CN106533164B - DC to DC converter and fault protecting method - Google Patents
DC to DC converter and fault protecting method Download PDFInfo
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- CN106533164B CN106533164B CN201611116235.2A CN201611116235A CN106533164B CN 106533164 B CN106533164 B CN 106533164B CN 201611116235 A CN201611116235 A CN 201611116235A CN 106533164 B CN106533164 B CN 106533164B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
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- Dc-Dc Converters (AREA)
Abstract
This application involves electronic technology fields.Specifically, this application provides DC to DC converter and fault protecting methods.The fault protecting method is executed by DC to DC converter.The described method includes: controller detects whether upper MOSFET breaks down by control port；When the controller detects that the upper MOSFET breaks down by the control port, the controller closes protecting MOSFET by output end.A possibility that load that the output end that above-mentioned technical proposal facilitates reduction DC to DC converter is connected is damaged.
Description
Technical field
The present invention relates to electronic technology field more particularly to DC to DC converter (DC-to-DC converter) with
And fault protecting method.
Background technique
DC-to-DC converter is a kind of widely used converter.For example, some DC-to-DC converter
12 volts of input voltage level (input voltage level) can be converted to 3.3 volts of output-voltage levels
(output voltage level).3.3 volts of output voltage level is used to printed circuit board
Chip power supply on (Printed Circuit Board, PCB).
Specifically, DC-to-DC converter includes control chip, double metal oxide semiconductor field effect transistor
Manage (dual metallic oxide semiconductor field effect transistor, dual MOSFET) and
Inductance (inductor).Dual MOSFET includes upper metal oxide semiconductor field effect transistor (upper MOSFET)
With lower metal oxide semiconductor field effect transistor (lower MOSFET).It is the drain electrode of the lower MOSFET, described
The source electrode of upper MOSFET is coupled with one end of the inductance.The control chip can control the lower MOSFET with
And the upper MOSFET, thus the output for driving the inductance to provide 3.3 volts by the other end of the inductance
voltage level。
When upper MOSFET is turned on (turn on), the power of upper MOSFET consumption is bigger.Therefore, upper
MOSFET is easy to happen failure.When upper MOSFET breaks down, DC-to-DC converter is practical to be provided
Output voltage level is likely to be greater than specified voltage level.Above situation may cause DC-to-DC
The load that the output end of converter is connected is damaged.For example, the specified voltage of DC-to-DC converter
Level is 3.3 volts.When upper MOSFET breaks down, the practical output provided of DC-to-DC converter
Voltage level may be 8 volts.It may cause the chip that the output end of DC-to-DC converter is connected to damage
It is bad.
Summary of the invention
To reduce a possibility that load that the output end of DC-to-DC converter is connected is damaged, the application is mentioned
DC-to-DC converter and fault protecting method are supplied.
In a first aspect, providing a kind of DC to DC converter.The DC to DC converter include controller,
Upper MOSFET, lower MOSFET, protecting MOSFET and inductance；
First output end of the controller is coupled with the grid of the upper MOSFET；
The second output terminal of the controller is coupled with the grid of the lower MOSFET；
The third output end of the controller is coupled with the grid of the protecting MOSFET；
The source electrode of the lower MOSFET is coupled with earthing potential ground potential；
The drain electrode of the lower MOSFET, the source electrode of the upper MOSFET, one end of the inductance and the control
The control port of device processed couples；
The drain electrode of the upper MOSFET is coupled with the source electrode of the protecting MOSFET；
The drain electrode of the protecting MOSFET and first voltage level voltage level coupling；
For the other end of the inductance for providing the 2nd voltage level, the value of the 2nd voltage level is small
In the value of the first voltage level；
The controller, which is used to pass through, controls the upper MOSFET using first output end, and passes through utilization
The second output terminal controls the lower MOSFET, and the inductance is driven to provide the 2nd voltage level；
The controller is used to detect whether the upper MOSFET breaks down by the control port；
When the controller detects that the upper MOSFET breaks down by the control port, the control
Device is used to close the protecting MOSFET by the third output end.
Second aspect provides a kind of method of MOSFET error protection, which is characterized in that the method is by DC to DC
Converter execute, the DC to DC converter include controller, upper MOSFET, lower MOSFET,
Protecting MOSFET and inductance；
First output end of the controller is coupled with the grid of the upper MOSFET；
The second output terminal of the controller is coupled with the grid of the lower MOSFET；
The third output end of the controller is coupled with the grid of the protecting MOSFET；
The source electrode of the lower MOSFET is coupled with earthing potential ground potential；
The drain electrode of the lower MOSFET, the source electrode of the upper MOSFET, one end of the inductance and the control
The control port of device processed couples；
The drain electrode of the upper MOSFET is coupled with the source electrode of the protecting MOSFET；
The drain electrode of the protecting MOSFET and first voltage level voltage level coupling；
For the other end of the inductance for providing the 2nd voltage level, the value of the 2nd voltage level is small
In the value of the first voltage level；
The controller, which is used to pass through, controls the upper MOSFET using first output end, and passes through utilization
The second output terminal controls the lower MOSFET, and the inductance is driven to provide the 2nd voltage level；
The described method includes:
The controller detects whether the upper MOSFET breaks down by the control port；
When the controller detects that the upper MOSFET breaks down by the control port, the control
Device closes the protecting MOSFET by the third output end.
Optionally, the technical solution provided according to first aspect or second aspect, the controller pass through the control
Whether upper MOSFET described in Port detecting, which breaks down, includes:
The controller determines the duty ratio of dual MOSFET, and the dual MOSFET includes the upper MOSFET
With the lower MOSFET；
When the duty ratio of the dual MOSFET is greater than threshold value, the controller determines the upper MOSFET hair
Raw failure, the threshold value are equal to or more than the quotient of the 2nd voltage level and the first voltage level.
Optionally, in above-mentioned technical proposal, the controller determines that the duty ratio of dual MOSFET includes:
The controller determines at least one duty cycle of the dual MOSFET；
The controller determines the dual MOSFET in the duty ratio of at least one duty cycle.
Optionally, in above-mentioned technical proposal, at least one described duty cycle is continuous multiple duty cycles, described
Duty ratio of the dual MOSFET at least one duty cycle includes the dual MOSFET described continuous multiple
The duty ratio of each duty cycle in duty cycle；
When the duty ratio of the dual MOSFET is greater than threshold value, the controller determines the upper MOSFET hair
Giving birth to failure includes:
When the duty ratio of each duty cycle in continuous multiple duty cycles is greater than the threshold value, the control
Device processed determines that the upper MOSFET breaks down.
Optionally, in above-mentioned technical proposal, at least one described duty cycle is a duty cycle；
When the duty ratio of the dual MOSFET is greater than threshold value, the controller determines the upper MOSFET hair
Giving birth to failure includes:
When the duty ratio of one duty cycle is equal to 1, the controller determines that the upper MOSFET occurs
Failure.
In above-mentioned technical proposal, after the protecting MOSFET is closed, the output of DC-to-DC converter
Power will be gradually reduced to 0.Therefore, above scheme can protect the load of the DC-to-DC converter connection
Shield.Help to reduce a possibility that load that is connected of output end of DC-to-DC converter is damaged.
In addition, the drain electrode of the source electrode of the protecting MOSFET and the upper MOSFET couple.When described
When protecting MOSFET is closed, the value of the voltage level of the drain electrode of the upper MOSFET can be 0.Institute
State the voltage level of the source electrode of upper MOSFET value be can be with 0.The source electrode of the upper MOSFET and described
Potential difference between the drain electrode of upper MOSFET can be 0.Therefore, even if the controller is opened by first output end
The upper MOSFET is opened, the power of the upper MOSFET consumption can be equal to 0.The upper MOSFET is not easy
It is burned out.To which the protecting MOSFET protects upper MOSFET.
Detailed description of the invention
In order to more clearly explain the technical solutions in the embodiments of the present application, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, the accompanying drawings in the following description is some embodiments of the present application, for this
For the those of ordinary skill of field, without any creative labor, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 provides the structural schematic diagram of DC-to-DC converter a kind of for embodiment.
Fig. 2 is a kind of structural schematic diagram of possible implementation of DC-to-DC converter shown in FIG. 1.
Fig. 3 provides the structural schematic diagram of another DC-to-DC converter for embodiment.
Fig. 4 is a kind of schematic diagram of possible specific implementation of DC-to-DC converter300 shown in Fig. 3.
Fig. 5 is a kind of a kind of structural schematic diagram of the possible implementation for circuit that embodiment provides.
Fig. 6 provides a kind of a kind of structural schematic diagram of possible implementation of converter for embodiment.
Fig. 7 is a kind of schematic diagram of the method for MOSFET error protection that embodiment provides.
Specific embodiment
In the application, inductance is a component in DC-to-DC converter.One end of the inductance and the DC-
Lower in the input terminal of upper MOSFET in to-DC converter and the DC-to-DC converter
The output end of MOSFET couples.The other end of the inductance is coupled with the load of the DC-to-DC converter.
Fig. 1 provides the structural schematic diagram of DC-to-DC converter a kind of for the embodiment of the present application.Referring to Fig. 1, DC-
To-DC converter100 includes controller, upper MOSFET, lower MOSFET and inductance.For example, described
Controller can be specific integrated circuit (application-specific integrated circuit, ASIC), and scene can
It programs gate array (field programmable gate array, FPGA), Complex Programmable Logic Devices (complex
Programmable logical device, CPLD) or central processing unit (central process unit, CPU).
DC-to-DC converter100 can be there are many specific implementation.Fig. 2 is DC-to-DC shown in FIG. 1
A kind of structural schematic diagram of possible implementation of converter100.Below in conjunction with Fig. 2, to DC-to-DC
Converter100 is illustrated.
Referring to fig. 2, the controller can be IC1.The upper MOSFET can be MOS1.The lower
MOSFET can be MOS2.The inductance can be I1.
First output end of the controller is coupled with the grid of the upper MOSFET.Referring to fig. 2, described first is defeated
Outlet can be P1.
The second output terminal of the controller is coupled with the grid of the lower MOSFET.Referring to fig. 2, described second is defeated
Outlet can be P2.
The source electrode of the lower MOSFET is coupled with earthing potential (ground potential).Referring to fig. 2, described
Ground potential can be G1.The voltage level (voltage level) of G1 can be equal to 0 volt.For example, G1
Voltage level can also be equal to 0.1 volt, 0.2 volt or 0.3 volt.
The drain electrode of the lower MOSFET, the source electrode of the upper MOSFET, one end of the inductance and the control
The control port of device processed couples.Referring to fig. 2, the control port can be P0.The drain electrode of MOS2, the source electrode of MOS1, IC1 it is defeated
Enter the X point coupling shown in Fig. 2 of one end of end and I1.X point is coupled with control port P0 by conducting wire.
The drain electrode of the upper MOSFET is coupled with the first voltage level.Referring to fig. 2, the first voltage
Level can be 12 volts.
The other end of the inductance is for providing the 2nd voltage level.The value of the 2nd voltage level is small
In the value of the first voltage level.Referring to fig. 2, the value of the 2nd voltage level can be equal to 3.3 volts.
The other end of I1 is used to provide 3.3 volts of output voltage level.
The controller, which is used to pass through, controls the upper MOSFET using first output end, and passes through utilization
The second output terminal controls the lower MOSFET, and the inductance is driven to provide the 2nd voltage level.
Specifically, the controller can be controlled by first output end upper MOSFET unlatching and
It closes.For example, the controller can control the upper by first output end and the control port
The opening and closing of MOSFET.The control port is coupled with the source electrode of the upper MOSFET.First output end with
The grid of the upper MOSFET couples.The controller can be by first output end to the upper MOSFET
Grid export voltage level1.The controller can be by the control port to the source of the upper MOSFET
Pole exports voltage level2.When the difference of voltage level1 and voltage level2 is greater than the upper
When threshold voltage (the threshold voltage) of MOSFET, the upper MOSFET is turned on.As voltage level1
When being less than or equal to threshold voltage with the difference of voltage level2, the upper MOSFET is closed.
The controller can control the opening and closing of the lower MOSFET by the second output terminal.About
The controller controls the specific implementation of the opening and closing of the lower MOSFET, can be with reference to above to the control
Device processed controls the description of the specific implementation of the opening and closing of the upper MOSFET, and details are not described herein again.
When the lower MOSFET is closed, the controller is via first output end to the upper
The grid of MOSFET provides control signal, to open the upper MOSFET.For example, the controller is not via described
When two output ends provide control signal to the grid of the lower MOSFET, the lower MOSFET is closed.
When the upper MOSFET is closed, the controller is via the second output terminal to the lower
The grid of MOSFET provides control signal, to open (turn on) described lower MOSFET.Such as the controller without
When providing control signal to the grid of the upper MOSFET from first output end, the upper MOSFET is closed
It closes.
When the upper MOSFET is turned on, the voltage level of the source electrode of the upper MOSFET is equal to
The first voltage level.Therefore, the voltage level of the source electrode of the upper MOSFET can drive described
Inductance provides the 2nd voltage level.
Referring to fig. 2, IC1 can control the opening and closing of MOS1 by P1.Specifically, IC1 can pass through P1 and P0
Control the opening and closing of MOS1.IC1 can control the opening and closing of MOS2 by P2.When MOS1 is turned on, MOS2 quilt
It closes.When MOS2 is turned on, MOS1 is closed.
When MOS1 is turned on, the voltage level of the source electrode of MOS1 is equal to 12 volts.That is, X point
Voltage level is equal to 12 volts.Therefore, the voltage level of one end of I1 can drive I1 to export 3.3 volts
output voltage level。
Optionally, in addition to controller, upper MOSFET, lower MOSFET and inductance, DC-to-DC
Converter100 can also include other electronic components.
Referring to fig. 2, DC-to-DC converter also includes capacitor C1 and capacitor C2.One end of C1 and the source electrode coupling of MOS2
It closes.The other end of C1 is coupled with the other end of I1.One end of C2 is coupled with the output end P3 of IC1.The other end of C2 is coupled with P0.
For DC-to-DC converter100 shown in FIG. 1, when the upper MOSFET is turned on, the upper
The power of MOSFET consumption is bigger.Therefore, upper MOSFET is easy to happen failure.When event occurs for the upper MOSFET
When barrier, the practical output voltage level provided of DC-to-DC converter100 is likely to be greater than specified
voltage level.The load that the output end that above situation may cause DC-to-DC converter100 is connected is damaged
It is bad.
Referring to fig. 2, the specified voltage level of DC-to-DC converter is 3.3 volts.When event occurs for MOS1
When barrier, the practical output voltage level provided of DC-to-DC converter may be 8 volts.It may cause I1's
The chip (being not shown in Fig. 2) that the other end is connected is damaged.
A possibility that being damaged for the load that the output end of reduction DC-to-DC converter100 is connected, Fig. 3 pairs
The embodiment answered provides another DC-to-DC converter.Referring to Fig. 3, DC-to-DC converter300 is in Fig. 1
Shown in be extended on the basis of DC-to-DC converter100.DC-to-DC converter300's is specific
Implementation can refer to the corresponding embodiment of Fig. 1 or Fig. 2.It is different from DC-to-DC converter100, DC-to-DC
Converter300 contains protection Metal Oxide Semiconductor Field Effect Transistor (protecting MOSFET).It is described
Protecting MOSFET is for protecting the load of DC-to-DC converter300.In addition, the upper in Fig. 3
The drain electrode of MOSFET is coupled with the source electrode of the protecting MOSFET.The drain electrode of the protecting MOSFET and institute
State the first voltage level coupling.The controller contains third output end.The third output end with it is described
The grid of protecting MOSFET couples.For example, the controller can use the third output end to described
The opening and closing of protecting MOSFET are controlled.
The controller is used to detect whether the upper MOSFET breaks down by the control port.
When the controller detects that the upper MOSFET breaks down by the control port, the control
Device is used to close the protecting MOSFET by the third output end.
In above-mentioned technical proposal, the drain electrode coupling of the source electrode of the protecting MOSFET and the upper MOSFET
It closes.When the protecting MOSFET is closed, the value of the voltage level of the drain electrode of the upper MOSFET
It can be 0.The value of the voltage level of the source electrode of the upper MOSFET is can be with 0.The source of the upper MOSFET
Potential difference between pole and the drain electrode of the upper MOSFET can be 0.Therefore, even if the controller passes through described first
Output end opens the upper MOSFET, and the power of the upper MOSFET consumption can be equal to 0.The upper
MOSFET is not easy to be burned out.To which the protecting MOSFET protects upper MOSFET.In addition, institute
It states after protecting MOSFET is closed, the output power of DC-to-DC converter will be gradually reduced to 0.Therefore, on
The scheme of stating can protect the load of the DC-to-DC converter connection.
It should be noted that in above-mentioned technical proposal, be limited to the severity of the failure of the upper MOSFET with
And the controller closes the timely degree of the protecting MOSFET, the protecting MOSFET is to described
The effect that upper MOSFET is protected may be discrepant.For example, if the controller detects the upper
Slight failure has occurred in MOSFET, and the controller closes the protecting MOSFET in time, then described
Protecting MOSFET is more satisfactory to the upper MOSFET effect protected.If the controller
Detect that serious failure (such as irreversible damage) has occurred in the upper MOSFET, then the protecting
MOSFET may not be ideal to the upper MOSFET effect protected.In above situation, although described
Protecting MOSFET may not be to the upper MOSFET effect protected it is ideal, it is described
Protecting MOSFET still may be implemented to protect the load of the DC-to-DC converter connection.
Fig. 4 is a kind of schematic diagram of possible specific implementation of DC-to-DC converter300 shown in Fig. 3.
Specifically, DC-to-DC converter shown in Fig. 4 be on the basis of DC-to-DC converter shown in Fig. 2 into
Row extension obtains.The specific implementation of DC-to-DC converter shown in Fig. 4, can be corresponding with reference to Fig. 1 or Fig. 2
Embodiment.It is different from DC-to-DC converter shown in Fig. 2, DC-to-DC converter shown in Fig. 4 further includes
MOS3(protecting MOSFET).MOS3 is for protecting MOS1.The drain electrode of MOS1 is coupled with the source electrode of MOS3.
The voltage level of the drain electrode of MOS3 is equal to 12 volts.In addition, IC1 contains P4 (third output end).The grid of P4 and MOS3
Pole coupling, so that IC1 can control the opening and closing of MOS3 by P4.
IC1 is used to detect whether the MOS1 breaks down by P0.When IC1 detects that MOS1 breaks down by P0
When, IC1 is used to close MOS3 by P4.
Optionally, in DC to DC converter 300 shown in Fig. 3, the controller is detected by the control port
Whether the upper MOSFET, which breaks down, includes:
The controller determines the duty ratio (duty ratio) of dual MOSFET.The dual MOSFET includes described
The upper MOSFET and lower MOSFET.
When the duty ratio of the dual MOSFET is greater than threshold value, the controller determines the upper MOSFET hair
Raw failure, the threshold value are equal to or more than the quotient of the 2nd voltage level and the first voltage level.
For example, the control port is coupled with the source electrode of the upper MOSFET.It can wrap in the controller
Containing detection circuit, counting circuit and timer.The detection circuit is used to detect the source electrode of the upper MOSFET
The circuit of voltage level.The detection circuit, the counting circuit and timer are coupled with the control port.
Specifically, when the detection circuit detects the voltage level of source electrode etc. of the upper MOSFET
When the first voltage level, the controller determines that the upper MOSFET is in the open state.When the inspection
When slowdown monitoring circuit detects that the voltage level of the source electrode of the upper MOSFET is equal to 0 volt, the controller determines institute
Upper MOSFET is stated to be in close state.It is held assuming that the timer determines that the upper MOSFET is in the open state
The continuous time is t1.Assuming that the timer determines that the duration that the upper MOSFET is in close state is t2.It is this
In the case of, the counting circuit can calculate the duty ratio.For example, the duty ratio is equal to t1/ (t1+t2).
When the counting circuit determines that the duty ratio is greater than the threshold value, the controller can determine described
Upper MOSFET breaks down.In turn, the controller can close the protecting by the third output end
MOSFET。
For example, when the duty ratio of the dual MOSFET is equal to the 2nd voltage level and described first
When the quotient of voltage level, when the output voltage level of the DC-to-DC converter is equal to described the
Two voltage level.The 2nd voltage level is the specified voltage of the DC-to-DC converter
level.When the duty ratio of the dual MOSFET is greater than the threshold value, then show the DC-to-DC converter's
Output voltage level is greater than the 2nd voltage level.That is, the DC-to-DC converter
Output voltage level be greater than specified voltage level.In this case, the upper MOSFET may
Failure has occurred.
Optionally, the threshold value can be equal to or more than P.P=is (first described in the 2nd voltage level/
Voltage level) multiplied by Q.Q is greater than 1 and less than 2.Such as Q can be equal to 1.1,1.2,1.3,1.4 or 1.5.About
The value of threshold value can be arranged according to the experience of circuit engineering teacher.
Optionally, in DC to DC converter 300 shown in Fig. 3, the controller determines the duty of dual MOSFET
Than including:
The controller determines at least one duty cycle of the dual MOSFET.
The controller determines the dual MOSFET in the duty ratio of at least one duty cycle.
For example, the controller can control the upper MOSFET by first output end.The control
Device processed can control the lower MOSFET by the second output terminal.The controller can be according to first output
The control signal at end and the control signal of the second output terminal determine at least one described duty cycle.Hereafter with one
It is illustrated for duty cycle.For example, the controller, which first passes through first output end, opens the upper MOSFET.
The duration upper MOSFET in the open state is t3.Then, the controller passes through first output end
Close the upper MOSFET.Then, the controller opens the lower MOSFET by the second output terminal.Institute
Stating the lower MOSFET duration in the open state is t4.Then, the controller is closed by the second output terminal
Close the lower MOSFET.It is the upper at the beginning of the duty cycle of the dual MOSFET in the example above
MOSFET is turned on, and the end time of the duty cycle of the dual MOSFET is that the lower MOSFET is closed.It is described
The duration of the duty cycle of dual MOSFET is equal to t3+t4.
Optionally, in DC to DC converter 300 shown in Fig. 3, at least one described duty cycle is continuous more
A duty cycle.Duty ratio of the dual MOSFET at least one duty cycle includes that the dual MOSFET exists
The duty ratio of each duty cycle in continuous multiple duty cycles.
When the duty ratio of the dual MOSFET is greater than threshold value, the controller determines the upper MOSFET hair
Giving birth to failure includes:
When the duty ratio of each duty cycle in continuous multiple duty cycles is greater than the threshold value, the control
Device processed determines that the upper MOSFET breaks down.
For example, continuous multiple duty cycles can be two duty cycles, be also possible to for three work weeks
Phase.The duty ratio of each duty cycle is greater than the threshold value in continuous multiple duty cycles, then the upper
A possibility that MOSFET breaks down is bigger.Above scheme excludes to lead to the upper due to accidentalia
MOSFET is only a possibility that the duty ratio of a duty cycle is greater than the threshold value.Therefore, above-mentioned technical proposal is to described
The fault detection of upper MOSFET is more accurate.
Optionally, in DC to DC converter 300 shown in Fig. 3, at least one described duty cycle is a job
Period；
When the duty ratio of the dual MOSFET is greater than threshold value, the controller determines the upper MOSFET hair
Giving birth to failure includes:
When the duty ratio of one duty cycle is equal to 1, the controller determines that the upper MOSFET occurs
Failure.
For example, it when the controller determines that the duty ratio of one duty cycle is equal to 1 specific implementation, can wrap
It includes:
It include detection circuit in the controller.Described in the detection circuit can be detected via the control port
The voltage level of the source electrode of upper MOSFET.When the detection circuit detects the source electrode of the upper MOSFET
Voltage level be equal to the first voltage level within one duty cycle, then the controller determines
The duty ratio of one duty cycle is equal to 1.That is, within first duty cycle, the upper MOSFET
It is not turned off, the upper MOSFET is in the open state always.In this case, the upper MOSFET has occurred
More serious failure.
In above-mentioned technical proposal, the controller can be according only to described in the duty ratio of a duty cycle i.e. determination
Upper MOSFET breaks down.The controller can quickly detect the upper MOSFET and break down.
The embodiment of the present application provides a kind of circuit.The circuit includes multiple DC-to-DC as shown in Figure 3
converter.The multiple DC-to-DC converter is in parallel.Specifically, the multiple DC-to-DC
In converter, each DC-to-DC converter includes one for providing the inductance of the 2nd voltage level.Cause
This, the multiple DC-to-DC converter includes multiple inductance.The multiple inductance is in parallel.The multiple inductance
Other end coupling.
In above-mentioned technical proposal, the circuit includes multiple DC-to-DC converter.If a DC-to-DC
Converter breaks down, and the circuit still can provide the 2nd voltage level.For example, when one
Control when upper MOSFET breaks down in DC-to-DC converter, in one DC-to-DC converter
Device detects that the upper MOSFET breaks down, and closes one DC-to-DC by third output end
Protecting MOSFET in converter.In this case, the inductance of one DC-to-DC converter
The other end can not provide the 2nd voltage level.Other DC-to-DC converter in the circuit are not sent out
Raw failure, the circuit still can provide the 2nd voltage level.Above-mentioned technical proposal helps to provide the electricity
The reliability on road.
Fig. 5 is a kind of structural schematic diagram of possible implementation of the circuit.In implementation shown in fig. 5, packet
Include 2 DC-to-DC converter.Each DC-to-DC converter can be DC-to-DC shown in Fig. 4
converter.Referring to Fig. 5,2 DC-to-DC converter are in parallel.Specifically, 2 DC-to-DC
Each DC-to-DC converter includes the inductance for being used to provide the described the 2nd voltage level in converter.
2 DC-to-DC converter include 2 inductance.The other end of 2 inductance couples.
The embodiment of the present application provides a kind of converter (converter).The converter includes multiple such as Fig. 3 institute
The DC-to-DC converter shown.The converter only includes a protecting MOSFET.That is, described
Multiple DC-to-DC converter share the same protecting MOSFET.Specifically, described same
Protecting MOSFET is used to protect each upper MOSFET in the multiple DC-to-DC converter.Work as institute
When stating the upper MOSFET in a DC-to-DC converter in multiple DC-to-DC converter and breaking down,
The same protectng MOSFET is closed.Therefore, the upper in one DC-to-DC converter
The voltage level of the drain electrode of MOSFET is equal to 0 volt.Upper in one DC-to-DC converter
MOSFET is protected.Certainly, in this case, in the multiple DC-to-DC converter there is no failure
DC-to-DC converter also can not work normally.Because there is no in the DC-to-DC converter of failure
The voltage level of the drain electrode of upper MOSFET is equal to 0 volt.The effect of above-mentioned technical proposal is the multiple DC-
To-DC converter shares the same protecting MOSFET.Reduce the converter cost.
Fig. 6 is a kind of structural schematic diagram of possible implementation of the converter.Implementation shown in fig. 6
In, including 2 DC-to-DC converter.Each DC-to-DC converter can be DC-to-DC shown in Fig. 4
converter.Referring to Fig. 6,2 DC-to-DC converter share the same protecting MOSFET Q.Work as position
Controller 1 in the DC-to-DC converter in left side detects the upper in the DC-to-DC converter
MOSFET breaks down, and the controller 1 can be closed the Q by output end P1.Similarly, as the DC- for being located at right side
Controller 2 in to-DC converter detects that the upper MOSFET in the DC-to-DC converter breaks down,
The controller 2 can be closed the Q by output end P2.
Fig. 7 is a kind of schematic diagram of the method for MOSFET error protection provided by the embodiments of the present application.
The method is executed by DC to DC converter, and the DC to DC converter includes controller, top gold
Belong to oxide semiconductor field effect transistor upper MOSFET, lower metal oxide semiconductor field effect transistor lower
MOSFET, protecting MOSFET and inductance.The grid of first output end of the controller and the upper MOSFET
Pole coupling.The second output terminal of the controller is coupled with the grid of the lower MOSFET.The third of the controller is defeated
Outlet is coupled with the grid of the protecting MOSFET.The source electrode and ground of the lower MOSFET
Potential coupling.The drain electrode of the lower MOSFET, the source electrode of the upper MOSFET, the inductance one end with
The control port of the controller couples.The drain electrode of the upper MOSFET and the source electrode of the protecting MOSFET
Coupling.The drain electrode of the protecting MOSFET and the first voltage level coupling.The other end of the inductance is used for
2nd voltage level is provided.The value of the 2nd vol tage level is less than the first voltage level's
Value.The controller controls the upper MOSFET using first output end for passing through, and by described in utilization
Second output terminal controls the lower MOSFET, and the inductance is driven to provide the 2nd voltage level.
Referring to Fig. 7, the method includes S701 and S702.
S701, the controller detect whether the upper MOSFET breaks down by the control port.
S702, when the controller detects that the upper MOSFET breaks down by the control port, institute
It states controller and the protecting MOSFET is closed by the third output end.
For example, the controller can be ASIC, FPGA, CPLD or CPU.
The mentioned DC to DC converter of method shown in Fig. 7 specifically can be the corresponding embodiment of Fig. 3 and provide
DC-to-DC converter.Technical term involved in method shown in Fig. 7 and specific implementation can refer to
The description of the corresponding embodiment of Fig. 3 or the description of the corresponding embodiment of Fig. 4, details are not described herein again.
Optionally, in method shown in Fig. 7, S701 may include:
The controller determines the duty ratio of dual MOSFET, and the dual MOSFET includes the upper MOSFET
With the lower MOSFET；
When the duty ratio of the dual MOSFET is greater than threshold value, the controller determines the upper MOSFET hair
Raw failure, the threshold value are equal to or more than the quotient of the 2nd voltage level and the first voltage level.
Optionally, in method shown in Fig. 7, the controller determines that the duty ratio of dual MOSFET includes:
The controller determines at least one duty cycle of the dual MOSFET；
The controller determines the dual MOSFET in the duty ratio of at least one duty cycle.
Optionally, in method shown in Fig. 7, at least one described duty cycle is continuous multiple duty cycles, described
Duty ratio of the dual MOSFET at least one duty cycle includes the dual MOSFET described continuous multiple
The duty ratio of each duty cycle in duty cycle；
When the duty ratio of the dual MOSFET is greater than threshold value, the controller determines the upper MOSFET hair
Giving birth to failure includes:
When the duty ratio of each duty cycle in continuous multiple duty cycles is greater than the threshold value, the control
Device processed determines that the upper MOSFET breaks down.
Optionally, in method shown in Fig. 7, at least one described duty cycle is a duty cycle；
When the duty ratio of the dual MOSFET is greater than threshold value, the controller determines the upper MOSFET hair
Giving birth to failure includes:
When the duty ratio of one duty cycle is equal to 1, the controller determines that the upper MOSFET occurs
Failure.
Each functional unit in each embodiment of the application can integrate in a processor, be also possible to each unit
It physically exists alone, it can also be with two or more circuit integrations in a circuit.Above-mentioned each functional unit can both be adopted
With formal implementation of hardware, can also realize in the form of software functional units.
It is apparent to those skilled in the art that for convenience and simplicity of description, the system of foregoing description,
The specific work process of device and unit, can refer to corresponding processes in the foregoing method embodiment, and details are not described herein.
In several embodiments provided herein, it should be understood that disclosed system, device and method can be with
It realizes by another way.For example, the apparatus embodiments described above are merely exemplary.For example, the unit
It divides, only a kind of logical function partition, there may be another division manner in actual implementation.Such as multiple units or components
It can be combined or can be integrated into another system, or some features can be ignored or not executed.Another point, it is shown or
The mutual coupling, direct-coupling or communication connection discussed can be through some interfaces, the indirect coupling of device or unit
It closes or communicates to connect, can be electrical property, mechanical or other forms.
The unit as illustrated by the separation member may or may not be physically separated.It is aobvious as unit
The component shown may or may not be physical unit.Can be in one place, or may be distributed over multiple
In network unit.It can select some or all of unit therein according to the actual needs to realize the mesh of this embodiment scheme
's.
If the integrated unit is realized in the form of combination of hardware software and sells or use as independent product
When, the software can store in a computer readable storage medium.Based on this understanding, technical side of the invention
Case the part that contributes to existing technology technical characteristic can be embodied in the form of software products, which produces
Product are stored in a storage medium, including some instructions are used so that a computer equipment (can be personal computer, take
Business device or the network equipment etc.) execute some or all of each embodiment the method for present invention step.And storage above-mentioned
Medium can be that USB flash disk, mobile hard disk, read-only memory (referred to as: ROM, English: Read-Only Memory), arbitrary access deposits
Reservoir (referred to as: RAM, English: Random Access Memory), magnetic or disk.
The various pieces of this specification are all made of progressive mode and are described, same and similar portion between each embodiment
Dividing may refer to each other, and what each embodiment introduced is and other embodiments difference.Especially for device and it is
For embodiment of uniting, since it is substantially similar to the method embodiment, so being described relatively simple, related place is referring to method reality
Apply the explanation of example part.
It should be understood that the size of the serial number of above-mentioned each method is not meant to execute suitable in the various embodiments of the application
Sequence it is successive, the execution of each method sequence should be determined by its function and internal logic, the implementation without coping with the embodiment of the present application
Process constitutes any restriction.
Those of ordinary skill in the art may be aware that dress described in conjunction with the examples disclosed in the embodiments of the present disclosure
It sets or method, can be realized with electronic hardware.Alternatively, can be realized with the combination of electronic hardware and computer software.For
The interchangeability for clearly demonstrating hardware and software, in the above description generally describes each example according to function
Composition and step.These functions are implemented in hardware or software actually, depending on technical solution specific application and
Design constraint.Professional technician can realize described function using distinct methods to each specific application
Energy.
Finally, it should be understood that the foregoing is merely the preferred embodiment of technical scheme,.Obviously, originally
Field technical staff can carry out various modification and variations to the application.
Claims (8)
1. a kind of DC to DC converter, which is characterized in that the DC to DC converter includes controller, upper metal
Oxide semiconductor field effect transistor MOSFET, lower part MOSFET, protection MOSFET and inductance；
First output end of the controller is coupled with the grid of the top MOSFET；
The second output terminal of the controller is coupled with the grid of the lower part MOSFET；
The third output end of the controller is coupled with the grid of the protection MOSFET；
The source electrode of the lower part MOSFET is coupled with earthing potential；
The drain electrode of the lower part MOSFET, the control of the source electrode of the top MOSFET, one end of the inductance and the controller
Port coupling processed；
The drain electrode of the top MOSFET is coupled with the source electrode of the protection MOSFET；
The drain electrode and the coupling of first voltage level of the protection MOSFET；
The other end of the inductance is less than the first voltage for providing second voltage level, the value of the second voltage level
The value of level；
The controller is used for by controlling the top MOSFET using first output end, and by utilizing described the
Two output ends control the lower part MOSFET, and the inductance is driven to provide the second voltage level；
The controller is used to detect whether the top MOSFET breaks down by the control port；
When the controller detects that the top MOSFET breaks down by the control port, the controller is used for
The protection MOSFET is closed by the third output end；
Whether the controller is detected the top MOSFET and is broken down by the control port
The controller determines the duty ratio of double MOSFET, and double MOSFET include the top MOSFET and the lower part
MOSFET；
When the duty ratio of double MOSFET is greater than threshold value, the controller determines that the top MOSFET breaks down, institute
State the quotient that threshold value is equal to or more than the second voltage level and the first voltage level.
2. DC to DC converter according to claim 1, which is characterized in that the controller determines double MOSFET's
Duty ratio includes:
The controller determines at least one duty cycle of double MOSFET；
The controller determines double MOSFET in the duty ratio of at least one duty cycle.
3. DC to DC converter according to claim 2, which is characterized in that at least one described duty cycle is to connect
Continuous multiple duty cycles, duty ratio of the double MOSFET at least one duty cycle include that double MOSFET exist
The duty ratio of each duty cycle in continuous multiple duty cycles；
When the duty ratio of double MOSFET is greater than threshold value, the controller determines that the top MOSFET breaks down packet
It includes:
When the duty ratio of each duty cycle in continuous multiple duty cycles is greater than the threshold value, the controller
Determine that the top MOSFET breaks down.
4. DC to DC converter according to claim 2, which is characterized in that at least one described duty cycle is one
A duty cycle；
When the duty ratio of double MOSFET is greater than threshold value, the controller determines that the top MOSFET breaks down packet
It includes:
When the duty ratio of one duty cycle is equal to 1, the controller determines that the top MOSFET breaks down.
5. a kind of method of Metal Oxide Semiconductor Field Effect Transistor MOSFET error protection, which is characterized in that the side
Method is executed by DC to DC converter, and the DC to DC converter includes controller, top MOSFET, lower part
MOSFET, protection MOSFET and inductance；
First output end of the controller is coupled with the grid of the top MOSFET；
The second output terminal of the controller is coupled with the grid of the lower part MOSFET；
The third output end of the controller is coupled with the grid of the protection MOSFET；
The source electrode of the lower part MOSFET is coupled with earthing potential；
The drain electrode of the lower part MOSFET, the control of the source electrode of the top MOSFET, one end of the inductance and the controller
Port coupling processed；
The drain electrode of the top MOSFET is coupled with the source electrode of the protection MOSFET；
The drain electrode and the coupling of first voltage level of the protection MOSFET；
The other end of the inductance is less than the first voltage for providing second voltage level, the value of the second voltage level
The value of level；
The controller is used for by controlling the top MOSFET using first output end, and by utilizing described the
Two output ends control the lower part MOSFET, and the inductance is driven to provide the second voltage level；
The described method includes:
The controller detects whether the top MOSFET breaks down by the control port；
When the controller detects that the top MOSFET breaks down by the control port, the controller passes through
The third output end closes the protection MOSFET；
Whether the controller is detected the top MOSFET and is broken down by the control port
The controller determines the duty ratio of double MOSFET, and double MOSFET include the top MOSFET and the lower part
MOSFET；
When the duty ratio of double MOSFET is greater than threshold value, the controller determines that the top MOSFET breaks down, institute
State the quotient that threshold value is equal to or more than the second voltage level and the first voltage level.
6. according to the method described in claim 5, it is characterized in that, the duty ratio of the determining double MOSFET of the controller includes:
The controller determines at least one duty cycle of double MOSFET；
The controller determines double MOSFET in the duty ratio of at least one duty cycle.
7. according to the method described in claim 6, it is characterized in that, at least one described duty cycle is continuous multiple work
Period, duty ratio of the double MOSFET at least one duty cycle include double MOSFET described continuous more
The duty ratio of each duty cycle in a duty cycle；
When the duty ratio of double MOSFET is greater than threshold value, the controller determines that the top MOSFET breaks down packet
It includes:
When the duty ratio of each duty cycle in continuous multiple duty cycles is greater than the threshold value, the controller
Determine that the top MOSFET breaks down.
8. according to the method described in claim 6, it is characterized in that, at least one described duty cycle is a duty cycle；
When the duty ratio of double MOSFET is greater than threshold value, the controller determines that the top MOSFET breaks down packet
It includes:
When the duty ratio of one duty cycle is equal to 1, the controller determines that the top MOSFET breaks down.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611116235.2A CN106533164B (en) | 2016-12-07 | 2016-12-07 | DC to DC converter and fault protecting method |
| PCT/CN2017/114821 WO2018103664A1 (en) | 2016-12-07 | 2017-12-06 | Direct current-to-direct current converter and fault protection method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611116235.2A CN106533164B (en) | 2016-12-07 | 2016-12-07 | DC to DC converter and fault protecting method |
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| CN106533164A CN106533164A (en) | 2017-03-22 |
| CN106533164B true CN106533164B (en) | 2019-04-12 |
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| CN201611116235.2A Active CN106533164B (en) | 2016-12-07 | 2016-12-07 | DC to DC converter and fault protecting method |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6204648B1 (en) * | 1995-08-11 | 2001-03-20 | Fujitsu Limited | DC-to-DC converter capable of preventing overvoltage |
| CN1388618A (en) * | 2001-05-24 | 2003-01-01 | 台达电子工业股份有限公司 | Output overvoltage protector for stepdown converter |
| CN102160271A (en) * | 2008-09-22 | 2011-08-17 | 富士通株式会社 | Control method for power control circuit, power supply unit, power supply system, and power controller control method |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8674670B2 (en) * | 2006-11-28 | 2014-03-18 | International Rectifier Corporation | DC/DC converter with depletion-mode III-nitride switches |
| US9035625B2 (en) * | 2009-12-23 | 2015-05-19 | R2 Semiconductor | Common cascode routing bus for high-efficiency DC-to-DC conversion |
| EP2672617B1 (en) * | 2012-06-07 | 2018-08-22 | Nxp B.V. | A buck converter with reverse current protection, and a photovoltaic system |
| CN203261080U (en) * | 2013-05-15 | 2013-10-30 | 立锜科技股份有限公司 | Bi-directional switching type power supply device and control circuit thereof |
| CN203434864U (en) * | 2013-08-12 | 2014-02-12 | 立锜科技股份有限公司 | Step-down switching type power supply unit |
| US10128749B2 (en) * | 2014-05-12 | 2018-11-13 | Texas Instruments Incorporated | Method and circuitry for sensing and controlling a current |
| CN106533164B (en) * | 2016-12-07 | 2019-04-12 | 华为技术有限公司 | DC to DC converter and fault protecting method |
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2016
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6204648B1 (en) * | 1995-08-11 | 2001-03-20 | Fujitsu Limited | DC-to-DC converter capable of preventing overvoltage |
| CN1388618A (en) * | 2001-05-24 | 2003-01-01 | 台达电子工业股份有限公司 | Output overvoltage protector for stepdown converter |
| CN102160271A (en) * | 2008-09-22 | 2011-08-17 | 富士通株式会社 | Control method for power control circuit, power supply unit, power supply system, and power controller control method |
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| WO2018103664A1 (en) | 2018-06-14 |
| CN106533164A (en) | 2017-03-22 |
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