CN106548968A - A kind of semi-finished product wafer and prepare the interim bonding method of semi-finished product wafer - Google Patents
A kind of semi-finished product wafer and prepare the interim bonding method of semi-finished product wafer Download PDFInfo
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- CN106548968A CN106548968A CN201610971922.6A CN201610971922A CN106548968A CN 106548968 A CN106548968 A CN 106548968A CN 201610971922 A CN201610971922 A CN 201610971922A CN 106548968 A CN106548968 A CN 106548968A
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- Prior art keywords
- wafer
- slide glass
- function
- seam crossing
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Adhesives Or Adhesive Processes (AREA)
Abstract
The invention discloses a kind of interim bonding method of semi-finished product wafer, it comprises the following steps：S1, by being bonded glue by function wafer and slide glass wafer bonding；S2, in the circumferentially arranged thin layer of seam crossing of function wafer and slide glass wafer, for isolating bonding glue and external environment condition.The present invention provides a kind of interim bonding method of semi-finished product wafer, which can be very good to completely cut off external environment condition for the erosion of bonding glue by setting up thin layer, therefore the chemical resistance in wafer fabrication processes is good, simultaneously because the setting of thin layer, therefore can reduce for the requirement of bonding glue chemical resistance, which in solution bonding process can realize being bonded glue decomposition rapidly and efficiently, be finally reached the purpose of quick solution bonding.
Description
Technical field
The present invention relates to microelectronic technical field, specifically a kind of semi-finished product wafer and facing for semi-finished product wafer is prepared
When bonding method.
Background technology
With the development of electron trade, electronic chip is already towards microminiaturization trend development.And wafer is used as electronic chip
Core component, its size is inevitable as the demand in market further reduces, and the concept of ultra-thin wafers is thus formed in industry,
I.e. thickness is less than or equal to less than 100 microns of wafer, and for such ultra-thin wafers, with the decline of thickness, its course of processing must
A series of technical barrier, such as fragmentation, chipping etc. can so be produced.In order to the processing for realizing ultra-thin wafers is adopted in industry
Solution is the back side ephemeral key unification slide glass in semi-finished product wafer to be processed, for improving the intensity of wafer, in wafer
Solution is carried out with slide glass after completing processing to be bonded, is thus completed for the processing of semi-finished product wafer.
But during the interim bonding of existing this wafer and slide glass, which is for the bonding glue that ephemeral key is shared
There is following contradiction point in chemical property：First, above-mentioned bonding glue needs to have preferable chemical resistance, in order to resist wafer
Exogenous chemical reagent in the course of processing is for the corrosion of bonding glue, such as chemical reagent of etching work procedure, simultaneously as wafer
Need to carry out solution with slide glass after machining to be bonded, therefore and need to be bonded glue and be easily cleaned agent dissolving cleaning, in simple terms,
Above-mentioned bonding glue needs to have good chemical resistance in wafer fabrication processes, and can be quick after wafer completes processing
By chemical reagent dissolve, so as to realize wafer and slide glass solution be bonded.It is not difficult to find out, it is above-mentioned for bonding glue chemical resistance
There is contradiction in requirement, therefore bonding glue of the prior art can only be compromised selection.That is, the part chemical resistance for sacrificing bonding glue is come
Reach the purpose of quick dissolving cleaning in solution bonding process.
The content of the invention
The technical problem to be solved is：A kind of interim bonding method of semi-finished product wafer is provided, which passes through to increase
If thin layer can be very good to completely cut off external environment condition for the erosion of bonding glue, therefore the chemical resistance in wafer fabrication processes
It is good, simultaneously because the setting of thin layer, therefore can reduce for the requirement of bonding glue chemical resistance, which is in solution bonding process
Can realize being bonded glue decomposition rapidly and efficiently, be finally reached the purpose of quick solution bonding.
The technical solution used in the present invention is：A kind of interim bonding method of semi-finished product wafer is provided, it is characterised in that：
It comprises the following steps：
S1, by being bonded glue by function wafer and slide glass wafer bonding；
S2, in the circumferentially arranged thin layer of seam crossing of function wafer and slide glass wafer, for isolating bonding glue and outer
Portion's environment.
Step S2 includes：
Step X1, the protection that a liquid is circumferentially coated on the outer surface of function wafer or the nearly seam crossing of slide glass wafer
Agent；
Step X2, the protective agent to liquid apply the active force towards the movement of seam crossing position；
Step X3, connect when the liquid protective agent on function wafer or slide glass wafer extends to closure towards seam crossing position
When at seam, solidified protection dosage form is into a thin layer.
Step X0 is provided with before described step X1, slide glass wafer is placed together with function wafer level；
And the protective agent in step X1 is coated on the function wafer above seam crossing or slide glass wafer；
And the active force in step X3 is gravity.
Step S2 includes：
Step Y1, slide glass wafer is placed on a workbench together with function wafer, the workbench is provided with mechanical arm, machine
One brush is installed on tool arm, the brush of brush extends to position at proximity seam, and the mechanical arm is together with mechanical arm
Between brush and workbench along slide glass wafer circumferentially opposed rotation；
Step Y2, the protective agent that liquid is attached with brush, and brush touched with seam crossing；
Step Y3, brush are at least rotated one week in workbench along the circumferentially opposed of slide glass wafer, and liquid protective agent is with brush
Head is applied on seam crossing；
Protective agent on step Y4, solidification seam crossing.
Step S2 includes：
Step Z1, slide glass wafer is placed on a workbench together with function wafer, the workbench is provided with a nozzle, institute
State the seam crossing of nozzle direction-pointing function wafer or slide glass wafer；
Step Z2, the protective agent Jing nozzles of liquid are sprayed in seam crossing, and nozzle is relative on workbench and workbench
Slide glass wafer and function wafer circumferentially rotate.
After above structure, a kind of interim bonding method of semi-finished product wafer of the present invention has compared with prior art
Advantages below：It is possible, firstly, to reduce being bonded glue for the requirement of chemical resistance, therefore the species that can be selected is more wide in range, its
It is secondary, bonding glue is contacted with lytic agent by abolishing thin layer, solution bonding process is simple, and can due to being bonded glue
With from the weak species of chemical resistance, therefore solve bonding process more rapidly and efficiently.
Another technical problem to be solved by this invention is：A kind of semi-finished product wafer is provided, which passes through thin layer can be with
Glue and external environs are bonded in making the course of processing, therefore chemical resistance is good, while thin layer is abolished in solution bonding process
After bonding glue is directly contacted with lytic agent, realize rapidly and efficiently solution bonding.
The technical solution used in the present invention is：A kind of semi-finished product wafer is provided, it includes slide glass wafer and function wafer,
It is provided between the function wafer and slide glass wafer and is bonded glue, for key function wafer and slide glass wafer, it is characterised in that：Institute
A thin layer is externally provided between the function wafer stated and slide glass wafer and positioned at glue is bonded, for isolating bonding glue and external rings
Border.
After above structure, a kind of interim bonding method of semi-finished product wafer of the present invention has compared with prior art
Advantages below：Which can be very good the corrosion for completely cutting off outside agent in process, and chemical resistance is good, while machining
Solution bonding process afterwards can make the dissolving rapidly and efficiently of bonding glue again, therefore high in machining efficiency, and course of processing chemical resistance is good.
Description of the drawings
Fig. 1 is a kind of semi-finished product wafer of the present invention and prepares the flow process signal of the interim bonding method of semi-finished product wafer
Figure.
Fig. 2 is the close-up schematic view in " A " region in Fig. 1.
Fig. 3 is the schematic flow sheet of the first processing mode of step S2 in Fig. 1.
Fig. 4 is the schematic flow sheet of second processing mode of step S2 in Fig. 1.
Fig. 5 is the schematic flow sheet of the third processing mode of step S2 in Fig. 1.
Wherein, 1, bonding glue, 2, function wafer, 3, slide glass wafer, 4, thin layer, 5, workbench, 6, mechanical arm, 7, brush
Son, 8, nozzle.
Specific embodiment
The invention will be further described with reference to the accompanying drawings and detailed description.
The present invention provides a kind of interim bonding method of semi-finished product wafer, it is characterised in that：It comprises the following steps：
S1, by be bonded glue 1 function wafer 2 and slide glass wafer 3 are bonded；
S2, in the circumferentially arranged thin layer 4 of seam crossing of function wafer 2 and slide glass wafer 3, for isolating bonding glue 1
And external environment condition.
At above-mentioned seam crossing gap proximal edge positioned there between after referring to after 3 note of function wafer 2 and slide glass wafer
Part, due to function wafer 2 and slide glass wafer 3 laminating the latter two between be provided with bonding glue 1, therefore therebetween formed between
Gap, and be bonded glue and be placed in center, the annular gap that its edge is formed is the seam crossing described in the present invention.
Above-mentioned external environment condition refers to, the gap for housing bonding glue formed between function wafer 2 and slide glass wafer 3
Region in addition.That is, thin layer 4, function wafer 2 and slide glass wafer 3 surround to be formed one for house be bonded glue it is close
Gap is closed, and the space beyond being located at this closed gap is external environment condition.
Specific embodiment one：
Step S2 includes：
Step X1, the protection that a liquid is circumferentially coated on the outer surface of 3 nearly seam crossing of function wafer 2 or slide glass wafer
Agent；
Step X2, the protective agent to liquid apply the active force towards the movement of seam crossing position；Described active force
Can be an active force of the active force of natural environment presence, such as gravity, capillary force, or artificial applying, for example
The gas pressure power of generation is blown using air-flow.
Step X3, closure is extended to towards seam crossing position when the liquid protective agent on function wafer 2 or slide glass wafer 3
During seam crossing, solidified protection dosage form is into a thin layer 4.
Step X0 is provided with before described step X1, by slide glass wafer 3 together with 2 horizontal positioned of function wafer；
And the protective agent in step X1 is coated on the function wafer 2 above seam crossing or slide glass wafer 3；
And the active force in step X3 is gravity.
Specific embodiment two：
Step S2 includes：
Step Y1, slide glass wafer 3 is placed on a workbench 5 together with function wafer 2, the workbench 5 is provided with machinery
Arm 6, is provided with a brush 7 on mechanical arm 6, the brush of brush extends to position at proximity seam, and the mechanical arm 6 is together with machine
Between brush 7 and workbench 5 on tool arm 6 along slide glass wafer 3 circumferentially opposed rotation；
Above-mentioned relative rotation can make mechanical arm 6 have enough to meet the need around workbench 5, or workbench around own axes week
Turn, its object is to make the brush 7 in installing arm 6 move relative to the seam crossing of the wafer on workbench.
Step Y2, the protective agent that liquid is attached with brush, and brush touched with seam crossing；
Step Y3, brush are at least rotated one week in workbench 5 along the circumferentially opposed of slide glass wafer 3, and liquid protective agent with
Brush is applied on seam crossing；
Protective agent on step Y4, solidification seam crossing.
Above-mentioned brush should not necessarily be limited to conventional hairbrush, this is fixed on mechanical arm and with suction in the present invention
The part of the soft head of attached liquid state protective agent is defined as brush and brush to be understood for the ease of reader, and this of the present invention
Design core is that a connecting portion is fixedly installed on mechanical arm, and the front end of connecting portion is provided with soft head, is adsorbed on soft head
Liquid protective agent, is touched with seam crossing from there through soft head, makes the indwelling of operative liquid protective liquid in seam crossing, so as to be formed
Thin layer.
Specific embodiment three：
Step S2 includes：
Step Z1, slide glass wafer 3 is placed on a workbench 5 together with function wafer 2, the workbench 5 is provided with a spray
The seam crossing of mouth 8,8 direction-pointing function wafer 2 of the nozzle or slide glass wafer 3；
Step Z2, the protective agent Jing nozzles 8 of liquid are sprayed in seam crossing, and nozzle 8 is relative to workbench 5 and workbench
Slide glass wafer 3 and function wafer 2 on 5 is circumferentially rotated.Above-mentioned nozzle 8 can select commercially available miniature jet nozzle, nozzle 8
Being installed in frame the relative rotation realized with workbench 5, i.e. frame drives nozzle 8 to rotate, or work around workbench 5
5 autobiography of platform.
The above-mentioned protective agent for forming thin layer 4 can select following several existing products：
1), in Zhejiang nano-crystal microelectronics Science and Technology Ltd. production model Z-Bond 601 product, for resisting
The corrosion of Acetone acetone and nmp solvent；
2), the product of U.S. Brewer Sciences company BrewerBond 220, for resisting NMP and acetone solvent
Corrosion；
3), the product of model BrewerBond 305 of U.S. Brewer Sciences companies production, for resisting
The corrosion of NMP and acetone solvent；
4), the product of the model HD3007 non-lithographic polyimide of U.S. Dupont E.I.Du Pont Company production, for resisting
The corrosion of Cyclopentanone cyclopentanone solvents；
The difference of the source of corrosion i.e. according to existing for client's subsequent production process can select different types of protective agent, from
And the function wafer and slide glass wafer for alloing bonding good keeps complete, following process is passed through, such as whole lithographic process.
A kind of semi-finished product wafer being prepared from based on said method, it includes slide glass wafer 3 and function wafer 2, described
It is provided between function wafer 2 and slide glass wafer 3 and is bonded glue 1, for key function wafer 2 and slide glass wafer 3, it is characterised in that：
A thin layer 4 is externally provided between described function wafer 2 and slide glass wafer 3 and positioned at glue 1 is bonded, for isolating bonding 1 He of glue
External environment condition.
, after the process processing such as thinning or etching is completed, its solution bonding process can be by physics for above-mentioned semi-finished product wafer
Means such as sharp object abolishes thin layer so that bonding glue exposes, or utilizes chemical means dissolving films layer so that bonding
Glue exposes (such as lytic agent that protective agent is specifically configured).
Above preferred embodiments of the present invention are described, but are not to be construed as limiting the scope of the invention.This
Bright to be not only limited to above example, its concrete structure allows to change, all institutes in the protection domain of demand for independence of the present invention
The various change of work is within the scope of the present invention.
Claims (6)
1. a kind of interim bonding method of semi-finished product wafer, it is characterised in that：It comprises the following steps：
S1, by being bonded glue by function wafer and slide glass wafer bonding；
S2, in the circumferentially arranged thin layer of seam crossing of function wafer and slide glass wafer, for isolating bonding glue and external rings
Border.
2. the interim bonding method of a kind of semi-finished product wafer according to claim 1, it is characterised in that：The step S2 bag
Include：
Step X1, the protective agent that a liquid is circumferentially coated on the outer surface of function wafer or the nearly seam crossing of slide glass wafer；
Step X2, the protective agent to liquid apply the active force towards the movement of seam crossing position；
Step X3, closure seam crossing is extended to towards seam crossing position when the liquid protective agent on function wafer or slide glass wafer
When solidified protection dosage form into a thin layer.
3. the interim bonding method of a kind of semi-finished product wafer according to claim 2, it is characterised in that：Described step X1
Step X0 is provided with before, slide glass wafer is placed together with function wafer level；
And the protective agent in step X1 is coated on the function wafer above seam crossing or slide glass wafer；
And the active force in step X3 is gravity.
4. the interim bonding method of a kind of semi-finished product wafer according to claim 1, it is characterised in that：The step S2 bag
Include：
Step Y1, slide glass wafer is placed on a workbench together with function wafer, the workbench is provided with mechanical arm, mechanical arm
On a brush is installed, the brush of brush extends to position at proximity seam, and the mechanical arm is together with the brush on mechanical arm
Between workbench along slide glass wafer circumferentially opposed rotation；
Step Y2, the protective agent that liquid is attached with brush, and brush touched with seam crossing；
Step Y3, brush are at least rotated one week in workbench along the circumferentially opposed of slide glass wafer, and liquid protective agent is applied with brush
Smear on seam crossing；
Protective agent on step Y4, solidification seam crossing.
5. the interim bonding method of a kind of semi-finished product wafer according to claim 1, it is characterised in that：The step S2 bag
Include：
Step Z1, slide glass wafer is placed on a workbench together with function wafer, the workbench is provided with a nozzle, the spray
The seam crossing of mouth direction-pointing function wafer or slide glass wafer；
Step Z2, the protective agent Jing nozzles of liquid are sprayed in seam crossing, and nozzle is relative to the load on workbench and workbench
Wafer and function wafer are circumferentially rotated.
6. the semi-finished product wafer that a kind of method based on claim 1 is prepared from, it includes slide glass wafer and function wafer, institute
State to be provided between function wafer and slide glass wafer and be bonded glue, for key function wafer and slide glass wafer, it is characterised in that：It is described
Function wafer and slide glass wafer between and be located at and be bonded glue and be externally provided with a thin layer, be bonded glue and external environment condition for isolation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610971922.6A CN106548968A (en) | 2016-11-07 | 2016-11-07 | A kind of semi-finished product wafer and prepare the interim bonding method of semi-finished product wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610971922.6A CN106548968A (en) | 2016-11-07 | 2016-11-07 | A kind of semi-finished product wafer and prepare the interim bonding method of semi-finished product wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106548968A true CN106548968A (en) | 2017-03-29 |
Family
ID=58395445
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610971922.6A Pending CN106548968A (en) | 2016-11-07 | 2016-11-07 | A kind of semi-finished product wafer and prepare the interim bonding method of semi-finished product wafer |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1806321A (en) * | 2003-06-24 | 2006-07-19 | 统合材料股份有限公司 | Plasma spraying for joining silicon parts |
| US20100255682A1 (en) * | 2009-04-01 | 2010-10-07 | Tokyo Electron Limited | Method for thinning a bonding wafer |
| US20130328174A1 (en) * | 2012-06-06 | 2013-12-12 | International Business Machines Corporation | Edge Protection of Bonded Wafers During Wafer Thinning |
| CN103995377A (en) * | 2013-02-18 | 2014-08-20 | 群创光电股份有限公司 | Display panel manufacturing method and system |
-
2016
- 2016-11-07 CN CN201610971922.6A patent/CN106548968A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1806321A (en) * | 2003-06-24 | 2006-07-19 | 统合材料股份有限公司 | Plasma spraying for joining silicon parts |
| US20100255682A1 (en) * | 2009-04-01 | 2010-10-07 | Tokyo Electron Limited | Method for thinning a bonding wafer |
| US20130328174A1 (en) * | 2012-06-06 | 2013-12-12 | International Business Machines Corporation | Edge Protection of Bonded Wafers During Wafer Thinning |
| CN103995377A (en) * | 2013-02-18 | 2014-08-20 | 群创光电股份有限公司 | Display panel manufacturing method and system |
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Application publication date: 20170329 |