CN106533196B - Frequency changer circuit and its deviation suppressing method with the full PAM control mode of interleaving mode - Google Patents
Frequency changer circuit and its deviation suppressing method with the full PAM control mode of interleaving mode Download PDFInfo
- Publication number
- CN106533196B CN106533196B CN201611165667.2A CN201611165667A CN106533196B CN 106533196 B CN106533196 B CN 106533196B CN 201611165667 A CN201611165667 A CN 201611165667A CN 106533196 B CN106533196 B CN 106533196B
- Authority
- CN
- China
- Prior art keywords
- insulated gate
- gate bipolar
- bipolar transistor
- capacitor
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M5/00—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases
- H02M5/40—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc
- H02M5/42—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters
- H02M5/44—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac
- H02M5/453—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal
- H02M5/458—Conversion of ac power input into ac power output, e.g. for change of voltage, for change of frequency, for change of number of phases with intermediate conversion into dc by static converters using discharge tubes or semiconductor devices to convert the intermediate dc into ac using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/12—Arrangements for reducing harmonics from ac input or output
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/14—Arrangements for reducing ripples from dc input or output
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1584—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load with a plurality of power processing stages connected in parallel
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0003—Details of control, feedback or regulation circuits
- H02M1/0038—Circuits or arrangements for suppressing, e.g. by masking incorrect turn-on or turn-off signals, e.g. due to current spikes in current mode control
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
- H02M3/1584—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load with a plurality of power processing stages connected in parallel
- H02M3/1586—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load with a plurality of power processing stages connected in parallel switched with a phase shift, i.e. interleaved
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Rectifiers (AREA)
Abstract
The invention discloses frequency changer circuits and its deviation suppressing method with the full PAM control mode of interleaving mode, form the frequency changer circuit with the full PAM control mode of interleaving mode by setting rectifier bridge, the first boost chopper, the second boost chopper, capacitor, microcontroller and intelligent power modulation module.The present invention can be after connecting AC power source or before needing to start cooler compressor, microcontroller is according to the voltage swing for obtaining capacitor both ends, the first insulated gate bipolar transistor in the first boost chopper of control is adjusted respectively, the make-and-break time of the second insulated gate bipolar transistor in second boost chopper, ensure to have differences even if the inductance of the first reactor and the second reactor in the second boost chopper in the first boost chopper, also it can be effectively reduced main circuit voltage and generate ripple, therefore, the present invention can guarantee the voltage stabilization for being input to compressor, reduce compressor noise, vibration.And it can be avoided current distortion, reduce the generation of harmonic wave.
Description
Technical field
The present invention relates to convertible frequency air-conditioner circuit design fields, and in particular to the change with the full PAM control mode of interleaving mode
Frequency circuit and its deviation suppressing method.
Background technique
The frequency changer circuit that air-conditioning uses in the prior art uses diode (led) module by ac voltage rectifier for DC voltage,
DC waveform is become more smooth by smoothing capacity, and DC voltage is then again converted to simulation and handed over by intelligent power modulation module
Galvanic electricity pressure driving compressor operating.However, the frequency changer circuit of the prior art is difficult to meet IEC harmonic current standard
(International Electrotechnical Commission, International Electrotechnical Commission).Since harmonic wave can be in input electricity
It generates in stream waveform, can be reduced so as to cause power factor.It is generally avoided in the prior art using the method for active filter
Situation generation is stated, but the method energy loss of active filter is bigger, the phenomenon for causing working efficiency lower occurs.It is existing
Also using increasing boost chopper and synchronizing the intersection zero point of disposable switching and waveform in technology, so that harmonic wave is pressed down
System, so that input current waveform is improved, this circuit is referred to as the circuit PAM；But due to two inductance in the prior art
Inductance have the margin of tolerance, usually ± 10%；Simultaneously as shown in fig. 6, in the prior art Q1, Q2 be although with it is identical when
Between alternate conduction, but there is always deviations for the inductance of two reactors, and main circuit voltage is caused to generate ripple (ripple),
To making the voltage unstability for being input to compressor, cause that compressor noise is big, vibration is big.In addition it is abnormal to will cause primary current
Become, harmonic wave increases, and causes the harmonic current evaluation in EMC evaluation unqualified.
Summary of the invention
The purpose of the present invention is to provide with the full PAM control mode of interleaving mode frequency changer circuit and its deviation inhibition side
Method passes through setting rectifier bridge, the first boost chopper, the second boost chopper, capacitor, microcontroller and intelligent power
Modulation module forms the frequency changer circuit with the full PAM control mode of interleaving mode.The present invention can start to work in AC power source
Afterwards or before needing to start cooler compressor, microcontroller is adjusted respectively according to the voltage swing for obtaining capacitor both ends
The second insulation in the first insulated gate bipolar transistor, the second boost chopper in section the first boost chopper of control
The make-and-break time of grid bipolar junction transistor, so that it is guaranteed that even if the first reactor and second in the first boost chopper boost
Although the inductance of the second reactor in chopper circuit has differences, but the inductance due to reactor can be effectively reduced
Difference and caused by main circuit voltage ripple, therefore, the present invention can guarantee the voltage stabilization for being input to compressor, to reduce
Compressor noise, vibration.In addition current distortion can be avoided, the generation of harmonic wave is reduced.
In order to achieve the above object, the invention is realized by the following technical scheme:
A kind of frequency changer circuit with the full PAM control mode of interleaving mode, its main feature is that, which includes:
AC power source；
Rectifier bridge, the input terminal of the rectifier bridge are connect with the ac power output；
First boost chopper is connect with a pair of output of the rectifier bridge；
Second boost chopper is connect with a pair of output of the rectifier bridge, and electric with first boost chopper
Road is connected in parallel；
Capacitor is connect with first boost chopper, second boost chopper respectively；
Intelligent power modulation module, a pair of of input terminal of the intelligent power modulation module are in parallel with the capacitor both ends
Connection；The output end of the intelligent power modulation module is connect with cooler compressor；
Microcontroller, respectively with first boost chopper, second boost chopper and the capacitor
Connection.
First boost chopper includes:
First reactor, one end of first reactor are connect with the first output end of the rectifier bridge；
First insulated gate bipolar transistor, the collector of first insulated gate bipolar transistor and first electricity
The other end of anti-device connects, and the second output terminal of the emitter of first insulated gate bipolar transistor and the rectifier bridge connects
It connects；
First diode, the anode of the first diode insulate with the other end of first reactor, first respectively
It is connected described in the collector of grid bipolar junction transistor, the cathode of the first diode is connect with the anode of the capacitor.
Second boost chopper includes:
Second reactor, one end of second reactor are connect with the first output end of the rectifier bridge；
Second insulated gate bipolar transistor, the collector of second insulated gate bipolar transistor and second electricity
The other end of anti-device connects, and the second output terminal of the emitter of second insulated gate bipolar transistor and the rectifier bridge connects
It connects；
Second diode, second diode anode respectively with the other end of second reactor, described second
The collector of insulated gate bipolar transistor connects, and the cathode of second diode is connect with the anode of the capacitor.
The cathode of the capacitor is connect with the second output terminal of the rectifier bridge；
First output end of the microcontroller is connect with the gate pole of first insulated gate bipolar transistor, the micro-control
The second output terminal of device processed is connect with the gate pole of second insulated gate bipolar transistor, the input terminal of the microcontroller and institute
State capacitor connection.
A kind of deviation suppressing method of the frequency changer circuit with the full PAM control mode of interleaving mode, its main feature is that, the deviation
Suppressing method includes:
S1 determines the time point for judging capacitor voltage at both ends size；
S2, when first insulated gate bipolar transistor is connected, second insulated gate bipolar transistor leads
When logical, the size of capacitor voltage at both ends value, and according to above-mentioned comparison result adjusts the first insulated gate bipolar transistor, the
The turn-on time of two insulated gate bipolar transistors；
S3, after being adjusted according to the step S2, the DC voltage that intelligent power modulation module will acquire is again converted to mould
Quasi- alternating voltage driving cooler compressor works.
In the step S1:
After connecting AC power source, judgement is compared to the capacitor voltage at both ends size, executes step S2.
In the step S1:
Before needing to start cooler compressor, judgement is compared to the capacitor voltage at both ends size, is executed
Step S2.
The step S2 includes:
S2.1, microcontroller, which will control first insulated gate bipolar transistor and replace with second triode, leads
It is logical, and the two conducting duration having the same；Compare when first insulated gate bipolar transistor conducting and work as institute
When stating the conducting of the second insulated gate bipolar transistor, the size of capacitor voltage at both ends value；
When capacitor voltage at both ends value is equal, step S2.2 is executed；When the first insulated gate bipolar crystal
Pipe capacitor two when the capacitor voltage at both ends value is connected greater than second insulated gate bipolar transistor when being connected
When terminal voltage value, step S2.3 is executed；The capacitor voltage at both ends when first insulated gate bipolar transistor conducting
When value is less than second insulated gate bipolar transistor conducting when capacitor voltage at both ends value, step S2.4 is executed；
S2.2, when capacitor voltage at both ends value is equal, the microcontroller obtains two in different time period
Identical voltage value illustrates that the inductance value of the first reactor is equal with the inductance value of the second reactor, and the microcontroller is kept
Duration T2 tool is connected with second insulated gate bipolar transistor by the first insulated gate bipolar transistor conducting duration T1
There is equal length, executes shown step S3；
S2.3, the microcontroller obtain the voltage of the capacitor when conducting of the first boost chopper higher than second liter
Voltage when chopper circuit conducting is pressed, illustrates that the inductance value of first reactor is greater than the inductance value of second reactor；
First insulated gate bipolar transistor conducting duration T1 is adjusted to less than second insulated gate bipolar by the microcontroller
Duration T2 is connected in transistor npn npn；So that the voltage of capacitor is equal to second boosting when first boost chopper is connected
The voltage of capacitor when chopper circuit is connected executes shown step S3；
S2.4, the microcontroller obtain the voltage of the capacitor when conducting of the first boost chopper lower than second liter
Voltage when chopper circuit conducting is pressed, illustrates that the inductance value of first reactor is less than the inductance value of second reactor；
First insulated gate bipolar transistor conducting duration T1 is adjusted to greater than second insulated gate bipolar by the microcontroller
Duration T2 is connected in transistor npn npn；So that the voltage of capacitor is equal to second boosting when first boost chopper is connected
The voltage of capacitor when chopper circuit is connected executes shown step S3.
Before the step S1, also comprise the following steps:
The alternating voltage that the AC power source provides becomes DC voltage after rectifier bridge is rectified；Described first liter
Pressure chopper circuit is worked alternatively with second boost chopper by the control of the microcontroller；Through the rectification
The DC voltage that bridge obtains passes through the alternate treatment of first boost chopper, second boost chopper respectively
Afterwards, by the capacitor, which is inputted into the intelligent power modulation module.
A kind of frequency changer circuit with the full PAM control mode of interleaving mode, its main feature is that, which includes:
AC power source；
Rectifier bridge, the input terminal of the rectifier bridge are connect with the ac power output；
Multiple boost choppers, each boost chopper connect with a pair of output of the rectifier bridge respectively
It connects, the multiple boost chopper is successively connected in parallel；
Each boost chopper includes: reactor, insulated gate bipolar transistor and diode；The reactor
One end connect with the first output end of the rectifier bridge；The collector of the insulated gate bipolar transistor and the reactor
Other end connection, the emitter of the insulated gate bipolar transistor are connect with the second output terminal of the rectifier bridge；Two pole
The anode of pipe is connect with the collector of the other end of the reactor, the insulated gate bipolar transistor respectively, the diode
Cathode connect with the diode cathode of boost chopper described in other；
The anode of capacitor, the capacitor is connect with the cathode of the diode of the multiple boost chopper respectively；
Intelligent power modulation module, a pair of of input terminal of the intelligent power modulation module are in parallel with the capacitor both ends
Connection；The output end of the intelligent power modulation module is connect with cooler compressor；
Microcontroller, respectively with the gate pole of the insulated gate bipolar transistor of the multiple boost chopper and the electricity
Container connection.
Compared with the prior art, the present invention has the following advantages:
A kind of frequency changer circuit and its deviation suppressing method with interleaving mode disclosed by the invention is rectified by setting
Bridge, the first boost chopper, the second boost chopper, capacitor, microcontroller and intelligent power modulation module form tool
There is the frequency changer circuit of interleaving mode.The present invention can AC power source start-up operation after or needing to start cooler compressor
Before, microcontroller adjusts the in the first boost chopper of control according to the voltage change for obtaining capacitor both ends respectively
The make-and-break time of the second insulated gate bipolar transistor in one insulated gate bipolar transistor, the second boost chopper, from
And ensure the electricity even if the second reactor in the first reactor and the second boost chopper in the first boost chopper
Although sensibility reciprocal has differences, but inductance difference as reactor can be effectively reduced and caused by main circuit voltage line
Wave, therefore, the present invention can guarantee the voltage stabilization for being input to compressor, to reduce compressor noise, vibration.In addition can
Current distortion is avoided, the generation of harmonic wave is reduced.So that the output of frequency changer circuit and efficiency can get a promotion, to supply intelligent function
The voltage of rate modulation module is more stable, more smooth, effectively improves noise, vibration and the harmonic wave of compressor actual use
Current problems.
Detailed description of the invention
Fig. 1 is the overall structure diagram for the frequency changer circuit that the present invention has the full PAM control mode of interleaving mode.
Fig. 2 is the bulk flow of the deviation suppressing method for the frequency changer circuit that the present invention has the full PAM control mode of interleaving mode
Journey schematic diagram.
Fig. 3 is the embodiment of the deviation suppressing method for the frequency changer circuit that the present invention has the full PAM control mode of interleaving mode
One of schematic diagram.
Fig. 4 is the embodiment of the deviation suppressing method for the frequency changer circuit that the present invention has the full PAM control mode of interleaving mode
The two of schematic diagram.
Fig. 5 is the embodiment of the deviation suppressing method for the frequency changer circuit that the present invention has the full PAM control mode of interleaving mode
The three of schematic diagram.
Fig. 6 is the existing of frequency changer circuit and its deviation suppressing method of the present invention with the full PAM control mode of interleaving mode
Technology schematic diagram.
Specific embodiment
The present invention is further elaborated by the way that a preferable specific embodiment is described in detail below in conjunction with attached drawing.
As shown in Figure 1, a kind of frequency changer circuit with the full PAM control mode of interleaving mode, which includes: exchange
Power supply U, rectifier bridge DB, the first boost chopper, the second boost chopper, capacitor C, intelligent power modulation module IPM
And microcontroller MICOM.
Wherein, the input terminal of rectifier bridge DB is connect with AC power source U output end；First boost chopper and rectifier bridge DB
A pair of output connection；Second boost chopper is connect with a pair of output of rectifier bridge DB, and with the first boost chopper
Circuit in parallel connection；Capacitor C is connect with the first boost chopper, the second boost chopper respectively；Intelligent power modulation
A pair of of input terminal of module I PM is connected in parallel with the both ends capacitor C；The output end and air conditioner of intelligent power modulation module IPM
Compressor MC connection；Microcontroller MICOM connects with the first boost chopper, the second boost chopper and capacitor C respectively
It connects.
As shown in Figure 1, the first boost chopper includes: the first reactor L1, the first insulated gate bipolar transistor Q1
And first diode D1.
Wherein, one end of the first reactor L1 is connect with the first output end of rectifier bridge DB；First insulated gate bipolar is brilliant
The collector of body pipe Q1 is connect with the other end of the first reactor L1, the emitter of first insulated gate bipolar transistor Q1 with
The second output terminal of rectifier bridge DB connects；First diode D1 anode respectively with the other end of the first reactor L1, first absolutely
The collector of edge grid bipolar junction transistor Q1 connects, and the cathode of first diode D1 is connect with the anode of capacitor C.
As shown in Figure 1, the second boost chopper includes: the second reactor L2, the second insulated gate bipolar transistor Q2
And the second diode D2.
Wherein, one end of the second reactor L2 is connect with the first output end of rectifier bridge DB；Second insulated gate bipolar is brilliant
The collector of body pipe Q2 is connect with the other end of the second reactor L2, the emitter of second insulated gate bipolar transistor Q2 with
The second output terminal of rectifier bridge DB connects；Second diode D2 anode respectively with the other end of the second reactor L2, second absolutely
The collector of edge grid bipolar junction transistor Q2 connects, and the cathode of second diode D2 is connect with the anode of capacitor C.
The cathode of capacitor C is connect with the second output terminal of rectifier bridge DB；The first output end of microcontroller MICOM and
The gate pole of one insulated gate bipolar transistor Q1 connects, the second output terminal and the second insulated gate bipolar of microcontroller MICOM
The gate pole of transistor npn npn Q2 connects, and the input terminal of microcontroller MICOM is connect with capacitor C.
In the present invention, rectifier bridge DB is made of four diode bridge heaps, and the AC signal for exporting AC power source U turns
Turn to direct current signal.First reactor L1, the second reactor L2 play the role of improving power factor in entire frequency changer circuit.
First insulated gate bipolar transistor Q1, the second insulated gate bipolar transistor Q2 play contactless open in entire frequency changer circuit
The purposes of pass.First diode D1, the second diode D2 play the role of rectification in entire frequency changer circuit.Capacitor C is flat
Sliding capacitor, so that the DC voltage of output is more smooth.Intelligent power modulation module IPM is for driving cooler compressor MC work
Make, which obtains the DC voltage and control signal of capacitor C output, exports variable ratio frequency changer pressure-variable
Power supply signal to cooler compressor MC.As shown in Fig. 2, a kind of frequency changer circuit with the full PAM control mode of interleaving mode
Deviation suppressing method, which includes:
S1 determines the time point for judging capacitor C both end voltage size.It can according to the actual situation, two in the present invention
Kind carries out the turn-on time of the first insulated gate bipolar transistor Q1, the second insulated gate bipolar transistor Q2 under different conditions
Compare.
Embodiment one after connecting AC power source U, is compared judgement to capacitor C both end voltage size, executes step
S2。
Embodiment two is compared capacitor C both end voltage size and sentences before needing to start cooler compressor MC
It is disconnected, execute step S2.
Before step S1, also comprise the following steps: the alternating voltage that AC power source U is provided carries out whole by rectifier bridge DB
Become DC voltage after stream；First boost chopper and the second boost chopper by the control of microcontroller MICOM into
Row works alternatively；The DC voltage that rectified bridge DB is obtained passes through the first boost chopper, the second boost chopper respectively
Alternate treatment after, by capacitor C, so that the DC voltage at the both ends capacitor C is more smooth, and the DC voltage is defeated
Enter intelligent power modulation module IPM.
S2, when comparing the first insulated gate bipolar transistor Q1 conducting, when the second insulated gate bipolar transistor Q2 is connected,
The size of capacitor C both end voltage value, and according to above-mentioned comparison result, adjust the first insulated gate bipolar transistor Q1, second
The turn-on time of insulated gate bipolar transistor Q2.Step S2 includes:
S2.1, microcontroller MICOM control the first insulated gate bipolar transistor Q1 and the second triode Q2 alternate conduction,
And the two conducting duration having the same；Compare when the first insulated gate bipolar transistor Q1 conducting and when the second three-level
When pipe Q2 is connected, the size of capacitor C both end voltage value.
As shown in figure 5, microcontroller MICOM presets the first insulated gate bipolar transistor Q1's in the present embodiment
A length of 1s when conducting, when conducting of the second insulated gate bipolar transistor Q2 a length of 1s, be spaced 5s therebetween and alternately leads
It is logical.
When capacitor C both end voltage value is equal, step S2.2 is executed；When the first insulated gate bipolar transistor Q1 is connected
When capacitor C both end voltage value be greater than the second insulated gate bipolar transistor Q2 be connected when capacitor C both end voltage value when, execute
Step S2.3；When the first insulated gate bipolar transistor Q1 conducting, capacitor C both end voltage value is less than the second insulated gate bipolar
When transistor npn npn Q2 is connected when capacitor C both end voltage value, step S2.4 is executed.
S2.2, when capacitor C both end voltage value is equal, microcontroller MICOM obtains two phases in different time period
Same voltage value, illustrates that the inductance value of the first reactor L1 is equal with the inductance value of the second reactor L2, and microcontroller MICOM is protected
The first insulated gate bipolar transistor Q1 conducting duration T1 is held duration T2 is connected with the second insulated gate bipolar transistor Q2 to have
Equal length executes shown step S3.
As Figure 1 and Figure 4, in the present embodiment, as the μ H of L1=L2=100, the first both ends insulated gate bipolar transistor Q1
Voltage change VL1, the second both ends insulated gate bipolar transistor Q2 the both ends voltage change VL2 and capacitor C voltage
It is as shown in Figure 4 to change VDC.That is, in the case where step S2.2, due to the first reactor L1 and the second reactor L2 size phase
Deng, therefore frequency changer circuit voltage will not be made to generate ripple, namely the voltage of input cooler compressor MC keeps shakedown.
The voltage of capacitor C is higher than the second boosting when S2.3, microcontroller MICOM obtain the conducting of the first boost chopper
Voltage when chopper circuit is connected illustrates that the inductance value of the first reactor L1 is greater than the inductance value of the second reactor L2；The micro-control
First insulated gate bipolar transistor Q1 conducting duration T1 is adjusted to less than the second insulated gate bipolar transistor by device MICOM processed
Duration T2 is connected in Q2；So that the voltage of capacitor C is connected equal to the second boost chopper when the first boost chopper is connected
When capacitor C voltage, execute shown in step S3.
In the present invention, since there are parameter errors between the first reactor L1 and the second reactor L2, so that frequency changer circuit
Generate ripple, so as to cause the voltage unstability for being input to cooler compressor MC, cause the noise of cooler compressor MC it is big,
Vibration is big.In addition, will cause primary current distortion, so that harmonic wave increases, the harmonic current evaluation in EMC evaluation is caused not conform to
Lattice.
Therefore, according to the actual situation, microcontroller MICOM adjusts the first insulated gate bipolar transistor Q1 and duration T1 is connected
Duration T2 is connected less than the second insulated gate bipolar transistor Q2, the first reactor L1 is generated with the second reactor L2
The effect (as shown in Figure 4) of equivalent effect.So that the voltage VDC at the both ends capacitor C formed is smoothened, air conditioner is inputted
The voltage of compressor MC becomes stable, to effectively improve the noise of cooler compressor MC, vibration and harmonic current
Problem.
The voltage of capacitor C is lower than the second boosting when S2.4, microcontroller MICOM obtain the conducting of the first boost chopper
Voltage when chopper circuit is connected, illustrates inductance value of the inductance value less than the second reactor L2 of the first reactor L1；The micro-control
First insulated gate bipolar transistor Q1 conducting duration T1 is adjusted to greater than the second insulated gate bipolar transistor by device MICOM processed
Duration T2 is connected in Q2；So that the voltage of capacitor C is connected equal to the second boost chopper when the first boost chopper is connected
When capacitor C voltage, execute shown in step S3.
In the present embodiment, since the voltage of capacitor C when microcontroller MICOM obtains the conducting of the first boost chopper is low
The voltage when conducting of the second boost chopper, namely illustrate L1 < L2.As shown in figure 3, formed in these cases
The voltage change VL1 at the first both ends insulated gate bipolar transistor Q1, the second both ends insulated gate bipolar transistor Q2 voltage
Change the voltage change VDC at VL2 and the both ends capacitor C.Due to there is ginseng between the first reactor L1 and the second reactor L2
Number deviation, so that frequency changer circuit, which generates ripple, causes air-conditioning so as to cause the voltage unstability for being input to cooler compressor MC
The noise of device compressor MC is big, vibration is big.In addition it will cause primary current distortion, so that harmonic wave increases, cause in EMC evaluation
Harmonic current evaluation is unqualified.
Therefore, according to the actual situation, microcontroller MICOM adjusts the first insulated gate bipolar transistor Q1 and duration T1 is connected
Duration T2 is connected greater than the second insulated gate bipolar transistor Q2, the first reactor L1 is generated with the second reactor L2
The effect (as shown in Figure 4) of equivalent effect.So that the voltage VDC at the both ends capacitor C formed is smoothened, air conditioner is inputted
The voltage of compressor MC becomes stable, to effectively improve the noise of cooler compressor MC, vibration and harmonic current
Problem.
S3, after being adjusted according to step S2, the DC voltage that intelligent power modulation module IPM will acquire is again converted to simulate
Alternating voltage driving cooler compressor MC works.
A kind of frequency changer circuit with the full PAM control mode of interleaving mode disclosed in the present invention can also include multiple liters
Press chopper circuit.Wherein, each boost chopper is connect with a pair of output of rectifier bridge respectively, multiple boost choppers
Successively it is connected in parallel.
Each boost chopper includes: reactor, insulated gate bipolar transistor and diode.One end of reactor with
First output end of rectifier bridge connects.The collector of insulated gate bipolar transistor is connect with the reactor other end, the insulated gate
The emitter of bipolar junction transistor and the second output terminal of rectifier bridge connect.The anode of diode is another with reactor respectively
The collector connection at end, insulated gate bipolar transistor, the cathode of the diode and the diode of other boost choppers are negative
Pole connection.
That is, the present invention may include three or more boost choppers.It include three or more boost choppers electricity
The work of Lu Shi, the work operation logic of each pressure chopper circuit and above-mentioned first pressure chopper circuit, the second pressure chopper circuit are transported
Row principle is identical.
It is discussed in detail although the contents of the present invention have passed through above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read above content, for of the invention
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (6)
1. a kind of frequency changer circuit with the full PAM control mode of interleaving mode, which is characterized in that the frequency changer circuit includes:
AC power source；
Rectifier bridge, the input terminal of the rectifier bridge are connect with the ac power output；
First boost chopper is connect with a pair of output of the rectifier bridge；
Second boost chopper is connect with a pair of output of the rectifier bridge, and simultaneously with first boost chopper
Connection connection；
Capacitor is connect with first boost chopper, second boost chopper respectively；
Intelligent power modulation module, a pair of of input terminal of the intelligent power modulation module is in parallel with the capacitor both ends to be connected
It connects；The output end of the intelligent power modulation module is connect with cooler compressor；
Microcontroller is connect with first boost chopper, second boost chopper and the capacitor respectively；
First boost chopper includes:
First reactor, one end of first reactor are connect with the first output end of the rectifier bridge；
First insulated gate bipolar transistor, the collector of first insulated gate bipolar transistor and first reactor
Other end connection, the emitter of first insulated gate bipolar transistor connect with the second output terminal of the rectifier bridge；
First diode, the anode of the first diode are double with the other end of first reactor, the first insulated gate respectively
The collector of bipolar transistor connects, and the cathode of the first diode is connect with the anode of the capacitor；
Second boost chopper includes:
Second reactor, one end of second reactor are connect with the first output end of the rectifier bridge；
Second insulated gate bipolar transistor, the collector of second insulated gate bipolar transistor and second reactor
Other end connection, the emitter of second insulated gate bipolar transistor connect with the second output terminal of the rectifier bridge；
Second diode, the anode of second diode insulate with the other end of second reactor, described second respectively
The collector of grid bipolar junction transistor connects, and the cathode of second diode is connect with the anode of the capacitor；
The cathode of the capacitor is connect with the second output terminal of the rectifier bridge；
First output end of the microcontroller is connect with the gate pole of first insulated gate bipolar transistor, the microcontroller
Second output terminal connect with the gate pole of second insulated gate bipolar transistor, the input terminal of the microcontroller and the electricity
Container connection；
When microcontroller controls the first insulated gate bipolar transistor and the second insulated gate bipolar transistor with identical conducting
Long alternate conduction；And microcontroller is when being connected the first insulated gate bipolar transistor and the second insulated gate bipolar crystal
When pipe is connected, the size of capacitor voltage at both ends value is compared:
Capacitor both ends electricity when being connected when the conducting of the first insulated gate bipolar transistor with the second insulated gate bipolar transistor
Pressure value is equal, and microcontroller leads the first insulated gate bipolar transistor conducting duration T1 with the second insulated gate bipolar transistor
Logical duration T2 keeps equal length；
When the conducting of the first boost chopper, the voltage of capacitor is higher than the electricity of capacitor when the second boost chopper is connected
First insulated gate bipolar transistor conducting duration T1 is adjusted to less than the second insulated gate bipolar transistor by pressure, microcontroller
Duration T2 is connected；
The electricity of capacitor when the voltage of capacitor is connected lower than the second boost chopper when the conducting of the first boost chopper
First insulated gate bipolar transistor conducting duration T1 is adjusted to greater than the second insulated gate bipolar transistor by pressure, microcontroller
Duration T2 is connected.
2. a kind of deviation suppressing method of the frequency changer circuit with the full PAM control mode of interleaving mode is suitable for claim 1 institute
State the frequency changer circuit with the full PAM control mode of interleaving mode, which is characterized in that the deviation suppressing method comprises the steps of:
S1 determines the time point for judging capacitor voltage at both ends size；
S2, when comparing the conducting of the first insulated gate bipolar transistor, when the second insulated gate bipolar transistor is connected, capacitor two
The size of terminal voltage value, and according to above-mentioned comparison result, adjust first insulated gate bipolar transistor, second insulation
The turn-on time of grid bipolar junction transistor；
S3, after being adjusted according to the step S2, the DC voltage that intelligent power modulation module will acquire is again converted to simulation and hands over
Galvanic electricity pressure driving cooler compressor works；
In step s 2, microcontroller controls the first insulated gate bipolar transistor with the second insulated gate bipolar transistor with phase
Same conducting duration alternate conduction, and compare when the conducting of the first insulated gate bipolar transistor and when the second insulated gate bipolar
When transistor npn npn is connected, the size of capacitor voltage at both ends value:
Capacitor both ends electricity when being connected when the conducting of the first insulated gate bipolar transistor with the second insulated gate bipolar transistor
When pressure value is equal, microcontroller makes the first insulated gate bipolar transistor conducting duration T1 and the second insulated gate bipolar transistor
Duration T2 is connected and keeps equal length；
When the conducting of the first boost chopper, the voltage of capacitor is higher than the electricity of capacitor when the second boost chopper is connected
First insulated gate bipolar transistor conducting duration T1 is adjusted to less than the second insulated gate bipolar transistor by pressure, microcontroller
Duration T2 is connected；
The electricity of capacitor when the voltage of capacitor is connected lower than the second boost chopper when the conducting of the first boost chopper
First insulated gate bipolar transistor conducting duration T1 is adjusted to greater than the second insulated gate bipolar transistor by pressure, microcontroller
Duration T2 is connected.
3. the deviation suppressing method of the frequency changer circuit with interleaving mode as claimed in claim 2, which is characterized in that the step
In rapid S1:
After connecting AC power source, judgement is compared to the capacitor voltage at both ends size, executes step S2.
4. the deviation suppressing method of the frequency changer circuit with interleaving mode of full PAM control mode as claimed in claim 2, special
Sign is, in the step S1:
Before needing to start cooler compressor, judgement is compared to the capacitor voltage at both ends size, executes step
S2。
5. the deviation suppressing method of the frequency changer circuit with the full PAM control mode of interleaving mode as described in claim 3 or 4,
It is characterized in that, the step S2 further includes following steps:
S2.1, microcontroller will control first insulated gate bipolar transistor and second insulated gate bipolar transistor
Alternate conduction, and the two conducting duration having the same；Compare when first insulated gate bipolar transistor conducting when with
And when second insulated gate bipolar transistor conducting, the size of capacitor voltage at both ends value；When the capacitor both ends
When voltage value is equal, step S2.2 is executed；The capacitor both ends electricity when first insulated gate bipolar transistor conducting
When pressure value is greater than capacitor voltage at both ends value when second insulated gate bipolar transistor is connected, step S2.3 is executed；
When first insulated gate bipolar transistor conducting, the capacitor voltage at both ends value is less than second insulated gate bipolar
When transistor npn npn is connected when the capacitor voltage at both ends value, step S2.4 is executed；
S2.2, when the capacitor voltage at both ends value it is equal when, the microcontroller obtain in different time period two it is identical
Voltage value, illustrate that the inductance value of the first reactor is equal with the inductance value of the second reactor, the microcontroller makes described
It is identical as second insulated gate bipolar transistor conducting duration T2 holding that duration T1 is connected in one insulated gate bipolar transistor
Length executes shown step S3；
The voltage of S2.3, microcontroller capacitor when obtaining the conducting of the first boost chopper are cut higher than the second boosting
Voltage when wave circuit is connected illustrates that the inductance value of first reactor is greater than the inductance value of second reactor；This is micro-
First insulated gate bipolar transistor conducting duration T1 is adjusted to brilliant less than second insulated gate bipolar by controller
Duration T2 is connected in body pipe；So that the voltage of capacitor is equal to second boost chopper when first boost chopper is connected
The voltage of capacitor when circuit is connected executes shown step S3；
The voltage of S2.4, microcontroller capacitor when obtaining the conducting of the first boost chopper are cut lower than the second boosting
Voltage when wave circuit is connected illustrates that the inductance value of first reactor is less than the inductance value of second reactor；This is micro-
First insulated gate bipolar transistor conducting duration T1 is adjusted to brilliant greater than second insulated gate bipolar by controller
Duration T2 is connected in body pipe；So that the voltage of capacitor is equal to second boost chopper when first boost chopper is connected
The voltage of capacitor when circuit is connected executes shown step S3.
6. the deviation suppressing method of the frequency changer circuit with the full PAM control mode of interleaving mode as claimed in claim 2, special
Sign is, before the step S1, also comprises the following steps:
The alternating voltage that the AC power source provides becomes DC voltage after rectifier bridge is rectified；First boosting is cut
Wave circuit is worked alternatively with second boost chopper by the control of the microcontroller；It is obtained through the rectifier bridge
The DC voltage taken respectively by first boost chopper, second boost chopper alternate treatment after, warp
The capacitor is crossed, which is inputted into the intelligent power modulation module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611165667.2A CN106533196B (en) | 2016-12-16 | 2016-12-16 | Frequency changer circuit and its deviation suppressing method with the full PAM control mode of interleaving mode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611165667.2A CN106533196B (en) | 2016-12-16 | 2016-12-16 | Frequency changer circuit and its deviation suppressing method with the full PAM control mode of interleaving mode |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106533196A CN106533196A (en) | 2017-03-22 |
| CN106533196B true CN106533196B (en) | 2019-04-30 |
Family
ID=58340103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611165667.2A Active CN106533196B (en) | 2016-12-16 | 2016-12-16 | Frequency changer circuit and its deviation suppressing method with the full PAM control mode of interleaving mode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106533196B (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102624203A (en) * | 2011-01-26 | 2012-08-01 | 珠海格力电器股份有限公司 | Variable frequency speed regulator and variable frequency air conditioner |
| CN103532367A (en) * | 2012-07-03 | 2014-01-22 | 珠海格力电器股份有限公司 | interleaved PFC control method and device |
| CN104052274A (en) * | 2013-03-13 | 2014-09-17 | Lg电子株式会社 | Power converter and air conditioner having the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI497886B (en) * | 2013-05-10 | 2015-08-21 | Univ Nat Taiwan | Control device for multiphase interleaving dc-dc converter and control method thereof |
-
2016
- 2016-12-16 CN CN201611165667.2A patent/CN106533196B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102624203A (en) * | 2011-01-26 | 2012-08-01 | 珠海格力电器股份有限公司 | Variable frequency speed regulator and variable frequency air conditioner |
| CN103532367A (en) * | 2012-07-03 | 2014-01-22 | 珠海格力电器股份有限公司 | interleaved PFC control method and device |
| CN104052274A (en) * | 2013-03-13 | 2014-09-17 | Lg电子株式会社 | Power converter and air conditioner having the same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106533196A (en) | 2017-03-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201072438Y (en) | Multi-input channel modularized high-frequency isolation single phase electric energy feedback type electronic load | |
| EP2568592A1 (en) | Inverter topology circuit, inversion method and inveter | |
| WO2020237864A1 (en) | Operation control method, circuit, household appliance, and computer-readable storage medium | |
| CN107168448A (en) | Solar air conditioner control device, solar air conditioner and control method | |
| CN110289771A (en) | Household appliance and its voltage regulator circuit | |
| CN104113262A (en) | Variable frequency air-conditioner and motor control system based on Z-source converter | |
| CN103916040A (en) | Inverter topological circuit, inverting method and inverter | |
| CN102780409B (en) | Unity-power-factor buck-boost circuit | |
| CN208675121U (en) | Alternating current-direct current input adaptive switching power circuit | |
| CN102157957A (en) | Energy-saving feedback load system based on UPS (uninterrupted power supply) topology and control method thereof | |
| CN101860070B (en) | Uninterruptible power supply for high-frequency soft switch of locomotive air conditioner and realization method thereof | |
| CN112152489B (en) | High-low voltage direct current dual-output integrated three-phase PWM rectifier converter and control method | |
| CN203377786U (en) | A pfc converter | |
| CN108923637A (en) | A kind of non-isolated Three-phase PFC of buck and its control method | |
| CN112019029B (en) | Operation control method, circuit, household appliance and computer readable storage medium | |
| CN106533196B (en) | Frequency changer circuit and its deviation suppressing method with the full PAM control mode of interleaving mode | |
| CN203554355U (en) | A variable frequency air-conditioner and a motor control system based on a Z source converter | |
| CN205319967U (en) | Inverter device | |
| CN206250997U (en) | A kind of LCC resonant modes microwave applications device powersupply system | |
| CN106059312B (en) | A kind of control method of the source Z DC converter | |
| Fan et al. | Research on SiC-based Totem-pole Bridgeless PFC Converter and Control Strategy | |
| CN205212694U (en) | Two boost of common mode rejection do not have bridge PFC converter | |
| CN109428338A (en) | Energy storage system | |
| CN211627761U (en) | High-speed permanent magnet synchronous motor loading device | |
| Hu et al. | Novel zero-voltage transition semi bridgeless boost PFC converter with soft switching auxiliary switch |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |