CN106554626A - A kind of high heat conduction Graphene compound interface material and preparation method thereof - Google Patents
A kind of high heat conduction Graphene compound interface material and preparation method thereof Download PDFInfo
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Abstract
The present invention provides a kind of high heat conduction Graphene compound interface material, including organosilicon polymer, conduction powder, graphene powder and auxiliary agent, and the conduction powder includes spherical conduction powder and polyhedron conduction powder.Present invention simultaneously provides a kind of preparation method of polyhedron high heat conduction Graphene compound interface material, by above-mentioned raw materials are carried out mixed processing calendering process, is obtained high heat conduction Graphene compound interface material.The present invention increases the contact surface of each material using polyhedron conduction powder and addition Graphene, form effective heat conduction network structure, so as to increase passage of heat, improve radiating efficiency, so as to improve the heat conductivility of material, the high heat conduction Graphene compound interface material conducts heat rate of preparation is up to 7.5-9.5W/mK, while the addition by controlling Graphene, the high heat conduction Graphene compound interface material of preparation has certain insulating properties, and volume resistance is 1010-1013Ω·cm。
Description
Technical field
The present invention relates to a kind of new high heat conduction Graphene compound interface material and preparation method thereof, belongs to heat conduction material
Material field.
Background technology
Radiating is always the work of one primary study of electronics industry, and the actual work temperature of electronic devices and components is shadow
Ring one of key factor of its reliability.As electronic equipment develops towards miniaturization, high power consumption, its power consumption is close
Degree is stepped up.The caloric value of electronic equipment is also multiplied, and this also proposes higher to the heat dispersion of system
Requirement.
Heat-conducting interface material is the critical component of cooling system, is to connect the heat transfer between chip and radiator
Bridge.According to Heat Conduction Material filler and the difference of production technology, the thermal conductivity of heat-conducting interface material is also presented
Go out larger difference.Differ primarily in that：The selection of powder body type, including shapes and sizes；The selection of glue system,
Organosilicon, epoxy, acrylic acid etc.；Selection of dispersing aid etc..
Can have as the material of the heat filling of heat-conducting interface material：Metal-oxide such as Al2O3、ZnO、
MgO etc.；Metal nitride such as AlN, BN；Graphite；Ceramic-like powder body etc..
The production technology of heat-conducting interface material mainly has powder body pre-treatment, powder body silica gel collective stirring and evenly mixing, silica gel
System vulcanizes, cuts packaging etc..At present heat-conducting interface material its thermal conductivity of large-scale use exists mostly
Below 5W/mK, under existing powder body system and manufacturing condition, its thermal conductivity has been difficult to larger carrying
Rise.
Graphene is a kind of two-dimentional material with carbon element, is the general designation of single-layer graphene, bilayer graphene and few layer graphene,
The dependence that was reported since 2004 first is just greatly paid close attention to.Graphene has excellent heat conductivility,
The theoretical conductivity of single-layer graphene, in more than 5500W/mK, is the number of the Heat Conduction Material for being currently known best
Ten times.Graphene prepares high heat conduction boundary material as heat-conducting interface material conductive filler system and is subject to more and more
Concern.
The content of the invention
A kind of deficiency of the present invention for existing heat-conducting interface material technology, there is provided high heat conduction Graphene compound interface
Material and preparation method thereof, using the excellent heat conduction of Graphene and the super performance such as soft, prepare thermal conductivity it is high,
The good high heat conduction Graphene compound interface material of compressibility and mechanical strength.
One aspect of the present invention provides a kind of high heat conduction Graphene compound interface material, including organosilicon polymer, leads
Hot powder body, graphene powder and auxiliary agent, wherein the conduction powder includes spherical conduction powder and polyhedron heat conduction
Powder body.
Wherein, the weight of the spherical conduction powder and polyhedron conduction powder is spherical conduction powder
75-90, polyhedron conduction powder 1-5.
Particularly, the organosilicon polymer, spherical conduction powder, polyhedron conduction powder, graphene powder
It is organosilicon polymer 5-10 with the weight of auxiliary agent, spherical conduction powder 70-90, polyhedron conductive powder
Body 1-5, Graphene 1-5, auxiliary agent 0.5-2.
Wherein, the organosilicon polymer is vinyl polysiloxane, benzene thiazolinyl polysiloxanes, methylbenzene olefin(e) acid
One or more in siloxanes, methylvinyl-polysiloxane.
Particularly, the glue system viscosity of the organosilicon polymer is 300-1000mPas.
Wherein, the conduction powder is one or more in aluminium oxide, aluminium nitride, Zinc Oxide and boron nitride.
Particularly, the medium particle diameter D50 of the spherical conduction powder is 0.2-100 μm.
Especially, the polyhedron conduction powder is hexahedron or octahedra or dodecahedron.
Especially, the medium particle diameter D50 of the polyhedron conduction powder is 0.2-1.0 μm.
Wherein, the graphene powder is graphene sheet layer powder body.
Particularly, the thickness of the graphene sheet layer powder body is 2-10nm, and lamella length is 3-50 μm, loose shape
Density is 0.13-0.20g/cm3, metal ion content ＜ 1000ppm.
Graphene specific surface area is huge, light weight, and a small amount of addition Graphene just can form certain effective net
Network structure, is obviously improved the heat conductivility of heat-conducting interface material.Simultaneously because Graphene is very soft, add graphite
After alkene, heat-conducting interface material hardness and compression performance will not receive considerable influence.
Wherein, the auxiliary agent includes coupling agent and dispersant.
Particularly, the coupling agent be silane coupler, titanate coupling agent, the one kind in aluminate coupling agent
Or it is several.
The addition of coupling agent can strengthen the adhesion between conduction powder and colloid.
Especially, the dispersant is Polyethylene Glycol.
Particularly, the dispersant be polyethylene glycol 200 and PEG400 in one or two.
Dispersant add can preferably in dispersion colloid powder body.
Another aspect of the present invention provides a kind of preparation method of high heat conduction compound interface material, including：
Organosilicon polymer, conduction powder, graphene powder and auxiliary agent are carried out into mixed processing, mixture is obtained；
Calendering process is carried out to the mixture, the high heat conduction compound interface material is obtained；
Wherein, the conduction powder includes spherical conduction powder and polyhedron conduction powder.
Wherein, it is described that organosilicon polymer, conduction powder, graphene powder and auxiliary agent are carried out into mixed processing
Including：
Gather with organosilicon after process is dried to spherical conduction powder, polyhedron conduction powder and graphene powder
Compound mix homogeneously, is obtained the first compound；
Auxiliary agent is added in first compound, dried after mix homogeneously, is carried out, the second compound is obtained；
Vacuum stirring process is carried out to second compound, gas therein is sloughed, mixture is obtained.
Wherein, the weight of the spherical conduction powder and polyhedron conduction powder is spherical conduction powder
75-90, polyhedron conduction powder 1-5.
Particularly, the weight of the organosilicon polymer, spherical conduction powder, polyhedron conduction powder and auxiliary agent
Part proportioning is organosilicon polymer 5-10, spherical conduction powder 70-90, polyhedron conduction powder 1-5, auxiliary agent
0.5-2。
Wherein, the organosilicon polymer is vinyl polysiloxane, benzene thiazolinyl polysiloxanes, methylbenzene olefin(e) acid
One or more in siloxanes, methylvinyl-polysiloxane.
Particularly, the glue system viscosity of the organosilicon polymer is 300-1000mPas.
Wherein, the conduction powder is one or more in aluminium oxide, aluminium nitride, Zinc Oxide and boron nitride.
Particularly, the medium particle diameter D50 of the spherical conduction powder is 0.2-100 μm.
Especially, the polyhedron conduction powder is hexahedron or octahedra or dodecahedron.
Especially, the medium particle diameter D50 of the polyhedron conduction powder is 0.2-1.0 μm.
Wherein, the graphene powder is graphene sheet layer powder body.
Particularly, the thickness of the graphene sheet layer powder body is 2-10nm, and lamella length is 3-50 μm, loose shape
Density is 0.13-0.20g/cm3, metal ion content ＜ 1000ppm.
Wherein, described that auxiliary agent is added first compound, dried is carried out after mix homogeneously to be included：
By coupling agent and dispersant, stir, compounding agent solution is obtained；
The compounding agent solution is added in first compound, is stirred, the second mixing is obtained and just expects；
To the described second mixing, just material is dried process, and the second compound is obtained.
Wherein, the auxiliary agent includes coupling agent and dispersant.
Particularly, the coupling agent be silane coupler, titanate coupling agent, the one kind in aluminate coupling agent
Or it is several.
Especially, the dispersant is Polyethylene Glycol.
Particularly, the dispersant be polyethylene glycol 200 and PEG400 in one or two.
Wherein, it is withering to the spherical conduction powder, polyhedron conduction powder and graphene powder
Treatment temperature is 90-110 DEG C, and process time is 20-60min.
Particularly, by spherical conduction powder, polyhedron conduction powder, graphene powder and organosilicon polymer,
The mixing speed of mix homogeneously is 30-60r/min, and mixing time is 20-60min.
Especially, by the mixing speed that the auxiliary agent and the first compound mix homogeneously are obtained the first material of the second mixing it is
30-100r/min, mixing time are 10-60min.
Particularly, to prepared second mixing, just the withering treatment temperature of material is 90-110 DEG C, is located
The reason time is 20-60min.
Especially, the mixing speed that vacuum stirring process is carried out to second compound is 60-120r/min,
Mixing time is 20-40min, and treatment temperature is 80-130 DEG C.
Particularly, the treatment temperature of the calendering process is 80-130 DEG C.
Especially, Jing after calendering process, high heat conduction compound interface material of the thickness for 0.5-3mm is obtained.
Advantages of the present invention and Advantageous Effects are as follows：
1st, the present invention coordinates polyhedron conduction powder using the excellent heat conduction of Graphene and ultra-flexible energy,
Prepare that thermal conductivity is high, the high heat conduction Graphene compound interface material that compressibility and mechanical strength properties are good
Material, high heat conduction Graphene compound interface material property of the present invention are excellent, and thermal conductivity is high, up to 7.5-9.5W/mK.
2nd, high heat conduction Graphene compound interface material of the present invention adopts Graphene as raw material, Graphene specific surface
Product is big, light weight, is uniformly dispersed in the material, multi-layer oriented arrangement, and a small amount of addition can just form certain effective
Heat conduction network structure, significantly improves the heat conductivility of heat-conducting interface material.
3rd, high heat conduction Graphene compound interface material of the present invention is utilized using polyhedron conduction powder as raw material
Increasing the contact surface of each material, formation can be effectively increased the network structure of heat conduction to polyhedron conduction powder, from
And increasing passage of heat so that the thermal conductivity of heat-conducting interface material is significantly lifted.
4th, high heat conduction Graphene compound interface material of the present invention addition coupling agent and dispersant, silane coupler and
Dispersant can improve infiltration degree of the powder in silica gel system, increase the loading of powder body, improve powder body
Degree of scatter.
5th, in addition to Graphene, remaining is insulation material to the raw material of high heat conduction Graphene compound interface material of the present invention
Material, by the addition for controlling Graphene, to control the breakdown voltage resistant performance of heat-conducting interface material, can obtain
To the material required with certain insulating properties, electronic applications are highly suitable to be applied for.
6th, addition of the present invention by control Graphene, the high heat conduction Graphene compound interface material tool of preparation
There are certain insulating properties, volume resistance is 1010—1013Ω·cm。
7th, the preparation method process is simple of high heat conduction Graphene compound interface material of the present invention, easy to operate, former
Material is easy to get, and is especially suitable for and large-scale industrial production.
Description of the drawings
Fig. 1 is spherical conduction powder electron microscope；
Fig. 2 is spherical conduction powder thermal conductive contact model schematic；
Fig. 3 is polyhedron conduction powder electron microscope；
Fig. 4 is the thermal conductive contact model schematic containing polyhedron conduction powder；
Fig. 5 is graphene sheet layer powder body electron microscope；
Fig. 6 is that the Heat Conduction Material contact model filled with graphene powder jointly containing polyhedron conduction powder is shown
It is intended to；
Description of reference numerals：1st, silica gel matrix；2nd, spherical conduction powder；3rd, polyhedron conduction powder；4、
Graphene sheet layer.
Specific embodiment
The invention will be further described with reference to the accompanying drawings and detailed description：
Embodiment 1
1st, prepare the first compound
By methylbenzene olefin(e) acid siloxanes, ball-aluminium oxide powder, spherical alumina zinc powder and polyhedron boron nitride powder
After 20min is dried at 110 DEG C in end, room temperature is cooled to；
Weigh dry vinyl polysiloxane 3g, methylbenzene olefin(e) acid siloxanes 2g, ball-aluminium oxide and spherical
(D50=3.0-100 μm, the mass ratio of ball-aluminium oxide and spherical alumina zinc is the mixed-powder 90g of Zinc Oxide
7:3), polyhedron boron nitride powder 1g (D50=0.4-1.0 μm), and graphene powder 0.5g (lamellar structure, it is thick
Spend for 2-10nm, lamella length is 3-50 μm) it is placed in blender, stir under the speed of 30r/min
60min, is obtained the first compound.
2nd, prepare the second compound
By aluminate coupling agent and polyethylene glycol 200 mixing and stirring, the auxiliary agent that concentration is obtained for 10g/L is molten
Liquid weighs 2.0g compounding agent solutions and is added in the first compound, and 20min is stirred under the speed of 60r/min, system
Obtain；To expect 60min to be dried at 90 DEG C at the beginning of second compound, be cooled to room temperature, be obtained
Second compound.
3rd, prepare mixture
Second compound is placed in planetary mixer carries out vacuum stirring process, the mixing speed of planetary mixer
For 120r/min, temperature is 80 DEG C, after stirring 20min, takes out, mixture is obtained.
4th, calendering process
Obtained mixture is placed in tri-roll press machine carries out calendering process, wherein the pressure of control tri-roll press machine
For 10psi, rolling temperature is 80 DEG C, and speed is 0.8m/min, controls thickness and wide cut, adjusts suitable tension,
High heat conduction compound interface material of the prepared thickness for 3.0mm.
Using the thermal conductivity of auspicious ridge LW9389 Instrument measurings high heat conduction compound interface material, measuring thermal conductivity is
7.5W/m·K.The specific insulation of the heat-conducting interface material that test is obtained is about 1013Ω cm, due to what is added
Graphene amount is less, it is difficult to form effective large network structure, and its heat conductivility lifts very little, and volume resistance
It is almost unchanged.
Embodiment 2
1st, prepare the first compound
By benzene thiazolinyl polysiloxanes, spherical alumina zinc powder, spherical boron nitride powder and polyhedron aluminium nitride powder
After 60min is dried at 90 DEG C, room temperature is cooled to；
Weigh dry vinyl polysiloxane 6g, benzene thiazolinyl polysiloxanes 4g, spherical alumina zinc and spherical nitrogen
(D50=0.2-50 μm, the mass ratio of spherical alumina zinc and spherical boron nitride is 6 to change the mixed-powder 70g of boron:4),
Polyhedron aluminium nitride powder 5g (D50=0.2-0.6 μm), (lamellar structure, thickness is graphene powder 1g
2-10nm, lamella length are 3-50 μm) it is placed in blender, 20min is stirred under the speed of 60r/min,
The first compound is obtained.
2nd, prepare the second compound
By titanate coupling agent and PEG400 mixing and stirring, the auxiliary agent that concentration is obtained for 10g/L is molten
Liquid；Weigh 0.5g compounding agent solutions to be added in the first compound, 60min is stirred under the speed of 30r/min,
It is obtained at the beginning of the second compound and expects；To expect 20min to be dried at 110 DEG C at the beginning of second compound, be cooled to room temperature,
The second compound is obtained.
3rd, prepare mixture
Second compound is placed in planetary mixer carries out vacuum stirring process, the mixing speed of planetary mixer
For 30r/min, temperature is 130 DEG C, after stirring 60min, takes out, mixture is obtained.
4th, calendering process
Obtained mixture is placed in tri-roll press machine carries out calendering process, wherein the pressure of control tri-roll press machine
For 10psi, rolling temperature is 130 DEG C, and speed is 1.4m/min, controls thickness and wide cut, suitable of adjustment
Power, is obtained high heat conduction compound interface material of the thickness for 2.0mm.
Using the thermal conductivity of auspicious ridge LW9389 Instrument measurings high heat conduction compound interface material, measuring thermal conductivity is
8.5W/m·K.The specific insulation of the heat-conducting interface material that test is obtained is about 1012Ω cm, add Graphene
After material, the heat-conducting interface material for preparing, its insulation characterisitic decrease.
Embodiment 3
1st, prepare the first compound
Ball-aluminium oxide powder, Spherical aluminum nitride powder, polyhedron alumina powder and graphene powder are existed
After 30min is dried at 100 DEG C, room temperature is cooled to；
Weigh the mixed-powder of methylvinyl-polysiloxane 8g, dry ball-aluminium oxide and spherical aluminum nitride
(D50=1-70 μm, the mass ratio of ball-aluminium oxide and spherical aluminum nitride is 7 to 80g:3), polyhedron alumina powder
Last 3g (D50=0.2-1.0 μm), (lamellar structure, thickness is 2-10nm to graphene powder 2g, lamella length
For 3-50 μm) it is placed in blender, 30min is stirred under the speed of 45r/min, the first compound is obtained.
2nd, prepare the second compound
By silane coupler and polyethylene glycol 200 mixing and stirring, compounding agent solution of the concentration for 10g/L is obtained；
Weigh 1.0g compounding agent solutions to be added in the first compound, 40min is stirred under the speed of 45r/min, be obtained
Expect at the beginning of second compound；To expect 40min to be dried at 100 DEG C at the beginning of second compound, be cooled to room temperature, be obtained
Second compound.
3rd, prepare mixture
Second compound is placed in planetary mixer carries out vacuum stirring process, the mixing speed of planetary mixer
For 80r/min, temperature is 100 DEG C, after stirring 40min, takes out, mixture is obtained.
4th, calendering process
Obtained mixture is placed in tri-roll press machine carries out calendering process, wherein the pressure of control tri-roll press machine
For 10psi, rolling temperature is 100 DEG C, and speed is 1.1m/min, controls thickness and wide cut, suitable of adjustment
Power, is obtained high heat conduction compound interface material of the thickness for 2.5mm.
Using the thermal conductivity of auspicious ridge LW9389 Instrument measurings high heat conduction compound interface material, measuring thermal conductivity is
9.5W/m·K.The specific insulation of the heat-conducting interface material that test is obtained is 1010Ω cm, so adding graphite
After alkene material, the heat-conducting interface material for preparing, its insulation characterisitic decrease.
Reference examples
1st, prepare the first compound
By methylbenzene olefin(e) acid siloxanes, ball-aluminium oxide powder, spherical alumina zinc powder and polyhedron boron nitride powder
After 20min is dried at 110 DEG C in end, room temperature is cooled to；
Weigh dry vinyl polysiloxane 3g, methylbenzene olefin(e) acid siloxanes 2g, ball-aluminium oxide and spherical
(D50=3.0-100 μm, the mass ratio of ball-aluminium oxide and spherical alumina zinc is the mixed-powder 90g of Zinc Oxide
7:3), polyhedron boron nitride powder 1g (D50=0.4-1.0 μm), is placed in blender, in the speed of 30r/min
The lower stirring 60min of degree, is obtained the first compound.
2nd, prepare the second compound
By aluminate coupling agent and polyethylene glycol 200 mixing and stirring, the auxiliary agent that concentration is obtained for 10g/L is molten
Liquid weighs 2.0g compounding agent solutions and is added in the first compound, and 20min is stirred under the speed of 60r/min, system
Obtain；To expect 60min to be dried at 90 DEG C at the beginning of second compound, be cooled to room temperature, be obtained
Second compound.
3rd, prepare mixture
Second compound is placed in planetary mixer carries out vacuum stirring process, the mixing speed of planetary mixer
For 120r/min, temperature is 80 DEG C, after stirring 20min, takes out, mixture is obtained.
4th, calendering process
Obtained mixture is placed in tri-roll press machine carries out calendering process, wherein the pressure of control tri-roll press machine
For 10psi, rolling temperature is 80 DEG C, and speed is 0.8m/min, controls thickness and wide cut, adjusts suitable tension,
High heat conduction compound interface material of the prepared thickness for 3.0mm.
Using the thermal conductivity of auspicious ridge LW9389 Instrument measurings high heat conduction compound interface material, measuring thermal conductivity is
7.0W/mK, the specific insulation for testing the heat-conducting interface material for obtaining are about 1013Ω·cm。
As can be seen that due to being not added with graphene powder in reference examples, obtained material conducts heat rate is minimum, is
7.0W/m·K；And high heat conduction compound interface material of the present invention increases heat conduction and leads to due to the addition of graphene powder
Road, defines heat conduction network structure so that the thermal conductivity of heat-conducting interface material is significantly lifted, and thermal conductivity can be high
Up to 7.5-9.5W/mK.
In sum, the filling of graphene powder has more contact effects and realizes more passages of heat, than
Higher heat conductivity is obtained on the basis of conventional powder.The present invention is using the excellent heat conduction of Graphene and super soft
Etc. performance, and coordinate polyhedron conduction powder, prepare high heat conductivity rate, compression and mechanical strength properties
Good high heat conduction Graphene compound interface material.The production technology of heat-conducting interface material is practical simultaneously.
Although above-mentioned elaborate to the present invention, the invention is not restricted to this, the technology people of the art
Member can be modified with principle of the invention, therefore, the various modifications that all principles according to the present invention are carried out
All should be understood to fall into protection scope of the present invention.
Claims (10)
1. a kind of high heat conduction Graphene compound interface material, it is characterised in that including organosilicon polymer, lead
Hot powder body, graphene powder and auxiliary agent, the conduction powder include spherical conduction powder and polyhedron conduction powder.
2. high heat conduction Graphene compound interface material according to claim 1, it is characterised in that described
The weight of spherical conduction powder and polyhedron conduction powder is spherical conduction powder 70-90, and polyhedron leads
Hot powder body 1-5.
3. high heat conduction Graphene compound interface material according to claim 1, it is characterised in that described
The weight portion of organosilicon polymer, spherical conduction powder, polyhedron conduction powder, graphene powder and auxiliary agent is matched somebody with somebody
Than for organosilicon polymer 5-10, spherical conduction powder 70-90, polyhedron conduction powder 1-5, Graphene 1-5,
Auxiliary agent 0.5-2.
4. high heat conduction Graphene compound interface material according to claim 3, it is characterised in that described
Polyhedron conduction powder is hexahedron or octahedra or dodecahedron.
5. high heat conduction Graphene compound interface material according to claim 3, it is characterised in that described
Auxiliary agent includes coupling agent and dispersant.
6. a kind of preparation method of high heat conduction Graphene compound interface material, it is characterised in that include：
Organosilicon polymer, conduction powder, graphene powder and auxiliary agent are carried out into mixed processing, mixture is obtained；
Calendering process is carried out to the mixture, the high heat conduction Graphene compound interface material is obtained；
Wherein, the conduction powder includes spherical conduction powder and polyhedron conduction powder.
7. preparation method as claimed in claim 6, it is characterised in that by organosilicon polymer, conductive powder
Body, Graphene and auxiliary agent carry out mixed processing to be included：
Gather with organosilicon after process is dried to spherical conduction powder, polyhedron conduction powder and graphene powder
Compound mix homogeneously, is obtained the first compound；
Auxiliary agent is added in first compound, dried after mix homogeneously, is carried out, the second compound is obtained；
Vacuum stirring process is carried out to second compound, gas therein is sloughed, mixture is obtained.
8. preparation method as claimed in claim 6, it is characterised in that the spherical conduction powder and multiaspect
The weight of body conduction powder be spherical conduction powder 75-90, polyhedron conduction powder 1-5.
9. preparation method as claimed in claim 7, it is characterised in that the organosilicon polymer, spherical
The weight of conduction powder, polyhedron conduction powder, graphene powder and auxiliary agent is organosilicon polymer
5-10, spherical conduction powder 70-90, polyhedron conduction powder 1-5, Graphene 1-5, auxiliary agent 0.5-2.
10. preparation method as claimed in claim 9, it is characterised in that the auxiliary agent include coupling agent and point
Powder.
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| CN107629463A (en) * | 2017-11-15 | 2018-01-26 | 郴州国盛新材科技有限公司 | A kind of ball-aluminium oxide/micro- swollen graphite composite heat-conducting silicone grease and preparation method thereof |
| CN109111740A (en) * | 2017-06-22 | 2019-01-01 | 佛山市南海区研毅电子科技有限公司 | A kind of high thermal conductivity graphene thermal solidity insulator interface material and preparation method thereof |
| CN110540706A (en) * | 2019-09-05 | 2019-12-06 | 上海阿莱德实业股份有限公司 | Preparation method of heat-conducting interface material |
| CN114940828A (en) * | 2022-06-30 | 2022-08-26 | 深圳市傲川科技有限公司 | Insulating high-thermal-conductivity film and preparation method thereof |
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