CN106549064A - The preparation of Transition-metal dichalcogenide homojunction, homogeneity junction diode and homojunction - Google Patents
The preparation of Transition-metal dichalcogenide homojunction, homogeneity junction diode and homojunction Download PDFInfo
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- CN106549064A CN106549064A CN201610885644.2A CN201610885644A CN106549064A CN 106549064 A CN106549064 A CN 106549064A CN 201610885644 A CN201610885644 A CN 201610885644A CN 106549064 A CN106549064 A CN 106549064A
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- metal dichalcogenide
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- 229910052723 transition metal Inorganic materials 0.000 title claims abstract description 101
- 150000003624 transition metals Chemical class 0.000 title claims abstract description 99
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 20
- 238000010306 acid treatment Methods 0.000 claims abstract description 19
- 239000011241 protective layer Substances 0.000 claims abstract description 7
- 238000010276 construction Methods 0.000 claims abstract description 4
- 230000008439 repair process Effects 0.000 claims abstract description 4
- 239000002994 raw material Substances 0.000 claims abstract 2
- 239000000758 substrate Substances 0.000 claims description 25
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 23
- 239000002253 acid Substances 0.000 claims description 23
- 229910052717 sulfur Inorganic materials 0.000 claims description 21
- 239000011593 sulfur Substances 0.000 claims description 21
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 16
- 229910052750 molybdenum Inorganic materials 0.000 claims description 16
- 239000011733 molybdenum Substances 0.000 claims description 16
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- -1 chalcogenide compound Chemical class 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229910052982 molybdenum disulfide Inorganic materials 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 4
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 claims description 3
- 235000019253 formic acid Nutrition 0.000 claims description 3
- 150000004965 peroxy acids Chemical class 0.000 claims description 3
- 239000011973 solid acid Substances 0.000 claims description 3
- 239000005864 Sulphur Substances 0.000 claims description 2
- 229910003090 WSe2 Inorganic materials 0.000 claims description 2
- ALTVCFKRYOLNPF-UHFFFAOYSA-N imino(trifluoromethyl)sulfanium Chemical compound FC(F)(F)[S+]=N ALTVCFKRYOLNPF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052961 molybdenite Inorganic materials 0.000 claims description 2
- 230000001590 oxidative effect Effects 0.000 claims description 2
- KVXHGSVIPDOLBC-UHFFFAOYSA-N selanylidenetungsten Chemical class [Se].[W] KVXHGSVIPDOLBC-UHFFFAOYSA-N 0.000 claims description 2
- ITRNXVSDJBHYNJ-UHFFFAOYSA-N tungsten disulfide Chemical compound S=[W]=S ITRNXVSDJBHYNJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims 1
- 229920002223 polystyrene Polymers 0.000 claims 1
- 238000000137 annealing Methods 0.000 abstract description 4
- 230000008569 process Effects 0.000 abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 7
- GKWLILHTTGWKLQ-UHFFFAOYSA-N 2,3-dihydrothieno[3,4-b][1,4]dioxine Chemical compound O1CCOC2=CSC=C21 GKWLILHTTGWKLQ-UHFFFAOYSA-N 0.000 description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 229910052711 selenium Inorganic materials 0.000 description 6
- 239000011669 selenium Substances 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 6
- 239000002135 nanosheet Substances 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 229920001609 Poly(3,4-ethylenedioxythiophene) Polymers 0.000 description 4
- 150000004770 chalcogenides Chemical class 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000007547 defect Effects 0.000 description 4
- 238000011161 development Methods 0.000 description 4
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229920000144 PEDOT:PSS Polymers 0.000 description 3
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- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
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- 230000008020 evaporation Effects 0.000 description 2
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- 229910021389 graphene Inorganic materials 0.000 description 2
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000004506 ultrasonic cleaning Methods 0.000 description 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-M Bisulfite Chemical compound OS([O-])=O LSNNMFCWUKXFEE-UHFFFAOYSA-M 0.000 description 1
- 241000218202 Coptis Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- SXMUSCUQMMSSKP-UHFFFAOYSA-N [O].C=1C=CSC=1 Chemical compound [O].C=1C=CSC=1 SXMUSCUQMMSSKP-UHFFFAOYSA-N 0.000 description 1
- ZQRRBZZVXPVWRB-UHFFFAOYSA-N [S].[Se] Chemical compound [S].[Se] ZQRRBZZVXPVWRB-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
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- 238000012512 characterization method Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 1
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- 238000001514 detection method Methods 0.000 description 1
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- 230000005611 electricity Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000007687 exposure technique Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- SEOVTRFCIGRIMH-UHFFFAOYSA-N indole-3-acetic acid Chemical compound C1=CC=C2C(CC(=O)O)=CNC2=C1 SEOVTRFCIGRIMH-UHFFFAOYSA-N 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
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- 239000002055 nanoplate Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
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- 230000005622 photoelectricity Effects 0.000 description 1
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- 239000000376 reactant Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0688—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions characterised by the particular shape of a junction between semiconductor regions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
- H01L29/66128—Planar diodes
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The present invention principally falls into homojunction preparing technical field, and in particular to a kind of Transition-metal dichalcogenide homojunction and preparation method thereof.Methods described adopts Transition-metal dichalcogenide nanometer sheet for raw material; protective layer is arranged in the top in a part of region of the Transition-metal dichalcogenide nanometer sheet to be protected; using the unprotected region of acid treatment Transition-metal dichalcogenide nanometer sheet; to repair the fault of construction of Transition-metal dichalcogenide nanometer sheet, so as to the protection in Transition-metal dichalcogenide nanometer sheet forms Transition-metal dichalcogenide homojunction with unprotected region.The structure of the homojunction prepared by the method for the invention, it is affected by environment less, show good stability, operability extremely strong, it is not necessary to high annealing, and do not need doping process.
Description
Technical field
The present invention principally falls into homojunction preparing technical field, and in particular to Transition-metal dichalcogenide homojunction, same
The preparation method of matter junction diode and homojunction.
Background technology
Compared to the less interface contact resistance that hetero-junctions, homojunction are brought with the band structure of its Perfect Matchings, more
The photoelectric transformation efficiency of few carrier traps, good rectification characteristic and superelevation, receives in fields such as electronics, optoelectronics
It is extensive to pay close attention to.On the other hand, the two-dimension nano materials since 2004 with Graphene as representative, including electronics and photoelectricity
Sub- field achieves impressive progress.
2011, B.Radisavljevic of Switzerland et al. had found the transition metal sulfur family that monolayer molybdenum bisuphide is representative
Compound, this or a kind of two-dimension nano materials of lower worth research will be become.Different from zero band gap of Graphene, with and graphite
The molybdenum bisuphide of the similar remarkable properties of alkene has forbidden band, is natural quasiconductor.Its monatomic synusia shows suitable direct
The advantageous features such as band gap, high efficiency of light absorption, stable chemical property.As the device that these features are made shows
Good performance, for example the on-off ratio of wherein molybdenum bisuphide monoatomic layer field-effect transistor be up to 108.In addition ultra-thin two dimension
Applications to nanostructures has extremely for the development of the aspect devices such as following flexible, transparent, wearable electronics and photoelectron
Great meaning.
But the existing method for building two-dimension nano materials homojunction is few, and effect is not satisfactory, it is difficult to win
Appoint the development need of following high performance device.Existing construction method can be largely classified into two classes:First, traditional doping, mainly
Show as high annealing and other atoms are inserted or replaced with material structure.This mode stability very well, but is difficult
Realize that subregion is adulterated on same material, so the building process of homojunction is only limitted to two kinds of different types of longitudinal stack and obtains
Semi-conducting material.This stacked system is not only related to the complicated technologies such as accurate transfer, and the homogeneity junction diode for preparing is all
Show that contact resistance is excessive, interface carrier defect is excessive, the low deficiency of photoelectric transformation efficiency.2nd, surface doping, its principle
It is the transfer that electric charge is realized using the chemical-electrical potential difference between semi-conducting material and dopant, it is dense so as to adjust internal carrier
Degree.But physical absorption sample surfaces dopant it is easily affected by environment come off, so as to affect stably-doped property.And adulterate
Agent is easily reacted with the active substance of surrounding, so also affecting to prepare the life-span of homojunction.
The content of the invention
For the problems referred to above, the present invention provides a kind of Transition-metal dichalcogenide homojunction preparation method.Methods described
A high annealing and unstable chemical doping that can break away from complexity is aimed to provide, simple and feasible homojunction builds new way.
The structure of the homojunction prepared by the method for the invention, it is affected by environment less, show good stability, can
Operability is extremely strong, it is not necessary to high annealing, and does not need doping process.
The present invention is achieved by the following technical solutions：
A kind of preparation method of Transition-metal dichalcogenide homojunction, adopts Transition-metal dichalcogenide nanometer sheet for former
Material, protects to a part of region of the Transition-metal dichalcogenide nanometer sheet, to the transition metal sulfur family chemical combination
The unprotected region of thing nanometer sheet carries out acid treatment to repair the fault of construction of Transition-metal dichalcogenide nanometer sheet, in mistake
The protected area and unprotected region for crossing metal chalcogenide compound nanometer sheet forms Transition-metal dichalcogenide homojunction.
Further, the method comprising the steps of：
（1）Substrate is successively put in acetone, ethanol, three kinds of solution of deionized water, it is each in every kind of solution to be cleaned by ultrasonic 8-10
After minute, take out, nitrogen is dried up；
（2）Prepare Transition-metal dichalcogenide nanometer sheet；Using mechanical stripping method, chemical vapour deposition technique or liquid phase intercalation method
It is prepared；
（3）By step（2）The Transition-metal dichalcogenide nanometer sheet for preparing is transferred to step（1）Substrate after cleaning
On, obtain the Transition-metal dichalcogenide nanometer sheet with substrate；
（4）A part of region of Transition-metal dichalcogenide nanometer sheet is protected so that protected area is not by acid treatment
Affect, acid treatment is carried out to the unprotected region of the Transition-metal dichalcogenide nanometer sheet, transition metal is prepared
Chalcogenide homojunction.
Further, step（4）Specially：In the upper of a part of region of the Transition-metal dichalcogenide nanometer sheet
Build protective layer in side；By step（3）Transition-metal dichalcogenide nanometer sheet with substrate is immersed in 20- in acid solution
30min, then deionized water cleaning, prepares Transition-metal dichalcogenide homojunction.
Further, step（4）Specially：A part of region of the Transition-metal dichalcogenide nanometer sheet is carried out
It is hanging to protect, the region that Transition-metal dichalcogenide nanometer sheet is not suspended is immersed in into 20-30min in acid solution, then
Deionized water is cleaned, and prepares Transition-metal dichalcogenide homojunction.
Further, step（4）Specially：By a part of region of the Transition-metal dichalcogenide nanometer sheet with it is solid
To carry out acid treatment, the part not contacted with solid acid of Transition-metal dichalcogenide nanometer sheet is protection zone for body acid contact
Domain, prepares Transition-metal dichalcogenide homojunction.
Further, in step（2）In, the Transition-metal dichalcogenide nanometer sheet for preparing is molybdenum bisuphide MoS2
Nanometer sheet, two selenizing molybdenum MoSe2Nanometer sheet, tungsten disulfide WS2Nanometer sheet or two tungsten selenides WSe2Nanometer sheet, the transition metal
The thickness of chalcogenide nanometer sheet is 0.01nm-100nm.
Further, in step（5）During acid treatment is repaired, the acid for using is non-oxidizing acid, specially bis trifluoromethyl
Sulfimide, hydracid, polystyrolsulfon acid, formic acid or acetic acid.
A kind of Transition-metal dichalcogenide homojunction, the homojunction include a substrate, a transition metal sulfur family chemical combination
Thing nanometer sheet, the Transition-metal dichalcogenide nanometer sheet include protected area and unprotected region, described to be protected
Transition metal sulfur family of the Transition-metal dichalcogenide nanometer sheet in region without peracid treatment, in the unprotected region
Compound nano piece is through acid treatment.
A kind of Transition-metal dichalcogenide homogeneity junction diode, the homogeneity junction diode include the homojunction,
In the homogeneity junction diode, an electrode is respectively arranged with the both sides of the homojunction.
The Advantageous Effects of the present invention：
The method of the invention makes full use of the intrinsic defect of two-dimensional material Transition-metal dichalcogenide nanometer sheet, and which is intrinsic scarce
Fall into and mainly show sulfur (selenium) room, this defect makes which carry many electronics, shows n（p）The feature of type quasiconductor；Simultaneously
Transition-metal dichalcogenide nanometer sheet there is also sulfur（Selenium）Cluster, this point are also obtained by characterization methods such as STM in recent years
Abundant confirmation is arrived.As two-dimensional material sample is relatively thin, whole sample can be made to be subject to equivalent effect using acid treatment.Acid treatment
Sulfur can be cut off（Selenium）Cluster and sample surfaces sulfur（Selenium）The connection of atom, and the sulfur for being sheared off（Selenium）Cluster is easily by surrounding
The capture of sulfur room, and then fill up reparation sulfur（Selenium）Room.Sulfur（Selenium）The reparation in room shows defect and reduces and electron concentration
Reduce, just occur that electron concentration is poor at acid treatment with untreated boundary line, show the difference of fermi level, so as to
Form a homojunction.
Meanwhile, the interface resistance of the homojunction prepared using the method for the invention is minimum, and energy band is matched completely, because
The i-v curve of this homojunction can show preferable rectification characteristic.
The homogeneity junction diode that the present invention is provided is a kind of photodiode, compared to no built in field（Homojunction or
A kind of electric field that schottky junction is produced）Transition-metal dichalcogenide phototransistor；During illumination, transition in homogeneity junction diode
Metal chalcogenide compound nanometer sheet absorbing light, electronics from valence to conduction band, so as to produce photo-generate electron-hole pair, in homogeneity
In the presence of knot built in field, electron hole is rapidly separated, such that it is able to improve photoelectric transformation efficiency；.In homojunction two ends Europe
Nurse electrode formed electrical return in, show photoelectric current, realize optical detection and photovoltaic effect, be following solaode, from
The development of photodetector is driven to lay a good foundation.
Heretofore described Transition-metal dichalcogenide nanometer sheet is two-dimensional material simultaneously, with ultra-slim features, is had
Compared with high-flexibility and transparency, in the application of following next generation's high-performance flexible, transparent, wearable electronics and photoelectric device,
Its advantage is unrivaled.
Description of the drawings
Fig. 1 is a kind of structural representation of Transition-metal dichalcogenide homogeneity junction diode；
Fig. 2 is a kind of structural representation of Transition-metal dichalcogenide homogeneity junction diode；
Current -voltage curves of the Fig. 3 for the homogeneity junction diode in embodiment three；
Reference：1. electrode, 2. protective layer.3. Transition-metal dichalcogenide nanometer sheet, 4. substrate, 5. acid, 6. electrode with
Sour community, 7. channel layer.
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, it is below in conjunction with drawings and Examples, right
The present invention is explained in further detail.It should be appreciated that specific embodiment described herein is used only for explaining the present invention, and
It is not used in the restriction present invention.
Conversely, the present invention covers any replacement done in the spirit and scope of the present invention being defined by the claims, repaiies
Change, equivalent method and scheme.Further, in order that the public has a better understanding to the present invention, below to the thin of the present invention
It is in section description, detailed to describe some specific detail sections.Part without these details for a person skilled in the art
Description can also understand the present invention completely.
Embodiment 1
A kind of preparation method of Transition-metal dichalcogenide homojunction, specifically includes following steps：
（1）Cleaning silicon dioxide substrate：The silicon dioxide substrate of 2.5*2.5cm is successively put into into acetone, ethanol, deionized water,
In each solution after the ultrasonic cleaning of each 10 minutes, take out, nitrogen is dried up；
（2）Chemical vapor deposition growth monolayer molybdenum bisuphide, with sulphur powder and molybdenum trioxide as reactant, prepares deposition at 860 DEG C
To step（1）Silica surface after cleaning, obtains the molybdenum disulfide nano sheet with substrate；The monolayer molybdenum bisuphide of formation
For equilateral triangle, about 100 microns of the equilateral triangle length of side；
（3）Build protective layer：In the top spin coating PMMA glue of the molybdenum disulfide nano sheet with substrate（Protective layer）, then electricity consumption
Beamlet exposure technique exposes the half region of molybdenum disulfide nano sheet（Unprotected region）, after developer solution development in 50 seconds, nitrogen blows
It is dry；
The Transition-metal dichalcogenide nanometer sheet after protective layer will be built and be immersed in 30min in the HCl solution of 0.1mol/L（Can
Cleaned with deionized water, remove HCl solution, it is also possible to without removing HCl solution）, prepare transition metal sulfur family chemical combination
Thing homojunction.
A kind of Transition-metal dichalcogenide homojunction, the homojunction include a substrate, a transition metal sulfur family chemical combination
Thing nanometer sheet, the Transition-metal dichalcogenide nanometer sheet include protected area and unprotected region, described to be protected
Without peracid treatment, the unprotected region is the mistake through acid treatment to Transition-metal dichalcogenide nanometer sheet in region
Cross metal nano plate.
A kind of Transition-metal dichalcogenide homogeneity junction diode, as shown in figure 1, the homogeneity junction diode include it is above-mentioned
Homojunction, in the homogeneity junction diode, bottommost is substrate 4, is a Transition-metal dichalcogenide above the substrate 4
Nanometer sheet 3, includes protected area and unprotected region, is protected above the Transition-metal dichalcogenide nanometer sheet 3
The top in region arranges matcoveredn 2, and the unprotected overlying regions contain remaining sour 5 after acid treatment.The transition gold
The two ends of category chalcogenide nanometer sheet 3 are respectively provided with an electrode 1.
The preparation method of the Transition-metal dichalcogenide homogeneity junction diode, specifically includes following steps：
（1）Prepare homojunction：With above-mentioned steps（1）-（4）It is identical；
（2）The deposition of electrode：The spin coating PMMA glue in the Transition-metal dichalcogenide homojunction for preparing, 180 DEG C, 1min
Process, after drying, under the auxiliary of electron beam lithography, expose figure, using hot evaporation depositing electrode, last acetone heating leaching
Bubble removes PMMA glue；Prepare Transition-metal dichalcogenide homogeneity junction diode.
Embodiment 2
A kind of preparation method of Transition-metal dichalcogenide homojunction, specifically includes following steps：
（1）Cleaning silicon dioxide substrate：Two selenizing molybdenio bottoms are successively put into into acetone, ethanol, deionized water, in each solution
After the ultrasonic cleaning of each 10 minutes, take out, nitrogen is dried up；
（2）Two selenizing molybdenum of chemical vapor deposition growth monolayer：Passing through chemical vapor deposition to step（1）Titanium dioxide after cleaning
Silicon face, obtains the two selenizing molybdenum nanometer sheet with substrate；
（3）A part of region of the two selenizings molybdenum nanometer sheet is vacantly protected, by Transition-metal dichalcogenide nanometer
The region that piece is not suspended is immersed in 20-30min in formic acid solution, and then deionized water cleaning, prepares transition metal
Chalcogenide homojunction.
Embodiment 3
A kind of preparation method of Transition-metal dichalcogenide homogeneity junction diode, specifically includes following steps：
（1）In the substrate of silicon dioxide, poly- 3,4-ethylene dioxythiophene/polystyrolsulfon acid is made using suitable means
（PEDOT:PSS）Patterning；The patterning techniques can adopt uv-exposure technology or laser interference.
（2）Make molybdenum disulfide nano sheet be transferred to target substrate using the transfer of traditional PMMA wet methods, do for 60 DEG C during this
It is dry to heat to remove deionized water；Auxiliary realizes acid treatment reparation；
（3）Using electron beam lithography, uv-exposure be ultraviolet or gold thread method approach, and combine electron beam evaporation plating and hot evaporation is heavy
Product electrode, prepares Transition-metal dichalcogenide homogeneity junction diode.
A kind of Transition-metal dichalcogenide homogeneity junction diode, is obtained by above-mentioned preparation method, the transition metal
Shown in structure Fig. 2 of chalcogenide homogeneity junction diode, the homogeneity junction diode includes substrate 4, the ditch in substrate
Channel layer 7, positioned at electrode and the sour community 6 of 7 lower left of channel layer, and the electrode 1 on the right of channel layer, the channel layer
7 material is two-dimentional molybdenum disulfide nano sheet.
Wherein, 4 material of substrate is silicon dioxide, and electrode is PEDOT with the community 6 of acid：:PSS（That is poly- 3,4- ethylenes two
Oxygen thiophene/polystyrolsulfon acid）Thin film, the material of electrode 1 is chromium gold.
Poly- 3,4-ethylene dioxythiophene/polystyrolsulfon acid PEDOT:PSS structures are a kind of unique nucleocapsid structure, poly- 3,
4- ethylenedioxy thiophenes PEDOT be core, polystyrolsulfon acid PSS be shell, wherein polystyrolsulfon acid PSS be a kind of sulfonic acid, two
Molybdenum sulfide nanometer sheet is directly contacted with polystyrolsulfon acid PSS, and PSS can repair molybdenum bisuphide surface sulfur sky under certain condition
Position.Poly- 3,4-ethylene dioxythiophene PEDOT electric conductivity is strong, therefore poly- 3,4-ethylene dioxythiophene/polystyrolsulfon acid PEDOT:PSS
A metal electrode can also be replaced.Poly- 3,4-ethylene dioxythiophene/polystyrolsulfon acid the PEDOT of patterning：PSS thin film
Simultaneously ensure that molybdenum bisuphide surface can't full wafer be all subject to processing, but region is repaired, so as to realize the area of molybdenum bisuphide
Domain property is repaired.Polystyrolsulfon acid PSS is not a kind of especially strong acid, workable.
Fig. 3 is the current -voltage curve of homogeneity junction diode in the present embodiment；From the curve：It is non-by the figure curve
Linear Ohmic contact, but obvious diode rectification characteristic is carried, successfully construct two sulfur so as to illustrate that is repaired in acid
Change molybdenum homojunction.
Claims (9)
1. a kind of preparation method of Transition-metal dichalcogenide homojunction, it is characterised in that using transition metal sulfur family chemical combination
Thing nanometer sheet is raw material, a part of region of the Transition-metal dichalcogenide nanometer sheet is protected, to the transition
The unprotected region of metal chalcogenide compound nanometer sheet carries out acid treatment to repair Transition-metal dichalcogenide nanometer sheet
Fault of construction, forms transition metal sulfur family with unprotected region in the protected area of Transition-metal dichalcogenide nanometer sheet
Compound homojunction.
2. the preparation method of Transition-metal dichalcogenide homojunction according to claim 1, it is characterised in that methods described
Comprise the following steps：
（1）Substrate is successively put in acetone, ethanol, three kinds of solution of deionized water, it is each in every kind of solution to be cleaned by ultrasonic 8-10
After minute, take out, nitrogen is dried up；
（2）Prepare Transition-metal dichalcogenide nanometer sheet；
（3）By step（2）The Transition-metal dichalcogenide nanometer sheet for preparing is transferred to step（1）Substrate after cleaning
On, obtain the Transition-metal dichalcogenide nanometer sheet with substrate；
A part of region of Transition-metal dichalcogenide nanometer sheet is protected so that protected area is not by acid treatment shadow
Ring, acid treatment is carried out to the unprotected region of the Transition-metal dichalcogenide nanometer sheet, Transition Metal Sulfur is prepared
Compounds of group homojunction.
3. the preparation method of Transition-metal dichalcogenide homojunction according to claim 2, it is characterised in that step（4）
Specially：Protective layer is built above a part of region of the Transition-metal dichalcogenide nanometer sheet；By step（3）Band
The Transition-metal dichalcogenide nanometer sheet for having substrate is immersed in 20-30min in acid solution, prepares transition metal sulfur family
Compound homojunction.
4. the preparation method of Transition-metal dichalcogenide homojunction according to claim 2, it is characterised in that step（4）
Specially：A part of region of the Transition-metal dichalcogenide nanometer sheet is vacantly protected, by transition metal sulfur family
The region that compound nano piece is not suspended is immersed in 20-30min in acid solution, and then deionized water cleaning, prepares
Transition-metal dichalcogenide homojunction.
5. the preparation method of Transition-metal dichalcogenide homojunction according to claim 2, it is characterised in that step（4）
Specially：A part of region of the Transition-metal dichalcogenide nanometer sheet is contacted to carry out acid treatment, mistake with solid acid
The part not contacted with solid acid for crossing metal chalcogenide compound nanometer sheet is protection zone, prepares transition metal sulfur family
Compound homojunction.
6. the preparation method of Transition-metal dichalcogenide homojunction according to claim 2, it is characterised in that in step
（2）In, the Transition-metal dichalcogenide nanometer sheet for preparing is molybdenum bisuphide MoS2Nanometer sheet, two selenizing molybdenum MoSe2Nanometer
Piece, tungsten disulfide WS2Nanometer sheet or two tungsten selenides WSe2Nanometer sheet, the thickness of the Transition-metal dichalcogenide nanometer sheet is
0.01nm-100nm。
7. the preparation method of Transition-metal dichalcogenide homojunction according to claim 2, it is characterised in that in step
（5）During acid treatment is repaired, the acid for using is non-oxidizing acid, specially bis trifluoromethyl sulfimide, hydracid, polystyrene sulphur
Acid, formic acid or acetic acid.
8. a kind of Transition-metal dichalcogenide homojunction, it is characterised in that the homojunction includes a substrate, a transition metal
Chalcogenide nanometer sheet, the Transition-metal dichalcogenide nanometer sheet include protected area and unprotected region, institute
State transition of the Transition-metal dichalcogenide nanometer sheet in protected area without peracid treatment, in the unprotected region
Metal chalcogenide compound nanometer sheet is through acid treatment.
9. a kind of Transition-metal dichalcogenide homogeneity junction diode, the homogeneity junction diode include same described in claim 8
Matter is tied, it is characterised in that in the homogeneity junction diode, be respectively arranged with an electrode in the both sides of the homojunction.
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