CN106549107B - Two-way HEMT device of N-type based on CH3NH3PbI3 material and preparation method thereof - Google Patents

Two-way HEMT device of N-type based on CH3NH3PbI3 material and preparation method thereof Download PDF

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CN106549107B
CN106549107B CN201611125225.5A CN201611125225A CN106549107B CN 106549107 B CN106549107 B CN 106549107B CN 201611125225 A CN201611125225 A CN 201611125225A CN 106549107 B CN106549107 B CN 106549107B
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pbi
light absorbing
absorbing layer
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layer surface
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CN106549107A (en
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贾仁需
刘银涛
汪钰成
庞体强
张玉明
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Xidian University
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    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H—ELECTRICITY
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    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/60—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation in which radiation controls flow of current through the devices, e.g. photoresistors
    • H10K30/65—Light-sensitive field-effect devices, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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Abstract

The present invention relates to one kind to be based on CH3NH3PbI3Two-way HEMT device of the N-type of material and preparation method thereof.This method comprises: choosing substrate；Form FTO film；Prepare CH3NH3PbI3Material is to form the first light absorbing layer；The first electron transfer layer is formed on the first light absorbing layer surface；Source-drain electrode is formed in the first electron-transport layer surface；The the first electron-transport layer surface not covered in source-drain electrode and by source-drain electrode forms the second electron transfer layer；CH is prepared in the second electron-transport layer surface3NH3PbI3Material is to form the second light absorbing layer；Gate electrode is formed on the second light absorbing layer surface, ultimately forms two-way HEMT device.The present invention can absorb more light and generate photo-generated carrier by using symmetrical light absorbing layer, and can be irradiated to light absorbing layer using illumination up and down, as bottom gate electrode, is able to achieve in the transparent electro-conductive glass of transparent sapphire growth, and using by CH3NH3PbI3A large amount of electronics is provided to channel, improves mobility height, enhance transmission characteristic and increases photoelectric conversion efficiency.

Description

Based on CH3NH3PbI3Two-way HEMT device of the N-type of material and preparation method thereof
Technical field
The invention belongs to technical field of integrated circuits, and in particular to one kind is based on CH3NH3PbI3The N-type of material is two-way HEMT device and preparation method thereof.
Background technique
With flourishing for electronic technology, semiconductor integrated circuit gets over social development and national economy role Come bigger.And wherein demand of the market to photoelectricity high speed device is growing day by day, and constantly proposes to the performance of device higher thinner The requirement of cause.To seek to break through, regardless of from technique, the research of material or structure etc. does not have always interruption.In recent years, with The emergence of visible light wireless communication technique and circuit coupling technique, photoelectricity high electron mobility of the market to visible light wave range Crystal (High Electron Mobility Transistor, abbreviation HEMT) pipe is put forward new requirements.
Organic/inorganic perovskite (CH3NH3PbI3) be announced to the world splendidly, and to research bring new visual angle.Organic/inorganic The orderly combination of organic group and inorganic group in perovskite, has obtained the crystal structure of long-range order, and has had both organic And the advantages of inorganic material.The high mobility of inorganic component imparts the good electrology characteristic of hydridization perovskite；Organic component Self assembly and film forming characteristics so that the preparation process of hydridization perovskite thin film is simple and low cost, also can at room temperature into Row.The absorption coefficient of light of this height of hydridization perovskite is also the capital that hydridization perovskite can be applied in photoelectric material.
Traditional inorganic HEMT high electron mobility transistor is all to belong to the conversion of electric energy to electric energy, is not able to satisfy pair The demand of the photoelectricity high electron mobility transistor of visible light wave range.Therefore, how CH is utilized3NH3PbI3The characteristic of material is made Standby photoelectricity HEMT device just becomes of crucial importance.
Summary of the invention
In order to solve the above-mentioned problems in the prior art, the present invention provides one kind to be based on CH3NH3PbI3Material Two-way HEMT device of N-type and preparation method thereof.
An embodiment provides one kind to be based on CH3NH3PbI3The preparation of the two-way HEMT device of the N-type of material Method, comprising:
Choose substrate；
FTO film is formed in the substrate surface；
CH is prepared in the FTO film surface3NH3PbI3Material is to form the first light absorbing layer；
The first electron transfer layer is formed on first light absorbing layer surface；
Source electrode and drain electrode is formed in the first electron-transport layer surface；
In the source electrode, the drain electrode and first electronics not covered by the source electrode and the drain electrode It transmits layer surface and forms the second electron transfer layer；
CH is prepared in the second electron-transport layer surface3NH3PbI3Material is to form the second light absorbing layer；
Gate electrode is formed on second light absorbing layer surface, ultimately forms the two-way HEMT device.
In one embodiment of the invention, substrate is chosen, comprising:
Choose the Al with a thickness of 200 μm -600 μm2O3Material is as the substrate；Or
It chooses the Si material with a thickness of 200 μm -600 μm and forms thickness using thermal oxidation technology in the Si material surface For 1 μm of SiO2Material, with Si material and SiO2Material is integrally used as the substrate.
In one embodiment of the invention, FTO film is formed in the substrate surface, comprising:
Sediment is obtained after stirring is added into secondary distilled water in butyl titanate；
The sediment is added in the mixed liquor of secondary distilled water and concentrated nitric acid after stirring and is applied to the substrate surface To form the FTO film.
In one embodiment of the invention, CH is prepared in the FTO film surface3NH3PbI3Material is to form the first light Absorbed layer, comprising:
By PbI2And CH3NH3I is successively added in DMSO:GBL and stirs, and CH is formed after standing3NH3PbI3Solution；
Using single semar technique by the CH3NH3PbI3Solution is spin-coated on the FTO film surface and passes through annealing process Form first light absorbing layer.
In one embodiment of the invention, the first electron transfer layer is formed on first light absorbing layer surface, comprising:
Using TiO2As target, under the atmosphere of argon gas and oxygen, using magnetron sputtering technique, inhaled in first light It receives layer surface and makes TiO2Material is to form first electron transfer layer.
In one embodiment of the invention, source electrode and drain electrode, packet are formed in the first electron-transport layer surface It includes:
Using the first metal material as target, under an argon atmosphere, using magnetron sputtering technique, using the first mask plate First metal material is formed using as the source electrode and the drain electrode in the first electron-transport layer surface.
In one embodiment of the invention, in the source electrode, the drain electrode and not by the source electrode and described The first electron-transport layer surface of drain electrode covering forms the second electron transfer layer, comprising:
Using TiO2As target, under the atmosphere of argon gas and oxygen, using magnetron sputtering technique, the source electrode, The drain electrode and the first electron transfer layer surface deposition TiO not covered by the source electrode and the drain electrode2Material Material is to form second electron transfer layer.
In one embodiment of the invention, CH is prepared in the second electron-transport layer surface3NH3PbI3Material is with shape At the second light absorbing layer, comprising:
By PbI2And CH3NH3I is successively added in DMSO:GBL and stirs, and CH is formed after standing3NH3PbI3Solution；
Using single semar technique by the CH3NH3PbI3Solution is spin-coated on the second electron-transport layer surface and by moving back Fire process forms second light absorbing layer.
In one embodiment of the invention, gate electrode is formed on second light absorbing layer surface, comprising:
Using the second metal material as target, under an argon atmosphere, using magnetron sputtering technique, using the second mask plate Second metal material is formed using as the gate electrode on second light absorbing layer surface.
CH is based on another embodiment of the present invention provides a kind of3NH3PbI3The two-way HEMT device of the N-type of material, In, the two-way HEMT device is prepared by the method any in above-described embodiment and is formed.
The two-way HEMT device of the N-type of the embodiment of the present invention, at least has the advantages that compared with the existing technology
1, electronic blocking hole is transmitted using symmetrical electron transfer layer due to transistor of the invention, overcomes high electronics Electron-hole recombinations in mobility transistor, the low disadvantage of photoelectric conversion efficiency.
2, since transistor of the invention uses symmetrical light absorbing layer, more light can be absorbed and generate photo-generated carrier, Enhance device performance.
3, since transistor of the invention is used in the transparent electro-conductive glass FTO of transparent sapphire growth as bottom Gate electrode, light absorbing layer can be irradiated to by being able to achieve illumination up and down, enhance device performance.
4, electronic blocking hole is transmitted using symmetrical electron transfer layer due to transistor of the invention, can transmitted more Electronics enhances device performance.
5, transistor of the invention is used by CH3NH3PbI3A large amount of electronics is provided to channel, forms two-way HEMT high electricity Transport factor transistor has mobility high, and switching speed is fast, and light absorption enhancing, photo-generated carrier increases, and transmission characteristic increases By force, the big advantage of photoelectric conversion efficiency.
Detailed description of the invention
Fig. 1 is provided in an embodiment of the present invention a kind of based on CH3NH3PbI3The section of the two-way HEMT device of the N-type of material Schematic diagram；
Fig. 2 is provided in an embodiment of the present invention a kind of based on CH3NH3PbI3The vertical view of the two-way HEMT device of the N-type of material Schematic diagram；
Fig. 3 is provided in an embodiment of the present invention a kind of based on CH3NH3PbI3The preparation of the two-way HEMT device of the N-type of material Method flow schematic diagram；
Fig. 4 a- Fig. 4 h is provided in an embodiment of the present invention a kind of based on CH3NH3PbI3The two-way HEMT device of the N-type of material Preparation method schematic diagram；
Fig. 5 is a kind of structural schematic diagram of first mask plate provided in an embodiment of the present invention；And
Fig. 6 is a kind of structural schematic diagram of second mask plate provided in an embodiment of the present invention.
Specific embodiment
Further detailed description is done to the present invention combined with specific embodiments below, but embodiments of the present invention are not limited to This.
Embodiment one
Traditional HEMT high electron mobility transistor complex process and at high cost, and it is based on CH3NH3PbI3Material HEMT preparation is simple, at low cost；Traditional inorganic HEMT high electron mobility transistor is all to belong to the conversion of electric energy to electric energy, It is not able to satisfy the demand to the photoelectricity high electron mobility transistor of visible light wave range, and CH3NH3PbI3Material have both it is organic/ The property of inorganic material and excellent photoelectric characteristic itself, can be very good to meet market to the high electronics of the photoelectricity of visible light wave range The demand of mobility transistor is based on CH3NH3PbI3It is real that the HEMT of material can generate a large amount of photo-generated carrier by illumination Existing electric energy adds luminous energy to the conversion of electric energy, promotes transfer efficiency.In addition, being based on CH3NH3PbI3The HEMT of material can pass through grid Control plus light-operated realization dual control, and the raising efficiency in terms of light can be realized by controlling light intensity.CH3NH3PbI3Material Two-way HEMT high electron mobility transistor can enhance the utilization rate of light by upper and lower illumination, and then obtain higher efficiency HEMT device.
Referring to Figure 1 and Fig. 2, Fig. 1 are provided in an embodiment of the present invention a kind of based on CH3NH3PbI3The N-type of material is two-way The schematic cross-section of HEMT device, Fig. 2 are provided in an embodiment of the present invention a kind of based on CH3NH3PbI3The N-type of material is two-way The schematic top plan view of HEMT device.Two-way HEMT of the invention includes: substrate 1, electro-conductive glass 2, light absorbing layer 3, electron-transport Layer 4, source-drain electrode 5, electron transfer layer 6, light absorbing layer 7, gate electrode 8.Substrate 1, electro-conductive glass 2, light absorbing layer 3, electronics pass The material vertical distribution from the bottom to top in order of defeated layer 4, source-drain electrode 5, electron transfer layer 6, light absorbing layer 7, gate electrode 8, shape At multilayer symmetric structure, two-way high electron mobility transistor is constituted.
Sapphire Substrate can be used in the substrate 1；Golden material can be used in the source-drain electrode 5；The electronics passes TiO can be used in defeated layer 4,62Material；CH can be used in the light absorbing layer 3,73NH3PbI3Material；The electro-conductive glass 2 can Using FTO material；Golden material can be used in the gate electrode 8.
Fig. 3 is referred to, Fig. 3 is provided in an embodiment of the present invention a kind of based on CH3NH3PbI3The two-way HEMT of the N-type of material The preparation method flow diagram of device.This method comprises the following steps:
Step 1 chooses substrate；
Step 2 forms FTO film in the substrate surface；
Step 3 prepares CH in the FTO film surface3NH3PbI3Material is to form the first light absorbing layer；
Step 4 forms the first electron transfer layer on first light absorbing layer surface；
Step 5 forms source electrode and drain electrode in the first electron-transport layer surface；
Step 6, the source electrode, the drain electrode and do not covered by the source electrode and the drain electrode described the One electron-transport layer surface forms the second electron transfer layer；
Step 7 prepares CH in the second electron-transport layer surface3NH3PbI3Material is to form the second light absorbing layer；
Step 8 forms gate electrode on second light absorbing layer surface, ultimately forms the two-way HEMT device.
For step 1, may include:
Choose the Al with a thickness of 200 μm -600 μm2O3Material is as the substrate；Or
It chooses the Si material with a thickness of 200 μm -600 μm and forms thickness using thermal oxidation technology in the Si material surface For 1 μm of SiO2Material, with Si material and SiO2Material is integrally used as the substrate.
For step 2, may include:
Step 21 obtains sediment after stirring is added into secondary distilled water in butyl titanate；
Step 22 is applied to the lining after stirring in the mixed liquor of sediment addition secondary distilled water and concentrated nitric acid Bottom surface is to form the FTO film.
For step 3, may include:
Step 31, by PbI2And CH3NH3I is successively added in DMSO:GBL and stirs, and CH is formed after standing3NH3PbI3It is molten Liquid；
Step 32, using single semar technique by the CH3NH3PbI3Solution is spin-coated on the FTO film surface and by moving back Fire process forms first light absorbing layer.
For step 4, may include:
Using TiO2As target, under the atmosphere of argon gas and oxygen, using magnetron sputtering technique, inhaled in first light It receives layer surface and makes TiO2Material is to form first electron transfer layer.
For step 5, may include:
Using the first metal material as target, under an argon atmosphere, using magnetron sputtering technique, using the first mask plate First metal material is formed using as the source electrode and the drain electrode in the first electron-transport layer surface.Its In, first metal material can be Au, be also possible to the stable metal of the chemical property such as Ag, Pt, or can use Metal Al, Ti or Ni etc. at low cost.
For step 6, may include:
Using TiO2As target, under the atmosphere of argon gas and oxygen, using magnetron sputtering technique, the source electrode, The drain electrode and the first electron transfer layer surface deposition TiO not covered by the source electrode and the drain electrode2Material Material is to form second electron transfer layer.
For step 7, may include:
Step 71, by PbI2And CH3NH3I is successively added in DMSO:GBL and stirs, and CH is formed after standing3NH3PbI3It is molten Liquid；
Step 72, using single semar technique by the CH3NH3PbI3Solution is spin-coated on the second electron-transport layer surface And second light absorbing layer is formed by annealing process.
For step 8, may include:
Using the second metal material as target, under an argon atmosphere, using magnetron sputtering technique, using the second mask plate Second metal material is formed using as the gate electrode on second light absorbing layer surface.Wherein, the second metal material It can be the stable metals of chemical property such as Au, Ag, Pt, or metal Al, Ti or Ni etc. at low cost.
The embodiment of the present invention can absorb more light and generate photo-generated carrier, enhancing by using symmetrical light absorbing layer Device performance；In addition, as bottom gate electrode, being able to achieve using in the transparent electro-conductive glass FTO of transparent sapphire growth Lower illumination can be irradiated to light absorbing layer, enhance device performance；Again, using by CH3NH3PbI3A large amount of electricity is provided to channel Son forms two-way HEMT high electron mobility transistor, has mobility high, and switching speed is fast, and light absorption enhancing, photoproduction carries Stream increases, transmission characteristic enhancing, the big advantage of photoelectric conversion efficiency.
Embodiment two
It is that one kind provided in an embodiment of the present invention is based on please also refer to Fig. 4 a- Fig. 4 h and Fig. 5 and Fig. 6, Fig. 4 a- Fig. 4 h The preparation method schematic diagram of the two-way HEMT device of the N-type of CH3NH3PbI3 material；Fig. 5 is provided in an embodiment of the present invention a kind of the The structural schematic diagram of one mask plate；Fig. 6 is a kind of structural schematic diagram of second mask plate provided in an embodiment of the present invention.This implementation Example on the basis of the above embodiments, to of the invention based on CH3NH3PbI3The preparation method of the two-way HEMT device of the N-type of material It is described in detail as follows:
Step 1: referring to Fig. 4 a, prepare sapphire Al2O3Substrate 1, with a thickness of 200 μm -600 μm.
Substrate selects sapphire Al2O3Reason: since its is cheap, and good insulation preformance, effectively prevent two-way HEMT Longitudinal electric leakage of high electron mobility transistor.
The SiO of 200 μm of 1 μm of -600 μm of silicon substrate thermal oxides can be selected in substrate2Substitution, but insulation effect is deteriorated after substitution, And manufacturing process is increasingly complex.
Step 2: referring to Fig. 4 b, prepare electro-conductive glass using sol method in the Sapphire Substrate 1 that step 1 is prepared FTO 2.Specifically, the thickness of electro-conductive glass FTO 2 can be 100~300nm.
5~16ml butyl titanate is added in 20~75ml secondary distilled water, 3~5h is stirred to react.By what is obtained Precipitating filtering, is transferred in three-necked flask after washing repeatedly, 100~300ml secondary distilled water and 3ml concentrated nitric acid is added, in 60 ~90 DEG C of 24~48h of stirring to get arrive transparent FTO colloidal sol.
Step 3: referring to Fig. 4 c, spin coating CH on the electro-conductive glass FTO 2 prepared by step 23NH3PbI3Material light is inhaled Receive layer 3.
Using single spin-coating method on step 2 gained FTO electro-conductive glass spin coating CH3NH3PbI3Light absorbing layer 3.Specifically, By the PbI of 654mg2With the CH of 217mg3NH3I is successively added in DMSO:GBL, obtains PbI2And CH3NH3The mixed solution of I；It will PbI2And CH3NH3The mixed solution of I stirs two hours at 80 degrees celsius, the solution after being stirred；By the solution after stirring 1 hour is stood at 80 degrees Celsius, obtains CH3NH3PbI3Solution；By CH3NH3PbI3Solution is added drop-wise to the resulting conductive glass of step 2 It on glass, anneals 20 minutes under 100 degrees Celsius, forms CH3NH3PbI3Light absorbing layer, light absorbing layer is with a thickness of 200~300nm.
Step 4: referring to Fig. 4 d, deposited on light absorbing layer 3 using magnetron sputtering technique or atom layer deposition process TiO2The electron transfer layer 4 of material.
Target used is the TiO of purity Coriolis mass percentage > 99.99% in magnetron sputtering technique2Target, target diameter 50mm, With a thickness of 1.5-3mm, before sputtering, magnetron sputtering apparatus cavity clean within 5 minutes with high-purity argon gas, is then vacuumized, very Reciprocal of duty cycle is 1.3 × 10-3-3×10-3Pa is then successively passed through argon gas and oxygen, by adjusting flow control argon gas and oxygen Volume ratio is 9:1, and total pressure remains 2.0Pa, sputtering power 60-80W, using 70 DEG C to 150 DEG C after growth Annealing, thus prepares TiO on light absorbing layer2Electron transfer layer, transport layer is with a thickness of 50-200nm.
Step 5: Fig. 4 e and Fig. 5 are referred to, using the first mask plate, in CH3NH3PbI3Magnetron sputtering is adopted on light absorbing layer 4 The source-drain electrode 5 prepared with golden material.
Sputtering target material select quality than purity > 99.99% gold, using mass percent purity be 99.999% Ar as Sputter gas is passed through sputtering chamber, before sputtering, clean within 5 minutes to magnetron sputtering apparatus cavity with high-purity argon gas, then take out true It is empty.It is 6 × 10 in vacuum degree-4-1.3×10-3Pa, argon flow 20-30cm3/ second, target cardinal distance are 10cm and work function Under conditions of rate is 20W-100W, source-drain electrode gold, thickness of electrode 100nm-300nm are prepared.
Source-drain electrode 5 can be selected Al Ti Ni Ag the metal substitutes such as Pt.Wherein Au Ag Pt chemical property stablize；Al\ Ti Ni it is at low cost.
Step 6: referring to Fig. 4 f, TiO is deposited using magnetron sputtering technique or atom layer deposition process2The electronics of material Transport layer 6.
By taking magnetron sputtering technique as an example: target used is purity Coriolis mass percentage > 99.99% in magnetron sputtering technique TiO2Target, target diameter 50mm before sputtering, carry out 5 points to magnetron sputtering apparatus cavity with high-purity argon gas with a thickness of 1.5-3mm Clock cleaning, then vacuumizes, and vacuum degree is 1.3 × 10-3~3 × 10-3Pa is then successively passed through argon gas and oxygen, passes through tune It is 9:1 that amount of restriction, which controls argon gas and the volume ratio of oxygen, and total pressure remains 2.0Pa, sputtering power 60-80W, and growth terminates Afterwards using 70 DEG C to 150 DEG C of annealing, TiO thus is prepared on substrate and source-drain electrode2Electron transfer layer, transport layer With a thickness of 150-500nm.
Step 7: Fig. 4 g is referred to, in electron transfer layer TiO2Upper spin coating CH3NH3PbI3The light absorbing layer 7 of material.
Using single spin-coating method in step 7 gained TiO2Spin coating CH on electron transfer layer3NH3PbI3Light absorbing layer, will The PbI of 654mg2With the CH of 217mg3NH3I is successively added in DMSO:GBL, obtains PbI2And CH3NH3The mixed solution of I；It will PbI2And CH3NH3The mixed solution of I stirs two hours at 80 degrees celsius, the solution after being stirred；By the solution after stirring 1 hour is stood at 80 degrees Celsius, obtains CH3NH3PbI3Solution；By CH3NH3PbI3Solution is added drop-wise to the resulting TiO of step 62 It on film, anneals 20 minutes under 100 degrees Celsius, forms CH3NH3PbI3Light absorbing layer, light absorbing layer is with a thickness of 200-300nm.
Step 8: Fig. 4 h and Fig. 6 are referred to, using the second mask plate, in CH3NH3PbI3Magnetron sputtering gold on light absorbing layer 7 The gate electrode 8 of material.
Using magnetron sputtering technique in step 7 gained light absorbing layer CH3NH3PbI3Upper magnetron sputtering gate electrode gold material, splashes Material of shooting at the target selects quality than the gold of purity > 99.99%, using the Ar that mass percent purity is 99.999% as sputter gas It is passed through sputtering chamber, before sputtering, magnetron sputtering apparatus cavity clean within 5 minutes with high-purity argon gas, is then vacuumized.In vacuum Degree is 6 × 10-4-1.3×10-3Pa, argon flow 20-30cm3/ second, target cardinal distance are 10cm and operating power is 20W- Under conditions of 100W, gate electrode gold, thickness of electrode 100nm-300nm are prepared.
Gate electrode 8 can be selected Al Ti Ni Ag the metal substitutes such as Pt.Wherein Au Ag Pt chemical property stablize；Al\Ti\ Ni is at low cost.
The above content is a further detailed description of the present invention in conjunction with specific preferred embodiments, and it cannot be said that Specific implementation of the invention is only limited to these instructions.For those of ordinary skill in the art to which the present invention belongs, exist Under the premise of not departing from present inventive concept, a number of simple deductions or replacements can also be made, all shall be regarded as belonging to of the invention Protection scope.

Claims (9)

1. one kind is based on CH3NH3PbI3The preparation method of the two-way HEMT device of the N-type of material characterized by comprising
Choose substrate；The substrate is Al2O3Material or Si material and SiO2Material is whole；
FTO film is formed in the substrate surface；The FTO film is that butyl titanate is added to stir into secondary distilled water After obtain sediment, then the sediment is added in the mixed liquor of secondary distilled water and concentrated nitric acid stir after be applied to the lining Bottom surface is formed；
CH is prepared in the FTO film surface using single semar technique3NH3PbI3Material is to form the first light absorbing layer；
The first electron transfer layer is formed on first light absorbing layer surface using magnetron sputtering technique；
Source electrode and drain electrode is formed in the first electron-transport layer surface using magnetron sputtering technique；
It is not covered in the source electrode, the drain electrode and by the source electrode and the drain electrode using magnetron sputtering technique The first electron-transport layer surface forms the second electron transfer layer；
CH is prepared in the second electron-transport layer surface using single semar technique3NH3PbI3Material is to form the second light absorption Layer；
Gate electrode is formed on second light absorbing layer surface using magnetron sputtering technique, ultimately forms the two-way HEMT device Part.
2. the method according to claim 1, wherein
The Al2O3Material with a thickness of 200 μm -600 μm；The Si material with a thickness of 200 μm -600 μm, SiO2Material With a thickness of 1 μm, SiO2Material use thermal oxidation technology is formed in Si material surface.
3. the method according to claim 1, wherein preparing CH in the FTO film surface3NH3PbI3Material with Form the first light absorbing layer, comprising:
By PbI2And CH3NH3I is successively added in DMSO:GBL and stirs, and CH is formed after standing3NH3PbI3Solution；
Using single semar technique by the CH3NH3PbI3Solution is spin-coated on the FTO film surface and is formed by annealing process First light absorbing layer.
4. being passed the method according to claim 1, wherein forming the first electronics on first light absorbing layer surface Defeated layer, comprising:
Using TiO2As target, under the atmosphere of argon gas and oxygen, using magnetron sputtering technique, in first light absorbing layer Surface makes TiO2Material is to form first electron transfer layer.
5. the method according to claim 1, wherein the first electron-transport layer surface formed source electrode and Drain electrode, comprising:
Using the first metal material as target, under an argon atmosphere, using magnetron sputtering technique, using the first mask plate in institute It states the first electron-transport layer surface and forms first metal material using as the source electrode and the drain electrode.
6. the method according to claim 1, wherein in the source electrode, the drain electrode and not by the source Electrode and the first electron-transport layer surface of drain electrode covering form the second electron transfer layer, comprising:
Using TiO2As target, under the atmosphere of argon gas and oxygen, using magnetron sputtering technique, in the source electrode, the leakage Electrode and the first electron transfer layer surface deposition TiO not covered by the source electrode and the drain electrode2Material is with shape At second electron transfer layer.
7. the method according to claim 1, wherein being prepared in the second electron-transport layer surface CH3NH3PbI3Material is to form the second light absorbing layer, comprising:
By PbI2And CH3NH3I is successively added in DMSO:GBL and stirs, and CH is formed after standing3NH3PbI3Solution；
Using single semar technique by the CH3NH3PbI3Solution is spin-coated on the second electron-transport layer surface and passes through lehr attendant Skill forms second light absorbing layer.
8. the method according to claim 1, wherein forming gate electrode, packet on second light absorbing layer surface It includes:
Using the second metal material as target, under an argon atmosphere, using magnetron sputtering technique, using the second mask plate in institute It states the second light absorbing layer surface and forms second metal material using as the gate electrode.
9. one kind is based on CH3NH3PbI3The two-way HEMT device of the N-type of material, which is characterized in that the two-way HEMT device is by weighing Benefit requires the described in any item methods of 1-8 to prepare to be formed.
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