CN106549068B - A kind of Ag@Ag2S/TiO2The synthetic method of nanometer stick array - Google Patents
A kind of Ag@Ag2S/TiO2The synthetic method of nanometer stick array Download PDFInfo
- Publication number
- CN106549068B CN106549068B CN201610833719.2A CN201610833719A CN106549068B CN 106549068 B CN106549068 B CN 106549068B CN 201610833719 A CN201610833719 A CN 201610833719A CN 106549068 B CN106549068 B CN 106549068B
- Authority
- CN
- China
- Prior art keywords
- tio
- stick array
- nanometer stick
- solution
- array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910052946 acanthite Inorganic materials 0.000 title claims abstract description 13
- 238000010189 synthetic method Methods 0.000 title claims abstract description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 30
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(I) nitrate Inorganic materials [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims abstract description 24
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000012986 modification Methods 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000011521 glass Substances 0.000 claims abstract description 6
- 239000000243 solution Substances 0.000 claims description 22
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 15
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 15
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 12
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 12
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 10
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 9
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 7
- 238000000137 annealing Methods 0.000 claims description 5
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 5
- 239000011259 mixed solution Substances 0.000 claims description 5
- 238000003756 stirring Methods 0.000 claims description 5
- 239000003643 water by type Substances 0.000 claims description 5
- IDGUHHHQCWSQLU-UHFFFAOYSA-N ethanol;hydrate Chemical compound O.CCO IDGUHHHQCWSQLU-UHFFFAOYSA-N 0.000 claims description 3
- 230000004044 response Effects 0.000 claims description 2
- 101710134784 Agnoprotein Proteins 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 150000007513 acids Chemical class 0.000 claims 1
- 229910052979 sodium sulfide Inorganic materials 0.000 claims 1
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract description 4
- 239000005864 Sulphur Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 230000005540 biological transmission Effects 0.000 abstract description 3
- 230000004048 modification Effects 0.000 abstract description 3
- 239000010405 anode material Substances 0.000 abstract description 2
- 239000000463 material Substances 0.000 abstract description 2
- 230000008569 process Effects 0.000 abstract description 2
- 230000002195 synergetic effect Effects 0.000 abstract description 2
- 239000002243 precursor Substances 0.000 abstract 1
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 206010070834 Sensitisation Diseases 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000008313 sensitization Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 238000007540 photo-reduction reaction Methods 0.000 description 1
- 230000001699 photocatalysis Effects 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002096 quantum dot Substances 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- FSJWWSXPIWGYKC-UHFFFAOYSA-M silver;silver;sulfanide Chemical compound [SH-].[Ag].[Ag+] FSJWWSXPIWGYKC-UHFFFAOYSA-M 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0296—Inorganic materials including, apart from doping material or other impurities, only AIIBVI compounds, e.g. CdS, ZnS, HgCdTe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/0304—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L31/03042—Inorganic materials including, apart from doping materials or other impurities, only AIIIBV compounds characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0324—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIVBVI or AIIBIVCVI chalcogenide compounds, e.g. Pb Sn Te
Abstract
The invention discloses a kind of Ag@Ag2S/TiO2The synthetic method of nanometer stick array, concretely comprises the following steps：（1）TiO is prepared on FTO electro-conductive glass2Nanometer stick array,（2）By TiO2Nanometer stick array immerses AgNO3Precursor solution and with ultraviolet light prepare Ag modification TiO2Nanometer stick array；（3）The TiO that Ag is modified2Nanometer stick array is immersed dissolved with Na2In more sulphur solution of S and S, react and Ag@Ag are made2S/TiO2Nanometer stick array.The present invention utilizes Ag and Ag2The synergistic effect of S can improve absorption of the material to visible ray, transmission, the separative efficiency of photogenerated charge are improved, obtains the light anode material with high light solution water efficiency, and the synthetic method craft is simple, the implementing process of electrode is simplified, is conducive to mass produce.
Description
Technical field
The invention belongs to the synthesis technical field of composite nano materials, and in particular to a kind of Ag@Ag2S/TiO2Nanometer rods battle array
The synthetic method of row.
Background technology
With the fast development of science and technology and the modern industry, fossil energy is exhausted and environmental pollution has become influence society
Understand the principal element of sustainable development, therefore the exploitation and utilization of clean energy resource are extremely urgent.Solar energy is a huge energy
Source treasure-house, is widely used in the hot fields such as solar cell power generation, photocatalysis and photoelectrocatalysis hydrogen production by water decomposition.Day in 1972
This scholar Fujishima and Honda use monocrystalline n-TiO2Water is decomposed as light anode, has opened TiO2As photoelectrochemical credit
Solve the prelude of water light anode.
TiO2Band gap be 3.4eV, the ultraviolet light for occupying sunlight 5% can only be absorbed, seriously affected TiO2To sunlight
Efficiently use.In order to improve TiO2To the capture ability of incident sunlight, generally use doping, narrow gap semiconductor sensitization,
The methods of heterogeneous section and plasma metal-modified, improves TiO2Absorption to visible ray or near infrared light.Publication No.
The patent of CN103151175A discloses a kind of CdS quantum dot sensitization TiO2The preparation method of branched nanostructured, this method
CdS/TiO is successfully prepared using continuous chemical water-bath sedimentation2Structure, CdS is narrow gap semiconductor, can improve light
For anode in the absorption of visible region, but Cd element photoetch situations are serious, and can produce pollution to environment.
Ag is a kind of widely applied plasma resonance metal, and the surface plasma resonance effect of Ag, which utilizes, improves TiO2It is right
The absorption of visible ray, improves transmission and the separative efficiency of photogenerated charge.Ag2The band gap of S is 0.92eV, can absorb solar spectrum
In near infrared light, therefore, design synthesis Ag@Ag2S/TiO2Light anode can make TiO2Light anode is for incident sunlight
Response range is widened near infrared region.
The content of the invention
The technical problem to be solved by the present invention is to provide a kind of easy Ag being combined using photo-reduction and ion exchange
Ag2S/TiO2The synthetic method of nanometer stick array.
The present invention is to solve above-mentioned technical problem to adopt the following technical scheme that, a kind of Ag@Ag2S/TiO2Nanometer stick array
Synthetic method, it is characterised in that concretely comprise the following steps：
（1）Added in 24mL deionized waters, the concentrated hydrochloric acid and 2mL acetic acid mixed solutions that 22mL mass fractions are 37%
0.8mL butyl titanates, stir to solution and clarify, be then transferred to solution and be placed with the hydrothermal reaction kettle of FTO electro-conductive glass,
In 150 DEG C of hydro-thermal reaction 20h, cooled to room temperature, takes out sample clean and totally dries and obtained in 450 DEG C of annealing 30min afterwards
To the TiO that length is 3-4 μm2Nanometer stick array；
（2）By step（1）Obtained TiO2Nanometer stick array is immersed dissolved with AgNO3With the alcohol-water of polyvinylpyrrolidone
In solution, 10-50min is irradiated under ultraviolet light, and sample is then taken out into cleaning and naturally dry obtains the TiO of Ag modifications2Receive
Rice rod array；
（3）By step（2）The TiO of obtained Ag modifications2Nanometer stick array is immersed dissolved with Na230- is reacted in the solution of S and S
90min, then takes out cleaning by sample and naturally dry obtains Ag@Ag2S/TiO2Nanometer stick array.
Further preferably, step（2）Described in dissolved with AgNO3In the ethanol-water solution of polyvinylpyrrolidone
AgNO3Molar concentration be 0.5-2mmol/L, the mass concentration of polyvinylpyrrolidone is the volume ratio of 1g/L, water and ethanol
For 1:1.
Further preferably, step（3）Described in dissolved with Na2Na in the solution of S and S2The total mol concentration of S and S is
1mol/L。
The present invention utilizes Ag and Ag2The synergistic effect of S can improve absorption of the material to visible ray, improve photogenerated charge
Transmission, separative efficiency, obtain the light anode material with high light solution water efficiency, and the synthetic method craft is simple, letter
The implementing process of electrode is changed, has been conducive to mass produce.
Embodiment
The above of the present invention is described in further details by the following examples, but this should not be interpreted as to this
The scope for inventing above-mentioned theme is only limitted to following embodiment, and all technologies realized based on the above of the present invention belong to this hair
Bright scope.
Embodiment 1
（1）Added in 24mL deionized waters, the concentrated hydrochloric acid and 2mL acetic acid mixed solutions that 22mL mass fractions are 37%
0.8mL butyl titanates, stir to solution and clarify, be then transferred to solution and be placed with the hydrothermal reaction kettle of FTO electro-conductive glass,
In 150 DEG C of hydro-thermal reaction 20h, cooled to room temperature, takes out sample clean and totally dries and obtained in 450 DEG C of annealing 30min afterwards
To the TiO that length is 3-4 μm2Nanometer stick array；
（2）By step（1）Obtained TiO2Nanometer stick array immerses 100mL dissolved with AgNO3And polyvinylpyrrolidone
（PVP）Ethanol and aqueous solution in, wherein AgNO3Molar concentration be 2mmol/L, the mass concentration of PVP is 1g/L, water and second
The volume ratio of alcohol is 1:1,10min is irradiated under ultraviolet light, and sample is then taken out into cleaning and naturally dry obtains Ag modifications
TiO2Nanometer stick array；
（3）By step（2）The TiO of obtained Ag modifications2Nanometer stick array is immersed dissolved with Na2The total mol concentration of S and S is
60min is reacted in more sulphur solution of 1mol/L, sample is then taken out into cleaning and naturally dry obtains Ag@Ag2S/TiO2Nanometer rods
Array.
Embodiment 2
（1）Added in 24mL deionized waters, the concentrated hydrochloric acid and 2mL acetic acid mixed solutions that 22mL mass fractions are 37%
0.8mL butyl titanates, stir to solution and clarify, be then transferred to solution and be placed with the hydrothermal reaction kettle of FTO electro-conductive glass,
In 150 DEG C of hydro-thermal reaction 20h, cooled to room temperature, takes out sample clean and totally dries and obtained in 450 DEG C of annealing 30min afterwards
To the TiO that length is 3-4 μm2Nanometer stick array；
（2）By step（1）Obtained TiO2Nanometer stick array immerses 100mL dissolved with AgNO3With the ethanol and aqueous solution of PVP
In, wherein AgNO3Molar concentration be 1mmol/L, the mass concentration of PVP is 1g/L, and the volume ratio of water and ethanol is 1:1,
30min is irradiated under ultraviolet light, sample is then taken out into cleaning and naturally dry obtains the TiO of Ag modifications2Nanometer stick array；
（3）By step（2）The TiO of obtained Ag modifications2Nanometer stick array is immersed dissolved with Na2The total mol concentration of S and S is
30min is reacted in more sulphur solution of 1mol/L, sample is then taken out into cleaning and naturally dry obtains Ag@Ag2S/TiO2Nanometer rods
Array.
Embodiment 3
（1）Added in 24mL deionized waters, the concentrated hydrochloric acid and 2mL acetic acid mixed solutions that 22mL mass fractions are 37%
0.8mL butyl titanates, stir to solution and clarify, be then transferred to solution and be placed with the hydrothermal reaction kettle of FTO electro-conductive glass,
In 150 DEG C of hydro-thermal reaction 20h, cooled to room temperature, takes out sample clean and totally dries and obtained in 450 DEG C of annealing 30min afterwards
To the TiO that length is 3-4 μm2Nanometer stick array；
（2）By step（1）Obtained TiO2Nanometer stick array immerses 100mL dissolved with AgNO3With the ethanol and aqueous solution of PVP
In, wherein AgNO3Molar concentration be 0.5mmol/L, the mass concentration of PVP is 1g/L, and the volume ratio of water and ethanol is 1:1,
50min is irradiated under ultraviolet light, and sample is then taken out into cleaning and naturally dry obtains the TiO of Ag modifications2Nanometer stick array；
（3）By step（2）The TiO of obtained Ag modifications2Nanometer stick array is immersed dissolved with Na2The total mol concentration of S and S is
90min is reacted in more sulphur solution of 1mol/L, sample is then taken out into cleaning and naturally dry obtains Ag@Ag2S/TiO2Nanometer rods
Array.
Basic principle, main features and advantages embodiment above describes the present invention, the technical staff of the industry should
Understand, the present invention is not limited to the above embodiments, and the above embodiments and description only describe the original of the present invention
Reason, under the scope for not departing from the principle of the invention, various changes and modifications of the present invention are possible, these changes and improvements are each fallen within
In the scope of protection of the invention.
Claims (1)
- A kind of 1. Ag@Ag2S/TiO2The synthetic method of nanometer stick array, it is characterised in that concretely comprise the following steps：（1）0.8mL metatitanic acids are added in 24mL deionized waters, the concentrated hydrochloric acid of 22mL mass fractions 37% and 2mL acetic acid mixed solutions Four butyl esters, stir to solution and clarify, be then transferred to solution and be placed with the hydrothermal reaction kettle of FTO electro-conductive glass, in 150 DEG C of water Thermal response 20h, cooled to room temperature, it is 3- to take out sample clean and totally dry afterwards and obtain length in 450 DEG C of annealing 30min 4 μm of TiO2Nanometer stick array；（2）By step（1）Obtained TiO2Nanometer stick array is immersed dissolved with AgNO3With the ethanol-water solution of polyvinylpyrrolidone In, 10-50min is irradiated under ultraviolet light, and sample is then taken out into cleaning and naturally dry obtains the TiO of Ag modifications2Nanometer rods Array, it is described dissolved with AgNO3With AgNO in the ethanol-water solution of polyvinylpyrrolidone3Molar concentration be 0.5-2mmol/L, The mass concentration of polyvinylpyrrolidone is 1g/L, and the volume ratio of water and ethanol is 1:1；（3）By step（2）The TiO of obtained Ag modifications2Nanometer stick array is immersed dissolved with Na230- is reacted in the solution of S and S 90min, then takes out cleaning by sample and naturally dry obtains Ag@Ag2S/TiO2Nanometer stick array, it is described dissolved with Na2S and S Solution in Na2The total mol concentration of S and S is 1mol/L.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610833719.2A CN106549068B (en) | 2016-09-20 | 2016-09-20 | A kind of Ag@Ag2S/TiO2The synthetic method of nanometer stick array |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610833719.2A CN106549068B (en) | 2016-09-20 | 2016-09-20 | A kind of Ag@Ag2S/TiO2The synthetic method of nanometer stick array |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106549068A CN106549068A (en) | 2017-03-29 |
| CN106549068B true CN106549068B (en) | 2018-05-04 |
Family
ID=58368202
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610833719.2A Expired - Fee Related CN106549068B (en) | 2016-09-20 | 2016-09-20 | A kind of Ag@Ag2S/TiO2The synthetic method of nanometer stick array |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106549068B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108311131A (en) * | 2017-12-21 | 2018-07-24 | 安徽理工大学 | A kind of alundum (Al2O3) ultrathin membrane passivation titanic oxide nanorod array composite material and preparation method |
| CN108751738A (en) * | 2018-06-01 | 2018-11-06 | 合肥学院 | A kind of Bi2S3/TiO2Composite material nanometer stick array and preparation method |
| CN110487769A (en) * | 2019-06-28 | 2019-11-22 | 江汉大学 | A kind of preparation method and applications of titanic oxide nanorod array/argentum nano composite material |
| CN110344096B (en) * | 2019-07-26 | 2021-09-10 | 中国科学院海洋研究所 | AgSbS2Sensitized TiO2Composite membrane material and preparation and application thereof |
| CN110940718B (en) * | 2019-12-10 | 2022-04-01 | 集美大学 | Near-infrared photoelectric Ag2Preparation and test method of S @ Au cubic material |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103205760A (en) * | 2013-04-27 | 2013-07-17 | 厦门大学 | Preparation method of Ag2S/TiO2 composite film photo-anode for photoproduction cathode protection |
| CN105621349A (en) * | 2016-01-05 | 2016-06-01 | 河南师范大学 | Method for synthesizing Au and Ag co-modified TiO2 nanorod array by use of photo-reduction method |
-
2016
- 2016-09-20 CN CN201610833719.2A patent/CN106549068B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103205760A (en) * | 2013-04-27 | 2013-07-17 | 厦门大学 | Preparation method of Ag2S/TiO2 composite film photo-anode for photoproduction cathode protection |
| CN105621349A (en) * | 2016-01-05 | 2016-06-01 | 河南师范大学 | Method for synthesizing Au and Ag co-modified TiO2 nanorod array by use of photo-reduction method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106549068A (en) | 2017-03-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106549068B (en) | A kind of Ag@Ag2S/TiO2The synthetic method of nanometer stick array | |
| Prasad et al. | Recent advances in MXenes supported semiconductors based photocatalysts: Properties, synthesis and photocatalytic applications | |
| Song et al. | Enhanced photoelectrochemical response of a composite titania thin film with single-crystalline rutile nanorods embedded in anatase aggregates | |
| CN103357425B (en) | Preparation method of molybdenum disulfide/titanium dioxide composite material with nano thorn hierarchical structure | |
| CN101814375B (en) | Preparation method of nitrogen-doped titanium dioxide nano line electrode | |
| CN102002746B (en) | Method for preparing iron oxide nano granule modified titanium dioxide nano tube array | |
| CN101844077B (en) | Preparation method of carbon and nitrogen modified nano-titanium dioxide thin film with visible light activity | |
| CN104120443A (en) | Visible light layered array electrode of composite structure and preparation method thereof | |
| CN102125863A (en) | Preparation method of graphite phase carbon nitride/rutile monocrystal titanium dioxide (TiO2) nanowire array | |
| CN104874384B (en) | Preparation method of titanium dioxide thin film with micro-nano composite structure | |
| CN105347694A (en) | Branched heterogeneous hydrogenated titanium dioxide nanorod array electrode and preparation method thereof | |
| CN106540673A (en) | A kind of three-dimensional TiO2The synthetic method of/ZnO heterojunction array | |
| CN104383950B (en) | A kind of Bi2o3-BiOI hetero-junctions visible-light-responsive photocatalyst and preparation method thereof | |
| CN102701312A (en) | Method for producing hydrogen by using dye-sensitized photocatalytic fuel cell and degrading organic dye wastewater simultaneously | |
| CN101345140A (en) | Preparation method for optical anode of dye sensitization solar battery | |
| CN103050289B (en) | Two-sided DSSC of polyaniline transparent counter electrode base and its preparation method and application | |
| CN106698972A (en) | Preparation method of tungsten oxide thin film material for conductive glass matrix | |
| CN104289234B (en) | A kind of highly effective hydrogen yield photocatalyst MoS2-SrZrO3Preparation and application | |
| Yue et al. | A facile synthesis method of TiO2@ SiO2 porous core shell structure for photocatalytic hydrogen evolution | |
| CN103691420A (en) | Mesoporous niobium pentoxide/graphene compound photocatalyst prepared by one-step self-assembly method | |
| CN104857942A (en) | Cadmium sulfide sensitization hydrogenation branched titanium dioxide nanorod array membrane and light catalyst | |
| CN104087966A (en) | A preparing method of a photocatalytic electrode material for water-splitting hydrogen production | |
| Liu et al. | Photocatalytic hydrogen production over In2S3–Pt–Na2Ti3O7 nanotube films under visible light irradiation | |
| Chawla et al. | Surface modification of semiconductor photoanode for photoelectrochemical water splitting | |
| CN102249296B (en) | Hydrogen material from photocatalytic water decomposition and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20180504 Termination date: 20180920 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |