CN106552829B - A kind of processing method and system of titanium silk - Google Patents
A kind of processing method and system of titanium silk Download PDFInfo
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- CN106552829B CN106552829B CN201610973645.2A CN201610973645A CN106552829B CN 106552829 B CN106552829 B CN 106552829B CN 201610973645 A CN201610973645 A CN 201610973645A CN 106552829 B CN106552829 B CN 106552829B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
- B21C1/00—Manufacture of metal sheets, metal wire, metal rods, metal tubes by drawing
- B21C1/02—Drawing metal wire or like flexible metallic material by drawing machines or apparatus in which the drawing action is effected by drums
- B21C1/04—Drawing metal wire or like flexible metallic material by drawing machines or apparatus in which the drawing action is effected by drums with two or more dies operating in series
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- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D9/00—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor
- C21D9/52—Heat treatment, e.g. annealing, hardening, quenching or tempering, adapted for particular articles; Furnaces therefor for wires; for strips ; for rods of unlimited length
- C21D9/54—Furnaces for treating strips or wire
- C21D9/56—Continuous furnaces for strip or wire
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/02—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon
- C22F1/18—High-melting or refractory metals or alloys based thereon
- C22F1/183—High-melting or refractory metals or alloys based thereon of titanium or alloys based thereon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G1/00—Cleaning or pickling metallic material with solutions or molten salts
- C23G1/02—Cleaning or pickling metallic material with solutions or molten salts with acid solutions
- C23G1/10—Other heavy metals
- C23G1/106—Other heavy metals refractory metals
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Abstract
The invention discloses a kind of processing method and system of titanium silk, the processing method includes step：(1) pickling；(2) first time wire drawing；(3) second of wire drawing；(4) dehydrogenation is heat-treated；(5) anneal.Corresponding system of processing, including acid dip pickle, first time wire-drawing frame, second of wire-drawing frame, dehydrogenation annealing device and the annealing device being sequentially connected.The tensile strength of gained titanium silk of the invention is in more than 600MPa, and surface smoothness is good, and cleaning is good.
Description
Technical field
The present invention relates to a kind of processing method and system of titanium silk.Belong to materials processing technology field.
Background technology
Titanium is a kind of argenteous transition metal, has the features such as in light weight, intensity is high, resistance to corrosion is good, and it is changed
It is relatively stable to learn property, there is the advantageous property such as good high temperature resistant, low temperature resistant, anti-strong acid, anti-highly basic.
Titanium silk can be used for titanium eguipment welding, the raw material of titanium parts machining, two aspects is generally used for, first, conduct
Structural member is processed further making standard component, precision instrument structural member, suspension member, silk screen etc.；Second, it is largely used to titanium eguipment, aviation
The welding of spacecraft, war products, stationery sports goods manufacturing process；Third, the parts that ultrafine wire is directly used in control device are used for
Precision instrument structural member.Precision of the three kinds of above-mentioned purposes all to titanium silk, surface quality etc. have higher requirements.
The content of the invention
The purpose of the present invention is to overcome above-mentioned the deficiencies in the prior art, there is provided a kind of processing method of titanium silk.
Present invention also offers the system of processing corresponding to the processing method of above-mentioned titanium silk.
To achieve the above object, the present invention uses following technical proposals：
A kind of processing method of titanium silk, including step：
(1) the titanium blank that specification is 10~11mm of Φ is taken, prerinse is carried out using deionized water, is soaked in 50~70 DEG C
Acid solution carries out pickling, then rinses, dries；Wherein, acid solution is that 38w.t.% hydrochloric acid solution, 30w.t.% hydrobromic acid is molten
Liquid and 92w.t.% sulfuric acid solution are according to volume ratio 1：1：2 mixed preparings obtain；
(2) first time wire drawing：It is put into the first vacuum drying oven, vacuumizes, was heated to 900~1000 DEG C at 3~4 hours, then
Insulation 1~2 hour after naturally cool to room temperature, take out, then by the first roller die wire drawing machine, wire drawing obtain specification for Φ 5~
6mm titanium silk；
(3) second of wire drawing：It is put into the second vacuum drying oven, vacuumizes, was heated to 600~700 DEG C at 20~30 minutes, then
Insulation naturally cools to room temperature after 8~12 hours, takes out, by the second roller die wire drawing machine, it is 1~3mm of Φ that wire drawing, which obtains specification,
Titanium silk；
(4) dehydrogenation is heat-treated：Under vacuum, it is incubated after titanium silk being warming up into 400~450 DEG C with 5~10 DEG C/min
3~4 hours, 30~50 minutes are incubated after being then warming up to 500~550 DEG C with 12~15 DEG C/min, finally with 2~4 DEG C/minute
Clock is incubated 50~80 minutes after being warming up to 600~650 DEG C；
(5) anneal：In 10~4Pa of vacuum annealing furnace, 600~650 DEG C are heated to, is incubated 5~6 hours, is excluded
Air is simultaneously replaced with argon gas, is cooled to 120~150 DEG C, is produced.
Preferably, the titanium silk is pure titanium silk.
Preferably, deionized water temperature used in prerinse is 45~65 DEG C in step (1), using the side of flowing cleaning
Method, flow are 30~40m3/h。
Preferably, rinsing is to carry out spray rinsing using 50~60 DEG C of deionized water in step (1).
Preferably, the specific method of drying is in step (1), the hot blast of 80~110 DEG C of injection, so as to remained on surface
Liquid is dried.
Preferably, the processing that strips off the skin first is carried out before first time wire drawing in step (2), to remove the oxide layer of titanium blank surface,
It is 0.8~1.2mm to take off skin thickness.
Preferably, firing rate is 20~25 DEG C/h in step (5), and cooling velocity is 3~4 DEG C/h.
A kind of system of processing of titanium silk, including acid dip pickle, first time wire-drawing frame, second of wire drawing dress being sequentially connected
Put, dehydrogenation annealing device and annealing device, acid dip pickle include precleaning spout, descaling bath, potcher and the baking being sequentially connected
Dry equipment, first time wire-drawing frame include the first vacuum drying oven and the first roller die wire drawing machine being sequentially connected, second of wire-drawing frame
Including the second vacuum drying oven and the second roller die wire drawing machine being sequentially connected, dehydrogenation annealing device is the 3rd vacuum drying oven, annealing device
For annealing furnace.
Preferably, the precleaning spout includes an inlet and an outlet, and going of continuously flowing between inlet and outlet from
Sub- water.
Preferably, acid solution is filled in the descaling bath, is that 38w.t.% hydrochloric acid solution, 30w.t.% hydrobromic acid is molten
Liquid and 92w.t.% sulfuric acid solution are according to volume ratio 1：1：2 mixed preparings obtain.
Preferably, the sprinkling equipment of Air washer is respectively equipped with the top and bottom of the potcher.
Preferably, the drying plant is the continuous device for being blown 80~110 DEG C of hot blasts.
Beneficial effects of the present invention：
The processing technology of the present invention includes pickling, first time wire drawing, second of wire drawing, dehydrogenation heat treatment and annealing five
Individual step, acid pickling step can thoroughly wash the oxide skin of blank surface to the greatest extent, and not occur peracid phenomenon；Control is drawn twice
Silk, first carry out first time wire drawing at relatively high temperatures, after carry out second of wire drawing at somewhat lower temperatures, ensure wire drawing uniformity and
Preferable surface quality；Dehydrogenation heat treatment step first causes protium to be converted into free state from gap solid solution state, and start hydrogen can
Inverse alloying changes, and finally excludes the free state hydrogen atom of residual thoroughly, to reach preferable dehydrogenation effect, second of quick heating
Speed heating, third time heating slowly heating, passes through the control for the rhythm that heats up, it is ensured that thorough dehydrogenation, and in dehydrogenation process
In will not lose titanium silk mechanical property；Handled with reference to the specific process conditions of annealing, it is effectively anti-using argon gas as protective gas
Only aoxidized in annealing process.
The tensile strength of last gained titanium silk is in more than 600MPa, and surface smoothness is good, and cleaning is good.
Brief description of the drawings
Fig. 1 is a kind of system of processing structural representation of titanium silk of the present invention；
Wherein, 1 is acid dip pickle, and 2 be first time wire-drawing frame, and 3 be second of wire-drawing frame, and 4 be the 3rd vacuum drying oven, 5
It is precleaning spout for annealing furnace, 6,7 be descaling bath, and 8 be potcher, and 9 be drying plant, and 10 be the first vacuum drying oven, and 11 be first
Roller die wire drawing machine, 12 be the second vacuum drying oven, and 13 be the second roller die wire drawing machine.
Embodiment
The present invention will be further elaborated with reference to the accompanying drawings and examples, it should which explanation, the description below is only
It is to explain the present invention, its content is not defined.
Embodiment 1：
As shown in figure 1, a kind of processing method of titanium silk, including step：
(1) the titanium blank that specification is Φ 10mm is taken, carrying out prerinse using 45 DEG C of deionized waters, (flowing is cleaned, and flow is
30m3/ h), it is soaked in 50 DEG C of acid solution and carries out pickling, then carries out spray rinsing using 50 DEG C of deionized water, be then blown
80 DEG C of hot blast, so as to which the liquid of remained on surface is dried；Wherein, acid solution is by 38w.t.% hydrochloric acid solution, 30w.t.%
Hydrobromic acid solution and 92w.t.% sulfuric acid solution according to volume ratio 1：1：2 mixed preparings obtain；
(2) first time wire drawing：The processing that strips off the skin first is carried out, to remove the oxide layer of titanium blank surface, taking off skin thickness is
0.8mm；It is put into the first vacuum drying oven 10, vacuumizes afterwards, was heated to 900 DEG C at 3 hours, then be incubated natural cooling after 1 hour
To room temperature, take out, then by the first roller die wire drawing machine 11, wire drawing obtains the titanium silk that specification is Φ 5mm；
(3) second of wire drawing：It is put into the second vacuum drying oven 12, vacuumizes, 600 DEG C were heated at 20 minutes, then to be incubated 8 small
When after naturally cool to room temperature, take out, by the second roller die wire drawing machine 13, wire drawing obtain specification be Φ 1mm titanium silk；
(4) dehydrogenation is heat-treated：Under vacuum, 3 hours are incubated after titanium silk being warming up into 400 DEG C with 5 DEG C/min, so
30 minutes are incubated after being warming up to 500 DEG C afterwards with 12 DEG C/min, 50 minutes are incubated after being finally warming up to 600 DEG C with 2 DEG C/min；
(5) anneal：In vacuum 10Pa annealing furnace 5, it is heated to 600 DEG C (firing rate is 20 DEG C/h), insulation 5 is small
When, exclude air and replaced with argon gas, be cooled to 120 DEG C (cooling velocity is 3 DEG C/h), produce.
A kind of system of processing of titanium silk, including be sequentially connected acid dip pickle 1, first time wire-drawing frame 2, second of wire drawing
Device 3, dehydrogenation annealing device and annealing device, acid dip pickle 1 include the precleaning spout 6, descaling bath 7, rinsing being sequentially connected
Groove 8 and drying plant 9, first time wire-drawing frame 2 include the first vacuum drying oven 10 and the first roller die wire drawing machine 11 being sequentially connected, the
Secondary wire-drawing frame 3 includes the second vacuum drying oven 12 and the second roller die wire drawing machine 13 that are sequentially connected, and dehydrogenation annealing device is the
Three vacuum drying ovens 4, annealing device are annealing furnace 5.
Wherein, precleaning spout 6 includes an inlet and an outlet, and the deionized water continuously flowed between inlet and outlet；
Acid solution is filled in descaling bath 7, is by the sulfuric acid of 38w.t.% hydrochloric acid solution, 30w.t.% hydrobromic acid solution and 92w.t.%
Solution mixed preparing obtains；The top and bottom of potcher 8 are respectively equipped with the sprinkling equipment of Air washer；Drying plant 9
For the device of continuous blowing hot air.
Embodiment 2：
As shown in figure 1, a kind of processing method of titanium silk, including step：
(1) the titanium blank that specification is Φ 11mm is taken, carrying out prerinse using 65 DEG C of deionized waters, (flowing is cleaned, and flow is
40m3/ h), it is soaked in 70 DEG C of acid solution and carries out pickling, then carries out spray rinsing using 60 DEG C of deionized water, be then blown
110 DEG C of hot blast, so as to which the liquid of remained on surface is dried；Wherein, acid solution is by 38w.t.% hydrochloric acid solution, 30w.t.%
Hydrobromic acid solution and 92w.t.% sulfuric acid solution according to volume ratio 1：1：2 mixed preparings obtain；
(2) first time wire drawing：The processing that strips off the skin first is carried out, to remove the oxide layer of titanium blank surface, taking off skin thickness is
1.2mm；It is put into the first vacuum drying oven 10, vacuumizes afterwards, was heated to 1000 DEG C at 4 hours, then be incubated natural cooling after 2 hours
To room temperature, take out, then by the first roller die wire drawing machine 11, wire drawing obtains the titanium silk that specification is Φ 6mm；
(3) second of wire drawing：It is put into the second vacuum drying oven 12, vacuumizes, was heated to 700 DEG C at 30 minutes, then be incubated 12
Room temperature is naturally cooled to after hour, is taken out, by the second roller die wire drawing machine 13, wire drawing obtains the titanium silk that specification is Φ 3mm；
(4) dehydrogenation is heat-treated：Under vacuum, 4 hours are incubated after titanium silk being warming up into 450 DEG C with 10 DEG C/min, so
50 minutes are incubated after being warming up to 550 DEG C afterwards with 15 DEG C/min, 80 minutes are incubated after being finally warming up to 650 DEG C with 4 DEG C/min；
(5) anneal：In vacuum 4Pa annealing furnace 5, it is heated to 650 DEG C (firing rate is 25 DEG C/h), insulation 6 is small
When, exclude air and replaced with argon gas, be cooled to 150 DEG C (cooling velocity is 3~4 DEG C/h), produce.
A kind of system of processing of titanium silk, including be sequentially connected acid dip pickle 1, first time wire-drawing frame 2, second of wire drawing
Device 3, dehydrogenation annealing device and annealing device, acid dip pickle 1 include the precleaning spout 6, descaling bath 7, rinsing being sequentially connected
Groove 8 and drying plant 9, first time wire-drawing frame 2 include the first vacuum drying oven 10 and the first roller die wire drawing machine 11 being sequentially connected, the
Secondary wire-drawing frame 3 includes the second vacuum drying oven 12 and the second roller die wire drawing machine 13 that are sequentially connected, and dehydrogenation annealing device is the
Three vacuum drying ovens 4, annealing device are annealing furnace 5.
Wherein, precleaning spout 6 includes an inlet and an outlet, and the deionized water continuously flowed between inlet and outlet；
Acid solution is filled in descaling bath 7, is by the sulfuric acid of 38w.t.% hydrochloric acid solution, 30w.t.% hydrobromic acid solution and 92w.t.%
Solution mixed preparing obtains；The top and bottom of potcher 8 are respectively equipped with the sprinkling equipment of Air washer；Drying plant 9
For the device of continuous blowing hot air.
Embodiment 3：
As shown in figure 1, a kind of processing method of titanium silk, including step：
(1) the titanium blank that specification is Φ 10mm is taken, carrying out prerinse using 65 DEG C of deionized waters, (flowing is cleaned, and flow is
30m3/ h), it is soaked in 70 DEG C of acid solution and carries out pickling, then carries out spray rinsing using 50 DEG C of deionized water, be then blown
110 DEG C of hot blast, so as to which the liquid of remained on surface is dried；Wherein, acid solution is by 38w.t.% hydrochloric acid solution, 30w.t.%
Hydrobromic acid solution and 92w.t.% sulfuric acid solution according to volume ratio 1：1：2 mixed preparings obtain；
(2) first time wire drawing：The processing that strips off the skin first is carried out, to remove the oxide layer of titanium blank surface, taking off skin thickness is
0.8mm；It is put into the first vacuum drying oven 10, vacuumizes afterwards, was heated to 900 DEG C at 4 hours, then be incubated natural cooling after 2 hours
To room temperature, take out, then by the first roller die wire drawing machine 11, wire drawing obtains the titanium silk that specification is Φ 5mm；
(3) second of wire drawing：It is put into the second vacuum drying oven 12, vacuumizes, was heated to 600 DEG C at 30 minutes, then be incubated 12
Room temperature is naturally cooled to after hour, is taken out, by the second roller die wire drawing machine 13, wire drawing obtains the titanium silk that specification is Φ 1mm；
(4) dehydrogenation is heat-treated：Under vacuum, 4 hours are incubated after titanium silk being warming up into 400 DEG C with 10 DEG C/min, so
30 minutes are incubated after being warming up to 550 DEG C afterwards with 12 DEG C/min, 80 minutes are incubated after being finally warming up to 600 DEG C with 4 DEG C/min；
(5) anneal：In vacuum 10Pa annealing furnace 5, it is heated to 650 DEG C (firing rate is 20 DEG C/h), insulation 6 is small
When, exclude air and replaced with argon gas, be cooled to 120 DEG C (cooling velocity is 4 DEG C/h), produce.
A kind of system of processing of titanium silk, including be sequentially connected acid dip pickle 1, first time wire-drawing frame 2, second of wire drawing
Device 3, dehydrogenation annealing device and annealing device, acid dip pickle 1 include the precleaning spout 6, descaling bath 7, rinsing being sequentially connected
Groove 8 and drying plant 9, first time wire-drawing frame 2 include the first vacuum drying oven 10 and the first roller die wire drawing machine 11 being sequentially connected, the
Secondary wire-drawing frame 3 includes the second vacuum drying oven 12 and the second roller die wire drawing machine 13 that are sequentially connected, and dehydrogenation annealing device is the
Three vacuum drying ovens 4, annealing device are annealing furnace 5.
Wherein, precleaning spout 6 includes an inlet and an outlet, and the deionized water continuously flowed between inlet and outlet；
Acid solution is filled in descaling bath 7, is by the sulfuric acid of 38w.t.% hydrochloric acid solution, 30w.t.% hydrobromic acid solution and 92w.t.%
Solution mixed preparing obtains；The top and bottom of potcher 8 are respectively equipped with the sprinkling equipment of Air washer；Drying plant 9
For the device of continuous blowing hot air.
Embodiment 4：
As shown in figure 1, a kind of processing method of titanium silk, including step：
(1) the titanium blank that specification is Φ 11mm is taken, carrying out prerinse using 45 DEG C of deionized waters, (flowing is cleaned, and flow is
40m3/ h), it is soaked in 50 DEG C of acid solution and carries out pickling, then carries out spray rinsing using 60 DEG C of deionized water, be then blown
80 DEG C of hot blast, so as to which the liquid of remained on surface is dried；Wherein, acid solution is by 38w.t.% hydrochloric acid solution, 30w.t.%
Hydrobromic acid solution and 92w.t.% sulfuric acid solution according to volume ratio 1：1：2 mixed preparings obtain；
(2) first time wire drawing：The processing that strips off the skin first is carried out, to remove the oxide layer of titanium blank surface, taking off skin thickness is
1.2mm；It is put into the first vacuum drying oven 10, vacuumizes afterwards, was heated to 1000 DEG C at 3 hours, then be incubated natural cooling after 1 hour
To room temperature, take out, then by the first roller die wire drawing machine 11, wire drawing obtains the titanium silk that specification is Φ 6mm；
(3) second of wire drawing：It is put into the second vacuum drying oven 12, vacuumizes, 700 DEG C were heated at 20 minutes, then to be incubated 8 small
When after naturally cool to room temperature, take out, by the second roller die wire drawing machine 13, wire drawing obtain specification be Φ 3mm titanium silk；
(4) dehydrogenation is heat-treated：Under vacuum, 3 hours are incubated after titanium silk being warming up into 450 DEG C with 5 DEG C/min, so
30~50 minutes are incubated after being warming up to 500 DEG C afterwards with 15 DEG C/min, 80 points are incubated after being finally warming up to 600 DEG C with 4 DEG C/min
Clock；
(5) anneal：In vacuum 10Pa annealing furnace 5, it is heated to 650 DEG C (firing rate is 20 DEG C/h), insulation 6 is small
When, exclude air and replaced with argon gas, be cooled to 120 DEG C (cooling velocity is 4 DEG C/h), produce.
A kind of system of processing of titanium silk, including be sequentially connected acid dip pickle 1, first time wire-drawing frame 2, second of wire drawing
Device 3, dehydrogenation annealing device and annealing device, acid dip pickle 1 include the precleaning spout 6, descaling bath 7, rinsing being sequentially connected
Groove 8 and drying plant 9, first time wire-drawing frame 2 include the first vacuum drying oven 10 and the first roller die wire drawing machine 11 being sequentially connected, the
Secondary wire-drawing frame 3 includes the second vacuum drying oven 12 and the second roller die wire drawing machine 13 that are sequentially connected, and dehydrogenation annealing device is the
Three vacuum drying ovens 4, annealing device are annealing furnace 5.
Wherein, precleaning spout 6 includes an inlet and an outlet, and the deionized water continuously flowed between inlet and outlet；
Acid solution is filled in descaling bath 7, is by the sulfuric acid of 38w.t.% hydrochloric acid solution, 30w.t.% hydrobromic acid solution and 92w.t.%
Solution mixed preparing obtains；The top and bottom of potcher 8 are respectively equipped with the sprinkling equipment of Air washer；Drying plant 9
For the device of continuous blowing hot air.
Embodiment 5：
As shown in figure 1, a kind of processing method of titanium silk, including step：
(1) the titanium blank that specification is Φ 10mm is taken, carrying out prerinse using 55 DEG C of deionized waters, (flowing is cleaned, and flow is
35m3/ h), it is soaked in 60 DEG C of acid solution and carries out pickling, then carries out spray rinsing using 55 DEG C of deionized water, be then blown
100 DEG C of hot blast, so as to which the liquid of remained on surface is dried；Wherein, acid solution is by 38w.t.% hydrochloric acid solution, 30w.t.%
Hydrobromic acid solution and 92w.t.% sulfuric acid solution according to volume ratio 1：1：2 mixed preparings obtain；
(2) first time wire drawing：The processing that strips off the skin first is carried out, to remove the oxide layer of titanium blank surface, it is 1mm to take off skin thickness；
It is put into the first vacuum drying oven 10, vacuumizes afterwards, 950 DEG C were heated at 3 hours, then room temperature is naturally cooled to after being incubated 2 hours,
Take out, then by the first roller die wire drawing machine 11, wire drawing obtains the titanium silk that specification is Φ 5mm；
(3) second of wire drawing：It is put into the second vacuum drying oven 12, vacuumizes, was heated to 650 DEG C at 25 minutes, then be incubated 10
Room temperature is naturally cooled to after hour, is taken out, by the second roller die wire drawing machine 13, wire drawing obtains the titanium silk that specification is Φ 2mm；
(4) dehydrogenation is heat-treated：Under vacuum, 3 hours are incubated after titanium silk being warming up into 420 DEG C with 8 DEG C/min, so
40 minutes are incubated after being warming up to 520 DEG C afterwards with 13 DEG C/min, 70 minutes are incubated after being finally warming up to 620 DEG C with 3 DEG C/min；
(5) anneal：In vacuum 6Pa annealing furnace 5, it is heated to 620 DEG C (firing rate is 22 DEG C/h), insulation 5 is small
When, exclude air and replaced with argon gas, be cooled to 140 DEG C (cooling velocity is 3 DEG C/h), produce.
A kind of system of processing of titanium silk, including be sequentially connected acid dip pickle 1, first time wire-drawing frame 2, second of wire drawing
Device 3, dehydrogenation annealing device and annealing device, acid dip pickle 1 include the precleaning spout 6, descaling bath 7, rinsing being sequentially connected
Groove 8 and drying plant 9, first time wire-drawing frame 2 include the first vacuum drying oven 10 and the first roller die wire drawing machine 11 being sequentially connected, the
Secondary wire-drawing frame 3 includes the second vacuum drying oven 12 and the second roller die wire drawing machine 13 that are sequentially connected, and dehydrogenation annealing device is the
Three vacuum drying ovens 4, annealing device are annealing furnace 5.
Wherein, precleaning spout 6 includes an inlet and an outlet, and the deionized water continuously flowed between inlet and outlet；
Acid solution is filled in descaling bath 7, is by the sulfuric acid of 38w.t.% hydrochloric acid solution, 30w.t.% hydrobromic acid solution and 92w.t.%
Solution mixed preparing obtains；The top and bottom of potcher 8 are respectively equipped with the sprinkling equipment of Air washer；Drying plant 9
For the device of continuous blowing hot air.
Test example
Mechanics Performance Testing is carried out to the gained titanium silk of embodiment 1~5, tensile strength is in more than 600MPa；Then carry out
Surface roughness and cleaning test.
Surface roughness：Measure the arithmetic average roughness (Ra) and maximum height (Rz) of each experiment.Table is used in measurement
Surface roughness shape measuring instrument (the Off U system 1400D of Tokyo precision society サ mono-), according to JIS B 0601：2001 method is carried out
Measurement.
Cleaning：Each test body is cut to obtain length 2cm test body, carries out acetone cleaning, after carrying out quality determination,
In the surface of each test body coating kinetic viscosity 34mm2/ s (40 DEG C of temperature) 25 μ L of extruding oil.Then, stirred and heated with agitator
To 70 DEG C of pure water 2L, wherein impregnating each test body 3 minutes and taking out.Thereafter, dry each test body, quality measurement, according to
With the difference of the quality before extruding oil coating, the oil amount of residual is evaluated, residual oil is in 0.5mg/cm2It is good for cleaning when following
It is good, more than 0.5mg/cm2When for cleaning it is poor.Test result is shown in Table 1.
The surface state performance of table 1.
It can be obtained from table 1, titanium silk surface smoothness of the invention is good, and cleaning is good.
Although above-mentioned the embodiment of the present invention is described with reference to accompanying drawing, model not is protected to the present invention
The limitation enclosed, on the basis of technical scheme, those skilled in the art need not pay creative work and can do
The various modifications or deformation gone out are still within protection scope of the present invention.
Claims (9)
1. a kind of processing method of titanium silk, it is characterised in that including step：
(1) the titanium blank that specification is 10~11mm of Φ is taken, prerinse is carried out using deionized water, is soaked in 50~70 DEG C of acid solution
Pickling is carried out, then rinses, dry；Wherein, acid solution be by 38w.t.% hydrochloric acid solution, 30w.t.% hydrobromic acid solution and
92w.t.% sulfuric acid solution is according to volume ratio 1：1：2 mixed preparings obtain；
(2) first time wire drawing：It is put into the first vacuum drying oven, vacuumizes, was heated to 900~1000 DEG C at 3~4 hours, then be incubated 1
Room temperature is naturally cooled to after~2 hours, is taken out, then by the first roller die wire drawing machine, it is 5~6mm's of Φ that wire drawing, which obtains specification,
Titanium silk；
(3) second of wire drawing：It is put into the second vacuum drying oven, vacuumizes, was heated to 600~700 DEG C at 20~30 minutes, then be incubated
Room temperature is naturally cooled to after 8~12 hours, is taken out, by the second roller die wire drawing machine, wire drawing obtains the titanium that specification is 1~3mm of Φ
Silk；
(4) dehydrogenation is heat-treated：Under vacuum, 3~4 are incubated after titanium silk being warming up into 400~450 DEG C with 5~10 DEG C/min
Hour, 30~50 minutes are incubated after being then warming up to 500~550 DEG C with 12~15 DEG C/min, is finally risen with 2~4 DEG C/min
50~80 minutes are incubated after warm to 600~650 DEG C；
(5) anneal：In 10~4Pa of vacuum annealing furnace, 600~650 DEG C are heated to, is incubated 5~6 hours, excludes air
And replaced with argon gas, 120~150 DEG C are cooled to, is produced.
2. the processing method of a kind of titanium silk according to claim 1, it is characterised in that prerinse is used in step (1)
Deionized water temperature be 45~65 DEG C, using flowing cleaning method, flow is 30~40m3/h；Rinsing is to use 50~60
DEG C deionized water carry out spray rinsing；The specific method of drying is the hot blast of 80~110 DEG C of injection, so as to remained on surface
Liquid drying.
A kind of 3. processing method of titanium silk according to claim 1, it is characterised in that in step (2) before first time wire drawing,
The processing that strips off the skin first is carried out, to remove the oxide layer of titanium blank surface, it is 0.8~1.2mm to take off skin thickness.
4. the processing method of a kind of titanium silk according to claim 1, it is characterised in that firing rate is 20 in step (5)
~25 DEG C/h, cooling velocity is 3~4 DEG C/h.
5. system of processing corresponding to a kind of processing method of titanium silk according to any one of claims 1 to 4, it is characterised in that
Including acid dip pickle, first time wire-drawing frame, second of wire-drawing frame, dehydrogenation annealing device and the annealing dress being sequentially connected
Put, acid dip pickle includes precleaning spout, descaling bath, potcher and the drying plant being sequentially connected, and first time wire-drawing frame includes
The first vacuum drying oven and the first roller die wire drawing machine being sequentially connected, second wire-drawing frame include the second vacuum drying oven being sequentially connected and
Second roller die wire drawing machine, dehydrogenation annealing device are the 3rd vacuum drying oven, and annealing device is annealing furnace.
6. system of processing according to claim 5, it is characterised in that the precleaning spout includes an inlet and an outlet, and
The deionized water continuously flowed between inlet and outlet.
7. system of processing according to claim 5, it is characterised in that fill acid solution in the descaling bath, be by
The sulfuric acid solution of 38w.t.% hydrochloric acid solution, 30w.t.% hydrobromic acid solution and 92w.t.% is according to volume ratio 1：1：2 is mixed
Preparation is closed to obtain.
8. system of processing according to claim 5, it is characterised in that spray is respectively equipped with the top and bottom of the potcher
Drench the sprinkling equipment of deionized water.
9. system of processing according to claim 5, it is characterised in that the drying plant is continuous 80~110 DEG C of injection
The device of hot blast.
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| CN112296120B (en) * | 2020-10-30 | 2022-08-05 | 西安圣泰金属材料有限公司 | Processing method of high-strength TC4 titanium alloy ultrafine grain wire for medical treatment, wire manufactured by applying method and Kirschner wire |
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Effective date of registration: 20220114 Address after: 710000 No. 28, Lingfei Road, National Aviation high tech industrial base, Xi'an, Shaanxi Province Patentee after: Xi'an Cohen titanium New Material Technology Co.,Ltd. Address before: 330096 room 223, building 1, science and Technology Park, Nanchang University, Nanchang high tech Industrial Development Zone, Nanchang, Jiangxi 589 Patentee before: NANCHANG ZHUANTENG TECHNOLOGY CO.,LTD. |