CN106558280A - Film crystal tube drive circuit - Google Patents
Film crystal tube drive circuit Download PDFInfo
- Publication number
- CN106558280A CN106558280A CN201510590404.5A CN201510590404A CN106558280A CN 106558280 A CN106558280 A CN 106558280A CN 201510590404 A CN201510590404 A CN 201510590404A CN 106558280 A CN106558280 A CN 106558280A
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- CN
- China
- Prior art keywords
- film transistor
- thin film
- tft
- drive circuit
- tube drive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Computer Hardware Design (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention provides a kind of film crystal tube drive circuit, including the thin film transistor (TFT) and light-emitting component of series connection；The charge storage cell being connected between the grid of the thin film transistor (TFT) and drain electrode；And cut-in voltage adjustable thin film transistor, its source electrode, drain electrode, grid and regulation electrode are respectively connecting to the grid of the thin film transistor (TFT), column scan signal source, line scan signals source and Regulate signal source.The film crystal tube drive circuit energy long-time stable work of the present invention.
Description
Technical field
The present invention relates to field of electronic circuitry, and in particular to a kind of transistor driver circuit.
Background technology
Thin film transistor (TFT) (TFT) is a kind of field-effect transistor, its as flat faced display (for example
Liquid crystal display) Primary Component, the performance of display is had a very important role.
Fig. 1 is a kind of film crystal tube drive circuit 10 of the prior art, and which is included in power supply V
Resistance 11, thin film transistor (TFT) 12 and the light emitting diode 13 being sequentially connected in series and reference ground G between, with
And the electric capacity 14 being connected between the grid of thin film transistor (TFT) 12 and drain electrode.Column scan signal source 17 leads to
The grid that thin film transistor (TFT) 15 is connected to thin film transistor (TFT) 12 is crossed, and line scan signals source 16 connects
To the grid of thin film transistor (TFT) 15, the voltage signal on line scan signals source 16 is used to control thin film crystalline substance
15 on or off of body pipe.
When needing the control conducting of light emitting diode 13 luminous, the voltage signal in line scan signals source 16
So that thin film transistor (TFT) 15 is turned on, thin film transistor (TFT) 15 pair of the column scan signal source 17 by conducting
Electric capacity 14 is charged so that the gate source voltage of thin film transistor (TFT) 12 be more than its cut-in voltage so that
Obtain the conducting of light emitting diode 13 luminous, afterwards grid of the line scan signals source 16 to thin film transistor (TFT) 15
Pole applies back bias voltage and keeps it turned off.
Oxide thin film transistor is widely used in all-transparent and flexible display screen at present, its having property
Can good, cost of material and the low advantage of process costs.But oxide semiconductor material exists substantial amounts of
Electron trap state, electron trap state can be captured with launching electronics under the disturbance of outside energy so as to carry
Different electric charges, the final cut-in voltage for causing oxide thin film transistor occur with the prolongation of time
It is serious to offset.Fig. 2 is the transfer characteristic curve of the thin film transistor (TFT) 15 in Fig. 1.In wherein Fig. 2
7 transfer characteristic curves be thin film transistor (TFT) 15 respectively under negative bias pressure condition, in bias
Between measure within 0 second, 100 seconds, 300 seconds, 500 seconds, 1000 seconds, 3000 seconds and 5000 seconds.From
Fig. 2 can be seen that the prolongation over time of the cut-in voltage of thin film transistor (TFT) 15 and be gradually reduced.
With reference to Fig. 1 and Fig. 2 it is known that the voltage signal provided in line scan signals source 16 is constant
In the case of, when the cut-in voltage of thin film transistor (TFT) 15 reduces, the drain-source current of thin film transistor (TFT) 15
Can increase, with the increase of working time, thin film transistor (TFT) 15 cannot be turned off completely, so as to make
Into the change of the grid voltage of thin film transistor (TFT) 12, the brightness for ultimately resulting in light emitting diode 13 occurs
Change.On the one hand such case can cause display performance to deteriorate, on the other hand the vision to observer
Cause adverse consequencess.
Further, since the time more than 99.8% of thin film transistor (TFT) 15 is at negative bias pressure condition, because
Back bias voltage light durability (NBIS, the Negative Bias Illumination of this thin film transistor (TFT)
Stability its cut-in voltage can be also affected), so as to impact to display performance.
In order that the stable performance of thin film transistor (TFT) 15, is all based on the intrinsic property of material at present
Its doping process and aftertreatment technology are optimized, so as to improve property of thin film and surface or interface
Quality.Even so, still there are the problems referred to above in oxide thin film transistor.In addition, in integrated electricity
Under the technique of road, it is difficult to ensure that the performance of each thin film transistor (TFT) is identical, so as to limit which in business
On application.Therefore a kind of energy is needed to cause the drive circuit of 13 steady operation of light emitting diode at present,
So that flat faced display steady operation.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of thin film transistor (TFT) of energy steady operation and drives
Circuit.
An embodiment provides a kind of film crystal tube drive circuit, including：
The thin film transistor (TFT) and light-emitting component of series connection；
The charge storage cell being connected between the grid of the thin film transistor (TFT) and drain electrode；And
Cut-in voltage adjustable thin film transistor, its source electrode, drain electrode, grid and regulation electrode connect respectively
Grid, column scan signal source, line scan signals source and Regulate signal source to the thin film transistor (TFT).
Preferably, the thin film transistor (TFT) and light-emitting component be sequentially connected in series power supply and reference ground it
Between.
Preferably, the film crystal tube drive circuit also includes and the thin film transistor (TFT) and luminous unit
The resistance of part series connection.
Preferably, the resistance is connected between the drain electrode of the power supply and the thin film transistor (TFT).
Preferably, the cut-in voltage adjustable thin film transistor is double source electrode film transistor.
Preferably, the cut-in voltage adjustable thin film transistor is double-gate film transistor, described double
The top-gated between its source electrode and drain electrode of grid thin film transistor (TFT) is used as the regulation electrode.
Preferably, the light-emitting component is light emitting diode.
Preferably, the charge storage cell is electric capacity.
The unlatching of the cut-in voltage adjustable thin film transistor in the film crystal tube drive circuit of the present invention
Voltage is constant or is basically unchanged, so as to film crystal tube drive circuit energy long-time stable works.
Description of the drawings
Embodiments of the present invention is further illustrated referring to the drawings, wherein：
Fig. 1 is the circuit diagram of film crystal tube drive circuit of the prior art.
Fig. 2 is the transfer characteristic curve of the thin film transistor (TFT) in Fig. 1.
Fig. 3 is the circuit diagram of the film crystal tube drive circuit according to first embodiment of the invention.
Fig. 4 is the transfer characteristic curve of the double source electrode film transistor in Fig. 3.
Fig. 5 is the cut-in voltage of the double source electrode film transistor in thin film transistor (TFT) and Fig. 3 in Fig. 1
Curve of deviation.
Fig. 6 is the circuit diagram of the film crystal tube drive circuit according to second embodiment of the invention.
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, below in conjunction with accompanying drawing
By specific embodiment, the present invention is described in more detail.
Fig. 3 is the circuit diagram of the film crystal tube drive circuit 20 according to first embodiment of the invention.
It is brilliant that film crystal tube drive circuit 20 is included in the thin film be sequentially connected in series between power supply V and reference ground G
Body pipe 12 and light emitting diode 13, the electric capacity being connected between the grid of thin film transistor (TFT) 12 and drain electrode
14, the double source very thin films being connected between the grid of column scan signal source 17 and thin film transistor (TFT) 12 are brilliant
Body pipe 25, the grid of wherein double source electrode film transistor 25 are connected to line scan signals source 16, and adjust
Economize on electricity pole 251 is connected to Regulate signal source 18.
Those skilled in the art understands the concrete structure and operation principle of double source electrode film transistor, its
A kind of middle typical structure is：Include grid, substrate, insulating barrier and conductivity channel layer from bottom to up successively,
And the source electrode in conductivity channel layer, drain electrode and regulation electrode, adjust electrode and be located at source electrode and leakage
Between pole.According to the transfer characteristic curve of double source electrode film transistor：Electrode is adjusted by changing
Magnitude of voltage i.e. be capable of achieving change double source electrode film transistor cut-in voltage.
Below in conjunction with Regulate signal source 18 voltage-regulation process come describe the present invention operation principle.
From the grid of double source electrode film transistor 25 is applied in the initial time of back bias voltage, work as drain-source
Electric current is firing current IONWhen, its gate source voltage is cut-in voltage VSET.It is brilliant in double source very thin films
Body pipe 25 repeats following process in negative bias pressure condition：
By the gate source voltage of double source electrode film transistor 25 from minus 10 volt linear increases, when its drain-source electricity
Stream is equal to firing current IONWhen, record gate source voltage V nowON, Regulate signal source 18 is given at once
Adjust electrode 251 and regulation voltage V is providedM(which is equal to VSET-VON).So that double source film crystal
The cut-in voltage of pipe 25 comes back to VSET, reduce institute's band over time so as to counteract cut-in voltage
The impact for coming, it is ensured that the prolonged stable operation of drive circuit.
As the cut-in voltage of thin film transistor (TFT) is gradually reduced with the increase of back bias voltage time is applied, leak
Ource electric current is equal to firing current IONWhen corresponding gate source voltage VONAlso it is gradually reduced, therefore adjusts
Voltage VMGradually increase.
Used as being contrasted with Fig. 2, we choose double source electrode film transistor 25 respectively in bias
Between for 0 second, 100 seconds, 300 seconds, 500 seconds, 1000 seconds, 3000 seconds and 5000 seconds when, adjust
Electrode 251 is provided regulation voltage VMThe transfer characteristic curve tested afterwards.As shown in figure 4, seven
Bar transfer characteristic curve is substantially coincident, and the cut-in voltage of double source electrode film transistor 25 is constant or base
This is constant.According to the voltage signal that Regulate signal source 18 provides so that double source electrode film transistor 25
Cut-in voltage stably remain VSET, it is ensured that drive circuit long-time stable works, final to cause to send out
The brightness stability of the light that optical diode 13 sends.Intrinsic spy in integrated circuit technology, to material
Property, doping process and surface and interface quality, and the repeatability and stability of technique have no harshness
Requirement, be conducive to commercially producing.
Fig. 5 is the cut-in voltage curve of deviation obtained according to the transfer characteristic curve of Fig. 2 and Fig. 4, is opened
Open the cut-in voltage of cut-in voltage when voltage deviation is 0 second equal to the bias time and other moment
Difference.Its medium and small square dot shows the cut-in voltage curve of deviation of thin film transistor (TFT) 15, with inclined
The pressure time increased to from 0 second 5000 seconds, the cut-in voltage side-play amount of thin film transistor (TFT) 15 from 0 volt by
Cumulative to be added to about 2.2 volts, i.e. the cut-in voltage of thin film transistor (TFT) 15 is gradually reduced.Dot shows
The cut-in voltage curve of deviation of double source electrode film transistor 25, the cut-in voltage with thin film transistor (TFT) 15
Side-play amount is compared, and the cut-in voltage side-play amount of double source electrode film transistor 25 is greatly reduced, and substantially
Equal to zero.
Fig. 6 is the circuit diagram of the film crystal tube drive circuit 30 according to second embodiment of the invention.
Which is essentially identical with Fig. 3, and difference is that film crystal tube drive circuit 30 also includes being connected to electricity
Resistance 11 between the drain electrode of source V and thin film transistor (TFT) 12.Resistance 11 can effective protection go here and there with which
The light emitting diode 13 of connection is damaged because of overcurrent.
In other embodiments of the invention, can also using double-gate film transistor replace Fig. 3,6
In double source electrode film transistor 25.Wherein double source electrode film transistor 25 positioned at source electrode and drain electrode
Between top-gated electrode be connected to Regulate signal source 18 as adjusting.Double-gate film transistor is opened
The Principles of Regulation for opening voltage are based on metal-insulator semiconductor (MIS) capacitor principle.Negative
Under bias state, the voltage signal V that Regulate signal source 18 providesM=(VON-VSET)C1/C2, wherein
C1It is the capacitance of the capacitor that the-the first insulating barrier of bottom gate-raceway groove is formed, C2Be the-the second insulating barrier of top-gated-
The capacitance of the capacitor that raceway groove is formed, C1And C2Capacitance-voltage measurement (C-V tests) can be passed through
Obtain, it is also possible to be calculated according to plate condenser formula.
In other embodiments of the invention, resistance 11, thin film transistor (TFT) 12 and light emitting diode 13
Can be connected in series between power supply V and reference ground G with random order.
Although the present invention has been described by means of preferred embodiments, but the present invention is not limited to
Embodiment as described herein, also includes done various without departing from the present invention
Change and change.
Claims (8)
1. a kind of film crystal tube drive circuit, it is characterised in that include：
The thin film transistor (TFT) and light-emitting component of series connection；
The charge storage cell being connected between the grid of the thin film transistor (TFT) and drain electrode；And
Cut-in voltage adjustable thin film transistor, its source electrode, drain electrode, grid and regulation electrode connect respectively
Grid, column scan signal source, line scan signals source and Regulate signal source to the thin film transistor (TFT).
2. film crystal tube drive circuit according to claim 1, it is characterised in that described
Thin film transistor (TFT) and light-emitting component are sequentially connected in series between power supply and reference ground.
3. film crystal tube drive circuit according to claim 2, it is characterised in that described
Film crystal tube drive circuit also includes the resistance with the thin film transistor (TFT) and light emitting elements in series.
4. film crystal tube drive circuit according to claim 3, it is characterised in that described
Resistance is connected between the drain electrode of the power supply and the thin film transistor (TFT).
5. film crystal tube drive circuit according to any one of claim 1 to 4, which is special
Levy and be, the cut-in voltage adjustable thin film transistor is double source electrode film transistor.
6. film crystal tube drive circuit according to any one of claim 1 to 4, which is special
Levy and be, the cut-in voltage adjustable thin film transistor be double-gate film transistor, the bigrid
The top-gated between its source electrode and drain electrode of thin film transistor (TFT) is used as the regulation electrode.
7. film crystal tube drive circuit according to any one of claim 1 to 4, which is special
Levy and be, the light-emitting component is light emitting diode.
8. film crystal tube drive circuit according to any one of claim 1 to 4, which is special
Levy and be, the charge storage cell is electric capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510590404.5A CN106558280B (en) | 2015-09-16 | 2015-09-16 | Thin film transistor driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510590404.5A CN106558280B (en) | 2015-09-16 | 2015-09-16 | Thin film transistor driving circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106558280A true CN106558280A (en) | 2017-04-05 |
| CN106558280B CN106558280B (en) | 2020-11-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510590404.5A Active CN106558280B (en) | 2015-09-16 | 2015-09-16 | Thin film transistor driving circuit |
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| Country | Link |
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| CN (1) | CN106558280B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107680536A (en) * | 2017-10-26 | 2018-02-09 | 京东方科技集团股份有限公司 | Image element circuit, its driving method and organic electroluminescence display panel, display device |
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| US20060066512A1 (en) * | 2004-09-28 | 2006-03-30 | Sharp Laboratories Of America, Inc. | Dual-gate transistor display |
| CN102074186A (en) * | 2009-11-24 | 2011-05-25 | 索尼公司 | Display apparatus, method of driving the display device, and electronic device |
| US20110273419A1 (en) * | 2010-05-10 | 2011-11-10 | Dong-Wook Park | Pixel circuit of a flat panel display device and method of driving the same |
| US20120249510A1 (en) * | 2011-03-29 | 2012-10-04 | Jankovic Nebojsa D | Method and circuit for compensating pixel drift in active matrix displays |
| CN102890910A (en) * | 2012-10-15 | 2013-01-23 | 北京大学 | Synchronous and asynchronous bi-gate thin film transistor (TFT)-organic light emitting diode (OLED) pixel drive circuit and drive method thereof |
| CN104732927A (en) * | 2015-04-09 | 2015-06-24 | 京东方科技集团股份有限公司 | Pixel circuit, drive method thereof and display device |
| CN205080864U (en) * | 2015-09-16 | 2016-03-09 | 中国科学院物理研究所 | Thin film transistor drive circuit |
-
2015
- 2015-09-16 CN CN201510590404.5A patent/CN106558280B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060066512A1 (en) * | 2004-09-28 | 2006-03-30 | Sharp Laboratories Of America, Inc. | Dual-gate transistor display |
| CN102074186A (en) * | 2009-11-24 | 2011-05-25 | 索尼公司 | Display apparatus, method of driving the display device, and electronic device |
| US20110273419A1 (en) * | 2010-05-10 | 2011-11-10 | Dong-Wook Park | Pixel circuit of a flat panel display device and method of driving the same |
| KR20110123984A (en) * | 2010-05-10 | 2011-11-16 | 삼성모바일디스플레이주식회사 | Pixel circuit of a flat panel display device and method of driving the same |
| US20120249510A1 (en) * | 2011-03-29 | 2012-10-04 | Jankovic Nebojsa D | Method and circuit for compensating pixel drift in active matrix displays |
| CN102890910A (en) * | 2012-10-15 | 2013-01-23 | 北京大学 | Synchronous and asynchronous bi-gate thin film transistor (TFT)-organic light emitting diode (OLED) pixel drive circuit and drive method thereof |
| CN104732927A (en) * | 2015-04-09 | 2015-06-24 | 京东方科技集团股份有限公司 | Pixel circuit, drive method thereof and display device |
| CN205080864U (en) * | 2015-09-16 | 2016-03-09 | 中国科学院物理研究所 | Thin film transistor drive circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107680536A (en) * | 2017-10-26 | 2018-02-09 | 京东方科技集团股份有限公司 | Image element circuit, its driving method and organic electroluminescence display panel, display device |
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| Publication number | Publication date |
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| CN106558280B (en) | 2020-11-10 |
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