CN106549106A - A kind of thin-film solar cells based on laminated perovskite structure material and preparation method thereof - Google Patents
A kind of thin-film solar cells based on laminated perovskite structure material and preparation method thereof Download PDFInfo
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Abstract
The present invention provides a kind of thin-film solar cells based on laminated perovskite structure material, including the substrate, hole transmission layer, light absorbing zone, electron transfer layer and the electrode that are sequentially connected, wherein, the substrate is indium tin oxide-coated glass；Hole transmission layer is poly- 3,4 ethylenedioxy thiophenes/poly styrene sulfonate；The light absorbing zone is layered perovskites (C2H9N2)(CH3NH3)2Pb3I10Or (C2H9N2)(NH2CH=NH2)2Pb3I10；Electron transfer layer is fullerene derivate；The electrode is aluminium film.The present invention also provides a kind of preparation method of the thin-film solar cells based on laminated perovskite structure material.The thin-film solar cells of the present invention adopt laminated perovskite structure material for light absorbing zone, can improve the stability of thin-film solar cells.
Description
Technical field
The present invention relates to a kind of solaode, relates more specifically to a kind of thin film based on laminated perovskite structure material
Solaode and preparation method thereof.
Background technology
Solar energy is the main source of earth surface human energy.As the formation speed of fossil energy sources is opened much smaller than which
Adopt speed, exploitation difficulty and cost drop more and more higher, the energy investment return rate of fossil energy sources, i.e., by energy extraction obtained by
The ratio of quantity of energy that consumes of quantity of energy and recovery process, be constantly in downward trend for a long time, with entering for return rate
One step declines, and the exploitated ore energy is not had meaning economically.It was predicted that with current energy resource consumption growth rate, arriving
The year two thousand fifty and 2100, the energy resource consumption in the whole world only will be provided with solar electrical energy generation, with the progressively maturation of heliotechnics, single
Position cost is being reduced always, and energy investment return rate is also gradually stepped up, and the popularity rate of solar electrical energy generation also increases in index, calcium titanium
Ore deposit solaode is the emerging thin-film solar cells of a class, mainly uses the photovoltaic material with perovskite structure and comes real
Existing opto-electronic conversion, the highest photoelectric transformation efficiency of Jing National Renewable Energy laboratory (NREL) certifications have reached
22%, it is with a wide range of applications.
However, due to the light absorption layer material for using at present property stable in the air it is poor, therefore prepare the thin film sun
The aerial less stable of energy battery, it is impossible to carry out industrialization production, in addition, the light absorbing zone of the battery of planar structure is thin
The complicated process of preparation of film, it is difficult to prepare the light absorbing zone thin film of surface compact, significantly limit solar cell photoelectric and turns
Change the raising of efficiency.Therefore, the light using the preferable laminated perovskite structure material of stability as thin-film solar cells is inhaled
Layer is received for the practical application of propulsion perovskite solaode has a very big significance.
The content of the invention
It is an object of the invention to provide a kind of thin-film solar cells and its preparation based on laminated perovskite structure material
Method, it is poor so as to solve the problems, such as light absorption layer material of the prior art property stable in the air.
The thin-film solar cells based on laminated perovskite structure material that the present invention is provided, including the lining being sequentially connected
Bottom, hole transmission layer, light absorbing zone, electron transfer layer and electrode, wherein, the substrate is indium tin oxide-coated glass (ITO)；
Hole transmission layer is poly- 3,4-ethylene dioxythiophene/poly styrene sulfonate (PEDOT:PSS)；The light absorbing zone is stratiform calcium
Titanium ore material (C2H9N2)(CH3NH3)2Pb3I10Or (C2H9N2)(NH2CH=NH2)2Pb3I10；Electron transfer layer is derivative for fullerene
Thing (PCBM)；The electrode is aluminium film.
Preferably, the thickness of the light absorbing zone is 60-300nm.
Preferably, the indium tin oxide-coated glass (ITO) is the indium tin oxide-coated glass (ITO) for processing.The place
Reason process is to be cleaned by ultrasonic ITO electro-conductive glass successively with acetone, ethanol, deionized water, then Jing UV ozones are processed, and ultrasound is clear
The power washed is 30W, and frequency is 40KHZ, and scavenging period is 20-30min；UV ozone process time is 30-60min, is obtained
Clean indium tin oxide-coated glass.
Preferably, the thickness of the hole transmission layer is 20-500nm.
Preferably, the molecular formula of electron transfer layer is C82H14O2Or C72H14O2。
Preferably, the thickness of the electrode is 50-80nm.
The present invention also provides a kind of preparation method of the thin-film solar cells based on laminated perovskite structure material, including
Following steps：S1, there is provided the substrate of indium tin oxide-coated glass (ITO)；S2 is square into poly- 3,4- ethylenes two over the substrate
Oxygen thiophene/poly styrene sulfonate (PEDOT:PSS hole transmission layer)；S3, forms stratiform calcium in the top of hole transmission layer
The light absorbing zone of titanium ore material, layered perovskite material are (C2H9N2)(CH3NH3)2Pb3I10Or (C2H9N2)(NH2CH=
NH2)2Pb3I10；S4, forms the electron transfer layer of fullerene derivate (PCBM) above the light absorbing zone；S5, in the electricity
The electrode of aluminium film is formed above sub- transport layer.
Preferably, step S1 is included indium tin oxide-coated glass (ITO) successively with acetone, ethanol, deionized water ultrasound
Cleaning, then the process of Jing UV ozones, form substrate.
Preferably, step S2 is included poly- 3,4-ethylene dioxythiophene/poly styrene sulfonate (PEDOT:PSS forerunner)
Liquid solution is spun on substrate, and annealing forms hole transmission layer.
Preferably, step S3 includes the precursor solution of layered perovskites is spun on hole transmission layer, annealing
Form light absorbing zone.
Preferably, the preparation technology of the precursor solution of layered perovskite material includes：S31, by hydroiodic acid and
Ethylenediamine synthesis obtains (C2H9N2)I2Crystal；S32, by (C2H9N2)I2、CH3NH3I and PbI2Stratiform is obtained in being dissolved in organic solvent
Perovskite material (C2H9N2)(CH3NH3)2Pb3I10Precursor solution；Or by (C2H9N2)I2、NH2CH=NH2I and PbI2It is molten
Layered perovskites (C is obtained in organic solvent2H9N2)(NH2CH=NH2)2Pb3I10Precursor solution.
Preferably, step S4 includes the solution of fullerene derivate (PCBM) is spun on light absorbing zone, forms electronics
Transport layer.
Preferably, step S5 includes for aluminum heating melting hydatogenesis on electron transfer layer, forms electrode.
The present invention adopts laminated perovskite structure material for light absorbing zone, can improve stablizing for thin-film solar cells
Property, extend battery, reduce preparation cost.The beneficial effects of the present invention is：Stratiform calcium titanium prepared by the present invention
Pit wood material (C2H9N2)(CH3NH3)2Pb3I10Or (C2H9N2)(NH2CH=NH2)2Pb3I10Be tightly combined between layers, shape
Rule, size uniform.The lamella on surface of combining closely is similar to " protective cover ", can play a protective role, the calcium inside reduction
Contact of the perovskite like structure material with moisture in air such that it is able to the stable existence under humidity environment.Layered perovskites should
The quality of forming film and stability of light absorbing zone in for thin-film solar cells, are effectively improved, and water in air can be reduced
Impact of the steam to device stability, extends battery；Meanwhile, it is capable to regulate and control interface energy level, preferable energy is realized
Level matching, energy conversion efficiency can reach 11.58%, and very well, becoming the industrialization of perovskite solaode can for repeatability
Energy.
Specific embodiment
The preparation method of membrane according to the invention solaode includes layered perovskites (C first2H9N2)
(CH3NH3)2Pb3I10Preparation, concrete technology is as follows：
1st, synthesize (C2H9N2)I2：Under 0 DEG C of water bath condition, 57wt.% hydriodic acid aqueous solutions are slowly added dropwise with pipettor
To in 99wt.% ethylenediamines, wherein hydroiodic acid and the mol ratio of ethylenediamine are 1：0.6-0.8, magnetic agitation 6h, by mixed solution
Rotary evaporation liquid 0.2-1h is carried out under the conditions of 80-90 DEG C, after liquid is evaporated, sucking filtration obtains yellow-white crystalline substance after being cooled to room temperature
The positive empty drying baker that the white crystal is placed in 40-80 DEG C is carried out vacuum drying 3-6h, finally gives (C by body2H9N2)I2Crystal.
CH3NH3I and PbI2Be purchased from scientific ＆ technical corporation of Talkweb is stepped in Shanghai.
2nd, synthesize (C2H9N2)(CH3NH3)2Pb3I10：By (C2H9N2)I2、CH3NH3I and PbI2According to 1:2:3 ratio is molten
In DMF solution, 15min under room temperature, is stirred, keep 50-70 DEG C of reaction 3-5h, obtain containing stratiform calcium titanium
Pit wood material (C2H9N2)(CH3NH3)2Pb3I10Precursor solution.
Alternately, the preparation method of membrane according to the invention solaode includes layered perovskites first
(C2H9N2)(NH2CH=NH2)2Pb3I10Preparation, concrete technology is as follows：
1st, synthesize (C2H9N2)I2：Under 0 DEG C of water bath condition, 57wt.% hydriodic acid aqueous solutions are slowly added dropwise with pipettor
To in 99wt.% ethylenediamines, wherein hydroiodic acid and the mol ratio of ethylenediamine are 1：0.6-0.8, magnetic agitation 6h, by mixed solution
Rotary evaporation liquid 0.2-1h is carried out under the conditions of 80-90 DEG C, after liquid is evaporated, sucking filtration obtains yellow-white crystalline substance after being cooled to room temperature
The positive empty drying baker that the white crystal is placed in 40-80 DEG C is carried out vacuum drying 3-6h, finally gives (C by body2H9N2)I2Crystal.
NH2CH=NH2I and PbI2Be purchased from scientific ＆ technical corporation of Talkweb is stepped in Shanghai.
2nd, synthesize (C2H9N2)(CH3NH3)2Pb3I10：By (C2H9N2)I2、NH2CH=NH2I and PbI2According to 1:2:3 ratio
Example is dissolved in DMF solution, and 15min is stirred under room temperature, is kept 50-70 DEG C of reaction 3-5h, is obtained containing stratiform
Perovskite material (C2H9N2)(NH2CH=NH2)2Pb3I10Precursor solution.
Below in conjunction with specific embodiment, the preparation method of the thin-film solar cells of the present invention is described further.Should
Understand, following examples are merely to illustrate the present invention not for restriction the scope of the present invention.
Embodiment 1
A kind of preparation method of the thin-film solar cells based on laminated perovskite structure material, comprises the steps：
Step S1：A kind of substrate is provided：Indium tin oxide-coated glass (ITO) is surpassed with acetone, ethanol, deionized water successively
Sound is cleaned, then Jing UV ozones are processed, and the power of ultrasonic cleaning is 30W, and frequency is 40KHZ, and scavenging period is 20min；It is ultraviolet
Ozone treatment time is 30min, obtains the indium tin oxide-coated glass (ITO) of cleaning；
Step S2, forms hole transmission layer above the substrate obtained by S1：By the PEDOT for preparing:PSS precursor solutions
It is spun on indium tin oxide-coated glass (ITO), rotating speed is 5000r/s, and the time is 20s, then, 500 DEG C are annealed 1 hour, shape
Into hole transmission layer；
Step S3, forms the perovskite light absorbing zone of layer structure in the top of the hole transmission layer obtained by S2：By stratiform
Perovskite structural material (C2H9N2)(CH3NH3)2Pb3I10Precursor solution be spin-coated on PEDOT:Above PSS, rotating speed is
3000r/s, time are 60s, and then, 100 DEG C are annealed 10 minutes, form light absorbing zone；
Step S4, forms electron transfer layer above the light absorbing zone prepared by S3：The PCBM solution of configuration is spin-coated on
Above light absorbing zone, rotating speed is 3000r/s, and the time is 35s, forms electron transfer layer；
Step S5, forms electrode above the electron transfer layer prepared by S4：Thermal evaporation step is：In 2.5 × 10-
Under the vacuum of 4Pa, aluminium electrode is deposited with the electron transport layer using thermal evaporation, thickness is 60nm.
Thin-film solar cells manufactured in the present embodiment, open-circuit voltage are 1.24V, and short-circuit current density is 16.57mA/
Cm2, fill factor, curve factor are 0.563, and energy conversion efficiency is 11.58%.
Embodiment 2
A kind of preparation method of the thin-film solar cells based on laminated perovskite structure material, comprises the steps：
Step S1：A kind of substrate is provided：Indium tin oxide-coated glass (ITO) is surpassed with acetone, ethanol, deionized water successively
Sound is cleaned, then Jing UV ozones are processed, and the power of ultrasonic cleaning is 30W, and frequency is 40KHZ, and scavenging period is 30min；It is ultraviolet
Ozone treatment time is 60min, obtains the indium tin oxide-coated glass (ITO) of cleaning；
Step S2, forms hole transmission layer above the substrate obtained by S1：By the PEDOT for preparing:PSS precursor solutions
It is spun on indium tin oxide-coated glass (ITO), rotating speed is 5000r/s, and the time is 20s, then, 500 DEG C are annealed 1 hour, shape
Into hole transmission layer；
Step S3, forms the perovskite light absorbing zone of layer structure in the top of the hole transmission layer obtained by S2：By stratiform
Perovskite structural material (C2H9N2)(NH2CH=NH2)2Pb3I10Precursor solution be spin-coated on PEDOT:Above PSS, rotating speed is
3000r/s, time are 60s, and then, 100 DEG C are annealed 10 minutes, form light absorbing zone；
Step S4, forms electron transfer layer above the light absorbing zone prepared by S3：The PCBM solution of configuration is spin-coated on
Above light absorbing zone, rotating speed is 3000r/s, and the time is 35s, forms electron transfer layer；
Step S5, forms electrode above the electron transfer layer prepared by S4：Thermal evaporation step is：In 2.5 × 10-
Under the vacuum of 4Pa, aluminium electrode is deposited with the electron transport layer using thermal evaporation, thickness is 80nm.
Thin-film solar cells manufactured in the present embodiment, open-circuit voltage are 0.95V, and short-circuit current density is 15.53mA/
Cm2, fill factor, curve factor are 0.611, and energy conversion efficiency is 8.98%.
Embodiment 3
A kind of preparation method of the thin-film solar cells based on laminated perovskite structure material, comprises the steps：
Step S1：A kind of substrate is provided：Indium tin oxide-coated glass (ITO) is surpassed with acetone, ethanol, deionized water successively
Sound is cleaned, then Jing UV ozones are processed, and the power of ultrasonic cleaning is 30W, and frequency is 40KHZ, and scavenging period is 25min；It is ultraviolet
Ozone treatment time is 35min, obtains the indium tin oxide-coated glass (ITO) of cleaning；
Step S2, forms hole transmission layer above the substrate obtained by S1：By the PEDOT for preparing:PSS precursor solutions
It is spun on indium tin oxide-coated glass (ITO), rotating speed is 5000r/s, and the time is 20s, then, 500 DEG C are annealed 1 hour, shape
Into hole transmission layer；
Step S3, forms the perovskite light absorbing zone of layer structure in the top of the hole transmission layer obtained by S2：By stratiform
Perovskite structural material (C2H8N10H3)(CH3NH3)2Pb3I10Precursor solution be spin-coated on PEDOT:Above PSS, rotating speed is
3000r/s, time are 60s, and then, 100 DEG C are annealed 10 minutes, form light absorbing zone；
Step S4, forms electron transfer layer above the light absorbing zone prepared by S3：The PCBM solution of configuration is spin-coated on
Above light absorbing zone, rotating speed is 3000r/s, and the time is 35s, forms electron transfer layer；
Step S5, forms electrode above the electron transfer layer prepared by S4：Thermal evaporation step is：In 2.5 × 10-
Under the vacuum of 4Pa, aluminium electrode is deposited with the electron transport layer using thermal evaporation, thickness is 60nm.
Thin-film solar cells manufactured in the present embodiment, open-circuit voltage are 0.96V, and short-circuit current density is 16.55mA/
Cm2, fill factor, curve factor are 0.627, and energy conversion efficiency is 9.79%.
Embodiment 4
A kind of preparation method of the thin-film solar cells based on laminated perovskite structure material, comprises the steps：
Step S1：A kind of substrate is provided：Indium tin oxide-coated glass (ITO) is surpassed with acetone, ethanol, deionized water successively
Sound is cleaned, then Jing UV ozones are processed, and the power of ultrasonic cleaning is 30W, and frequency is 40KHZ, and scavenging period is 20min；It is ultraviolet
Ozone treatment time is 40min, obtains the indium tin oxide-coated glass (ITO) of cleaning；
Step S2, forms hole transmission layer above the substrate obtained by S1：By the PEDOT for preparing:PSS precursor solutions
It is spun on indium tin oxide-coated glass (ITO), rotating speed is 5000r/s, and the time is 20s, then, 500 DEG C are annealed 1 hour, shape
Into hole transmission layer；
Step S3, forms the perovskite light absorbing zone of layer structure in the top of the hole transmission layer obtained by S2：By stratiform
Perovskite structural material (C2H8N10H3)(CH3NH3)2Pb3I10Precursor solution be spin-coated on PEDOT:Above PSS, rotating speed is
3000r/s, time are 60s, and then, 100 DEG C are annealed 10 minutes, form light absorbing zone；
Step S4, forms electron transfer layer above the light absorbing zone prepared by S3：The PCBM solution of configuration is spin-coated on
Above light absorbing zone, rotating speed is 3000r/s, and the time is 35s, forms electron transfer layer；
Step S5, forms electrode above the electron transfer layer prepared by S4：Thermal evaporation step is：In 2.5 × 10-
Under the vacuum of 4Pa, aluminium electrode is deposited with the electron transport layer using thermal evaporation, thickness is 50nm.
Thin-film solar cells manufactured in the present embodiment, open-circuit voltage are 0.94V, and short-circuit current density is 18.55mA/
Cm2, fill factor, curve factor are 0.635, and energy conversion efficiency is 10.91%.
Above-described, only presently preferred embodiments of the present invention is not limited to the scope of the present invention, and the present invention's is upper
State embodiment to make a variety of changes.What i.e. every claims and description according to the present patent application were made
Simply, equivalence changes and modification, fall within the claims of patent of the present invention.Of the invention not detailed description is
Routine techniquess content.
Claims (13)
1. a kind of thin-film solar cells based on laminated perovskite structure material, including the substrate, hole transport that are sequentially connected
Layer, light absorbing zone, electron transfer layer and electrode, it is characterised in that the substrate is indium tin oxide-coated glass；Hole transmission layer
For poly- 3,4-ethylene dioxythiophene/poly styrene sulfonate；The light absorbing zone is layered perovskites (C2H9N2)
(CH3NH3)2Pb3I10Or (C2H9N2)(NH2CH=NH2)2Pb3I10；Electron transfer layer is fullerene derivate；The electrode is aluminum
Thin film.
2. thin-film solar cells according to claim 1, it is characterised in that the thickness of the light absorbing zone is 60-
300nm。
3. thin-film solar cells according to claim 1, it is characterised in that the indium tin oxide-coated glass was to process
Indium tin oxide-coated glass.
4. thin-film solar cells according to claim 1, it is characterised in that the thickness of the hole transmission layer is 20-
500nm。
5. thin-film solar cells according to claim 1, it is characterised in that the molecular formula of electron transfer layer is C82H14O2
Or C72H14O2。
6. thin-film solar cells according to claim 1, it is characterised in that the thickness of the electrode is 50-80nm.
7. a kind of preparation method of the thin-film solar cells based on laminated perovskite structure material, it is characterised in that include with
Lower step：
S1, there is provided the substrate of indium tin oxide-coated glass；
S2, the over the substrate square hole transmission layer into poly- 3,4-ethylene dioxythiophene/poly styrene sulfonate；
S3, forms the light absorbing zone of layered perovskites in the top of hole transmission layer, and layered perovskite material is
(C2H9N2)(CH3NH3)2Pb3I10Or (C2H9N2)(NH2CH=NH2)2Pb3I10；
S4, forms the electron transfer layer of fullerene derivate above the light absorbing zone；
S5, the on the electron transport layer square electrode into aluminium film.
8. preparation method according to claim 7, it is characterised in that step S1 is included indium tin oxide-coated glass successively
It is cleaned by ultrasonic with acetone, ethanol, deionized water, then Jing UV ozones is processed, and form substrate.
9. preparation method according to claim 7, it is characterised in that step S2 include by poly- 3,4-ethylene dioxythiophene/
The precursor solution of poly styrene sulfonate is spun on substrate, and annealing forms hole transmission layer.
10. preparation method according to claim 7, it is characterised in that step S3 is included before layered perovskites
Drive liquid solution to be spun on hole transmission layer, annealing forms light absorbing zone.
11. preparation methoies according to claim 10, it is characterised in that the precursor solution of layered perovskite material
Preparation technology include：
S31, obtains (C by hydroiodic acid and ethylenediamine synthesis2H9N2)I2Crystal；
S32, by (C2H9N2)I2、CH3NH3I and PbI2Layered perovskites (C is obtained in being dissolved in organic solvent2H9N2)
(CH3NH3)2Pb3I10Precursor solution；Or by (C2H9N2)I2、NH2CH=NH2I and PbI2Obtain in being dissolved in organic solvent
Layered perovskites (C2H9N2)(NH2CH=NH2)2Pb3I10Precursor solution.
12. preparation methoies according to claim 7, it is characterised in that step S4 is included the solution of fullerene derivate
It is spun on light absorbing zone, forms electron transfer layer.
13. preparation methoies according to claim 7, it is characterised in that step S5 is included aluminum heating fusing hydatogenesis
To on electron transfer layer, electrode is formed.
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| CN107887510A (en) * | 2017-10-25 | 2018-04-06 | 深圳大学 | A kind of two-dimensional layer perovskite thin film, solar cell and preparation method thereof |
| CN108550703A (en) * | 2018-05-28 | 2018-09-18 | 黄河水电光伏产业技术有限公司 | A kind of perovskite solar cell and preparation method thereof |
| CN109371470A (en) * | 2018-10-30 | 2019-02-22 | 桂林理工大学 | A kind of narrow band gap organic and inorganic low-dimensional hybrid material and its synthetic method |
| CN109873080A (en) * | 2019-01-24 | 2019-06-11 | 暨南大学 | A kind of perovskite Single Crystal X-ray detector and preparation method thereof |
| CN109873080B (en) * | 2019-01-24 | 2023-02-07 | 暨南大学 | Perovskite single crystal X-ray detector and preparation method thereof |
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