranged in the flexibility simultaneously
At the peak and valley of substrate (1).
5. such as the described in any item devices of claim 1-2, which is characterized in that the material of the band (2) is with two-dimentional nothing
The graphene or noble metal of quality electronic.
6. device as claimed in claim 5, which is characterized in that the material of the band (2) is gold or silver.
7. device as claimed in claim 5, which is characterized in that the material of the flexible substrates (1) is dimethyl silicone polymer.
8. device as claimed in claim 7, which is characterized in that the compression or stretching being applied on the flexible substrates (1)
Strain is determined by the maximum compression or level of stretch of different materials.
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| CN104345047A (en) * | 2014-11-03 | 2015-02-11 | 天津大学 | Fiber localized SPR (Surface Plasma Resonance) sensor based on periodic metal structure |
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| CN105405983A (en) * | 2015-12-14 | 2016-03-16 | 吉林大学 | Stretching organic electroluminescence device with periodically regular crease structure |
| CN105588829A (en) * | 2016-03-04 | 2016-05-18 | 中国科学院合肥物质科学研究院 | SERS measuring method continuously modulating substrate surface plasma resonance |
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